CN111238361A - Graphene temperature strain sensor - Google Patents
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Abstract
The application relates to a graphene temperature strain sensor, wherein a first strain resistance grid and a second strain resistance grid in the graphene sensor are same in shape and are alternately and symmetrically arranged, and the resistance temperature coefficient ratio of the two materials is not equal to the resistance strain coefficient ratio of the two materials. The real-time voltages of the first strain resistance grid and the second strain resistance grid are output to the detection circuit through a signal output circuit formed by four electrodes. The detection circuit can detect a first voltage at two ends of the first strain resistance grid and a second voltage at two ends of the second strain resistance grid, calculate a first real-time resistance and a second real-time resistance according to the first voltage and the second voltage, and finally calculate the temperature and the strain of the object to be detected according to the first real-time resistance and the second real-time resistance. Therefore, the graphene temperature strain sensor provided by the application can realize accurate measurement of temperature and strain on the premise of not needing any temperature or strain compensation elements, and can realize effective simplification of a circuit.
Description
Technical Field
The application relates to the technical field of temperature and strain detection, in particular to a graphene temperature strain sensor.
Background
In the prior art, a thermocouple is generally used to detect the temperature of an object to be detected, and a resistance strain gauge is used to detect the strain of the object to be detected.
However, the temperature measured using the thermocouple may be greatly affected by the thermocouple strain, while the strain measured by the resistance strain gauge is simultaneously affected by the ambient temperature. Therefore, the thermocouple and the resistance strain gauge in the prior art are greatly influenced by the outside world, and the temperature and the strain of an object to be detected cannot be accurately measured simultaneously.
Disclosure of Invention
Based on this, it is necessary to provide a graphene temperature strain sensor for solving the problems that in the prior art, both a thermocouple and a resistance strain gauge are greatly influenced by the outside world and cannot accurately measure the temperature and the strain of an object to be detected at the same time.
The application provides a graphite alkene temperature strain sensor includes:
the graphene sensor comprises a first strain resistance grid and a second strain resistance grid, wherein the first strain resistance grid and the second strain resistance grid are in the same shape and are arranged alternately and symmetrically, and the ratio of the temperature resistance coefficients of a first strain resistance grid material to a second strain resistance grid material is not equal to the ratio of the temperature resistance coefficients of the first strain resistance grid to the second strain resistance grid;
the signal output circuit comprises a first electrode, a second electrode, a third electrode and a fourth electrode, wherein the first strain resistance grid is connected between the first electrode and the second electrode in series, the second strain resistance grid is connected between the third electrode and the fourth electrode in series, and the signal output circuit is used for outputting a voltage signal; and
and the detection circuit is electrically connected with the first electrode, the second electrode, the third electrode and the fourth electrode respectively and is used for detecting a first voltage at two ends of the first strain resistance grid and a second voltage at two ends of the second strain resistance grid, calculating a first real-time resistance of the first strain resistance grid according to the first voltage, calculating a second real-time resistance of the second strain resistance grid according to the second voltage, and calculating the temperature and the strain of an object to be detected according to the first real-time resistance and the second real-time resistance.
In one embodiment, the first strained resistive gate comprises:
the transition layer is attached to the surface of the object to be detected and used for improving the binding force between the graphene sensor and the surface of the object to be detected;
the bottom end functional layer covers one side of the transition layer, which is far away from the surface of the object to be detected, and is used for providing insulation protection;
the structural layer covers one side, far away from the transition layer, of the bottom end functional layer and is used for forming a graphene strain resistance grid; and
and the top end functional layer covers one side, far away from the bottom end functional layer, of the structural layer and is used for providing insulation protection, and the first electrode and the second electrode are exposed outside the top end functional layer.
In one embodiment, the pattern of the structural layer is a strip or a circle in a zigzag distribution.
In one embodiment, the bottom functional layer and/or the top functional layer is a multilayer composite film structure.
In one embodiment, the detection circuit comprises:
a first voltage detection circuit, a first end of which is connected to the first electrode and a second end of which is connected to the second electrode, for detecting the first voltage across the first strain resistor gate;
a second voltage detection circuit, a first end of which is connected to the third electrode and a second end of which is connected to the fourth electrode, for detecting the second voltage across the second strain resistor gate;
a first terminal of the signal amplifying circuit is connected with a third terminal of the first voltage detection circuit, a second terminal of the signal amplifying circuit is connected with a third terminal of the second voltage detection circuit, and the signal amplifying circuit is used for receiving the first voltage through the first terminal, receiving the second voltage through the second terminal, and respectively amplifying the first voltage and the second voltage; and
and the input end of the signal processing circuit is connected with the third end of the signal amplifying circuit and is used for receiving the amplified first voltage and the amplified second voltage, calculating the first real-time resistance of the first strain resistance grid according to the first voltage, calculating the second real-time resistance of the second strain resistance grid according to the second voltage, and calculating the temperature and the strain of the object to be detected according to the first real-time resistance and the second real-time resistance.
In one embodiment, the first voltage detection circuit includes:
a wheatstone bridge branch, a first end of which is connected with the first electrode, a second end of which is connected with the second electrode, and a third end of which forms a third end of the first voltage detection circuit;
a first end of the bridge arm resistance adjusting branch is connected with a fourth end of the Wheatstone bridge branch, a second end of the bridge arm resistance adjusting branch is connected with a fifth end of the Wheatstone bridge branch, and the bridge arm resistance adjusting branch is used for adjusting the resistance value of the resistors of the same bridge arm in the Wheatstone bridge branch;
and a first end of the voltage zero setting amplification branch is connected with the first electrode, a second end of the voltage zero setting amplification branch is connected with the second electrode, a third end of the voltage zero setting amplification branch is connected with the first end of the Wheatstone bridge branch, and a fourth end of the voltage zero setting amplification branch is connected with the third end of the bridge arm resistance adjustment branch, and is used for setting the voltage of the third end of the Wheatstone bridge branch to zero when the first strainar resistor gate resistance changes.
In one embodiment, the signal amplification circuit includes:
a voltage in-phase amplifying branch, a first end of which forms a first end of the signal amplifying circuit, a second end of which forms a second end of the signal amplifying circuit, and a third end and a fourth end of which are respectively connected with an input end of the signal processing circuit, and are used for receiving the first voltage through the first end and the second voltage through the second end, respectively amplifying the first voltage and the second voltage, and transmitting the amplified first voltage and the amplified second voltage to the signal processing circuit; and
and the first end of the current in-phase amplification branch circuit is connected with the third end of the voltage in-phase amplification branch circuit, the second end of the current in-phase amplification branch circuit is connected with the fourth end of the voltage in-phase amplification branch circuit, the third end and the fourth end of the current in-phase amplification branch circuit are respectively connected with the input end of the signal processing circuit, and the current in-phase amplification branch circuit is used for receiving the first voltage through the first end of the current in-phase amplification branch circuit, receiving the second voltage through the second end of the current in-phase amplification branch circuit, respectively amplifying the first voltage and the second voltage, and transmitting the amplified first voltage and the amplified second voltage to the signal processing circuit.
In one embodiment, the structural layer is a multi-layer graphene metal composite film material.
In one embodiment, the first strained resistive gate further comprises:
and the protective layer covers one side of the top end functional layer, which is far away from the structural layer, and is used for protecting the first strain resistance gate.
In one embodiment, the protective layer is a graphene modified coating.
In the graphene temperature strain sensor provided by the application, because the first strain resistance gate and the second strain resistance gate in the graphene sensor are the same in shape and are alternately and symmetrically arranged, and the ratio of the resistance temperature coefficients of the two materials is not equal to the ratio of the resistance strain coefficients of the two materials, the change of the temperature and the stress of an object to be measured can be reflected through the resistance change of the first strain resistance gate and the second strain resistance gate. In the measuring process, the real-time voltages of the first strain resistance grid and the second strain resistance grid can be output to the detection circuit through a signal output circuit consisting of four electrodes. The detection circuit can detect a first voltage at two ends of the first strain resistance grid and a second voltage at two ends of the second strain resistance grid, calculate a first real-time resistance of the first strain resistance grid according to the first voltage, calculate a second real-time resistance of the second strain resistance grid according to the second voltage, and finally calculate the temperature and the strain of the object to be detected according to the first real-time resistance and the second real-time resistance. Therefore, compare in prior art, the graphite alkene temperature strain sensor that this application provided can realize under the prerequisite that need not any temperature or strain compensation component the independent measurement to temperature and meeting an emergency, decoupling zero temperature and meeting an emergency promptly, greatly reduce the degree of influence each other between temperature and the meeting an emergency, improved the accuracy of measurement. Due to the fact that the graphene temperature strain sensor can achieve integrated detection of temperature and strain, circuit simplification and size reduction can be achieved effectively.
Drawings
Fig. 1 is a schematic view of an application of a graphene temperature strain sensor provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a portion of a graphene temperature strain sensor provided in an embodiment of the present application;
fig. 3 is a schematic diagram of a connection relationship of a detection circuit of a graphene temperature strain sensor according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram illustrating a connection relationship between a first voltage detection circuit and a second voltage detection circuit of a graphene temperature strain sensor according to an embodiment of the present disclosure;
fig. 5 is a schematic structural view of a first strain resistance gate/a second strain resistance gate of a graphene temperature strain sensor according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of another graphene temperature strain sensor provided in an embodiment of the present application;
fig. 7 is a schematic structural diagram of another graphene sensor arrangement of a graphene temperature strain sensor according to an embodiment of the present application.
Description of the reference numerals
100 graphene temperature strain sensor
10 graphene sensor
110 first strained resistive gate
111 transition layer
112 bottom functional layer
113 structural layer
114 top functional layer
115 protective layer
120 second strain resistance grid
20 signal output circuit
210 first electrode
220 second electrode
230 third electrode
240 fourth electrode
30 detection circuit
310 first voltage detection circuit
311 Wheatstone bridge circuit
312 bridge arm resistance adjustment branch
313 voltage zero setting amplifying branch
320 second voltage detection circuit
330 signal amplifying circuit
331 voltage in-phase amplifying branch
332 current in-phase amplifying branch
340 signal processing circuit
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is capable of embodiments in many different forms than those described herein and those skilled in the art will be able to make similar modifications without departing from the spirit of the application and it is therefore not intended to be limited to the embodiments disclosed below.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It can be understood that in the prior art, a thermocouple is generally used for detecting the temperature of an object to be detected, and a resistance strain gauge is used for detecting the strain of the object to be detected. The temperature measured by the thermocouple may be influenced by thermocouple strain to generate a large error, and the strain measured by the resistance strain gauge is influenced by the ambient temperature at the same time, so that an error also exists, namely, the result measured by the prior art is the strain influenced by the temperature or the temperature influenced by the strain, and the measurement result is inaccurate. In addition, the prior art has problems such as the need for cold end compensation for the thermocouple and a large sensor footprint with both temperature and strain separation. Therefore, the application provides a graphene temperature strain sensor 100, which can solve various problems that temperature and strain cannot be accurately measured, measurement accuracy is low, sensitivity is low, external interference is serious, and the application environment and the installation space are limited.
Referring to fig. 1-2, the present application provides a graphene temperature strain sensor 100. The graphene temperature strain sensor 100 includes a graphene sensor 10, a signal output circuit 20, and a detection circuit 30. The graphene sensor 10 comprises a first strain resistance grid 110 and a second strain resistance grid 120, the first strain resistance grid 110 and the second strain resistance grid 120 are identical in shape and are arranged alternately and symmetrically, and the ratio of the temperature coefficient of resistance of the material of the first strain resistance grid 110 to the temperature coefficient of resistance of the material of the second strain resistance grid 120 is not equal to the ratio of the temperature coefficient of resistance of the material of the first strain resistance grid 110 to the strain coefficient of resistance of the second strain resistance grid 120. The signal output circuit 20 includes a first electrode 210, a second electrode 220, a third electrode 230 and a fourth electrode 240, the first strained resistive grid 110 is connected in series between the first electrode 210 and the second electrode 220, the second strained resistive grid 120 is connected in series between the third electrode 230 and the fourth electrode 240, and the signal output circuit 20 is configured to output a voltage signal. The detection circuit 30 is electrically connected to the first electrode 210, the second electrode 220, the third electrode 230, and the fourth electrode 240, respectively, and is configured to detect a first voltage across the first strain resistive grid 110 and a second voltage across the second strain resistive grid 120, calculate a first real-time resistance of the first strain resistive grid 110 according to the first voltage, calculate a second real-time resistance of the second strain resistive grid 120 according to the second voltage, and calculate a temperature and a strain of an object to be detected according to the first real-time resistance and the second real-time resistance.
It is to be understood that the graphene temperature strain sensor 100 may include one or more graphene sensors 10, and each graphene sensor 10 includes a first strain resistance grid 110 and a second strain resistance grid 120. In this embodiment, the first strained resistive grid 110 and the second strained resistive grid 120 have the same shape, which means that the patterns of the internal resistive grids for sensing temperature and strain are the same, for example, the resistive grids are all square wave shapes with the same size. In addition, the first strained resistive gate 110 and the second strained resistive gate 120 are alternately and symmetrically arranged, as shown in fig. 2, that is, the two resistive gates are interlaced and symmetrically arranged. It can be understood that the first and second strained resistive grids 110 and 120 have the same shape and are arranged alternately and symmetrically, so that the two resistive grids are in the same environment and have the same amount of deformation, that is, the sensed temperature and strain are the same, thereby improving the accuracy of the measurement result.
It is to be understood that the present application does not limit the specific structure (size, shape and layout) of the resistance grids in the first and second strained resistance grids 110 and 120, as long as it can satisfy the measurement of the temperature and strain of the object to be measured. The structures of the first strain resistance grid 110 and the second strain resistance grid 120 can be set according to actual measurement environments, so that the adaptability of the graphene temperature strain sensor 100 to the environments can be improved, and the graphene temperature strain sensor is suitable for changeable environments with uneven local temperature or strain distribution and the like. Due to the specific structure selection of the first strain resistor grid 110 and the second strain resistor grid 120, the graphene temperature strain sensor 100 can eliminate or reduce the influence of temperature on strain measurement, so that the problem of large error of a strain measurement result caused by temperature change in a measurement environment is avoided, and of course, the influence of strain on temperature measurement can also be eliminated or reduced.
In one embodiment, the first and second strained resistive gates 110 and 120 may be graphene thin film resistive gates. Since different contents of graphene may cause different resistance temperature coefficients, the difference in resistance temperature coefficients between the first and second strained resistive grids 110 and 120 may be directly understood as different contents of graphene films respectively included therein, specifically, different thicknesses of the graphene films. Of course, the above embodiments do not constitute a limitation to the present application, and the first and second strained resistive grids 110 and 120 may be made different in resistance temperature system in other ways as long as they can meet the measurement requirements. In this embodiment, since the graphene film has a strong heat dissipation property, the first strain resistance grid 110 and the second strain resistance grid 120 formed by the graphene film resistance grid can increase the heat dissipation capability of the graphene temperature strain sensor 100, further improve the measurement accuracy, and prolong the service life.
It is understood that, since the first strained resistance grid 110 is connected in series between the first electrode 210 and the second electrode 220, and the second strained resistance grid 120 is connected in series between the third electrode 230 and the fourth electrode 240, the first electrode 210 and the second electrode 220 constitute a signal output terminal of the first strained resistance grid 110, and the third electrode 230 and the fourth electrode 240 together constitute a signal output terminal of the second strained resistance grid 120. In one embodiment, the first electrode 210, the second electrode 220, the third electrode 230, and the fourth electrode 240 may be film electrodes, and two external wires may be simultaneously led out from each electrode to be electrically connected to the detection circuit 30.
In this embodiment, the working principle of the graphene temperature stress sensor 100 is as follows: if the surface temperature of the object to be measured changes and strains are generated at the same time, the resistance values of the first strain resistance grid 110 and the second strain resistance grid 120 in the graphene sensor 10 mounted on the surface of the object to be measured change at this time. It is understood that the resistance value changes of the first and second strained resistive gates 110 and 120 caused by the temperature and strain co-action can be expressed as:
wherein, Δ R1、R01、k1、α1And Δ R2、R02、k2、α2The real-time resistance value change amount, the initial resistance value, the resistance strain coefficient and the resistance temperature coefficient of the first strain resistor gate 110 and the second strain resistor gate 120 are respectively. The initial resistance value may be measured at a temperature of ∈ ═ 0 and T ═ 0 ℃, where ∈ and T are the real-time strain and the real-time temperature generated by the first and second strain resistor grids 110 and 120, respectively.
In the actual measurement process, the initial resistance, the resistance strain coefficient, and the temperature coefficient of resistance in the first strained resistive gate 110 and the second strained resistive gate 120 are known quantities. The detection circuit 30 may detect a first voltage across the first strain resistor grid 110 and a second voltage across the second strain resistor grid 120, calculate a first real-time resistance of the first strain resistor grid 110 according to the first voltage, calculate a second real-time resistance of the second strain resistor grid 120 according to the second voltage, and calculate a corresponding real-time resistance value change amount according to the first real-time resistance and the second real-time resistance, respectively. Therefore, only the amount of strain ε and the temperature T are unknown in the above equation. It is to be understood that the present application does not limit the specific material of both the first and second strained resistive gates 110 and 120 as long as it can satisfy k1/k2≠α1/α2That is, at this time, the two unknown quantities of the strain quantity epsilon and the temperature T have unique solutions, that is, the detection circuit 30 can calculate the temperature and the strain of the object to be detected according to the first real-time resistor and the second real-time resistor. In one embodiment, the materials of the first and second strained resistive gates 110 and 120 may be different and satisfy k1/k2≠α1/α2. In another embodiment, the materials of the first and second strained resistive grids 110 and 120 may be the same, i.e. both graphene is used, but the content of graphene is different to ensure k1/k2≠α1/α2。
It can be understood that, since the stress and the strain are in a proportional linear relationship, the graphene temperature strain sensor 100 can also be used for measuring parameters such as stress and load. It can be understood that, compare in prior art and only can measure the strain that receives the temperature influence or receive stress influence temperature, the graphite alkene temperature strain sensor 100 that this application provided can realize simultaneously the independent measurement to temperature and strain, decoupling zero temperature and strain promptly to make the mutual influence between temperature and the strain weaken, thereby guarantee that the temperature result that obtains of measurement is hardly influenced by the strain, and the strain result is hardly influenced by the temperature, has greatly improved the accuracy of measuring.
In one embodiment, the graphene temperature strain sensor 100 may be fabricated using a Micro-Electro-mechanical system (MEMS) design. It is understood that MEMS, combined with microelectronics and micromachining techniques, can produce a variety of superior-performance, low-cost, miniaturized sensors. Therefore, compared with the conventional electromagnetic transformer, the MEMS-based graphene temperature-strain sensor 100 has the advantages of high measurement accuracy, small volume, light weight, low power consumption, low cost, integratability, and suitability for mass production. Other circuits or devices such as the detection circuit 30 in the present application may be based on the MEMS technology, so as to reduce the volume, weight, and power consumption of the graphene current sensor 100, and improve the measurement accuracy of the graphene temperature strain sensor 100.
In summary, in the graphene temperature strain sensor 100 provided in the present application, since the first and second strain resistance grids 110 and 120 in the graphene sensor 10 have the same shape, are alternately and symmetrically arranged, and have different resistance temperature coefficients, the changes of the temperature and the stress of the object to be measured can be reflected by the resistance changes of the first and second strain resistance grids 110 and 120. During the measurement, the real-time voltages of the first and second strain resistance grids 110 and 120 may be output to the detection circuit 30 through the signal output circuit 20 composed of four electrodes. The detection circuit 30 may detect a first voltage across the first strain resistive grid 110 and a second voltage across the second strain resistive grid 120, calculate a first real-time resistance of the first strain resistive grid 110 according to the first voltage, calculate a second real-time resistance of the second strain resistive grid 120 according to the second voltage, and finally calculate a temperature and a strain of the object to be detected according to the first real-time resistance and the second real-time resistance. Therefore, compared with the prior art, the graphene temperature strain sensor 100 provided by the application can realize accurate measurement of temperature and strain without any temperature or strain compensation element, and can realize effective simplification of a circuit. In addition, the graphene temperature strain sensor 100 provided by the application adopts an integrated temperature and strain monitoring technology, so that the graphene temperature strain sensor has the advantage of small intrusion space. The application provides a graphite alkene temperature strain sensor 100 is applicable to multiple occasions such as laboratory, workshop, can be in real time on-line monitoring spare part or the temperature and the stress in the equipment, specifically can be applied to the monitoring of in-process temperature and stress such as bearing, lathe tool cutter, steel smelting, oil extraction and chemical industry pressure vessel.
Referring to fig. 3, in one embodiment, the detection circuit 30 includes a first voltage detection circuit 310, a second voltage detection circuit 320, a signal amplification circuit 330, and a signal processing circuit 340. The first voltage detection circuit 310 has a first terminal connected to the first electrode 210 and a second terminal connected to the second electrode 220, and is configured to detect a first voltage across the first stressor gate 110. The second voltage detection circuit 320 has a first terminal connected to the third electrode 230 and a second terminal connected to the fourth electrode 240, and is configured to detect a second voltage across the second strain resistor grid 120. A first terminal of the signal amplifying circuit 330 is connected to the third terminal of the first voltage detecting circuit 310, a second terminal thereof is connected to the third terminal of the second voltage detecting circuit 320, and the signal amplifying circuit is configured to receive the first voltage via the first terminal, receive the second voltage via the second terminal, and amplify the first voltage and the second voltage, respectively. And an input end of the signal processing circuit 340 is connected to the third end of the signal amplifying circuit 330, and is configured to receive the amplified first voltage and the amplified second voltage, calculate a first real-time resistance of the first strain resistance gate 110 according to the first voltage, calculate a second real-time resistance of the second strain resistance gate 120 according to the second voltage, and calculate a temperature and a strain of the object to be detected according to the first real-time resistance and the second real-time resistance.
In this embodiment, a first end of the first voltage detection circuit 310 may be connected to the first electrode 210 through two external wires, and a second end of the first voltage detection circuit may be connected to the second electrode 220 through two external wires. Similarly, the first end of the second voltage detection circuit 320 may be connected to the third electrode 230 through two external wires, and the second end may be connected to the fourth electrode 240 through two external wires. Therefore, each electrode is connected with its corresponding voltage detection circuit through two external wires to realize the measurement of the real-time voltage of the first and second strain resistance grids 110 and 120. In one embodiment, the signal processing circuit 340 may include a digital-to-analog conversion and signal processing circuit and a single chip. The graphene temperature strain sensor 100 may further include a digital display screen or a PC terminal, and at this time, the graphene temperature strain sensor 100 may directly display parameters such as a current change amount, a resistance change amount, a real-time resistance, a temperature, a stress, or a strain.
Referring to fig. 4, in one embodiment, the first voltage detecting circuit 310 includes a wheatstone bridge branch 311, a bridge arm resistance adjusting branch 312, and a voltage-zeroing amplifying branch 313. Wheatstone bridge branch 311 having a first terminal
Connected to the first electrode 210 at a second end thereof
Is connected to the second electrode 220, and has a third terminal (V) of the first voltage detection circuit 310out) I.e. the signal output of the detection circuit 310. A first end of the arm resistance adjusting branch 312 is connected to the fourth end of the wheatstone bridge branch 311, and a second end thereof is connected to the fifth end of the wheatstone bridge branch 311And is used for adjusting the resistance of the resistors in the same bridge arm in the wheatstone bridge branch 311. The first terminal (+ V) of the voltage-zero amplifying branch 313 is connected to the first electrode 210, the second terminal (-V) thereof is connected to the second electrode 220, and the third terminal thereof is connected to the first terminal of the Wheatstone bridge branch 311
And a fourth end of the bridge arm resistance adjusting branch 312 is connected to the fourth end of the bridge arm resistance adjusting branch, and is used for zeroing the voltage at the third end of the wheatstone bridge branch 311 when the resistance of the first varistor gate 110 changes. In one embodiment, the voltage-nulling amplification branch 313 may comprise a voltage-nulling amplifier.
In this embodiment, taking the first electrode 210 as an example, according to the circuit connection relationship of this embodiment, the first electrode 210 may be connected to the first end of the wheatstone bridge branch 311 by one external lead, and the first electrode 210 may be connected to the first end of the voltage-zeroing amplifying branch 313 by another external lead, that is, each electrode is connected to its corresponding voltage detection circuit by two external leads, and the specific connection manner of other electrodes is not described herein again. In one embodiment, the second voltage detection circuit 320 may be identical to the first voltage detection circuit 310. Meanwhile, the first voltage detection circuit 310 and the second voltage detection circuit 320 may share one differential regulated voltage source.
In one embodiment, the wheatstone bridge branch 311 may be a wheatstone 1/4 bridge, and the wheatstone bridge branch 311 needs to ensure bridge balance during normal operation, and in this case, R1/R3-R2/RT needs to be satisfied. In general, a wheatstone bridge is set to R1 ═ R2 ═ R3, and RT ═ R3 needs to be satisfied. Since the first strained resistor grid 110 and the second strained resistor grid 120 may have a certain error from the expected resistance values during the manufacturing process, at this time, in order to satisfy the operating condition of the wheatstone bridge branch 311 and further improve the measurement accuracy of the first voltage and the second voltage, the R3 may be adjusted by the bridge arm resistance adjusting branch 312, so that R3 is equal to RT. Therefore, on the premise that the resistance values of the two resistance grids are not required to be adjusted through a complex process, the wheatstone bridge branch 311 can be adjusted only by setting the bridge arm resistance adjusting branch 312, temperature and strain errors caused by the preparation of the first strain resistance grid 110 and the second strain resistance grid 120 can be avoided, and the temperature and strain measurement accuracy of the graphene temperature strain sensor 100 is further improved.
In one embodiment, the signal amplifying circuit 330 includes a voltage in-phase amplifying branch 331 and a current in-phase amplifying branch 332. The first end of the voltage in-phase amplifying branch 331 forms the first end of the signal amplifying circuit 330, the second end of the voltage in-phase amplifying branch 331 forms the second end of the signal amplifying circuit 330, the third end and the fourth end of the voltage in-phase amplifying branch are respectively connected to the input end of the signal processing circuit 340, and are configured to receive the first voltage through the first end and the second voltage through the second end, respectively amplify the first voltage and the second voltage, and transmit the amplified first voltage and the amplified second voltage to the signal processing circuit 340. The first end of the current in-phase amplifying branch 332 is connected to the third end of the voltage in-phase amplifying branch 331, the second end of the current in-phase amplifying branch is connected to the fourth end of the voltage in-phase amplifying branch 331, the third end and the fourth end of the current in-phase amplifying branch are respectively connected to the input end of the signal processing circuit 340, and the current in-phase amplifying branch is configured to receive the first voltage through the first end thereof, receive the second voltage through the second end thereof, amplify the first voltage and the second voltage respectively, and transmit the amplified first voltage and the amplified second voltage to the signal processing circuit 340.
It is understood that during actual measurement, temperature, strain or stress may cause the resistance values of the first and second strained resistive gates 110 and 120 to change. Taking the first strainable resistor grid 110 as an example, the voltage zeroing amplifying branch 313 connected to the first strainable resistor grid can zero the voltage of the output end of the bridge arm where the first strainable resistor grid 110 is located, and at this time, the voltage signal of the output end (the third end) of the fixed bridge arm of the wheatstone bridge branch 311 can be changed. The voltage signal may be amplified by the voltage in-phase amplifying branch 331 and then input to the signal processing circuit 340. In one embodiment, if the transmission distance is long, a wall needs to be penetrated, or other obstacles exist in the middle, that is, the voltage carrier may be shielded or interfered, the current equidirectional amplifying branch 332 may be used to transmit the analog signal. In this embodiment, the third terminal of the wheatstone bridge branch 311 may output a voltage signal, and the voltage signal may be first amplified by the voltage in-phase amplifying branch 331, then input into the current in-phase amplifying branch 332, and finally input into the signal processing circuit 340. At this time, since the current loop is adopted to transmit the analog signal, the graphene temperature strain sensor 100 can be remotely monitored.
Referring also to fig. 5, in one embodiment, the first stressor gate 110 includes a transition layer 111, a bottom functional layer 112, a structural layer 113, and a top functional layer 114. The transition layer 111 is attached to the surface of the object to be detected, and is used for improving the binding force between the graphene sensor 10 and the surface of the object to be detected. The bottom functional layer 112 covers the side of the transition layer 111 away from the surface of the object to be detected for providing insulation protection. The structural layer 113 covers one side of the bottom functional layer 112 far away from the transition layer 111, and is used for forming a graphene strain resistance grid. The top functional layer 114 covers the side of the structural layer 113 away from the bottom functional layer 112 for providing insulation protection, and the first electrode 210 and the second electrode 220 are exposed outside the top functional layer 114. In one embodiment, the first electrode 210 and the second electrode 220 may be thin film electrodes, and the material thereof may be Au, Ag, or Cu.
In this embodiment, the transition layer 111 may be a thin film structure, and the material thereof may be Ni, Ci, or an alloy thereof, which may improve the bonding force between the surface of the object to be measured and the bottom functional layer 112. As the bottom end and the top end of the graphene temperature strain sensor 100, the bottom functional layer 112 and/or the top functional layer 114 may be made of a high-temperature-resistant insulating composite ceramic material, which can meet the requirements of certain acid-base corrosion and high-low temperature environments, and meanwhile, the material properties can also reduce the damage of external vibration and impact on the graphene temperature strain sensor 100 to a certain extent. In one embodiment, the bottom functional layer 112 and/or the top functional layer 114 may be Si3N4、Al2O3、SiO2And SiC.
In one embodiment, the first stressor gate 110 further comprises a protective layer 115. The protective layer 115 covers a side of the top functional layer 114 away from the structural layer 113 for protecting the first stressor gate 110. The protective layer 115 is a graphene modified coating. The graphene modified coating is a coating in which graphene is dispersed in epoxy, polyurethane, polyaniline and other coatings, can prolong a transmission channel of corrosive components in the protective coating by utilizing the chemical inertia and the barrier property of the graphene, and is suitable for water vapor contact protection and corrosion resistance in low-temperature environments such as salt spray, seawater and the like. It can be understood that the combination of the oxidation and corrosion resistance protection of the protection layer 115 and the high temperature non-contact protection of the bottom functional layer 112 and the top functional layer 114 can further improve the environmental adaptability of the graphene temperature strain sensor 100.
Referring to fig. 6 to 7, in one embodiment, the structural layer 113 is a multi-layer graphene metal composite thin film material, and can deform or break according to the temperature and strain of the surface of the object to be detected, so as to change the resistance of the object. The pattern of the structural layer 113 is a strip or a circle in a zigzag distribution. It is understood that the first and second strain resistance grids 110 and 120 respectively correspond to one sensitive grid, that is, two sensitive grids may be included in the structural layer 113 in each graphene sensor 10, so as to implement measurement of temperature and strain. In this embodiment, the pattern of the structural layer 113 may be a meandering rectangular strip or a circular shape, and the specific shape and layout of the pattern of the structural layer 113 are not limited in this application, and may be designed according to the measurement environment and the measurement type.
In one embodiment, the partial graphene temperature strain sensor 100 (shape and layout of the structural layer 113) shown in fig. 2 may enable measurement of temperature and uniaxial stress. The graphene temperature strain sensor 100 shown in fig. 6 can measure the pressure and/or pressure of the flat membrane in addition to the temperature and strain. Fig. 7 is a strain-relief graphene temperature strain sensor 100, which may include two, three, or more graphene sensors 10. A strain gage is a resistive strain gage with two or more different axial sensitive gratings that can determine the magnitude and direction of the primary strain in a planar stress field. In this embodiment, three graphene sensors 10 may be included, the strain gauge has three different axial sensitive grids, and can measure the strains and magnitudes in three directions, and compared with a unidirectional resistive grid, the strain gauge is used for measuring a unidirectional tensile force or a unidirectional pressure, so that the measurement range of the strains is expanded, and the application range of the graphene temperature strain sensor 100 is further expanded.
It can be understood that, depending on the object to be measured, the preparation method of the graphene temperature strain sensor 100 may be different, and mainly includes a separation type and an integration type. The prepared graphene temperature strain sensor 100 can be fixedly mounted on the surface of an object to be measured in a separated manner through a mechanical connection manner (screw fixation), a physical fusion manner (diffusion welding) and an adhesive manner (adhesive). In one embodiment, if the object to be measured can allow the internal structure to be changed, such as grooving or punching, the graphene temperature strain sensor 100 may also be directly embedded inside the object to be measured. If the object to be measured is liquid or gas, the graphene temperature strain sensor 100 may be directly mounted and fixed in the vicinity where the object to be measured can contact.
If the object to be detected is suitable for directly preparing the graphene temperature strain sensor 100 on the surface of the object to be detected, the sensor and the object to be detected can be directly prepared into an integrated sensor. In one embodiment, the material of the object to be measured may be 45 steel, and the specific preparation process may be as follows: firstly, polishing and cleaning the surface of an object to be detected for preparing the film sensor, and growing a layer of Cr film on the treated surface by a magnetron sputtering method, wherein the thickness of the Cr film can be 1-1000 nm. Subsequently, the bottom functional layer 112 may be grown by a chemical vapor deposition method to 1-3000 nm. The bottom functional layer 112 may be made of a multi-layer composite film, specifically, Al2O3、Si3N4、SiO2And SiC. Sequentially preparing four thin film electrodes (a first electrode 210, a second electrode 220, a third electrode 230 and a fourth electrode 240) by a magnetron sputtering method and a standard photoetching process, and simultaneously preparing the structural layer 113 by the magnetron sputtering method, the chemical vapor deposition growth and the standard photoetching process, wherein the thin film electrode material can be Au, Ag or Cu, and the structural layer 113 can be a multilayer thin filmThe structure is specifically made of two or more of Pt, NiCr, Ni, graphene, CuCr and Cu.
In one embodiment, at least one of the structural layers 113 of the first and second strained resistive gates 110 and 113 of the second strained resistive gate 120 is a multi-layer film structure, and the multi-layer film structure includes a graphene film, and since a bonding layer is required above and below the graphene film, the structural layer 113 including the graphene film is a multi-layer film structure. Specifically, there may be three cases, that is, the structural layer 113 of the first strained resistive gate 110 is a multi-layer thin film structure including a graphene thin film, and the structural layer 113 of the second strained resistive gate 120 is a non-graphene single-layer thin film structure. Second, the structure layer 113 of the first strained resistive gate 110 is a non-graphene single-layer thin film structure, and the structure layer 113 of the second strained resistive gate 120 is a multi-layer thin film structure including a graphene thin film. Third, the structural layer 113 of the first strained resistive gate 110 and the structural layer 113 of the second strained resistive gate 120 are both multilayer thin film structures including graphene thin films, but the content of graphene therein is different, that is, the thickness of the graphene thin films is different. The three conditions can ensure the functions of the first strain resistance grid 110 and the second strain resistance grid 120, that is, the normal operation of the graphene temperature strain sensor 100. The graphene film layer can be prepared by a magnetron sputtering method.
In the above embodiment, the preparation method of the structural layer 113 with a single-layer film structure may be as follows: firstly, photoresist is sprayed on the upper surface of the bottom functional layer 112, and after exposure and development through a mask, a layer of thin film is sputtered, wherein the thickness of the thin film can be 1 nm-1000 nm. Then, the photoresist is put into an ultrasonic machine filled with acetone solution to strip the residual photoresist, and a sensitive grid pattern is formed. And the structural layer 113 of the multilayer thin-film structure may perform the following steps on the basis of the above steps: sputtering a first bonding layer, then growing and photoetching a graphene film by adopting chemical vapor deposition, and finally sputtering a second bonding layer on one side far away from the first bonding layer. It is understood that the fabrication method of the sensitive gate in the structural layer 113 of the other resistive gate can be selected according to the selected multi-layer thin film structure or single-layer thin film structureThe method is carried out. It should be noted that, if the two resistance gate structure layers 113 are both of a multilayer thin film structure, the thicknesses of the graphene layers of the two resistance gate structure layers 113 may be different, so as to ensure that the temperature coefficient of resistance ratio and the strain coefficient of resistance ratio between the first strain resistance gate 110 and the second strain resistance gate 120 are different. Preparing a top functional layer 114 on the upper surface of the structural layer 113 by chemical vapor deposition, wherein the top functional layer 114 may be a multilayer thin film structure, which may be Si3N4、Al2O3、SiO2And SiC, but the top functional layer 114 is uppermost a protective layer 115 formed by a graphene modified coating. The graphene modified coating is a material of a coating in which graphene is dispersed in epoxy, polyurethane, polyaniline and the like, the coating material is uniformly sprayed on the upper surface of the top end functional layer 114 in a spin coating manner, the binding force between the graphene modified coating and the top end functional layer 114 can be increased after heat treatment, and the graphene modified coating is fixed on the top end functional layer 114. It can be understood that the arrangement of the bottom functional layer 112, the top functional layer 114 and the protective layer 115 can further improve the adaptability of the graphene temperature strain sensor 100 to a severe environment.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A graphene temperature strain sensor, comprising:
the graphene sensor (10) comprises a first strain resistance grid (110) and a second strain resistance grid (120), wherein the first strain resistance grid (110) and the second strain resistance grid (120) are identical in shape and are arranged symmetrically and alternately, and the ratio of the temperature coefficient of resistance of the first strain resistance grid (110) material to the temperature coefficient of resistance of the second strain resistance grid (120) material is not equal to the ratio of the temperature coefficient of resistance of the first strain resistance grid (110) to the strain coefficient of resistance of the second strain resistance grid (120);
a signal output circuit (20) including a first electrode (210), a second electrode (220), a third electrode (230), and a fourth electrode (240), the first strained resistive grid (110) being connected in series between the first electrode (210) and the second electrode (220), the second strained resistive grid (120) being connected in series between the third electrode (230) and the fourth electrode (240), the signal output circuit (20) being configured to output a voltage signal; and
the detection circuit (30) is electrically connected with the first electrode (210), the second electrode (220), the third electrode (230) and the fourth electrode (240) respectively and is used for detecting a first voltage at two ends of the first strain resistance grid (110) and a second voltage at two ends of the second strain resistance grid (120), calculating a first real-time resistance of the first strain resistance grid (110) according to the first voltage, calculating a second real-time resistance of the second strain resistance grid (120) according to the second voltage, and calculating the temperature and the strain of an object to be detected according to the first real-time resistance and the second real-time resistance.
2. The graphene temperature strain sensor according to claim 1, wherein the first strain resistive grid (110) comprises:
the transition layer (111) is attached to the surface of the object to be detected and used for improving the binding force between the graphene sensor (10) and the surface of the object to be detected;
the bottom end functional layer (112) covers one side, away from the surface of the object to be detected, of the transition layer (111) and is used for providing insulation protection;
the structural layer (113) covers one side, far away from the transition layer (111), of the bottom end functional layer (112) and is used for forming a graphene strain resistance grid; and
a top functional layer (114) covering a side of the structural layer (113) remote from the bottom functional layer (112) for providing insulation protection, the first electrode (210) and the second electrode (220) being exposed outside the top functional layer (114).
3. The graphene temperature strain sensor according to claim 2, wherein the pattern of the structural layer (113) is a meandering strip or a circle.
4. The graphene temperature strain sensor according to claim 2, wherein the bottom functional layer (112) and/or the top functional layer (114) is a multilayer composite thin film structure.
