CN103532516B - Body wave resonator and its manufacture method - Google Patents
Body wave resonator and its manufacture method Download PDFInfo
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- CN103532516B CN103532516B CN201310337329.2A CN201310337329A CN103532516B CN 103532516 B CN103532516 B CN 103532516B CN 201310337329 A CN201310337329 A CN 201310337329A CN 103532516 B CN103532516 B CN 103532516B
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Abstract
The invention discloses a kind of piezoelectrics wave resonator and its manufacture method, wherein, the piezoelectrics wave resonator includes：Sandwich construction；Substrate, the surface of substrate has at least one groove, and sandwich construction covers at least one groove, and the sound reflecting structure of piezoelectrics wave resonator is constituted by least one cavity of formation；Wherein, in each cavity, sandwich construction and is not contacted to the bottom notch of the cavity with the bottom of cavity；Or, sandwich construction is raised to the direction of the bottom away from the cavity, and raised height is more than or equal to predetermined height of projection.The present invention is by controlling degree and upper raised height of the multi-layer film structure in piezoelectrics wave resonator to lower recess, ensure that both sides have good air reflection interface above and below the multi-layer film structure of piezoelectrics wave resonator, so as to ensure good bulk acoustic wave reflecting effect, it is ensured that Q values are in high level.
Description
Technical field
The present invention relates to semiconductor applications, and especially, it is related to a kind of piezoelectrics wave resonator and its manufacture method.
Background technology
Multi-layer film structure piezoelectrics wave resonance made by longitudinal resonance using piezoceramic multilayer membrane structure in thickness direction
Device, the one of SAW device and quartz-crystal resonator is had become in terms of mobile communication and high-speed serial data application
Individual viable option.Radio-frequency front-end bulk acoustic wave piezoelectric filter/duplexer provides superior filtering characteristic, for example, be inserted into
Loss, precipitous intermediate zone, larger power capacity, stronger anti-electrostatic discharging (ESD) ability etc..
High-frequency multilayer membrane structure piezoelectrics wave oscillator has ULF temperature drift, the advantage is that：Phase noise
Low, low in energy consumption and bandwidth modulation scope is big.In addition, these miniature piezoelectric body wave resonators can be used on a silicon substrate
The compatible processing technology of CMOS (CMOS), to reduce unit cost, and is conducive to finally and CMOS
Circuit is integrated.
Typical piezoelectrics wave resonator includes two metal electrodes, the piezoelectrics between upper/lower electrode, is located at
Sound reflecting structure below hearth electrode and the substrate below sound reflecting structure.Generally by Top electrode, piezoelectric layer, bottom electrode
Overlapping region is defined as the effective coverage of resonator to trilaminate material in a thickness direction.When applying certain frequency between the electrodes
Voltage signal when, by the inverse piezoelectric effect that piezoelectric has, can be produced between the upper/lower electrode in effective coverage vertical
Nogata is to the sound wave of propagation, roundtrip between sound reflecting structure of the sound wave under the interface and hearth electrode of Top electrode and air
And produce resonance under certain frequency.Q values are the energy that the gross energy that resonator is stored is lost with resonator due to various approach
Ratio, sound wave reflection efficiency gets over that the acoustic energy that Gao Ze lets out from resonator is smaller, i.e. the Q values of resonator are higher.Q values
Lifting be favorably improved logical stopband characteristic using piezo-electric resonator as the wave filter of elementary cell, ensure that multilayer film knot
The performance of structure piezoelectric filter.
In order that sound wave forms good reflecting effect between upper/lower electrode, generally the effective area of resonator is formed
In on the substrate with cavity structure as shown in Figure 1.Multi-layer film structure piezoelectrics wave resonator as shown in Figure 1 includes：Two
Individual metal electrode T and B, the piezoelectric P between upper/lower electrode, the sacrifice layer PSG below hearth electrode and it is located at
Substrate S below sacrifice layer PSG.Because the acoustic impedance ratio between air and hearth electrode is very big, sound wave hearth electrode with
Fabulous reflection can occur on the interface of air.In order to ensure minimum sound wave leakage, it is necessary to make the effective coverage to be formed hang down
The projection of Nogata upwards is as far as possible in the cavity area of substrate.
It is a kind of make cavity sound reflecting structure method the step of can include：
Step 1, cavity structure is etched in substrate S；
Step 2, with sacrificial layer material fill cavity structure；
Step 3, make hearth electrode B, piezoelectric layer P, top electrode T respectively on the substrate Jing Guo surface planarisation；
Step 4, removing sacrifice layer formation suspension structure.
After sacrifice layer is removed, in piezoelectrics wave resonator as shown in Figure 2, multi-layer film structure M（Including hearth electrode B, pressure
Electric layer P and top electrode T）Often produce deformation.A kind of deformation situation is：Multi-layer film structure M be recessed and with the bottom of cavity structure
Portion C is very close to or even occurred directly contact.Because bulk acoustic wave is remote small in the part reflection efficiency of hearth electrode and substrate contact
In hearth electrode and the interface of air, therefore acoustic wave energy can be leaked out from the place of multi-layer film structure and substrate contact,
And hearth electrode is bigger with area that cavity bottom comes in contact, energy leakage is more serious.Therefore it result in multi-layer film structure resonance
The reduction of Q values at the Q values especially parallel resonance frequency of device.
As shown in figure 3, another deformation situation is：In piezoelectrics wave resonator, multi-layer film structure M is convex to cavity outside
Rise, in this case, when needing for resonator and wave filter capping encapsulation wafer, raised multi-layer film structure is very
It is possible to and encapsulation wafer（Also referred to as, cover, Cap）It is in contact, so equally sound wave can not be made to obtain good reflection, so as to leads
Cause the Q values reduction of multi-layer film structure resonator.The resonator and wave filter so actually manufactured is often extremely difficult to it and set
The performance of timing.
In the wave filter for being connected by multiple piezoelectrics wave resonators and being constituted, due to needing to use different frequency resistance
The resonator of energy, generally needs the resonator with different effective coverage sizes being arranged together in the design.Same
Under the multi-layer film structure growth conditions of sample, the area of cavity is bigger, the easier generation deformation of multi-layer film structure, therefore with big face
The resonator of product cavity easily occur multi-layer film structure depression or it is raised and with substrate or encapsulation wafer contacts, cause wave filter whole
Body performance can not meet design requirement.
Deformation degree for the multi-layer film structure of piezoelectrics wave resonator in correlation technique is excessive, causes piezoelectrics wave humorous
Shake device Q values reduction the problem of, effective solution is not yet proposed at present.
The content of the invention
Deformation degree for the multi-layer film structure of piezoelectrics wave resonator in correlation technique is excessive, causes piezoelectrics wave humorous
Shake device the reduction of Q values the problem of, the present invention proposes a kind of piezoelectrics wave resonator and its manufacture method, can control piezoelectrics wave
The deformation degree of the multi-layer film structure of resonator, so as to ensure good bulk acoustic wave reflecting effect, makes Q values be in high level.
The technical proposal of the invention is realized in this way：
According to an aspect of the invention, there is provided a kind of piezoelectrics wave resonator.
The piezoelectrics wave resonator includes：
Sandwich construction；
Substrate, the surface of substrate has at least one groove, and sandwich construction covers at least one groove, by formation extremely
A few cavity constitutes the sound reflecting structure of piezoelectrics wave resonator；
Wherein, in each cavity, sandwich construction and is not contacted to the bottom notch of the cavity with the bottom of cavity；Or
Person, sandwich construction is raised to the direction of the bottom away from the cavity, and raised height is more than or equal to predetermined height of projection.
Also, in the case of bottom notch of the sandwich construction to the cavity, for each cavity, sandwich construction and the sky
Minimum range between the bottom of chamber is more than preset distance.
Preferably, above-mentioned preset distance is 0.1 μm.
Preferably, above-mentioned predetermined height of projection is 0.1 μm.
Further, in the plane of the opening of each groove, the most long straight line of 2 points of the edge of opening of the groove is connected
Length and the diameter ratio of the maximum inscribed circle of the opening of the groove are more than 1.
In addition, above-mentioned sandwich construction includes bottom electrode, the piezoelectric layer being covered in above bottom electrode and is covered in piezoelectric layer
The Top electrode of top, wherein, the region beyond multiple grooves, Top electrode is not overlapping with bottom electrode.
Alternatively, the opening shape of at least one groove includes：Circle, polygon, irregular shape.
In addition, above-mentioned piezoelectrics wave resonator further comprises：
Supporter, is configured above substrate；
Cap rock, has interval between supporter supports, raised sandwich construction and cap rock.
According to an aspect of the invention, there is provided a kind of manufacture method of piezoelectrics wave resonator.
The manufacture method of the piezoelectrics wave resonator includes：
Substrate is provided；
At least one groove is formed on substrate；
Expendable material is filled at least one groove；
Sandwich construction, sandwich construction covering substrate and at least one groove are formed above substrate；
Expendable material in groove is removed, the sound reflecting knot that at least one cavity constitutes piezoelectrics wave resonator is formed
Structure；
Wherein, at least one groove is formed by etching, also, controls by controlling etching period the depth of each groove
Degree, it is to avoid sandwich construction is contacted with the bottom of cavity after expendable material is removed；
Or, sandwich construction is raised to the direction of the bottom away from the cavity, and raised height is more than or equal to predetermined convex
Play height.
Wherein, the quantity of above-mentioned groove is multiple, also, when forming at least one groove on substrate, by controlling shape
Into groove quantity and/or parameter control the degree that is recessed to bottom portion of groove of sandwich construction after expendable material is removed,
And avoid sandwich construction from being contacted with the bottom of cavity.
Also, in the case of bottom notch of the sandwich construction to the cavity, for each cavity, sandwich construction and the sky
Minimum range between the bottom of chamber is more than preset distance.
Preferably, above-mentioned preset distance is 0.1 μm.
Preferably, above-mentioned predetermined height of projection is 0.1 μm.
Further, in the plane of the opening of each groove, the most long straight line of 2 points of the edge of opening of the groove is connected
Length and the diameter ratio of the maximum inscribed circle of the opening of the groove are more than 1.
Moreover, above-mentioned sandwich construction includes bottom electrode, the piezoelectric layer being covered in above bottom electrode and is covered in piezoelectric layer
The Top electrode of top, wherein, the region beyond multiple grooves, Top electrode is not overlapping with bottom electrode.
Alternatively, the opening shape of at least one groove includes：Circle, polygon, irregular shape.
In addition, the manufacture method of above-mentioned piezoelectrics wave resonator further comprises：
Before the expendable material in groove is removed, supporter is configured above substrate；
Expendable material in groove is removed, the sound reflecting knot that at least one cavity constitutes piezoelectrics wave resonator is formed
Structure；
Wherein, by controlling contact surface configuration of the cavity with sandwich construction, it is to avoid multilayer knot after expendable material is removed
Structure raises up more than the height of supporter.
Also, the manufacture method of above-mentioned piezoelectrics wave resonator is still further comprised：
Supporter is configured above substrate；
Cap rock is provided, it is convex in the case of sandwich construction is raised to the direction of the bottom of the remote cavity by supporter supports
There is interval between the sandwich construction and cap rock that rise.
The present invention is by controlling the multi-layer film structure in piezoelectrics wave resonator to the degree of lower recess and upper raised
Highly, it is ensured that both sides have good air reflection interface above and below the multi-layer film structure of piezoelectrics wave resonator, so as to ensure good
Good bulk acoustic wave reflecting effect, it is ensured that Q values are in high level.
Brief description of the drawings
Fig. 1 is the schematic diagram of piezoelectrics wave resonator in the prior art；
Fig. 2 is schematic diagram of the piezoelectrics wave resonator when multi-layer film structure is contacted with cavity bottom in the prior art；
Fig. 3 is that piezoelectrics wave resonator encapsulates showing when brilliant surface is contacted on multi-layer film structure and upper strata in the prior art
It is intended to；
Fig. 4 is the schematic diagram of piezoelectrics wave resonator according to embodiments of the present invention when sandwich construction is to lower recess；
Fig. 5 is the structure chart of piezoelectrics wave resonator according to embodiments of the present invention when sandwich construction is convex；
Fig. 6 is the principle of groove surfaces polygonal shape defined in piezoelectrics wave resonator according to embodiments of the present invention
Figure；
Fig. 7 is the schematic diagram of the groove surfaces polygonal shape according to embodiments of the present invention for changing piezoelectrics wave resonator；
Fig. 8 a are the top views of the piezoelectrics wave resonator according to further embodiment of the present invention；
Fig. 8 b are the profiles along the taken along line A-A of piezoelectrics wave resonator shown in Fig. 8 a；
Fig. 8 c are the profiles along the hatching N-N interceptions of piezoelectrics wave resonator shown in Fig. 8 a；
Fig. 9 a are the top views of the piezoelectrics wave resonator according to another embodiment of the invention;
Fig. 9 b are the profiles along the taken along line A-A of piezoelectrics wave resonator shown in Fig. 9 a；
Fig. 9 c are the profiles along the hatching N-N interceptions of piezoelectrics wave resonator shown in Fig. 9 a.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained belongs to what the present invention was protected
Scope.
There is provided a kind of piezoelectrics wave resonator for embodiments in accordance with the present invention.
Piezoelectrics wave resonator according to embodiments of the present invention can include：
Sandwich construction, wherein, sandwich construction includes hearth electrode, piezoelectric layer and Top electrode；
Substrate, the surface of substrate has at least one groove, and sandwich construction covers at least one groove, by formation extremely
A few cavity constitutes the sound reflecting structure of piezoelectrics wave resonator；
Wherein, in each cavity, sandwich construction and is not contacted to the bottom notch of the cavity with the bottom of cavity.And
And, for each cavity, the minimum range between sandwich construction and the bottom of the cavity is more than preset distance.In order to avoid body sound
Wave resonator acoustic wave energy is by Air Coupling to substrate, and the minimum range of multi-layer film structure and cavity bottom at least should be greater than humorous
Shake a quarter of sound wave wavelength in atmosphere, it is therefore preferred that the preset distance can be 0.1 μm.
As shown in Figure 4 and Figure 5, piezoelectrics wave resonator structure according to embodiments of the present invention includes：Substrate S, cavity C,
Hearth electrode B, piezoelectric layer P and Top electrode T, wherein, face hearth electrode B, piezoelectric layer P overlapping in vertical direction with Top electrode T
Product is defined as the effective coverage of piezoelectrics wave resonator, and the structure of composite membrane of all film compositions on cavity area is defined as
Multi-layer film structure M.
In actual applications, as shown in figure 4, for the piezoelectrics wave resonator according to the embodiment of the present invention sandwich construction to
Schematic diagram during lower recess, now, multi-layer film structure are not contacted to lower recess, and multi-layer film structure with cavity bottom.Pass through control
The technological parameter of cavity depth or multi-layer film structure growth processed so that multi-layer film structure is not contacted with cavity bottom.Hearth electrode B
Ultimate range with cavity volume bottom is Dp, it is preferable that the multi-layer film structure recess minimum point should with cavity bottom minimum range
More than 0.1 μm.
For example, it is the curve to lower recess that surface profile can be depicted on multilayer film M surfaces by step instrument, pass through meter
The depth capacity Ld of multi-layer film structure depression can be obtained by calculating curve minimum point.By controlling cavity to carve when preparing substrate
The erosion time, cavity depth Dp can be controlled, so as to control multi-layer film structure recess minimum point and cavity bottom vertical range
（Dp-Ld）, the distance is more than 0.1 μm.So, sound wave can be obtained very well in the scope overlapping with cavity area of effective coverage
Reflection, while for due to environmental change（Such as temperature change or impulsive force）The caused further deformation of multi-layer film structure leaves
Certain area, it is to avoid cause the reduction of Q values because the sound wave of resonator is revealed in cavity area.
There is provided a kind of piezoelectrics wave resonator according to another embodiment of the invention.
Piezoelectrics wave resonator according to embodiments of the present invention can include：
Sandwich construction；
Substrate, the surface of substrate has at least one groove, and sandwich construction covers at least one groove, by formation extremely
A few cavity constitutes the sound reflecting structure of piezoelectrics wave resonator；
Wherein, in each cavity, sandwich construction is raised to the direction of the bottom away from the cavity, and raised height is more than
Or equal to predetermined height of projection.Alternatively, above-mentioned predetermined height of projection can also for 0.1,0.2,0.3,0.4 μm.Preferably, on
It can be 0.1 μm to state predetermined height of projection.
As shown in figure 5, the structure chart of piezoelectrics wave resonator according to embodiments of the present invention when sandwich construction is convex,
Wherein, multi-layer film structure M arches upward upwards.By controlling the technological parameter in multi-layer film structure M forming processes can be so that going
After sacrificial layer material, multi-layer film structure M arches upward upwards, to avoid multi-layer film structure from being in contact with cavity bottom.
Surface profile can be depicted to be middle to arch in one, multi-layer film structure M surfaces cross-sectional scans by step instrument
Rise curve, so, sound wave can be reflected well in the scope overlapping with cavity area of effective coverage, at the same be due to
Environmental change（Such as temperature change or impulsive force）The caused further deformation of multi-layer film structure leaves certain safe range, it is to avoid
Cause the reduction of Q values because the sound wave of resonator is revealed in cavity area.Because multi-layer film structure arches upward upwards, so
The sky more shallow with respect to the depth of the piezoelectrics wave resonator structure of the embodiment shown in Fig. 4 can be formed when making substrate cavity
Chamber, it is preferred that cavity depth can be 0.5-1 μm.Such structure design reduces etch period, it is often more important that shallow sky
The relatively deep cavity of chamber makes structure have more preferable stability, improves the yield in production process.
In addition, in the case where environment needs, piezoelectrics wave resonator according to embodiments of the present invention can be wrapped further
Include：
Supporter, is configured above substrate；
Cap rock, has interval between supporter supports, raised sandwich construction and cap rock.
The surface of cap rock can be flat, or can also be recessed upwards.In piezoelectrics wave according to embodiments of the present invention
In resonator, raised sandwich construction is not contacted with cap rock.In order to avoid bulk acoustic wave resonator acoustic wave energy passes through Air Coupling
To cap rock, the minimum range between multi-layer film structure and cap rock at least should be greater than resonant acoustic wave in atmosphere wavelength four/
One.It is preferred that, the minimum range is more than 0.1 μm.
Membrane structure above piezoelectrics wave resonator described in above-described embodiment, cavity is to lower recess or to arch
Rise, between substrate cavity bottom or top encapsulation wafer have certain safe distance, it is to avoid because multi-layer film structure with
The Q values reduction of resonator and the performance impairment of wave filter caused by the contact of cavity bottom or encapsulation wafer.
According to another aspect of the present invention there is provided a kind of design method of piezoelectrics wave resonator, wherein, by simultaneously
Join the resonator of the backing tape cavity of small area, can be controlled many on cavity while large area frequency impedance performance is realized
The depression or degree of convexity of film structure, it is to avoid because multi-layer film structure bottom is contacted or multi-layer film structure top with cavity bottom
The problems such as portion is with resonator q decline caused by encapsulation wafer contacts and performance impairment.
Also, the resonator of the backing tape cavity of small area is whether used, the cavity shape of substrate may each be narrow
Long, also, in the plane of the opening of each groove, the length of most long straight line of 2 points of the edge of opening of the groove is connected with being somebody's turn to do
The diameter ratio of the maximum inscribed circle of the opening of groove is more than 1, and alternatively, the opening shape of at least one groove can include：
Circle, polygon, irregular shape.The effect of technical solution of the present invention causes the cavity for the piezoelectrics wave resonator for possessing large area
The degree of upper multi-layer film structure depression or projection is controlled, it is to avoid because multi-layer film structure bottom is contacted or many with cavity bottom
Decline or performance impairment with resonator q caused by encapsulation wafer contacts at the top of film structure.
The table of piezoelectrics wave resonator structure according to embodiments of the present invention, its effective coverage and relative substrate cavity
Face shape, which has, is characterized as thin-and-long.The cross sectional shape of cavity can be rectangle, ellipse, circle, polygon etc., section of cavity
Face is shaped as requiring that length-width ratio is more than 1 during rectangle, the oval major axis of requirement and minor axis length when the cross sectional shape of cavity is ellipse
Than more than 1.When cavity cross sectional shape be irregular polygon when, the requirement to the cross sectional shape of cavity be defined as follows and
Limitation：As shown in fig. 6, defining a diameter of d of inscribed circle maximum in polygonal region, define in polygonal region between 2 points
Ultimate range be L, it is desirable to L：d>1.
As shown in fig. 7, the effective coverage in the case where keeping area constant by being formed on long and narrow cavity and cavity,
For example, in the figure 7, making square U be changed into rectangle U ', irregular shape X is become X ', circular Z is become Z ', such knot
The border that structure changes the multilayer film for causing to suspend effectively is constrained, and very big amount of deflection, such cavity are not easily formed in film
On multi-layer film structure will not produce very big depression or convex, multi-layer film structure bottom will not be in contact with cavity bottom, sound
Ripple can be reflected well, it is to avoid cause the reduction of Q values because the sound wave of resonator is revealed in cavity area.With
Piezoelectrics wave resonator with cavity is as in the wave filter of elementary cell, it usually needs the piezoelectrics wave for using different area is humorous
Shake device.By being reasonably patterned into different area cavity surface shape, make that multi-layer film structure is excessively recessed or convex situation is obtained
Control is arrived, it is to avoid the reduction of resonator q, the performance of filter of resonator is satisfied design requirement.
In addition, multi-layer film structure can also be controlled to cavity outer lug by the technical method in embodiments of the invention
Degree, in the case where piezoelectrics wave resonator structure needs to be capped encapsulation wafer so that multi-layer film structure is not with encapsulating wafer
It is in contact, therefore equally it also avoid leakage of the sound wave in effective coverage, it is to avoid resonator q reduction.
In addition, in yet another embodiment of the present invention, the multi-layer film structure of above-mentioned piezoelectrics wave resonator structure includes
Bottom electrode, the piezoelectric layer being covered in above bottom electrode and the Top electrode being covered in above piezoelectric layer, wherein, in multiple grooves
Region in addition, Top electrode is not overlapping with bottom electrode.Alternatively, the opening shape of at least one groove can include：It is circular, many
Side shape, irregular shape.
Technique according to the invention scheme, can realize large-area piezoelectricity by the parallel connection of small area piezoelectrics wave resonator
The frequency impedance performance of body wave resonator, while reducing multi-layer film structure depression or convex degree.Further, piezoelectricity
The groove surfaces shape of body wave resonator can use the shape of ratio shown in Fig. 6.
It is the piezoelectrics wave resonator according to further embodiment of the present invention shown in Fig. 8 a, 8b, 8c.As shown in Figure 8 a, it is
According to the top view of the piezoelectrics wave resonator of further embodiment of the present invention, piezoelectrics wave resonance according to embodiments of the present invention
Device structure includes：Substrate S, cavity C, hearth electrode B, piezoelectric layer P and Top electrode T, wherein, hearth electrode B, piezoelectric layer P and upper electricity
Area overlapping in vertical direction pole T is defined as the effective coverage of piezoelectrics wave resonator, and will own on cavity area
The structure of composite membrane of film composition is defined as multi-layer film structure；Fig. 8 b are the hatching A- along piezoelectrics wave resonator shown in Fig. 8 a
The profile of A interceptions；Fig. 8 c are the profiles along the hatching N-N interceptions of piezoelectrics wave resonator shown in Fig. 8 a.Pass through figure
8a-8c can be seen that the bottom electrode formed in substrate and is mutually connected to each other across two cavitys, the top on two cavitys
Portion's electrode is again connected to together, and piezoelectric layer portion P, which is etched, exposes hearth electrode B in order to which electricity is connected, and its result causes two
Resonator structure on individual cavity is connected in parallel, wherein the coupling part figure of bottom electrode and the coupling part of top electrodes
Figure does not have overlapping on the direction perpendicular to substrate, thus will not form effective coverage outside cavity and cause energy leakage.
Due to reducing the area of multi-layer film structure on single cavity, the situation of multi-layer film structure depression has obtained effective control, sound wave
It can be reflected well, it is to avoid cause the reduction of Q values because the sound wave of resonator is revealed in cavity area, while again
The frequency impedance performance that large area resonator has can be realized.
Equally, by the method in the present embodiment multi-layer film structure can also to be controlled to cause to the degree of cavity outer lug more
Film structure is not in contact with encapsulation wafer, and Fig. 9 a are the vertical views of the piezoelectrics wave resonator according to another embodiment of the invention
Figure, the structure composition of piezoelectrics wave resonator shown in Fig. 9 a is identical with the piezoelectrics wave resonator shown in Fig. 8 a；Fig. 9 b be along
The profile of the taken along line A-A of piezoelectrics wave resonator shown in Fig. 9 a；Fig. 9 c are along piezoelectrics wave resonance shown in Fig. 9 a
The profile of the hatching N-N interceptions of device.Structure shown by Fig. 9 a-9c and structure shown in Fig. 8 a-8c are essentially identical, difference
It is the multi-layer film structure in structure shown in Fig. 9 a-9c（Including Top electrode T, piezoelectric layer P, hearth electrode B）It is upward, and
There is certain distance between encapsulation wafer.The convex configuration can equally be such that sound wave is reflected well, it is to avoid
Cause the reduction of Q values because the sound wave of resonator is revealed in cavity area, while can realize that large area resonator is had again
Frequency impedance performance.
Fig. 8 a-8c and Fig. 9 a-9c illustrate only two exemplary embodiments, and for simplicity, not have in figure
There is the raceway groove shown for removing sacrificial layer material.Although all illustrating two resonators of parallel connection in Fig. 8 a-8c and Fig. 9 a-9c
Cavity, and its effective coverage is shaped as rectangle, but in fact, the quantity of resonator can be more, and resonator
Cavity and effective coverage shape can also be circle, ellipse, polygon etc..Also, parallel way can be with a variety of between resonator
Various, such as Top electrode of different resonators is interconnected with bottom electrode, using higher beyond top electrode or hearth electrode material
The metal of electrical conductivity materials carries out electrical parallel of resonator etc..It should be understood that every in order to control multilayer film knot
The depression of structure or convex degree, it is to avoid resonator Q values reduction and by realizing that larger area is humorous compared with small area resonator parallel connection
The way for device electrical impedance characteristic effect of shaking all should be within the protection domain of this patent.
There is provided a kind of manufacture method of piezoelectrics wave resonator for embodiments in accordance with the present invention.
The manufacture method of piezoelectrics wave resonator according to embodiments of the present invention includes：
There is provided substrate for step 1；
Step 2, at least one groove is formed on substrate；
Step 3, expendable material is filled at least one groove；
Step 4, sandwich construction, sandwich construction covering substrate and at least one groove are formed above substrate；
Step 5, the expendable material in groove is removed, the sound for forming at least one cavity composition piezoelectrics wave resonator is anti-
Penetrate structure；
Step 6, wherein, at least one groove is formed by etching, also, control by controlling etching period each recessed
The depth of groove, it is to avoid sandwich construction is contacted with the bottom of cavity after expendable material is removed；
Or, sandwich construction is raised to the direction of the bottom away from the cavity, and raised height is more than or equal to predetermined convex
Play height, it is preferable that the predetermined height of projection is 0.1 μm.Sandwich construction is the multi-layer film structure mentioned in text.Work as multilayer
When structure raises up, the depth of groove can than sandwich construction to lower recess when it is shallow.
Wherein, the quantity of above-mentioned groove is multiple, also, when forming at least one groove on substrate, by controlling shape
Into groove quantity and/or parameter control the degree that is recessed to bottom portion of groove of sandwich construction after expendable material is removed,
And avoid sandwich construction from being contacted with the bottom of cavity.
Also, in the case of bottom notch of the sandwich construction to the cavity, for each cavity, sandwich construction and the sky
Minimum range between the bottom of chamber is more than preset distance, it is preferable that the preset distance is 0.1 μm.
Further, in the plane of the opening of each groove, the most long straight line of 2 points of the edge of opening of the groove is connected
Length and the diameter ratio of the maximum inscribed circle of the opening of the groove are more than 1.
Moreover, above-mentioned sandwich construction includes bottom electrode, the piezoelectric layer being covered in above bottom electrode and is covered in piezoelectric layer
The Top electrode of top, wherein, the region beyond multiple grooves, Top electrode is not overlapping with bottom electrode.
Alternatively, the opening shape of at least one groove includes：Circle, polygon, irregular shape.
In addition, the manufacture method of above-mentioned piezoelectrics wave resonator may further include：
Before the expendable material in groove is removed, supporter is configured above substrate；
Expendable material in groove is removed, the sound reflecting knot that at least one cavity constitutes piezoelectrics wave resonator is formed
Structure；
Wherein, by controlling contact surface configuration of the cavity with sandwich construction, it is to avoid multilayer knot after expendable material is removed
Structure raises up more than the height of supporter.
Also, the manufacture method of above-mentioned piezoelectrics wave resonator is still further comprised：
Supporter is configured above substrate；
Cap rock is provided, it is convex in the case of sandwich construction is raised to the direction of the bottom of the remote cavity by supporter supports
There is interval between the sandwich construction and cap rock that rise.Wherein, the surface of cap rock opposing layers membrane structure can also may be used with concave up
To be plane.
Embodiments in accordance with the present invention, substrate and encapsulation wafer described in text can be by silicon, germanium, GaAs, nitridations
Gallium, sapphire etc. are constituted, but are not limited to above material.Top electrode and bottom electrode can by golden (Au), tungsten (W), molybdenum (Mo),
The metalloids such as platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminium (Al), titanium (Ti) are formed, the general phase of upper/lower electrode material
Together, but it is also possible to different.Piezoelectric layer can be aluminium nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate
(LiNbO3), quartzy (quartz), potassium niobate (KNbO3) or lithium tantalate (LiTaO3) etc. material, but be not limited to above material.
In summary, by means of the above-mentioned technical proposal of the present invention, the present invention is by controlling in piezoelectrics wave resonator
Degree from multi-layer film structure to lower recess and convex height, it is ensured that the effective district of the multi-layer film structure of piezoelectrics wave resonator
Domain is not contacted with the surface of solids up and down, so as to ensure good bulk acoustic wave reflecting effect, Q values is maintained previous level, so that
There is good bulk acoustic wave reflecting effect to a kind of upper and lower surface for the multi-layer film structure for ensureing bulk acoustic wave resonator effective coverage
The structure of piezoelectrics wave resonator structure and multi-layer film structure piezoelectric filter.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (16)
1. a kind of piezoelectrics wave resonator, it is characterised in that including：
Sandwich construction；
Substrate, the surface of the substrate has at least one groove, and described at least one described groove of sandwich construction covering passes through
At least one cavity formed constitutes the sound reflecting structure of the piezoelectrics wave resonator；
Wherein, in each cavity, the sandwich construction is configured to the bottom notch to the cavity, and the sandwich construction is with being somebody's turn to do
Minimum range between the bottom of cavity is contacted more than preset distance with the bottom not with cavity, wherein, the bottom of the cavity
It is flat surface；Or, the sandwich construction is raised to the direction of the bottom away from the cavity, and raised height is more than or equal to
Predetermined height of projection；And
Top electrode above supporting part and bottom electrode between adjacent cavities is misaligned in vertical direction.
2. piezoelectrics wave resonator according to claim 1, it is characterised in that the preset distance is 0.1 μm.
3. piezoelectrics wave resonator according to claim 1, it is characterised in that the predetermined height of projection is 0.1 μm.
4. piezoelectrics wave resonator according to claim 1, it is characterised in that in the plane of the opening of each groove, even
The length and the diameter ratio of the maximum inscribed circle of the opening of the groove for connecing the most long straight line of 2 points of the edge of opening of the groove are big
In 1.
5. piezoelectrics wave resonator according to claim 1, it is characterised in that the sandwich construction includes bottom electrode, covered
The piezoelectric layer being placed on above the bottom electrode and the Top electrode being covered in above the piezoelectric layer, wherein, the multiple recessed
Region beyond groove, the Top electrode is not overlapping with the bottom electrode.
6. piezoelectrics wave resonator according to claim 1, it is characterised in that the opening shape of at least one groove
Including：Circle, polygon, irregular shape.
7. piezoelectrics wave resonator according to claim 1, it is characterised in that further comprise：
Supporter, configuration is square over the substrate；
Cap rock, is supported by above support, has interval between the raised sandwich construction and the cap rock.
8. a kind of manufacture method of piezoelectrics wave resonator, it is characterised in that including：
Substrate is provided；
At least one groove is formed over the substrate；
Expendable material is filled at least one described groove；
Square into sandwich construction over the substrate, the sandwich construction covers the substrate and at least one described groove；
Expendable material in the groove is removed, the sound reflecting that at least one cavity constitutes the piezoelectrics wave resonator is formed
Structure；
Wherein, the sandwich construction is configured to the bottom notch to the cavity, and at least one described groove is formed by etching, and
And, the depth of each groove is controlled by controlling etching period, for each cavity, the bottom of the sandwich construction and the cavity
The bottom that minimum range between portion is more than preset distance to avoid the expendable material from being removed rear sandwich construction and cavity connects
Touch, wherein, the bottom of the cavity is flat surface；
Or, the sandwich construction is raised to the direction of the bottom away from the cavity, and raised height is more than or equal to predetermined convex
Play height；And
Top electrode above supporting part and bottom electrode between adjacent cavities is misaligned in vertical direction.
9. manufacture method according to claim 8, it is characterised in that the quantity of the groove is multiple, also, described
When at least one groove is formed on substrate, controlled by the quantity and/or parameter of the groove for controlling to be formed in the sacrifice material
The degree that the sandwich construction is recessed to bottom portion of groove after material is removed, and avoid the bottom of the sandwich construction and cavity from connecing
Touch.
10. manufacture method according to claim 8, it is characterised in that the preset distance is 0.1 μm.
11. manufacture method according to claim 8, it is characterised in that the predetermined height of projection is 0.1 μm.
12. manufacture method according to claim 8, it is characterised in that in the plane of the opening of each groove, connect this recessed
The length of the most long straight line of 2 points of the edge of opening of groove and the diameter ratio of the maximum inscribed circle of the opening of the groove are more than 1.
13. manufacture method according to claim 8, it is characterised in that the sandwich construction includes bottom electrode, is covered in institute
The piezoelectric layer above bottom electrode and the Top electrode being covered in above the piezoelectric layer are stated, wherein, beyond the multiple groove
Region, the Top electrode is overlapping with the bottom electrode.
14. manufacture method according to claim 8, it is characterised in that the opening shape of at least one groove includes：
Circle, polygon, irregular shape.
15. manufacture method according to claim 8, it is characterised in that further comprise：
Before the expendable material in the groove is removed, side configures supporter over the substrate；
Expendable material in the groove is removed, the sound reflecting that at least one cavity constitutes the piezoelectrics wave resonator is formed
Structure；
Wherein, by controlling the cavity surface configuration of the contact with the sandwich construction, it is to avoid the expendable material is removed
The sandwich construction raises up more than the height of above support afterwards.
16. manufacture method according to claim 8, it is characterised in that further comprise：
Side configures supporter over the substrate；
Cap rock is provided, supported by above support, it is convex in the case of sandwich construction is raised to the direction of the bottom of the remote cavity
There is interval between the sandwich construction and the cap rock that rise.
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