CN105514268A - Resistive random access memory with high on-off ratio and preparation method thereof - Google Patents
Resistive random access memory with high on-off ratio and preparation method thereof Download PDFInfo
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- CN105514268A CN105514268A CN201510957045.2A CN201510957045A CN105514268A CN 105514268 A CN105514268 A CN 105514268A CN 201510957045 A CN201510957045 A CN 201510957045A CN 105514268 A CN105514268 A CN 105514268A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 33
- 239000001301 oxygen Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 20
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000036961 partial effect Effects 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000003860 storage Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000004048 modification Effects 0.000 abstract description 2
- 238000012986 modification Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
- 230000004069 differentiation Effects 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 229930194542 Keto Natural products 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 125000000468 ketone group Chemical group 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention belongs to the technical field of modification and manufacture of a nonvolatile memory in a CMOS very-large-scale integrated circuit, and specifically relates to a resistive random access memory with high on-off ratio and a preparation method thereof. The resistive random access memory with high on-off ratio sequentially comprises, from top to bottom, a top electrode, a resistive material layer, a bottom electrode, an adhesive layer and a substrate. The resistive material layer is composed of three layers of homojunction metal oxide, and the oxygen vacancy concentration of the intermediate layer of the three-layer homojunction metal oxide structure is greater than that of the other two layers. The substrate is a Si substrate of which the surface is provided with a layer of SiO2 formed through thermal oxidation. According to the invention, by controlling oxygen partial pressure of the three layers of homojunction, the three layers are of different oxygen vacancy concentration, oxygen vacancy is easier to move, a higher on-off ration is achieved, the storage states of different information can be better distinguished, and crosstalk is avoided.
Description
Technical field
The present invention relates to resistance-variable storing device (RRAM), be specifically related to a kind of high on-off ratio resistance-variable storing device and preparation method thereof, belong to modification and the manufacturing technology field thereof of the nonvolatile memory (Nonvolatilememory) in cmos vlsi (ULSI).
Background technology
In recent years, along with expanding economy, the demand of market to Large Copacity, high density, low-power consumption, low cost, portable memory improves greatly.But at semiconductor technology node constantly forward in progressive process, representative nonvolatile memory Flash now encounters inevitable shortcoming, such as: operating voltage is large, operating rate is slow etc.Cannot meet market require that the superelevation storage density of nonvolatile memory.Therefore, obtain important breakthrough at storage material and technical field, the non-volatile memory technologies of Development of New Generation is particularly urgent.
Novel nonvolatile memory comprises ferroelectric memory (FRAM), magnetic memory (MRAM), phase transition storage (PRAM) and resistance-variable storing device (RRAM).Wherein, resistance-variable storing device owing to having device architecture simple (M-I-M), preparation technology is simple, operating voltage is low, erasable speed fast, multilevel storage, with the advantage such as CMOS technology is now compatible and as one of the most contenders of novel nonvolatile memory of future generation.After applying suitable applied voltage to resistance-variable storing device, device resistance mutually can be changed between high-impedance state and low resistance state, thus realizes ' 0 ' of information and the storage of ' 1 '.And the on-off ratio (R of device
hRS/ R
lRS) determine the storage capacity of device, the differentiation degree between the store status embodying different information.
At present, lots of memory is not obvious for the differentiation of the store status of different information, causes the existence of " crosstalk " problem, has had a strong impact on the accuracy reading data, has been unfavorable for the application of resistance-variable storing device in reality.Therefore, how solving the discrimination of the store status of different information not high enough is current urgent problem.
Research finds, the growth of oxygen dividing potential drop of conservative control three layers of homojunction metal oxide can obtain the resistive phenomenon of high on-off ratio, thus effectively solves the not high enough problem of discrimination between different information storage states.
The people such as the photoelectric material of Zhongshan University and the W.J.Ma of technology National Key Laboratory have studied Pt/TiO
2/ BaTiO
3/ TiO
2/ Pt resistance-variable storing device, finds in this structure, TiO
2serve as the saver of Lacking oxygen, and BaTiO
3serve as Lacking oxygen provider, this three-decker for Lacking oxygen concentration and be distributed with great impact.And among resistance-variable storing device, Lacking oxygen plays the role of core always, regulate and control oxygen vacancy concentration and distributed to obtain larger on-off ratio, thus the difference degree of memory for the store status of different information can have been improved.But their work mainly concentrates on the basis of heterojunction, complex process, and the I-V curve on-off ratio obtained is about tens times.
Summary of the invention
Based on above problem, the invention provides a kind of high on-off ratio resistance-variable storing device and preparation method thereof, by same metal oxide resistive material film is grown into three layers of homojunction structure according to different partials pressure of oxygen, to realize the movement reasonably regulating and controlling Lacking oxygen, thus obtain high on-off ratio, differentiation degree between the store status of different information is uprised, improves the storage capacity of memory.
