CN112909166B - Nerve synapse bionic device based on polyelectrolyte double-layer structure - Google Patents
Nerve synapse bionic device based on polyelectrolyte double-layer structure Download PDFInfo
- Publication number
- CN112909166B CN112909166B CN202110103065.9A CN202110103065A CN112909166B CN 112909166 B CN112909166 B CN 112909166B CN 202110103065 A CN202110103065 A CN 202110103065A CN 112909166 B CN112909166 B CN 112909166B
- Authority
- CN
- China
- Prior art keywords
- layer
- polyelectrolyte
- electrode layer
- polymer electrolyte
- double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920000867 polyelectrolyte Polymers 0.000 title claims abstract description 51
- 239000011664 nicotinic acid Substances 0.000 title claims abstract description 18
- 210000000225 synapse Anatomy 0.000 title abstract description 21
- 210000005036 nerve Anatomy 0.000 title abstract description 14
- 239000005518 polymer electrolyte Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000003592 biomimetic effect Effects 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 102
- 230000008859 change Effects 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 7
- 239000002346 layers by function Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- MAGFQRLKWCCTQJ-UHFFFAOYSA-N 4-ethenylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-N 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 229920002518 Polyallylamine hydrochloride Polymers 0.000 claims description 2
- 229920002873 Polyethylenimine Polymers 0.000 claims description 2
- 229920002125 Sokalan® Polymers 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 7
- 210000002569 neuron Anatomy 0.000 description 6
- 230000000638 stimulation Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 210000004556 brain Anatomy 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 210000000653 nervous system Anatomy 0.000 description 2
- 239000002858 neurotransmitter agent Substances 0.000 description 2
- 230000001242 postsynaptic effect Effects 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 210000005215 presynaptic neuron Anatomy 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Landscapes
- Laminated Bodies (AREA)
Abstract
The invention discloses a polymer electrolyte double-layer structure-based neurosynaptic biomimetic device. The bionic device comprises: the double-layer structure film comprises a lower electrode layer, a positive charge polyelectrolyte layer with positive charge groups on the main chain, and a negative charge polyelectrolyte layer with negative charge groups on the main chain, wherein the positive charge polyelectrolyte layer is prepared on the lower electrode layer; the lower electrode layer comprises a substrate and a first electrode layer positioned above the substrate; the upper electrode layer is the second electrode layer; the positive and negative charge polymer electrolyte films are prepared by a spin coating method. The nerve synapse bionic device has the advantages of simple and quick preparation method, low price of used materials, no pollution, capability of being prepared on a flexible substrate, capability of being prepared into a transparent device, capability of efficiently simulating the nerve synapse function, plasticity and the like.
Description
Technical Field
The invention relates to the technical field of synapse bionic devices, in particular to a neurosynapse bionic device based on a polyelectrolyte double-layer structure.
Background
Because of the high efficiency of human brain work, neurosynaptic simulation, the first important stage of the physical hierarchy of brain work, is receiving increasing attention. The synapses are important sites for contacting neurons and for transmitting information. The learning and memory functions of biological systems are based on the precise control of ion flux between neurons and synapses. Binding of neurotransmitters to receptors on the posterior membrane alters receptor conformation, which results in a corresponding change in postsynaptic membrane potential, which is transmitted by presynaptic neurons to the postsynaptic neurons for stimulation or inhibition. Synapses change under the stimulation of a certain electrical signal, so that the effect of enhancing or weakening the connection strength between neurons is achieved, and the neurons have plasticity.
Biological synapse-like bionic electrons are developed on the basis of the research on two-terminal devices. The appearance of memristors and the synaptic-like multi-resistance state performance of the memristors have attracted attention from the 2008. Memristors can be roughly classified into a conductive filament type (filament type), an interface type (interface type) and a bulk type (bulk type) according to the working mechanism of a device, the area of a switch and the structural shape. Depending on the type of particles that the memristor migrates in operation, there are again a cationic device, an anionic device, and a bi-ionic device. However, the relatively simplistic device structure of two-terminal devices such as memristors often presents significant challenges in selecting appropriate active layer materials and stimulus signal settings and discussing device operating mechanisms. Therefore, a memristor device which is simple in material, reasonable in structure and clear in working mechanism is needed to be applied to biological synapse-like bionic research.
