CN216146305U - Bulk acoustic wave filter and semiconductor device - Google Patents
Bulk acoustic wave filter and semiconductor device Download PDFInfo
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- CN216146305U CN216146305U CN202121478326.7U CN202121478326U CN216146305U CN 216146305 U CN216146305 U CN 216146305U CN 202121478326 U CN202121478326 U CN 202121478326U CN 216146305 U CN216146305 U CN 216146305U
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Abstract
The utility model relates to the technical field of filters, and provides a bulk acoustic wave filter and a semiconductor device. The bulk acoustic wave resonator filter comprises an input terminal, an output terminal, a grounding terminal, a plurality of thin film bulk acoustic resonators connected in series and a plurality of thin film bulk acoustic resonators connected in parallel; one end of a sixth film bulk acoustic resonator is connected with the input terminal, a node between two adjacent resonators between the first film bulk acoustic resonator and the fourth film bulk acoustic resonator is sequentially connected with one end of a seventh film bulk acoustic resonator, one end of an eighth film bulk acoustic resonator, one end of a ninth film bulk acoustic resonator, one end of a tenth film bulk acoustic resonator, one end of an eleventh film bulk acoustic resonator and one end of a twelfth film bulk acoustic resonator in parallel, and the other ends of the plurality of film bulk acoustic resonators in parallel are connected with the ground terminal. The filter provided by the utility model can allow signals with specific frequencies to pass through.
Description
Technical Field
The utility model belongs to the technical field of filters, and particularly relates to a bulk acoustic wave filter and a semiconductor device.
Background
In recent years, with the continuous development of 5G wireless communication technology, mobile communication is realized by utilizing higher frequency bands and frequency band recombination, which puts increasing demands on miniaturization, high frequency bandwidth, integration and flexibility of relevant radio frequency components.
Film Bulk Acoustic Resonator (FBAR) filters are gradually replacing traditional surface Acoustic wave filters and ceramic filters by virtue of their excellent characteristics of small size, high resonant frequency, high quality factor, large power capacity, good roll-off effect and the like, and have a larger and larger market share in the field of radio frequency filters, and play a great role in the field of 5G wireless communication radio frequencies.
However, most of the research on the film bulk acoustic resonator filter is focused on the manufacturing method, and the research on the specific structure of the film bulk acoustic resonator filter is less.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a bulk acoustic wave filter and a semiconductor device, and aims to provide a novel layout structure of a film bulk acoustic resonator filter.
In a first aspect, an embodiment of the present invention provides a film bulk acoustic resonator filter with a center frequency of 1200MHz, including an input terminal, an output terminal, a ground terminal, a plurality of series connected film bulk acoustic resonators, and a plurality of parallel connected film bulk acoustic resonators;
the plurality of series thin film bulk acoustic resonators comprise a first thin film bulk acoustic resonator, a second thin film bulk acoustic resonator, a third thin film bulk acoustic resonator and a fourth thin film bulk acoustic resonator which are sequentially connected, and the plurality of series thin film bulk acoustic resonators are connected in series between the input terminal and the output terminal; a fifth film bulk acoustic resonator is connected in parallel at two ends of the fourth film bulk acoustic resonator;
the plurality of film bulk acoustic resonators connected in parallel comprise a sixth film bulk acoustic resonator, a seventh film bulk acoustic resonator, an eighth film bulk acoustic resonator, a ninth film bulk acoustic resonator, a tenth film bulk acoustic resonator, an eleventh film bulk acoustic resonator and a twelfth film bulk acoustic resonator; one end of the sixth film bulk acoustic resonator is connected with the input terminal, a node between two adjacent resonators between the first film bulk acoustic resonator and the fourth film bulk acoustic resonator is sequentially connected with one end of a seventh film bulk acoustic resonator, one end of an eighth film bulk acoustic resonator, one end of a ninth film bulk acoustic resonator, one end of a tenth film bulk acoustic resonator, one end of an eleventh film bulk acoustic resonator and one end of a twelfth film bulk acoustic resonator, the other ends of the plurality of film bulk acoustic resonators connected in parallel are connected with a ground terminal respectively.
The filter in the embodiment of the present invention includes a plurality of thin film bulk acoustic resonators connected in series between an input terminal and an output terminal, and a plurality of thin film bulk acoustic resonators connected in parallel between nodes of the plurality of thin film bulk acoustic resonators connected in series. After the signal passes through the plurality of thin film bulk acoustic resonators connected in series and the plurality of thin film bulk acoustic resonators connected in parallel, the signal with a specific frequency can be allowed to pass through the input terminal and reach the output terminal.
With reference to the first aspect, in one possible implementation manner, the series resonance frequency and the parallel resonance frequency of the plurality of series thin film bulk acoustic resonators are the same; the series resonance frequency and the parallel resonance frequency of the plurality of film bulk acoustic resonators connected in parallel are the same.
With reference to the first aspect, in one possible implementation manner, the series resonance frequency of the plurality of series thin film bulk acoustic resonators is the same as the parallel resonance frequency of the plurality of parallel thin film bulk acoustic resonators.
With reference to the first aspect, in one possible implementation manner, the area of the first thin film bulk acoustic resonator and the area of the second thin film bulk acoustic resonator are 39950 μm2-40050μm2The area of the third film bulk acoustic resonator is 38950 mu m2-39050μm2The area of the fourth film bulk acoustic resonator is 33950 mu m2-34050μm2The area of the fifth film bulk acoustic resonator is 35950 mu m2-36050μm2The areas of the sixth film bulk acoustic resonator, the ninth film bulk acoustic resonator and the tenth film bulk acoustic resonator are 42950 μm2-43050μm2The area of the seventh film bulk acoustic resonator and the area of the eighth film bulk acoustic resonator are 36950 μm2-37050μm2The area of the eleventh film bulk acoustic resonator and the area of the twelfth film bulk acoustic resonator are 26950 [ mu ] m2-27050μm2。
With reference to the first aspect, in a possible implementation manner, the layout of the film bulk acoustic resonator filter mainly includes a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer, and a hole layer, where the difference frequency layer corresponds to only the plurality of parallel film bulk acoustic resonators, and the hole layer is provided with a plurality of release holes.
In some embodiments, the upper electrode layer has a thickness of
The thickness of the lower electrode layer is
The thickness of the piezoelectric layer is
The thickness of the difference frequency layer is
The diameter of the release hole is 15-25 μm.
In some embodiments, the center lines of the first to fourth thin film bulk acoustic resonators are located on a first straight line, the center lines of the fifth, sixth, ninth, and tenth thin film bulk acoustic resonators are located on a second straight line, the second straight line is located on a first side of the first straight line, and the first straight line is parallel to the second straight line; distances from the centers of the first to fourth film bulk acoustic resonators to a straight line where the input terminal and the output terminal are located are smaller than a threshold value; the seventh film bulk acoustic resonator, the eighth film bulk acoustic resonator, the eleventh film bulk acoustic resonator and the twelfth film bulk acoustic resonator are located on a second side of the first straight line, and the first side is opposite to the second side.
In some embodiments, each of the film bulk acoustic resonators has a plurality of release channels, and each of the release channels corresponds to at least one of the release holes.
With reference to the first aspect, in a possible implementation manner, the layout of the thin film bulk acoustic resonator filter includes a first layout area to a seventeenth layout area;
the first layout area, the third layout area and the fifth layout area are grounding terminal layout areas, the second layout area is a layout area of an input terminal, and the fourth layout area is a layout area of an output terminal; the third layout area is positioned at the lower part of the layout of the filter, and the first layout area, the fifth layout area, the second layout area and the fourth layout area are respectively arranged at two sides of the layout of the filter;
the sixth version area to the tenth version area are the first film bulk acoustic resonator to the fifth film bulk acoustic resonator respectively; the eleventh layout area to the seventeenth layout area are the sixth film bulk acoustic resonator to the twelfth film bulk acoustic resonator, respectively;
the sixth layout area to the ninth layout area are positioned on a first straight line between the second layout area and the fourth layout area; the tenth layout area is positioned at the lower part of the ninth layout area, and is positioned on a second straight line together with the eleventh layout area, the fourteenth layout area and the fifteenth layout area, and the second straight line is positioned on one side of the first straight line; the twelfth version area, the thirteenth version area, the sixteenth version area and the seventeenth version area are positioned on the other side of the first straight line.
In a second aspect, an embodiment of the present invention further provides a semiconductor device, including the bulk acoustic wave filter described in any one of the above.
Drawings
Fig. 1 is a schematic circuit diagram of a bulk acoustic wave filter according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a layout structure of a bulk acoustic wave filter according to an embodiment of the present invention;
fig. 3 is a schematic layout view of a sacrificial layer of the bulk acoustic wave filter shown in fig. 2;
fig. 4 is a layout diagram of a lower electrode layer of the bulk acoustic wave filter shown in fig. 2;
fig. 5 is a layout diagram of an upper electrode layer of the bulk acoustic wave filter shown in fig. 2;
FIG. 6 is a layout diagram of a difference frequency level representation of the bulk acoustic wave filter shown in FIG. 2;
fig. 7 is a layout schematic diagram of an aperture layer of the bulk acoustic wave filter shown in fig. 2;
fig. 8 is an amplitude-frequency characteristic curve of the bulk acoustic wave filter according to the embodiment of the present invention.
In the figure: 11-input terminal, 12-output terminal, 21-first film bulk acoustic resonator, 22-second film bulk acoustic resonator, 23-third film bulk acoustic resonator, 24-fourth film bulk acoustic resonator, 25-fifth film bulk acoustic resonator, 31-sixth film bulk acoustic resonator, 32-seventh film bulk acoustic resonator, 33-eighth film bulk acoustic resonator, 34-ninth film bulk acoustic resonator, 35-tenth film bulk acoustic resonator, 36-eleventh film bulk acoustic resonator, 37-twelfth film bulk acoustic resonator, 41-release hole.
Detailed Description
The 5G technology promotes the comprehensive upgrade of a radio frequency system of a mobile phone terminal, and the requirement of a filter is greatly increased for adding a communication function of a new frequency band based on the multiplied increase of the number of antenna channels of a base station. The film bulk acoustic resonator filter can work in a high frequency band of 6 GHz-60 GHz, supports a steep filtering curve of high-challenge frequency band allocation and has good out-of-band rejection capability. In addition, the low loss characteristic of the film bulk acoustic resonator filter can compensate the higher loss of a plurality of frequency bands integrated at the front end of the radio frequency, improve the signal receiving capability and the service life of a battery, and has become a new momentum of 5G mobile communication.
However, most of the current researches on the film bulk acoustic resonator filter are focused on the preparation method, and the researches on the specific structure are less. There is a need to use a filter with a center frequency of 1200MHz, with a 1dB bandwidth greater than 25MHz, requiring more than 35dBc rejection at 1140MHz and 1260 MHz.
In view of the above problems, embodiments of the present invention provide a bulk acoustic wave filter including an input terminal, an output terminal, a ground terminal, a plurality of thin film bulk acoustic resonators connected in series, and a plurality of thin film bulk acoustic resonators connected in parallel. The film bulk acoustic resonators connected in series comprise a first film bulk acoustic resonator, a second film bulk acoustic resonator, a third film bulk acoustic resonator and a fourth film bulk acoustic resonator which are connected in sequence, and the film bulk acoustic resonators connected in series are connected between an input terminal and an output terminal. And the fifth film bulk acoustic resonator is connected in parallel at two ends of the fourth film bulk acoustic resonator. The plurality of film bulk acoustic resonators connected in parallel include a sixth film bulk acoustic resonator, a seventh film bulk acoustic resonator, an eighth film bulk acoustic resonator, a ninth film bulk acoustic resonator, a tenth film bulk acoustic resonator, an eleventh film bulk acoustic resonator, and a twelfth film bulk acoustic resonator. One end of the sixth film bulk acoustic resonator is connected with the input terminal, a node between two adjacent resonators between the first film bulk acoustic resonator and the fourth film bulk acoustic resonator is sequentially connected with one end of the seventh film bulk acoustic resonator, one end of the eighth film bulk acoustic resonator, one end of the ninth film bulk acoustic resonator, one end of the tenth film bulk acoustic resonator, one end of the eleventh film bulk acoustic resonator and one end of the twelfth film bulk acoustic resonator, and the other ends of the plurality of film bulk acoustic resonators connected in parallel are connected with the ground terminal.
