CN102545827B - Thin film bulk acoustic resonator, communication device and radio-frequency module - Google Patents
Thin film bulk acoustic resonator, communication device and radio-frequency module Download PDFInfo
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- CN102545827B CN102545827B CN201210000816.5A CN201210000816A CN102545827B CN 102545827 B CN102545827 B CN 102545827B CN 201210000816 A CN201210000816 A CN 201210000816A CN 102545827 B CN102545827 B CN 102545827B
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- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 238000004891 communication Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000012528 membrane Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- -1 as shown in Figure 4 Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/582—Multiple crystal filters implemented with thin-film techniques
- H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/587—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a kind of thin film bulk acoustic resonator, communication device and radio-frequency module.This thin film bulk acoustic resonator comprises substrate, described substrate is disposed with lower electrode layer, piezoelectric membrane and upper electrode layer; The stacked air-gap being provided with more than 2 or 2 between described substrate and lower electrode layer.The thin film bulk acoustic resonator that the embodiment of the present invention provides, while having higher-wattage capacity, can have less volume and structural stability, is applicable in the application of high power capacity demand.
Description
Technical field
The embodiment of the present invention relates to resonator technologies, particularly relates to a kind of thin film bulk acoustic resonator, communication device and radio-frequency module.
Background technology
Along with the development of wireless communication technology, the integrated and miniaturized development trend having become wireless radio frequency modules, integrated, the miniaturized and high power of the filter in radio-frequency module front-end circuit then becomes very crucial.Due to thin film bulk acoustic resonator (Film Bulk Acoustic Resonator, FBAR) have that volume is little, operating frequency is high and be convenient to the advantages such as integrated, the filter be made up of thin film bulk acoustic resonator has been widely used in radio communication device technical field.
Fig. 1 is the structural representation of existing air-gap structure FBAR.As shown in Figure 1, in existing air-gap structure FBAR, in the piezoelectricity sandwich structure be made up of top electrode 101, piezoelectric membrane 102, bottom electrode 103, this piezoelectricity sandwich structure is arranged on a substrate 104, and be formed with air-gap 105 on a substrate 104, during FBAR work, air-gap 105 couples of FBAR can be utilized to carry out sound wave isolation, ensure the service behaviour of FBAR.Because FBAR relies on the up-down vibration of piezoelectricity sandwich structure to carry out work, in the FBAR course of work, stress can be produced in the edge of air-gap and concentrate (as indicated by a broken line in fig. 1 position), and along with the power of the work of FBAR larger, the vibration of piezoelectric membrane is stronger, the stress that stress raiser produces will be larger, when the stress produced exceedes the stress bearing strength of bottom electrode, piezoelectric membrane and top electrode, the piezoelectricity sandwich structure of FBAR will be caused to subside or break, and FBAR cannot normally work.In addition, generally increased the power capacity of FBAR by the area increasing FBAR structure hollow air gap in prior art, but FBAR hollow air-gap area increases to a certain degree, FBAR structure will become more unstable, the power capacity of FBAR can not increase on the contrary, also there will be the trend of stress decrease.
To sum up, in existing air-gap structure FBAR, due to air-gap edge stress concentration problem, cause the power capacity of FBAR limited, FBAR power capacity is lower; And the simple area by increasing the air-gap in FBAR structure, after air-gap area acquires a certain degree, FBAR structure will become more unstable, and the power capacity of FBAR can not increase on the contrary, also there will be the problem that power capacity declines on the contrary.
Summary of the invention
The embodiment of the present invention provides a kind of thin film bulk acoustic resonator, communication device and radio-frequency module, effectively can overcome the excessive and problem causing power capacity lower of the air-gap stress existed in existing FBAR structure, on the basis of improving thin film bulk acoustic resonator power capacity, problem of stress concentration can be reduced.
The embodiment of the present invention provides a kind of thin film bulk acoustic resonator, comprising: substrate, and described substrate has been cascading lower electrode layer, piezoelectric membrane and upper electrode layer;
The air-gap of more than 2 or 2 is provided with between described substrate and lower electrode layer.
The embodiment of the present invention provides a kind of communication device, comprises the thin film bulk acoustic resonator that the invention described above embodiment provides.
