CN116337145B - Nano-film temperature and pressure composite sensor and preparation method and application thereof - Google Patents

Nano-film temperature and pressure composite sensor and preparation method and application thereof Download PDF

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Publication number
CN116337145B
CN116337145B CN202310148739.6A CN202310148739A CN116337145B CN 116337145 B CN116337145 B CN 116337145B CN 202310148739 A CN202310148739 A CN 202310148739A CN 116337145 B CN116337145 B CN 116337145B
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temperature
layer
pressure
nano
sensitive
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CN116337145A (en
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范敏
雷卫武
徐承义
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Songnuomeng Technology Co ltd
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Songnuomeng Technology Co ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C22C19/05—Alloys based on nickel or cobalt based on nickel with chromium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06—Alloys based on chromium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C30/00—Alloys containing less than 50% by weight of each constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • G01D21/02—Measuring two or more variables by means not covered by a single other subclass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance

Abstract

The invention discloses a nano-film temperature and pressure composite sensor and a preparation method and application thereof, and relates to the technical field of sensors; the composite sensor includes: the pressure guiding nozzle is provided with a drainage channel and a temperature sensitive element mounting notch; the drainage channel is used for conveying a medium to be measured; the drainage channel is connected with the core body; the pressure-sensitive layer is arranged on the core body and is a NiCrS strain layer; the NiCrS strain layer comprises the following elements in parts by weight: 45% -55% of Ni, 45% -55% of Cr and 0.1% -3.5% of S; the pressure sensitive layer forms a strain resistance; the temperature sensitive layer forms a temperature sensitive resistor; the temperature-sensitive resistor and the temperature-sensitive element are electrically connected with a temperature signal comparison circuit; the temperature signal comparison circuit is electrically connected with a signal conditioning circuit. According to the invention, by arranging two groups of independent Wheatstone bridges, the service life of the temperature and pressure composite sensor is prolonged, and the failure rate is reduced.

Description

Nano-film temperature and pressure composite sensor and preparation method and application thereof
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a nano-film temperature and pressure composite sensor and a preparation method and application thereof.
Background
The steel-based sputtering film pressure sensor is an advanced technology in the field of pressure sensors, has the advantages of high precision, good stability, wide working temperature range, capability of measuring ultra-large range and the like, and is widely applied to multiple fields of petrochemical industry, engineering machinery, electric power and the like. During the test of the medium pressure, the temperature of the medium must be measured at the same time; in the related art, the temperature measurement is realized by sticking a temperature sensor on the surface of the pressure sensor, and the method has poor accuracy and high equipment failure rate in the process of being used for temperature measurement.
Disclosure of Invention
The present invention is directed to a nano-film composite sensor that overcomes at least one of the problems and disadvantages set forth in the background art.
The invention also provides a preparation method of the nano-film composite sensor.
The third aspect of the present invention also provides the use of the nanocomposite sensor described above.
Specifically, the first aspect of the present invention provides a nano-film temperature and pressure composite sensor, which comprises:
the pressure guiding mouth is provided with a pressure guiding mouth,
the pressure guiding nozzle is provided with a drainage channel and a temperature sensitive element mounting notch;
the drainage channel is used for conveying a medium to be measured;
the drainage channel is connected with the core body;
the temperature-sensitive element mounting notch is used for mounting the temperature-sensitive element;
the core body comprises a steel base and is provided with a plurality of grooves,
an insulating layer is arranged on the steel base;
the surface part area of the insulating layer is provided with a pressure sensitive layer;
a temperature sensitive layer is arranged in another partial area of the surface of the insulating layer;
a welding layer is arranged on the other partial area of the surface of the insulating layer;
a protective layer is arranged in the residual part area of the surface of the insulating layer;
the pressure sensitive layer is a NiCrS strain layer;
the NiCrS strain layer comprises the following elements in parts by weight:
45% -55% of Ni, 45% -55% of Cr and 0.1% -3.5% of S;
the pressure sensitive layer forms a strain resistance;
the temperature sensitive layer forms a temperature sensitive resistor;
the strain resistors form two groups of wheatstone bridges;
the temperature sensitive layer is a metal nano film;
the temperature-sensitive resistor and the temperature-sensitive element are electrically connected with a temperature signal comparison circuit;
the temperature signal comparison circuit is electrically connected with a signal conditioning circuit.
According to one of the technical schemes of the sensor, the sensor has at least the following beneficial effects:
the pressure guiding nozzle is provided with a drainage channel and a temperature sensitive element mounting notch, wherein the drainage channel is used for guiding a tested medium into a core body to measure the pressure and the temperature of the medium; meanwhile, a temperature-sensitive element is arranged in the temperature-sensitive element mounting notch and is used for measuring temperature; thereby realizing simultaneous measurement of temperature and pressure;
the invention also utilizes two groups of Wheatstone bridges to test the pressure signals, and if the two groups of Wheatstone bridges are in a working state, the final test result selects two groups of average values, thereby improving the accuracy of the pressure test; if one group of the Wheatstone bridges works abnormally, the other group of the Wheatstone bridges can also complete pressure test, so that the detection failure rate is reduced.
The temperature sensor utilizes the temperature sensitive element and the temperature sensitive resistor to measure the temperature; the temperature sensing element and temperature sensing resistor test results are processed through the temperature signal comparison circuit, so that the temperature test precision can be improved; if one component of the temperature sensitive element or the temperature sensitive resistor is abnormal, the other component can also complete the temperature test, so that the failure rate is reduced.
The invention also adds sulfur element into the NiCrS strain layer, and improves the sensitivity of the strain layer by controlling the sulfur element content.
According to some embodiments of the invention, the thickness of the metal nano film is 100 nm-500 nm.
According to some embodiments of the invention, the metal nanofilm comprises a metal platinum nanofilm.
According to some embodiments of the invention, the metallic nanofilm is composed of a Ti layer and a Pt layer.
The resistance temperature sensor is made of Ti/Pt material, has higher resistance temperature coefficient, and is stable and corrosion-resistant. Ti as an adhesive layer can effectively enhance the bonding force between substrates.
According to some embodiments of the invention, the thickness of the Ti layer is 20 nm-30 nm.
According to some embodiments of the invention, the thickness of the Pt layer is 100nm to 200nm.
According to some embodiments of the invention, the strain resistor is electrically connected to a pressure signal comparison circuit.
According to some embodiments of the invention, the NiCrS strain layer comprises the following elements in weight fraction:
45-55% of Ni, 45-55% of Cr and 2-3.5% of S.
According to some embodiments of the invention, the NiCrS strain layer consists of the following elements in weight fraction:
48-50% of Ni, 48-50% of Cr and 2-3.5% of S.
According to some embodiments of the invention, the thickness of the NiCrS strained layer is 200nm to 300nm.
According to some embodiments of the invention, the NiCrS strained layer is connected with a solder layer.
According to some embodiments of the invention, the solder layer is a gold solder layer.
According to some embodiments of the invention, the surface of the core is further provided with an insulating layer.
According to some embodiments of the invention, the insulating layer has a thickness of 3 μm to 5 μm.
According to some embodiments of the invention, the insulating layer is formed of a silicon dioxide layer and a tantalum oxide layer (Ta 2 O 5 ) Composition is prepared.
According to some embodiments of the invention, the thickness of the silicon dioxide layer in the insulating layer is 1-3 μm.
According to some embodiments of the invention, the thickness of the tantalum oxide layer in the insulating layer is 1 μm to 2 μm.
According to some embodiments of the invention, the pressure sensitive layer surface part-area is provided with a soldering layer.
According to some embodiments of the invention, the remaining part of the surface of the pressure sensitive layer is provided with a protective layer.
According to some embodiments of the invention, the temperature sensitive layer is provided with a welding layer on the surface.
According to some embodiments of the invention, the solder layer is a gold solder layer.
According to some embodiments of the invention, the protective layer is a silicon dioxide protective layer.
According to some embodiments of the invention, the thickness of the silicon dioxide protective layer is 500 nm-800 nm.
According to some embodiments of the invention, the steel base is one of a 316 stainless steel base and a 4130X steel base.
According to some embodiments of the invention, the nano-film temperature and pressure composite sensor comprises:
the shell is provided with a pressure guiding nozzle and an electrical connector;
the pressure guiding nozzle is provided with a drainage channel and a mounting notch;
the mounting notch is used for mounting the temperature-sensitive element;
the temperature-sensitive element is electrically connected with the conditioning circuit board;
the pressure guiding nozzle is provided with a steel base core body and an adapter plate mounting bracket;
the adapter plate mounting bracket is used for mounting an adapter plate.
According to some embodiments of the invention, the temperature sensitive resistor is electrically connected to the conditioning circuit board.
According to some embodiments of the invention, the strain resistor is electrically connected to the conditioning circuit board.
