CN102419217B - Metal film micron-scale thermocouple device - Google Patents
Metal film micron-scale thermocouple device Download PDFInfo
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- CN102419217B CN102419217B CN 201110241103 CN201110241103A CN102419217B CN 102419217 B CN102419217 B CN 102419217B CN 201110241103 CN201110241103 CN 201110241103 CN 201110241103 A CN201110241103 A CN 201110241103A CN 102419217 B CN102419217 B CN 102419217B
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Abstract
The invention provides a metal film micron-scale thermocouple device. The thermocouple device comprises an insulating substrate, and a metal film thermocouple or a thermocouple array composed of a plurality of metal film thermocouples is attached to the insulating substrate, wherein the metal film thermocouple is two doubled-up films of a single metal, the width of one narrow band is less than 20 microns, and the width of the other wide band is more than 100 microns. Compared with the prior art, the metal film micron-scale thermocouple device is easy to prepare, can realize measurement on the local temperature of micron scale, and can realize characterization for the temperature distribution on a plane, which is in contact with the thermocouple array, by being used in a combinational array manner.
Description
Technical field
The invention belongs to the temperature measurement technology field, be specifically related to micro-meter scale thermopair and array that a kind of single-layer metal film consists of.
Background technology
Thermopair has the advantages such as high precision, fast response time as thermometric effective means, all is widely used in the every field with temperature correlation.The groundwork principle of thermopair is to utilize the Seebeck effect, being about to two kinds of different conductor/semiconductor one ends connects as the hot junction, the other end of two conductors then places the flat-temperature zone as cold junction, (being the conductor/semiconductor both end voltage and the ratio of the temperature difference) is different because the Seebeck coefficient of this bi-material, so the temperature difference between hot junction and cold junction can be converted into voltage signal, then by can oppositely trying to achieve temperature to just reading of voltage signal.
Film thermocouple then is the form that two kinds of conductor/semiconductor materials all is prepared into film, as with on two kinds of thin film deposition to dielectric base.Compare common thermocouple, because film thermocouple small volume and be easy to preparation, and compatible with existing micro-nano processing technology, can be integrated in chip, so be applied to more local temperature survey aspect such as chip temperature measurement etc.
Yet, for thermopair or film thermocouple, in order to realize thermometric, must use two kinds of different materials of Seebeck coefficient to measure, and for block materials, it is constant that Seebeck coefficient keeps substantially.Therefore need to it at one end be engaged to processing such as bi-material weld in preparation process.For film thermocouple, as utilize the modes such as photoetching plated film to be prepared, then need to finish respectively at twice the deposition of different materials film.Owing to need to engage bi-material, in preparation process, can introduce various interfacial effects unavoidably, anti-etc. such as the thermal stress between impurity, different materials and dead resistance, these all can impact stability and the accuracy of thermopair; And for film thermocouple, double layer material not only needs dual technique, and also can the flatness on test plane be impacted in the stack of film bonding part film thickness.
Summary of the invention
The invention provides and a kind ofly prepare simple and easyly, can realize the thermocouple device that the local temperature of micro-meter scale is measured.
Thermocouple device of the present invention includes but are not limited to one of insulating substrate, prepare, be deposited on occasionally thermocouple arrays of on-chip metallic film thermoelectricity by micro-nano processing technology, it is characterized in that, described metallic film thermopair is single two center-fold sheets of planting metal, wherein, the width of fillet band is less than 20 microns, and the width of another wide band is greater than 100 microns.
Thermopair and thermocouple arrays device directly are attached to the probe base surface, the stable and larger metallic conductor of Seebeck coefficient of character of use, and such as Cr, Ni, Pd, Sc, Ta, Ti, Zr, the metals such as Bi.The band of each thermopair is that thickness is identical, the rectangular metallic film that width is different, and the break of two film fillets is called the hot junction, and the end then is referred to as cold junction.
The electron scanning micrograph of the synoptic diagram of thermopair and material object as shown in Figure 1.
The present invention can realize to plane that thermocouple arrays contacts on Temperature Distribution characterize.The function that this device possesses comprises: (1) is connected to the high-accuracy voltage table with this thermocouple device, can carry out real-time one-point measurement to the temperature of the local scope of micro-meter scale; (2) array that forms of this thermocouple device is connected to the high-accuracy voltage table by multi-strobe circuit, can realize for whole plane that whole thermocouple arrays contacts on some points in real time, accurate temperature measurement, and can obtain by Computer Processing Temperature Distribution and the variation tendency on whole plane.
Compared with prior art, this thermocouple device and thermocouple arrays device have following advantage with respect to other micro-meter scale temperature means:
(1) the passive thermometric of contact, it is more accurate to measure, and can provide the temperature variation in the local scope under the micro-meter scale, and the thermometric mode is simple, and device stability is high;
(2) array device in conjunction with Computer Processing, can carry out Real-Time Monitoring to the temperature variation on the surface of testee;
(3) with respect to the film thermocouple device, preparation technology simplifies greatly, and is with low cost, and avoided different materials may have various effects at the interface, improved precision and the stability measured.
Description of drawings
Fig. 1 is the electron scanning micrograph of thermopair material object;
Fig. 2 is the synoptic diagram that concerns of the measured voltage of thermopair and actual temperature;
Fig. 3 is the temperature profile on the measured whole tested plane of thermocouple arrays.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
Example one
1. design and process preparation and have single mask of planting the metallic film thermopair, the width of thermopair two arms is respectively 1.5 microns and 200 microns;
2. substrate is selected glass, obtains a 2 inches diameter, the circular substrate that thickness is 0.6 millimeter by processing technologys such as cutting polishings.Substrate with acetone, alcohol, deionized water respectively in supersonic cleaning machine clear 5 minutes to guarantee cleaning surfaces;
Substrate cleaning complete after, select 5350 model photoresists commonly used in the microelectronic technique (German ALLRESIST company), made photoresist evenly be attached to surperficial 1 μ m in 1 minute through even glue under the sol evenning machine 4000rpm rotating speed, and 105 degrees centigrade of lower bakings 30 minutes.Afterwards, utilize mask to pass through ultraviolet photoetching technique, use the MJB4 litho machine of SUSS MicroTec company, under 300W mercury lamp power level, exposure 2.5s re-uses AR300-26 developer solution (German ALLRESIST company) and developed 60 seconds with the dilution that deionized water forms at 1: 7.In the PVD75 magnetron sputtering plating instrument that Kurt J.Lesker company produces, sputter thickness is the Ti film of 100nm, wherein, the background vacuum is 8E-7Torr, sputter gas Ar gas, air pressure 3mTorr, d.c. sputtering power is 120W, sputtering time is 16 minutes, and placement was peeled off in about 15 minutes in acetone again, namely finished the preparation of Ti material film thermopair.
4. when using, used thermopair electrode can be connected with the accurate voltage table (such as the 2182A of Keithley company nanovoltmeter).By with computer programming (such as the LabVIEW program) thermopair being carried out reading.The actual measurement temperature can be passed through standard (commercialization) temp measuring method, as T-shaped thermoelectricity occasionally the Pt100/Pt1000 temperature detecting resistance calibrate, measured voltage and the relation of actual temperature are as shown in Figure 2.
Example two
1. design and process preparation and have single mask of planting the metallic film thermocouple arrays, this array is comprised of a plurality of thermopairs, and the width of each thermopair two arm is respectively 3 microns and 100 microns;
2. substrate is selected glass, obtains a 2 inches diameter, the circular substrate that thickness is 0.6 millimeter by processing technologys such as cutting polishings.Substrate with acetone, alcohol, deionized water respectively in supersonic cleaning machine clear 5 minutes to guarantee cleaning surfaces;
Substrate cleaning complete after, select 5350 model photoresists commonly used in the microelectronic technique (German ALLRESIST company), made photoresist evenly be attached to surperficial 1 μ m in 1 minute through even glue under the sol evenning machine 4000rpm rotating speed, and 105 degrees centigrade of lower bakings 30 minutes.Afterwards, utilize mask to pass through ultraviolet photoetching technique, use the MJB4 litho machine of SUSS MicroTec company, under 300W mercury lamp power level, exposure 2.5s re-uses AR300-26 developer solution (German ALLRESIST company) and developed 60 seconds with the dilution that deionized water forms at 1: 7.In the PVD75 magnetron sputtering plating instrument that Kurt J.Lesker company produces, sputter thickness is the Ni film of 100nm, wherein, the background vacuum is 8E-7Torr, sputter gas Ar gas, air pressure 4.5mTorr, d.c. sputtering power is 120W, sputtering time is 15 minutes, and placement was peeled off in about 15 minutes in acetone again, namely finished the preparation of Ni material film thermocouple arrays.
4. when using, the electrode of thermocouple arrays can be introduced together the multi-channel gating device of a homemade multi-channel gating device or commerce (such as Keithley company 7001, multi-channel gating device is used for controlling a certain road signal for logical), again by multi-channel gating device be connected with the accurate voltage table (such as the 2182A of Keithley company nanovoltmeter).By successively each thermopair in the gating thermocouple arrays of (such as the LabVIEW program) multi-channel gating device that computerizeds control, thermopair is carried out reading.Method by this circulation gating reading can obtain the measured temperature of each thermopair in real time, and further utilizes the disposal routes such as data interpolating to obtain the temperature profile (such as Fig. 3) on whole tested plane.
In above-described embodiment, the metallic conductor that thermoelectric occasionally thermocouple arrays adopts except Ni and Ti, can also be Cr,, Pd, Sc, Ta,, Zr, the metals such as Bi.
More than describe the present invention in detail by preferred embodiment, those skilled in the art is to be understood that, the above only is the preferred embodiments of the present invention, in the scope that does not break away from essence of the present invention, can make certain distortion or modification to device architecture of the present invention, all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (4)
1. thermocouple device, comprise insulating substrate, be attached with the thermocouple arrays that the occasionally a plurality of metallic film thermopairs of metallic film thermoelectricity consist of at insulating substrate, it is characterized in that, described metallic film thermopair is single two center-fold sheets of planting metal, wherein, the width of fillet band is less than 20 microns, and the width of another wide band is greater than 100 microns.
2. thermocouple device as claimed in claim 1 is characterized in that, the material of described metallic film is Cr, Ni, Pd, Sc, Ta, Ti, Zr, a kind of among the Bi.
3. thermocouple device as claimed in claim 1 is characterized in that, in the thermocouple arrays that is combined by N metallic film thermopair, each metallic film thermopair is drawn two paths of signals, causes respectively voltage table by 2N circuit lead.
4. thermocouple device as claimed in claim 1 is characterized in that, in the thermocouple arrays that is combined by N metallic film thermopair, an end of each metallic film thermopair connects jointly as ground wire, causes respectively voltage table by N+1 circuit lead.
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| CN 201110241103 CN102419217B (en) | 2011-08-22 | 2011-08-22 | Metal film micron-scale thermocouple device |
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| CN 201110241103 CN102419217B (en) | 2011-08-22 | 2011-08-22 | Metal film micron-scale thermocouple device |
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| CN102419217B true CN102419217B (en) | 2013-04-10 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105698953B (en) * | 2014-11-27 | 2018-08-28 | 北京大学 | A kind of temperature detection method based on the passive thermocouple of graphene |
| CN105806503B (en) * | 2016-04-20 | 2018-07-06 | 中国科学院工程热物理研究所 | A kind of multiple spot film thermocouple structure for computational fluid dynamics temperature survey |
| US9863360B2 (en) * | 2016-06-10 | 2018-01-09 | Ford Global Technologies, Llc | Systems and methods for adjusting fuel injection based on a determined fuel rail temperature |
| CN106918398B (en) * | 2017-04-20 | 2019-06-18 | 安徽春辉仪表线缆集团有限公司 | A kind of computer CPU temperature thermocouple structure |
| CN107328808B (en) * | 2017-06-30 | 2020-03-13 | 西安工业大学 | Substrate for testing Seebeck coefficient of semiconductor film and preparation and testing method thereof |
| EP3435048A1 (en) * | 2017-07-25 | 2019-01-30 | Heraeus Sensor Technology GmbH | Sensor for measuring a spatial temperature profile and method for producing a sensor unit |
| CN109798990B (en) * | 2017-11-17 | 2021-05-25 | 美的集团股份有限公司 | Temperature sensor array and heating equipment |
| US11480479B2 (en) | 2019-02-04 | 2022-10-25 | The Board Of Trustees Of The University Of Illinois | Microscale thermocouple probe for intracellular temperature measurements |
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| US5986261A (en) * | 1996-04-29 | 1999-11-16 | Nanoptics, Inc. | Tapered structure suitable for microthermocouples microelectrodes, field emission tips and micromagnetic sensors with force sensing capabilities |
| CN1235273A (en) * | 1999-05-05 | 1999-11-17 | 中国科学院上海冶金研究所 | Silicon-metal dual layer structure film thermopile |
| JP3432257B2 (en) * | 1993-04-02 | 2003-08-04 | シチズン時計株式会社 | Method of manufacturing thermoelectric generator |
| CN101324472A (en) * | 2008-07-14 | 2008-12-17 | 大连理工大学 | Method for manufacturing embedded type multi-layer compound film cutting temperature sensor |
| CN101493360A (en) * | 2009-01-05 | 2009-07-29 | 东南大学 | Thermocouple with micron or nanometer grade tip curvature radius and method for producing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7073938B2 (en) * | 2001-10-31 | 2006-07-11 | The Regents Of The University Of Michigan | Micromachined arrayed thermal probe apparatus, system for thermal scanning a sample in a contact mode and cantilevered reference probe for use therein |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3432257B2 (en) * | 1993-04-02 | 2003-08-04 | シチズン時計株式会社 | Method of manufacturing thermoelectric generator |
| US5986261A (en) * | 1996-04-29 | 1999-11-16 | Nanoptics, Inc. | Tapered structure suitable for microthermocouples microelectrodes, field emission tips and micromagnetic sensors with force sensing capabilities |
| CN1235273A (en) * | 1999-05-05 | 1999-11-17 | 中国科学院上海冶金研究所 | Silicon-metal dual layer structure film thermopile |
| CN101324472A (en) * | 2008-07-14 | 2008-12-17 | 大连理工大学 | Method for manufacturing embedded type multi-layer compound film cutting temperature sensor |
| CN101493360A (en) * | 2009-01-05 | 2009-07-29 | 东南大学 | Thermocouple with micron or nanometer grade tip curvature radius and method for producing the same |
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