CN111384907B - Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer - Google Patents
Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer Download PDFInfo
- Publication number
- CN111384907B CN111384907B CN201811653727.4A CN201811653727A CN111384907B CN 111384907 B CN111384907 B CN 111384907B CN 201811653727 A CN201811653727 A CN 201811653727A CN 111384907 B CN111384907 B CN 111384907B
- Authority
- CN
- China
- Prior art keywords
- bulk acoustic
- acoustic wave
- wave resonator
- annular
- strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000004378 air conditioning Methods 0.000 claims abstract description 7
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 238000005457 optimization Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 29
- 239000010409 thin film Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The disclosure provides a bulk acoustic wave resonator, a manufacturing method thereof, a filter and a duplexer; wherein the bulk acoustic wave resonator comprises: a substrate; an acoustic reflection unit on the substrate; a piezoelectric stack on the acoustic reflection unit; a kind of electronic device with high-pressure air-conditioning system; a bonding pad on the piezoelectric stack structure; wherein the bulk acoustic wave resonator further comprises a three-dimensional mass loading structure on and/or within the piezoelectric stack. The bulk acoustic wave resonator, the manufacturing method thereof, the filter and the duplexer are simple in process, low in cost and favorable for performance optimization.
Description
Technical Field
The disclosure belongs to the technical field of wireless communication, and more particularly relates to a bulk acoustic wave resonator, a manufacturing method thereof, a filter and a duplexer.
Background
With the development of mobile communication technology, data transmission rate is required faster and faster, communication frequency bands are more and more filter devices are needed to ensure that communication frequency bands are not interfered with each other, and the number of filter devices in mobile communication terminals, especially smart phones, is more and more.
Currently, in smartphones, thin film Bulk Acoustic Wave (BAW) technology is mainly used as a filter device for the mid-high frequency band (Film Bulk Acoustic Wave). The thin film bulk acoustic resonator is a basic unit constituting a thin film bulk acoustic filter and a duplexer, and can be manufactured into a filter and a duplexer device used in the field of mobile communication by cascading thin film bulk acoustic resonators having different operating frequencies.
In the prior art, the proposal of cascade manufacturing a filter and a duplexer by using film bulk acoustic wave resonators with different working frequencies still has the following technical defects:
(1) Multiple thin film deposition, photolithography, and etching processes are required to fabricate thin film bulk acoustic resonators of different frequencies.
(2) Because of the limitations of film deposition and etching precision, resonators with smaller frequency difference cannot be manufactured, and the performance optimization design of film bulk acoustic wave filters and diplexers is limited.
(3) It is difficult to implement an on-chip integrated thin film bulk acoustic duplexer.
Disclosure of Invention
First, the technical problem to be solved
The disclosure provides a bulk acoustic wave resonator, a manufacturing method thereof, a filter and a duplexer, so as to at least partially solve the technical problems.
(II) technical scheme
According to one aspect of the present disclosure, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic reflection unit on the substrate;
a piezoelectric stack on the acoustic reflection unit; a kind of electronic device with high-pressure air-conditioning system;
a bonding pad on the piezoelectric stack structure;
wherein the bulk acoustic wave resonator further comprises a three-dimensional mass loading structure on and/or within the piezoelectric stack.
In some embodiments, the piezoelectric stack structure includes a bottom electrode, a top electrode, and a piezoelectric film between the bottom electrode and the top electrode;
the three-dimensional mass loading structure is arranged on the top electrode of the piezoelectric stacking structure and/or between the top electrode of the piezoelectric stacking structure and the piezoelectric film.
In some embodiments, the boundary of the acoustic reflection unit extends beyond the three-dimensional mass-loaded structure boundary.
In some embodiments, the shape of the three-dimensional mass loading structure is the same as or similar to the shape of the effective resonating region of the bulk acoustic wave resonator.