According to some embodiments of the invention, gold wires are welded on the welding layer.
According to some embodiments of the invention, the temperature sensitive element is a platinum resistor.
The second aspect of the invention provides a preparation method of the nano-film temperature and pressure composite sensor, which comprises the following steps:
and depositing the strain resistor and the temperature-sensitive resistor on the surface of the core body.
According to some embodiments of the present invention, the method for preparing the nano-film temperature and pressure composite sensor comprises the following steps:
s1, manufacturing a steel base, a pressure guiding nozzle, a conditioning circuit board, an adapter plate mounting bracket, a temperature sensitive element and an electrical interface;
s2, depositing an insulating layer and a variable resistance layer on the surface of the steel base;
patterning the strain resistance layer, and then depositing a temperature sensitive layer;
patterning the temperature sensitive layer, and depositing a welding layer;
patterning the welding layer and depositing a protective layer;
and finally, patterning the protective layer.
According to some embodiments of the invention, the insulating layer is deposited by ion sputtering.
According to some embodiments of the present invention, the sputtering power of the insulating layer is 150w to 200w.
According to some embodiments of the present invention, the sputtering power of the strained resistive layer is 150w to 200w.
According to some embodiments of the invention, the sputtering power of the temperature sensitive layer is 150-200 w.
According to some embodiments of the invention, the sputtering power of the welding layer is 150W-200W.
According to some embodiments of the invention, the sputtering power of the protective layer is 150W-200W.
The third aspect of the invention provides an application of the nano-film temperature and pressure composite sensor in temperature and pressure testing.
Drawings
The present invention is further described below with reference to the accompanying drawings for the convenience of understanding by those skilled in the art.
Fig. 1 is a partial cross-sectional view of a nano-film temperature and pressure composite sensor in an embodiment of the invention.
FIG. 2 is a diagram of the resistor layout on a steel-based core in an embodiment of the invention.
Fig. 3 is a schematic diagram of a film layer structure on a steel-based core in an embodiment of the invention.
Fig. 4 is a schematic diagram of a hybrid circuit structure of a nano-film temperature and pressure composite sensor according to an embodiment of the invention.
In the figure:
100. a drainage channel; 101. a pressure guiding nozzle; 102. a seal ring; 103. a temperature sensitive element; 104. a temperature measuring pipeline; 105. the adapter plate is provided with a bracket; 106. a steel-based core; 107. an adapter plate; 108. conditioning a circuit board; 109. gold wire; 110. a housing; 111. an electrical connector.
200. R1; 201. r2; 202. r3; 203. r4; 204. r5; 205. r6; 206. r7; 207. r8; 208. a steel base; 209. a temperature-sensitive resistor; 210. and (5) welding a layer.
300. A first circuit module; 301. a second circuit module; 302. a temperature signal comparison calculation circuit; 303. a pressure signal comparison calculation circuit; 304. a signal conditioning circuit.
400. An insulating layer; 401. a pressure sensitive layer; 402. a temperature sensitive layer; 403. and (3) a protective layer.
Detailed Description
The conception and the technical effects produced by the present invention will be clearly and completely described in conjunction with the embodiments below to fully understand the objects, features and effects of the present invention. It is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and that other embodiments obtained by those skilled in the art without inventive effort are within the scope of the present invention based on the embodiments of the present invention.
In the description of the present invention, the descriptions of the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
Example 1
The embodiment is a nano-film temperature and pressure composite sensor, as shown in fig. 1, including:
a housing 110, wherein the pressure guiding nozzle 101 and the electrical connector 111 are assembled on the housing 110;
the pressure guiding nozzle 101 is provided with a drainage channel 100, a mounting notch (not shown in the figure) and a temperature measuring pipeline 104;
the mounting notch is used for mounting the temperature sensitive element 103 (platinum resistor); the mounting notch is close to the medium of the drainage channel 100, so that the temperature-sensitive element 103 can respond quickly, and the temperature-sensitive element 103 is placed inside, so that the temperature-sensitive element 103 is not influenced by external force.
The temperature sensitive element 103 is electrically connected with the conditioning circuit board 108;
the pressure guiding nozzle 101 is provided with a steel base core 106 and an adapter plate mounting bracket 105;
the adapter plate mounting bracket 105 is used for mounting an adapter plate 107;
the temperature sensitive element 103 is electrically connected to the conditioning circuit board 108.
