CN103178321B - SIW resonator and processing method thereof - Google Patents
SIW resonator and processing method thereof Download PDFInfo
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- CN103178321B CN103178321B CN201310060093.2A CN201310060093A CN103178321B CN 103178321 B CN103178321 B CN 103178321B CN 201310060093 A CN201310060093 A CN 201310060093A CN 103178321 B CN103178321 B CN 103178321B
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Abstract
The invention discloses a kind of SIW resonator, in SIW resonator described in this, be provided with intermediate air layer.By arranging intermediate air layer, reducing the factor being unfavorable for Q value, improve Q-unloaded Q value.Present invention also offers a kind of processing method of SIW resonator, step is simultaneously: expanded by the thickness of single SIW resonator; Described SIW resonator inside after thickness extension arranges intermediate air layer.Intermediate air layer can be set in SIW resonator by the method, thus by changing the version of SIW resonator, achieve the object improving SIW resonator q.
Description
Technical field
The invention belongs to microwave planar circuit design field, relate to a kind of SIW resonator, particularly a kind of SIW resonator with intermediate air layer, and the processing method of this resonator.
Background technology
Substrate integration wave-guide (SIW) is the microwave small technology of the fashionable world in recent years, obtains the very big concern of academia.Adopt the planar parasitic circuit that this Technology design completes, its nonloaded Q can bring up to hundreds of from tens, rise an order of magnitude, and volume weight can accept; The more important thing is these circuit can with other planar circuit seamless link, with low cost, easy making process.
Along with the further investigation to substrate integration wave-guide, the application limitation of substrate integration wave-guide also fully exposes, this kind of planar parasitic circuit is while obtaining good result to the wideband circuit of transmission line form, and the resonator class circuit for narrow-band characteristic just shows slightly not enough.But if nonloaded Q can be improved further, will the passive narrow-band device of some high out-of-side rejection also can be designed with planar circuit, progradation will be played to circuit integration and the miniaturized lightweight of spaceborne parts.
Resonator is one of circuit elementary cell be widely used in various microwave and millimeter wave circuit.The design of microwave filter and frequency source is based on resonator.The performance characteristics of this resonator element determines the main performance characteristic of this series products.The nonloaded Q of resonator element, the frequency selective characteristic of direct respective filter and oscillator.Nearly all communication channel all be unable to do without filter and oscillator, and their characteristic all directly affects the characteristic of channel.Improve the transmission characteristic of elementary cell as this kind of in resonator portion, the communications system properties based on this element also will make moderate progress.
Summary of the invention
The technical problem that the present invention solves is: on the one hand, the invention provides a kind of SIW resonator, by arranging intermediate air layer, reducing the factor being unfavorable for Q value, improve Q-unloaded Q value.
On the other hand, the invention provides a kind of processing method of SIW resonator, intermediate air layer can be set in SIW resonator by the method, thus by changing the version of SIW resonator, achieve the object improving SIW resonator q.
For solving the problems of the technologies described above, technical scheme of the present invention is as follows:
One aspect of the present invention provides a kind of SIW resonator, in described SIW resonator, is provided with intermediate air layer.
Further, described intermediate air layer is square or circular.
Further, the thickness of described intermediate air layer is 1/4 ~ 1/3 of described SIW resonator substrate thickness; The area of described intermediate air layer is 25% ~ 80% of described substrate area.
Further, described SIW resonator is for forming filter, the elementary cell of multiplexer and oscillator.
Further, described SIW resonator is sandwich construction.
The present invention provides a kind of processing method of SIW resonator on the other hand, comprises the following steps:
The thickness of single SIW resonator is expanded;
Described SIW resonator inside after thickness extension arranges intermediate air layer;
Adjust thickness and the area of described intermediate air layer, the Q-unloaded of described SIW resonator and resonance point are met design requirement.
Further, the thickness of the described SIW resonator after described thickness extension is n*t, and wherein, n is natural number.
Further, PCB, MEMS or LTCC thickness to described single SIW resonator is adopted to expand.
The present invention compared with prior art tool has the following advantages:
The present invention gives a kind of SIW resonator nonloaded Q being improved the realization of multi-layer PCB technique by design, break the present situation that existing SIW resonator nonloaded Q depends on pcb board material.Adopt the method can need to design corresponding air to several thousand according to design at hundreds of and load SIW resonator, substantially increase the range of choice of the SIW resonator nonloaded Q based on PCB technology.Significantly cut down finished cost, improve integration degree.Meanwhile, due to designing of nonloaded Q, likely for the design of microwave filter brings new development field.
Accompanying drawing explanation
Fig. 1 is embodiment of the present invention SIW resonator structure schematic diagram;
Fig. 2 is the cutaway view of SIW resonator along A-A in Fig. 1;
Fig. 3 is embodiment of the present invention processing method flow chart.
Embodiment
Just by reference to the accompanying drawings the present invention is described further below.
SIW resonator of the present invention is composition filter, the elementary cell of multiplexer and oscillator, its nonloaded Q, the frequency selective characteristic of direct respective filter and oscillator.If nonloaded Q can be improved further, will the passive narrow-band device of some high out-of-side rejection also can be designed with planar circuit, progradation will be played to circuit integration and the miniaturized lightweight of spaceborne parts.
As shown in Figure 1, 2, SIW resonator of the present invention is the acquisition of single SIW resonator after thickness extension, and be provided with intermediate air layer therein, position set by this intermediate air layer is the centre of SIW resonator substrate.By adding this intermediate air layer, the Q-unloaded Q of SIW resonator can be improved.
When arranging intermediate air layer, the shape of this intermediate air layer, volume and area all have impact to Q value.In embodiments of the present invention, the adoptable square of the shape of intermediate air layer or circle.
For obtaining above-mentioned SIW resonator, the present invention processes by the following method, and operating process is as Fig. 3.
(1) thickness of single SIW resonator is expanded
In prior art, the thickness of single SIW resonator is t, after expanding, is expanded to the SIW resonator that thickness is n*t to it.During concrete operations, PCB, MEMS or LTCC technique can be adopted.Wherein, when adopting PCB technology, the thickness expanding rear formation to single SIW resonator is the SIW resonator of n*t is sandwich construction.The multiple n of this thickness limits by the processing technology of PCB, when technique allows, expands to greatest extent single SIW resonator, such as, when obtaining 4 times of thickness, is then 4t by the thickness extension of single SIW resonator.
(2) the described SIW resonator inside after thickness extension arranges intermediate air layer.
Intermediate air layer can be set to square or circle, and its position will be arranged at the middle part of resonator substrate.
In a first embodiment, if intermediate air layer is square, the zone line of the thickness of the SIW resonator substrate after thickness extension adds air layer, and its thickness is generally 1/4 ~ 1/3 of whole substrate thickness, and its area is generally 25% ~ 80% of original substrate area.
(3) resonant frequency after changing and nonloaded Q is calculated.
If nonloaded Q now reaches requirement, carry out next step.Otherwise the SIW resonator nonloaded Q after the thickness increasing air layer makes change reaches requirement.
(4) if Q value now meets the demands, calculate the ratio that air loads rear resonance frequency and former resonator resonance frequency, the resonator length of side after loading with this ratio adjustment air, make its resonance point and require that resonance frequency is consistent, check frequency now and nonloaded Q, complete the lifting design of nonloaded Q.
Loading SIW resonator according to the air designed is the design work that elementary cell carries out parts.
In a second embodiment, if intermediate air layer is circular, then the expansion of its thickness is consistent with square, and makes the intermediate air layer thickness after expansion be 1/4 ~ 1/3 of whole SIW resonator substrate thickness, and amass the requirement into substrate area 25% ~ 80% according to intermediate air aspect, its radius is set.
The unspecified part of the present invention belongs to general knowledge as well known to those skilled in the art.
Claims (2)
1. a SIW resonator, is characterized in that, in described SIW resonator, is provided with intermediate air layer;
Described intermediate air layer is square or circular, and its position is arranged at the middle part of SIW resonator substrate;
The thickness of described intermediate air layer is 1/4 ~ 1/3 of the whole substrate thickness of described SIW resonator; The area of described intermediate air layer is 25% ~ 80% of described SIW resonator substrate area;
Described SIW resonator is for forming filter, the elementary cell of multiplexer and oscillator;
Described SIW resonator is sandwich construction.
2. a processing method for SIW resonator, is characterized in that, comprises the following steps:
The thickness of single SIW resonator is expanded;
Described SIW resonator inside after thickness extension arranges intermediate air layer, and its position is arranged at the middle part of SIW resonator substrate;
Adjust thickness and the area of described intermediate air layer, the Q-unloaded of described SIW resonator and resonance point are met design requirement;
The thickness of described intermediate air layer is 1/4 ~ 1/3 of the whole substrate thickness of SIW resonator; The area of described intermediate air layer is 25% ~ 80% of described SIW resonator original substrate area;
The thickness of the described SIW resonator after thickness extension is n*t, SIW resonator is sandwich construction, and wherein, n is natural number, and t is the thickness of single SIW resonator;
PCB, MEMS or LTCC thickness to single SIW resonator is adopted to expand.
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| CN201310060093.2A CN103178321B (en) | 2013-02-26 | 2013-02-26 | SIW resonator and processing method thereof |
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| CN201310060093.2A CN103178321B (en) | 2013-02-26 | 2013-02-26 | SIW resonator and processing method thereof |
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| CN103178321B true CN103178321B (en) | 2016-01-13 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103531878B (en) * | 2013-10-14 | 2015-04-08 | 东南大学 | Push-push and push-pull dual-output substrate integrated waveguide oscillator |
| CN104218296B (en) * | 2014-09-05 | 2017-10-24 | 西安空间无线电技术研究所 | A kind of waveguide based on multi-sheet printed technology and preparation method thereof |
| CN110336100A (en) * | 2019-06-19 | 2019-10-15 | 华中科技大学 | A kind of air filling SIW double-passband filter and its optimization method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225878B1 (en) * | 1998-06-02 | 2001-05-01 | Matsushita Electric Industrial Co., Ltd. | Millimeter wave module and radio apparatus |
| CN102299394A (en) * | 2011-04-21 | 2011-12-28 | 哈尔滨工业大学 | Supernormal medium ultrahigh frequency band pass filter |
| CN202259650U (en) * | 2011-10-25 | 2012-05-30 | 电子科技大学 | Highly miniaturized substrate integrated waveguide resonator |
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- 2013-02-26 CN CN201310060093.2A patent/CN103178321B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6225878B1 (en) * | 1998-06-02 | 2001-05-01 | Matsushita Electric Industrial Co., Ltd. | Millimeter wave module and radio apparatus |
| CN102299394A (en) * | 2011-04-21 | 2011-12-28 | 哈尔滨工业大学 | Supernormal medium ultrahigh frequency band pass filter |
| CN202259650U (en) * | 2011-10-25 | 2012-05-30 | 电子科技大学 | Highly miniaturized substrate integrated waveguide resonator |
Non-Patent Citations (1)
| Title |
|---|
| 毫米波段LTCC高Q滤波器研制;章圣长;《中国优秀硕士学位论文全文数据库》;20061231;第1-46页，图1-1—图4-29 * |
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