CN105206744A - Flexible resistive random access memory of dual-layer film structure and manufacturing method for flexible resistive random access memory - Google Patents
Flexible resistive random access memory of dual-layer film structure and manufacturing method for flexible resistive random access memory Download PDFInfo
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- CN105206744A CN105206744A CN201510506263.4A CN201510506263A CN105206744A CN 105206744 A CN105206744 A CN 105206744A CN 201510506263 A CN201510506263 A CN 201510506263A CN 105206744 A CN105206744 A CN 105206744A
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Abstract
The invention provides a flexible resistive random access memory of a dual-layer film structure and a manufacturing method for the flexible resistive random access memory and belongs to the resistive random access memory field. The flexible resistive random access memory sequentially comprises a flexible substrate, a bottom electrode, a ZnO film layer, an Al2O3 film layer and a top electrode from down to up, wherein the ZnO film layer and the Al2O3 film layer commonly form a resistive random access medium layer of the resistive random access memory. The resistive random access memory is advantaged in that, resistive effects are excellent, high-low resistance state distribution is stable, an on/off ratio is relatively high, and storage time is relatively long, excellent resistive characteristics are further realized after the flexible resistive random access memory is bent by certain times, and the resistive random access memory has potential application values in the flexible storage and circuit fields.
Description
Technical field
The invention belongs to resistance-variable storing device field, flexible resistance-variable storing device being specifically related to a kind of double-layer film structure and preparation method thereof.
Background technology
As one of most potential non-volatility memorizer in future, the extensive concern that resistance-variable storing device (RRAM) is simple with its structure, service speed fast, storage density advantages of higher obtains researcher.The principle of resistance-variable storing device is: when curtage acts on the memory be made up of electrode and storage medium layer, and the change of several magnitude can occur the resistance value of this device, and after external electric field is removed, this resistance states still can keep.Utilize this transformation between height two resistance states of material, just can carry out information storage.According to the polarity and the size that rely on electric field, resistance-variable storing device can be divided into unipolarity and bipolarity.The resistance states of unipolarity resistance-variable storing device changes only relevant with the size of external electric field, and the size of bipolarity and external electric field and positive-negative polarity related.At present, it is found that many metal oxides all have the potentiality preparing resistance-variable storing device, such as TiO
2, NiO, CuO, Al
2o
3, ZrO
2, ZnO etc., and many perovskite compounds and organic substance.
In recent years, flexible electronic technology receives the concern of more and more researcher.Flexible electronic is a kind of novel electron technology inorganic or organic electronic material are produced on flexibility or thin metal matrix plate, there is unique bend resistance characteristic and high efficiency, low cost manufacturing process, be with a wide range of applications in the field such as the energy, information, as thin-film solar cells, flexible display, Organic Light Emitting Diode etc.Data storage is the basis of all hyundai electronics industries, and therefore flexibility of research and development memory can promote the development of electron trade.
At present, the storage medium layer of resistance-variable storing device is a kind of resistance changing film, there is the shortcomings such as large, the high low resistance state dispersion range of operating voltage is large, fatigue resistance is poor and cannot reach the requirement of practical application.On the other hand, when preparing flexible device, preparation temperature usually can not higher than the fusing point of flexible substrate, and most of material is when low-temperature growth, too much and not can possess change resistance performance due to defect in film.
Summary of the invention
The object of the invention is, provide a kind of and when low-temperature growth, there is stable change resistance performance and resistance-variable storing device having good flexibility and preparation method thereof.
Technical scheme of the present invention is as follows:
A flexible resistance-variable storing device for double-layer film structure, is followed successively by flexible substrate, hearth electrode, ZnO film layer, Al from the bottom up
2o
3thin layer and top electrode, described ZnO film layer and Al
2o
3thin layer constitutes the resistive memory medium layer of resistance-variable storing device jointly.
Further, the thickness of described ZnO film layer is 180 ~ 200nm, described Al
2o
3the thickness of thin layer is 5 ~ 8nm.
Further, described hearth electrode is one or more in Au, Ti, Pt, Al, Cu, Ag etc., and described top electrode is one or more in Au, Ti, Pt, Al, Cu, Ag etc.
Preferably, described hearth electrode and top electrode are by the thick Au layer of 200nm and the thick Ti layer composition of 20nm ~ 30nm.
Further, described flexible substrate is PETG (PET), polyethersulfone resin (PES) or polybutylene terephthalate (PBT) etc.
Present invention also offers a kind of preparation method of flexible resistance-variable storing device of above-mentioned double-layer film structure, comprise the following steps:
Step 1: prepare hearth electrode on flexible substrates;
Step 2: deposit ZnO, Al successively on the hearth electrode that step 1 obtains
2o
3film, wherein, the thickness of ZnO film is 180 ~ 200nm, Al
2o
3the thickness of film is 5 ~ 8nm, described ZnO film and Al
2o
3film constitutes the resistive memory medium layer of resistance-variable storing device jointly;
Step 3: the ZnO film obtained in step 2 and Al
2o
3the resistive memory medium layer of film composition prepares top electrode.
Further, ZnO film described in step 2 and Al
2o
3film adopts pulsed laser deposition preparation, and underlayer temperature remains on room temperature, utilizes ZnO, Al
2o
3ceramic target deposit film.
Further, when depositing ZnO film described in step 2, the target of employing is ZnO ceramic target, and the depositing temperature of film is room temperature, and oxygen pressure is 10Pa, and the thickness of deposition ZnO film is 180 ~ 200nm; Depositing Al
2o
3during film, the target of employing is Al
2o
3ceramic target, the depositing temperature of film is room temperature, and oxygen pressure is 7Pa, depositing Al
2o
3the thickness of film is 5 ~ 8nm.
Further, top electrode described in hearth electrode described in step 1 and step 3 adopts the methods such as sputtering, pulsed laser deposition, chemical vapour deposition (CVD), sol-gel process, electron-beam vapor deposition method to prepare.
Beneficial effect of the present invention is: the resistive memory medium layer of the flexible resistance-variable storing device of the present invention is ZnO film and Al
2o
3the double-layer film structure of film composition, the flexible resistance-variable storing device of the present invention can at room temperature be prepared, and has excellent processing compatibility; Resistance-variable storing device of the present invention is under direct voltage trigger condition, and show the transformation between good high low resistance state and memory characteristic, the ratio of its high low resistance is more than 10
3, the state retention time after memory power-off is at least 10
3more than s; Resistance-variable storing device of the present invention, after more than 100 times wide-angles are bending, still keep good resistance switching performance, has good stability.
Accompanying drawing explanation
Fig. 1 is the structural representation of the flexible resistance-variable storing device of the embodiment of the present invention;
Fig. 2 is the I-V curve of the flexible resistance-variable storing device of the embodiment of the present invention;
Fig. 3 is the resistance change curve chart of flexible resistance-variable storing device at room temperature after 200 direct voltage upsets of the embodiment of the present invention;
Fig. 4 is the high low-resistance value at room temperature time history plot of the flexible resistance-variable storing device of the embodiment of the present invention;
Fig. 5 is the resistance change curve chart 200 direct voltage upset after of flexible resistance-variable storing device after bending through 100 wide-angles of the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the invention will be described further and explanation.
Embodiment
As shown in Figure 1, for a kind of resistive memory medium layer provided by the invention is Al
2o
3with the structural representation of the flexible resistance-variable storing device of ZnO double-layer film structure, described flexible resistance-variable storing device is followed successively by hearth electrode, ZnO film layer, the Al of PET flexible substrate, Ti layer and Au layer composition from bottom to top
2o
3the top electrode of thin layer, Ti layer and Au layer composition.
Further, the thickness of described ZnO film layer is 180 ~ 200nm, described Al
2o
3the thickness of thin layer is 5 ~ 8nm.
Further, the thickness of described Ti layer is the thickness of 20nm ~ 30nm, Au layer is 200nm.
The detailed process utilizing pulsed laser deposition technique (PLD) to prepare above-mentioned flexible resistance-variable storing device is:
The cleaning of step 1, flexible substrate: by PET flexible substrate successively ultrasonic cleaning 5 ~ 10 minutes in acetone and ethanolic solution respectively, and adopt nitrogen to dry up;
The preparation of step 2, hearth electrode: adopt electron beam evaporation method, depositing Ti layer and Au layer successively on the PET substrate that step 1 cleans up, the thickness of Ti layer is the thickness of 20nm ~ 30nm, Au layer is about 200nm;
Step 3: the hearth electrode adopting pulsed laser deposition to obtain in step 2 deposits ZnO film and Al successively
2o
3film is as resistive memory medium layer, and detailed process is: be first fixed on target platform by ZnO target in the chamber of pulse laser thin film deposition system, and be fixed on substrate table by the flexible substrate preparing hearth electrode; This chamber is evacuated to 10
-3below Pa, then passes into purity oxygen in chamber, make oxygen pressure remain on needs numerical value (deposition ZnO film time be 10Pa, depositing Al
2o
3be 7Pa during film), after stable gas pressure, start KrF excimer laser, laser beam is gathered on target, start deposit film; The thickness of the ZnO film of deposition is 180 ~ 200nm, Al
2o
3the thickness of film is 5 ~ 8nm;
Step 4: the preparation of top electrode: the Al obtained in step 3
2o
3film is placed metal mask version, the area of each point electrode is 0.2mm
2, adopt electron-beam vapor deposition method depositing Ti layer and Au layer successively, obtain top electrode, the thickness of Ti layer is the thickness of 20nm ~ 30nm, Au layer is about 200nm.
Fig. 2 is the I-V curve of the flexible resistance-variable storing device that the embodiment of the present invention obtains, and as shown in Figure 2, resistance-variable storing device of the present invention is typical single stage transition process under the effect of additional dc sweeps voltage.To apply positive voltage to top electrode, as shown in the figure, to 1 process, when applying voltage from 0, memory cell shows high resistant characteristic, and when voltage reaches about 1V, electric current increases rapidly and reaches capacity, and memory cell is converted to low resistive state.To 2 processes, when again applying voltage from 0, memory cell is low resistive state, and when voltage reaches about 0.3V, electric current diminishes rapidly and changes high-impedance state into.
Fig. 3 is the resistance change curve chart of flexible resistance-variable storing device at room temperature after 200 direct voltage upsets that the embodiment of the present invention obtains.Wherein X-axis is voltage upset number of times, and Y-axis is resistance value (reading under the voltage of 0.1V).As shown in Figure 3, under room temperature condition, after alternately applying voltage change resistance value, resistance value is alternately change between about 9 Ω (low resistance state, LRS) and about 10000 Ω (high resistance state, HRS); And still good in performance after the upset of 200 times, show that resistance-variable storing device of the present invention has good fatigue resistance.
Fig. 4 is the high low-resistance value at room temperature time history plot of the flexible resistance-variable storing device of the embodiment of the present invention, and wherein X-axis is the time, and Y-axis is resistance value, and reading voltage is 0.1V.As shown in Figure 4, at ambient temperature, memory height low resistance state of the present invention 1000s long-time in still keep at least 1000 difference, show that resistance-variable storing device of the present invention has non-volatile holographic storage function.
Fig. 5 is the resistance change curve chart 200 direct voltage upset after of the flexible resistance-variable storing device of the embodiment of the present invention after bending through 100 wide-angles, and wherein X-axis is voltage upset number of times, and Y-axis is resistance value.As shown in Figure 5, no matter high low resistance state, after 100 times bending, there is not obvious change in its resistance value, shows that resistance-variable storing device of the present invention has good stability.
To sum up, flexible resistance-variable storing device provided by the invention has good readwrite performance and fatigue resistance, after 100 times bending, still have good anti-fatigue performance.The flexible resistance-variable storing device of the present invention has potential application in flexibility storage and circuit field.
Claims (8)
1. a flexible resistance-variable storing device for double-layer film structure, is followed successively by flexible substrate, hearth electrode, ZnO film layer, Al from the bottom up
2o
3thin layer and top electrode, described ZnO film layer and Al
2o
3thin layer constitutes the resistive memory medium layer of resistance-variable storing device jointly.
2. the flexible resistance-variable storing device of double-layer film structure according to claim 1, is characterized in that, the thickness of described ZnO film layer is 180 ~ 200nm, described Al
2o
3the thickness of thin layer is 5 ~ 8nm.
3. the flexible resistance-variable storing device of double-layer film structure according to claim 1, it is characterized in that, described hearth electrode is one or more in Au, Ti, Pt, Al, Cu, Ag, and described top electrode is one or more in Au, Ti, Pt, Al, Cu, Ag.
4. the flexible resistance-variable storing device of double-layer film structure according to claim 1, is characterized in that, described hearth electrode and top electrode are by the thick Au layer of 200nm and the thick Ti layer composition of 20nm ~ 30nm.
5. the flexible resistance-variable storing device of double-layer film structure according to claim 1, is characterized in that, described flexible substrate is PETG, polyethersulfone resin or polybutylene terephthalate.
6. a preparation method for the flexible resistance-variable storing device of double-layer film structure, comprises the following steps:
Step 1: prepare hearth electrode on flexible substrates;
Step 2: deposit ZnO, Al successively on the hearth electrode that step 1 obtains
2o
3film, wherein, the thickness of ZnO film is 180 ~ 200nm, Al
2o
3the thickness of film is 5 ~ 8nm, described ZnO film and Al
2o
3film constitutes the resistive memory medium layer of resistance-variable storing device jointly;
Step 3: the ZnO film obtained in step 2 and Al
2o
3the resistive memory medium layer of film composition prepares top electrode.
7. the preparation method of the flexible resistance-variable storing device of double-layer film structure according to claim 6, it is characterized in that, when depositing ZnO film described in step 2, the target adopted is ZnO ceramic target, the depositing temperature of film is room temperature, oxygen pressure is 10Pa, and the thickness of deposition ZnO film is 180 ~ 200nm; Depositing Al
2o
3during film, the target of employing is Al
2o
3ceramic target, the depositing temperature of film is room temperature, and oxygen pressure is 7Pa, depositing Al
2o
3the thickness of film is 5 ~ 8nm.
8. the preparation method of the flexible resistance-variable storing device of double-layer film structure according to claim 6, it is characterized in that, top electrode described in hearth electrode described in step 1 and step 3 adopts sputtering, pulsed laser deposition, chemical vapour deposition (CVD), sol-gel process or electron-beam vapor deposition method to prepare.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192856A (en) * | 2018-08-23 | 2019-01-11 | 北京航空航天大学 | A method of regulating and controlling conductive bridge memory conductive path randomness |
| CN109473547A (en) * | 2018-10-29 | 2019-03-15 | 江苏师范大学 | Bionical device of a kind of flexibility cynapse and preparation method thereof |
| CN109980083A (en) * | 2019-04-17 | 2019-07-05 | 河南大学 | A kind of small area electrode resistance-variable storing device of filament mechanism and preparation method thereof |
| CN109994605A (en) * | 2019-04-17 | 2019-07-09 | 河南大学 | A kind of resistance-variable storing device and preparation method thereof of electrode structure multiplexing |
| CN110932694A (en) * | 2019-11-20 | 2020-03-27 | 电子科技大学 | Film bulk acoustic resonator |
| CN112510148A (en) * | 2020-12-08 | 2021-03-16 | 扬州大学 | Resistive random access memory and preparation method thereof |
| CN112802964A (en) * | 2021-01-18 | 2021-05-14 | 西交利物浦大学 | Memristor with synapse-like long-term plasticity and preparation method thereof |
| CN112909166A (en) * | 2021-01-26 | 2021-06-04 | 天津理工大学 | Nerve synapse bionic device based on polyelectrolyte double-layer structure |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192856A (en) * | 2018-08-23 | 2019-01-11 | 北京航空航天大学 | A method of regulating and controlling conductive bridge memory conductive path randomness |
| CN109473547A (en) * | 2018-10-29 | 2019-03-15 | 江苏师范大学 | Bionical device of a kind of flexibility cynapse and preparation method thereof |
| CN109473547B (en) * | 2018-10-29 | 2022-03-15 | 江苏师范大学 | Flexible synapse bionic device and preparation method thereof |
| CN109980083A (en) * | 2019-04-17 | 2019-07-05 | 河南大学 | A kind of small area electrode resistance-variable storing device of filament mechanism and preparation method thereof |
| CN109994605A (en) * | 2019-04-17 | 2019-07-09 | 河南大学 | A kind of resistance-variable storing device and preparation method thereof of electrode structure multiplexing |
| CN109980083B (en) * | 2019-04-17 | 2024-06-07 | 河南大学 | Small-area electrode resistance random access memory with filament mechanism and preparation method thereof |
| CN110932694A (en) * | 2019-11-20 | 2020-03-27 | 电子科技大学 | Film bulk acoustic resonator |
| CN112510148A (en) * | 2020-12-08 | 2021-03-16 | 扬州大学 | Resistive random access memory and preparation method thereof |
| CN112802964A (en) * | 2021-01-18 | 2021-05-14 | 西交利物浦大学 | Memristor with synapse-like long-term plasticity and preparation method thereof |
| CN112909166A (en) * | 2021-01-26 | 2021-06-04 | 天津理工大学 | Nerve synapse bionic device based on polyelectrolyte double-layer structure |
| CN112909166B (en) * | 2021-01-26 | 2022-11-25 | 天津理工大学 | Nerve synapse bionic device based on polyelectrolyte double-layer structure |
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Application publication date: 20151230 |