CN216145754U - Band-pass filter - Google Patents
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- CN216145754U CN216145754U CN202121483742.6U CN202121483742U CN216145754U CN 216145754 U CN216145754 U CN 216145754U CN 202121483742 U CN202121483742 U CN 202121483742U CN 216145754 U CN216145754 U CN 216145754U
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Abstract
The utility model relates to the technical field of filtering, and provides a band-pass filter. The band-pass filter comprises an input end, an output end, a grounding end, a plurality of serial arm resonators and a plurality of parallel arm resonators; the plurality of string-arm resonators include first to seventh resonators sequentially connected in series between the input terminal and the output terminal; the plurality of parallel-arm resonators include an eighth resonator, a ninth resonator, a tenth resonator and an eleventh resonator, one end of the eighth resonator is connected between the first resonator and the second resonator, one end of the ninth resonator is connected between the third resonator and the fourth resonator, one end of the tenth resonator is connected between the fifth resonator and the sixth resonator, one end of the eleventh resonator is connected between the seventh resonator and the output end, and the other ends of the eighth resonator, the ninth resonator, the tenth resonator and the eleventh resonator are all connected with a ground terminal. The band pass filter provides a novel structure of the FBAR band pass filter.
Description
Technical Field
The utility model belongs to the technical field of filters, and particularly relates to a band-pass filter.
Background
In recent years, with the continuous development of 5G wireless communication technology, mobile communication is realized by utilizing higher frequency bands and frequency band recombination, which puts increasing demands on miniaturization, high frequency bandwidth, integration and flexibility of relevant radio frequency components.
The band-pass filter of a Film Bulk Acoustic Resonator (FBAR) is gradually replacing the traditional surface Acoustic wave filter and ceramic filter by virtue of its excellent characteristics of small size, high resonant frequency, high quality factor, large power capacity, good roll-off effect and the like, and occupies a larger and larger market share in the field of radio frequency filters, and plays a great role in the field of 5G wireless communication radio frequency.
However, most of the existing research on the FBAR band pass filter is focused on the preparation method, and the research on the specific structure of the FBAR band pass filter is less.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a band-pass filter, aiming at providing a novel structure of an FBAR band-pass filter, which can allow a signal with a specific frequency to pass through.
In a first aspect, an embodiment of the present invention provides a bandpass filter with a center frequency of 1300MHz, including: the device comprises an input end, an output end, a grounding end, a plurality of serial arm resonators and a plurality of parallel arm resonators;
the plurality of string-arm resonators include a first resonator, a second resonator, a third resonator, a fourth resonator, a fifth resonator, a sixth resonator and a seventh resonator which are sequentially connected in series between the input end and the output end;
the plurality of parallel-arm resonators include an eighth resonator, a ninth resonator, a tenth resonator and an eleventh resonator, one end of the eighth resonator is connected between the first resonator and the second resonator, one end of the ninth resonator is connected between the third resonator and the fourth resonator, one end of the tenth resonator is connected between the fifth resonator and the sixth resonator, one end of the eleventh resonator is connected between the seventh resonator and the output terminal, and the other ends of the eighth resonator, the ninth resonator, the tenth resonator and the eleventh resonator are all connected to the ground terminal.
The band-pass filter in the embodiment of the utility model comprises a serial arm resonator and a parallel arm resonator which are arranged between an input end and an output end, wherein the serial arm resonator and the parallel arm resonator respectively comprise a plurality of resonators, the serial arm resonator except a first resonator is connected with one end of one resonator in the parallel arm resonator at intervals of two resonators, and the other end of each resonator in the parallel arm resonator is connected with a grounding end. And signals flow into the serial-arm resonator and the parallel-arm resonator through the input end, so that the filtering of the specific frequency band of the signals is realized.
With reference to the first aspect, in one possible implementation manner, the series resonance frequency and the parallel resonance frequency of each of the plurality of series-arm resonators are the same, and the series resonance frequency and the parallel resonance frequency of each of the plurality of parallel-arm resonators are the same.
With reference to the first aspect, in one possible implementation manner, the series resonance frequency of the plurality of string-arm resonators is the same as the parallel resonance frequency of the plurality of parallel-arm resonators. The series resonance frequency of the plurality of series-arm resonators is the same as the parallel resonance frequency of the plurality of parallel-arm resonators, and the center frequency of the band-pass filter is formed.
With reference to the first aspect, in one possible implementation manner, the areas of the first resonator and the tenth resonator are both 63000 ± 50 μm2The area of the second resonator is 66000 +/-50 mu m2The area of the third resonator is 64000 +/-50 mu m2The areas of the fourth resonator, the fifth resonator and the sixth resonator are 68000 +/-50 mu m2The area of the seventh resonator is 65000 +/-50 mu m2The area of the eighth resonator is 56000 + -50 μm2The area of the ninth resonator is 58500 +/-50 mu m2The area of the eleventh resonator is 33000 +/-50 mu m2The area of the resonator is the coincidence area of the upper electrode and the lower electrode of the parallel plate capacitor of the resonator.
With reference to the first aspect, in a possible implementation manner, the layout of the bandpass filter sequentially includes a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer, and a hole layer, where the difference frequency layer corresponds to the multiple parallel-arm resonators, the multiple series-arm resonators do not have the difference frequency layer, the hole layer is provided with multiple release holes, each resonator is provided with multiple release channels, and each release channel corresponds to at least one release hole.
With reference to the first aspect, in one possible implementation manner, the band pass filter further includes a piezoelectric layer.
Wherein the piezoelectric layer may cover the entire band-pass filter chip.
In some embodiments, the upper electrode has a thickness of
The thickness of the lower electrode layer is
The thickness of the piezoelectric layer is
The thickness of the difference frequency layer is
Illustratively, the diameter of the release holes may be 15 μm to 25 μm.
Wherein each resonator may have a plurality of release channels (e.g. five), each release channel corresponding to one release hole, and release gas enters the release channel through the release hole, then enters the sacrificial layer to corrode the sacrificial layer material into gas, and then is discharged through the release channel and the release hole. In addition, if the space of the band pass filter is tight, two release channels can share one release hole. In addition, in the probe test area, a probe (for example, a GSG probe) needs to be used for testing the chip, so that the piezoelectric layer needs to be etched away, and the lower electrode is exposed for testing.
In some embodiments, the first to seventh resonators are sequentially arranged in a zigzag pattern between the input terminal and the output terminal, the eighth and ninth resonators are located on one side of the first to seventh resonators, and the tenth and eleventh resonators are located on the other side of the first to seventh resonators.
Illustratively, the zigzag arrangement includes: the centers of the first resonator, the third resonator, the fifth resonator and the seventh resonator are located on a first straight line, the centers of the second resonator, the fourth resonator and the sixth resonator are located on a second straight line, the first straight line and the second straight line are parallel, and the connecting lines of the centers of any three adjacent resonators in the first resonator to the seventh resonator form a V shape.
Drawings
FIG. 1 is a schematic circuit diagram of a bandpass filter according to an embodiment of the utility model;
fig. 2 is a schematic structural diagram of a layout of a bandpass filter provided in the embodiment of the present invention;
fig. 3 is a layout diagram of a sacrificial layer of the bandpass filter shown in fig. 2;
FIG. 4 is a layout diagram of a lower electrode layer of the bandpass filter shown in FIG. 2;
fig. 5 is a layout diagram of an upper electrode layer of the band pass filter shown in fig. 2;
FIG. 6 is a schematic layout diagram of a difference frequency layer of the band-pass filter shown in FIG. 2;
FIG. 7 is a layout diagram of an aperture layer of the bandpass filter shown in FIG. 2;
fig. 8 is an amplitude-frequency characteristic curve of the bandpass filter according to the embodiment of the utility model.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model.
