CN106225959A - A kind of fexible film heat flow transducer and preparation method thereof - Google Patents
A kind of fexible film heat flow transducer and preparation method thereof Download PDFInfo
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- CN106225959A CN106225959A CN201610545724.3A CN201610545724A CN106225959A CN 106225959 A CN106225959 A CN 106225959A CN 201610545724 A CN201610545724 A CN 201610545724A CN 106225959 A CN106225959 A CN 106225959A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
- G01K17/06—Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device
- G01K17/08—Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
- G01K17/006—Microcalorimeters, e.g. using silicon microstructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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Abstract
A kind of fexible film heat flow transducer, belongs to design and the preparing technical field of thin film sensor.Be followed successively by from bottom to top lower encapsulated layer, cold junction temperature sensitive thin film resistance to, flexible substrate, hot-side temperature sensitive thin film resistance to upper encapsulated layer, described flexible substrate arranges the electrode running through flexible substrate, for by cold junction temperature sensitive thin film resistance to and hot-side temperature sensitive thin film resistance to forming a Wheatstone bridge, cold junction temperature sensitive thin film resistance to and the resistance of resistance of hot-side temperature sensitive thin film resistance centering be 10 1000 Ω.In heat flow transducer of the present invention, the thickness of temperature sensitive thin film resistance is the least, has faster response speed, and response time is about 0.1s;Heat flow transducer of the present invention uses flexible substrate as the carrier of sensor, it is possible to achieve with fitting tightly of irregular part surface, and then realizes accurately measuring irregular part surface heat flow, substantially increases the scope of application of film heat flux sensor.
Description
Technical field
The invention belongs to design and the preparing technical field of thin film sensor, be specifically related to a kind of based on micromachined skill
Thin film sensor of art and preparation method thereof, more particularly, it relates to a kind of fexible film heat flow transducer and preparation method thereof.
Background technology
At present, in fields such as agricultural production, industrial engineering, scientific research and Aero-Space, often through to temperature
Measure and control to reach the control to heat transfer.But, along with the fast development of science and technology, only temperature is passed as heat
The unique information passed is nowhere near, and therefore, the theory and technology of heat-flow measurement increasingly comes into one's own, grinding of heat flow transducer
Study carefully and use the most extensive.
The conventional thermal flow sensor of current domestic use, all also exists when measuring that volume is big, response time slow and surveys
The problems such as accuracy of measurement difference.And film heat flux sensor is compared to conventional thermal flow sensor, having volume little, response is fast, does not destroys
Overall thermal flow distribution, can realize the advantages such as real-time, accurate measurement, and its R and D receive increasing attention.
Current film heat flux sensor, is at ceramic substrate surface sputtered film thermoelectric pile, then logical on thermoelectric pile
Cross sputtering or the thermal barrier coatings of different-thickness is prepared in evaporation.When hot-fluid is through measured object surface, according to Fourier law, in difference
Substrate surface under thickness thermal barrier coatings will produce temperature difference, and it is defeated that this temperature difference is converted to thermo-electromotive force signal via thermoelectric pile
Go out, thus realize the measurement to measured object surface heat flow.This heat flow transducer preparation technology is complex, and signal intensity
Relatively small, it is only applicable to the measurement of bigger hot-fluid, hard ceramic substrate is difficult to fit with irregular part surface simultaneously so that it is
Cannot realize irregular part surface heat flow is accurately measured.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, it is provided that a kind of simple in construction, response time
Hurry up, film heat flux sensor based on flexible substrate applied widely and preparation method thereof.
Technical scheme is as follows:
A kind of fexible film heat flow transducer, is followed successively by lower encapsulated layer 5, cold junction temperature sensitive thin film resistance pair from bottom to top
3, flexible substrate 1, hot-side temperature sensitive thin film resistance are to 2 and upper encapsulated layer 4, arrange and run through flexible substrate in described flexible substrate
Electrode, for by cold junction temperature sensitive thin film resistance to and hot-side temperature sensitive thin film resistance to forming favour stone electricity
Bridge, the input of Wheatstone bridge connects constant pressure source, described cold junction temperature sensitive thin film resistance to and hot-side temperature sensitive thin film
The resistance of the resistance of resistance centering is 10-1000 Ω;
When hot-fluid is through measured object surface, hot-side temperature sensitive thin film resistance pair and cold junction temperature sensitive thin film resistance pair
In the resistance of resistance can change, thus produce voltage at the outfan of Wheatstone bridge, it is achieved to measured object surface heat
The measurement of stream.
Further, described flexible substrate is the flexible high molecular material that thermal conductivity is low, specially polyimides, poly-inclined fluorine
Ethylene, PEN etc., thickness is 100-300 μm.
Further, described hot-side temperature sensitive thin film resistance to, the material of cold junction temperature sensitive thin film resistance pair be Pt,
Ni, Cu etc., its thickness is 1-2 μm.
Further, described upper encapsulated layer, lower encapsulated layer are polyimides, Parylene, polyethylene etc., and thickness is 50-100
μm, for packaging, to stop pollution and the destruction of outer bound pair heat flow transducer.
The preparation method of a kind of fexible film heat flow transducer, comprises the following steps:
Step 1, the surface of flexible substrate process: select the flexible high molecular material that thermal conductivity is low as substrate, first exist
Formed in flexible substrate and run through the electrode that substrate turns on the most up and down, then successively use acetone, ethanol and deionized water to flexibility
The surface of substrate is carried out, and flexible substrate then carries out ion beam bombardment cleaning, and cleaning is placed under nitrogen atmosphere and is dried;
Step 2, on flexible substrates sputtering hot-side temperature sensitive thin film resistance pair: the flexible substrate after step 1 is processed
One side use hot-side temperature sensitive thin film resistance to mask plate as mask, use the method for d.c. sputtering to deposit temperature thereon
The thin-film material of degree sensitive thin film resistance, obtains hot-side temperature sensitive thin film resistance pair, and wherein, the resistance of each resistance is 10-
1000Ω;
Step 3, on flexible substrates sputtering cold junction temperature sensitive thin film resistance pair: the flexible substrate after step 2 is processed
Another side use cold junction temperature sensitive thin film resistance to mask plate as mask, use the method for d.c. sputtering to deposit thereon
The thin-film material of temperature sensitive thin film resistance, obtains cold junction temperature sensitive thin film resistance pair, and wherein, the resistance of each resistance is
10-1000 Ω, described hot-side temperature sensitive thin film resistance to and cold junction temperature sensitive thin film resistance to the electricity by running through substrate
Pole forms Wheatstone bridge;
Step 4, welding electric conductors also connect power supply: use conductive silver paste step 3 is processed after flexible substrate on defeated
Entering termination electrode to be connected with power supply by wire, signal output part electrode is connected with voltameter by wire, and described power supply is constant voltage
Source, its voltage is output as 1-10V;
In step 5, employing, encapsulated layer and lower encapsulated layer are packaged: in accordance with the order from top to bottom by upper encapsulated layer, step
The structure, the lower encapsulated layer that obtain after rapid 4 process are stacked together, and then air locking i.e. can get flexible thin of the present invention
Film heat flow transducer.
Further, the electric lead described in step 4 is the Pt silk of 100 μm, Cu silk, Au silk etc..
Compared with prior art, it is an advantage of the current invention that:
1, the present invention uses thin film preparation process to sputter on flexible substrates to obtain temperature sensitive thin film resistance pair, due to temperature
The thickness of degree sensitive thin film resistance is the least, therefore has faster response speed, and response time is about 0.1s, operating temperature
Scope is-150~+200 DEG C;
2, the hot-side temperature sensitive thin film resistance in fexible film heat flow transducer of the present invention is to, cold junction temperature sensitive thin film
A Wheatstone bridge is constituted between resistance pair and power supply, when hot-fluid is through measured object surface, hot-side temperature sensitive thin film
Resistance pair can change with the resistance of cold junction temperature sensitive thin film resistance pair, thus produces voltage at outfan, it is achieved to quilt
Survey the measurement of thing surface heat flow.Relative to traditional thermoelectric pile formula heat flow transducer, the sensitivity of inventive sensor improves
An order of magnitude, about 1 μ V/ (W/m2);
3, fexible film heat flow transducer of the present invention uses flexible substrate as the carrier of sensor, it is possible to achieve with isomery
Fitting tightly of part surface, and then realize irregular part surface heat flow is accurately measured, substantially increase film heat flux sensor
The scope of application.
Accompanying drawing explanation
The structural representation of each layer of the fexible film heat flow transducer that Fig. 1 provides for the present invention;Wherein, 1 is flexible liner
The end, 2 is hot-side temperature sensitive thin film resistance pair, and 3 is cold junction temperature sensitive thin film resistance pair, and 4 is upper encapsulated layer, and 5 is lower encapsulation
Layer;
Fig. 2 is the top view of the fexible film heat flow transducer of embodiment;Wherein, 1 is flexible substrate, and 6 is the first temperature
Sensitive resistance, 7 is the second temperature-sensitive resistor, and 8 is the 3rd temperature-sensitive resistor, and 9 is the 4th temperature-sensitive resistor;10、11、
12,13 is four identical electrodes, and 10 is the first electrode, and 11 is the second electrode, and 12 is the 3rd electrode, and 13 is the 4th electrode;
The operation principle circuit diagram of the fexible film heat flow transducer that Fig. 3 provides for the present invention;Wherein, 6,7,8,9 is four
The temperature-sensitive resistor that individual resistance is identical, 6 is the first temperature-sensitive resistor, and 7 is the second temperature-sensitive resistor, and 8 is the 3rd temperature
Sensitive resistance, 9 is the 4th temperature-sensitive resistor;10,11,12,13 is four identical electrodes, and 10 is the first electrode, and 11 is
Two electrodes, 12 is the 3rd electrode, and 13 is the 4th electrode;11 and 13 is input terminal electrode, and 10 and 12 is output terminal electrode.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, technical scheme is described in detail in detail.
Embodiment
As shown in Figure 1 and Figure 2, a kind of embodiment of a kind of fexible film heat flow transducer provided for the present invention, including soft
Property substrate 1, sputtering sedimentation in flexible substrate 1 one side hot-side temperature sensitive thin film resistance to 2, sputtering sedimentation is in flexible substrate 1
The cold junction temperature sensitive thin film resistance of another side is to 3, for upper encapsulated layer 4 and the lower encapsulated layer 5 of encapsulation, wherein, described flexibility
The most two-sided four electrodes turned on of substrate it are provided through: the first electrode 10 on substrate 1, the second electrode 11, the 3rd electrode 12,
4th electrode 13, described hot-side temperature sensitive thin film resistance is that the first temperature is sensitive to two temperature sensitive thin film resistance in 2
Resistance the 6, second temperature-sensitive resistor 7, the two ends of the first temperature-sensitive resistor 6 connect the first electrode 10 and the second electrode 11, the
The two ends of two temperature-sensitive resistors 7 connect the 3rd electrode 12 and the 4th electrode 13, and described cold junction temperature sensitive thin film resistance is in 3
Two temperature sensitive thin film resistance be the 3rd temperature-sensitive resistor the 8, the 4th temperature-sensitive resistor 9, the 3rd temperature-sensitive resistor 8
Two ends connect the second electrode 11 and the 3rd electrode 12, the two ends of the 4th temperature-sensitive resistor 9 connect the first electrode 10 and the 4th
Electrode 13, is connected to a constant voltage source between input terminal electrode 11 and 13.
In the present embodiment, described flexible substrate 1 is the flexible substrate of about four penetrating electrode of band processed, material
Material is polyimides, and thickness is 100 μm.
In the present embodiment, described temperature sensitive thin film resistance 6,7,8,9 is Pt, and thickness is 1 μm.
In the present embodiment, described electrode 10,11,12,13 is Cu electrode, and thickness is 100 μm.
In the present embodiment, upper encapsulated layer 4 and lower encapsulated layer 5 are polyimides, and thickness is 80 μm.
The preparation method of the fexible film heat flow transducer described in the present embodiment, specifically includes following steps:
The surface of electroded flexible substrate 1 is carried out by step 1, successively employing acetone, ethanol and deionized water, and
Flexible substrate 1 carries out ion beam bombardment cleaning afterwards, and cleaning is placed under nitrogen atmosphere and is dried;
Step 2, on flexible substrates sputtering hot-side temperature sensitive thin film resistance pair: the flexible substrate 1 after step 1 is processed
One side with band hot-side temperature sensitive thin film resistance, the rustless steel mask of 2 figures is set in together, and solid with rustless steel fixture
Fixed, being placed in vacuum is 6.0 × 10-4In the vacuum environment of Pa, with Pt alloy as target, being passed through purity is 99.999% (volume
Percentage ratio) argon as sputtering medium, sputtering pressure be 0.4Pa, sputtering power be 120W, use d.c. sputtering method
Pt alloy deposition has the one side of mask in flexible substrate 1, and deposit thickness is 1 μm, obtains patterned hot-side temperature sensitivity thin
Membrane resistance pair, the resistance of each hot-side temperature sensitive thin film resistance is about 150 Ω;
Step 3, on flexible substrates sputtering cold junction temperature sensitive thin film resistance pair: the flexible substrate 1 after step 2 is processed
Another side with band cold junction temperature sensitive thin film resistance, the rustless steel mask of 3 figures is set in together, and use rustless steel fixture
Fixing, being placed in vacuum is 6.0 × 10-4In the vacuum environment of Pa, with Pt alloy as target, being passed through purity is 99.999%
The argon of (percent by volume) as sputtering medium, sputtering pressure be 0.4Pa, sputtering power be 120W, use d.c. sputtering
Method by Pt alloy deposition at the another side of flexible substrate 1, deposit thickness is 1 μm, obtains patterned cold junction temperature sensitive
Film resistor pair, the resistance of each cold junction temperature sensitive thin film resistance is about 150 Ω;
Step 4, welding electric conductors also connect power supply: use conductive silver paste step 3 is processed after flexible substrate on defeated
Entering termination electrode (11 and 13) to be connected with power supply by wire, signal output part electrode (10 and 12) is by wire with voltameter even
Connecing, described power supply is constant pressure source, and its voltage is output as 1V, and electric lead is the Pt silk of 100 μm;
In step 5, employing, encapsulated layer and lower encapsulated layer are packaged: in accordance with the order from top to bottom by upper encapsulated layer, step
The structure, the lower encapsulated layer that obtain after rapid 4 process are stacked together, and then air locking i.e. can get flexible thin of the present invention
Film heat flow transducer.
In the present embodiment, the temperature-sensitive resistor 6,7,8,9 that four sizes are identical constitutes a Wheatstone bridge,
Not having hot-fluid through this heat flow transducer surface, the resistance of temperature sensitive thin film resistance 6,7,8,9 is R0, the temperature of sensor
Degree is T0, when having hot-fluid through this heat flow transducer, hot-side temperature sensitive thin film resistance 6,7 temperature now is TS, cold end temperature
Degree sensitive thin film resistance 8,9 temperature now is TF, the most now the signal of outfan 10 and 12 is respectively as follows:
Wherein, V is input terminal voltage, and β is the temperature-coefficient of electrical resistance of temperature sensitive thin film resistance, and now hot-side temperature is sensitive
The resistance of film resistor 6,7 is R0[1+β(TS-T0)], the resistance of cold junction temperature sensitive thin film resistance 8,9 is R0[1+β(TF-
T0)], now the signal of sensor is output as:
β [(T is understood according to estimationF-T0)+(TS-T0)] < < 2, so the signal of sensor is output as:
According to Fourier's law Q=λ Δ T/d, wherein Q is heat flow density, and λ is the heat conductivity of heat insulation layer, and d is heat insulation layer
Thickness, is brought into this formula in formula (4), obtains heat flow density Q and output signal VSIGRelation:
The present invention provide film heat flux sensor using flexible substrate as carrier, it is possible to bend to arbitrary shape directly against
On variously-shaped measured object surface, substantially increase the scope of application of film heat flux sensor;And this heat flow transducer volume
Little, it is possible to quickly, stably and accurately measure measured object surface heat flow density.
Above the specific embodiment of the present invention is described.It is to be appreciated that the present invention does not limit to and appeal
Particular implementation, those skilled in the art can make various deformation or amendment in the claimed range of right, have no effect on
The flesh and blood of the present invention.
Claims (6)
1. a fexible film heat flow transducer, is followed successively by lower encapsulated layer (5), cold junction temperature sensitive thin film resistance pair from bottom to top
(3), flexible substrate (1), hot-side temperature sensitive thin film resistance to (2) and upper encapsulated layer (4), in described flexible substrate arrange run through
The electrode of flexible substrate, for by cold junction temperature sensitive thin film resistance to and hot-side temperature sensitive thin film resistance to formed a favour
Stone electric bridge, the input of Wheatstone bridge connects constant pressure source, described cold junction temperature sensitive thin film resistance to and hot-side temperature quick
The resistance of the resistance of sense film resistor centering is 10-1000 Ω.
Fexible film heat flow transducer the most according to claim 1, it is characterised in that described flexible substrate is that polyamides is sub-
Amine, Kynoar or PEN, thickness is 100-300 μm.
Fexible film heat flow transducer the most according to claim 1, it is characterised in that described hot-side temperature sensitive thin film electricity
Hindering, the material of cold junction temperature sensitive thin film resistance pair is Pt, Ni or Cu, and its thickness is 1-2 μm.
Fexible film heat flow transducer the most according to claim 1, it is characterised in that described upper encapsulated layer, lower encapsulated layer
For polyimides, Parylene or polyethylene, thickness is 50-100 μm.
5. a preparation method for fexible film heat flow transducer, comprises the following steps:
Step 1, the surface of flexible substrate process: select the low flexible high molecular material of thermal conductivity as substrate, first in flexibility
Form the electrode running through substrate on substrate, then successively use acetone, ethanol and deionized water that the surface of flexible substrate is carried out
Cleaning, flexible substrate then carries out ion beam bombardment cleaning, cleaning is placed under nitrogen atmosphere and is dried;
Step 2, on flexible substrates sputtering hot-side temperature sensitive thin film resistance pair: of the flexible substrate after step 1 is processed
Face uses hot-side temperature sensitive thin film resistance to mask plate as mask, and the method depositing temperature thereon using d.c. sputtering is quick
The thin-film material of sense film resistor, obtains hot-side temperature sensitive thin film resistance pair, and wherein, the resistance of each resistance is 10-1000
Ω;
Step 3, on flexible substrates sputtering cold junction temperature sensitive thin film resistance pair: the flexible substrate after step 2 is processed another
One side uses cold junction temperature sensitive thin film resistance to mask plate as mask, uses the method depositing temperature thereon of d.c. sputtering
The thin-film material of sensitive thin film resistance, obtains cold junction temperature sensitive thin film resistance pair, and wherein, the resistance of each resistance is 10-
1000 Ω, described hot-side temperature sensitive thin film resistance to and cold junction temperature sensitive thin film resistance to the electrode shape by running through substrate
Become Wheatstone bridge;
Step 4, welding electric conductors also connect power supply: the input in flexible substrate after using conductive silver paste step 3 to be processed
The constant voltage source that electrode is output as 1-10V by wire with voltage is connected, and signal output part electrode is by wire with voltameter even
Connect;
In step 5, employing, encapsulated layer and lower encapsulated layer are packaged: in accordance with the order from top to bottom by upper encapsulated layer, step 4 place
The structure, the lower encapsulated layer that obtain after reason are stacked together, then air locking.
The preparation method of fexible film heat flow transducer the most according to claim 5, it is characterised in that described in step 4
Electric lead be Pt silk, Cu silk or Au silk.
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108548608A (en) * | 2018-04-19 | 2018-09-18 | 中北大学 | A kind of 3D write-throughs aluminium oxide ceramics film heat flux sensor and preparation method thereof |
CN109798995A (en) * | 2019-01-17 | 2019-05-24 | 上海交通大学 | A kind of flexibility high sensitivity thin-film thermocouple type heat flow transducer and preparation method |
CN109941954A (en) * | 2019-03-04 | 2019-06-28 | 华东师范大学 | A kind of flexibility temperature sensor and preparation method |
CN110132451A (en) * | 2019-05-10 | 2019-08-16 | 中国电子科技集团公司第四十八研究所 | A kind of heat flow transducer and preparation method thereof |
CN110836691A (en) * | 2019-11-14 | 2020-02-25 | 电子科技大学 | Flexible multifunctional sensor capable of simultaneously detecting strain and temperature and preparation method thereof |
CN111983255A (en) * | 2020-08-31 | 2020-11-24 | 东南大学 | Flexible acceleration sensor based on heat convection principle |
CN112729580A (en) * | 2020-12-23 | 2021-04-30 | 西安交通大学 | Flexible temperature sensor and preparation method thereof |
FR3129211A1 (en) * | 2021-11-17 | 2023-05-19 | Arianegroup Sas | Drift-compensated resistive thermal fluxmeter and a method of manufacturing such a fluxmeter |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003058173A1 (en) * | 2001-12-26 | 2003-07-17 | Honeywell International Inc. | System and method for using magneto-resistive sensors as dual purpose sensors |
WO2003098163A1 (en) * | 2002-05-13 | 2003-11-27 | Delphi Technologies, Inc. | Optimized convection based mass airflow sensor circuit |