The connection end of the drainage channel and the measured medium in fig. 1 can guide the measured medium to the position of the steel base core 106 in fig. 1, and the pressure of the medium deforms the steel base core 106, so that the strain resistance layer on the steel base core 106 generates tensile deformation and compression deformation, and a millivolt signal proportional to the pressure is output. The electrical signal on the steel-based core 106 is transferred to the conditioning circuit board 108 by the gold wire 109, and the standard electrical signal is output through calculation comparison and conditioning on the conditioning circuit board 108. The temperature measurement is similar to the pressure, except that the temperature measurement does not require deformation of the substrate, but only heat is conducted to the temperature-sensitive resistor 209 and the temperature-sensitive element 103.
The resistance layout diagram of the steel-based core 106 in this embodiment is shown in fig. 2, and is composed of R1 200, R2 201, R3 202, R4 203, R5 204, R6 205, R7 206, R8 207, and temperature-sensitive resistor 209;
r1 200, R2 201, R3 202, R4 203, R5 204, R6 205, R7 206, R8 207, temperature sensitive resistor 209, and weld layer 210 are disposed on steel-based core 106.
R1 200, R2 201, R3 202, R4 203, R5 204, R6 205, R7 206, R8 207 are all strain resistors.
R1 200, R3 202, R5 204, and R7 206 form a first Wheatstone bridge;
r1 200, R3 202, R5 204, and R7 206 are disposed at a central location of steel-based core 106; tensile strain is generated when the central portion is deformed by force, and the resistance value increases.
R2 201, R4 203, R6 205, and R8 207 form a second Wheatstone bridge;
r2 201, R4 203, R6 205 and R8 207 are disposed at the edge of the diaphragm, and compressive strain is generated when the diaphragm is deformed by a force, so that the resistance value is reduced.
The schematic diagram of the film structure on the steel-based core 106 in this embodiment is shown in fig. 3, and the film structure is composed of a steel-based layer 208 (316 stainless steel), an insulating layer 400 (a silicon dioxide layer (1 μm) and a tantalum oxide layer (1 μm), the silicon dioxide layer being in contact with the steel-based layer 208), a pressure sensitive layer 401 (a NiCrS layer with a thickness of 200 nm), a temperature sensitive layer 402 (composed of a Ti layer (20 nm) and a Pt layer (100 nm), the Ti layer being in contact with the tantalum oxide layer), a protective layer 403 (a silicon dioxide layer (500 nm, where the thickness refers to the thickness on the pressure sensitive layer 401)), and a solder layer 210.
The insulating layer 400 is disposed on the surface of the steel base 208;
a pressure sensitive layer 401 is provided on a partial area of the surface of the insulating layer 400;
another partial area of the surface of the insulating layer 400 is provided with a temperature sensitive layer 402;
another partial area of the surface of the insulating layer 400 is provided with a soldering layer 210;
the remaining part of the surface of the insulating layer 400 is provided with a protective layer 403.
The pressure sensitive layer 401 is provided with a solder layer 210 in a partial area of its surface.
The remaining part of the surface of the pressure sensitive layer 401 is provided with a protective layer 403.
The surface of the temperature sensitive layer 402 is provided with a soldering layer 210.
The pressure sensitive layer 401 is a NiCrS strained layer.
The NiCrS strain layer consists of the following elements in percentage by mass:
ni 50%, cr 48% and S2%.
The solder layer 210 is a gold solder layer.
The protective layer 403 is a silicon dioxide protective layer.
The schematic diagram of the sensor hybrid circuit structure in this embodiment is shown in fig. 4, and includes:
the temperature signal comparison circuit comprises a first circuit module 300, a second power module 301, a temperature signal comparison calculation circuit 302, a pressure signal comparison circuit 303 and a signal conditioning circuit 304.
The first Wheatstone bridge and the second Wheatstone bridge are mutually independent, and after being stressed, the two groups of Wheatstone bridges can output electric signals. The two wheatstone bridges are independent and their output signals are simultaneously input to the pressure signal comparison calculation circuit 303. When the two wheatstone bridges are operating normally, their output average is calculated. Since the two bridges are located in two different areas, their measurement errors are averaged by the pressure signal comparison calculation circuit, which is advantageous for improved pressure measurement accuracy. When one of the two wheatstone bridges cannot work normally, the pressure signal comparison and calculation circuit 303 only calculates the output value of the normal bridge, and ensures the normal work of the product. Thus, the service life of the temperature and pressure compound sensor is prolonged, and the failure rate is reduced.
In this embodiment, the number of temperature-sensitive resistors 209 is two; and the temperature sensitive resistors 209 are symmetrically arranged. The temperature-sensitive resistor 209 and the temperature-sensitive element 103 can independently test the temperature and output signals; and the output signal is input to the temperature signal comparison circuit 302 and finally passed through the signal conditioning circuit 304 for output.
As shown in fig. 4, the platinum resistor RT3 and the temperature sensitive resistors RT1 and RT2 on the steel cup can be compared, and the platinum resistor RT3 and the temperature sensitive resistors RT2 are used as backups to ensure measurement accuracy and reliability.
The strain resistance is electrically connected to conditioning circuit board 108.
Gold wires are soldered to the soldering layer 210.
The temperature sensitive element 103 is a platinum resistor.
The preparation method of the nano-film temperature and pressure composite sensor in the embodiment comprises the following steps:
s1, manufacturing a steel base, a pressure guiding nozzle, a conditioning circuit board, an adapter plate mounting bracket, a temperature sensitive element and an electrical interface;
s2, depositing an insulating layer and a variable resistance layer on the surface of the steel base;
patterning the strain resistance layer, and then depositing a temperature sensitive layer;
patterning the temperature sensitive layer, and depositing a welding layer;
patterning the welding layer and depositing a protective layer;
finally, patterning the protective layer;
ion sputtering (sputtering power 150W) was used for the deposition in this step.
Example 2
The difference between the nano-film temperature and pressure composite sensor and the embodiment 1 is that: the steel-based core of this example consisted of a steel base (316 stainless steel), an insulating layer (silica layer (1 μm) and tantalum oxide layer (1 μm), the silica layer being in contact with the steel base), a pressure sensitive layer (NiCrS layer, thickness 200 nm), a temperature sensitive layer (Pt layer), a protective layer (silica layer (500 nm, thickness here means thickness on the pressure sensitive layer)), and a weld layer.
The insulating layer is arranged on the surface of the steel base;
the partial area of the surface of the insulating layer is provided with a pressure sensitive layer;
a temperature sensitive layer is arranged in another partial area of the surface of the insulating layer;
a welding layer is arranged on the other partial area of the surface of the insulating layer;
the remaining part of the surface of the insulating layer is provided with a protective layer.
The partial area of the surface of the pressure sensitive layer is provided with a welding layer.
The remaining part of the surface of the pressure sensitive layer is provided with a protective layer.
The surface of the temperature sensitive layer is provided with a welding layer.
The pressure sensitive layer is a NiCrS strain layer.
The NiCrS strain layer consists of the following elements in percentage by mass:
ni 50%, cr 48% and S2%.
The welding layer is a gold welding layer.
The protective layer is a silicon dioxide protective layer.
Example 3
The difference between the nano-film temperature and pressure composite sensor and the embodiment 1 is that:
the difference between the nano-film temperature and pressure composite sensor and the embodiment 1 is that: the steel-based core of this example consisted of a steel base (316 stainless steel), an insulating layer (silicon dioxide layer (2 μm)), a pressure sensitive layer (NiCrS layer, thickness 200 nm), a temperature sensitive layer (Pt layer), a protective layer (silicon dioxide layer (500 nm, here thickness refers to thickness on the pressure sensitive layer)), and a weld layer.
The insulating layer is arranged on the surface of the steel base;
the partial area of the surface of the insulating layer is provided with a pressure sensitive layer;
a temperature sensitive layer is arranged in another partial area of the surface of the insulating layer;
a welding layer is arranged on the other partial area of the surface of the insulating layer;
the remaining part of the surface of the insulating layer is provided with a protective layer.
The partial area of the surface of the pressure sensitive layer is provided with a welding layer.
The remaining part of the surface of the pressure sensitive layer is provided with a protective layer.
The surface of the temperature sensitive layer is provided with a welding layer.
The pressure sensitive layer is a NiCrS strain layer.
The NiCrS strain layer consists of the following elements in percentage by mass:
ni 50%, cr 48% and S2%.
The welding layer is a gold welding layer.
The protective layer is a silicon dioxide protective layer.
Comparative example 1
The comparative example is a nano-film temperature and pressure composite sensor, and the difference with the embodiment 1 is that:
this comparative example replaces the NiCrS strained layer of example 1 with a NiCr strained layer;
the NiCr pressure-sensitive layer consists of the following elements in percentage by mass:
ni 50% and Cr 50%.
Comparative example 2
The comparative example is a nano-film temperature and pressure composite sensor, and the difference with the embodiment 1 is that:
the NiCrS strain layer in the comparative example consists of the following elements in percentage by mass:
50% of Ni, 46% of Cr and 4% of S.