The film bulk acoustic resonator filter includes a plurality of film bulk acoustic resonators connected in series between an input terminal and an output terminal, and a plurality of film bulk acoustic resonators connected in parallel between nodes of the plurality of film bulk acoustic resonators connected in series. When the signals pass through the input terminal and pass through the plurality of thin film bulk acoustic resonators connected in series and the plurality of thin film bulk acoustic resonators connected in parallel, filtering of the signals in a specific frequency band can be realized, and therefore the signals with specific central frequency are output.
Fig. 1 shows a schematic circuit diagram of a bulk acoustic wave filter according to an embodiment of the present invention. Referring to fig. 1, the bulk acoustic wave filter includes an input terminal 11, an output terminal 12, a ground terminal, a plurality of thin film bulk acoustic resonators connected in series, and a plurality of thin film bulk acoustic resonators connected in parallel. The plurality of series thin film bulk acoustic resonators include a first thin film bulk acoustic resonator 21, a second thin film bulk acoustic resonator 22, a third thin film bulk acoustic resonator 23 and a fourth thin film bulk acoustic resonator 24 which are connected in sequence, and a fifth thin film bulk acoustic resonator 25 is connected in parallel at two ends of the fourth thin film bulk acoustic resonator 24. The plurality of parallel film bulk acoustic resonators include a sixth film bulk acoustic resonator 31, a seventh film bulk acoustic resonator 32, an eighth film bulk acoustic resonator 33, a ninth film bulk acoustic resonator 34, a tenth film bulk acoustic resonator 35, an eleventh film bulk acoustic resonator 36, and a twelfth film bulk acoustic resonator 37.
Among them, the first to fourth thin film bulk acoustic resonators 21 to 24 are connected in series between the input terminal 11 and the output terminal 12. And the first to fifth thin film bulk acoustic resonators 21 to 25 have the same first series resonance frequency and first parallel resonance frequency.
As described above, one end of the sixth thin film bulk acoustic resonator 31 among the plurality of thin film bulk acoustic resonators connected in parallel is connected to the input terminal 11. The nodes between two adjacent resonators between the first thin film bulk acoustic resonator 21 and the fourth thin film bulk acoustic resonator 24 are respectively connected with one ends of a seventh thin film bulk acoustic resonator 32 and an eighth thin film bulk acoustic resonator 33, a ninth thin film bulk acoustic resonator 34 and a tenth thin film bulk acoustic resonator 35, an eleventh thin film bulk acoustic resonator 36 and a twelfth thin film bulk acoustic resonator 37 in sequence, and the other ends of the plurality of thin film bulk acoustic resonators connected in parallel are connected with a ground terminal. Specifically, the seventh film bulk acoustic resonator 32 and the eighth film bulk acoustic resonator 33 are connected in parallel, the ninth film bulk acoustic resonator 34 and the tenth film bulk acoustic resonator 35 are connected in parallel, and the eleventh film bulk acoustic resonator 36 and the twelfth film bulk acoustic resonator 37 are connected in parallel, so that the area of a single film bulk acoustic resonator is reduced, the film bulk acoustic resonator is in a range in which the process is easy to implement, and the reliability of the filter is improved.
The center lines of the first to fourth thin film bulk acoustic resonators 21 to 24 are located on a first straight line; the center lines of the fifth thin film bulk acoustic resonator 25, the sixth thin film bulk acoustic resonator 31, the ninth thin film bulk acoustic resonator 34, and the tenth thin film bulk acoustic resonator 35 are located on a second straight line, the second straight line is located on the first side of the first straight line, and the first straight line and the second straight line are parallel to each other. The seventh thin film bulk acoustic resonator 32, the eighth thin film bulk acoustic resonator 33, the eleventh thin film bulk acoustic resonator 36, and the twelfth thin film bulk acoustic resonator 37 are located on the second side of the first straight line. Wherein the first side and the second side are located on both sides of the first straight line. The distance from the center of the first to fourth thin film bulk acoustic resonators 21 to 24 to the straight line where the input terminal 11 and the output terminal 12 are located is smaller than a threshold value, where the threshold value may be the size of one-half resonator or the size of one-quarter resonator. Wherein the size of the resonator is the largest size of the resonator in the direction perpendicular to the above-mentioned straight line in the sacrificial layer layout when the resonator is manufactured.
Illustratively, in the embodiment of the present invention, the first series resonance frequency of the plurality of series thin film bulk acoustic resonators is the same as the second parallel resonance frequency of the plurality of parallel thin film bulk acoustic resonators, so as to form a specific center frequency.
As shown in fig. 2, the embodiment of the present invention provides an overall layout of a bulk acoustic wave filter with a frequency center of 1200 MHz. The total layout of the filter in fig. 2 includes first through seventeenth layout areas. The first layout area 201, the third layout area 203, and the fifth layout area 205 are ground terminal layout areas, the second layout area 202 is a layout area of the input terminal 11, and the fourth layout area 204 is a layout area of the output terminal 12. The third layout area 203 is located at the lower part of the layout of the filter, and the first and fifth layout areas 201 and 205, and the second and fourth layout areas 202 and 204 are respectively disposed at both sides of the layout of the filter.
The sixth layout area 206 to the tenth layout area 210 are the first thin film bulk acoustic resonator 21 to the fifth thin film bulk acoustic resonator 25, respectively. The eleventh layout area 211 to the seventeenth layout area 217 are the sixth thin film bulk acoustic resonator 31 to the twelfth thin film bulk acoustic resonator 37, respectively.
Wherein the sixth version area 206 through the ninth version area 209 are located on a first straight line (e.g., a chain line in fig. 2) between the second version area 202 and the fourth version area 204. The tenth layout area 210 is located at the lower part of the ninth layout area 209, and is located on a second straight line with the eleventh layout area 211, the fourteenth layout area 214 and the fifteenth layout area 215, and the second straight line is located at one side of the first straight line; the twelfth, thirteenth, sixteenth and seventeenth version areas 212, 213, 216 and 217 are located at the other side of the first line.
In some embodiments, the area of the film bulk acoustic resonator is controlled to be 4000 μm2-80000 μm2 in consideration of the easiness of process implementation. In the same circuit, the area difference of each film bulk acoustic resonator in the circuit should be as small as possible in the design of each film bulk acoustic resonator, and the difference is generally less than 4 times.
In some embodiments, to obtain a bulk acoustic wave filter with a specific center frequency, the areas of the first thin film bulk acoustic resonator and the second thin film bulk acoustic resonator can be adjusted to 39950 μm2-40050μm2The third film bulk acoustic resonator has an area of 38950 μm2-39050μm2The fourth film bulk acoustic resonator has an area of 33950 μm2-34050μm2The fifth film bulk acoustic resonator has an area of 35950 μm2-36050μm2The sixth film bulk acoustic resonator, the ninth film bulk acoustic resonator and the tenth film bulk acoustic resonator have an area of 42950 μm2-43050μm2The area of the seventh film bulk acoustic resonator and the area of the eighth film bulk acoustic resonator are 36950 μm2-37050μm2The area of the eleventh film bulk acoustic resonator and the area of the twelfth film bulk acoustic resonator are 26950 mu m2-27050μm2。
In some embodiments, the layout of the bulk acoustic wave filter mainly includes a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer, and a hole layer. The difference frequency layer corresponds to the plurality of film bulk acoustic resonators connected in parallel, and the plurality of film bulk acoustic resonators connected in series do not have the difference frequency layer. The difference frequency layer is used for realizing the frequency difference between the film bulk acoustic resonators connected in parallel and the film bulk acoustic resonators connected in series, so that a filter is formed, and the filtering of the phase specific frequency is realized. In general, the second series resonance frequency and the second parallel resonance frequency of the thin film bulk acoustic resonators connected in parallel are lower than the first series resonance frequency and the first parallel resonance frequency of the thin film bulk acoustic resonators connected in series, and the first series resonance frequency is equal to the second parallel resonance frequency.
Specifically, the film bulk acoustic resonator may be a pentagon, each of the resonators has 5 sides, and the resonators are connected to each other by one side of each resonator.
