CN107342229B - Amorphous thin film device and manufacturing method thereof - Google Patents
Amorphous thin film device and manufacturing method thereof Download PDFInfo
- Publication number
- CN107342229B CN107342229B CN201710595501.2A CN201710595501A CN107342229B CN 107342229 B CN107342229 B CN 107342229B CN 201710595501 A CN201710595501 A CN 201710595501A CN 107342229 B CN107342229 B CN 107342229B
- Authority
- CN
- China
- Prior art keywords
- precursor solution
- electrode structure
- solution
- electrode
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000243 solution Substances 0.000 claims description 77
- 239000002243 precursor Substances 0.000 claims description 66
- PHFQLYPOURZARY-UHFFFAOYSA-N chromium trinitrate Chemical compound [Cr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PHFQLYPOURZARY-UHFFFAOYSA-N 0.000 claims description 38
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 38
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 24
- 239000011259 mixed solution Substances 0.000 claims description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 13
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 239000002244 precipitate Substances 0.000 claims description 5
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 5
- 229910000608 Fe(NO3)3.9H2O Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- GVHCUJZTWMCYJM-UHFFFAOYSA-N chromium(3+);trinitrate;nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Cr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GVHCUJZTWMCYJM-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- SZQUEWJRBJDHSM-UHFFFAOYSA-N iron(3+);trinitrate;nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O SZQUEWJRBJDHSM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- FBXVOTBTGXARNA-UHFFFAOYSA-N bismuth;trinitrate;pentahydrate Chemical compound O.O.O.O.O.[Bi+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FBXVOTBTGXARNA-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910002328 LaMnO3 Inorganic materials 0.000 claims description 2
- 229910002340 LaNiO3 Inorganic materials 0.000 claims description 2
- 229910003387 SrMnO3 Inorganic materials 0.000 claims description 2
- 229910002353 SrRuO3 Inorganic materials 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 241000877463 Lanio Species 0.000 description 2
- 229910004121 SrRuO Inorganic materials 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 2
- 239000012362 glacial acetic acid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/247—Amorphous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
Abstract
The invention discloses an amorphous thin film device and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: providing a substrate; forming a first electrode structure on the substrate; forming an amorphous thin film layer on one side of the first electrode structure, which is far away from the substrate; forming a second electrode structure on one side of the amorphous thin film layer, which is far away from the first electrode structure; wherein the first electrode structure and the second electrode structure are in contact connection with each other. The manufacturing method is simple in process, and the amorphous thin film device manufactured by the manufacturing method is unidirectional in conductivity, has an obvious diode effect and is good in rectification effect.
Description
Technical Field
The present invention relates to the field of functional thin film and electronic device technologies, and more particularly, to an amorphous thin film device and a method for fabricating the same.
Background
With the continuous development of science and technology, thin film materials have received more and more attention in the electronic field, and the manufacturing technology of thin films is also continuously updated and developed. The existing methods for manufacturing thin film materials have corresponding technologies in both physical and chemical fields, such as pulsed laser deposition, physical vapor deposition, chemical vapor deposition, atomic deposition, and chemical solution deposition.
In the prior art, a rectifier diode has unidirectional conductivity, is used for converting alternating current into direct current, and is widely applied to a plurality of fields, such as the fields of automobiles, solar energy, household appliances and the like; that is, almost all electronic components with power supply use rectifier diodes, and the diodes occupy an indispensable position in various fields.
however, the rectifier diode in the prior art belongs to the metal oxide semiconductor, and how to provide an amorphous thin film device with a diode effect is a problem to be solved urgently by those skilled in the art.
disclosure of Invention
In order to solve the problems, the invention provides an amorphous thin film device and a manufacturing method thereof, the amorphous thin film device manufactured by the manufacturing method has obvious diode effect, the manufacturing process is simple, and the excellent diode rectification effect plays an important role in the fields of electronic devices and the like.
in order to achieve the purpose, the invention provides the following technical scheme:
A manufacturing method of an amorphous thin film device, the manufacturing method comprising:
providing a substrate;
Forming a first electrode structure on the substrate;
forming an amorphous thin film layer on one side of the first electrode structure, which is far away from the substrate;
Forming a second electrode structure on one side of the amorphous thin film layer, which is far away from the first electrode structure;
wherein the first electrode structure and the second electrode structure are in contact connection with each other.
Preferably, in the above manufacturing method, the substrate is a glass substrate or a silicon wafer substrate or a single crystal strontium titanate niobium-doped substrate.
Preferably, in the above manufacturing method, the first electrode structure is a platinum electrode or a LaNiO3 electrode or a SrRuO3 electrode or a LaMnO3 electrode or a SrMnO3 electrode.
preferably, in the above manufacturing method, the second electrode structure is a gold electrode, a platinum electrode, a tungsten electrode, a silver electrode, or an aluminum electrode.
preferably, in the above manufacturing method, the amorphous thin film layer is a Bi 2 FeCrO 6 amorphous thin film layer.
Preferably, in the above manufacturing method, the forming an amorphous thin film layer on a side of the first electrode structure facing away from the substrate includes:
Preparing ferric nitrate precursor solution, chromium nitrate precursor solution and bismuth nitrate precursor solution;
standing the ferric nitrate precursor solution, the chromium nitrate precursor solution and the bismuth nitrate precursor solution for a set time;
Dropwise adding the ferric nitrate precursor solution into the bismuth nitrate precursor solution, and stirring at a constant speed for a set time to form a first mixed solution;
Dropwise adding the chromium nitrate precursor solution into the first mixed solution, and stirring at a constant speed for a set time to form a second mixed solution;
adjusting the concentration of the second mixed solution by adopting an acetylacetone solution to enable the concentration of the second mixed solution to reach a set requirement, and forming a Bi 2 FeCrO 6 precursor solution;
And forming an amorphous thin film layer with a set thickness on the side of the first electrode structure, which is far away from the substrate, by adopting the Bi 2 FeCrO 6 precursor solution.
Preferably, in the above manufacturing method, the forming of the second electrode structure on the side of the amorphous thin film layer away from the first electrode structure includes:
Removing the film layer at the set position of the amorphous film layer to expose the first electrode structure;
and forming a second electrode structure on one side of the amorphous film layer, which is far away from the first electrode structure, wherein the first electrode structure and the second electrode structure are in contact connection with each other.
the present invention also provides an amorphous thin film device, including:
A substrate;
a first electrode structure disposed on the substrate;
The amorphous thin film layer is arranged on one side, away from the substrate, of the first electrode structure;
the second electrode structure is arranged on one side, away from the first electrode structure, of the amorphous thin film layer;
Wherein the first electrode structure and the second electrode structure are in contact connection with each other.
Preferably, in the above amorphous thin film device, the amorphous thin film layer is a Bi 2 FeCrO 6 amorphous thin film layer.
as can be seen from the above description, the amorphous thin film device manufactured by the manufacturing method has an obvious diode effect, and the manufacturing process is simple, and the excellent diode rectification effect plays an important role in the fields of electronic devices and the like.
Drawings
in order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
fig. 1 is a schematic flow chart of a method for manufacturing an amorphous thin film device according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method for fabricating an amorphous thin film layer according to an embodiment of the present invention;
FIG. 3 is a current-voltage diagram of an amorphous thin film device according to an embodiment of the present invention;
Fig. 4 is a schematic diagram of a basic structure of an amorphous thin film device according to an embodiment of the present invention.
Detailed Description
the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for manufacturing an amorphous thin film device according to an embodiment of the present invention.
The manufacturing method comprises the following steps:
S101: a substrate is provided.
Specifically, the substrate includes, but is not limited to, a glass substrate or a silicon wafer substrate or a single crystal strontium titanate niobium-doped substrate or a Pt/Ti/SiO 2/Si (100) platinized gold bottom electrode silicon wafer substrate.
S102: a first electrode structure is formed on the substrate.
Specifically, the first electrode structure comprises, but is not limited to, a platinum electrode or a LaNiO 3 electrode or a SrRuO 3 electrode or a LaMnO 3 electrode or a SrMnO 3 electrode or an indium-doped tin oxide film electrode or a fluorine-doped tin oxide film electrode, and specifically, LaNiO 3 solution or SrRuO 3 solution or a LaMnO 3 solution or a SrMnO 3 solution and the like are prepared, the adopted solution is spin-coated on the substrate, and baking is carried out at a proper temperature to form the required first electrode structure.
s103: and forming an amorphous thin film layer on one side of the first electrode structure, which is far away from the substrate.
Specifically, the amorphous thin film layer includes, but is not limited to, a Bi 2 FeCrO 6 amorphous thin film layer.
S104: and forming a second electrode structure on one side of the amorphous film layer, which is far away from the first electrode structure.
Specifically, the second electrode structure includes, but is not limited to, a gold electrode, a platinum electrode, a tungsten electrode, a silver electrode, or an aluminum electrode.
The first electrode structure and the second electrode structure are connected in contact with each other.
The amorphous thin film device manufactured by the manufacturing method has obvious diode effect, the manufacturing process is simple, and the excellent diode rectification effect has an extremely important position in the fields of electronic devices and the like.
based on the above embodiments of the present invention, in another embodiment of the present invention, please refer to fig. 2, fig. 2 is a schematic flow chart of a method for manufacturing an amorphous thin film layer according to an embodiment of the present invention; the forming of the amorphous thin film layer on the side of the first electrode structure facing away from the substrate includes:
S201: preparing ferric nitrate precursor solution, chromium nitrate precursor solution and bismuth nitrate precursor solution.
the preparation method comprises the following steps of preparing ferric nitrate precursor liquid, namely dissolving ferric nitrate nonahydrate Fe (NO 3) 3.9H 2 O (98.5%) in deionized water according to a stoichiometric ratio, stirring for 2 hours at normal temperature so as to be fully dissolved, and further forming the ferric nitrate precursor liquid, wherein the ferric nitrate precursor liquid is prepared by using ferric nitrate nonahydrate Fe (NO 3) 3.9H 2 O (98.5%) as a raw material and deionized water as a solvent;
The preparation method comprises the steps of using chromium nitrate nonahydrate Cr (NO 3) 3.9H 2 O (99%) as a raw material and deionized water as a solvent, dissolving the chromium nitrate nonahydrate Cr (NO 3) 3.9H 2 O (99%) in the deionized water according to a stoichiometric ratio, and stirring at normal temperature for 2 hours to fully dissolve the chromium nitrate precursor liquid to form the chromium nitrate precursor liquid;
The preparation method of the bismuth nitrate precursor solution comprises the steps of using bismuth nitrate pentahydrate Bi (NO 3) 3.5H 2 O (99%) as a raw material and glacial acetic acid as a solvent, dissolving bismuth nitrate pentahydrate Bi (NO 3) 3.5H 2 O (99%) in glacial acetic acid according to a stoichiometric ratio, heating and stirring at 50 ℃ for 5 hours to fully dissolve, then dropwise adding a proper amount of acetylacetone stabilizer, stirring again for 50 minutes, and adopting 5% excessive Bi element to reduce volatilization loss of the Bi element in an annealing process to finally form the bismuth nitrate precursor solution.
s202: and standing the ferric nitrate precursor solution, the chromium nitrate precursor solution and the bismuth nitrate precursor solution for a set time.
Specifically, the ferric nitrate precursor solution, the chromium nitrate precursor solution and the bismuth nitrate precursor solution are respectively kept still for 2 to 3 days, and if no precipitate is generated, the ferric nitrate precursor solution, the chromium nitrate precursor solution and the bismuth nitrate precursor solution can be used; if any precipitate is formed, the solution is prepared again.
S203: and dropwise adding the ferric nitrate precursor solution into the bismuth nitrate precursor solution, and stirring at a constant speed for a set time to form a first mixed solution.
specifically, the ferric nitrate precursor solution is dripped into the bismuth nitrate precursor solution, and the mixture is stirred at a constant speed for 5 hours to form a first mixed solution.
S204: and dropwise adding the chromium nitrate precursor solution into the first mixed solution, and stirring at a constant speed for a set time to form a second mixed solution.
specifically, the chromium nitrate precursor solution is dropwise added into the first mixed solution, and stirred at a constant speed for 5 hours to form a second mixed solution.
And S205, adjusting the concentration of the second mixed solution by adopting an acetylacetone solution to enable the concentration of the second mixed solution to reach a set requirement, and forming a Bi 2 FeCrO 6 precursor solution.
Specifically, if the second mixed solution is not precipitated, the concentration of the second mixed solution is adjusted by adopting an acetylacetone solution so as to enable the concentration of the second mixed solution to reach 0.25mol/L, and the filtering is carried out by adopting filter paper so as to reduce dust pollution in the air, thereby forming a Bi 2 FeCrO 6 precursor solution.
and S206, forming an amorphous thin film layer with a set thickness on the side of the first electrode structure, which is far away from the substrate, by using the Bi 2 FeCrO 6 precursor solution.
specifically, the Bi 2 FeCrO 6 precursor solution is dripped to one side of the first electrode structure, which is away from the substrate, spin-coated on a spin coater at the speed of 800r/min for 10 seconds, then rotated at the speed of 2800r/min for 20 seconds, after each layer is coated, the wet film is baked on a heating table at the temperature of 180 ℃ for 10 minutes to remove moisture in the wet film, the adhesive is baked at the temperature of 300 ℃ for 10 minutes to decompose organic matters in the film layer, and the steps are repeated for 2 to 3 times to form an amorphous film layer with a set thickness.
Based on the foregoing embodiment of the present invention, in another embodiment of the present invention, the forming the second electrode structure on the side of the amorphous thin film layer away from the first electrode structure includes:
Removing the film layer at the set position of the amorphous film layer to expose the first electrode structure;
and forming a second electrode structure on one side of the amorphous film layer, which is far away from the first electrode structure, wherein the first electrode structure and the second electrode structure are in contact connection with each other.
Specifically, a set position of the amorphous film layer is subjected to film layer removal by using diluted hydrofluoric acid to expose the first electrode structure; respectively annealing for 10min at 400 ℃ and 450 ℃ in a rapid annealing furnace; forming a second electrode structure with the diameter of 0.25mm by using an electron beam evaporation sputtering method by adopting a template covering method;
the specific shape of the second electrode structure is not limited, and the second electrode structure may be a film structure.
Referring to fig. 3, fig. 3 is a current-voltage diagram of an amorphous thin film device according to an embodiment of the present invention; in the test process, the voltage is increased from 0V to the maximum test voltage, then is reduced to the maximum negative voltage, and finally 0V is detected again.
As shown in FIG. 3, in the amorphous thin film device manufactured by the manufacturing method, during the process of annealing at 400 ℃, the voltage is increased from 0V to 2V and then is reduced from 2V to 0V, the hysteresis phenomenon of the curve hardly occurs, but during the process of reducing from 0V to-2V and then returning to 0V again, the hysteresis phenomenon of the curve occurs obviously. Similarly, during the 450 ℃ annealing, the voltage is reduced from 0V to-3V and then returns to 0V again, and the curve also shows obvious hysteresis. And the current has an asymmetric phenomenon under all test voltages, and the negative maximum current is larger than the positive current. Therefore, as can be seen from fig. 3, the amorphous thin film device has unidirectional conductivity, significant diode effect, and good rectification effect.
The present invention further provides an amorphous thin film device, and referring to fig. 4, fig. 4 is a schematic diagram of a basic structure of an amorphous thin film device according to an embodiment of the present invention, where the amorphous thin film device includes:
A substrate 41;
A first electrode structure 42 disposed on the substrate 41;
An amorphous thin-film layer 43 disposed on a side of the first electrode structure 42 facing away from the substrate 41;
A second electrode structure 44 disposed on a side of the amorphous thin film layer 43 facing away from the first electrode structure 42;
Wherein the first electrode structure 42 and the second electrode structure 44 are connected in contact with each other.
specifically, the amorphous thin film layer is a Bi 2 FeCrO 6 amorphous thin film layer.
the amorphous thin film device has obvious diode effect and simple manufacturing process, and the excellent diode rectification effect has an extremely important position in the fields of electronic devices and the like.
the previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. a manufacturing method of an amorphous thin film device is characterized by comprising the following steps:
providing a substrate;
Forming a first electrode structure on the substrate;
Forming an amorphous thin film layer on one side of the first electrode structure, which is far away from the substrate;
Forming a second electrode structure on one side of the amorphous thin film layer, which is far away from the first electrode structure;
the amorphous thin film layer is a Bi 2 FeCrO 6 amorphous thin film layer;
wherein the forming of the amorphous thin film layer on the side of the first electrode structure facing away from the substrate comprises:
Preparing ferric nitrate precursor solution, chromium nitrate precursor solution and bismuth nitrate precursor solution, wherein the ferric nitrate precursor solution is prepared by using ferric nitrate nonahydrate Fe (NO 3) 3.9H 2 O as a raw material and deionized water as a solvent, dissolving ferric nitrate nonahydrate Fe (NO 3) 3.9H 2 O in the deionized water according to a stoichiometric ratio, stirring for 2 hours at normal temperature to fully dissolve the ferric nitrate precursor solution, the chromium nitrate precursor solution is prepared by using chromium nitrate nonahydrate Cr (NO 3) 3.9H 2 O as a raw material and deionized water as a solvent, dissolving chromium nitrate nonahydrate Cr (NO 3) 3.9H 2 O in the deionized water according to the stoichiometric ratio, stirring for 2 hours at normal temperature to fully dissolve the chromium nitrate precursor solution, forming the chromium nitrate precursor solution, the bismuth nitrate precursor solution is prepared by using bismuth nitrate pentahydrate Bi (NO 3) 3.5H 2 O as a raw material and ice as a solvent, stirring for 2 hours to fully dissolve the bismuth nitrate precursor solution according to the stoichiometric ratio, and heating for annealing, wherein bismuth nitrate is added in bismuth nitrate, bismuth nitrate is added and the bismuth nitrate precursor solution is added into bismuth nitrate solution, and the bismuth nitrate is added into bismuth nitrate solution, wherein the bismuth nitrate is stirred for annealing, the bismuth nitrate is added with the bismuth nitrate solution;
standing the ferric nitrate precursor solution, the chromium nitrate precursor solution and the bismuth nitrate precursor solution for a set time; specifically, the ferric nitrate precursor solution, the chromium nitrate precursor solution and the bismuth nitrate precursor solution are respectively kept still for 2 to 3 days, and if no precipitate is generated, the ferric nitrate precursor solution, the chromium nitrate precursor solution and the bismuth nitrate precursor solution can be used; if the precipitate is generated, preparing the solution again;
dropwise adding the ferric nitrate precursor solution into the bismuth nitrate precursor solution, and stirring at a constant speed for a set time to form a first mixed solution; specifically, the set time is 5 hours;
dropwise adding the chromium nitrate precursor solution into the first mixed solution, and stirring at a constant speed for a set time to form a second mixed solution; specifically, the set time is 5 hours;
the method comprises the steps of preparing a Bi 2 FeCrO 6 precursor solution, adjusting the concentration of a second mixed solution by adopting an acetylacetone solution so that the concentration of the second mixed solution meets the set requirement, specifically, if the second mixed solution does not generate precipitates, adjusting the concentration of the second mixed solution by adopting the acetylacetone solution so that the concentration of the second mixed solution reaches 0.25mol/L, and filtering by adopting filter paper so as to reduce dust pollution in air and further form the Bi 2 FeCrO 6 precursor solution;
Specifically, the Bi 2 FeCrO 6 precursor liquid is dripped to one side, away from the substrate, of the first electrode structure, spin-coated for 10 seconds at the speed of 800r/min on a spin coater, then rotated for 20 seconds at the speed of 2800r/min, the wet film is baked for 10 minutes at the temperature of 180 ℃ on a heating table after each layer is coated, so as to remove moisture in the wet film, the wet film is baked for 10 minutes at the temperature of 300 ℃ so as to decompose organic matters in the film layer, and the steps are repeated for 2 to 3 times so as to form the amorphous film layer with the set thickness.
2. the method according to claim 1, wherein the substrate is a glass substrate, a silicon wafer substrate, or a single crystal strontium titanate substrate.
3. the method according to claim 2, wherein the single-crystal strontium titanate substrate is a single-crystal strontium titanate niobium-doped substrate.
4. the method of claim 1, wherein the first electrode structure is a platinum electrode or a LaNiO3 electrode or a SrRuO3 electrode or a LaMnO3 electrode or a SrMnO3 electrode.
5. the method of claim 1, wherein the second electrode structure is a gold electrode, a platinum electrode, a tungsten electrode, a silver electrode, or an aluminum electrode.
6. The method of claim 1, wherein the forming a second electrode structure on a side of the amorphous thin film layer facing away from the first electrode structure comprises:
removing the film layer at the set position of the amorphous film layer to expose the first electrode structure;
And forming a second electrode structure on one side of the amorphous film layer, which is far away from the first electrode structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710595501.2A CN107342229B (en) | 2017-07-20 | 2017-07-20 | Amorphous thin film device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710595501.2A CN107342229B (en) | 2017-07-20 | 2017-07-20 | Amorphous thin film device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107342229A CN107342229A (en) | 2017-11-10 |
| CN107342229B true CN107342229B (en) | 2019-12-10 |
Family
ID=60216214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710595501.2A Expired - Fee Related CN107342229B (en) | 2017-07-20 | 2017-07-20 | Amorphous thin film device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107342229B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108899418B (en) * | 2018-07-09 | 2022-02-15 | 广东工业大学 | Amorphous thin film device and preparation method and application thereof |
| CN111987185A (en) * | 2020-07-29 | 2020-11-24 | 广东工业大学 | Double perovskite thin film device with photodiode effect and preparation method and application thereof |
| CN115101759B (en) * | 2022-08-24 | 2022-11-22 | 成都大学 | Detoxification type methanol oxidation composite electrode and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4671194B2 (en) * | 2006-09-19 | 2011-04-13 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
| CN101577311A (en) * | 2009-06-09 | 2009-11-11 | 中国科学院微电子研究所 | One-time programming memory and manufacturing method thereof |
| CN103121836B (en) * | 2012-11-28 | 2015-01-28 | 陕西科技大学 | Method for preparing BiFe1-xCrxO3 ferroelectric film by using sol-gel method |
-
2017
- 2017-07-20 CN CN201710595501.2A patent/CN107342229B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN107342229A (en) | 2017-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107342229B (en) | Amorphous thin film device and manufacturing method thereof | |
| CN105489486B (en) | A kind of preparation method based on the high k dielectric layer thin film transistor (TFT) of ultra-thin magnesia | |
| KR101284587B1 (en) | P-type transparent oxide semiconductor, transistor having the same, and manufacture method of the same | |
| US10032923B2 (en) | Metal oxide thin film, method for manufacturing the same, and solution for metal oxide thin film | |
| CN102623459B (en) | Thin-film transistor memory and preparation method thereof | |
| CN102154636B (en) | Preparation method for p type high transmission rate (100)-oriented LaNiO3 nano film | |
| CN105655389B (en) | Active layer, thin film transistor (TFT), array base palte, display device and preparation method | |
| CN100586582C (en) | Method for preparing barium stan-titanate ferroelectric film | |
| CN106684161B (en) | A kind of silicon based hetero-junction solar cell and preparation method thereof | |
| CN103268897A (en) | Ultraviolet detector of large-energy-gap oxide semiconductor thin film layer and with passivation function and preparation method thereof | |
| CN101388335A (en) | Preparation for ferroelectric material of quartz/lanthanum nickelate/bismuth ferrite-lead titanate | |
| CN103107242A (en) | Method for preparing bismuth vanadate solar cell on glass substrate | |
| US9224598B2 (en) | Method of formation of tin oxide semiconductor thin film doped with antimony | |
| Lee et al. | Fabrication of high transmittance and low sheet resistance dual ion doped tin oxide films and their application in dye-sensitized solar cells | |
| CN103311313A (en) | Oxide thin film transistor and preparation method thereof | |
| Rajpure et al. | A study of substrate variation effects on the properties of n-Sb2S3 thin film/polyiodide/C photoelectrochemical solar cells | |
| CN105374886A (en) | Passivation method | |
| CN105448524A (en) | Silver-doped organometallic perovskite material, solar cell and manufacturing method thereof | |
| Nkhaili et al. | Structural, optical, and electrical characteristics of zinc oxide and copper oxide films and their heterojunctions | |
| TWI473276B (en) | Method of patterning tco(transparent conductive oxide) of a conductive glass and conductive glass prepared thereby | |
| CN108232011B (en) | Amorphous strontium titanate thin-film device and preparation method thereof | |
| Duan et al. | Transparent and conducting Ga-doped ZnO films on flexible substrates prepared by sol–gel method | |
| JP6741439B2 (en) | Method of manufacturing thin film transistor | |
| CN108899418B (en) | Amorphous thin film device and preparation method and application thereof | |
| Wang et al. | Solution processed resistive random access memory devices for transparent solid-state circuit systems |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191210 Termination date: 20200720 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |