CN111384907A - Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer - Google Patents
Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer Download PDFInfo
- Publication number
- CN111384907A CN111384907A CN201811653727.4A CN201811653727A CN111384907A CN 111384907 A CN111384907 A CN 111384907A CN 201811653727 A CN201811653727 A CN 201811653727A CN 111384907 A CN111384907 A CN 111384907A
- Authority
- CN
- China
- Prior art keywords
- bulk acoustic
- acoustic wave
- wave resonator
- piezoelectric stack
- annular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 19
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000005457 optimization Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 35
- 239000010409 thin film Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
Abstract
The disclosure provides a bulk acoustic wave resonator and a manufacturing method thereof, a filter and a duplexer; wherein the bulk acoustic wave resonator comprises: a substrate; an acoustic reflection unit on the substrate; a piezoelectric stack on the acoustic reflection unit; and; a pad on the piezoelectric stack structure; wherein the bulk acoustic wave resonator further comprises a three-dimensional mass loading structure on and/or within the piezoelectric stack. The bulk acoustic wave resonator, the manufacturing method thereof, the filter and the duplexer have the advantages of simple process, lower cost and benefit for performance optimization.
Description
Technical Field
The disclosure belongs to the technical field of wireless communication, and particularly relates to a bulk acoustic wave resonator, a manufacturing method thereof, a filter and a duplexer.
Background
With the development of mobile communication technology, the data transmission rate is required to be faster and faster, the communication frequency bands are more and more, more and more filter devices are required to ensure that the communication frequency bands are not interfered with each other, and the number of the filter devices in a mobile communication terminal, especially a smart phone, is more and more.
At present, in a smart phone, a filter device for a medium-high frequency band mainly adopts a film Bulk Acoustic Wave (BAW) technology. The film bulk acoustic resonator is a basic unit for forming a film bulk acoustic filter and a duplexer, and can be made into a filter and a duplexer device used in the field of mobile communication by cascading the film bulk acoustic resonators with different working frequencies.
In the prior art, the scheme of manufacturing the filter and the duplexer by cascading the film bulk acoustic resonators with different working frequencies still has the following technical defects:
(1) and the film bulk acoustic resonators with different frequencies are manufactured by multiple processes of film deposition, photoetching and etching.
(2) Due to the limitation of film deposition and etching precision, resonators with small frequency difference cannot be manufactured, and the performance optimization design of film bulk acoustic wave filters and duplexers is limited.
(3) It is difficult to realize the thin film bulk acoustic wave duplexer integrated on the chip.
Disclosure of Invention
Technical problem to be solved
The present disclosure provides a bulk acoustic wave resonator, a method for manufacturing the same, a filter, and a duplexer, so as to at least partially solve the above technical problems.
(II) technical scheme
According to an aspect of the present disclosure, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic reflection unit on the substrate;
a piezoelectric stack on the acoustic reflection unit; and;
a pad on the piezoelectric stack structure;
wherein the bulk acoustic wave resonator further comprises a three-dimensional mass loading structure on and/or within the piezoelectric stack.
In some embodiments, the piezoelectric stack includes a bottom electrode, a top electrode, and a piezoelectric film between the bottom and top electrodes;
the three-dimensional mass loading structure is arranged on the top electrode of the piezoelectric stack structure and/or between the top electrode of the piezoelectric stack structure and the piezoelectric film.
In some embodiments, the boundaries of the acoustic reflection unit extend beyond the three-dimensional mass loading structure boundaries.
In some embodiments, the shape of the three-dimensional mass loading structure is the same as or similar to the shape of the effective resonance region of the bulk acoustic wave resonator.
In some embodiments, the three-dimensional mass loading structure comprises:
a first portion comprising one or more ring segments having a center coinciding with a center of an effective resonance region of the bulk acoustic wave resonator;
a second portion comprising a plurality of strip-shaped segments radially distributed within and/or outside the first portion;
and a third portion on the first portion and/or on the second portion, the third portion having a line width and a shape different from those of the first portion and the second portion.
In some embodiments, the first portion comprises a plurality of annular segments, which are arranged in sequence from inside to outside and concentrically;
the annular segments are polygonal annular segments, one end of each strip-shaped segment is intersected with each vertex of one annular segment in the annular segments, and the other end of each strip-shaped segment is intersected with each vertex of the other annular segment in the annular segments; or one end of the strip-shaped sections is converged at the center of the annular sections, and the other end of the strip-shaped sections is intersected with each vertex of one annular section in the annular sections;
or the annular section is a circular ring section, and the strip sections extend along the radial direction of the circular ring section.
In some embodiments, the third portion comprises a plurality of pillars located at the intersection of the first portion and the second portion, and/or located on the first portion between two adjacent intersections, and/or located at the center of the first portion.
According to another aspect of the present disclosure, there is provided a method of manufacturing a bulk acoustic wave resonator, including:
providing a substrate;
forming an acoustic reflection unit on the substrate;
forming a piezoelectric stack structure on the substrate on which the acoustic reflection unit is formed; and;
forming a pad on the piezoelectric stack structure;
wherein the method further comprises forming a three-dimensional mass loading structure on and/or within the piezoelectric stack.
According to another aspect of the present disclosure, there is provided a filter comprising a plurality of the bulk acoustic wave resonators in cascade.
According to another aspect of the present disclosure, there is provided a duplexer including a plurality of the bulk acoustic wave resonators cascaded.
(III) advantageous effects
According to the technical scheme, the bulk acoustic wave resonator, the manufacturing method thereof, the filter and the duplexer have at least one of the following beneficial effects:
(1) the performance and yield of the film bulk acoustic wave filter are improved by utilizing the three-dimensional mass load structure.
(2) The bulk acoustic wave resonator with the three-dimensional mass load structure can be manufactured into a plurality of resonators with different frequencies only by one deposition, photoetching and etching process. By adjusting the dimension (pattern density or duty ratio) of the three-dimensional mass load pattern in the X/Y direction, the working frequency of the resonator can be changed, the manufacturing process is simplified, and the manufacturing cost is reduced.
(3) The traditional method for manufacturing the resonators with different frequencies only can control the thickness of the film, so that the addition of one resonator with different frequencies needs to add a layer of film deposition and corresponding photoetching and etching processes; because the bulk acoustic wave resonator is the bulk acoustic wave resonator with the three-dimensional mass load structure, the thickness of the film can be adjusted according to the traditional method, different mass loads can be manufactured by controlling the line width, and accordingly resonators with different frequencies can be obtained.
(4) The duplexer needs more resonators with different resonant frequencies than a filter because the working frequencies of the transmitting end and the receiving end of the duplexer are different, if the duplexer is manufactured on a wafer, if the number of layers required to be increased by adopting a traditional method is too many, the yield is very low, and the cost is also higher. The resonator with different frequencies can be manufactured by adjusting the line width in the X/Y direction, so that the duplexer is integrated on a wafer without increasing extra cost, only the design line width (pattern duty ratio) needs to be modified, and the on-chip integration of the film bulk acoustic wave duplexer is favorably realized.
Drawings
Fig. 1 is a schematic structural diagram of a three-dimensional mass loading structure according to the present disclosure.
Fig. 2 is another schematic structural diagram of a three-dimensional mass loading structure according to the present disclosure.
Fig. 3 is a cross-sectional view taken along line a-a of fig. 2.
Fig. 4 is a schematic view of yet another structure of a three-dimensional mass loading structure according to the present disclosure.
Fig. 5 is a further structural schematic view of a three-dimensional mass loading structure according to the present disclosure.
Fig. 6 is a schematic structural diagram of a film bulk acoustic resonator according to the present disclosure.
Fig. 7 is a schematic view of another structure of the film bulk acoustic resonator according to the present disclosure.
Fig. 8 is a schematic diagram of a filter structure according to the present disclosure.
Fig. 9 is a schematic diagram of a duplexer structure according to the present disclosure.
< description of symbols >
101, 201, 301-first portion; 102, 202, 302-second part; 103, 203, 303-third part; 104, 204, 304-substrate; 105, 205, 305-thin film structures; 206, 306-an acoustic reflection unit; 207, 307-isolation layer; 208, 308-bottom electrode; 209, 309-piezoelectric film; 210, 310-top electrode; 211, 311-pads; S401-S404, P401-P403, RS 501-504, RP 501-503, TS 501-504 and TP 501-503-thin film bulk acoustic resonator.
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
The present disclosure proposes a three-dimensional (XYZ three-dimensional) mass loading structure for tuning the frequency of a thin film bulk acoustic resonator. The three-dimensional mass loading structure of the present disclosure includes:
a first portion comprising one or more ring segments having a center coinciding with a center of an effective resonance region of the bulk acoustic wave resonator;
a second portion comprising a plurality of strip-shaped segments radially distributed within and/or outside the first portion; and
and a third portion on the first portion and/or on the second portion, the third portion having a line width and a shape different from those of the first portion and the second portion.
Specifically, the first part may include a plurality of annular segments, which are sequentially arranged from inside to outside and concentrically arranged; the annular segments can be polygonal annular segments, one end of each strip-shaped segment is intersected with each vertex of one annular segment in the annular segments, and the other end of each strip-shaped segment is intersected with each vertex of another annular segment in the annular segments; or one end of the strip-shaped sections is converged at the center of the annular section, and the other end of the strip-shaped sections is intersected with each vertex of one of the annular sections. Or, the annular section is a circular ring section, and the plurality of strip sections extend along the radial direction of the circular ring section.
The third portion may comprise a plurality of pillars located at the intersections of the first and second portions, and/or located on the first portion between two adjacent intersections, and/or located in the center of the first portion.
In one embodiment, as shown in fig. 1, the three-dimensional mass loading structure comprises:
the first part 101 comprises four annular sections, specifically circular rings in this embodiment, which are sequentially arranged from inside to outside with the center of the effective resonance area of the bulk acoustic wave resonator as the center;
a second portion 102, including eight strip-shaped segments, where one end of each strip-shaped segment converges at the center of the ring-shaped segment, and the other end is connected to the ring-shaped segment, and extends along the radial direction of the ring (sequentially intersects with each ring-shaped segment from inside to outside), i.e. radially distributed from the center to the periphery; of course, the strip-shaped segment may also selectively intersect with a part of the plurality of annular segments;
and a third part 103 comprising thirty-three cylinders, which is located on the center and on the intersection point of the ring-shaped segment and the strip-shaped segment, and has a line width and a shape different from those of the first part and the second part. Preferably, the line width of the third portion is greater than the line widths of the first portion and the second portion.
In another embodiment, as shown in fig. 2-3, the three-dimensional mass loading structure comprises:
the first part 101 comprises three annular sections, specifically pentagonal rings in this embodiment, which are sequentially arranged from inside to outside with the center of the effective resonance area of the bulk acoustic wave resonator as the center;
a second portion 102, including five strip-shaped segments, wherein one end of each strip-shaped segment converges at the center of the annular segment, and the other end of each strip-shaped segment is connected to five vertices of the annular segment, and extends along the direction from the center of the pentagon to the vertices of the pentagon, i.e. the strip-shaped segments are radially distributed from the center to the periphery; besides, the central point of the pentagon can be directed to the middle point of each side of the pentagon to extend;
a third portion 103 comprising thirty-six cylinders located on the center, on the intersection points of the ring segments and the strip segments, and on the ring segments and between two adjacent intersection points; the third portion is different from the first portion and the second portion in line width and shape. Preferably, the line width of the third portion is greater than the line widths of the first portion and the second portion.
The third part is different from the first part and the second part in line width and shape, so that the frequency of the film bulk acoustic resonator can be controlled more accurately, and the performance of the device can be improved.
It should be understood that the first part of the three-dimensional mass loading structure of the present disclosure is similar to or identical to the shape of the effective resonance area of the film bulk acoustic resonator, and is not limited to the circular ring, the pentagon, and the elliptical ring or any polygonal ring, etc. given in the embodiments. The third portion is not limited to a cylindrical shape, and may be a square column, a triangular column, a pentagonal prism, an elliptic column, or the like, and the cross-sectional dimension thereof may be gradually changed in the thickness direction. The number of ring-shaped segments included in the first portion, the number of strip-shaped segments included in the second portion, and the number of columns included in the third portion are not limited to the numbers given in the embodiments.
Of course, the three-dimensional mass loading structure of the present disclosure is not limited to the specific structure disclosed in the foregoing embodiments, and other structures may be adopted, as shown in fig. 4 to 5, the third portion of the three-dimensional mass loading structure may not be disposed on the center, and the second portion may not extend to the center to converge.
The present disclosure also proposes a thin film bulk acoustic resonator for adjusting frequency using the three-dimensional mass loading structure, comprising: a substrate; an acoustic reflection unit on the substrate; a piezoelectric stack on the acoustic reflection unit; and; a pad on the piezoelectric stack structure; wherein the bulk acoustic wave resonator further comprises a three-dimensional mass loading structure on and/or within the piezoelectric stack. The performance and yield of the film bulk acoustic wave filter are improved by utilizing the three-dimensional mass load structure.
Specifically, the piezoelectric stack structure comprises a bottom electrode, a top electrode and a piezoelectric film positioned between the bottom electrode and the top electrode; the three-dimensional mass loading structure is arranged on the top electrode of the piezoelectric stack structure and/or between the top electrode of the piezoelectric stack structure and the piezoelectric film.
The specific gravity of the mass load can be adjusted in the XY dimension by adjusting the line widths and the shapes of the first portion, the second portion and the third portion, and the specific gravity of the mass load structure can be adjusted in the Z dimension by changing the thickness, so that the frequency of the film bulk acoustic resonator can be adjusted. Specifically, the adjustment of the lateral line width can be realized by the design of a mask, and the current control technology of the line width of the semiconductor process is very mature, so that the three-dimensional adjustment of the mass load can be easily realized. Therefore, a plurality of film bulk acoustic resonators with different frequencies can be manufactured on the same wafer through a layer of three-dimensional mass loading structure.
In one embodiment, as shown in fig. 6, the thin film bulk acoustic resonator includes a substrate 204, an acoustic reflection unit 206, an isolation layer 207, a bottom electrode 208, a piezoelectric film 209, a top electrode 210, a bonding pad 211, and three-dimensional mass loading structures 201(202) and 203. The three-dimensional mass load is arranged above the piezoelectric film 209 and below the top electrode 210, and is opposite to the area where the acoustic reflection unit is located.
In another embodiment, as shown in fig. 7, the thin film bulk acoustic resonator includes a substrate 304, an acoustic reflection unit 306, an isolation layer 307, a bottom electrode 308, a piezoelectric film 309, a top electrode 310, a bonding pad 311, and three-dimensional mass loading structures 301(302) and 303. The three-dimensional mass load is disposed on the top electrode 310 and is opposite to the area where the acoustic reflection unit is located.
The bulk acoustic wave resonator with the three-dimensional mass load structure can be used for manufacturing a plurality of resonators with different frequencies only by once deposition, photoetching and etching, the manufacturing process is simplified, the manufacturing cost is reduced, the mass load of the film bulk acoustic wave resonator can be adjusted through three dimensions, the process difficulty is reduced on one hand, and on the other hand, the frequency of the film bulk acoustic wave resonator can be controlled more accurately.
The disclosure also provides a filter which improves the performance and yield of the film bulk acoustic wave filter by utilizing the three-dimensional mass load structure. Specifically, as shown in fig. 8, the filter includes a plurality of the bulk acoustic wave resonators connected in cascade, wherein at least one of the thin film bulk acoustic resonators includes the three-dimensional mass loading structure, and at least one portion of the three-dimensional mass loading structure of at least one of the thin film bulk acoustic resonators is different from other portions in structural size and/or shape.
The present disclosure also provides a duplexer, which improves performance and yield of the duplexer by using the three-dimensional mass load structure. Specifically, as shown in fig. 9, the duplexer includes a plurality of cascaded bulk acoustic wave resonators, and the duplexer can be manufactured on the same wafer to realize on-chip integration. RS 501-504 and RP 501-503 are film bulk acoustic resonators forming a receiving end filter, and TS 501-504 and TP 501-503 are film bulk acoustic resonators forming a transmitting end filter. At least one of the film bulk acoustic resonators includes a three-dimensional mass loading structure, and at least one portion of the three-dimensional mass loading structure of at least one of the resonators is different from other portions.
The present disclosure also provides a method for manufacturing a bulk acoustic wave resonator, including:
providing a substrate;
forming an acoustic reflection unit on the substrate;
forming a piezoelectric stack structure on the substrate on which the acoustic reflection unit is formed; and;
forming a pad on the piezoelectric stack structure;
wherein the method further comprises forming a three-dimensional mass loading structure on and/or within the piezoelectric stack.
The manufacturing method of the bulk acoustic wave resonator has the advantages of simple process and lower cost, and is beneficial to device integration.
Furthermore, the above definitions of the various elements and methods are not limited to the particular structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by one of ordinary skill in the art, for example:
(1) the present disclosure may also encompass multi-layer three-dimensional mass loading structures, not limited to only a single layer;
(2) the three-dimensional mass loading structure may comprise only the first portion and/or the third portion.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. From the above description, those skilled in the art should clearly recognize the present disclosure.
It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
Of course, the method of the present disclosure may also include other steps according to actual needs, which are not described herein again since they are not related to the innovations of the present disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic reflection unit on the substrate;
a piezoelectric stack on the acoustic reflection unit; and;
a pad on the piezoelectric stack structure;
wherein the bulk acoustic wave resonator further comprises a three-dimensional mass loading structure on and/or within the piezoelectric stack.
2. The bulk acoustic wave resonator according to claim 1, wherein the piezoelectric stack comprises a bottom electrode, a top electrode, and a piezoelectric film between the bottom and top electrodes;
the three-dimensional mass loading structure is arranged on the top electrode of the piezoelectric stack structure and/or between the top electrode of the piezoelectric stack structure and the piezoelectric film.
3. The bulk acoustic wave resonator according to claim 1, wherein the boundaries of the acoustic reflection unit extend beyond the three-dimensional mass loading structure boundaries.
4. The bulk acoustic wave resonator according to claim 1, wherein the shape of the three-dimensional mass loading structure is the same as or similar to the shape of the effective resonance region of the bulk acoustic wave resonator.
5. The bulk acoustic wave resonator according to claim 1, wherein the three-dimensional mass loading structure comprises:
a first portion comprising one or more ring segments having a center coinciding with a center of an effective resonance region of the bulk acoustic wave resonator;
a second portion comprising a plurality of strip-shaped segments radially distributed within and/or outside the first portion;
and a third portion on the first portion and/or on the second portion, the third portion having a line width and a shape different from those of the first portion and the second portion.
6. The bulk acoustic wave resonator according to claim 5, wherein the first part comprises a plurality of ring-shaped segments, which are arranged in sequence from inside to outside and concentrically;
the annular segments are polygonal annular segments, one end of each strip-shaped segment is intersected with each vertex of one annular segment in the annular segments, and the other end of each strip-shaped segment is intersected with each vertex of the other annular segment in the annular segments; or one end of the strip-shaped sections is converged at the center of the annular sections, and the other end of the strip-shaped sections is intersected with each vertex of one annular section in the annular sections;
or the annular section is a circular ring section, and the strip sections extend along the radial direction of the circular ring section.
7. The bulk acoustic wave resonator according to claim 5, wherein the third portion comprises a plurality of pillars located at intersections of the first portion and the second portion, and/or located on the first portion between two adjacent intersections, and/or located at a center of the first portion.
8. A method for manufacturing a bulk acoustic wave resonator comprises the following steps:
providing a substrate;
forming an acoustic reflection unit on the substrate;
forming a piezoelectric stack structure on the substrate on which the acoustic reflection unit is formed; and;
forming a pad on the piezoelectric stack structure;
wherein the method further comprises forming a three-dimensional mass loading structure on and/or within the piezoelectric stack.
9. A filter comprising a cascade of a plurality of bulk acoustic wave resonators as claimed in any one of claims 1 to 7.
10. A duplexer comprising a cascade of a plurality of bulk acoustic wave resonators as claimed in any of claims 1-7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811653727.4A CN111384907B (en) | 2018-12-29 | 2018-12-29 | Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811653727.4A CN111384907B (en) | 2018-12-29 | 2018-12-29 | Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111384907A true CN111384907A (en) | 2020-07-07 |
| CN111384907B CN111384907B (en) | 2023-07-18 |
Family
ID=71218412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811653727.4A Active CN111384907B (en) | 2018-12-29 | 2018-12-29 | Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111384907B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112532206A (en) * | 2020-12-16 | 2021-03-19 | 武汉大学 | Duplexer |
| CN112865740A (en) * | 2020-12-31 | 2021-05-28 | 中国科学院半导体研究所 | MEMS resonator based on modal redistribution and adjusting method thereof |
| WO2022077707A1 (en) * | 2020-10-14 | 2022-04-21 | 瑞声声学科技(深圳)有限公司 | Thin-film bulk acoustic resonator |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395752A (en) * | 2000-11-13 | 2003-02-05 | 门斯股份有限公司 | Thin film resonator and method for manufacturing the same |
| US20050200432A1 (en) * | 2004-03-10 | 2005-09-15 | Tdk Corporation | Piezoelectric resonator and electronic component provided therewith |
| US20120319802A1 (en) * | 2010-01-12 | 2012-12-20 | Kyocera Corporation | Acoustic wave device |
| CN107005220A (en) * | 2014-11-25 | 2017-08-01 | 追踪有限公司 | BAW resonators, the high frequency filter with BAW resonators, the duplexer with high frequency filter and the manufacture method of self-heating reduction |
| CN107592090A (en) * | 2016-07-07 | 2018-01-16 | 三星电机株式会社 | Acoustic resonator and its manufacture method |
| CN108092639A (en) * | 2017-12-21 | 2018-05-29 | 华南理工大学 | A kind of micro-nano column flexible array film bulk acoustic resonator subfilter and its preparation |
| CN109039297A (en) * | 2018-07-26 | 2018-12-18 | 开元通信技术（厦门）有限公司 | A kind of bulk acoustic wave device and preparation method thereof |
-
2018
- 2018-12-29 CN CN201811653727.4A patent/CN111384907B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395752A (en) * | 2000-11-13 | 2003-02-05 | 门斯股份有限公司 | Thin film resonator and method for manufacturing the same |
| US20050200432A1 (en) * | 2004-03-10 | 2005-09-15 | Tdk Corporation | Piezoelectric resonator and electronic component provided therewith |
| US20120319802A1 (en) * | 2010-01-12 | 2012-12-20 | Kyocera Corporation | Acoustic wave device |
| CN107005220A (en) * | 2014-11-25 | 2017-08-01 | 追踪有限公司 | BAW resonators, the high frequency filter with BAW resonators, the duplexer with high frequency filter and the manufacture method of self-heating reduction |
| CN107592090A (en) * | 2016-07-07 | 2018-01-16 | 三星电机株式会社 | Acoustic resonator and its manufacture method |
| CN108092639A (en) * | 2017-12-21 | 2018-05-29 | 华南理工大学 | A kind of micro-nano column flexible array film bulk acoustic resonator subfilter and its preparation |
| CN109039297A (en) * | 2018-07-26 | 2018-12-18 | 开元通信技术（厦门）有限公司 | A kind of bulk acoustic wave device and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 马晓鑫 等: "薄膜体声波传感器的有限元仿真与分析", 《压电与声光》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022077707A1 (en) * | 2020-10-14 | 2022-04-21 | 瑞声声学科技(深圳)有限公司 | Thin-film bulk acoustic resonator |
| CN112532206A (en) * | 2020-12-16 | 2021-03-19 | 武汉大学 | Duplexer |
| CN112865740A (en) * | 2020-12-31 | 2021-05-28 | 中国科学院半导体研究所 | MEMS resonator based on modal redistribution and adjusting method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111384907B (en) | 2023-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7675389B2 (en) | Piezoelectric resonator, piezoelectric filter, and duplexer and communication device using the same | |
| US7868517B2 (en) | Lamb wave resonator | |
| KR100631217B1 (en) | Integrated filter comprising fbar and saw resonator and fabrication method therefor | |
| CN111384907B (en) | Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer | |
| US10491186B2 (en) | Resonator and method for providing resonator | |
| EP1751858B1 (en) | Forming integrated film bulk acoustic resonators having different frequencies | |
| EP2903159A1 (en) | Acoustic wave filter device and duplexer | |
| US10601398B2 (en) | BAW structure having multiple BAW transducers over a common reflector, which has reflector layers of varying thicknesses | |
| US20120086522A1 (en) | Bulk acoustic wave resonator and bulk acoustic wave filter and method of fabricating bulk acoustic wave resonator | |
| WO2021135016A1 (en) | Bulk acoustic wave resonator, bulk acoustic wave resonator group, filter and electronic device | |
| Aliouane et al. | RF-MEMS switchable inductors for tunable bandwidth BAW filters | |
| CN112910434A (en) | Multiplexer based on high-frequency acoustic wave resonator | |
| JP6255605B2 (en) | Artificial dielectric resonator and artificial dielectric filter using the same | |
| CN112787616B (en) | Frequency modulation method of resonator | |
| KR100393774B1 (en) | Manufacturing method for bandpass filter using thin film bulk acoustic resonator | |
| CN113810013B (en) | Resonator, filter and duplexer | |
| JP2004023335A (en) | Band path filter | |
| CN114978084A (en) | Filter and preparation method thereof | |
| JP6288592B2 (en) | Artificial dielectric resonator and artificial dielectric filter using the same | |
| JPH10224044A (en) | Multilayer board for mounting filter | |
| CN114978092A (en) | Bulk acoustic wave resonator stacked on integrated passive device | |
| US11063575B2 (en) | Band reject filters | |
| KR100400745B1 (en) | Bandpass Filter using the Thin Film Bulk Acoustic Resonator and Fabrication Method the same | |
| KR100437496B1 (en) | Surface Acoustic Wave Filter | |
| KR20030025600A (en) | Manufacturing method for duplexer using thin film bulk acoustic resonator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |