CN101577311A - One-time programming memory and manufacturing method thereof - Google Patents
One-time programming memory and manufacturing method thereof Download PDFInfo
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- CN101577311A CN101577311A CNA2009103030690A CN200910303069A CN101577311A CN 101577311 A CN101577311 A CN 101577311A CN A2009103030690 A CNA2009103030690 A CN A2009103030690A CN 200910303069 A CN200910303069 A CN 200910303069A CN 101577311 A CN101577311 A CN 101577311A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000002346 layers by function Substances 0.000 claims abstract description 52
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- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 238000005566 electron beam evaporation Methods 0.000 claims description 11
- 238000000231 atomic layer deposition Methods 0.000 claims description 10
- 238000004549 pulsed laser deposition Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- -1 HfOx Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910017107 AlOx Inorganic materials 0.000 claims 4
- 229910016553 CuOx Inorganic materials 0.000 claims 4
- 229910015711 MoOx Inorganic materials 0.000 claims 4
- 229910002370 SrTiO3 Inorganic materials 0.000 claims 4
- 229910003070 TaOx Inorganic materials 0.000 claims 4
- 229910003087 TiOx Inorganic materials 0.000 claims 4
- 229910003134 ZrOx Inorganic materials 0.000 claims 4
- 229910002113 barium titanate Inorganic materials 0.000 claims 4
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims 4
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims 4
- 229910002244 LaAlO3 Inorganic materials 0.000 claims 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a one-time programming memory and a manufacturing method thereof, belonging to the technical field of microelectronics. The one-time programming memory comprises a lower electrode, an upper electrode and a functional layer film positioned between the upper electrode and the lower electrode; the upper electrode or the lower electrode is in contact with the functional layer film to form a rectification characteristic. The manufacturing method of the one-time programming memory comprises the following steps: forming a substrate as a lower electrode; forming a functional layer film on a substrate; photoetching and depositing a conductive material on the functional layer film, and forming an upper electrode after stripping; the upper electrode or the lower electrode is in contact with the functional layer film to form a rectification characteristic. The invention reduces the manufacturing cost of the memory and is beneficial to the integration and the use of the memory; the memory device can be integrated by adopting a cross array structure, so that the memory density is improved; the memory has a rectifying function, an additional rectifying device is not needed, the influence of the additional rectifying device on the memory is eliminated, and the reading crosstalk is restrained.
Description
Technical field
The present invention relates to microelectronics technology, relate in particular to a kind of one-time programming memory and manufacture method thereof.
Background technology
Memory occupies important effect at microelectronics technology.Memory generally can be divided into volatility and non-volatility memorizer.Volatile storage is meant that the information of memory must could keep when powering up, canned data is lost during power down; And non-volatility memorizer, its main feature is also to keep canned data under situation about not powering up for a long time, the characteristics of its existing ROM have very high access speed again.Along with the needs to big capacity, low-power consumption storage such as multimedia application, mobile communication, the market share of the shared semiconductor device of non-volatility memorizer becomes increasing, also more and more becomes a kind of considerable type of memory.
The one-time programming memory is a kind of very important non-volatility memorizer, because it is simple in structure, characteristics low in energy consumption are widely used in code storage, calibration chart, parameter etc. is set in case the field that the programming back generally need not change.The one-time programming memory generally all is based on transistorized structure at present, and cell size can be accomplished and a same size of transistor.
An important feature of one-time programming memory needs with low cost exactly, and performance is good.Utilize the memory cell of resistive material preparation to can be good at satisfying this application characteristic of one-time programming memory.As the strong competitor of nonvolatile memory of future generation, resistance-variable storing device is owing to possess that operating voltage is low, simple in structure, non-destructive reads, service speed is fast, memory time is long, device area is little, endurance is good, can carry out characteristics such as three-dimensional stacked and be subjected to extensively and profoundly research.As shown in Figure 1, under the biased outside effect, the storage of realization " 0 " and " 1 " thereby the resistance of device can change between high low resistance state.
Cross array structure is considered to be hopeful to be used for the integrated of resistance-variable storing device, but runs into the serious cross-interference issue of reading at present.As shown in Figure 2, four adjacent devices, if A1 is a high-impedance state and other three memory cell are low resistance state, when reading the resistance state of A1, the current path of wishing is shown in solid line among Fig. 2, but actual current path as shown in phantom in Figure 2, makes that the resistance value that reads out is not the true resistance value of A1, promptly reads crosstalk phenomenon.This shows, employing has as shown in Figure 1, and the Integrated Solution based on the 1R structure of electrology characteristic has the serious cross-interference issue of reading, if avoid reading to crosstalk by well-designed peripheral circuit, will certainly increase the complexity and the cost of design, this can make the integrated of 1R structure of symmetrical conversion characteristic shown in Figure 1 be restricted.
Summary of the invention
In order to adopt intersection permutation structure to improve the density of one-time programming memory, solve the cross-interference issue of reading of one-time programming memory, the invention provides a kind of one-time programming memory, comprise bottom electrode, top electrode and the functional layer film between described top electrode and bottom electrode; Contact between described top electrode or bottom electrode and the functional layer film and form rectification characteristic.
Described top electrode or bottom electrode adopt Pt, Ag, Pd, W, Ti, Al, Cu, TiN, ITO, IZO, YBCO, LaAlO
3, SrRuO
3With any material in the polysilicon.
Described functional layer film adopts NiO, TiO
x, CuO
x, ZrO
x, TaO
x, AlO
x, CoO, HfO
x, MoO
x, ZnO, PCMO, LCMO, SrTiO
3, BaTiO
3, any material in SrZrO and the amorphous silicon.
Described functional layer film adopts NiO, TiO
x, CuO
x, ZrO
x, TaO
x, AlO
x, CoO, HfO
x, MoO
x, ZnO, PCMO, LCMO, SrTiO
3, BaTiO
3, the material of any material in SrZrO and the amorphous silicon through forming behind doping vario-property.
The thickness of described functional layer film is 10nm to 200nm.
The present invention also provides a kind of manufacture method of one-time programming memory, comprising:
Step 1: form substrate as bottom electrode;
Step 2: on described substrate, form functional layer film;
Step 3: on described functional layer film, carry out photoetching and depositing conductive material, peel off the back and form top electrode;
Wherein, contact between described top electrode or bottom electrode and the functional layer film and form rectification characteristic.
Described top electrode or bottom electrode adopt Pt, Ag, Pd, W, Ti, Al, Cu, TiN, ITO, IZO, YBCO, LaAlO
3, SrRuO
3With any material in the polysilicon.
Described functional layer film adopts NiO, TiO
x, CuO
x, ZrO
x, TaO
x, AlO
x, CoO, HfO
x, MoO
x, ZnO, PCMO, LCMO, SrTiO
3, BaTiO
3, any material in SrZrO and the amorphous silicon.
Described functional layer film adopts NiO, TiO
x, CuO
x, ZrO
x, TaO
x, AlO
x, CoO, HfO
x, MoO
x, ZnO, PCMO, LCMO, SrTiO
3, BaTiO
3, the material of any material in SrZrO and the amorphous silicon through forming behind doping vario-property.
The thickness of described functional layer film is 10nm to 200nm.
Described step 1 is specially: by chemical vapor deposition method, sputtering technology, atomic layer deposition technology, thermal evaporation technology, pulsed laser deposition technology or the electron beam evaporation process formation substrate as bottom electrode.
Described step 2 is specially: form functional layer film by sputtering technology, atomic layer deposition technology, spin coating proceeding, pulsed laser deposition technology, low pressure/plasma enhanced CVD technology or electron beam evaporation process on described substrate.
Described step 3 specifically comprises:
Step 31: on described functional layer film, carry out photoetching;
Step 32: on described functional layer film,, peel off the back and form top electrode by chemical vapor deposition method, sputtering technology, atomic layer deposition technology, thermal evaporation technology, pulsed laser deposition technology or electron beam evaporation process depositing conductive material.
Beneficial effect: the preparation method of one-time programming memory of the present invention is simple, has reduced the cost of manufacture of memory, helps the integrated of memory and use; The one-time programming memory adopts cross array structure integrated, has improved the density of memory; One-time programming memory of the present invention itself has rectified action, does not need to add rectifying device, can eliminate like this to add the influence of rectifying device to memory; The present invention utilizes the rectification characteristic of one-time programming memory itself, can suppress the crosstalk phenomenon of reading in the cross array structure effectively, is convenient to the integrated of memory and peripheral circuit, has simplified device preparing process, has reduced cost.
Description of drawings
The electrology characteristic curve synoptic diagram of resistance-change memory device when Fig. 1 is the prior art low resistance state;
Fig. 2 is the current channel schematic diagram that prior art electric resistance changing storage component part is read to crosstalk;
Fig. 3 is the Pt/ZrO of the embodiment of the invention 1
2/ n
+The structural representation of Si one-time programming storage component part;
Fig. 4 is the Pt/ZrO of the embodiment of the invention 1
2/ n
+The current-voltage characteristic curve schematic diagram of Si one-time programming storage component part;
Fig. 5 is the manufacture method flow chart of the one-time programming memory that provides of the embodiment of the invention 2.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
Embodiment 1
Referring to Fig. 3, the embodiment of the invention has proposed a kind ofly can adopt the integrated one-time programming storage component part that has rectified action of cross array structure itself, and this one-time programming memory comprises:
Contact between top electrode 303 or bottom electrode 301 and the functional layer film 302 and form rectification characteristic.
In actual applications, when the one-time programming memory device that provides when present embodiment is in low resistive state, this one-time programming memory device has rectified action, makes it become high-impedance state by it being applied a program voltage, and this one-time programming memory device remains on high-impedance state always then; When this one-time programming memory device is in high-impedance state, have rectified action by it is applied after a program voltage makes it become low resistance state, and this one-time programming memory device remains on low resistive state always afterwards.
In concrete production practices, as bottom electrode, utilize the thick ZrO of electron beam evaporation process deposit 20nm with heavily doped n type silicon substrate
2As functional layer film, on functional layer film, carry out photoetching, and the thick Pt of deposited by electron beam evaporation technology deposit one deck 50nm, obtain the top electrode of this one-time programming memory device after peeling off.In addition, top electrode, bottom electrode and functional layer film can also form with technologies such as sputter, atomic layer deposition, spin coating, pulsed laser deposition, low pressure/plasma enhanced CVDs.
In actual applications, functional layer film adopts electric resistance changing material commonly used at present.
Fig. 4 is that present embodiment adopts Pt/ZrO
2/ n
+The programming characteristic curve synoptic diagram of the voltage-to-current that the one-time programming memory of Si material obtains under the test of direct current scan pattern.As seen from Figure 4, this one-time programming memory device is initially located in high-impedance state (" 0 "), when applying bias reach-during 12.8V, this one-time programming memory device is transformed into low resistive state (" 1 ") from high-impedance state, thereby realize one-time programming; After this, this one-time programming memory device remains on low resistive state.Use 0.8V read voltage the time, the high low resistance state of this one-time programming memory device is than up to 2.3? 0
5Reading under the voltage of ± 0.8V, forward current and negative current ratio are about 10
4, can suppress reading in the cross array structure so effectively and crosstalk, avoid misreading generation.
Referring to Fig. 5, the embodiment of the invention also provides a kind of manufacture method of one-time programming memory, may further comprise the steps:
Step 501: form substrate as bottom electrode;
In concrete production practices, can pass through chemical vapor deposition method, sputtering technology, atomic layer deposition technology, thermal evaporation technology, pulsed laser deposition technology or electron beam evaporation process formation substrate as bottom electrode;
Step 502: on substrate, form functional layer film;
In concrete production practices, can on substrate, pass through sputtering technology, atomic layer deposition technology, spin coating proceeding, pulsed laser deposition technology, low pressure/plasma enhanced CVD technology or electron beam evaporation process and form functional layer film;
Step 503: on functional layer film, carry out photoetching and depositing conductive material, peel off the back and form top electrode;
In concrete production practices, on functional layer film, carry out photoetching, and on functional layer film, pass through chemical vapor deposition method, sputtering technology, atomic layer deposition technology, thermal evaporation technology, pulsed laser deposition technology or electron beam evaporation process depositing conductive material, peel off the back and form top electrode.
Wherein, contact between top electrode or bottom electrode and the functional layer film and form rectification characteristic.
In actual applications, top electrode or bottom electrode can adopt Pt, Ag, Pd, W, Ti, Al, Cu, TiN, ITO, IZO, YBCO, LaAlO
3, SrRuO
3With any material in the polysilicon; Functional layer film can adopt NiO, TiO
x, CuO
x, ZrO
x, TaO
x, AlO
x, CoO, HfO
x, MoO
x, ZnO, PCMO, LCMO, SrTiO
3, BaTiO
3, any material in SrZrO and the amorphous silicon; Functional layer film can also adopt NiO, TiO
x, CuO
x, ZrO
x, TaO
x, AlO
x, CoO, HfO
x, MoO
x, ZnO, PCMO, LCMO, SrTiO
3, BaTiO
3, the material of any material in SrZrO and the amorphous silicon through forming behind doping vario-property; The thickness of functional layer film is 10nm to 200nm.
The preparation method of the one-time programming memory of the embodiment of the invention is simple, has reduced the cost of manufacture of memory, helps the integrated of memory and use; The one-time programming memory adopts cross array structure integrated, has improved the density of memory; One-time programming memory of the present invention itself has rectified action, does not need to add rectifying device, can eliminate like this to add the influence of rectifying device to memory; The present invention utilizes the rectification characteristic of one-time programming memory itself, can suppress the crosstalk phenomenon of reading in the cross array structure effectively, is convenient to the integrated of memory and peripheral circuit, has simplified device preparing process, has reduced cost.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (13)
1. the one-time programming memory is characterized in that, comprises bottom electrode, top electrode and the functional layer film between described top electrode and bottom electrode; Contact between described top electrode or bottom electrode and the functional layer film and form rectification characteristic.
2. one-time programming memory as claimed in claim 1 is characterized in that, described top electrode or bottom electrode adopt any material in Pt, Ag, Pd, W, Ti, Al, Cu, TiN, ITO, IZO, YBCO, LaAlO3, SrRuO3 and the polysilicon.
3. one-time programming memory as claimed in claim 1, it is characterized in that described functional layer film adopts any material in NiO, TiOx, CuOx, ZrOx, TaOx, AlOx, CoO, HfOx, MoOx, ZnO, PCMO, LCMO, SrTiO3, BaTiO3, SrZrO and the amorphous silicon.
4. one-time programming memory as claimed in claim 1, it is characterized in that described functional layer film adopts the material of any material through forming behind the doping vario-property in NiO, TiOx, CuOx, ZrOx, TaOx, AlOx, CoO, HfOx, MoOx, ZnO, PCMO, LCMO, SrTiO3, BaTiO3, SrZrO and the amorphous silicon.
5. one-time programming memory as claimed in claim 1 is characterized in that, the thickness of described functional layer film is 10nm to 200nm.
6. the manufacture method of one-time programming memory is characterized in that, described method comprises:
Step 1: form substrate as bottom electrode;
Step 2: on described substrate, form functional layer film;
Step 3: on described functional layer film, carry out photoetching and depositing conductive material, peel off the back and form top electrode;
Wherein, contact between described top electrode or bottom electrode and the functional layer film and form rectification characteristic.
7.
The manufacture method of one-time programming memory as claimed in claim 6, it is characterized in that described top electrode or bottom electrode adopt any material in Pt, Ag, Pd, W, Ti, Al, Cu, TiN, ITO, IZO, YBCO, LaAlO3, SrRuO3 and the polysilicon.
8. the manufacture method of one-time programming memory as claimed in claim 6, it is characterized in that described functional layer film adopts any material in NiO, TiOx, CuOx, ZrOx, TaOx, AlOx, CoO, HfOx, MoOx, ZnO, PCMO, LCMO, SrTiO3, BaTiO3, SrZrO and the amorphous silicon.
9. the manufacture method of one-time programming memory as claimed in claim 6, it is characterized in that described functional layer film adopts the material of any material through forming behind the doping vario-property in NiO, TiOx, CuOx, ZrOx, TaOx, AlOx, CoO, HfOx, MoOx, ZnO, PCMO, LCMO, SrTiO3, BaTiO3, SrZrO and the amorphous silicon.
10. the manufacture method of one-time programming memory as claimed in claim 6 is characterized in that, the thickness of described functional layer film is 10nm to 200nm.
11. the manufacture method of one-time programming memory as claimed in claim 6, it is characterized in that described step 1 is specially: by chemical vapor deposition method, sputtering technology, atomic layer deposition technology, thermal evaporation technology, pulsed laser deposition technology or electron beam evaporation process formation substrate as bottom electrode.
12. the manufacture method of one-time programming memory as claimed in claim 6, it is characterized in that described step 2 is specially: on described substrate, form functional layer film by sputtering technology, atomic layer deposition technology, spin coating proceeding, pulsed laser deposition technology, low pressure/plasma enhanced CVD technology or electron beam evaporation process.
13. the manufacture method of one-time programming memory as claimed in claim 6 is characterized in that, described step 3 specifically comprises:
Step 31: on described functional layer film, carry out photoetching;
Step 32: on described functional layer film,, peel off the back and form top electrode by chemical vapor deposition method, sputtering technology, atomic layer deposition technology, thermal evaporation technology, pulsed laser deposition technology or electron beam evaporation process depositing conductive material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009103030690A CN101577311A (en) | 2009-06-09 | 2009-06-09 | One-time programming memory and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009103030690A CN101577311A (en) | 2009-06-09 | 2009-06-09 | One-time programming memory and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101577311A true CN101577311A (en) | 2009-11-11 |
Family
ID=41272159
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| CNA2009103030690A Pending CN101577311A (en) | 2009-06-09 | 2009-06-09 | One-time programming memory and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853874A (en) * | 2010-04-28 | 2010-10-06 | 北京大学 | Crossed nano-scale storage structure circuit and solution of crosstalk problem thereof |
| CN106328808A (en) * | 2015-06-15 | 2017-01-11 | 华邦电子股份有限公司 | One-time programmable resistive memory |
| CN106654008A (en) * | 2016-12-08 | 2017-05-10 | 南京理工大学 | Flexible high-temperature resistant BaTi<1-x>Co<x>O3 resistive random access memory |
| CN107331710A (en) * | 2017-06-30 | 2017-11-07 | 广东工业大学 | A kind of commutation diode thin-film device and preparation method thereof |
| CN107342229A (en) * | 2017-07-20 | 2017-11-10 | 广东工业大学 | A kind of noncrystal membrane device and preparation method |
-
2009
- 2009-06-09 CN CNA2009103030690A patent/CN101577311A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853874A (en) * | 2010-04-28 | 2010-10-06 | 北京大学 | Crossed nano-scale storage structure circuit and solution of crosstalk problem thereof |
| CN106328808A (en) * | 2015-06-15 | 2017-01-11 | 华邦电子股份有限公司 | One-time programmable resistive memory |
| CN106328808B (en) * | 2015-06-15 | 2018-11-13 | 华邦电子股份有限公司 | One time programming resistance-type memory |
| CN106654008A (en) * | 2016-12-08 | 2017-05-10 | 南京理工大学 | Flexible high-temperature resistant BaTi<1-x>Co<x>O3 resistive random access memory |
| CN106654008B (en) * | 2016-12-08 | 2019-04-16 | 南京理工大学 | A kind of flexible high-temperature resistant BaTi1-xCoxO3Resistance-variable storing device |
| CN107331710A (en) * | 2017-06-30 | 2017-11-07 | 广东工业大学 | A kind of commutation diode thin-film device and preparation method thereof |
| CN107342229A (en) * | 2017-07-20 | 2017-11-10 | 广东工业大学 | A kind of noncrystal membrane device and preparation method |
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