CN103512698A - Capacitance type absolute pressure sensor and manufacturing method thereof - Google Patents
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Abstract
Provided is a capacitance type absolute pressure sensor and a manufacturing method thereof. The capacitance type absolute pressure sensor is characterized in that a silicon movable polar plate is formed by conducting thermal oxidation, anisotropic corrosion, photoetching and metal layer sputtering on a silicon wafer; a glass-silicon composite polar plate is formed by conducting thermal oxidation, anisotropic corrosion, photoetching, metal layer sputtering and static sealing-in on a monocrystal silicon material and a glass layer; finally static sealing-in is conducted on the glass-silicon composite polar plate and the silicon movable polar plate, and the capacitance type absolute pressure sensor is formed. According to a structure of the capacitance type absolute pressure sensor, an electrode is led out by utilizing a silicon material body, the electrode does not need to penetrate through a sealed bonding face, gas tightness connection of a capacitance vacuum cavity is effectively ensured, and long-term stable work of the sensor is ensured. A core part is achieved by adopting a silicon-glass-silicon structure, the influence caused by silicon-glass material difference is effectively reduced, and temperature excursion of the sensor is reduced. The Capacitance type absolute pressure sensor further has the advantages of being reasonable in structure, safe, reliable, wide in application range, high in measurement precision and the like.
Description
Technical field
The invention belongs to sensor technical field, specifically a kind of capacitor type absolute pressure sensor and manufacture method thereof of utilizing single crystal silicon material, utilizing microelectronics and micromachined integration technology to make.
Background technology
Silicon capacitive pressure transducer is a kind of novel structural type pressure transducer, its core Sensitive Apparatus adopts single crystal silicon material, utilize microelectronics and micromachined integration technology to make, intrinsic advantage due to the elastomeric material of silicon materials, silicon capacitive transducer is compared with metal capacitance sensor in the past, at aspects such as measuring accuracy, stability, all there is more significantly advantage.The core Sensitive Apparatus of silicon capacitive transducer is converted to corresponding capacitance variations additional atmospheric pressure signal, and testing circuit is converted to the variation of electric capacity the electric signal needing, and this electric signal is processed to the output signal that just can meet with a response.As the core pressure detecting part of intelligent pressure transmitter, can in a plurality of measurements, be applied.
Traditional pressure transducer is normally mechanical, and volume is larger comparatively speaking, like this to integrated and microminiaturized have a lot of unfavorable.If after using MEMS technology, above said shortcoming just can be solved, and can make its performance become more good, can also make cost reduce widely.Used now the pressure transducer of being used widely after MEMS technology to be generally divided into condenser type and pressure resistance type two classes.The temperature of capacitance pressure transducer, is floated smaller, and precision is fine, but its linearity is poor, and is easy to be subject to the relevant impact of stray capacitance.And piezoresistive pressure sensor is compared with it, temperature float just larger, precision is lower and comparison of coherence is poor, but its linearity is but good.Along with the development of electronic technology, application circuit is very easy to realize to the linear compensation of capacitive transducer, and capacitive pressure transducer, owing to having the advantage that precision is high, has good advantage aspect high performance pressure survey.
Silicon capacitive pressure transducer core component is that the differential capacitive structure being formed by glass-silicon-glass is realized at present, in the situation that not considering outer enclosure structure, because glass and silicon are foreign material, its characteristic there are differences, cause the characteristic of the final detection part forming to be subject to the impact of temperature, static pressure, cause the output signal of sensor to there is larger temperature drift and static pressure error.
Capacitive pressure transducer application has: forecast, space flight and aviation of the monitoring of industrial process detection, environment, meteorology etc., in these fields, its application is very widely.Be divided into differential (differential pressure, gauge pressure), absolute pressure formula.Under some measurement environment, when measuring atmospheric pressure, cannot use differential pressure pickup, be the absolute pressure under relative vacuum state because tested, due to differential pressure pickup be measure at 2 between the measuring unit of pressure reduction, can not measure absolute pressure.Its structural design of absolute pressure type sensor and technique realize aspect larger difference.
For capacitor type absolute pressure sensor, its measurement electric capacity is generally in vacuum chamber, and its sensitization capacitance electrode must be drawn out to outside chamber, to realize capacitance detecting.Some adopt its both inner pad derivation line of absolute pressure sensor of si-glass structure to be connected with outer electrode through bonding face, bonding face impermeability is difficult for effectively guaranteeing, can cause micro-leakage sensor to occur output shift, cause sensor to work for a long time.For guaranteeing that sensor works for a long time when using for a long time, need a kind of structure that can keep for a long time vacuum seal state.
Summary of the invention
The object of this invention is to provide a kind of capacitor type absolute pressure sensor and manufacture method thereof of utilizing single crystal silicon material, utilizing microelectronics and micromachined integration technology to make.
The object of the present invention is achieved like this: it includes glass-silicon compound polar plate and silicon can movable plate electrode, it is characterized in that: at silicon, can under movable plate electrode, fix glass-silicon compound polar plate, described silicon can movable plate electrode be that the central island partial fixing in the silicon wafer layer both sides of polishing both surfaces has silicon oxide layer, the side of silicon wafer layer one end is fixed with metal level, and the thickness of this silicon wafer layer is 380 ~ 420 microns; Described glass-silicon compound polar plate is that glassy layer is fixed on single crystal silicon material layer top, and glassy layer center is with through hole, on the silicon chip corresponding with through hole on glassy layer, is fixed with metal level, above this metal level, is fixed with electrode layer; In described single crystal silicon material Ceng Shang one end, be fixed with equally metal conducting layer.
The method for making of above-mentioned capacitor type absolute pressure sensor is as follows: glass-silicon compound polar plate manufacture method is wherein:
First single crystal silicon material is carried out to thermal oxide, then the single crystal silicon material after thermal oxide is carried out to photoetching, formation is with the oxidation screened film of perforate, carry out single crystal silicon material integral body to carry out anisotropic corrosion, 5 microns of corrosion thickness, remove oxidation screened film again, and erode away slot electrode at position of opening, a side splash-proofing sputtering metal layer at single crystal silicon material with slot electrode, removes excess metal alloy to metal level photoetching, makes electrode; At glassy layer, with respect to the electrode position of single crystal silicon material, make through hole, after through hole and electrode concentric locating fixing, single crystal silicon material and glassy layer are carried out to electrostatic sealing-in; Glass-silicon pole plate upper glass layer surface sputtering metal level after sealing-in, finally carries out photoetching, the electrode layer that reservation through hole is formed by metal and the metal level in slot electrode;
Silicon can movable plate electrode manufacture method be: the twin polishing silicon wafer layer that is 380 ~ 420 microns to thickness carries out thermal oxide, silicon wafer layer after oxidation is carried out photoetching, removed photoresist, the oxide film that retains central island place during photoetching, for silicon wafer layer, carry out anisotropic corrosion, at central island edge corrosion, go out depression, form capacitance gap, again silicon wafer layer is carried out to thermal oxide photoetching, the oxide film that still retains central island place, carries out anisotropic corrosion again, eliminates the oxide layer at silicon wafer layer two ends; The upper surface of silicon chip one end is carried out to localized metallic sputter, and the metal level producing after sputter is carried out to photoetching, make electrode.
Finally, glass-silicon compound polar plate and silicon can movable plate electrode be carried out under vacuum environment electrostatic sealing-in and carries out scribing and make finished product, during sealing-in, silicon can movable plate electrode connects the positive electrode of sealing apparatus, and the glassy layer of glass-silicon compound polar plate connects negative electrode, sealing-in voltage 500～1200V.
Described metal level is the aluminum layer that density and silicon chip are close.
The thickness of described glassy layer is 200 ~ 800 microns.
Tool of the present invention has the following advantages:
The present invention is directed to the core component of existing silicon capacitive transducer, proposed a kind of new design implementation.The fixed polar plate that is electric capacity is used electrostatic sealing-in technique that glass is coupled together silicon materials, do not need silicon-silicon bond to close technique necessary high temperature bonding stove, super-clean environment, process conditions are relatively simple, directly compatible with existing technique, particularly can adjust the thickness of flass, between key-course, within the specific limits, by adjusting the thickness of glassy layer, the silicon capacitive transducer performance that technical scheme of the present invention realizes has realized the effect of approximate silicon-silicon scheme to stray capacitance.
In scheme, glass-silicon composite solid fixed plate, single crystal silicon material thickness is 1～1.5 millimeter, mainly plays capacitance electrode and draws outward and impermeability sealing function, 200 microns～800 microns of glassy layers, silicon materials are 100 crystal faces, position line Yan110 crystal orientation.Glass and silicon materials surface reach the requirement of electrostatic sealing-in by glossing.Silicon and glass form Leakless sealing by electrostatic sealing-in technique.Absolute pressure encapsulating structure provided by the invention utilizes silicon materials body that electrode is drawn, and does not need the bonding face through sealing, has effectively guaranteed that electric capacity vacuum chamber impermeability connects, and guarantees the work that sensor can be steady in a long-term.
That the present invention also has is rational in infrastructure, safe and reliable, range of application is wide, measuring accuracy advantages of higher.
Accompanying drawing explanation
Fig. 1 is structural representation sketch of the present invention;
Fig. 2 is the glass-silicon compound polar plate manufacturing process flow sketch in Fig. 1;
Fig. 3 is that silicon in Fig. 1 can movable plate electrode manufacturing process flow sketch;
Fig. 4 is not scribing status architecture schematic diagram of the present invention.
Below in conjunction with accompanying drawing, by example, the present invention is described in further detail, but following example is only the present invention's example wherein, do not represent the rights protection scope that the present invention limits, the scope of the present invention is as the criterion with claims.
Embodiment
As shown in Figure 1, at silicon, can under movable plate electrode, fix glass-silicon compound polar plate, described silicon can movable plate electrode be that the central island partial fixing in silicon wafer layer 1 both sides of polishing both surfaces has silicon oxide layer 2, one end side surface of silicon wafer layer 1 is fixed with metal conducting layer 3, and the thickness of this silicon wafer layer is 380 ~ 420 microns; Described glass-silicon compound polar plate is that glassy layer 4 is fixed on single crystal silicon material layer 5 top, and glassy layer center is with through hole 6, on the silicon chip corresponding with through hole on glassy layer, is fixed with metal level 8, is fixed with electrode layer 7 above this metal level; In described single crystal silicon material Ceng Shang one end, be fixed with equally metal conducting layer 3.
Referring to Fig. 2 ~ 4, the method for making of above-mentioned capacitor type absolute pressure sensor is as follows: wherein glass-silicon compound polar plate manufacture method is:
First single crystal silicon material is carried out to thermal oxide, then the single crystal silicon material after thermal oxide is carried out to photoetching, formation is with the oxidation screened film of perforate, carry out single crystal silicon material integral body to carry out anisotropic corrosion, 5 microns of corrosion thickness, remove oxidation screened film again, and erode away slot electrode at position of opening, a side splash-proofing sputtering metal layer at single crystal silicon material with slot electrode, removes excess metal alloy to metal level photoetching, makes electrode; At glassy layer, with respect to the electrode position of single crystal silicon material, make through hole, after through hole and electrode concentric locating fixing, single crystal silicon material and glassy layer are carried out to electrostatic sealing-in; Glass-silicon pole plate upper glass layer surface sputtering metal level after sealing-in, finally carries out photoetching, the electrode layer that reservation through hole is formed by metal and the metal level in slot electrode;
Silicon can movable plate electrode manufacture method be: the twin polishing silicon wafer layer that is 380 ~ 420 microns to thickness carries out thermal oxide, silicon wafer layer after oxidation is carried out photoetching, removed photoresist, the oxide film that retains central island place during photoetching, for silicon wafer layer, carry out anisotropic corrosion, at central island edge corrosion, go out depression, form capacitance gap, again silicon wafer layer is carried out to thermal oxide photoetching, the oxide film that still retains central island place, carries out anisotropic corrosion again, eliminates the oxide layer at silicon wafer layer two ends; The upper surface of silicon chip one end is carried out to localized metallic sputter, and the metal level producing after sputter is carried out to photoetching, make electrode.
Finally, glass-silicon compound polar plate and silicon can be carried out electrostatic sealing-in and carry out scribing and make finished product by movable plate electrode, during sealing-in, silicon can movable plate electrode connects the positive electrode of sealing apparatus, and the glassy layer of glass-silicon compound polar plate connects negative electrode, sealing-in voltage 700～800V.Silicon layer thickness is 1～1.5 millimeter.
Described metal level is the aluminum layer that density and silicon chip are close.
The thickness of described glassy layer is 200 ~ 350 microns.
Use thermal oxidation process to process silicon on a large scale, can in the situation that meeting performance requirement, enhance productivity.
During use, pressure compression silicon can movable plate electrode, electric capacity is changed send electric signal, the electrode that electric signal can movable plate electrode one end by silicon and the electrodes transfer on glass-silicon compound polar plate.Electric signal is by the electrode in the motor slot of glass-silicon compound polar plate on the electrode outside silicon chip conducts to encapsulation region.
As shown in Figure 1, at silicon, can under movable plate electrode, fix glass-silicon compound polar plate, described silicon can movable plate electrode be that the central island partial fixing in the silicon wafer layer both sides of polishing both surfaces has silicon oxide layer, and the side of silicon wafer layer one end is fixed with metal level, and the thickness of this silicon wafer layer is 380 ~ 420 microns; Described glass-silicon compound polar plate is that glassy layer is fixed on single crystal silicon material layer top, glassy layer center is with through hole, at silicon chip, with respect to lead to the hole site and one end of glassy layer, be fixed with metal level, above the lead to the hole site metal level at silicon chip with respect to glassy layer, be fixed with electrode layer.
Referring to Fig. 2 ~ 4, the method for making of above-mentioned capacitor type absolute pressure sensor is as follows: wherein the manufacture method of glass-silicon compound polar plate is:
First single crystal silicon material is carried out to thermal oxide, then the single crystal silicon material after thermal oxide is carried out to photoetching, formation is with the oxidation screened film of perforate, carry out single crystal silicon material integral body to carry out anisotropic corrosion, 5 microns of corrosion thickness, remove oxidation screened film again, and erode away slot electrode at position of opening, a side splash-proofing sputtering metal layer at single crystal silicon material with slot electrode, removes excess metal alloy to metal level photoetching, makes electrode; At glassy layer, with respect to the electrode position of single crystal silicon material, make through hole, after through hole and electrode concentric locating fixing, single crystal silicon material and glassy layer are carried out to electrostatic sealing-in; Glass-silicon pole plate upper glass layer surface sputtering metal level after sealing-in, finally carries out photoetching, the electrode layer that reservation through hole is formed by metal and the metal level in slot electrode;
Silicon can movable plate electrode manufacture method be: the twin polishing silicon wafer layer that is 380 ~ 420 microns to thickness carries out thermal oxide, silicon wafer layer after oxidation is carried out photoetching, removed photoresist, the oxide film that retains central island place during photoetching, for silicon wafer layer, carry out anisotropic corrosion, at central island edge corrosion, go out depression, form capacitance gap, again silicon wafer layer is carried out to thermal oxide photoetching, the oxide film that still retains central island place, carries out anisotropic corrosion again, eliminates the oxide layer at silicon wafer layer two ends; The upper surface of silicon chip one end is carried out to localized metallic sputter, and the metal level producing after sputter is carried out to photoetching, make electrode.
Finally, glass-silicon compound polar plate and silicon can be carried out electrostatic sealing-in and carry out scribing and make finished product by movable plate electrode, during sealing-in, silicon can movable plate electrode connects the positive electrode of sealing apparatus, and the glassy layer of glass-silicon compound polar plate connects negative electrode, sealing-in voltage 800～1200V.
Described metal level is the aluminum layer that density and silicon chip are close.
The thickness of described glassy layer is 650 ~ 800 microns.
During use, pressure compression silicon can movable plate electrode, electric capacity is changed send electric signal, the electrode that electric signal can movable plate electrode one end by silicon and the electrodes transfer on glass-silicon compound polar plate.Electric signal is by the electrode in the motor slot of glass-silicon compound polar plate on the electrode outside silicon chip conducts to encapsulation region.Silicon layer thickness is 1～1.5 millimeter.
Claims (6)
1. a capacitor type absolute pressure sensor, it includes glass-silicon compound polar plate and silicon can movable plate electrode, it is characterized in that: at silicon, can under movable plate electrode, fix a glass-silicon compound polar plate, described silicon can movable plate electrode be that the central island partial fixing in the silicon wafer layer both sides of polishing both surfaces has silicon oxide layer, the side of silicon wafer layer one end is fixed with metal conducting layer, and the thickness of this silicon wafer layer is 380 ~ 420 microns; Described glass-silicon compound polar plate is that glassy layer is fixed on single crystal silicon material layer top, and glassy layer center is with through hole, on the silicon chip corresponding with through hole on glassy layer, is fixed with metal level, above this metal level, is fixed with electrode layer; In described single crystal silicon material Ceng Shang one end, be fixed with equally metal conducting layer.
2. capacitor type absolute pressure sensor according to claim 1, is characterized in that: described metal level is the aluminum layer that density and silicon are close.
3. capacitor type absolute pressure sensor according to claim 1, is characterized in that: the thickness of described glassy layer is 200 ~ 800 microns.
4. a manufacture method for capacitor type absolute pressure sensor, it comprises: glass-silicon compound polar plate and silicon can movable plate electrodes, it is characterized in that: glass-silicon compound polar plate manufacture method is:
First single crystal silicon material is carried out to thermal oxide, then the single crystal silicon material after thermal oxide is carried out to photoetching, formation is with the oxidation screened film of perforate, carry out single crystal silicon material integral body to carry out anisotropic corrosion, 5 microns of corrosion thickness, remove oxidation screened film again, and erode away slot electrode at position of opening, a side splash-proofing sputtering metal layer at single crystal silicon material with slot electrode, removes excess metal alloy to metal level photoetching, makes electrode; At glassy layer, with respect to the electrode position of single crystal silicon material, make through hole, after through hole and electrode concentric locating fixing, single crystal silicon material and glassy layer are carried out to electrostatic sealing-in; Glass-silicon pole plate upper glass layer surface sputtering metal level after sealing-in, finally carries out photoetching, the electrode layer that reservation through hole is formed by metal and the metal level in slot electrode;
Silicon can movable plate electrode manufacture method be: the twin polishing silicon wafer layer that is 380 ~ 420 microns to thickness carries out thermal oxide, silicon wafer layer after oxidation is carried out photoetching, removed photoresist, the oxide film that retains central island place during photoetching, for silicon wafer layer, carry out anisotropic corrosion, at central island edge corrosion, go out depression, form capacitance gap, again silicon wafer layer is carried out to thermal oxide photoetching, the oxide film that still retains central island place, carries out anisotropic corrosion again, eliminates the oxide layer at silicon wafer layer two ends; The upper surface of silicon chip one end is carried out to localized metallic sputter, and the metal level producing after sputter is carried out to photoetching, make electrode;
Finally, glass-silicon compound polar plate and silicon can be carried out electrostatic sealing-in and carry out scribing and make finished product by movable plate electrode, during sealing-in, silicon can movable plate electrode connects the positive electrode of sealing apparatus, and the glassy layer of glass-silicon compound polar plate connects negative electrode, sealing-in voltage 500～1200V.
5. capacitor type absolute pressure sensor according to claim 4, is characterized in that: described metal level is the aluminum layer that density and silicon chip are close.
6. capacitor type absolute pressure sensor according to claim 4, is characterized in that: the thickness of described glassy layer is 200 ~ 800 microns.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104045055A (en) * | 2014-06-18 | 2014-09-17 | 上海先进半导体制造股份有限公司 | Manufacturing method of cover plate |
| CN104677528A (en) * | 2015-03-13 | 2015-06-03 | 中国电子科技集团公司第二十四研究所 | Capacitive pressure sensor and preparation method thereof |
| CN106644247A (en) * | 2015-11-02 | 2017-05-10 | 李美燕 | Pressure sensor with composite cavity and manufacturing method thereof |
| CN106679854A (en) * | 2016-11-29 | 2017-05-17 | 中国电子科技集团公司第四十八研究所 | Absolute-pressure pressure sensor and preparation method thereof |
| CN110954260A (en) * | 2019-11-27 | 2020-04-03 | 同济大学 | Gasket type pressure sensor for detecting bolt pretightening force |
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| CN110954260A (en) * | 2019-11-27 | 2020-04-03 | 同济大学 | Gasket type pressure sensor for detecting bolt pretightening force |
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Application publication date: 20140115 |