5. The graphene temperature strain sensor according to claim 1, wherein the detection circuit (30) comprises:
a first voltage detection circuit (310) having a first terminal connected to the first electrode (210) and a second terminal connected to the second electrode (220), for detecting the first voltage across the first stressor gate (110);
a second voltage detection circuit (320) having a first terminal connected to the third electrode (230) and a second terminal connected to the fourth electrode (240) for detecting the second voltage across the second strain resistor grid (120);
a signal amplification circuit (330), a first terminal of which is connected to the third terminal of the first voltage detection circuit (310), a second terminal of which is connected to the third terminal of the second voltage detection circuit (320), for receiving the first voltage via the first terminal, receiving the second voltage via the second terminal, and amplifying the first voltage and the second voltage, respectively; and
and the input end of the signal processing circuit (340) is connected with the third end of the signal amplifying circuit (330) and is used for receiving the amplified first voltage and the amplified second voltage, calculating the first real-time resistance of the first strain resistance grid (110) according to the first voltage, calculating the second real-time resistance of the second strain resistance grid (120) according to the second voltage, and calculating the temperature and the strain of the object to be detected according to the first real-time resistance and the second real-time resistance.
6. The graphene temperature strain sensor according to claim 5, wherein the first voltage detection circuit (310) comprises:
a wheatstone bridge branch (311) having a first terminal connected to the first electrode (210), a second terminal connected to the second electrode (220), and a third terminal forming a third terminal of the first voltage detection circuit (310);
a bridge arm resistance adjusting branch (312), a first end of which is connected with the fourth end of the wheatstone bridge branch (311), a second end of which is connected with the fifth end of the wheatstone bridge branch (311), and is used for adjusting the resistance value of the resistance of the same bridge arm in the wheatstone bridge branch (311);
and a voltage zero setting amplification branch (313), a first end of which is connected with the first electrode (210), a second end of which is connected with the second electrode (220), a third end of which is connected with the first end of the Wheatstone bridge branch (311), and a fourth end of which is connected with the third end of the bridge arm resistance adjustment branch (312), and is used for setting the voltage of the third end of the Wheatstone bridge branch (311) to zero when the resistance of the first strain resistor grid (110) changes.
7. The graphene temperature strain sensor according to claim 5, wherein the signal amplification circuit (330) comprises:
a voltage in-phase amplifying branch (331), a first end of which forms a first end of the signal amplifying circuit (330), a second end of which forms a second end of the signal amplifying circuit (330), and a third end and a fourth end of which are respectively connected with an input end of the signal processing circuit (340), and are configured to receive the first voltage through the first end and the second voltage through the second end, respectively amplify the first voltage and the second voltage, and transmit the amplified first voltage and the amplified second voltage to the signal processing circuit (340); and
and a first end of the current in-phase amplification branch (332) is connected with a third end of the voltage in-phase amplification branch (331), a second end of the current in-phase amplification branch is connected with a fourth end of the voltage in-phase amplification branch (331), and the third end and the fourth end of the current in-phase amplification branch are respectively connected with an input end of the signal processing circuit (340), and are used for receiving the first voltage through the first end and receiving the second voltage through the second end, respectively amplifying the first voltage and the second voltage, and transmitting the amplified first voltage and the amplified second voltage to the signal processing circuit (340).
8. The graphene temperature strain sensor according to claim 2, wherein the structural layer (113) is a multi-layer graphene metal composite thin film material.
9. The graphene temperature strain sensor according to claim 2, wherein the first strain resistive grid (110) further comprises:
and the protective layer (115) covers one side of the top end functional layer (114) far away from the structural layer (113) and is used for protecting the first strain resistance grid (110).
10. The graphene temperature strain sensor according to claim 9, wherein the protective layer (115) is a graphene modified coating.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113008948A (en) * | 2021-02-26 | 2021-06-22 | 中山大学 | Pressure container and defect detection method thereof |
| CN113776586A (en) * | 2021-09-04 | 2021-12-10 | 中北大学 | Thin film sensor, preparation method thereof and parameter detection method |
| CN114689198A (en) * | 2022-03-28 | 2022-07-01 | 电子科技大学 | Temperature and strain decoupling method suitable for current collector of winding secondary battery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103471497A (en) * | 2013-10-09 | 2013-12-25 | 东南大学 | Intelligent long scale distance strain sensor and manufacturing method thereof |
| CN105930006A (en) * | 2016-04-29 | 2016-09-07 | 汕头超声显示器技术有限公司 | Pressing force induction plate and pressure detection method thereof |
| CN108267076A (en) * | 2016-12-30 | 2018-07-10 | 中国空气动力研究与发展中心超高速空气动力研究所 | A kind of self-temperature compensating gage |
| CN211346684U (en) * | 2020-03-13 | 2020-08-25 | 北京石墨烯技术研究院有限公司 | Graphene temperature strain sensor |
-
2020
- 2020-03-13 CN CN202010173461.4A patent/CN111238361B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103471497A (en) * | 2013-10-09 | 2013-12-25 | 东南大学 | Intelligent long scale distance strain sensor and manufacturing method thereof |
| CN105930006A (en) * | 2016-04-29 | 2016-09-07 | 汕头超声显示器技术有限公司 | Pressing force induction plate and pressure detection method thereof |
| CN108267076A (en) * | 2016-12-30 | 2018-07-10 | 中国空气动力研究与发展中心超高速空气动力研究所 | A kind of self-temperature compensating gage |
| CN211346684U (en) * | 2020-03-13 | 2020-08-25 | 北京石墨烯技术研究院有限公司 | Graphene temperature strain sensor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113008948A (en) * | 2021-02-26 | 2021-06-22 | 中山大学 | Pressure container and defect detection method thereof |
| CN113776586A (en) * | 2021-09-04 | 2021-12-10 | 中北大学 | Thin film sensor, preparation method thereof and parameter detection method |
| CN113776586B (en) * | 2021-09-04 | 2024-03-15 | 中北大学 | Thin film sensor, preparation method thereof and parameter detection method |
| CN114689198A (en) * | 2022-03-28 | 2022-07-01 | 电子科技大学 | Temperature and strain decoupling method suitable for current collector of winding secondary battery |
| CN114689198B (en) * | 2022-03-28 | 2023-03-14 | 电子科技大学 | Temperature and strain decoupling method suitable for current collector of winding secondary battery |
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