The FBAR band-pass filter plays an important role in the communication field as an important member of a piezoelectric device, has the excellent characteristics of small size, high resonant frequency, high quality factor, large power capacity, good roll-off effect and the like, gradually replaces the traditional surface acoustic wave filter and ceramic filter, and plays a great role in the radio frequency field of wireless communication. However, most of the existing research on the FBAR band pass filter is focused on the preparation method, and the research on the specific structure of the FBAR band pass filter is less. Moreover, a band-pass filter with a center frequency of 1300MHz is required for certain engineering application, the 1dB bandwidth of the band-pass filter is more than 30MHz, and the band-pass filter is required to restrain more than 35dBc at 1240MHz and 1360 MHz.
Based on the above problem, the embodiments of the present invention provide a band-pass filter. The band pass filter may include an input terminal, an output terminal, a ground terminal, a plurality of series-arm resonators, and a plurality of parallel-arm resonators. The plurality of series-arm resonators include a first resonator, a second resonator, a third resonator, a fourth resonator, a fifth resonator, a sixth resonator, and a seventh resonator, which are connected in series in this order between the input terminal and the output terminal. The plurality of parallel-arm resonators comprise an eighth resonator, a ninth resonator, a tenth resonator and an eleventh resonator, one end of the eighth resonator is connected between the first resonator and the second resonator, one end of the ninth resonator is connected between the third resonator and the fourth resonator, one end of the tenth resonator is connected between the fifth resonator and the sixth resonator, one end of the eleventh resonator is connected between the seventh resonator and the output end, and the other ends of the eighth resonator, the ninth resonator, the tenth resonator and the eleventh resonator are all connected with a grounding end.
The band-pass filter comprises a series arm resonator and a parallel arm resonator which are arranged between an input end and an output end, wherein the series arm resonator and the parallel arm resonator respectively comprise a plurality of resonators, the series arm resonator is connected with one end of one resonator in the parallel arm resonator at intervals except a first resonator, and the other end of each resonator in the parallel arm resonator is connected with a grounding end. And signals flow into the serial-arm resonator and the parallel-arm resonator through the input end, so that the filtering of the specific frequency band of the signals is realized.
Fig. 1 shows a schematic circuit diagram of a bandpass filter provided by an embodiment of the utility model. Referring to fig. 1, the band pass filter may include an input terminal Port _1, an output terminal Port _2, a ground terminal GND, a plurality of series arm resonators, and a plurality of parallel arm resonators. The plurality of string-arm resonators may include a first resonator X1, a second resonator X2, a third resonator X3, a fourth resonator X4, a fifth resonator X5, a sixth resonator X6, and a seventh resonator X7. The plurality of parallel-arm resonators may include an eighth resonator X8, a ninth resonator X9, a tenth resonator X10, and an eleventh resonator X11.
Specifically, the first resonator X1, the second resonator X2, the third resonator X3, the fourth resonator X4, the fifth resonator X5, the sixth resonator X6, and the seventh resonator X7 are sequentially disposed in series between the input terminal Port _1 and the output terminal Port _ 2. Among them, the first resonator X1 to the seventh resonator X7, which have the same first series resonance frequency and first parallel resonance frequency.
One end of the eighth resonator X8 is connected between the first resonator X1 and the second resonator X2, one end of the ninth resonator X9 is connected between the third resonator X3 and the fourth resonator X4, one end of the tenth resonator X10 is connected between the fifth resonator X5 and the sixth resonator X6, one end of the eleventh resonator X11 is connected between the seventh resonator X7 and the output Port _2, and the other ends of the eighth resonator X8, the ninth resonator X9, the tenth resonator X10, and the eleventh resonator X11 are all connected to the ground terminal GND. Among them, the eighth resonator X8 to the eleventh resonator X11, which have the same second series resonance frequency and second parallel resonance frequency.
Illustratively, in the embodiment of the present invention, the first series resonant frequency is the same as the second parallel resonant frequency, which forms the center frequency of the band pass filter.
In addition, the second position, the third position and the fourth position of the serial-arm resonator adopt a structure that two resonators are connected in series (the second resonator X2 is connected in series with the third resonator X3, the fourth resonator X4 is connected in series with the fifth resonator X5, and the sixth resonator X6 is connected in series with the seventh resonator X7), so that the area of the resonators can be increased, the resonators are in a range easy to realize in process, and the reliability of the band-pass filter is further improved.
In some embodiments, the area of the resonator should be controlled to 4000 μm in consideration of the easiness of process implementation2-80000μm2In the meantime. In the same circuit, the area difference of each resonator in the circuit is small as much as possible in design, and generally the difference is less than 4 times.
In some embodiments, in order to make the center frequency of the band pass filter a certain frequency, it may be implemented by adjusting the areas and positions of the first to eleventh resonators X1 to X11. The area of the resonator is the overlapping area of the upper electrode and the lower electrode of the parallel plate capacitor of the resonator.
Illustratively, in order to make the center frequency of the band pass filter 1300MHz, the areas of the first resonator and the tenth resonator may be 63000 ± 50 μm2The area of the second resonator may be 66000 + -50 μm2The area of the third resonator may be 64000 + -50 μm2The areas of the fourth resonator, the fifth resonator and the sixth resonator may be 68000 + -50 μm2The seventh resonator may have an area of 65000 + -50 μm2The eighth resonator may have an area of 56000 + -50 μm2The ninth resonator may have an area of 58500 + -50 μm2The eleventh resonator may have an area of 33000 + -50 μm2。
In some embodiments, the layout of the bandpass filter mainly includes a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer, and an aperture layer in sequence. Wherein the difference frequency layer corresponds to the plurality of parallel-arm resonators, and the plurality of series-arm resonators do not have the difference frequency layer. The difference frequency layer is used for realizing the frequency difference between the resonators connected in parallel and the resonators connected in series, so that a band-pass filter is formed, and the filtering of the specific frequency is realized. In general, the second series resonance frequency and the second parallel resonance frequency of the parallel-arm resonator are lower than the first series resonance frequency and the first parallel resonance frequency of the series-arm resonator, and the first series resonance frequency is equal to the second parallel resonance frequency.
In some embodiments, the band pass filter may further include a piezoelectric layer. Wherein the piezoelectric layer may cover the entire filter chip.
In order to form an air cavity of the resonator and realize the reflection of sound waves, an orifice layer is specially arranged, a plurality of release holes are arranged in the orifice layer, each resonator is provided with a plurality of release channels, and each release channel of each resonator corresponds to at least one release hole.
For example, each resonator may have a plurality of release channels (e.g., five), each corresponding to a release hole, through which release gas enters the release channel and then enters the sacrificial layer region to erode the sacrificial layer material into a gas, which is then exhausted through the release channels and the release holes. In addition, if the space of the band pass filter is tight, two release channels can share one release hole. In addition, in the probe test area, a probe (for example, a GSG probe) needs to be used for testing the chip, so that the piezoelectric layer needs to be etched away, and the lower electrode is exposed for testing.
In some embodiments, the thickness of the upper electrode, the lower electrode and the piezoelectric layer can be adjusted to obtain a bandpass filter with a specific center frequency. Illustratively, to obtain a band-pass filter with a center frequency of 1300MHz, the thickness of the upper electrode may be
The thickness of the lower electrode layer may be
The thickness of the piezoelectric layer may be
The difference frequency layer may have a thickness of
In some embodiments, the release holes may be 15 μm to 25 μm in diameter.
Referring to fig. 2 and 3, IN the layout of the bandpass filter, the first to seventh resonators X1 to X7 may be sequentially arranged between the input terminal IN and the output terminal OUT IN a zigzag pattern as shown IN S1, the eighth and ninth resonators X8 and X9 are located at one side of the first to seventh resonators X1 to X7, and the tenth and eleventh resonators X10 and X11 are located at the other side of the first to seventh resonators X7.
For example, referring to fig. 2, the first to seventh resonators X1 to X7 are sequentially arranged between the input terminal IN and the output terminal OUT IN a zigzag pattern as shown IN S1. The eighth resonator X8 and the ninth resonator X9 are located on the upper sides of the first to seventh resonators X1 to X7, wherein the eighth resonator X8 is located on the upper side of the first resonator X1 and the ninth resonator X9 is located on the upper side of the third resonator X3. The tenth resonator X10 and the eleventh resonator X11 are located at the lower side of the first to seventh resonators X7, wherein the tenth resonator X10 is located at the lower side of the sixth resonator X6 and the eleventh resonator X11 is located at the lower side of the seventh resonator X7.
Referring to fig. 2, the zigzag arrangement may be: centers of the first resonator X1, the third resonator X3, the fifth resonator X5 and the seventh resonator X7 are located on a first straight line d1, centers of the second resonator X2, the fourth resonator X4 and the sixth resonator X6 are located on a second straight line d2, wherein the first straight line d1 is parallel or substantially parallel to the second straight line d2, and connecting lines of centers of any three adjacent resonators of the first resonator X1 to the seventh resonator X7 form a V shape.
As shown in fig. 3, in the layout of the sacrificial layer, each resonator has five sides, and the resonators are connected to each other by one side.
In fig. 3, the horn-like portion of each resonator is a release channel, and each resonator may have a plurality of release channels. The released gas enters the release channel through the release hole, then enters the sacrificial layer area to corrode the sacrificial layer material to become gas, and then is discharged through the release channel and the release hole.
Referring to fig. 4, the layout of the lower electrode layer has a plurality of layout areas including a first lower electrode layout area 101, a second lower electrode layout area 102, a third lower electrode layout area 103, a fourth lower electrode layout area 104, a fifth lower electrode layout area 105, and a sixth lower electrode layout area 106.
The first lower electrode layout area 101 is connected to the input terminal IN, the fifth lower electrode layout area 105 and the sixth lower electrode layout area 106 are connected to the ground terminal GND, the first lower electrode layout area 101 corresponds to the first resonator X1, the second lower electrode layout area 102 corresponds to the second resonator X2 and the third resonator X3, the third lower electrode layout area 103 corresponds to the fourth resonator X4 and the fifth resonator X5, the fourth lower electrode layout area 104 corresponds to the sixth resonator X6 and the seventh resonator X7, the fifth lower electrode layout area 105 corresponds to the eighth resonator X8 and the ninth resonator X9, and the sixth lower electrode layout area 106 corresponds to the tenth resonator X10 and the eleventh resonator X11.
Referring to fig. 5, the layout of the upper electrode layer has a plurality of layout areas including a first upper electrode layout area 201, a second upper electrode layout area 202, a third upper electrode layout area 203, and a fourth upper electrode layout area 204.
The first upper electrode layout area 201 corresponds to the first resonator X1, the second resonator X2 and the eighth resonator X8, the second upper electrode layout area 202 corresponds to the third resonator X3, the fourth resonator X4 and the ninth resonator X9, the third upper electrode layout area 203 corresponds to the fifth resonator X5, the sixth resonator X6 and the tenth resonator X10, and the fourth upper electrode layout area 204 corresponds to the seventh resonator X7 and the eleventh resonator X11.
Referring to fig. 6, the layout of the difference layer includes a first difference layer layout region 301 corresponding to the eighth resonator X8, a second difference layer layout region 302 corresponding to the ninth resonator X9, a third difference layer layout region 303 corresponding to the tenth resonator X10, and a fourth difference layer layout region 304 corresponding to the eleventh resonator X11. Through the arrangement of the difference frequency layer, the series resonance frequency and the parallel resonance frequency of the serial-arm resonator and the parallel-arm resonator have a certain frequency difference, so that the filtering of a specific frequency band of a signal is realized.
Referring to fig. 7, the orifice layer includes a plurality of release orifices 41, surrounding each resonator. One for each discharge hole 41. The released gas enters the release channels through the release holes 41 and then enters the sacrificial layer area to corrode the sacrificial layer material into gas, and then is discharged through the release channels and the release holes 41. In addition, in the probe test area on the hole layer layout, if a probe (for example, a GSG probe) is required to be used for testing the chip, the piezoelectric layer needs to be etched away, and the lower electrode GSG is exposed for testing.
