CN103500797B - Random access memory unit and manufacture method thereof - Google Patents
Random access memory unit and manufacture method thereof Download PDFInfo
- Publication number
- CN103500797B CN103500797B CN201310487881.XA CN201310487881A CN103500797B CN 103500797 B CN103500797 B CN 103500797B CN 201310487881 A CN201310487881 A CN 201310487881A CN 103500797 B CN103500797 B CN 103500797B
- Authority
- CN
- China
- Prior art keywords
- layer
- resistive material
- material laminate
- random access
- access memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
Disclose a kind of random access memory unit and manufacture method thereof.Described random access memory unit includes: hearth electrode；Top electrode；And the resistive material laminate between hearth electrode and top electrode, wherein said resistive material laminate includes at least two-layer being formed by different resistive materials and directly being contacted.This random access memory unit may be used for high switch resistance than the nonvolatile memory with high stability.
Description
Technical field
The invention belongs to microelectronics technology, more particularly to random access memory unit and manufacture thereof
Method.
Background technology
Nonvolatile memory remains to preserve for a long time the characteristic of storage inside data after having power supply drop,
It is made to be widely used in various handheld terminal communication and multimedia equipment.Main flow is non-in the market
Volatile memory is flash storage, and it is high that flash storage has simple in construction storage density
Outside programming repeatable with electric erasable, also there is low cost height and clash speed and high reliability etc.
Advantage, but flash storage also exists obvious defect and problem.On the one hand, deposit due to Flash
The write voltage of reservoir is higher, and read or write speed is relatively slow (read-write/erasing time: 1ms/0.1ms),
Erasable number of times ratio is relatively low > 105Secondary.On the other hand, flash storage general principle is to utilize floating boom
Electric charge memory technology changes the threshold property of metal-oxide-semiconductor and stores to realize data, reduces chi further
Very little the too small tunneling effect causing electronics of corresponding gate insulation layer thickness will be caused gradually to manifest, electric leakage
Stream is increased dramatically, thus affects stablizing of device.
At present, the novel nonvolatile memory of most possible replacement traditional flash memory is main
Have: ferroelectric memory (FRAM) magnetic memory (MRAM) phase transition storage (PRAM)
With resistance-variable storing device (RRAM).Resistance-variable storing device (RRAM) is based on some oxide materials
The transition effect of resistance is occurred to grow up under DC voltage or pulse voltage are induced.
RRAM generally includes hearth electrode, top electrode and folder resistance change material layer between two electrodes.
Resistive material is usually transition metal oxide, such as HfO2、NiO、TiO2、ZrO2、ZnO、
MgO、WO3、Ta2O5、Al2O3、MoOx、CeOx、La2O3、Pr0.7Ca0.3MnO3、
La1-xCaxMnO3Etc., and the elements such as such as Al, Gd, La, Sr, Ti can be used to carry out
Doping.Resistive material can show two stable states, i.e. high-impedance state and low resistance state, respectively
Corresponding digital " 0 " and " 1 ".RRAM use voltage pulse change resistive material resistance state and
After power-off, its resistance state keeps constant.RRAM has simple in construction storage density height read-write speed
Spend fast information and keep stablizing low in energy consumption there is fixedness, and be easily achieved 3 D stereo
The integrated advantage with multilevel storage.
However, it is expected that improve further the resistance transformation characteristic of RRAM to obtain good application before
Scape.
Summary of the invention
It is an object of the invention to provide a kind of high switch resistance than the resistance-variable storing device with high stability
Unit and manufacture method thereof.
According to an aspect of the present invention, it is provided that a kind of random access memory unit, including hearth electrode；
Top electrode；And the resistive material laminate between hearth electrode and top electrode, wherein said resistive
Material laminate includes at least two-layer being formed by different resistive materials and directly being contacted.
According to a further aspect in the invention, it is provided that a kind of method manufacturing random access memory unit, bag
Include: form hearth electrode；Hearth electrode is formed resistive material laminate, described resistive material laminate bag
Include at least two-layer being formed by different resistive materials and directly being contacted；And fold at resistive material
Top electrode is formed on Ceng.
Preferably, one layer in described at least two-layer is made up of binary metal oxide.
Preferably, another layer in described at least two-layer is made up of perovskite oxide.
Preferably, described binary metal oxide include following any one: HfO2、NiO、TiO2、
ZrO2、ZnO、MgO、WO3、Ta2O5、Al2O3、MoOx、CeOx、La2O3And appoint
Meaning combination, wherein x=0-1.
Preferably, described perovskite oxide include following any one: Pr0.7Ca0.3MnO3、
La1-xCaxMnO3And any combination, wherein x=0-1.
Described memory cell two Resistance states of performance.
It is an advantage of the current invention that:
Random access memory unit according to the present invention utilizes compound resistive material laminate to replace individual layer
Resistance change material layer, due to the interfacial effect of two-layer resistive material, reduces the leakage current of device, carries
The high stability of device change resistance performance.This random access memory unit shows the high low-resistance of excellence
Conversion characteristic between state, shows two Resistance states, and the difference between its high low resistance state can be more than 104
Times.This random access memory unit this difference after repeatedly changing is stable, with single resistive material
The resistance-variable storing device of layer is compared and is improve write performance and erasable number of times, extends storage life.
This random access memory unit also reduces electric resistance changing voltage, and then reduces the power consumption of device.Excellent
In the embodiment of choosing, laminated film has good light transmission to visible ray, can be applicable to non-volatile
Transparent memory.
The preparation of film can use the preparation methods such as magnetron sputtering pulsed laser deposition, has wide
Development space and market prospects.
Accompanying drawing explanation
Fig. 1 is the structural representation of random access memory unit according to an embodiment of the invention.
Fig. 2 is the I-V characteristic figure of random access memory unit according to an embodiment of the invention.
Fig. 3 is high-impedance state and the low resistance state of random access memory unit according to an embodiment of the invention
Resistance with the change of switch cycles number of times.
Fig. 4 is the light transmittance to visible ray of random access memory unit according to an embodiment of the invention.
Detailed description of the invention
It is more fully described the present invention hereinafter with reference to accompanying drawing.For the sake of clarity, each in accompanying drawing
Individual part is not necessarily to scale.
Should be appreciated that when the structure of outlines device, when by one layer, region be referred to as being positioned at another
One layer, another region " above " or " top " time, can refer to be located immediately at another layer, another
Above region, or itself and another layer, also comprise other layer or region between another region.
Further, if device is overturn, this layer, region will be located in another layer, another region " under
Face " or " lower section ".If being located immediately at another layer, another region above scenario to describe,
Herein will use " directly exist ... above " or " ... adjoin above and therewith " form of presentation.
Describe hereinafter many specific structures of details, such as device of the present invention, material,
Size, process technique and technology, in order to be more clearly understood that the present invention.But the skill as this area
Art personnel it will be appreciated that as, the present invention can not be realized according to these specific details.Remove
Non-hereinafter particularly pointing out, the various piece of memory cell can be by those skilled in the art
Known material is constituted.The present invention can present in a variety of manners, some of them example explained below.
Fig. 1 is the structural representation of random access memory unit 100 according to an embodiment of the invention.
Random access memory unit 100 includes substrate 101, be positioned on substrate 101 hearth electrode 102, it is positioned at
The first resistance change material layer 103 on hearth electrode 102, the be positioned on the first resistance change material layer 103
Two hinder change material layers 104 and are positioned at the top electrode 105 on the second resistance change material layer 104.
Substrate 101 can be transparent flexible or inflexibility substrate, such as polyethylene terephthalate
Ester (PET) and glass etc..
Hearth electrode 102 can be transparent conductive oxide ITO or FTO film, and thickness is 100-200
Nanometer.
First resistance change material layer 103 and the second resistance change material layer 104 can be respectively by binary metal oxygen
Compound and perovskite oxide composition.Described binary metal oxide include following any one: HfO2、
NiO、TiO2、ZrO2、ZnO、MgO、WO3、Ta2O5、Al2O3、MoOx、CeOx、
La2O3And any combination, wherein x=0-1.Described perovskite oxide include following any one:
Pr0.7Ca0.3MnO3、La1-xCaxMnO3And any combination, wherein x=0-1.
In an example, the first resistance change material layer 103 can be made up of ZnO or MgO, thick
Degree is 50-100 nanometer.Second resistance change material layer 104 can be by Pr0.7Ca0.3MnO3Composition is thick
Degree is 50-200 nanometer.
Top electrode 105 can be transparent conductive oxide ITO or FTO film, and thickness is 100-200
Nanometer.
In a preferred embodiment, layer 101-105 is all transparent, thus constitutes transparent together
Random access memory unit 100.It will be appreciated, however, that any layer in layer 101-105 or multilayer
Can be nontransparent, still can apply to resistance-variable storing device.Additionally, resistive material laminate bag
Include the first resistance change material layer 103 and the second resistance change material layer 104 of directly contact.But, it should
Understanding, resistive material laminate can also include more hindering change material layer.
According to preferred embodiment, manufacture random access memory unit according to an embodiment of the invention
The method of 100 comprises the following steps.
Transparent flexible or non-flexible material is used to make substrate 101.The substrate 101 used is used wine
Essence Ultrasonic Cleaning three times, each ten minutes, finally cleans by deionized water.
Then, hearth electrode 102 is formed on the substrate 101.The preparation of hearth electrode 102 can be with swashing
Light pulse deposits.Settling chamber's background vacuum must be higher than 10-4Pa, oxygen pressure is 5Pa～10Pa, heavy
Accumulated temperature degree is room temperature, and during deposition, energy is 100mJ～400mJ, and umber of pulse is 100～3000 pulses.
Hearth electrode 102 e.g. conductive oxide film, thickness is 100nm～200nm.
Then, hearth electrode 102 is formed the first resistance change material layer 103.First resistance change material layer
The preparation of 103 can use pulsed laser deposition.Settling chamber's background vacuum must be higher than 10-4Pa,
Oxygen pressure is 1Pa～10Pa, and depositing temperature is room temperature, and during deposition, energy is 100mJ～400mJ, arteries and veins
Strokes per minute is 100～3000 pulses.First resistance change material layer 103 e.g. binary metal oxide is thin
Film, thickness is 50nm～100nm.
Then, the first resistance change material layer 103 forms the second resistance change material layer 104.Second resistance
The preparation of change material layer 104 can use pulsed laser deposition.Settling chamber's background vacuum must be higher than
10-4Pa, during sputtering, oxygen pressure is 5～20Pa, and depositing temperature is room temperature, and during deposition, energy is 100mJ
～400mJ, umber of pulse is 100～3000 pulses.Second resistance change material layer 104 is e.g.
Pr0.7Ca0.3MnO3Film, thickness is 50-200nm.
Then, the second resistance change material layer 104 forms top electrode 105.The system of top electrode 105
Preparation Method can be magnetron sputtering.Sputtering chamber background vacuum must be higher than 10-5Pa, sputter temperature is
Room temperature, sputtering pressure is 0.1～1Pa.Top electrode 105 e.g. ito thin film, thickness is
1000-200nm。
In an example, utilize pulsed laser deposition in the upper deposition of substrate 101 (ITO/ glass)
Hearth electrode 102 (zinc-oxide film).Taking out when settling chamber's base vacuum is 5 × 10-4During Pa, it is passed through oxygen
Qi Shi settling chamber reaches the operating pressure of 10pa, and depositing temperature is room temperature, and during deposition, energy is 300
MJ, umber of pulse 3000 pulse, thus form the first resistance change material layer 103 (zinc-oxide film),
Thickness is 80nm.Then, change material layer 104 is hindered further with pulsed laser deposition second
(Pr0.7Ca0.3MnO3Film), deposition pressure is 10pa, and depositing temperature is room temperature, energy during deposition
Amount is 300mJ, umber of pulse 4000 pulse.The thickness of the second resistance change material layer 104 is 100nm.
Then, utilize magnetron sputtering to block method by mask and form top electricity on the second resistance change material layer 104
Pole 105 (ito thin film).The most a diameter of 0.2mm's of top electrode 105 is round-shaped, thickness
For 200nm.
Fig. 2 is the I-V characteristic of the random access memory unit 100 using the method for examples detailed above to manufacture
Figure.When scanning voltage is-2.2V, memory cell is changed into low resistance from high resistance；Work as scanning
When voltage is 2V, memory cell is changed into high resistance from low resistance, and shift voltage absolute value is at 2V
Left and right, this greatly reduces the power consumption of device.
Fig. 3 be use examples detailed above method manufacture random access memory unit 100 high-impedance state and
The resistance of low resistance state (is expressed as RHAnd RL) with the change of switch cycles number of times.From this figure
It can be seen that this novel Memister is under DC voltage scans continuously, high switch resistance
Than being more than 104Times.During the high low resistance of continuous 250 times circulate, high low resistance is still
So show preferable stability.Thus, compared with the resistance-variable storing device of single resistance change material layer,
Write performance and erasable number of times are all significantly improved.
Fig. 4 be use examples detailed above method manufacture random access memory unit 100 to visible ray
Light transmittance.From this figure it can be seen that memory cell under wavelength 590nm visible ray, light transmittance is
It is high that up to 84.6%, under wavelength is 450-750nm visible ray, average transmittance is 80.6%,
There is good light transmission.Thus, the present invention has potential answering on non-volatile transparent memory
By value.
Above-described embodiment is the citing of the present invention, although disclosing the reality of the present invention for the purpose of illustration
Execute example and accompanying drawing, but it will be appreciated by those skilled in the art that: without departing from the present invention and appended
Spirit and scope by the claims in, various replacements, to change and modifications be all possible.Therefore,
The present invention should not be limited to embodiment and accompanying drawing disclosure of that.
Claims (4)
1. a random access memory unit, including:
Transparent flexible substrate；
It is positioned at the hearth electrode on transparent flexible substrate；
The resistive material laminate being positioned on hearth electrode；And
It is positioned at the top electrode on resistive material laminate,
Wherein said resistive material laminate includes being made up of different resistive materials and directly contact
At least two-layer,
Described hearth electrode and described resistive material laminate all use pulsed laser deposition, described top electrode
Employing magnetron sputtering is formed, and described hearth electrode, described resistive material laminate and described top electrode
It is transparent,
One layer in described at least two-layer is made up of binary metal oxide, and another layer is by perovskite oxygen
Compound forms,
Wherein, the thickness of described a layer in described at least two-layer is 50-100 nanometer, described at least
The thickness of another layer described in two-layer is 50-200 nanometer.
Random access memory unit the most according to claim 1, wherein said memory cell table
Existing two Resistance states.
3. the method manufacturing random access memory unit, including:
Transparent flexible substrate is formed hearth electrode；
Forming resistive material laminate on hearth electrode, described resistive material laminate includes by different resistives
Material composition and at least two-layer directly contacted；And
Resistive material laminate is formed top electrode,
Wherein, described hearth electrode and described resistive material laminate all use pulsed laser deposition, described
Top electrode uses magnetron sputtering to be formed, and described hearth electrode, described resistive material laminate and described
Top electrode is transparent,
One layer in described at least two-layer is made up of binary metal oxide, and another layer is by perovskite oxygen
Compound forms,
The thickness of described a layer in described at least two-layer is 50-100 nanometer, in described at least two-layer
The thickness of another layer described be 50-200 nanometer.
Method the most according to claim 3, wherein said memory cell two resistance of performance
State.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310487881.XA CN103500797B (en) | 2013-10-17 | 2013-10-17 | Random access memory unit and manufacture method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310487881.XA CN103500797B (en) | 2013-10-17 | 2013-10-17 | Random access memory unit and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103500797A CN103500797A (en) | 2014-01-08 |
| CN103500797B true CN103500797B (en) | 2016-09-07 |
Family
ID=49865983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310487881.XA Expired - Fee Related CN103500797B (en) | 2013-10-17 | 2013-10-17 | Random access memory unit and manufacture method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103500797B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9431609B2 (en) * | 2014-08-14 | 2016-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Oxide film scheme for RRAM structure |
| CN105322091B (en) * | 2015-12-09 | 2018-09-25 | 中国科学院物理研究所 | A kind of light write-in variable-resistance memory unit and its preparation, operating method and application |
| CN105720195B (en) * | 2016-04-21 | 2018-07-31 | 南京理工大学 | A kind of inorganic halogen perovskite resistance-variable storing device and preparation method thereof |
| CN105957962B (en) * | 2016-06-20 | 2018-10-30 | 西安交通大学 | A kind of TiOx/Al2O3/TiOxSandwich lamination resistive random access memory film and preparation method thereof |
| CN106992249B (en) * | 2017-02-22 | 2019-05-03 | 北京航空航天大学 | A kind of ionic memristor with quantum conductance effect |
| CN108922965B (en) * | 2018-07-24 | 2020-01-31 | 湖北大学 | resistive random access memory based on perovskite material and preparation method thereof |
| CN110707212B (en) * | 2019-08-31 | 2022-07-26 | 郑州大学 | Application of PVAm modified OHP film, polymer perovskite RRAM device and preparation method thereof |
| CN110739395A (en) * | 2019-10-30 | 2020-01-31 | 上海华力微电子有限公司 | Resistive random access memory and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1437241A (en) * | 2002-02-07 | 2003-08-20 | 夏普株式会社 | Variable electrical risistance device, producing method of variable resistance memory and memory |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7608467B2 (en) * | 2004-01-13 | 2009-10-27 | Board of Regents University of Houston | Switchable resistive perovskite microelectronic device with multi-layer thin film structure |
| KR100669854B1 (en) * | 2005-07-05 | 2007-01-16 | 삼성전자주식회사 | Unit cell structure and method of forming the unit cell structure, and non-volatile memory device having the unit cell structure and method of manufacturing the non-volatile memory device |
| KR101016266B1 (en) * | 2008-11-13 | 2011-02-25 | 한국과학기술원 | Transparent memory for transparent electronics |
-
2013
- 2013-10-17 CN CN201310487881.XA patent/CN103500797B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1437241A (en) * | 2002-02-07 | 2003-08-20 | 夏普株式会社 | Variable electrical risistance device, producing method of variable resistance memory and memory |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103500797A (en) | 2014-01-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103500797B (en) | Random access memory unit and manufacture method thereof | |
| US8426841B2 (en) | Transparent memory for transparent electronic device | |
| CN103633242B (en) | A kind of have resistance-variable storing device of self-rectifying characteristic and preparation method thereof | |
| CN102610748B (en) | Nonvolatile memory unit and memory | |
| CN102270739A (en) | Resistive random access memory unit having snap switch device and making method of resistive random access memory unit | |
| Liu et al. | Bipolar resistive switching effect in Gd2O3 films for transparent memory application | |
| CN104485418A (en) | Self-gating resistance-variable memory unit and preparation method thereof | |
| CN105206744A (en) | Flexible resistive random access memory of dual-layer film structure and manufacturing method for flexible resistive random access memory | |
| CN109494301A (en) | A kind of method and its resistance-variable storing device improving resistance-variable storing device stability | |
| CN105870321B (en) | A kind of non-linear self-rectifying resistance-variable storing device and preparation method thereof | |
| CN105514268A (en) | Resistive random access memory with high on-off ratio and preparation method thereof | |
| CN108493336A (en) | Self-rectifying resistance-variable storing device and preparation method thereof | |
| CN101783388A (en) | Non-volatile resistor change type memory with self-rectification effect | |
| CN105185904B (en) | A kind of more resistance state double-layer film structure resistive holders and preparation method thereof | |
| CN102931343A (en) | Resistance random access memory and method for reducing forming voltage of resistance random access memory | |
| CN102142516A (en) | Resistance random access memory with self-selection crosstalk-resistant function and cross array memory circuit | |
| CN103730572A (en) | Complementary type resistance random access memory and manufacturing method thereof | |
| CN102931347A (en) | Resistive random access memory and preparation method thereof | |
| CN113113536A (en) | Transparent multi-value nonvolatile resistance change memory unit and preparation method thereof | |
| CN103236497B (en) | A kind of resistance-variable storing device based on bismuth titanates and preparation method thereof | |
| CN105336852B (en) | RRAM memory cell structures with self-rectification effect and preparation method thereof | |
| CN101958400A (en) | Flexible resistance change memory and manufacturing method thereof | |
| CN102646790B (en) | Non-volatile memory | |
| CN103177761A (en) | Resistance-variable memory device and operation method thereof | |
| CN103247335A (en) | Memory device and array thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160907 Termination date: 20211017 |