Technical scheme of the present invention is as follows:
A kind of high on-off ratio resistance-variable storing device, comprise top electrode, resistive material layer, hearth electrode, adhesive linkage, substrate from top to bottom successively, it is characterized in that: described resistive material layer is that the metal oxide of three layers of homojunction is formed, and the intermediate layer oxygen vacancy concentration of these three layers of homojunction metal oxide structures is greater than two boundary layers.
Described substrate adopts surface heat oxygen one deck SiO
2si sheet.
Described hearth electrode and top electrode material are conducting metal or metal nitride.
The material of described resistive material layer is the TiO in binary metal oxide
x, HfO
x, ZrO
x, NiO
x, ZnO
x, or TaO
x.
Described top electrode is the circular point electrode of diameter 200 μm.
The homojunction metal oxide in the intermediate layer in described resistive material layer is greater than at least one magnitude of oxygen vacancy concentration of two boundary layers, and the multiplying power of each magnitude is 10 times.
The preparation method of the resistance-variable storing device of this high on-off ratio, comprises the following steps:
Step 1, on silicon chip hot oxide growth insulating barrier SiO
2obtained substrate;
Step 2, on the substrate that step 1 is obtained sputtering or evaporated metal Ti and M successively, wherein Ti is tack coat, and M is hearth electrode;
Step 3, on hearth electrode M, prepare three layers of homojunction metal oxide that oxygen vacancy concentration intermediate layer is greater than both sides from bottom to top successively, i.e. resistive material layer, then carries out in-situ annealing process to it; Preparation method is by pulsed laser deposition, in same cavity, deposit three layers of resistive material successively by regulation and control partial pressure of oxygen;
Step 4, on resistive material layer sputtering or electron beam evaporation prepare top electrode.
The present invention passes through:
(1) preparation technology and CMOS technology compatibility, and it does not increase new processing step compared to general RRAM, simple to operate, easily realize.
(2) by the growth of oxygen dividing potential drop of control three layers of homojunction, thus cause their oxygen vacancy concentration different, Lacking oxygen is more easily moved, to obtain higher on-off ratio, thus the store status between different information is distinguished better, and then avoid crosstalk phenomenon.
In sum, the present invention and undressed skill difficulty, also effectively improve the differentiation degree of memory to data, and avoid crosstalk phenomenon.
Accompanying drawing explanation
The basic structure schematic cross-section of Fig. 1 resistance-variable storing device of the present invention;
The I-V curve of Fig. 2 resistance-variable storing device of the present invention;
The Lacking oxygen distribution schematic diagram of Fig. 3 resistance-variable storing device of the present invention;
Reference numeral: top electrode-1, high keto sectional pressure layer-2, low oxygen partial pressure layer-3, high keto sectional pressure layer-4, hearth electrode-5, adhesive linkage Ti-6, SiO
2layer-7, Si layer-8.
Specific embodiments
Below in conjunction with accompanying drawing and TiO
xthe preparation of resistance-variable storing device is described in further detail the present invention:
The technique of the resistance-variable storing device of high on-off ratio prepared by the present invention is described below by reference to the accompanying drawings:
1) insulating barrier is prepared.Hot oxide growth one deck SiO on silicon chip 8
2as insulating barrier 7, as shown in Figure 1;
2) hearth electrode is prepared.Splash-proofing sputtering metal Ti and Pt (thickness 200nm) successively on insulating barrier 7, wherein Ti is as adhesive linkage, and Pt is as hearth electrode;
3) resistance changing film is prepared.Ground floor 4TiO is prepared by pulsed laser deposition
x, thickness is 100nm, and partial pressure of oxygen is 10Pa, as Fig. 1; And then grow the second layer 3, thickness is 300nm, and partial pressure of oxygen is 1Pa; Last long third layer 2 again, thickness is 100nm, and partial pressure of oxygen is 10Pa;
4) top electrode is prepared.Use vacuum evaporation to prepare the circular Au point electrode that radius is 200 μm, thickness is about 200nm, as shown in Figure 1.
The present invention directly obtains different oxygen vacancy concentration distributions by the growth of oxygen dividing potential drop regulating and controlling three layers of homojunction, and (intermediate layer concentration is large, two boundary layers are little), make Lacking oxygen more easily movement, thus obtain larger on-off ratio, the store status of different information can be distinguished so better, and then avoid " crosstalk " phenomenon.
Claims (6)
1. a high on-off ratio resistance-variable storing device, comprises top electrode, resistive material layer, hearth electrode, adhesive linkage and substrate from top to bottom successively, it is characterized in that:
Described resistive material layer is that the metal oxide of three layers of homojunction is formed, and the intermediate layer oxygen vacancy concentration of these three layers of homojunction metal oxide structures is greater than two boundary layers;
Described substrate adopts surface heat oxygen one deck SiO
2si sheet.
2. high on-off ratio resistance-variable storing device as claimed in claim 1, is characterized in that: the homojunction metal oxide in the intermediate layer in described resistive material layer is greater than at least one magnitude of oxygen vacancy concentration of two boundary layers, and the multiplying power of each magnitude is 10 times.
3. high on-off ratio resistance-variable storing device as claimed in claim 1, is characterized in that: described hearth electrode and top electrode material are conducting metal or metal nitride.
4. high on-off ratio resistance-variable storing device as claimed in claim 1, is characterized in that: the material of described resistive material layer is the TiO in binary metal oxide
x, HfO
x, ZrO
x, NiO
x, ZnO
x, or TaO
x.
5. high on-off ratio resistance-variable storing device as claimed in claim 1, is characterized in that: described top electrode is the circular point electrode of diameter 200 μm.
6. the preparation method of high on-off ratio resistance-variable storing device as claimed in claim 1, comprises the following steps:
Step 1, on silicon chip hot oxide growth insulating barrier SiO
2obtained substrate;
Step 2, on the substrate that step 1 is obtained sputtering or evaporated metal Ti and M successively, wherein Ti is tack coat, and M is hearth electrode;
Step 3, on hearth electrode M, prepare three layers of homojunction metal oxide that oxygen vacancy concentration intermediate layer is greater than both sides from bottom to top successively, i.e. resistive material layer, then carries out in-situ annealing process to it; Preparation method is by pulsed laser deposition, in same cavity, deposit three layers of resistive material successively by regulation and control partial pressure of oxygen;
Step 4, on resistive material layer sputtering or electron beam evaporation prepare top electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510957045.2A CN105514268A (en) | 2015-12-18 | 2015-12-18 | Resistive random access memory with high on-off ratio and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510957045.2A CN105514268A (en) | 2015-12-18 | 2015-12-18 | Resistive random access memory with high on-off ratio and preparation method thereof |
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|---|---|
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107056280A (en) * | 2017-05-25 | 2017-08-18 | 扬州大学 | A kind of BaTiO with resistive characteristic3The preparation method of micrometer fibers |
| CN109888094A (en) * | 2019-03-06 | 2019-06-14 | 天津理工大学 | A kind of gating tube device and preparation method thereof based on doping type titanium oxide |
| CN109904313A (en) * | 2019-03-06 | 2019-06-18 | 天津理工大学 | A kind of novel homogeneity resistance-variable storing device of high-k dielectric material and preparation method thereof |
| CN110828658A (en) * | 2018-08-08 | 2020-02-21 | 北京北方华创微电子装备有限公司 | Preparation method of resistive random access memory device and resistive random access memory device |
| CN111146341A (en) * | 2020-01-02 | 2020-05-12 | 集美大学 | Preparation method of resistive random access memory with space limitation effect |
| WO2022241970A1 (en) * | 2021-05-20 | 2022-11-24 | 华中科技大学 | Memristor and preparation method therefor |
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| CN101533890A (en) * | 2009-04-03 | 2009-09-16 | 中国科学院上海硅酸盐研究所 | Transparent RRAM component with zinc oxide based homogeneous structure and manufacture method thereof |
| CN102169957A (en) * | 2011-03-12 | 2011-08-31 | 中山大学 | Bipolar resistive random access memory and preparation method thereof |
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2015
- 2015-12-18 CN CN201510957045.2A patent/CN105514268A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101533890A (en) * | 2009-04-03 | 2009-09-16 | 中国科学院上海硅酸盐研究所 | Transparent RRAM component with zinc oxide based homogeneous structure and manufacture method thereof |
| CN102169957A (en) * | 2011-03-12 | 2011-08-31 | 中山大学 | Bipolar resistive random access memory and preparation method thereof |
Non-Patent Citations (2)
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|---|
| JIE FENG ET AL.: ""Resistive Switches in Ta20S-a/Ta02-x Bilayer and Ta20S-a/Ta02-x/Ta02-y Tri-Iayer Structures"", 《NVMTS》 * |
| YOON CHEOL BAE ET AL.: ""Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and HeteroTiOx/TiON/TiOx Triple Multilayer Frameworks"", 《ADVANCED FUNCTIONAL MATERIALS》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107056280A (en) * | 2017-05-25 | 2017-08-18 | 扬州大学 | A kind of BaTiO with resistive characteristic3The preparation method of micrometer fibers |
| CN107056280B (en) * | 2017-05-25 | 2020-06-09 | 扬州大学 | BaTiO with resistance change characteristic3Preparation method of micron fiber |
| CN110828658A (en) * | 2018-08-08 | 2020-02-21 | 北京北方华创微电子装备有限公司 | Preparation method of resistive random access memory device and resistive random access memory device |
| CN109888094A (en) * | 2019-03-06 | 2019-06-14 | 天津理工大学 | A kind of gating tube device and preparation method thereof based on doping type titanium oxide |
| CN109904313A (en) * | 2019-03-06 | 2019-06-18 | 天津理工大学 | A kind of novel homogeneity resistance-variable storing device of high-k dielectric material and preparation method thereof |
| CN111146341A (en) * | 2020-01-02 | 2020-05-12 | 集美大学 | Preparation method of resistive random access memory with space limitation effect |
| WO2022241970A1 (en) * | 2021-05-20 | 2022-11-24 | 华中科技大学 | Memristor and preparation method therefor |
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Application publication date: 20160420 |
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