CN202255734U - Pressure sensitive core - Google Patents
Pressure sensitive core Download PDFInfo
- Publication number
- CN202255734U CN202255734U CN2011202993947U CN201120299394U CN202255734U CN 202255734 U CN202255734 U CN 202255734U CN 2011202993947 U CN2011202993947 U CN 2011202993947U CN 201120299394 U CN201120299394 U CN 201120299394U CN 202255734 U CN202255734 U CN 202255734U
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- China
- Prior art keywords
- strain
- core body
- diaphragm
- sensor core
- body according
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Abstract
The utility model discloses a pressure sensitive core, which belongs to the field of film strain type pressure sensors and aims at resolving the problem that an existing pressure sensor cannot accurately and easily test pressure value of the temperature environment higher than 150 DEG C or lower than -55 DEG C, and is not high in measurement accuracy and long-time reliability. The pressure sensitive core is provided with a clamped flat film which comprises a maximum compression strain area, a maximum stretching strain area and a non-strain area. Two strain resistors are disposed respectively in the maximum compression strain area and the maximum stretching strain area. The four strain resistors form a Wheastone bridge strain circuit. A sensitivity temperature compensation platinum resistor and a lead conductive hole are disposed in the non-strain area. The pressure sensitive core is high in measurement accuracy and reliability, with measurement accuracy reaching level 0.2, and is capable of measuring pressure in a long-time and high-accuracy mode within the temperature range of -175 DEG C of liquid nitrogen temperature.
Description
Technical field
The utility model relates to the sensitive core body of thin film strain formula pressure transducer, high precision, high reliability pressure survey sensitive core body under the particularly wide warm area.
Background technology
Silicon piezoresistance type pressure sensor is owing to reasons such as temperature coefficient are big, oil-filled; Be difficult to accurately test and be higher than 150 ℃ or be lower than-55 ℃ of force value under the temperature environment; Strain-type film sensitive core body is adapted to various rugged surroundings downforce and measures owing to adopt the sputter mode on the stainless steel background, to prepare, and can test liquid nitrogen temperature～175 ℃ temperature range internal pressure value on the principle; But owing to reasons such as structure, material, technological designs, measuring accuracy and long-term reliability are not high.
Summary of the invention
Be difficult to accurately test and be higher than 150 ℃ or be lower than-55 ℃ of force value under the temperature environment in order to overcome existing pressure transducer; Or measuring accuracy and the not high deficiency of long-term reliability; The utility model aims to provide a kind of sensitive core body of pressure, this core body can be under ℃ temperature of liquid nitrogen temperature～175 high precision, gaging pressure reliably and with long-term.
To achieve these goals; The technical scheme that the utility model adopted is: said presser sensor core body has solid flat diaphragm; This flat diaphragm comprises maximum compressive strain district, maximum stretching strain district and non-strain regions, respectively establishes two strain resistors in said maximum compressive strain district, maximum stretching strain district, and these four strain resistors are formed Hui Sideng full-bridge strain circuit; Its design feature is that said non-strain regions is provided with sensitivity temperature compensation RTD and lead-in wire conductive hole.
As further improvement to the utility model:
Said non-strain regions is provided with the zero compensation resistor network that is connected with four strain resistors.Wherein, said zero compensation resistor network is the network that a plurality of film small resistors that are connected to strain resistor one end are combined into, and each small resistor seals in strain resistor, through the resistance Combination Optimized being chosen compensator bridge zero point.Said four strain resistors are the identical alloy firm grizzly bar resistance of resistance.
Said flat diaphragm bottom has at least one stress relief grooves.Said flat diaphragm is preferably 17-4PH type flat diaphragm.
Said flat diaphragm upper surface is provided with insulation course, and the insulation course top is provided with resistive film, and the resistive film top is provided with diaphragm, and the diaphragm top is provided with RTD and lead-in wire conductive layer.Wherein, the material of the said insulation course supreme Ta that serves as reasons down
2O
5, SiO
2, Ta
2O
5, SiO
2Layer, the thickness proportion of four kinds of materials is about 1:1:1:6.
Said zero compensation resistor network adopts modification NiCr film.Said resistive film adopts modification NiCr film, and said diaphragm is SiO
2Diaphragm.
Said sensitivity temperature compensating resistance all adopts ion beam sputtering Pt film with the lead-in wire conductive layer.
By said structure; The Study on Preparation and the layout design of the comprehensive diaphragm pressure sensitive core body of the utility model; Choose 17-4PH material periphery fixed flat diaphragm on the structure, flat diaphragm can adopt welding manner to melt admittedly on the test pressure base, near welding region design stress release groove; Adopt accurate lapping and buffing machine that processing is ground, thrown on the flat diaphragm surface on the technology, after chemical cleaning and high-energy particle bombardment clean, adopt the ion beam sputtering mode on flat diaphragm, to deposit function film, at first that deposition is Ta from the bottom to top
2O
5/ SiO
2/ Ta
2O
5/ SiO
2Insulation course, deposition modified again NiCr resistance alloys film is etched into strain resistor and compensating resistance network through photoetching process, again area deposition SiO beyond the lead-in wire conductive hole
2Diaphragm combines photoetching process at last, at non-strain regions deposition Pt compensating resistance and lead-in wire conductive hole.
The principle of work of the utility model is: the periphery fixed flat diaphragm melts admittedly on the test pressure base through welding manner and is fixed on test point; Flat diaphragm is experienced test pressure and is produced certain deformation; Deposition sheet resistance is above that followed diaphragm deformation; Thereby resistance changes because the resistance that is distributed in maximum compressive strain district and maximum stretching strain district can produce opposite variation, connect into export behind the Hui Sideng full-bridge strain circuit one with by the linear basically electric signal of measuring pressure.
Compared with prior art, the beneficial effect of the utility model is:
(1) the flat diaphragm structural design has adopted stress relief grooves, and external carbuncle is to the influence of film performance in the time of can reducing welding, installation.
(2) insulation course adopts the ion beam sputtering mode to deposit, and adhesion of film power is strong, and the Ta that adopts
2O
5/ SiO
2/ Ta
2O
5/ SiO
2Insulation mode can effectively improve insulation and withstand voltage properties, guarantees that chip long-term work time insulation in ℃ temperature range of liquid nitrogen～175 is reliable.
(3) strain resistor and zero compensation resistance all adopt modification NiCr film, and the resistance long-time stability are good, and the same technology of zero compensation resistance and strain resistor, same material can not brought added influence to circuit.
(4) sensitivity temperature compensating resistance all adopts the Pt film preparation with the lead-in wire conductive layer; Both simplified technology; And the Pt film performance is excellent, and its good temperature performance effectively Sensitivity Temperature of compensatory pressure sensitive chip floats, as lead-in wire conductive layer good welding performance; Long-time stability under high low temperature have guaranteed the stability of resistance value, also guarantee not to insulate because of migration or other influences background.
(5) design of all compensating resistances and outer lead conductive layer does not receive diaphragm because of bearing the influence of pressure deformation in non-lead district, can improve the functional reliability of chip under rugged surroundings.
What (6) zero compensation adopted is the network that a series of film small resistors that are connected to the strain resistor end are combined into; Through the resistance Combination Optimized is chosen; Can compensator bridge zero point to the coincidence circuit requirement, need not to carry out again the laser correction, avoid the influence of laser to resistive film, dielectric film; The processing quality controllability is good, and combined process can guarantee effectively that the temperature at zero point of sheet resistance bridge floats under the wide warm area and satisfy high-precision requirement.
In sum; Because a series of designs of combined process; Sensitive core body insulating property, electrical property all can be operated under ℃ temperature of liquid nitrogen～175 reliably and with long-term, owing to designed film zero compensation resistance and degrees of sensitivity temperature drift compensation resistance, have improved the core body measuring accuracy.
Below in conjunction with accompanying drawing and embodiment the utility model is done further to set forth.
Description of drawings
Fig. 1 is a presser sensor core body space of a whole page synoptic diagram;
Fig. 2 is a pressure flat diaphragm upper film level synoptic diagram.
Fig. 3 is a Hui Sideng full-bridge strain circuit synoptic diagram.
In the drawings:
The 1-stress relief grooves; The 2-flat diaphragm; The maximum compressive strain of 3-district;
The maximum stretching strain of 4-district; The non-strain regions of 5-; 6, R1, R2, R3, R4-strain resistor;
7-zero compensation resistor network; 8-sensitivity temperature compensation RTD;
The 9-conductive hole that goes between; The 10-insulation course; The 11-resistive film;
The 12-diaphragm; 13-RTD and lead-in wire conductive layer.
Embodiment
A kind of presser sensor core body; As shown in Figure 2; The 17-4PH periphery fixed flat diaphragm 2 that comprises machining band stress relief grooves 1; Adopt accurate lapping and buffing machine that processing is ground, thrown on flat diaphragm 2 surfaces, after chemical cleaning and high-energy particle bombardment clean, adopt the ion beam sputtering mode on flat diaphragm 2, to deposit Ta
2O
5/ SiO
2/ Ta
2O
5/ SiO
2Insulation course 10 and resistive film 11 are etched into strain resistor 6 and compensating resistance network 7 through photoetching process, in conjunction with photoetching process area deposition SiO beyond lead-in wire conductive hole 9
2 Diaphragm 12, deposition sensitivity temperature compensation RTD 8 and lead-in wire conductive hole 9 on non-strain regions 5.
As shown in Figure 1, on layout design, strain resistor R1, R3 are in the compressive strain district of flat diaphragm; Strain resistor R2, R4 are in the stretching strain district of flat diaphragm; Connect into bridge diagram shown in Figure 3 through outer lead, when flat diaphragm was experienced pressure deformation, R1, R3 resistance increased; R2, R4 resistance reduce, bridge diagram output and the linear basically electric signal of pressure.
Compensating resistance network 7 is meant the small resistor that a series of resistances are different; Be distributed in non-strain regions 5; Each small resistor all seals in strain resistor 6 and can draw through lead-in wire conductive hole 9; Through test and calculating, choose the part that suitable compensating resistance seals in becomes bridge resistance R1, R2, R3, R4, outer lead is with lead-in wire conductive hole 9 to draw from the compensating resistance of choosing.So the bridge circuit after the compensation does not need to go here and there in addition external resistance compensation or laser correction brachium pontis.
The input end of electric bridge is serially connected with two RTDs, because temperature coefficient hinders temperature coefficient much larger than bridge, floats through the Sensitivity Temperature that under different temperatures, the dividing potential drop difference of bridge circuit is compensated bridge circuit.
The content that the foregoing description is illustrated is to be understood that to these embodiment and only is used to be illustrated more clearly in the utility model; And be not used in the restriction the utility model scope; After having read the utility model, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the utility model.
Claims (10)
1. presser sensor core body; Solid flat diaphragm (2) is arranged; This flat diaphragm (2) comprises maximum compressive strain district (3), maximum stretching strain district (4) and non-strain regions (5), and in said maximum compressive strain district (3), maximum stretching strain district (4) respectively establishes two strain resistors (6), these four strain resistors (6) are formed Hui Sideng full-bridge strain circuit; It is characterized in that said non-strain regions (5) is provided with sensitivity temperature compensation RTD (8) and lead-in wire conductive hole (9).
2. presser sensor core body according to claim 1 is characterized in that, said non-strain regions (5) is provided with the zero compensation resistor network (7) that is connected with four strain resistors (6).
3. presser sensor core body according to claim 1 is characterized in that, said flat diaphragm (2) bottom has at least one stress relief grooves (1).
4. presser sensor core body according to claim 1; It is characterized in that; Said flat diaphragm (2) upper surface is provided with insulation course (10); Insulation course (10) top is provided with resistive film (11), and resistive film (11) top is provided with diaphragm (12), and diaphragm (12) top is provided with RTD and lead-in wire conductive layer (13).
5. presser sensor core body according to claim 1 is characterized in that, said flat diaphragm (2) is a 17-4PH type flat diaphragm.
6. presser sensor core body according to claim 4 is characterized in that, supreme Ta under the serving as reasons of said insulation course (10)
2O
5, SiO
2, Ta
2O
5, SiO
2Layer.
7. presser sensor core body according to claim 4 is characterized in that, said resistive film (11) adopts modification NiCr film, and said diaphragm (12) is SiO
2Diaphragm.
8. presser sensor core body according to claim 1 is characterized in that, said sensitivity temperature compensating resistance (8) and lead-in wire conductive layer (9) all adopt ion beam sputtering Pt film.
9. presser sensor core body according to claim 1 is characterized in that, said four strain resistors are the identical alloy firm grizzly bar resistance of resistance.
10. presser sensor core body according to claim 2; It is characterized in that; Said zero compensation resistor network (7) is the network (7) that a plurality of film small resistors that are connected to strain resistor (6) one ends are combined into; Each small resistor seals in strain resistor (6), and said zero compensation resistor network (7) adopts modification NiCr film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202993947U CN202255734U (en) | 2011-08-17 | 2011-08-17 | Pressure sensitive core |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202993947U CN202255734U (en) | 2011-08-17 | 2011-08-17 | Pressure sensitive core |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202255734U true CN202255734U (en) | 2012-05-30 |
Family
ID=46116959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202993947U Expired - Lifetime CN202255734U (en) | 2011-08-17 | 2011-08-17 | Pressure sensitive core |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202255734U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104483048A (en) * | 2014-10-16 | 2015-04-01 | 大连睿科电子有限公司 | Insulated silicon resistance pressure sensor |
| CN105074407A (en) * | 2013-03-27 | 2015-11-18 | Vega格里沙贝两合公司 | Capacitive pressure-measuring cell for measuring the pressure of a medium adjoining the measuring cell |
| CN106201063A (en) * | 2016-06-27 | 2016-12-07 | 华为技术有限公司 | A kind of touch pressure detection device, display screen and touch-controlled electronic devices |
| CN107976272A (en) * | 2013-02-28 | 2018-05-01 | Mks 仪器公司 | The pressure sensor for monitoring and compensating with real time health |
| CN108240843A (en) * | 2016-12-26 | 2018-07-03 | 现代凯菲克株式会杜 | Sensor element |
-
2011
- 2011-08-17 CN CN2011202993947U patent/CN202255734U/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107976272A (en) * | 2013-02-28 | 2018-05-01 | Mks 仪器公司 | The pressure sensor for monitoring and compensating with real time health |
| CN107976272B (en) * | 2013-02-28 | 2020-03-24 | Mks 仪器公司 | Pressure sensor with real-time health monitoring and compensation |
| CN105074407A (en) * | 2013-03-27 | 2015-11-18 | Vega格里沙贝两合公司 | Capacitive pressure-measuring cell for measuring the pressure of a medium adjoining the measuring cell |
| CN105074407B (en) * | 2013-03-27 | 2018-07-06 | Vega格里沙贝两合公司 | For measuring the capacitive pressure measuring cell of surrounding medium pressure |
| CN104483048A (en) * | 2014-10-16 | 2015-04-01 | 大连睿科电子有限公司 | Insulated silicon resistance pressure sensor |
| CN106201063A (en) * | 2016-06-27 | 2016-12-07 | 华为技术有限公司 | A kind of touch pressure detection device, display screen and touch-controlled electronic devices |
| WO2018000874A1 (en) * | 2016-06-27 | 2018-01-04 | 华为技术有限公司 | Touch pressure detection apparatus, display screen and touch control electronic device |
| CN106201063B (en) * | 2016-06-27 | 2018-08-14 | 华为技术有限公司 | A kind of touch pressure detection device, display screen and touch-controlled electronic devices |
| CN108240843A (en) * | 2016-12-26 | 2018-07-03 | 现代凯菲克株式会杜 | Sensor element |
| CN108240843B (en) * | 2016-12-26 | 2021-07-27 | 现代凯菲克株式会杜 | Sensor element |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120530 |
|
| CX01 | Expiry of patent term |