The embodiment of the present invention provides a kind of radio-frequency module, comprises duplexer or multiplexer, the thin film bulk acoustic resonator that the resonator in described duplexer or multiplexer provides for adopting the invention described above embodiment
The thin film bulk acoustic resonator that the present embodiment provides, communication device and radio-frequency module, thin film bulk acoustic resonator has multiple air-gap structure, and each air-gap shares identical upper electrode layer, piezoelectric membrane and lower electrode layer, like this, during thin film bulk acoustic resonator work, the vibration that piezoelectric membrane produces will be distributed on each air-gap structure, and the stress that each air-gap structure edge is produced is all less, effectively can improve stability and the reliability of whole film bulk acoustic resonator structure; Simultaneously, because each air-gap shares upper electrode layer, piezoelectric membrane lower electrode layer, the power of thin film bulk acoustic resonator is exactly the power sum that piezoelectric membrane region corresponding to each air-gap produces, make thin film bulk acoustic resonator entirety can have higher power capacity, meet in the thin film bulk acoustic resonator application of significant power demand; In addition, have the power circuit of equal-wattage capacity relative to tradition, the thin film bulk acoustic resonator that the present embodiment provides has less volume and structural stability.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of existing air-gap structure FBAR;
The film bulk acoustic resonator structure schematic diagram that Fig. 2 A provides for the embodiment of the present invention one;
Fig. 2 B be in Fig. 2 A A-A to the structural representation of shown air-gap;
The structural representation of the thin film bulk acoustic resonator hollow air-gap that Fig. 3 provides for the embodiment of the present invention two;
The structural representation of the thin film bulk acoustic resonator that Fig. 4 provides for the embodiment of the present invention three;
The structural representation of the radio-frequency module that Fig. 5 A provides for the embodiment of the present invention four;
Fig. 5 B is the structural representation of duplexer in Fig. 5 A.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
The film bulk acoustic resonator structure schematic diagram that Fig. 2 A provides for the embodiment of the present invention one; Fig. 2 B be in Fig. 2 A A-A to the structural representation of shown air-gap.As shown in Figure 2 A, the present embodiment FBAR comprises substrate 11, and this substrate 11 has been cascading lower electrode layer 12, piezoelectric membrane 13 and upper electrode layer 14; The air-gap 15 of more than 2 or 2 is also provided with between substrate 11 and lower electrode layer 12.In the FBAR structure that the present embodiment provides, multiple air-gap shares upper electrode layer and lower electrode layer, during FBAR work, piezoelectric membrane produces vibration at each air-gap place respectively, thus the stress dispersion that piezoelectric membrane vibration can be produced is to the edge of each air-gap, the stress that each air-gap edge is produced will be very little, thus effectively can improve the stability of whole FBAR structure; Meanwhile, multiple air-gap common electrode layer, it is larger that air-gap entire area can be done, and FBAR can be worked in more under high power environment, effectively can improve the power capacity of FBAR.
In the present embodiment, as shown in Figure 2 A and 2 B, substrate 11 can be provided with multiple obstacle 151, thus enclose each air-gap 15 of formation by the plurality of obstacle 151.In practical application, can be as required, the obstacle of suitable width is set, the 1/3-2 that such as obstacle width can be set to piezoelectric membrane thickness doubly between, so that during the FABR work formed, in the edge of air-gap, stress ability to bear better can be had, increase stability and the reliability of FBAR structure.
In the present embodiment, as shown in Figure 2 A, between lower electrode layer 12 and each air-gap 15, be also provided with supporting layer 16, to improve the stability of whole FBAR structure by this supporting layer 16, increase the mechanical strength of air-gap 15 edge, improve the stress ability to bear of each air-gap 15 edge.
In the present embodiment, the air-gap 15 formed on the substrate 11 can be square structure, such as, can be square, rectangle structure.Particularly, as shown in Figure 2 B, each air-gap 15 in the present embodiment is rectangle structure, and the breadth length ratio of this rectangle structure can be between 1: 1-1: 1.5.
In the present embodiment, formed between each air-gap 15 on the substrate 11 and also can be provided with via hole, particularly, as shown in Figure 2 B, obstacle 151 between adjacent air-gap 15 can offer via hole 152, make conducting between two adjacent air-gaps 15, like this, in FBAR manufacturing process, can be convenient to etching gas or liquid in etching technics flow between each air-gap, wherein, via hole 152 can be the centre position of place obstacle 151, and the width of via hole can be the 1/5-1/3 of obstacle length, avoid via size excessive and affect FBAR service behaviour.
It will be appreciated by those skilled in the art that, above-mentioned stacked on the substrate 11 lower electrode layer 12, piezoelectric membrane 13 and upper electrode layer 14 are set, refer to the surperficial of substrate 11 and along on the direction on this surface vertical, set gradually lower electrode layer 12, piezoelectric membrane 13 and upper electrode layer 14.
It will be understood by those skilled in the art that FBAR that the present embodiment provides is in circuit function, can be equivalent to multiple traditional F BAR in parallel, therefore the present embodiment FBAR can have the power capacity of traditional F BAR cost, and FBAR capacity is greatly improved; Simultaneously, in the FBAR structure that the present embodiment provides, multiple air-gap shares upper electrode layer, piezoelectric membrane and lower electrode layer, make FBAR Stability Analysis of Structures, the power circuit of relatively multiple traditional F BAR, on the basis reaching equal-wattage capacity, less volume can be had, make to use the communication device of the present embodiment FBAR can have less volume and the power capacity of Geng Gao.
The thin film bulk acoustic resonator that the present embodiment provides, there is multiple air-gap structure, each air-gap shares identical upper electrode layer, piezoelectric membrane and lower electrode layer, like this, during FBAR work, the vibration that piezoelectric membrane produces will be distributed on each air-gap structure, and the stress that each air-gap structure edge is produced is all less, effectively can improve stability and the reliability of whole FBAR structure; Simultaneously, because each air-gap shares upper electrode layer, piezoelectric membrane lower electrode layer, the power of FBAR is exactly the power sum that piezoelectric membrane region corresponding to each air-gap produces, and makes FBAR entirety can have higher power capacity, meets in the FBAR application of significant power demand.
The structural representation of the thin film bulk acoustic resonator hollow air-gap that Fig. 3 provides for the embodiment of the present invention two.With above-mentioned Fig. 2 A and Fig. 2 B illustrated embodiment technical scheme unlike, the air-gap be formed in the present embodiment on substrate can be polygonized structure, can be such as pentagon, hexagon, or, also can be regular polygon structure, particularly, as shown in Figure 3, the present embodiment hollow air-gap 15 is hexagonal structure.
The structural representation of the thin film bulk acoustic resonator that Fig. 4 provides for the embodiment of the present invention three.With above-mentioned Fig. 2 A illustrated embodiment technical scheme unlike, the present embodiment hollow air-gap can be the groove structure be arranged on substrate, particularly, as shown in Figure 4, substrate 11 offers the groove structure of more than 2 or 2, this groove structure formed air-gap 15.
Form required air-gap by the mode arranging groove on substrate, effectively can improve the convenience that FBAR makes, reduce cost of manufacture.
It will be appreciated by those skilled in the art that, in the various embodiments described above of the present invention, the structure of air-gap is except can being the regular textures such as said square, polygon, in practical application, also air-gap can be set to other irregular shapes as required, or the structure that various shape combines, does not limit this embodiment of the present invention
The embodiment of the present invention also provides a kind of communication device, this communication device can comprise the FBAR that the invention described above embodiment provides, particularly, this communication device can be filter, duplexer or oscillator, the FBAR that can be provided by the invention described above is connected to form by series, parallel, or is formed by connecting by series and parallel connections combination.Because the FBAR forming this communication device has higher power capacity, the usage quantity of resonator in communication device can be reduced accordingly, improve the power capacity of communication device; Meanwhile, in the present embodiment communication device, FBAR can be equivalent to the FBAR of multiple parallel connection in traditional devices, on the basis of FBAR power capacity with traditional multiple parallel connection, also can reduce the volume of whole communication device.
Also provide a kind of radio-frequency module in the embodiment of the present invention, this radio-frequency module comprises duplexer or multiplexer, and the FBAR that the resonator in duplexer or multiplexer provides for adopting the invention described above embodiment.For radio-frequency module in radio communication base station, embodiment of the present invention technical scheme will be described below.
The structural representation of the radio-frequency module that Fig. 5 A provides for the embodiment of the present invention four; Fig. 5 B is the structural representation of duplexer in Fig. 5 A.The present embodiment radio-frequency module can be applicable to G mobile communication (3rd-generation, 3G) with Long Term Evolution (Long Term Evolution, etc. LTE) in wireless base station, the high power requirements of wireless base station can be met, less volume can be had simultaneously, particularly, as shown in Figure 5A, the present embodiment radio-frequency module can comprise duplexer 10, this duplexer 10 is connected to radio-frequency (RF) receiving circuit 20, radio frequency transmitter circuitry 30 and antenna 40, during Received signal strength, the signal received from antenna 40 can be passed through after duplexer 10 and radio-frequency (RF) receiving circuit 20 process, transfer to corresponding base station signal processor, when transmitting, the signal that base station signal processing unit sends, after caning be passed through radio frequency transmitter circuitry 30 and duplexer 10 process, launches from antenna 40.
In the present embodiment, as shown in Figure 5A, above-mentioned radio-frequency (RF) receiving circuit 20 can comprise the receiving terminal attenuator 201, signal suppressing filter 202 and the low noise amplifier 203 that are electrically connected successively, this low noise amplifier 203 is connected with duplexer 10, and receiving terminal attenuator 201 is connected with the signal processor in base station; Radio frequency transmitter circuitry 30 can comprise transmitting terminal attenuator 301, first power amplifier 302 that is electrically connected successively and the second power amplifier 303, second power amplifier 303 is connected with duplexer 10, and transmitting terminal attenuator 301 is connected with the signal processor in base station.In the present embodiment, radio-frequency (RF) receiving circuit and radio frequency transmitter circuitry can have structure same or similar with radio-frequency module in traditional base station, and the embodiment of the present invention does not limit.
In the present embodiment, the FBAR that the resonator in above-mentioned duplexer 10 can adopt the invention described above embodiment to provide.As shown in Figure 5 B, duplexer 10 is made up of transmitting chain 110, receiver 120, antenna terminal 130 and 1/4th transmission lines 140, wherein, FBAR 140 series and parallel connections provided by the invention described above embodiment in transmitting chain 110 and receiver 120 is formed by connecting.In practical application, as required each FBAR can be formed T-shaped, л type, Γ type or network interference type arrangement circuit, to realize the logical or band-stop response of required band.It will be understood by those skilled in the art that the duplexer in the present embodiment can adopt conventional circuit structure form, is the FBAR that resonator wherein adopts the invention described above embodiment to provide; In addition, above-mentioned FBAR can be equivalent to traditional multiple FBAR and be formed in parallel, and the FBAR that therefore the present embodiment can be provided as required replaces multiple FBAR in parallel in traditional circuit, and can have identical power, and volume is less.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (12)
1. a thin film bulk acoustic resonator, is characterized in that, comprising: substrate, and described substrate has been cascading lower electrode layer, piezoelectric membrane and upper electrode layer, and described lower electrode layer, described piezoelectric membrane and described upper electrode layer form sandwich structure;
The air-gap of more than 2 or 2 is provided with between described substrate and lower electrode layer; Wherein, each air-gap shares described lower electrode layer, described piezoelectric membrane and described upper electrode layer.
2. thin film bulk acoustic resonator according to claim 1, is characterized in that, is provided with multiple obstacle between described substrate and lower electrode layer, and described multiple obstacle encloses and forms described each air-gap.
3. thin film bulk acoustic resonator according to claim 1, is characterized in that, described substrate offers the groove structure of more than 2 or 2, the described air-gap that described groove structure is formed.
4. the thin film bulk acoustic resonator according to Claims 2 or 3, is characterized in that, is provided with via hole between each air-gap.
5. the thin film bulk acoustic resonator according to claim 1,2 or 3, is characterized in that, described air-gap is polygonized structure.
6. thin film bulk acoustic resonator according to claim 5, is characterized in that, described air-gap is regular polygon structure.
7. the thin film bulk acoustic resonator according to claim 1,2 or 3, is characterized in that, described air-gap is square structure.
8. thin film bulk acoustic resonator according to claim 7, is characterized in that, the rectangle structure of described air-gap to be breadth length ratio be 1:1 ~ 1:5.
9. the thin film bulk acoustic resonator according to claim 1,2 or 3, is characterized in that, is also provided with supporting layer between described lower electrode layer and each air-gap.
10. a communication device, is characterized in that, comprises the arbitrary described thin film bulk acoustic resonator of the claims 1 ~ 9.
11. communication devices according to claim 10, is characterized in that, described communication device is filter, duplexer or oscillator.
12. 1 kinds of radio-frequency modules, comprise duplexer or multiplexer, it is characterized in that, the resonator in described duplexer or multiplexer is adopt the arbitrary described thin film bulk acoustic resonator of the claims 1-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210000816.5A CN102545827B (en) | 2012-01-04 | 2012-01-04 | Thin film bulk acoustic resonator, communication device and radio-frequency module |
| PCT/CN2012/078036 WO2013102342A1 (en) | 2012-01-04 | 2012-07-02 | Film bulk acoustic resonator, communication device and radio frequency module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210000816.5A CN102545827B (en) | 2012-01-04 | 2012-01-04 | Thin film bulk acoustic resonator, communication device and radio-frequency module |
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| CN102545827A CN102545827A (en) | 2012-07-04 |
| CN102545827B true CN102545827B (en) | 2015-09-09 |
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| WO (1) | WO2013102342A1 (en) |
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| CN102571027A (en) * | 2012-02-27 | 2012-07-11 | 浙江瑞能通信科技有限公司 | Film bulk acoustic resonator structure based on all metal Bragg reflection layer |
| CN103532516B (en) * | 2013-08-05 | 2017-10-24 | 天津大学 | Body wave resonator and its manufacture method |
| KR101942734B1 (en) * | 2017-05-18 | 2019-01-28 | 삼성전기 주식회사 | Bulk-acoustic wave resonator |
| CN107071672B (en) * | 2017-05-22 | 2020-08-21 | 潍坊歌尔微电子有限公司 | Piezoelectric microphone |
| CN107332561B (en) * | 2017-07-18 | 2021-02-26 | 上海示方科技有限公司 | Signal inquiry device and hydrogen atom frequency standard |
| CN108649920B (en) * | 2017-12-29 | 2021-12-03 | 苏州汉天下电子有限公司 | Piezoelectric acoustic resonator, piezoelectric acoustic wave filter, duplexer, and radio frequency communication module |
| CN109302158B (en) * | 2018-08-01 | 2021-07-16 | 广州市艾佛光通科技有限公司 | Film bulk acoustic resonator and preparation method thereof |
| WO2020163973A1 (en) * | 2019-02-15 | 2020-08-20 | 天津大学 | Air-gap type piezoelectric bulk acoustic wave device heterogeneous integration method, and device thereof |
| CN110166013A (en) * | 2019-06-20 | 2019-08-23 | 杭州左蓝微电子技术有限公司 | A kind of acoustic wave device and preparation method thereof, temprature control method |
| CN110971209B (en) * | 2019-11-04 | 2023-10-20 | 天津大学 | Method for improving power capacity of bulk acoustic wave filter and filter element |
| CN112039491B (en) * | 2020-03-31 | 2022-08-05 | 中芯集成电路（宁波）有限公司 | Thin film piezoelectric acoustic wave filter and manufacturing method thereof |
| CN112039489B (en) * | 2020-01-22 | 2022-08-05 | 中芯集成电路（宁波）有限公司 | Thin film piezoelectric acoustic wave filter and manufacturing method thereof |
| WO2023236332A1 (en) * | 2022-06-07 | 2023-12-14 | Huawei Technologies Co., Ltd. | Plate mode resonator device |
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| WO2013102342A1 (en) | 2013-07-11 |
| CN102545827A (en) | 2012-07-04 |
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