In order to form an air cavity of the film bulk acoustic resonator and realize the reflection of acoustic waves, an orifice layer is specially arranged, a plurality of release holes are formed in the orifice layer, and each release channel of each film bulk acoustic resonator at least corresponds to one release hole. Specifically, the diameter of the release hole is 15 μm to 25 μm.
For example, each resonator may have a plurality of release channels (e.g., five), one release hole for each release channel, and release gas may enter the release channels through the release holes, then enter the sacrificial layer region to etch the sacrificial layer material away into gas, and then be exhausted through the release channels and the release holes. In addition, if the space of the filter is tight, two release channels can share one release hole. In addition, in the probe test area, a probe (for example, a GSG probe) needs to be used for testing the chip, so that the piezoelectric layer needs to be etched away, and the lower electrode is exposed for testing.
In some embodiments, the thicknesses of the upper electrode, the lower electrode, and the piezoelectric layer may be adjusted to achieve a particular center frequency by further adjusting the resonator area.
Illustratively, to obtain a filter having a center frequency of 1200MHz, the upper electrode layer has a thickness of
The thickness of the lower electrode layer is
The thickness of the piezoelectric layer is
The thickness of the difference frequency layer is
The diameter of the release hole is 15-25 μm.
Specifically, the layout to be used in the process of manufacturing the bulk acoustic wave filter having the center frequency of 1200MHz mainly includes a layout of the sacrificial layer, a layout of the lower electrode, a layout of the upper electrode, a layout of the difference frequency layer, and a layout of the hole layer, as shown in fig. 3 to 7.
Fig. 3 is a layout of a sacrifice layer in which the first to twelfth thin film bulk acoustic resonators 21 to 37 are respectively provided.
The first sacrificial region layout 301 to the fifth sacrificial region layout 305 correspond to the first thin film bulk acoustic resonator 21 to the fifth thin film bulk acoustic resonator 25, respectively. The sixth sacrificial area layout 306 to the twelfth sacrificial area layout 312 correspond to the seventh thin film bulk acoustic resonator 31 to the twelfth thin film bulk acoustic resonator 37, respectively, which are connected in parallel.
Specifically, each resonator is provided with 5 sides, and the part of each resonator extending out of the horn shape is a release channel, and each resonator may have a plurality of release channels, and each resonator is provided with 5 release channels in the present application. The released gas enters the release channel through the release hole, then enters the sacrificial layer area to corrode the sacrificial layer material to become gas, and then is discharged through the release channel and the release hole.
Fig. 4 is a layout of the lower electrode layer, including a layout of the input terminal 11, the output terminal 12, and the ground terminal.
The layout of the lower electrode layer includes six layout areas, wherein a first lower electrode layout area 401, a third lower electrode layout area 403, and a fifth lower electrode layout area 405 are connected to the ground terminal, a second lower electrode layout area 402 is connected to the input terminal 11, and a fourth lower electrode layout area 404 is connected to the output terminal 12.
Specifically, the first lower electrode layout area 401 corresponds to the seventh thin film bulk acoustic resonator 32 and the eighth thin film bulk acoustic resonator 33, the second lower electrode layout area 402 corresponds to the first thin film bulk acoustic resonator 21 and the sixth thin film bulk acoustic resonator 31, the fourth lower electrode layout area 404 corresponds to the fourth thin film bulk acoustic resonator 24 and the fifth thin film bulk acoustic resonator 25, the fifth lower electrode layout area 405 corresponds to the eleventh thin film bulk acoustic resonator 36 and the twelfth thin film bulk acoustic resonator 37, and the sixth lower electrode layout area 406 corresponds to the second thin film bulk acoustic resonator 22, the third thin film bulk acoustic resonator 23, the ninth thin film bulk acoustic resonator 34, and the tenth thin film bulk acoustic resonator 35.
Fig. 5 is a layout of the upper electrode layer, which includes a first upper electrode layout area 501, a second upper electrode layout area 502, a third upper electrode layout area 503, and a fourth upper electrode layout area 504. The first upper electrode layout area 501 corresponds to the first thin film bulk acoustic resonator 21, the second thin film bulk acoustic resonator 22, the seventh thin film bulk acoustic resonator 32, and the eighth thin film bulk acoustic resonator 33, the second upper electrode layout area 502 corresponds to the sixth thin film bulk acoustic resonator 31, and the third upper electrode layout area 503 corresponds to the ninth thin film bulk acoustic resonator 34 and the tenth thin film bulk acoustic resonator 35. The fourth upper electrode layout area 504 corresponds to the third thin film bulk acoustic resonator 23, the fourth thin film bulk acoustic resonator 24, the eleventh thin film bulk acoustic resonator 36, and the twelfth thin film bulk acoustic resonator 37.
Fig. 6 is a layout of a difference frequency layer, which includes a first difference frequency layout region 601 corresponding to the sixth thin film bulk acoustic resonator 31, a second difference frequency layout region 602 corresponding to the seventh thin film bulk acoustic resonator 32, a third difference frequency layout region 603 corresponding to the eighth thin film bulk acoustic resonator 33, a fourth difference frequency layout region 604 corresponding to the ninth thin film bulk acoustic resonator 34, a fifth difference frequency layout region 605 corresponding to the tenth thin film bulk acoustic resonator 35, a sixth difference frequency layout region 606 corresponding to the eleventh thin film bulk acoustic resonator 36, and a seventh difference frequency layout region 607 corresponding to the twelfth thin film bulk acoustic resonator 37.
Fig. 7 is a layout of an aperture layer that includes a plurality of release apertures 41, surrounding each resonator. One for each discharge hole 41. The released gas enters the release channels through the release holes 41 and then enters the sacrificial layer area to corrode the sacrificial layer material into gas, and then is discharged through the release channels and the release holes 41. In addition, in the probe test area on the hole layer layout, if a probe (for example, a GSG probe) is required to be used for testing the chip, the piezoelectric layer needs to be etched away, and the lower electrode GSG is exposed for testing.
In this embodiment, the 1200MHz bulk acoustic wave filter prepared as described above is tested, and the test result is shown in fig. 8. Curve 1 is the variation of S (2,1) with frequency (left vertical axis) of the film bulk acoustic resonator filter. Curve 2 is the return loss (right vertical axis) of S (1,1) of the thin film bulk acoustic resonator filter, and curve 3 is the return loss (right vertical axis) of S (2,2) of the thin film bulk acoustic resonator filter. As can be seen from fig. 8, the 1dB bandwidth is about 62MHz with 40dBc and 42dBc rejection at 1140MHz and 1260MHz, respectively.
The embodiment of the utility model also provides a bulk acoustic wave filter, which comprises any one of the bulk acoustic wave filters. All technical effects of the bulk acoustic wave filter are achieved, and are not described herein again.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A bulk acoustic wave filter is characterized by comprising an input terminal, an output terminal, a grounding terminal, a plurality of series thin film bulk acoustic resonators and a plurality of parallel thin film bulk acoustic resonators;
the plurality of series thin film bulk acoustic resonators comprise a first thin film bulk acoustic resonator, a second thin film bulk acoustic resonator, a third thin film bulk acoustic resonator and a fourth thin film bulk acoustic resonator which are sequentially connected, and the plurality of series thin film bulk acoustic resonators are connected in series between the input terminal and the output terminal; a fifth film bulk acoustic resonator is connected in parallel at two ends of the fourth film bulk acoustic resonator;
the plurality of film bulk acoustic resonators connected in parallel comprise a sixth film bulk acoustic resonator, a seventh film bulk acoustic resonator, an eighth film bulk acoustic resonator, a ninth film bulk acoustic resonator, a tenth film bulk acoustic resonator, an eleventh film bulk acoustic resonator and a twelfth film bulk acoustic resonator; one end of the sixth film bulk acoustic resonator is connected with the input terminal, a node between two adjacent resonators between the first film bulk acoustic resonator and the fourth film bulk acoustic resonator is sequentially connected with one end of a seventh film bulk acoustic resonator, one end of an eighth film bulk acoustic resonator, one end of a ninth film bulk acoustic resonator, one end of a tenth film bulk acoustic resonator, one end of an eleventh film bulk acoustic resonator and one end of a twelfth film bulk acoustic resonator in parallel, and the other ends of the plurality of film bulk acoustic resonators in parallel are connected with a grounding terminal.
2. The bulk acoustic wave filter according to claim 1, wherein the series resonance frequency and the parallel resonance frequency of the plurality of series thin film bulk acoustic resonators are the same; the series resonance frequency and the parallel resonance frequency of the plurality of film bulk acoustic resonators connected in parallel are the same.
3. The bulk acoustic wave filter according to claim 1 or 2, wherein the series resonance frequency of the plurality of series thin film bulk acoustic resonators is the same as the parallel resonance frequency of the plurality of parallel thin film bulk acoustic resonators.
4. The bulk acoustic wave filter according to claim 1, wherein the first thin film bulk acoustic resonator and the second thin film bulk acoustic resonator have an area of 39950 μm2-40050μm2The area of the third film bulk acoustic resonator is 38950 mu m2-39050μm2The area of the fourth film bulk acoustic resonator is 33950 mu m2-34050μm2The area of the fifth film bulk acoustic resonator is 35950 mu m2-36050μm2The sixth thin film bulk acoustic resonator, the ninth thin film bulk acoustic resonator, and the tenth thin film bulk acoustic waveThe area of the resonator is 42950 μm2-43050μm2The area of the seventh film bulk acoustic resonator and the area of the eighth film bulk acoustic resonator are 36950 μm2-37050μm2The area of the eleventh film bulk acoustic resonator and the area of the twelfth film bulk acoustic resonator are 26950 [ mu ] m2-27050μm2。
5. The bulk acoustic wave filter according to claim 1, wherein the layout of the thin film bulk acoustic resonator filter mainly includes a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer, and an aperture layer, the difference frequency layer corresponds to only the plurality of thin film bulk acoustic resonators connected in parallel, and the aperture layer has a plurality of release apertures formed therein.
6. The bulk acoustic wave filter according to claim 5, wherein the upper electrode layer has a thickness of
The thickness of the lower electrode layer is
The thickness of the piezoelectric layer is
The thickness of the difference frequency layer is
The diameter of the release hole is 15-25 μm.
7. The bulk acoustic wave filter according to claim 1, wherein the center lines of the first to fourth thin film bulk acoustic resonators are located on a first straight line, the center lines of the fifth, sixth, ninth, and tenth thin film bulk acoustic resonators are located on a second straight line, the second straight line is located on a first side of the first straight line, and the first straight line is parallel to the second straight line; distances from the centers of the first to fourth film bulk acoustic resonators to a straight line where the input terminal and the output terminal are located are smaller than a threshold value; the seventh film bulk acoustic resonator, the eighth film bulk acoustic resonator, the eleventh film bulk acoustic resonator and the twelfth film bulk acoustic resonator are located on a second side of the first straight line, and the first side is opposite to the second side.
8. The bulk acoustic wave filter according to claim 5, wherein each of the thin film bulk acoustic resonators has a plurality of release channels, and each of the release channels corresponds to at least one of the release holes.
9. The bulk acoustic wave filter according to claim 1, wherein the layout of the thin film bulk acoustic resonator filter includes first to seventeenth layout areas;
the first layout area, the third layout area and the fifth layout area are grounding terminal layout areas, the second layout area is a layout area of an input terminal, and the fourth layout area is a layout area of an output terminal; the third layout area is positioned at the lower part of the layout of the filter, and the first layout area, the fifth layout area, the second layout area and the fourth layout area are respectively arranged at two sides of the layout of the filter;
the sixth version area to the tenth version area are the first film bulk acoustic resonator to the fifth film bulk acoustic resonator respectively; the eleventh layout area to the seventeenth layout area are the sixth film bulk acoustic resonator to the twelfth film bulk acoustic resonator, respectively;
the sixth layout area to the ninth layout area are positioned on a first straight line between the second layout area and the fourth layout area; the tenth layout area is positioned at the lower part of the ninth layout area, and is positioned on a second straight line together with the eleventh layout area, the fourteenth layout area and the fifteenth layout area, and the second straight line is positioned on one side of the first straight line; the twelfth version area, the thirteenth version area, the sixteenth version area and the seventeenth version area are positioned on the other side of the first straight line.
10. A semiconductor device comprising the bulk acoustic wave filter according to any one of claims 1 to 9.
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