CN101783388A - Non-volatile resistor change type memory with self-rectification effect - Google Patents
Non-volatile resistor change type memory with self-rectification effect Download PDFInfo
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- CN101783388A CN101783388A CN200910077518A CN200910077518A CN101783388A CN 101783388 A CN101783388 A CN 101783388A CN 200910077518 A CN200910077518 A CN 200910077518A CN 200910077518 A CN200910077518 A CN 200910077518A CN 101783388 A CN101783388 A CN 101783388A
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Abstract
The invention discloses a non-volatile resistor change type memory with the self-rectification effect. The non-volatile resistor change type memory comprises an upper Pt electrode, a lower Pt electrode, a binary transition metal oxide thin film and a PtOx boundary layer, wherein the binary transition metal oxide thin film is positioned between the upper Pt electrode and the lower Pt electrode, and the PtOx boundary layer is positioned between the binary transition metal oxide thin film and the lower Pt electrode. The non-volatile resistor change type memory with the self-rectification effect has the advantages of simple structure, easy integration, low cost, compatible process with the traditional silicon planer CMOS, and the like, and is beneficial to the wide popularization and the application of the invention.
Description
Technical field
The present invention relates to microelectronic component and memory technology field, relate in particular to a kind of non-volatile resistor change type memory that has self-rectification effect based on Dyadic transition group metallic oxide electric resistance changing characteristic.
Background technology
Recently, resistor transformation type random asccess memory part (resistive random access memory, RRAM) remove outstanding advantages such as speed owing to have simple device architecture (metal-insulator-metal type), high device density, low power consumption, fast programming/sassafras, so caused showing great attention to of domestic and international major company and scientific research institutions.
The electric resistance changing memory technology is can realize the reversible basis that is converted under the control of voltage with the resistance of material between high-impedance state and low resistance state.There is numerous types of materials to be proved to be and has the electric resistance changing characteristic: (1) organic polymer, as polyimides (PI), AIDCN and CuTCNQ etc.; (2) multi-element metal oxide is as magnetoresistance material Pr
0.7Ca
0.3MnO
3And La
0.7Ca
0.3MnO
3Deng, the SrTiO of doping
3And SrZrO
3Deng; (3) Dyadic transition group metallic oxide is as NiO, Nb
2O
5, CuO
x, ZrO
2, HfO
2, Ta
2O
5, TiO
2Deng; (4) solid-state electrolytic solution material, as CuS, AgS, AgGeSe etc.Binary oxide simultaneously can be compatible completely with current CMOS technology because made is fairly simple, thereby come into one's own more.
And, mainly be divided into three kinds of structures of 1T1R, 1D1R and 1R at present for the integrated technology of RRAM device.The chip area that a device cell in these three kinds of integrated technologies need occupy is respectively 6F
2, 4F
2And 4F
2Simultaneously, 1D1R and the easier 3D that carries out of 1R structure are integrated for high density storage is used, thus high-density applications and size dwindle aspect 1D1R and 1R have bigger advantage.At present 1R structure integrated runs into a fatal problem, and that is exactly that integrated cross array structure can occur misreading and the phenomenon of crosstalk (crosstalk).The reason that produces this phenomenon is because when electric resistance changing device when on every side adjacent device is low resistance state, leak channel (as Fig. 1) can occur by these devices, thereby the judgement of the electric resistance changing device state possibility that will occur misreading hereto.
In order to address this problem, the researcher is connected in series to rectifier diode on the electric resistance changing memory device, so just can solve the phenomenon of misreading.But the current density of rectifier diode can only provide 10 at most at present
5A/cm
2, when the electric resistance changing device narrows down to tens nanometers, the current density deficiency that rectifier diode provides so that the electric resistance changing device change.
Therefore, seeking the resistor transformation type device with self-rectification effect is to solve to occur in the high density integrating process misreading and one of crosstalk phenomenon method preferably.
Summary of the invention
(1) technical problem that will solve
At misreading and crosstalk phenomenon of above-mentioned existing memory array based on binary metal oxide electric resistance changing characteristic, main purpose of the present invention is to provide that a kind of manufacturing process is simple, the electric resistance transition type memory device that has self-rectification effect of low cost of manufacture.
(2) technical scheme
For achieving the above object, the present invention proposes a kind of non-volatile resistor change type memory that has self-rectification effect, this non-volatile resistor change type memory is by last Pt electrode, following Pt electrode, Dyadic transition group metallic oxide film and PtO
xBoundary layer constitutes, wherein, the Dyadic transition group metallic oxide film between last Pt electrode and following Pt electrode, PtO
xBoundary layer is between Dyadic transition group metallic oxide film and following Pt electrode.
In the such scheme, the described method that goes up Pt electrode and the employing of following Pt electrode electron beam evaporation, magnetron sputtering or ald is made.
In the such scheme, the material that described Dyadic transition group metallic oxide film adopts is ZrO
2, NiO, TiO
2, CuO
x, ZnO, HfO
2And TaO
xIn a kind of.
In the such scheme, the thickness of described Dyadic transition group metallic oxide film is 20～200nm.
In the such scheme, described Dyadic transition group metallic oxide film adopts the method for electron beam evaporation, magnetron sputtering, sol-gel process or ald to be made.
In the such scheme, described PtO
xThe thickness of boundary layer is 1～10nm.
In the such scheme, described PtO
xBoundary layer adopts hot oxygen oxidation or plasma oxidation method to be made.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilizes the present invention, the processing technology of device and traditional cmos process compatibility.
2, the non-volatile resistor change type memory that has self-rectification effect provided by the invention, can improve misreading and disturbing phenomenon mutually of store interleaving array greatly, improve greatly the storage density of storage array, be extensive integrated the laying the first stone of the memory crossover array of 0T/1R type.
3, the non-volatile resistor change type memory that has self-rectification effect provided by the invention has simple in structurely, easy of integration, and cost is low, and the advantages such as silicon planar CMOS process compatible with traditional help extensive promotion and application of the present invention.
4, the non-volatile resistor change type memory that has self-rectification effect provided by the invention, the PtO of introducing
xBoundary layer can serve as the effect of electronic barrier, makes the electronics that is injected into negative electrode from positive electrode will cross this extra potential barrier, thereby has reduced the electric current of negative electrode to positive electrode, plays the effect of a rectification diode.This binary oxide electric resistance transition type memory that has self-rectification effect can be applied in the memory crossover array of 0T/1R type, thereby reaches the purpose that improves storage density.
Description of drawings
Fig. 1 is the leak channel schematic diagram in the integrated crossed array of 1R.
Fig. 2 is the basic structure schematic diagram of electric resistance transition type memory device; 201 is top electrode, and 302 is bottom electrode, and 403 is functional layer.
Fig. 3 is the structural representation that has the binary metal oxide non-volatile resistor change type memory device of self-rectification effect; 301 is the Pt top electrode, and 302 is the Pt bottom electrode, and 303 is the Dyadic transition group metallic oxide film, and 304 is PtO
xBoundary layer.
Fig. 4 is the schematic equivalent circuit that has the binary metal oxide non-volatile resistor change type memory device of self-rectification effect, and its equivalence is diode of a variable resistor series connection.
Fig. 5 is the i-v curve that has the binary metal oxide non-volatile resistor change type memory device of self-rectification effect.
Fig. 6 be self-rectification effect binary metal oxide non-volatile resistor change type memory device can be with schematic diagram.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 3, Fig. 3 is the structural representation that has the binary metal oxide non-volatile resistor change type memory device of self-rectification effect, and this non-volatile resistor change type memory is by last Pt electrode 301, following Pt electrode 302, Dyadic transition group metallic oxide film 303 and PtO
xBoundary layer 304 constitutes, wherein, Dyadic transition group metallic oxide film 303 between last Pt electrode and following Pt electrode, PtO
xBoundary layer 304 is between Dyadic transition group metallic oxide film and following Pt electrode.
The described method that goes up Pt electrode and the employing of following Pt electrode electron beam evaporation, magnetron sputtering or ald is made.
The material that described Dyadic transition group metallic oxide film adopts is ZrO
2, NiO, TiO
2, CuO
x, ZnO, HfO
2And TaO
xIn a kind of, the thickness of Dyadic transition group metallic oxide film is 20～200nm, the Dyadic transition group metallic oxide film adopts the method for electron beam evaporation, magnetron sputtering, sol-gel process or ald to be made.
Described PtO
xThe thickness of boundary layer is 1～10nm, described PtO
xBoundary layer adopts hot oxygen oxidation or plasma oxidation method to be made.
Before the deposit Dyadic transition group metallic oxide, the Pt bottom electrode is carried out oxidation processes, between Dyadic transition group metallic oxide and bottom electrode, generate PtO like this
xBoundary layer.PtO between Pt bottom electrode and the Dyadic transition group metallic oxide
xLayer plays the effect of electronic barrier, has hindered electronics and has flowed to negative electrode from positive electrode, thereby had self-rectifying effect.Self-rectification effect can reduce the misread phenomenon of non-volatile resistor change type memory crossed array, uses and can improve storage density greatly on the 0T/1R storage array.
In one embodiment of the invention, the SiO of heat growth one deck 200nm on the Si substrate that standard technology cleans
2Insulating barrier utilizes electron beam evaporation process, at SiO
2The successively Ti of deposit one deck 20nm and the Pt film of 80nm on the layer adopt the technology of high-temperature thermal oxidation one deck PtO that grows then on the Pt substrate
xFilm; Then utilize the ZnO film of magnetron sputtering means growth 50nm, utilize optical lithography and lift-off technology to form the basic structure that the Pt top electrode is finished entire device at last.
Fig. 5 is electric current and the voltage curve that is used for illustrating one embodiment of the invention, and the device that we can obtain this structure by the I-V curve has tangible rectification characteristic.
Fig. 6 is used for illustrating that the device of one embodiment of the invention can be with schematic diagram.We can know that the appearance of this rectifier phenomena is by PtO by this energy band diagram
xBoundary layer causes.
From the above, in an embodiment of the present invention, introduce one deck PtO by oxidation
xBoundary layer can produce self-rectification effect, and this is because the PtO that introduces
xBoundary layer can serve as the effect of electronic barrier, makes the electronics that is injected into negative electrode from positive electrode will cross this extra potential barrier, thereby has reduced the electric current of negative electrode to positive electrode, plays the effect of a rectification diode.This binary oxide electric resistance transition type memory that has self-rectification effect can be applied in the memory crossover array of 0T/1R type, thereby reaches the purpose that improves storage density.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a non-volatile resistor change type memory that has self-rectification effect is characterized in that, this non-volatile resistor change type memory is by last Pt electrode, following Pt electrode, Dyadic transition group metallic oxide film and PtO
xBoundary layer constitutes, wherein, the Dyadic transition group metallic oxide film between last Pt electrode and following Pt electrode, PtO
xBoundary layer is between Dyadic transition group metallic oxide film and following Pt electrode.
2. the non-volatile resistor change type memory that has self-rectification effect according to claim 1 is characterized in that, the described method that goes up Pt electrode and the employing of following Pt electrode electron beam evaporation, magnetron sputtering or ald is made.
3. the non-volatile resistor change type memory that has self-rectification effect according to claim 1 is characterized in that, the material that described Dyadic transition group metallic oxide film adopts is ZrO
2, NiO, TiO
2, CuO
x, ZnO, HfO
2And TaO
xIn a kind of.
4. the non-volatile resistor change type memory that has self-rectification effect according to claim 1 is characterized in that, the thickness of described Dyadic transition group metallic oxide film is 20～200nm.
5. the non-volatile resistor change type memory that has self-rectification effect according to claim 1, it is characterized in that described Dyadic transition group metallic oxide film adopts the method for electron beam evaporation, magnetron sputtering, sol-gel process or ald to be made.
6. the non-volatile resistor change type memory that has self-rectification effect according to claim 1 is characterized in that, described PtO
xThe thickness of boundary layer is 1～10nm.
7. the non-volatile resistor change type memory that has self-rectification effect according to claim 1 is characterized in that, described PtO
xBoundary layer adopts hot oxygen oxidation or plasma oxidation method to be made.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853874A (en) * | 2010-04-28 | 2010-10-06 | 北京大学 | Crossed nano-scale storage structure circuit and solution of crosstalk problem thereof |
| CN102867912A (en) * | 2011-07-08 | 2013-01-09 | 财团法人工业技术研究院 | Resistive memory with diode rectification capability |
| CN103137861A (en) * | 2011-12-01 | 2013-06-05 | 北京大学 | Storage device and storage array and manufacturing method thereof |
| CN103579500A (en) * | 2012-08-10 | 2014-02-12 | 三星电子株式会社 | Resistance switching material element and device employing the same |
| CN105870321A (en) * | 2016-03-28 | 2016-08-17 | 北京大学 | Nonlinear self-rectifying resistive random access memory and preparation method therefor |
| WO2019183828A1 (en) * | 2018-03-28 | 2019-10-03 | 中国科学院微电子研究所 | Self-rectifying resistive memory and preparation method therefor |
| CN113206194A (en) * | 2021-04-30 | 2021-08-03 | 华中科技大学 | Self-rectifying memristor, preparation method and application thereof |
| RU2791082C1 (en) * | 2022-03-29 | 2023-03-02 | Открытое акционерное общество "Авангард" | Method for producing thin-film platinum thermistors on a dielectric substrate and a thermistor device (options) |
-
2009
- 2009-01-21 CN CN200910077518A patent/CN101783388A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853874A (en) * | 2010-04-28 | 2010-10-06 | 北京大学 | Crossed nano-scale storage structure circuit and solution of crosstalk problem thereof |
| CN102867912A (en) * | 2011-07-08 | 2013-01-09 | 财团法人工业技术研究院 | Resistive memory with diode rectification capability |
| CN103137861A (en) * | 2011-12-01 | 2013-06-05 | 北京大学 | Storage device and storage array and manufacturing method thereof |
| CN103579500A (en) * | 2012-08-10 | 2014-02-12 | 三星电子株式会社 | Resistance switching material element and device employing the same |
| CN103579500B (en) * | 2012-08-10 | 2017-10-13 | 三星电子株式会社 | Resistance switch material elements and the device using the resistance switch material elements |
| CN105870321A (en) * | 2016-03-28 | 2016-08-17 | 北京大学 | Nonlinear self-rectifying resistive random access memory and preparation method therefor |
| CN105870321B (en) * | 2016-03-28 | 2019-03-08 | 北京大学 | A kind of non-linear self-rectifying resistance-variable storing device and preparation method thereof |
| WO2019183828A1 (en) * | 2018-03-28 | 2019-10-03 | 中国科学院微电子研究所 | Self-rectifying resistive memory and preparation method therefor |
| US11641787B2 (en) | 2018-03-28 | 2023-05-02 | Institute of Microelectronics, Chinese Academy of Sciences | Self-rectifying resistive memory and fabrication method thereof |
| CN113206194A (en) * | 2021-04-30 | 2021-08-03 | 华中科技大学 | Self-rectifying memristor, preparation method and application thereof |
| CN113206194B (en) * | 2021-04-30 | 2023-07-04 | 华中科技大学 | Self-rectifying memristor, preparation method and application thereof |
| RU2791082C1 (en) * | 2022-03-29 | 2023-03-02 | Открытое акционерное общество "Авангард" | Method for producing thin-film platinum thermistors on a dielectric substrate and a thermistor device (options) |
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Application publication date: 20100721 |