The performance test method of the nano-film temperature and pressure composite sensor prepared in the embodiments 1-3 and the comparative examples 1-2 is as follows: the JJG 882-2019 pressure transmitter certification protocol performs a transmission certification. The temperature test results are shown in Table 1, and the pressure test results are shown in Table 2.
TABLE 1 temperature test results of nano-film temperature and pressure composite sensors prepared in examples 1-3 and comparative examples 1-2 of the present invention
TABLE 2 pressure test results of nano-film temperature and pressure composite sensors prepared in examples 1-3 and comparative examples 1-2 of the present invention
In summary, the pressure tap of the invention is provided with the drainage channel and the temperature-sensitive element mounting notch, wherein the drainage channel is used for guiding the tested medium into the core body to measure the pressure and the temperature of the medium; meanwhile, a temperature-sensitive element is arranged in the temperature-sensitive element mounting notch and is used for measuring temperature; thereby realizing simultaneous measurement of temperature and pressure; the invention also utilizes two groups of Wheatstone bridges to test the pressure signals, and if the two groups of Wheatstone bridges are in a working state, the final test result selects two groups of average values, thereby improving the accuracy of the pressure test; if one group of the Wheatstone bridges works abnormally, the other group of the Wheatstone bridges can also complete pressure test, so that the detection failure rate is reduced. The temperature sensor utilizes the temperature sensitive element and the temperature sensitive resistor to measure the temperature; the temperature sensing element and temperature sensing resistor test results are processed through the temperature signal comparison circuit, so that the temperature test precision can be improved; if one component of the temperature sensitive element or the temperature sensitive resistor is abnormal, the other component can also complete the temperature test, so that the failure rate is reduced.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.

Claims (10)

1. A nano-film temperature and pressure composite sensor, comprising:
the pressure guiding mouth is provided with a pressure guiding mouth,
the pressure guiding nozzle is provided with a drainage channel and a temperature sensitive element mounting notch;
the drainage channel is used for conveying a medium to be measured;
the drainage channel is connected with the core body;
the temperature-sensitive element mounting notch is used for mounting the temperature-sensitive element;
the core body comprises a steel base and is provided with a plurality of grooves,
an insulating layer is arranged on the steel base;
the surface part area of the insulating layer is provided with a pressure sensitive layer;
a temperature sensitive layer is arranged in another partial area of the surface of the insulating layer;
a welding layer is arranged on the other partial area of the surface of the insulating layer;
a protective layer is arranged in the residual part area of the surface of the insulating layer;
the pressure sensitive layer is a NiCrS strain layer;
the NiCrS strain layer consists of the following elements in parts by weight:
48% -50% of Ni, 48% -50% of Cr and 2% -3.5% of S;
the pressure sensitive layer forms a strain resistance;
the temperature sensitive layer forms a temperature sensitive resistor;
the strain resistors form two groups of wheatstone bridges;
the temperature sensitive layer is a metal nano film;
the temperature-sensitive resistor and the temperature-sensitive element are electrically connected with a temperature signal comparison circuit;
the temperature signal comparison circuit is electrically connected with a signal conditioning circuit.
2. The nano-film temperature and pressure composite sensor according to claim 1, wherein the thickness of the metal nano-film is 100 nm-500 nm.
3. The nano-film temperature and pressure composite sensor according to claim 1, wherein the metal nano-film comprises a metal platinum nano-film.
4. The nano-film temperature and pressure composite sensor according to claim 1, wherein the metal nano-film is composed of a Ti layer and a Pt layer.
5. The nano-film temperature and pressure composite sensor according to claim 1, wherein the strain resistor is electrically connected with a pressure signal comparison circuit.
6. The nano-film temperature and pressure composite sensor according to claim 1, wherein the thickness of the NiCrS strain layer is 200 nm-300 nm.
7. The nano-film temperature and pressure composite sensor according to claim 1, wherein the NiCrS strain layer is connected with a welding layer.
8. The nano-film temperature and pressure composite sensor according to claim 1, wherein an insulating layer is further arranged on the surface of the core body.
9. A method of manufacturing a nano-film temperature and pressure composite sensor according to any one of claims 1 to 8, comprising the steps of:
and depositing the strain resistor and the temperature-sensitive resistor on the surface of the core body.
10. Use of a nano-film temperature and pressure composite sensor according to any one of claims 1 to 8 in temperature and pressure measurements.
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