In some embodiments, the three-dimensional mass-loaded structure comprises:
a first portion comprising one or more annular segments, the center of which coincides with the center of the effective resonating region of the bulk acoustic wave resonator;
a second portion comprising a plurality of strip-shaped segments radially distributed inside and/or outside the first portion;
and a third part positioned on the first part and/or the second part, wherein the third part is different from the first part and the second part in line width and shape.
In some embodiments, the first portion comprises a plurality of annular segments arranged sequentially from inside to outside and concentrically;
the annular sections are polygonal annular sections, one ends of the strip-shaped sections are intersected with each vertex of one annular section of the annular sections, and the other ends of the strip-shaped sections are intersected with each vertex of the other annular section of the annular sections; or one ends of the plurality of strip-shaped sections are converged at the centers of the plurality of annular sections, and the other ends of the strip-shaped sections are intersected with the vertexes of one annular section of the plurality of annular sections;
or the annular section is a circular ring section, and the plurality of strip-shaped sections extend along the radial direction of the circular ring section.
In some embodiments, the third portion comprises a plurality of pillars located at the intersection of the first portion and the second portion, and/or located on the first portion between two adjacent ones of the intersection, and/or located at the center of the first portion.
According to another aspect of the present disclosure, there is provided a method for manufacturing a bulk acoustic wave resonator, including:
providing a substrate;
forming an acoustic reflection unit on the substrate;
forming a piezoelectric stack structure on the substrate formed with the acoustic reflection unit; a kind of electronic device with high-pressure air-conditioning system;
forming a bonding pad on the piezoelectric stack structure;
wherein the method further comprises forming a three-dimensional mass-loaded structure on and/or within the piezo-stack.
According to another aspect of the present disclosure, there is provided a filter comprising a plurality of said bulk acoustic wave resonators in cascade.
According to another aspect of the present disclosure, there is provided a duplexer including a plurality of the bulk acoustic wave resonators in cascade.
(III) beneficial effects
As can be seen from the above technical solutions, the bulk acoustic wave resonator, the manufacturing method thereof, the filter and the duplexer have at least one of the following advantages:
(1) The performance and yield of the film bulk acoustic wave filter are improved by utilizing the three-dimensional mass loading structure.
(2) The bulk acoustic wave resonator with the three-dimensional mass loading structure can be manufactured into a plurality of resonators with different frequencies only by one deposition, photoetching and etching process. By adjusting the dimension (pattern density or duty ratio) of the three-dimensional mass load pattern in the X/Y direction, the working frequency of the resonator can be changed, the manufacturing process is simplified, and the manufacturing cost is reduced.
(3) The resonators with different frequencies can be manufactured only by controlling the thickness of the film, so that the addition of one resonator with different frequencies requires the addition of one layer of film deposition and corresponding photoetching and etching processes; because the bulk acoustic wave resonator is of a three-dimensional mass load structure, not only can the thickness of a film be adjusted according to a traditional method, but also different mass loads can be manufactured by controlling the line width, so that resonators with different frequencies can be obtained, on one hand, the process difficulty is reduced, on the other hand, the frequency of the film bulk acoustic wave resonator can be controlled more accurately, and the performance and yield of the film bulk acoustic wave filter and the duplexer are improved.
(4) The duplexer needs more resonators with different resonant frequencies than the filter because the working frequencies of the transmitting end and the receiving end are different, if the duplexer is manufactured on a wafer, the number of layers which are needed to be increased by adopting the traditional method is too large, the yield is very low, and the cost is higher. The resonators with different frequencies can be manufactured by adjusting the line width in the X/Y direction, so that the duplexer is integrated on one wafer without adding extra cost, only the design line width (pattern duty ratio) is required to be modified, and the on-chip integration of the film bulk acoustic duplexer is facilitated.
Drawings
Fig. 1 is a schematic diagram of a three-dimensional mass-loaded structure according to the present disclosure.
Fig. 2 is another structural schematic diagram of a three-dimensional mass-loaded structure of the present disclosure.
Fig. 3 is a cross-sectional view of fig. 2 taken along line A-A.
Fig. 4 is a schematic diagram of yet another structure of the three-dimensional mass-loaded structure of the present disclosure.