CN1845327A (en) * | 2005-04-07 | 2006-10-11 | 中国科学院电子学研究所 | Single slice integration temperature, humidity, pressure sensor chip based on polymer material |
CN202126319U (en) * | 2011-06-05 | 2012-01-25 | 蚌埠高灵传感系统工程有限公司 | Sensor integrated with strain resistors and elastic element |
CN102629446A (en) * | 2012-03-22 | 2012-08-08 | 京东方科技集团股份有限公司 | Display panel, operation and control method thereof and display device |
CN103308214A (en) * | 2013-05-13 | 2013-09-18 | 华北电力大学 | Real-time heat flow detection device and real-time heat flow detection method thereof |
CN203643055U (en) * | 2013-11-25 | 2014-06-11 | 中国电子科技集团公司第四十八研究所 | Thin-film heat flow sensor for high-temperature large-heat-flow measurement |
CN105548606A (en) * | 2015-12-10 | 2016-05-04 | 上海交通大学 | Flexible flow velocity sensor based on MEMS, application of flexible flow velocity sensor, and preparation method for flexible flow velocity sensor |
CN105606331A (en) * | 2015-12-18 | 2016-05-25 | 中国航天空气动力技术研究院 | Film platinum resistor heat flux sensor with flexible substrate, and manufacturing method for film platinum resistor heat flux sensor |
-
2016
- 2016-07-04 CN CN201610545724.3A patent/CN106225959A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003058173A1 (en) * | 2001-12-26 | 2003-07-17 | Honeywell International Inc. | System and method for using magneto-resistive sensors as dual purpose sensors |
WO2003098163A1 (en) * | 2002-05-13 | 2003-11-27 | Delphi Technologies, Inc. | Optimized convection based mass airflow sensor circuit |
CN1845327A (en) * | 2005-04-07 | 2006-10-11 | 中国科学院电子学研究所 | Single slice integration temperature, humidity, pressure sensor chip based on polymer material |
CN202126319U (en) * | 2011-06-05 | 2012-01-25 | 蚌埠高灵传感系统工程有限公司 | Sensor integrated with strain resistors and elastic element |
CN102629446A (en) * | 2012-03-22 | 2012-08-08 | 京东方科技集团股份有限公司 | Display panel, operation and control method thereof and display device |
CN103308214A (en) * | 2013-05-13 | 2013-09-18 | 华北电力大学 | Real-time heat flow detection device and real-time heat flow detection method thereof |
CN203643055U (en) * | 2013-11-25 | 2014-06-11 | 中国电子科技集团公司第四十八研究所 | Thin-film heat flow sensor for high-temperature large-heat-flow measurement |
CN105548606A (en) * | 2015-12-10 | 2016-05-04 | 上海交通大学 | Flexible flow velocity sensor based on MEMS, application of flexible flow velocity sensor, and preparation method for flexible flow velocity sensor |
CN105606331A (en) * | 2015-12-18 | 2016-05-25 | 中国航天空气动力技术研究院 | Film platinum resistor heat flux sensor with flexible substrate, and manufacturing method for film platinum resistor heat flux sensor |
Non-Patent Citations (3)
Title |
---|
徐多: "柔性基底瞬态热流率测量传感器的研制及其应用", 《科学通报》 * |
杨素君: "微型瞬态薄膜热流计的研制", 《中国优秀博硕士学位论文全文数据库 (硕士) 工程科技Ⅱ辑》 * |
王丰 等: "大量程薄膜热流传感器敏感元件设计", 《遥测遥控》 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108548608A (en) * | 2018-04-19 | 2018-09-18 | 中北大学 | A kind of 3D write-throughs aluminium oxide ceramics film heat flux sensor and preparation method thereof |
CN109798995A (en) * | 2019-01-17 | 2019-05-24 | 上海交通大学 | A kind of flexibility high sensitivity thin-film thermocouple type heat flow transducer and preparation method |
CN109941954A (en) * | 2019-03-04 | 2019-06-28 | 华东师范大学 | A kind of flexibility temperature sensor and preparation method |
CN110132451A (en) * | 2019-05-10 | 2019-08-16 | 中国电子科技集团公司第四十八研究所 | A kind of heat flow transducer and preparation method thereof |
CN110836691A (en) * | 2019-11-14 | 2020-02-25 | 电子科技大学 | Flexible multifunctional sensor capable of simultaneously detecting strain and temperature and preparation method thereof |
CN111983255A (en) * | 2020-08-31 | 2020-11-24 | 东南大学 | Flexible acceleration sensor based on heat convection principle |
CN112729580A (en) * | 2020-12-23 | 2021-04-30 | 西安交通大学 | Flexible temperature sensor and preparation method thereof |
FR3129211A1 (en) * | 2021-11-17 | 2023-05-19 | Arianegroup Sas | Drift-compensated resistive thermal fluxmeter and a method of manufacturing such a fluxmeter |
WO2023089255A1 (en) * | 2021-11-17 | 2023-05-25 | Arianegroup Sas | Resistive thermal flux meter with compensated drift and process for manufacturing such a flux meter |
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