In this embodiment, the band pass filter was tested to obtain an amplitude-frequency characteristic curve as shown in fig. 8. Curve 1 is the variation of S (2,1) with frequency of the band-pass filter (left vertical axis). Curve 2 is S (1,1) and curve 3 is S (2,2), and represents the return loss of the band-pass filter (right vertical axis). As can be seen from fig. 8, the 1dB bandwidth of the bandpass filter is about 44MHz, with suppression levels of 44dBc and 46dBc at 1240MHz and 1360MHz, respectively.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A bandpass filter, comprising: the device comprises an input end, an output end, a grounding end, a plurality of serial arm resonators and a plurality of parallel arm resonators;
the plurality of string-arm resonators include a first resonator, a second resonator, a third resonator, a fourth resonator, a fifth resonator, a sixth resonator and a seventh resonator which are sequentially connected in series between the input end and the output end;
the plurality of parallel-arm resonators include an eighth resonator, a ninth resonator, a tenth resonator and an eleventh resonator, one end of the eighth resonator is connected between the first resonator and the second resonator, one end of the ninth resonator is connected between the third resonator and the fourth resonator, one end of the tenth resonator is connected between the fifth resonator and the sixth resonator, one end of the eleventh resonator is connected between the seventh resonator and the output terminal, and the other ends of the eighth resonator, the ninth resonator, the tenth resonator and the eleventh resonator are all connected to the ground terminal.
2. The bandpass filter according to claim 1, wherein the series resonance frequency and the parallel resonance frequency of each of the plurality of series-arm resonators are the same, and the series resonance frequency and the parallel resonance frequency of each of the plurality of parallel-arm resonators are the same.
3. The bandpass filter according to claim 1 or 2, wherein the series resonance frequency of the plurality of series-arm resonators is the same as the parallel resonance frequency of the plurality of parallel-arm resonators.
4. The bandpass filter according to claim 1, wherein the first resonator and the tenth resonator each have an area of 63000 ± 50 μm2The area of the second resonator is 66000 +/-50 mu m2The area of the third resonator is 64000 +/-50 mu m2The areas of the fourth resonator, the fifth resonator and the sixth resonator are 68000 +/-50 mu m2The area of the seventh resonator is 65000 +/-50 mu m2The area of the eighth resonator is 56000 + -50 μm2The area of the ninth resonator is 58500 +/-50 mu m2The area of the eleventh resonator is 33000 +/-50 mu m2The area of the resonator is the coincidence area of the upper electrode and the lower electrode of the parallel plate capacitor of the resonator.
5. The bandpass filter according to claim 1, wherein a layout of the bandpass filter comprises a sacrificial layer, a lower electrode layer, an upper electrode layer, a difference frequency layer and an aperture layer in sequence, wherein the difference frequency layer corresponds to the plurality of parallel-arm resonators, the plurality of series-arm resonators do not have the difference frequency layer, a plurality of release holes are formed in the aperture layer, each resonator is provided with a plurality of release channels, and each release channel corresponds to at least one release hole.
6. The bandpass filter according to claim 5, wherein the bandpass filter further comprises a piezoelectric layer.
7. The bandpass filter according to claim 6, wherein the upper electrode has a thickness of
The thickness of the lower electrode layer is
The thickness of the piezoelectric layer is
The thickness of the difference frequency layer is
8. A bandpass filter as claimed in any one of claims 5 to 7 wherein the diameter of the release holes is in the range of 15 μm to 25 μm.
9. The bandpass filter according to claim 1, wherein the first to seventh resonators are arranged in order in a zigzag pattern between the input terminal and the output terminal, the eighth resonator and the ninth resonator are located on one side of the first to seventh resonators, and the tenth resonator and the eleventh resonator are located on the other side of the first to seventh resonators.
10. The bandpass filter according to claim 9, wherein the zigzag arrangement comprises: the centers of the first resonator, the third resonator, the fifth resonator and the seventh resonator are located on a first straight line, the centers of the second resonator, the fourth resonator and the sixth resonator are located on a second straight line, the first straight line and the second straight line are parallel, and the connecting lines of the centers of any three adjacent resonators in the first resonator to the seventh resonator form a V shape.
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