Fig. 5 is a schematic diagram of yet another structure of the three-dimensional mass-loaded structure of the present disclosure.
Fig. 6 is a schematic structural diagram of a thin film bulk acoustic resonator of the present disclosure.
Fig. 7 is a schematic diagram of another structure of a film bulk acoustic resonator of the present disclosure.
Fig. 8 is a schematic diagram of a filter structure of the present disclosure.
Fig. 9 is a schematic diagram of a duplexer structure of the present disclosure.
< description of symbols >
101 201, 301-first part; 102 202, 302-a second part; 103 203, 303-third section; 104 204, 304-substrate; 105 205, 305-thin film structure; 206 306-an acoustic reflection unit; 207 307-barrier layer; 208 308-bottom electrode; 209 309-piezoelectric film; 210 310-top electrode; 211 311-bonding pads; S401-S404, P401-P403, RS 501-504, RP 501-503, TS 501-504, TP 501-503-film bulk acoustic wave resonator.
Detailed Description
For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.
The present disclosure proposes a three-dimensional (XYZ three dimensions) mass-loaded structure for tuning the frequency of a thin film bulk acoustic resonator. The three-dimensional mass-loaded structure of the present disclosure includes:
a first portion comprising one or more annular segments, the center of which coincides with the center of the effective resonating region of the bulk acoustic wave resonator;
a second portion comprising a plurality of strip-shaped segments radially distributed inside and/or outside the first portion; and
and a third part positioned on the first part and/or the second part, wherein the third part is different from the first part and the second part in line width and shape.
Specifically, the first portion may include a plurality of annular segments, where the plurality of annular segments are sequentially arranged from inside to outside and concentrically arranged; the annular section may be a polygonal annular section, one end of the plurality of strip-shaped sections intersects each vertex of one annular section of the plurality of annular sections, and the other end intersects each vertex of another annular section of the plurality of annular sections; or one ends of the plurality of strip-shaped sections meet at the center of the annular section, and the other ends of the plurality of strip-shaped sections intersect with the vertexes of one annular section of the plurality of annular sections. Alternatively, the annular section is a circular ring section, and the plurality of strip-shaped sections extend along the radial direction of the circular ring section.
The third portion may comprise a plurality of pillars located at the intersection of the first and second portions and/or on the first portion and between two adjacent ones of the intersection and/or at the centre of the first portion.
In one embodiment, as shown in fig. 1, the three-dimensional mass-loaded structure comprises:
the first portion 101 includes four annular segments, in this embodiment, specifically, annular segments, which are sequentially arranged from inside to outside with the center of the effective resonance area of the bulk acoustic wave resonator as the center;
the second part 102 comprises eight strip-shaped sections, one end of each strip-shaped section is converged at the center of the annular section, the other end of each strip-shaped section is connected with the annular section, and the strip-shaped sections extend along the radial direction of the annular ring (sequentially intersect each annular section from inside to outside), namely are radially distributed from the center to the periphery; of course, the strip-shaped segment may alternatively intersect with a portion of the plurality of annular segments;
a third portion 103, comprising thirty-three cylinders, is located at the center at the intersection of the annular segment and the strip segment, the third portion being different in line width and shape from the first and second portions. Preferably, the line width of the third portion is greater than the line widths of the first portion and the second portion.
In another embodiment, as shown in fig. 2-3, the three-dimensional mass-loaded structure comprises:
the first portion 101 includes three annular segments, specifically pentagonal rings in this embodiment, and the three annular segments are sequentially arranged from inside to outside with the center of the effective resonance area of the bulk acoustic wave resonator as the center;
the second portion 102 includes five strip-shaped sections, one end of each strip-shaped section merges at the center of the annular section, and the other end of each strip-shaped section is connected with five vertexes of the annular section respectively, and extends along the direction of the center of the pentagon to the vertex of the pentagon, namely, is radially distributed from the center to the periphery; in addition, the pentagon may extend along the center of the pentagon in a direction pointing to the midpoint of each side of the pentagon;
a third portion 103 comprising thirty-six cylinders located at the center, at the intersection of the annular segment and the strip segment, and at the annular segment and between two adjacent intersections; the third portion is different from the line width and shape of the first portion and the second portion. Preferably, the line width of the third portion is greater than the line widths of the first portion and the second portion.
The third part is different from the first part and the second part in line width and shape, which is favorable for controlling the frequency of the film bulk acoustic resonator more accurately and improving the performance of the device.
It should be understood that the first portion of the three-dimensional mass-loaded structure of the present disclosure is similar or identical in shape to the effective resonance region of the thin film bulk acoustic resonator, and is not limited to the circular ring, pentagon, elliptical ring, any polygonal ring, or the like, as given in the embodiments. The third portion is not limited to a cylindrical shape, and may be a square column, a triangular column, a pentagonal column, an elliptical column, or the like, and the cross-sectional dimension thereof may be gradually changed in the thickness direction. The number of annular segments included in the first portion, the number of strip segments included in the second portion, and the number of columns included in the third portion are also not limited to the numbers given in the embodiments.
Of course, the three-dimensional mass-loaded structure of the present disclosure is not limited to the specific structure disclosed in the foregoing embodiment, and other structures may be adopted, as shown in fig. 4-5, where the third portion of the three-dimensional mass-loaded structure may not be disposed on the center, and the second portion may not extend to the center for merging.
The present disclosure also proposes a thin film bulk acoustic resonator for adjusting frequency using the three-dimensional mass-loaded structure, comprising: a substrate; an acoustic reflection unit on the substrate; a piezoelectric stack on the acoustic reflection unit; a kind of electronic device with high-pressure air-conditioning system; a bonding pad on the piezoelectric stack structure; wherein the bulk acoustic wave resonator further comprises a three-dimensional mass loading structure on and/or within the piezoelectric stack. The performance and yield of the film bulk acoustic wave filter are improved by utilizing the three-dimensional mass loading structure.
Specifically, the piezoelectric stack structure comprises a bottom electrode, a top electrode and a piezoelectric film positioned between the bottom electrode and the top electrode; the three-dimensional mass loading structure is arranged on the top electrode of the piezoelectric stacking structure and/or between the top electrode of the piezoelectric stacking structure and the piezoelectric film.
By adjusting the line widths and shapes of the first, second, and third portions, the specific gravity of the mass load can be adjusted in the XY dimension, and at the same time, by changing the thickness, the specific gravity of the mass load structure can be adjusted in the Z dimension, whereby the frequency of the thin film bulk acoustic resonator can be adjusted. Specifically, the adjustment of the lateral line width can be realized through mask design, and the current control technology of the line width of the semiconductor process is very mature, so that the three-dimensional adjustment of the mass load can be easily realized. Therefore, a plurality of thin film bulk acoustic resonators with different frequencies can be manufactured on the same wafer through a layer of three-dimensional mass loading structure.
In one embodiment, as shown in fig. 6, the thin film bulk acoustic resonator includes a substrate 204, an acoustic reflection unit 206, an isolation layer 207, a bottom electrode 208, a piezoelectric film 209, a top electrode 210, a bonding pad 211, and three-dimensional mass-loaded structures 201 (202) and 203. Wherein the three-dimensional mass load is disposed above the piezoelectric film 209 and below the top electrode 210, opposite to the region where the acoustic reflection unit is located.
In another embodiment, as shown in fig. 7, the thin film bulk acoustic resonator includes a substrate 304, an acoustic reflection unit 306, an isolation layer 307, a bottom electrode 308, a piezoelectric film 309, a top electrode 310, a bonding pad 311, and three-dimensional mass-loaded structures 301 (302) and 303. The three-dimensional mass load is disposed on the top electrode 310 and is opposite to the area where the acoustic reflection unit is located.
