CN100371696C - Piezoresistance type high-frequency dynamic high voltage sensing device - Google Patents
Piezoresistance type high-frequency dynamic high voltage sensing device Download PDFInfo
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- CN100371696C CN100371696C CNB2005100379822A CN200510037982A CN100371696C CN 100371696 C CN100371696 C CN 100371696C CN B2005100379822 A CNB2005100379822 A CN B2005100379822A CN 200510037982 A CN200510037982 A CN 200510037982A CN 100371696 C CN100371696 C CN 100371696C
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Abstract
The present invention relates to a piezoresistance type high-frequency dynamic high voltage sensing device which is composed of a piezoresistance sensitive component, a sensor base, a transfer circuit and a leading out cable, wherein the piezoresistance sensitive component is composed of a silicon piezoresistance sensitive element and a glass ring piece. The sensitive element is provided with a circular level silicon member piece of a force sensing area; two sides of the circular level silicon member piece are covered with a SiO2 layer and a Si3N4 layer; the front side of the force sensing area is provided with a Wheatstone bridge and leads out electrodes; silicon chips which are exposed to the front side of the force sensing area are welded on the surface of the glass ring piece; the electrodes are welded with inner gold wires; the other side of the glass ring piece is attached to the surface of an annular pit of a pressure entrance end of a sensor base; the back side of the silicon chips is aligned to the pressure entrance end surface of the sensor base; the other end of the inner gold wires is welded with the transfer circuit in a cavity of the sensor; a core wire of the leading out cable is welded with the transfer circuit. The tail part of the sensor base which is fixed in a screw way is used for tube caps of the packed sensor; the leading out cable is led out from a bottom hole of the tube caps of the sensor and fixed to the tube cap of the sensor based on a wire pressing cap; an HF amplifying circuit is connected between the transfer circuit and the leading out cable, and the high frequency amplification of signal transmission is realized.
Description
Technical field
The present invention relates to a kind of piezoresistance type high-frequency dynamic high voltage sensing, be particularly related to a kind of high frequency dynamic piezoresistance, pressure sensor, be specially adapted to the dynamic pressure measurement of chemical detonation test, gongwu test, aerodynamics test (being commonly called as wind tunnel test), hydraulic engineering, Aero-Space, weapons test, boats and ships etc. based on MEMS (Micro Electro Mechanical System) silicon body micromachining technology.
Technical background
The making that the silicon body micromachining technology of MEMS (Micro Electro Mechanical System) technology is used for piezoresistive pressure sensor starts from the later stage seventies 20th century, utilize the piezoresistive effect of silicon, with planar integrated circuit technology certain crystal orientation on silicon chip, the strain detecting voltage dependent resistor (VDR) that certain position is made into methods such as oxide-diffused or ion implantation doping, photoetching, and interconnection constitutes test Hui Sidun strain bridge.With silicon 3 D processing technologys such as the isotropy of double-sided alignment photoetching, silicon and different in nature burn into electrostatic bondings, the power sensitive film structure that silicon substrate is made into periphery fixed is to replace traditional mechanical lapping processing and sintering processing silicon cup technology.The silicon piezoresistive pressure sensor that the above-mentioned silicon body of this usefulness micromachined technology is made has the advantage of silicon piezoresistive pressure sensor high range, high natural frequency.
Kulite company and Endevco company have adopted the C type plane film force sensing structure of body micromachined; But they all do not have to solve the problem of its flat encapsulation fully.
When being used for the dynamic high-pressure measurement, generally require sensor that high Dynamic response and minimum rise time are arranged, for this reason, the encapsulation of sensor can not form tube chamber, even it is also bad that standard flushes packaging effect, must solve presser sensor diaphragm stress surface and directly flush encapsulation.
Summary of the invention
In order to address the above problem, the invention provides a kind of based on the MEMS technology can be used for the pressure dynamic test have high dynamic response frequency, inferior μ S of anti-interference, rise time level, high range, a high frequency dynamic piezo-resistance high pressure sensor that dynamic property is good by force.
Technical scheme of the present invention is to constitute like this:
A kind of piezoresistance type high-frequency dynamic high voltage sensing is made up of piezoresistance sensitivity assembly, sensor base, built-up circuit and outgoing cable,
1) this piezoresistance sensitivity assembly is made up of silicon piezoresistance sensitivity element and glass ring plate, and this silicon piezoresistance sensitivity element is the flat silicon diaphragm of circle with the quick district of circular power, and the flat silicon diaphragm of this circle two sides is coated with SiO successively
2Layer and Si
3N
4Layer, there is Hui Sidun strain full-bridge in front, the quick district of this power and draws resistance electrode, the quick district of this power front periphery exposes silicon, and be welded in polishing Pyrex or GG-17 glass ring plate, form this piezoresistance sensitivity assembly, the resistance electrode in the glass endoporus welds the spun gold internal lead with extraordinary gold wire bonder;
2) the glass ring plate another side of this piezoresistance sensitivity assembly sticks on the belt pit face that this sensor base entrance pressure port is provided with, realize the circle flat silicon diaphragm back side of this piezoresistance sensitivity assembly and the end face encapsulation of this sensor base entrance pressure port, pressure is directly experienced at the flat silicon diaphragm of the circle of this piezoresistance sensitivity assembly back side, this spun gold internal lead other end is welded to this built-up circuit, the heart yearn of this outgoing cable is welded in this built-up circuit, realizes this spun gold internal lead and corresponding heart yearn conducting;
3) afterbody of this sensor base is rotated with the sensor pipe cap that is used to encapsulate this sensor, and this outgoing cable is drawn by this sensor pipe cap bottom ports, and is fixed in this sensor pipe cap based on Wire crimping cap.
As a further improvement on the present invention, the flat silicon diaphragm of this circle adopts the silicon single crystal of high Young's modulus of elasticity, and should justify flat silicon diaphragm thickness corresponding to this cell pressure range 0～1MPa-100MPa is 0.2-0.9mm.
As a further improvement on the present invention, the resistance of this Hui Sidun strain full-bridge has the following resistance of 1K Ω.
As a further improvement on the present invention, this built-up circuit is the interior PCB card extender of cavity that is fixed in this sensor base.
As a further improvement on the present invention, be connected to the high frequency bandwidth amplifying circuit (20) of integrated encapsulation between this built-up circuit and this outgoing cable, realize that the transmission signals high frequency amplifies, this high frequency bandwidth amplifying circuit had up to the bandwidth of 100KHz and the rise time of 1 μ S.
As a further improvement on the present invention, this high frequency bandwidth amplifying circuit is made up of the two-stage amplifying circuit, first order amplifying circuit adopts amplifier AD620 and 5-10 doubly the enlargement ratio of unity gain bandwidth height to 1MHz, and second level amplifying circuit adopts amplifier OP37 and 10-40 doubly the enlargement ratio of unity gain bandwidth height to 30MHz.
As a further improvement on the present invention, this polishing Pyrex or GG-17 glass ring plate thickness are 2-4mm, this spun gold internal lead is φ 25-φ 40 μ m, and this high frequency dynamic pressure transducer has 200-1000KHz natural frequency, 0～60-300KHz bandwidth and 0.5-0.1 μ S rise time.
The invention has the beneficial effects as follows:
The tactiosensible material of this high-frequency dynamic high voltage sensing adopts the silicon single crystal of high Young's modulus of elasticity, pressure-sensitive diaphragm is the flat silicon diaphragm of circle of the periphery fixed of minimum radius, utilize the conversion of piezoresistive principles realizable force electricity, micromachining technology to make silicon pressure resistance photosensitive elements, thereby sensitive element has more than the 200KHz, high natural frequency until 1500KHz, 0.5 μ S-0.1 μ S is exceedingly fast the rise time, and the LF-response characteristic that is low to moderate zero hertz.
Because the circle flat silicon diaphragm back side of this piezoresistance sensitivity assembly and the encapsulation of the end face of this sensor base entrance pressure port, be typically to flush package design, eliminated of the influence of pressure tube chamber effect to its dynamic test, fully guarantee the Dynamic response characteristic of sensor, satisfied the response frequency of dynamic test testing requirements fully.
When test request sensor extension line oversize, for avoiding interference, during customer requirements sensor output high level signal, adopt the high-frequency wideband amplifier of integrated encapsulation, realize 50-400 enlargement ratio doubly, guaranteed that this sensor can reach utilized bandwidth 100KHz, dynamically the amplitude-frequency error is less than 1%, rise time has been avoided the big weakness of its small-signal noise simultaneously again less than the high Dynamic response of 1 μ S.
Description of drawings
Fig. 1 is the cross-sectional view of the flat silicon diaphragm of circle in the quick district of the power of having of the present invention;
Fig. 2 is that the flat silicon diaphragm of circle of the present invention and Pyrex glass ring plate form the structural representation that piezoresistance sensitivity assembly and interior outer lead are drawn;
Fig. 3 is the structural representation that sensor of the present invention flushes encapsulation;
Fig. 4 is the sensor construction synoptic diagram that has the high-frequency wideband amplifier of the present invention;
Fig. 5 is the circuit theory diagrams of the high-frequency wideband amplifier that the present invention relates to.
Fig. 1 to Fig. 5 is done following further specifying:
| 1-Si 3N 4Layer | 13-O type circle |
| 2-SiO 2Layer | The 14-PCB card extender |
| The 15-outgoing cable | |
| The quick district of the circular power of 6- | 16-sensor pipe cap |
| 7-Pyrex glass ring plate | The 17-Wire crimping cap |
| The flat silicon diaphragm of 9-circle | The solid grillage of 18- |
| 11-spun gold internal lead | The 19-transit cable |
| The 12-sensor base | The 20-high-frequency wideband amplification circuit |
Embodiment
High-frequency dynamic high voltage sensing adopts the flat film utilization of circle of the periphery fixed of MEMS silicon body micromachined technology making to flush encapsulation, eliminate of the influence of tube chamber effect to dynamic test, realization is to the real-time measurement of dynamic pressure, adopt the high-frequency wideband amplifier, when guaranteeing to have enough high frequency sound, avoided the big weakness of its small-signal noise again.Implementation step according to as Fig. 1 to realization shown in Figure 5:
Fig. 1 is the flat silicon diaphragm of circle with the quick district of circular power, will cover the thick SiO of 1 μ m on the two sides with traditional thermal oxidation technique earlier in the processing of MEMS technology as the twin polishing silicon chip of flexible member
2Layer 2, the LPCVD method with standard covers the thick Si of 3000A on the two sides again
3N
4Layer 1; Use the Twi-lithography technology, etch away the quick district of the positive circular power of the flat silicon diaphragm of this circle Si at position in addition
3N
4Layer and SiO
2Layer keeps the Si that position, the quick district of circular power covers
3N
4Layer and SiO
2Layer; With dual surface lithography technology and ion implantation doping technology, be made into Hui Sidun strain full-bridge and draw the electrode of strain resistor at the front ad-hoc location of the flat silicon diaphragm of this circle.Above-mentioned not in detail the narration all be the integrated circuit technology of standard.
Fig. 2 is the piezoresistance sensitivity assembly that the flat silicon diaphragm of described circle is formed, because the quick district 6 of circular power of the flat silicon diaphragm 9 of circle is removed with the insulation course of exterior domain, utilize static bonding process should the zone and thickness welded together for polishing Pyrex or the GG-17 glass ring plate 7 of 2-4mm, adopting the spun gold of 4 or 5 φ 25-φ 40 μ m again is internal lead 11, with gold wire bonder the electrode that one end of spun gold is welded on silicon Hui Sidun strain full-bridge is drawn on the piece.
Fig. 3 is the sensor construction synoptic diagram that flushes encapsulation, the glass ring plate another side of this piezoresistance sensitivity assembly is sticked on the belt pit face that the entrance pressure port of this sensor base 12 is provided with epoxide-resin glue, the flat silicon diaphragm of the circle back side of realizing this piezoresistance sensitivity assembly just in time with the end face of this sensor base entrance pressure end, the other end of spun gold internal lead is welded on the PCB card extender 14 as built-up circuit, this PCB card extender is fixed in the cavity of this sensor base, and the heart yearn of outgoing cable 15 is welded on the corresponding pcb board, thereby the switching of outer lead in realizing.
This sensor base afterbody is rotated with the sensor pipe cap 16 that is used to encapsulate this sensor, this outgoing cable is drawn by this sensor pipe cap bottom ports, and be fixed in this sensor pipe cap based on Wire crimping cap 17, can be provided with O type circle 13 between this sensor base afterbody and this sensor pipe cap and between this Wire crimping cap and this sensor pipe cap.
Fig. 4 is the sensor construction synoptic diagram that has the two-stage amplifying circuit, this spun gold internal lead is connected with high-frequency wideband amplification circuit 20 with transit cable 19 by PCB card extender 14, this high-frequency wideband amplification circuit is fixing based on the solid grillage in this sensor cavity 18, heart yearn with this outgoing cable is welded on this high-frequency wideband amplification circuit again, thereby the high frequency of realizing sensor signal amplifies.
When test request sensor extension line oversize, thereby for avoid interference, during customer requirements sensor output high level signal, adopt the high-frequency wideband amplifier of integrated encapsulation, this amplifier has high utilized bandwidth, the rise time of 1 μ S and extremely low low-frequency noise to 0-100KHz.
This high frequency bandwidth amplifying circuit is made up of the two-stage amplifying circuit, the first order adopts unity gain bandwidth that the AD620 of 1MHz is only arranged, it has extremely excellent low-noise characteristic, it is the low noise assurance of amplifying circuit, the first order adopts 4-10 low enlargement ratio doubly, thereby AD620 still has the frequency response of 800KHz at this moment, because it has higher slew rate, be again that small-signal amplifies, so the rise time that can guarantee 1 μ S; The second level amplifies to adopt the high fdrequency instrument amplifier OP37 of height to the unity gain bandwidth of 30MHz, adopts 10-40 enlargement ratio doubly, thereby has sufficiently high frequency response to guarantee, has avoided the big weakness of its small-signal noise simultaneously again.
Fig. 5 is the circuit theory diagrams embodiment of the high-frequency wideband amplifier that the present invention relates to, and this high-frequency wideband amplifier is made up of three parts, wherein:
1, LM317 and R5, D1, C6, C7 consist of the constant-current supply that sensor provides work, can determine the R5 size decision constant current size that LM317 provided according to formula I=1.25/R, the filtering circuit of D1, C6, the constant current of C7 composition is used to remove the interference and the noise of power supply.
2, AD620 and R1, C1, C8, C9, C2, R2 form the first order amplification of this high-frequency wideband amplifier, R1 is a fixed resistance, its value size is R=49.4K/ (G-1), (G=4～10) are connected across between 1,8 pin of AD620, this grade enlargement factor is fixed as 4～10 times, make AD620 under this enlargement factor, have, have higher frequency response simultaneously than low noise; C1 is connected across and is used for the sensor input noise of filtering 800～1MHz between 2,3 pin of AD620; C8, C9 are used for the interference noise of filtering AD620 working power; C2, R2 form AD620 and amplify its signal interference of filtering circuit filtering that output signal is the OP37 input signal.
3, OP37 and C3, C4, C5, R3, R4, W2 and R3, W1 forms the second level of this amplifying circuit and amplifies, W1, W2 is three end adjustable resistances (potentiometer), R3, W2, R4 is connected across 1 pin of OP37, on 7 pin and 8 pin, this part is formed the zero-bit regulating circuit of the zero-bit mistuned circuit of OP37 as this high-frequency wideband amplifier, and R3, W1 is connected across 2 pin of OP37 respectively, between 6 pin and the power supply ground as the adjusting of the enlargement factor of second level amplifying circuit, C3, C4, C5 forms the power supply of second level amplifying circuit and the filtering of signal output, the filtering circuit that disturbs as the signal of second level amplifying circuit.
The range of this high-frequency dynamic high voltage sensing is by the flat silicon diaphragm THICKNESS CONTROL of circle in the quick district of the circular power of having of micromachined, the control of diaphragm thickness adds isotropy by mechanical reduction or the anisotropy rot etching technique is finished, and should justify flat silicon diaphragm thickness corresponding to this cell pressure range 0～1MPa-100MPa is 0.2-0.9mm.
The flat silicon diaphragm of the circle of this high-frequency dynamic high voltage sensing back side flushes with the entrance pressure port of this sensor base, be typically to flush package design, eliminated of the influence of pressure tube chamber effect to its dynamic test, fully guarantee the Dynamic response characteristic of sensor, satisfied the response frequency of dynamically pressure testing testing requirements fully.
This high-frequency dynamic high voltage sensing can be realized 50-400 enlargement ratio doubly by the broad band amplifier that two-stage is amplified, guaranteed that this sensor can reach gain bandwidth (GB) 800KHz, rise time has been avoided the big weakness of its small-signal noise simultaneously again less than the high Dynamic response of 1 μ S.
This high-frequency dynamic high voltage sensing function admirable, stable, antijamming capability is strong, can be used for the purposes of the high sensitivity dynamically pressure testing of operating modes such as aerodynamics test, and market outlook are preferably arranged.
The main performance index of product of the present invention is;
1, range: 0～1MPa-100MPa, output sensitivity: 60～150mV or 0-5V
2, precision: 0.3%～0.01%FS
3, natural frequency: 0～200-1000KHz
4, utilized bandwidth: 0～60-300KHz
5, the rise time: 0.5-0.1 μ S
6, time stability :≤0.1mV
7, temperature stability :≤5 * 10
-4/ ℃ FS.
Claims (7)
1. a piezoresistance type high-frequency dynamic high voltage sensing is made up of piezoresistance sensitivity assembly, sensor base (12), built-up circuit and outgoing cable (15), it is characterized in that:
1) this piezoresistance sensitivity assembly is made up of silicon piezoresistance sensitivity element and glass ring plate, and this silicon piezoresistance sensitivity element is for having the flat silicon diaphragm of circle (9) in the quick district of circular power (6), and the flat silicon diaphragm of this circle two sides is coated with SiO successively
2Layer (2) and Si
3N
4Layer (1), there is Hui Sidun strain full-bridge in front, the quick district of this power and draws resistance electrode, the quick district of this power front periphery exposes silicon, and be welded in polishing Pyrex or GG-17 glass ring plate (7), form this piezoresistance sensitivity assembly, this resistance electrode is welded in spun gold internal lead (11) one ends, and the diameter of the flat silicon diaphragm of circle is 1.5-4mm, and thickness is 0.15-0.82mm;
2) the glass ring plate another side of this piezoresistance sensitivity assembly sticks on the belt pit face that this sensor base entrance pressure port is provided with, realize the circle flat silicon diaphragm back side of this piezoresistance sensitivity assembly and the end face encapsulation of this sensor base entrance pressure port, this spun gold internal lead other end is welded to this built-up circuit, the heart yearn of this outgoing cable is welded in this built-up circuit, realizes this spun gold internal lead and corresponding heart yearn conducting;
3) afterbody of this sensor base is rotated with the sensor pipe cap (16) that is used to encapsulate this sensor, and this outgoing cable is drawn by this sensor pipe cap bottom ports, and is fixed in this sensor pipe cap based on Wire crimping cap (17).
2. a kind of piezoresistance type high-frequency dynamic high voltage sensing as claimed in claim 1, it is characterized in that, the flat silicon diaphragm of this circle adopts the silicon single crystal of high Young's modulus of elasticity, and should justify flat silicon diaphragm thickness corresponding to this cell pressure range 0～1MPa-100MPa is 0.2-0.9mm.
3. a kind of piezoresistance type high-frequency dynamic high voltage sensing as claimed in claim 1 is characterized in that, the resistance of this Hui Sidun strain full-bridge has the following resistance of 1K Ω.
4. a kind of piezoresistance type high-frequency dynamic high voltage sensing as claimed in claim 1 is characterized in that, this built-up circuit is the interior PCB card extender (14) of cavity that is fixed in this sensor base.
5. a kind of piezoresistance type high-frequency dynamic high voltage sensing as claimed in claim 1, it is characterized in that, be connected to the high frequency bandwidth amplifying circuit (20) of integrated encapsulation between this built-up circuit and this outgoing cable, realize that the transmission signals high frequency amplifies, this high frequency bandwidth amplifying circuit had up to the bandwidth of 100KHz and the rise time of 1 μ S.
6. a kind of piezoresistance type high-frequency dynamic high voltage sensing as claimed in claim 5, it is characterized in that, this high frequency bandwidth amplifying circuit is made up of the two-stage amplifying circuit, first order amplifying circuit adopts amplifier AD620 and 5-10 doubly the enlargement ratio of unity gain bandwidth height to 1MHz, and second level amplifying circuit adopts amplifier OP37 and 10-40 doubly the enlargement ratio of unity gain bandwidth height to 30MHz.
7. a kind of piezoresistance type high-frequency dynamic high voltage sensing as claimed in claim 1, it is characterized in that, this polishing Pyrex or GG-17 glass ring plate thickness are 2-4mm, this spun gold internal lead is φ 25-φ 40 μ m, and this high frequency dynamic pressure transducer has 200K-1000KHz natural frequency, 0～60-300KHz bandwidth and 0.5-0.1 μ S rise time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100379822A CN100371696C (en) | 2005-03-04 | 2005-03-04 | Piezoresistance type high-frequency dynamic high voltage sensing device |
Applications Claiming Priority (1)
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|---|---|---|---|
| CNB2005100379822A CN100371696C (en) | 2005-03-04 | 2005-03-04 | Piezoresistance type high-frequency dynamic high voltage sensing device |
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| Publication Number | Publication Date |
|---|---|
| CN1828247A CN1828247A (en) | 2006-09-06 |
| CN100371696C true CN100371696C (en) | 2008-02-27 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102072795B (en) * | 2009-11-20 | 2013-07-31 | 昆山双桥传感器测控技术有限公司 | Piezoresistive high-frequency high-temperature dynamic pressure sensor |
| CN102023066B (en) * | 2010-05-31 | 2012-07-18 | 昆山双桥传感器测控技术有限公司 | Universal pressure sensor of automobile |
| CN102928134B (en) * | 2012-10-30 | 2014-10-15 | 中国人民解放军总参谋部工程兵科研三所 | Carbon-resistance high pressure sensor |
| CN104390739A (en) * | 2014-11-26 | 2015-03-04 | 西安微纳传感器研究所有限公司 | Piezoresistive micro-melted high temperature pressure sensor and manufacturing method thereof |
| CN105352707B (en) * | 2015-08-18 | 2017-09-29 | 中国科学院西安光学精密机械研究所 | Optical system of star sensor ratio chromatism, test equipment and method of testing |
| DE102016223847A1 (en) * | 2016-11-30 | 2018-05-30 | Robert Bosch Gmbh | Sensor device and method for producing a sensor device |
| CN108444618A (en) * | 2018-04-11 | 2018-08-24 | 中北大学 | A kind of novel high-frequency pressure sensor and its packaging method |
| CN108981971A (en) * | 2018-06-20 | 2018-12-11 | 马鞍山松鹤信息科技有限公司 | A kind of pressure sensor device based on Internet of Things |
| CN109186816A (en) * | 2018-10-24 | 2019-01-11 | 中北大学 | A kind of microminiature digital pressure sensor |
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|---|---|---|---|---|
| US4373399A (en) * | 1981-02-05 | 1983-02-15 | Beloglazov Alexei V | Semiconductor strain gauge transducer |
| CN87207601U (en) * | 1987-05-01 | 1988-02-03 | 宝鸡市秦岭晶体管厂 | Sintered silicon cup and high pressure sensor thereof |
| CN2112146U (en) * | 1992-02-25 | 1992-08-05 | 北京理工大学 | Plunger type copper-manganese piezoelectric resistance transducer |
-
2005
- 2005-03-04 CN CNB2005100379822A patent/CN100371696C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4373399A (en) * | 1981-02-05 | 1983-02-15 | Beloglazov Alexei V | Semiconductor strain gauge transducer |
| CN87207601U (en) * | 1987-05-01 | 1988-02-03 | 宝鸡市秦岭晶体管厂 | Sintered silicon cup and high pressure sensor thereof |
| CN2112146U (en) * | 1992-02-25 | 1992-08-05 | 北京理工大学 | Plunger type copper-manganese piezoelectric resistance transducer |
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| CN1828247A (en) | 2006-09-06 |
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