CN107342229A - A kind of noncrystal membrane device and preparation method - Google Patents
A kind of noncrystal membrane device and preparation method Download PDFInfo
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- CN107342229A CN107342229A CN201710595501.2A CN201710595501A CN107342229A CN 107342229 A CN107342229 A CN 107342229A CN 201710595501 A CN201710595501 A CN 201710595501A CN 107342229 A CN107342229 A CN 107342229A
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- 239000012528 membrane Substances 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000007788 liquid Substances 0.000 claims description 54
- 239000002243 precursor Substances 0.000 claims description 50
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 32
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 20
- PHFQLYPOURZARY-UHFFFAOYSA-N chromium trinitrate Chemical compound [Cr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PHFQLYPOURZARY-UHFFFAOYSA-N 0.000 claims description 16
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 5
- 229910002328 LaMnO3 Inorganic materials 0.000 claims description 4
- 229910002340 LaNiO3 Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910003387 SrMnO3 Inorganic materials 0.000 claims description 4
- 229910002353 SrRuO3 Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910002651 NO3 Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910002554 Fe(NO3)3·9H2O Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XWNOTOKFKBDMAP-UHFFFAOYSA-N [Bi].[N+](=O)(O)[O-] Chemical compound [Bi].[N+](=O)(O)[O-] XWNOTOKFKBDMAP-UHFFFAOYSA-N 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007791 dehumidification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/247—Amorphous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a kind of noncrystal membrane device and preparation method, the preparation method includes：One substrate is provided；First electrode structure is formed on the substrate；In the first electrode structure noncrystal membrane layer is formed away from the side of the substrate；In the noncrystal membrane layer second electrode structure is formed away from the side of the first electrode structure；Wherein, the first electrode structure contacts with each other with the second electrode structure and is connected.The preparation method technique is simple, and the noncrystal membrane device unilateral conduction being made by the preparation method, has an obvious diode effect, and rectification effect is good.
Description
Technical field
The present invention relates to function film and technical field of electronic devices, and more specifically, more particularly to a kind of amorphous is thin
Membrane module and preparation method.
Background technology
With the continuous development of scientific technology, thin-film material has received more and more attention in electronic applications, film
Manufacturing technology is also being constantly updated and developed.The preparation method of existing thin-film material has with chemical field corresponding in physics
Technology, such as pulsed laser deposition, physical vaporous deposition, chemical vapour deposition technique, atomic deposition technique and chemical solution
Liquid sedimentation etc..
In the prior art, there is unilateral conduction for commutation diode, for being direct current by AC conversion, by
It is widely used in multiple fields, such as automotive field, field of solar energy and household appliance technical field；That is, almost institute
The electronic unit for having charged can use commutation diode, and diode occupies indispensable status in every field.
And commutation diode of the prior art belongs to metal-oxide semiconductor (MOS), then how to provide one kind has two poles
The noncrystal membrane device of tube effect, it is those skilled in the art's urgent problem to be solved.
The content of the invention
To solve the above problems, the invention provides a kind of noncrystal membrane device and preparation method, by the preparation method
The noncrystal membrane device being made has obvious diode effect, and manufacture craft is simple, excellent diode rectification effect
There should be particularly important status in the fields such as electronic device.
To achieve the above object, the present invention provides following technical scheme：
A kind of preparation method of noncrystal membrane device, the preparation method include：
One substrate is provided；
First electrode structure is formed on the substrate；
In the first electrode structure noncrystal membrane layer is formed away from the side of the substrate；
In the noncrystal membrane layer second electrode structure is formed away from the side of the first electrode structure；
Wherein, the first electrode structure contacts with each other with the second electrode structure and is connected.
Preferably, in above-mentioned preparation method, the substrate is substrate of glass or silicon chip substrate or single-crystal strontium titanate substrate
Or single-crystal strontium titanate mixes niobium substrate.
Preferably, in above-mentioned preparation method, the first electrode structure is platinum electrode or LaNiO3 electrodes or SrRuO3
Electrode or LaMnO3 electrodes or SrMnO3 electrodes.
Preferably, in above-mentioned preparation method, the second electrode structure is gold electrode or platinum electrode or tungsten electrode or silver
Electrode or aluminium electrode.
Preferably, in above-mentioned preparation method, the noncrystal membrane layer is Bi2FeCrO6Noncrystal membrane layer.
Preferably, it is described to be formed in the first electrode structure away from the side of the substrate in above-mentioned preparation method
Noncrystal membrane layer includes：
Configure ferric nitrate precursor liquid and chromic nitrate precursor liquid and bismuth nitrate precursor liquid；
When the ferric nitrate precursor liquid and the chromic nitrate precursor liquid and the bismuth nitrate precursor liquid are stood into setting
Between；
The ferric nitrate precursor liquid is added dropwise in the bismuth nitrate precursor liquid, at the uniform velocity stirs setting time, forms first
Mixed liquor；
The chromic nitrate precursor liquid is added dropwise in first mixed liquor, at the uniform velocity stirs setting time, it is mixed to form second
Close liquid；
The concentration of second mixed liquor is adjusted using acetylacetone,2,4-pentanedione solution, so that the concentration of second mixed liquor reaches
Sets requirement, form Bi2FeCrO6Precursor liquid；
Using the Bi2FeCrO6Precursor liquid forms setting thickness in the first electrode structure away from the side of the substrate
The noncrystal membrane layer of degree.
Preferably, it is described to deviate from the one of the first electrode structure in the noncrystal membrane layer in above-mentioned preparation method
Side, which forms second electrode structure, to be included：
Film layer removal is carried out to the setting position of the noncrystal membrane layer, to expose the first electrode structure；
In the noncrystal membrane layer second electrode structure, and described first are formed away from the side of the first electrode structure
Electrode structure contacts with each other with the second electrode structure and is connected.
Present invention also offers a kind of noncrystal membrane device, the noncrystal membrane device includes：
Substrate；
First electrode structure on the substrate is set；
It is arranged on noncrystal membrane layer of the first electrode structure away from the side of the substrate；
It is arranged on second electrode structure of the noncrystal membrane layer away from the side of the first electrode structure；
Wherein, the first electrode structure contacts with each other with the second electrode structure and is connected.
Preferably, in above-mentioned noncrystal membrane device, the noncrystal membrane layer is Bi2FeCrO6Noncrystal membrane layer.
By foregoing description, the invention provides a kind of noncrystal membrane device and preparation method, by the making side
The noncrystal membrane device that method is made has obvious diode effect, and manufacture craft is simple, excellent diode rectification
Effect has particularly important status in the fields such as electronic device.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of schematic flow sheet of the preparation method of noncrystal membrane device provided in an embodiment of the present invention；
Fig. 2 is a kind of schematic flow sheet of noncrystal membrane layer preparation method provided in an embodiment of the present invention；
Fig. 3 is a kind of Current Voltage figure of noncrystal membrane device provided in an embodiment of the present invention；
Fig. 4 is a kind of basic structure schematic diagram of noncrystal membrane device provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is further detailed explanation.
With reference to figure 1, Fig. 1 is that a kind of flow of preparation method of noncrystal membrane device provided in an embodiment of the present invention is illustrated
Figure.
The preparation method includes：
S101：One substrate is provided.
Specifically, the substrate includes but is not limited to substrate of glass or silicon chip substrate or single-crystal strontium titanate substrate or monocrystalline
Strontium titanates mixes niobium substrate or Pt/Ti/SiO2The silicon chip substrate of/Si (100) gold,platinized hearth electrode.
S102：First electrode structure is formed on the substrate.
Specifically, the first electrode structure includes but is not limited to platinum electrode or LaNiO3Electrode or SrRuO3Electrode or
LaMnO3Electrode or SrMnO3The tin oxide film electrode of electrode or indium doped tin oxide membrane electrode or fluorine doped；Specially：Prepare
LaNiO3Solution or SrRuO3Solution or LaMnO3Solution or SrMnO3Solution etc., used solution is spin-coated to the substrate
On, drying glue is carried out using appropriate temperature, forms required first electrode structure.
S103：In the first electrode structure noncrystal membrane layer is formed away from the side of the substrate.
Specifically, the noncrystal membrane layer includes but is not limited to Bi2FeCrO6Noncrystal membrane layer.
S104：In the noncrystal membrane layer second electrode structure is formed away from the side of the first electrode structure.
Specifically, the second electrode structure include but is not limited to gold electrode or platinum electrode or tungsten electrode or silver electrode or
Aluminium electrode.
It is connected it should be noted that the first electrode structure contacts with each other with the second electrode structure.
The noncrystal membrane device being made by the preparation method has obvious diode effect, and manufacture craft letter
Single, excellent diode rectification effect has particularly important status in the fields such as electronic device.
Based on the above embodiment of the present invention, in an alternative embodiment of the invention, Fig. 2 is refer to, Fig. 2 is the embodiment of the present invention
A kind of schematic flow sheet of the noncrystal membrane layer preparation method provided；It is described to deviate from the substrate in the first electrode structure
Side, which forms noncrystal membrane layer, to be included：
S201：Configure ferric nitrate precursor liquid and chromic nitrate precursor liquid and bismuth nitrate precursor liquid.
Specifically, configuration ferric nitrate precursor liquid is specially：Use nine water ferric nitrate Fe (NO3)3·9H2O (98.5%) conduct
Raw material, deionized water is as solvent；According to stoichiometric proportion by nine water ferric nitrate Fe (NO3)3·9H2O (98.5%) be dissolved in from
In sub- water, and stir 2 hours at normal temperatures so that fully dissolving, and then form ferric nitrate precursor liquid；
Configuring chromic nitrate precursor liquid is specially：Use nine water chromic nitrate Cr (NO3)3·9H2O (99%) is used as raw material, go from
Sub- water is as solvent；According to stoichiometric proportion by nine water chromic nitrate Cr (NO3)3·9H2O (99%) is dissolved in deionized water, and
Stir 2 hours at normal temperatures so that fully dissolving, and then form chromic nitrate precursor liquid；
Configuring bismuth nitrate precursor liquid is specially：Use five water bismuth nitrate Bi (NO3)3·5H2O (99%) is used as raw material, ice vinegar
Acid is used as solvent；According to stoichiometric proportion by five water bismuth nitrate Bi (NO3)3·5H2O (99%) is dissolved in glacial acetic acid, 50 DEG C of heating
Stir 5 hours so that fully dissolving, is then added dropwise appropriate acetylacetone,2,4-pentanedione stabilizer, is again stirring for 50 minutes, in order to reduce
Volatilization loss of the Bi elements in annealing process, using excessive 5% Bi elements, ultimately form bismuth nitrate precursor liquid.
S202：The ferric nitrate precursor liquid and the chromic nitrate precursor liquid and the bismuth nitrate precursor liquid are stood and set
Fix time.
Specifically, the ferric nitrate precursor liquid and the chromic nitrate precursor liquid and the bismuth nitrate precursor liquid are distinguished
2-3 days are stood, if produced without precipitation, the ferric nitrate precursor liquid and the chromic nitrate precursor liquid and the nitric acid
Bismuth precursor liquid can use；If have precipitation generation, solution is prepared again.
S203：The ferric nitrate precursor liquid is added dropwise in the bismuth nitrate precursor liquid, at the uniform velocity stirs setting time, is formed
First mixed liquor.
Specifically, the ferric nitrate precursor liquid is added dropwise in the bismuth nitrate precursor liquid, 5 hours, shape are at the uniform velocity stirred
Into the first mixed liquor.
S204：The chromic nitrate precursor liquid is added dropwise in first mixed liquor, at the uniform velocity stirs setting time, forms the
Two mixed liquors.
Specifically, the chromic nitrate precursor liquid is added dropwise in first mixed liquor, 5 hours are at the uniform velocity stirred, are formed
Second mixed liquor.
S205：The concentration of second mixed liquor is adjusted using acetylacetone,2,4-pentanedione solution, so that second mixed liquor is dense
Degree reaches sets requirement, forms Bi2FeCrO6Precursor liquid.
If specifically, when second mixed liquor does not precipitate generation, mixed using acetylacetone,2,4-pentanedione solution regulation described second
The concentration of liquid is closed, so that the concentration of second mixed liquor reaches 0.25mol/L；And filtered using filter paper, to subtract
Few dust in air pollution, and then form Bi2FeCrO6Precursor liquid.
S206：Using the Bi2FeCrO6Precursor liquid is formed away from the side of the substrate in the first electrode structure and set
Determine the noncrystal membrane layer of thickness.
Specifically, by the Bi2FeCrO6Precursor liquid is added dropwise to the side that the first electrode structure deviates from the substrate,
With 800r/min speed spin coating 10 seconds on sol evenning machine, then kept for 20 seconds with 2800r/min speed rotation, often coat one
Wet film is dried into 10min on warm table with 180 DEG C of temperature after layer, to remove the moisture in based Dehumidification Membranes, with 300 DEG C of temperature roasting glue
10min, so that the organic matter in film layer decomposes, so repeat 2 to 3 times, form the noncrystal membrane layer of setting thickness.
It is in an alternative embodiment of the invention, described to deviate from institute in the noncrystal membrane layer based on the above embodiment of the present invention
Stating the side formation second electrode structure of first electrode structure includes：
Film layer removal is carried out to the setting position of the noncrystal membrane layer, to expose the first electrode structure；
In the noncrystal membrane layer second electrode structure, and described first are formed away from the side of the first electrode structure
Electrode structure contacts with each other with the second electrode structure and is connected.
Specifically, film layer removal is carried out to the setting position of the noncrystal membrane layer using the hydrofluoric acid of dilution, with exposure
Go out the first electrode structure；And with 400 DEG C and 450 DEG C of temperature in quick anneal oven, anneal 10min respectively；Using
Masterplate encapsulation method, the second electrode structure to form a diameter of 0.25mm is sputtered using electron beam evaporation；
It should be noted that the concrete shape of the second electrode structure and being not construed as limiting, the second electrode structure
Can be with film layer structure.
With reference to figure 3, Fig. 3 is a kind of Current Voltage figure of noncrystal membrane device provided in an embodiment of the present invention；Testing
Voltage first increases to full test voltage from 0V in journey, then is decreased to maximum negative voltage, finally returns and measures 0V.
As shown in figure 3, the noncrystal membrane device made by the preparation method, when annealing for 400 DEG C, voltage increases from 0V
It is decreased to 0V during this to 2V, then from 2V, hysteretic phenomenon does not almost occur in curve, but is decreased to -2V again again from 0V
For the secondary 0V that returns to during this, there is obvious hysteretic phenomenon in curve.Equally, when annealing for 450 DEG C, voltage reduces from 0V
0V is returned to once more during this to -3V, and obvious hysteretic phenomenon equally occurs in curve.Also, in all test voltages
All there is asymmetry in lower electric current, and negative sense maximum current is more than forward current.Therefore, from the figure 3, it may be seen that the noncrystal membrane device
Part unilateral conduction, has an obvious diode effect, and rectification effect is good.
Present invention also offers a kind of noncrystal membrane device, and with reference to figure 4, Fig. 4 is that one kind provided in an embodiment of the present invention is non-
The basic structure schematic diagram of brilliant thin-film device, the noncrystal membrane device include：
Substrate 41；
The first electrode structure 42 being arranged in the substrate 41；
It is arranged on noncrystal membrane layer 43 of the first electrode structure 42 away from the side of the substrate 41；
It is arranged on second electrode structure 44 of the noncrystal membrane layer 43 away from the side of the first electrode structure 42；
Wherein, the first electrode structure 42 contacts with each other with the second electrode structure 44 and is connected.
Specifically, the noncrystal membrane layer is Bi2FeCrO6Noncrystal membrane layer.
The noncrystal membrane device has obvious diode effect, and manufacture craft is simple, excellent diode rectification effect
There should be particularly important status in the fields such as electronic device.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (9)
1. a kind of preparation method of noncrystal membrane device, it is characterised in that the preparation method includes：
One substrate is provided；
First electrode structure is formed on the substrate；
In the first electrode structure noncrystal membrane layer is formed away from the side of the substrate；
In the noncrystal membrane layer second electrode structure is formed away from the side of the first electrode structure；
Wherein, the first electrode structure contacts with each other with the second electrode structure and is connected.
2. preparation method according to claim 1, it is characterised in that the substrate is substrate of glass or silicon chip substrate or list
Brilliant strontium titanate base bottom or single-crystal strontium titanate mix niobium substrate.
3. preparation method according to claim 1, it is characterised in that the first electrode structure is platinum electrode or LaNiO3
Electrode or SrRuO3 electrodes or LaMnO3 electrodes or SrMnO3 electrodes.
4. preparation method according to claim 1, it is characterised in that the second electrode structure is gold electrode or platinum electrode
Or tungsten electrode or silver electrode or aluminium electrode.
5. preparation method according to claim 1, it is characterised in that the noncrystal membrane layer is Bi2FeCrO6Noncrystal membrane
Layer.
6. preparation method according to claim 5, it is characterised in that described to deviate from the base in the first electrode structure
The side at bottom, which forms noncrystal membrane layer, to be included：
Configure ferric nitrate precursor liquid and chromic nitrate precursor liquid and bismuth nitrate precursor liquid；
The ferric nitrate precursor liquid and the chromic nitrate precursor liquid and the bismuth nitrate precursor liquid are stood into setting time；
The ferric nitrate precursor liquid is added dropwise in the bismuth nitrate precursor liquid, at the uniform velocity stirs setting time, forms the first mixing
Liquid；
The chromic nitrate precursor liquid is added dropwise in first mixed liquor, at the uniform velocity stirs setting time, forms the second mixed liquor；
The concentration of second mixed liquor is adjusted using acetylacetone,2,4-pentanedione solution, so that the concentration of second mixed liquor reaches setting
It is required that form Bi2FeCrO6Precursor liquid；
Using the Bi2FeCrO6Precursor liquid forms setting thickness in the first electrode structure away from the side of the substrate
Noncrystal membrane layer.
7. preparation method according to claim 1, it is characterised in that described to deviate from described first in the noncrystal membrane layer
The side of electrode structure, which forms second electrode structure, to be included：
Film layer removal is carried out to the setting position of the noncrystal membrane layer, to expose the first electrode structure；
In the noncrystal membrane layer second electrode structure, and the first electrode are formed away from the side of the first electrode structure
Structure contacts with each other with the second electrode structure and is connected.
8. a kind of noncrystal membrane device, it is characterised in that the noncrystal membrane device includes：
Substrate；
First electrode structure on the substrate is set；
It is arranged on noncrystal membrane layer of the first electrode structure away from the side of the substrate；
It is arranged on second electrode structure of the noncrystal membrane layer away from the side of the first electrode structure；
Wherein, the first electrode structure contacts with each other with the second electrode structure and is connected.
9. noncrystal membrane device according to claim 8, it is characterised in that the noncrystal membrane layer is Bi2FeCrO6Amorphous
Film layer.
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| CN108899418A (en) * | 2018-07-09 | 2018-11-27 | 广东工业大学 | A kind of noncrystal membrane device and its preparation method and application |
| CN111987185A (en) * | 2020-07-29 | 2020-11-24 | 广东工业大学 | Double perovskite thin film device with photodiode effect and preparation method and application thereof |
| CN115101759A (en) * | 2022-08-24 | 2022-09-23 | 成都大学 | Detoxification type methanol oxidation composite electrode and preparation method thereof |
| CN116240493A (en) * | 2023-03-21 | 2023-06-09 | 中国科学院新疆理化技术研究所 | Method for preparing amorphous La-Mn-O film by direct-current magnetron sputtering |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108899418A (en) * | 2018-07-09 | 2018-11-27 | 广东工业大学 | A kind of noncrystal membrane device and its preparation method and application |
| CN111987185A (en) * | 2020-07-29 | 2020-11-24 | 广东工业大学 | Double perovskite thin film device with photodiode effect and preparation method and application thereof |
| CN115101759A (en) * | 2022-08-24 | 2022-09-23 | 成都大学 | Detoxification type methanol oxidation composite electrode and preparation method thereof |
| CN115101759B (en) * | 2022-08-24 | 2022-11-22 | 成都大学 | Detoxification type methanol oxidation composite electrode and preparation method thereof |
| CN116240493A (en) * | 2023-03-21 | 2023-06-09 | 中国科学院新疆理化技术研究所 | Method for preparing amorphous La-Mn-O film by direct-current magnetron sputtering |
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