The bulk acoustic wave resonator with the three-dimensional mass load structure can be manufactured into a plurality of resonators with different frequencies by only one-time deposition, photoetching and etching, so that the manufacturing process is simplified, the manufacturing cost is reduced, the mass load of the film bulk acoustic wave resonator can be adjusted through three dimensions, the process difficulty is reduced, and the frequency of the film bulk acoustic wave resonator can be controlled more accurately.
The present disclosure also provides a filter that improves the performance and yield of a thin film bulk acoustic wave filter using the three-dimensional mass-loaded structure. Specifically, as shown in fig. 8, the filter includes a plurality of cascaded bulk acoustic wave resonators, wherein at least one of the film bulk acoustic resonators includes the three-dimensional mass loading structure, and at least a portion of the three-dimensional mass loading structure of at least one of the film bulk acoustic resonators is different in structural size and/or shape from other portions.
The disclosure also provides a duplexer, which improves the performance and yield of the duplexer by using the three-dimensional mass loading structure. Specifically, as shown in fig. 9, the duplexer includes a plurality of cascaded bulk acoustic wave resonators, and the duplexer can be manufactured on the same wafer, so as to realize on-chip integration. Wherein, RS 501-504, RP 501-503 are film bulk acoustic wave resonators forming a receiving-end filter, TS 501-504, TP 501-503 are film bulk acoustic wave resonators forming a transmitting-end filter. At least one thin film bulk acoustic resonator comprises a three-dimensional mass-loaded structure, and at least a portion of the three-dimensional mass-loaded structure of the at least one resonator is different from the other portions.
The disclosure also provides a method for manufacturing the bulk acoustic wave resonator, comprising:
providing a substrate;
forming an acoustic reflection unit on the substrate;
forming a piezoelectric stack structure on the substrate formed with the acoustic reflection unit; a kind of electronic device with high-pressure air-conditioning system;
forming a bonding pad on the piezoelectric stack structure;
wherein the method further comprises forming a three-dimensional mass-loaded structure on and/or within the piezo-stack.
The manufacturing method of the bulk acoustic wave resonator is simple in process, low in cost and beneficial to device integration.
Furthermore, the above definitions of the elements and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and may be modified or replaced simply by one skilled in the art, for example:
(1) The present disclosure may also include a multi-layered three-dimensional mass-loaded structure, not limited to a single layer;
(2) The three-dimensional mass-loaded structure may comprise only the first portion and/or the third portion.
While the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be understood that the foregoing embodiments are merely illustrative of the invention and are not intended to limit the invention, and that any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the present disclosure are intended to be included within the scope of the present disclosure.
Thus, embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. From the foregoing description, those skilled in the art will readily appreciate the present disclosure.
It should be noted that, in the drawings or the text of the specification, implementations not shown or described are all forms known to those of ordinary skill in the art, and not described in detail. Furthermore, the above definitions of the elements and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and may be simply modified or replaced by those of ordinary skill in the art.
Of course, according to actual needs, the method of the present disclosure further includes other steps, which are not described herein because they are irrelevant to innovations of the present disclosure.
While the foregoing is directed to embodiments of the present disclosure, other and further details of the invention may be had by the present application, it is to be understood that the foregoing description is merely exemplary of the present disclosure and that no limitations are intended to the scope of the disclosure, except insofar as modifications, equivalents, improvements or modifications may be made without departing from the spirit and principles of the present disclosure.
Claims (9)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic reflection unit on the substrate;
a piezoelectric stack on the acoustic reflection unit; a kind of electronic device with high-pressure air-conditioning system;
a bonding pad on the piezoelectric stack structure;
wherein the bulk acoustic wave resonator further comprises a three-dimensional mass loading structure on and/or within the piezoelectric stack;
wherein the three-dimensional mass-loaded structure comprises:
a first portion comprising one or more annular segments, the center of which coincides with the center of the effective resonating region of the bulk acoustic wave resonator;
a second portion comprising a plurality of strip-shaped segments radially distributed inside and/or outside the first portion;
and a third part positioned on the first part and/or the second part, wherein the third part is different from the first part and the second part in line width and shape.
2. The bulk acoustic wave resonator of claim 1, wherein the piezoelectric stack structure comprises a bottom electrode, a top electrode, and a piezoelectric film between the bottom electrode and the top electrode;
the three-dimensional mass loading structure is arranged on the top electrode of the piezoelectric stacking structure and/or between the top electrode of the piezoelectric stacking structure and the piezoelectric film.
3. The bulk acoustic wave resonator of claim 1, wherein a boundary of the acoustic reflection unit extends beyond the three-dimensional mass-loaded structure boundary.
4. The bulk acoustic wave resonator of claim 1, wherein the shape of the three-dimensional mass loading structure is the same as the shape of the effective resonating region of the bulk acoustic wave resonator.
5. The bulk acoustic wave resonator of claim 1, wherein the first portion comprises a plurality of annular segments arranged sequentially from inside to outside and concentrically;
the annular sections are polygonal annular sections, one ends of the strip-shaped sections are intersected with each vertex of one annular section of the annular sections, and the other ends of the strip-shaped sections are intersected with each vertex of the other annular section of the annular sections; or one ends of the plurality of strip-shaped sections are converged at the centers of the plurality of annular sections, and the other ends of the strip-shaped sections are intersected with the vertexes of one annular section of the plurality of annular sections;
or the annular section is a circular ring section, and the plurality of strip-shaped sections extend along the radial direction of the circular ring section.
6. The bulk acoustic wave resonator according to claim 1, wherein the third portion comprises a plurality of pillars located at an intersection of the first portion and the second portion and/or on the first portion and between two adjacent ones of the intersection and/or at a center of the first portion.
7. A method of fabricating a bulk acoustic wave resonator, comprising:
providing a substrate;
forming an acoustic reflection unit on the substrate;
forming a piezoelectric stack structure on the substrate formed with the acoustic reflection unit; a kind of electronic device with high-pressure air-conditioning system;
forming a bonding pad on the piezoelectric stack structure;
wherein the method further comprises forming a three-dimensional mass-loaded structure on and/or within the piezoelectric stack;
wherein the three-dimensional mass-loaded structure comprises:
a first portion comprising one or more annular segments, the center of which coincides with the center of the effective resonating region of the bulk acoustic wave resonator;
a second portion comprising a plurality of strip-shaped segments radially distributed inside and/or outside the first portion;
and a third part positioned on the first part and/or the second part, wherein the third part is different from the first part and the second part in line width and shape.
8. A filter comprising a plurality of bulk acoustic wave resonators as claimed in any one of claims 1 to 6 in cascade.
9. A diplexer comprising a cascade of a plurality of bulk acoustic wave resonators as claimed in any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811653727.4A CN111384907B (en) | 2018-12-29 | 2018-12-29 | Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811653727.4A CN111384907B (en) | 2018-12-29 | 2018-12-29 | Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111384907A CN111384907A (en) | 2020-07-07 |
| CN111384907B true CN111384907B (en) | 2023-07-18 |
Family
ID=71218412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811653727.4A Active CN111384907B (en) | 2018-12-29 | 2018-12-29 | Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111384907B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112242826A (en) * | 2020-10-14 | 2021-01-19 | 瑞声声学科技(深圳)有限公司 | Film bulk acoustic resonator |
| CN112532206A (en) * | 2020-12-16 | 2021-03-19 | 武汉大学 | Duplexer |
| CN112865740A (en) * | 2020-12-31 | 2021-05-28 | 中国科学院半导体研究所 | MEMS resonator based on modal redistribution and adjusting method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395752A (en) * | 2000-11-13 | 2003-02-05 | 门斯股份有限公司 | Thin film resonator and method for manufacturing the same |
| CN107005220A (en) * | 2014-11-25 | 2017-08-01 | 追踪有限公司 | BAW resonators, the high frequency filter with BAW resonators, the duplexer with high frequency filter and the manufacture method of self-heating reduction |
| CN107592090A (en) * | 2016-07-07 | 2018-01-16 | 三星电机株式会社 | Acoustic resonator and its manufacture method |
| CN108092639A (en) * | 2017-12-21 | 2018-05-29 | 华南理工大学 | A kind of micro-nano column flexible array film bulk acoustic resonator subfilter and its preparation |
| CN109039297A (en) * | 2018-07-26 | 2018-12-18 | 开元通信技术（厦门）有限公司 | A kind of bulk acoustic wave device and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005260484A (en) * | 2004-03-10 | 2005-09-22 | Tdk Corp | Piezoelectric resonator and electronic component equipped with the same |
| WO2011087018A1 (en) * | 2010-01-12 | 2011-07-21 | 京セラ株式会社 | Acoustic wave device |
-
2018
- 2018-12-29 CN CN201811653727.4A patent/CN111384907B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395752A (en) * | 2000-11-13 | 2003-02-05 | 门斯股份有限公司 | Thin film resonator and method for manufacturing the same |
| CN107005220A (en) * | 2014-11-25 | 2017-08-01 | 追踪有限公司 | BAW resonators, the high frequency filter with BAW resonators, the duplexer with high frequency filter and the manufacture method of self-heating reduction |
| CN107592090A (en) * | 2016-07-07 | 2018-01-16 | 三星电机株式会社 | Acoustic resonator and its manufacture method |
| CN108092639A (en) * | 2017-12-21 | 2018-05-29 | 华南理工大学 | A kind of micro-nano column flexible array film bulk acoustic resonator subfilter and its preparation |
| CN109039297A (en) * | 2018-07-26 | 2018-12-18 | 开元通信技术（厦门）有限公司 | A kind of bulk acoustic wave device and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 薄膜体声波传感器的有限元仿真与分析;马晓鑫 等;《压电与声光》;压电与声光;第39卷(第6期);第800-804页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111384907A (en) | 2020-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111384907B (en) | Bulk acoustic wave resonator, manufacturing method thereof, filter and duplexer | |
| US7868517B2 (en) | Lamb wave resonator | |
| US7675389B2 (en) | Piezoelectric resonator, piezoelectric filter, and duplexer and communication device using the same | |
| RU2638085C2 (en) | Tunable inductor device, transceiver and method | |
| WO2021258405A1 (en) | Thin film bulk acoustic resonator and manufacturing process therefor | |
| US10491186B2 (en) | Resonator and method for providing resonator | |
| CN108649920B (en) | Piezoelectric acoustic resonator, piezoelectric acoustic wave filter, duplexer, and radio frequency communication module | |
| KR100631217B1 (en) | Integrated filter comprising fbar and saw resonator and fabrication method therefor | |
| US8390399B2 (en) | Resonator and periodic structure | |
| US20120161905A1 (en) | Resonant element and resonator filter with frequency-tunable layer structure and method of tuning frequency of resonator filter | |
| CN114884480B (en) | Method for forming surface acoustic wave resonator | |
| CN108539336B (en) | HMSIW dual-mode dual-band filter with independently controllable bandwidth | |
| KR20230042012A (en) | Cavity structure and fabrication process of bulk acoustic resonators | |
| WO2020137540A1 (en) | Frequency selective surface | |
| Aliouane et al. | RF-MEMS switchable inductors for tunable bandwidth BAW filters | |
| JP2001251102A (en) | Thin film resonator filter and method for constructing the same | |
| JP3901130B2 (en) | Resonator, filter, and communication device | |
| CN103178321B (en) | SIW resonator and processing method thereof | |
| CN112910434A (en) | Multiplexer based on high-frequency acoustic wave resonator | |
| JP6255605B2 (en) | Artificial dielectric resonator and artificial dielectric filter using the same | |
| JP3916061B2 (en) | Bandpass filter | |
| CN112787616B (en) | Frequency modulation method of resonator | |
| CN214101324U (en) | Multiplexer based on high-frequency acoustic wave resonator | |
| CN113810013B (en) | Resonator, filter and duplexer | |
| JP6288592B2 (en) | Artificial dielectric resonator and artificial dielectric filter using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |