CN202126319U - Sensor integrated with strain resistors and elastic element - Google Patents
Sensor integrated with strain resistors and elastic element Download PDFInfo
- Publication number
- CN202126319U CN202126319U CN2011201868812U CN201120186881U CN202126319U CN 202126319 U CN202126319 U CN 202126319U CN 2011201868812 U CN2011201868812 U CN 2011201868812U CN 201120186881 U CN201120186881 U CN 201120186881U CN 202126319 U CN202126319 U CN 202126319U
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- strain
- resistors
- elastic element
- elastic body
- resistance
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Abstract
The utility model relates to a sensor integrated with strain resistors and an elastic element, which is characterized in that an insulation layer is firstly sputtered on the elastic element (1), a strain resistor layer is secondly sputtered on the elastic element (1), and required resistors (R1, R2, R3 and R4) are formed by photoetching through photoetching technology. A group of symmetrical conduction bands (3 and 3a) are formed in vacuum coating mode to serve as leads. Four strain resistors (R1, R2, R3 and R4) form a wheatstone bridge. At last, an insulation layer (4) is evaporated to serve as a protective layer of resistors and conduction bands. Compared with sensors of other types, the sensor integrated with strain resistors and the elastic element has the advantages of being wide in measuring range and temperature using range, large in bridge resistance, high in accuracy and production efficiency, good in reliability, small in temperature coefficient and volume, suitable for large batch production and the like.
Description
Technical field
The utility model belongs to sensor technical field, relates to a kind of strain resistor and elastic body integral sensor.
Background technology
The sensor of dynamometry or measuring pressure has many kinds, like diffusion silicon pressure sensor, and strain-type thick film sensor, resistance strain type sensor, thin film sensor etc.Diffusion silicon pressure sensor is on a silicon chip, to adopt the process of diffusion, photoetching, corrosion to be made; Thick film sensor then is on a ceramic chip, to adopt thick film circuit technology to be made.Resistance strain type sensor is to adopt the method for adhering resistance strainometer to be made at the metallic elastic body.Because it is one that strain ga(u)ge adopts method of attaching and metallic elastic sports association; Adopt manual production mostly; Make production efficiency low; The bridge resistance, value can not be done greatly, finally makes this sensor have defectives such as precision is relatively poor, temperature range residence, temperature coefficient is big, volume is big, production efficiency is low.
The utility model content
The purpose of the utility model is exactly the intrinsic defective of resistance strain type sensor of pasting in the prior art in order to overcome, a kind of improved strain resistor of proposition and elastic body integral sensor.
To achieve these goals, the utility model has adopted following technical scheme:
A kind of strain resistor and elastic body integral sensor; It is characterized in that being provided with earlier on the elastic body layer insulating; Four strain resistors of one deck and one group of conduction band are set on the insulation course again; Conduction band connects to form resistance bridge with four strain resistors, and one deck insulating protective layer is set on strain resistor and conduction band at last.
Described strain resistor is earlier at insulation course sputter one deck resistive layer, utilizes photoetching technique photoetching resistance pattern, and the method for utilizing wet etching resistance is again corroded the strain resistor that formation needs and the resistance of design thereof to resistive layer.
Described one group of conduction band is by vacuum coating layer of metal conduction band layer; Utilize photoetching technique photoetching conduction band figure; Form the conduction band of one group of symmetry, it forms a resistance bridge with four strain resistors according to resistance bridge and difference characteristic and the stressed principle that changes of resistance.
Evaporate the insulating protective layer of one deck strain resistor and conduction band at last, form strain resistor and elastic body integral sensor.
On this integral sensor elastic body, can also be made into various signal conditioning circuits with sputtering technology, the form that sensor and modulate circuit are become one.
Strain resistor that the utility model provides and elastic body integral sensor, the sensor of other types compare have that range ability is wide, the bridge resistance, value can be done very big, precision is high, good reliability, serviceability temperature wide ranges, characteristics such as temperature coefficient is little, volume is little, the high suitable production in enormous quantities of production efficiency.
Description of drawings
Elastomeric cut-open view in the pressure transducer that Fig. 1 provides for the utility model;
Fig. 2 is the vertical view of Fig. 1;
The strain resistor that Fig. 3 provides for the utility model and the shape assumption diagram of elastic body integral sensor;
Fig. 4 is a resistance bridge;
The elastic body two sides that Fig. 5 proposes for the utility model is provided with the force cell of strain resistor.
Embodiment
Below in conjunction with accompanying drawing the utility model is elaborated.
Like Fig. 1, like Fig. 2; First sputter one layer insulating 2 on elastic body 1; Insulation course 2 can adopt silicon dioxide; Sputter one deck strain resistor layer utilizes photoetching technique photoetching resistance pattern again, and utilizing the method for wet etching resistive layer that resistive layer is corroded formation again needs strain resistor R1, R2, R3, R4 and resistance value.Vacuum coating one deck conduction band layer then; Utilize photoetching technique photoetching conduction band figure; Form one group of symmetrically arranged conduction band 3,3a; It according to resistance bridge and difference characteristic and the stressed principle composition resistance bridge (as shown in Figure 4) that changes of resistance, evaporates four strain resistor R1, R2, R3, R4 at last 4 pairs of strain resistors of one deck insulating protective layer and conduction band and protects, and forms strain resistor and elastic body integral sensor.
The shape of the various needs that the wire structures of the conduction band 3 among Fig. 2 can be arranged as required, this part belongs to the known technology field.Conduction band 3a plays horizontal connection effect.
The strain resistor that Fig. 3 provides for the utility model and the outside drawing of elastic body integral sensor, it is made up of elastic body 1 (comprising the integral type strain resistor that is provided with above it), lead-in wire 5, shell 6 and five core sockets 7.Wherein go between 5 with elastic body 1 in the corresponding connection of conduction band back, be connected with five core sockets 7 again.
Fig. 4 is a resistance bridge; Form a resistance bridge to four strain resistor R1, R2, R3, R4 that make with sputtering technology according to stressing conditions, receive the time spent of doing of power when electric bridge adds voltage and sensor, external force will cause the elastic body distortion; Produce strain; Resistance receives effect and the variation that has a resistance of strain, and wherein two resistances increase, and two resistances reduce in addition; According to electric bridge with the difference characteristic, will result from one at the in addition two ends of electric bridge and be proportional to the electric signal output that power (or pressure) changes.
The synoptic diagram of the another kind of force cell that Fig. 5 provides for the utility model, two strain resistors of sputter and corresponding conduction band 3 on each stress surface of elastic body 1 respectively, thus and form resistance bridge and form the elastic body that has the strain resistor integral type.
Claims (1)
1. strain resistor and elastic body integral sensor; It is characterized in that being provided with earlier on the elastic body (1) layer insulating (2); Four strain resistors (R1, R2, R3, R4) and one group of conduction band (3,3a) are set on the insulation course again; Conduction band (3,3a) connects to form resistance bridge with four strain resistors (R1, R2, R3, R4), and one deck insulating protective layer (4) is set on strain resistor and conduction band at last.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201868812U CN202126319U (en) | 2011-06-05 | 2011-06-05 | Sensor integrated with strain resistors and elastic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201868812U CN202126319U (en) | 2011-06-05 | 2011-06-05 | Sensor integrated with strain resistors and elastic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202126319U true CN202126319U (en) | 2012-01-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201868812U Expired - Fee Related CN202126319U (en) | 2011-06-05 | 2011-06-05 | Sensor integrated with strain resistors and elastic element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202126319U (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102879147A (en) * | 2012-09-24 | 2013-01-16 | 中联重科股份有限公司 | Measuring equipment, method, system and engineering machinery for measuring pressure in pipe |
| CN104272080A (en) * | 2012-05-22 | 2015-01-07 | 舍弗勒技术有限两合公司 | Strain gauge arrangement |
| CN104764554A (en) * | 2015-04-22 | 2015-07-08 | 中国工程物理研究院总体工程研究所 | Sputtering thin film type pore water pressure sensor |
| CN104931164A (en) * | 2014-03-20 | 2015-09-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flexible tension sensor |
| CN106197781A (en) * | 2016-08-23 | 2016-12-07 | 苏州理欧电子科技有限公司 | A kind of thin film vector sensor and a kind of deformation of thin membrane sensor |
| CN106225959A (en) * | 2016-07-04 | 2016-12-14 | 电子科技大学 | A kind of fexible film heat flow transducer and preparation method thereof |
| CN106248268A (en) * | 2016-08-31 | 2016-12-21 | 西安中星测控有限公司 | A kind of strain gauge transducer and preparation method thereof |
| CN106643463A (en) * | 2016-12-19 | 2017-05-10 | 华中科技大学 | Flexible full-bridge resistance strain sheet |
| CN107870054A (en) * | 2016-09-22 | 2018-04-03 | 罗伯特·博世有限公司 | Sense the pressure sensor and its manufacture method of fluid medium pressure |
| CN112880885A (en) * | 2021-01-11 | 2021-06-01 | 大连理工大学 | Full-flexible bidirectional tension sensor based on Wheatstone bridge principle |
| CN112903152A (en) * | 2021-02-02 | 2021-06-04 | 武汉纺织大学 | Strain pressure sensor wrapped with heteroplasmon |
| WO2024016722A1 (en) * | 2022-07-22 | 2024-01-25 | 魏杰 | Golf putter grip capable of displaying pre-shot stored power value |
-
2011
- 2011-06-05 CN CN2011201868812U patent/CN202126319U/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104272080A (en) * | 2012-05-22 | 2015-01-07 | 舍弗勒技术有限两合公司 | Strain gauge arrangement |
| CN102879147A (en) * | 2012-09-24 | 2013-01-16 | 中联重科股份有限公司 | Measuring equipment, method, system and engineering machinery for measuring pressure in pipe |
| CN104931164B (en) * | 2014-03-20 | 2018-03-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flexible tensile sensor |
| CN104931164A (en) * | 2014-03-20 | 2015-09-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flexible tension sensor |
| CN104764554A (en) * | 2015-04-22 | 2015-07-08 | 中国工程物理研究院总体工程研究所 | Sputtering thin film type pore water pressure sensor |
| CN106225959A (en) * | 2016-07-04 | 2016-12-14 | 电子科技大学 | A kind of fexible film heat flow transducer and preparation method thereof |
| CN106197781A (en) * | 2016-08-23 | 2016-12-07 | 苏州理欧电子科技有限公司 | A kind of thin film vector sensor and a kind of deformation of thin membrane sensor |
| CN106197781B (en) * | 2016-08-23 | 2020-03-27 | 苏州理欧电子科技有限公司 | Film vector sensor and film deformation sensor |
| CN106248268A (en) * | 2016-08-31 | 2016-12-21 | 西安中星测控有限公司 | A kind of strain gauge transducer and preparation method thereof |
| CN107870054A (en) * | 2016-09-22 | 2018-04-03 | 罗伯特·博世有限公司 | Sense the pressure sensor and its manufacture method of fluid medium pressure |
| US10914648B2 (en) | 2016-09-22 | 2021-02-09 | Robert Bosch Gmbh | Pressure sensor for detecting a pressure of a fluid medium in a measuring chamber |
| CN106643463A (en) * | 2016-12-19 | 2017-05-10 | 华中科技大学 | Flexible full-bridge resistance strain sheet |
| CN106643463B (en) * | 2016-12-19 | 2019-05-14 | 华中科技大学 | A kind of flexibility full-bridge type resistance strain gage |
| CN112880885A (en) * | 2021-01-11 | 2021-06-01 | 大连理工大学 | Full-flexible bidirectional tension sensor based on Wheatstone bridge principle |
| CN112903152A (en) * | 2021-02-02 | 2021-06-04 | 武汉纺织大学 | Strain pressure sensor wrapped with heteroplasmon |
| WO2024016722A1 (en) * | 2022-07-22 | 2024-01-25 | 魏杰 | Golf putter grip capable of displaying pre-shot stored power value |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120125 Termination date: 20160605 |