Disclosure of Invention
The invention aims to provide a novel nerve synapse bionic device which is simple in material, reasonable in structure and clear in working mechanism aiming at the difficulty of selecting an active layer material and a stimulation signal design of a nerve synapse bionic device based on a memristor at the present stage and the uncertainty of the working principle of the device, so that the resistance state of a material system can be accurately controlled through an accurate stimulation signal, and further, the nerve synapse function can be efficiently simulated and the device has plasticity.
In order to achieve the purpose, the invention provides the following scheme:
a polymer electrolyte double-layer structure-based nerve synapse bionic device comprises: the electrode comprises a lower electrode layer, a polyelectrolyte double-layer film layer (comprising a positive charge polyelectrolyte layer and a negative charge polyelectrolyte layer, wherein the upper position and the lower position of the positive charge polyelectrolyte layer and the negative charge polyelectrolyte layer can be interchanged) prepared on the lower electrode layer and an upper electrode layer positioned above the polyelectrolyte double-layer film layer;
the lower electrode layer comprises a substrate and a first electrode layer positioned above the substrate; the upper electrode layer is the second electrode layer.
Optionally, the positive charge polyelectrolyte layer includes one of polyelectrolyte polyethyleneimine, polyallylamine hydrochloride, or polydimethyldiallylammonium chloride with a positive charge group on a main chain.
Optionally, the negatively charged polyelectrolyte layer includes one of polyelectrolyte polyacrylic acid or poly 4-styrenesulfonic acid having a negatively charged group on a main chain.
Alternatively, the substrate may be a silicon wafer, glass, PET, PI, or other common substrate.
Optionally, the thicknesses of the lower electrode layer and the upper electrode layer are both 50-500 nm.
Optionally, the thickness of the polyelectrolyte double-layer film layer is 3-20 nm (wherein, the thickness of the polyelectrolyte layer with positive charges and negative charges is 1-10 nm).
Advantages and advantageous effects of the invention
The invention provides a polymer electrolyte double-layer structure-based neurosynaptic biomimetic device. The positive and negative polyelectrolyte double layers are used as the resistance change functional layer, and an electric field potential barrier generated by charge separation appears at the interface of the positive charge polyelectrolyte layer and the negative charge polyelectrolyte layer. Under the action of applied voltage, the migration phenomenon of the main chain of the polymer electrolyte is caused by the movement of the counter ions and the positive and negative charge groups in the polymer electrolyte layer, so that the potential barrier of the interface electric field is changed to generate the resistance state change of the functional layer. The phenomenon can simulate the characteristics of biological synapses, and the high-resistance state and the low-resistance state of the synapses slowly change and have stable ranges; a plurality of stable resistance states appear and have good retention characteristics, and when electric pulse stimulation is repeatedly applied, the resistance can excellently and repeatedly carry out high-low resistance conversion; the resistance function layer structure of a system is accurately controlled through an electric field to regulate and control the resistance state of a material, so that the nerve synapse function can be efficiently simulated, and the plasticity is realized; simple manufacturing process, stable performance and wide application prospect.
Drawings
FIG. 1 is a schematic structural diagram of a polymer electrolyte double-layer structure-based neurosynaptic biomimetic device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the structure of the polyelectrolyte double-layer thin film layer in two states of low resistance and high resistance according to the embodiment of the present invention.
FIG. 3 is a graph showing actually measured I-V curves of a device fabricated by using an ITO transparent electrode as an electrode layer according to an embodiment of the present invention.
FIG. 4 is a graph of low and high resistance values versus read time actually measured for a device fabricated using ITO transparent electrodes as electrode layers in accordance with an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Fig. 1 is a schematic structural diagram of a neurosynaptic biomimetic device based on a polyelectrolyte double-layer structure according to an embodiment of the present invention.
Referring to fig. 1, the polyelectrolyte-based neurosynaptic biomimetic device of an embodiment includes: a lower electrode layer 3, a polyelectrolyte double-layer thin film layer 2 deposited on the lower electrode layer 3, and an upper electrode layer 1 positioned above the polyelectrolyte double-layer thin film layer 2; the lower electrode layer 3 comprises a substrate 3-2 and a first electrode layer 3-1 positioned above the substrate 3-2; the upper electrode layer 1 is a second electrode layer; the polyelectrolyte double-layer thin film layer 2 comprises a positive charge polyelectrolyte layer 2-2 positioned above the lower electrode layer 3 and a negative charge polyelectrolyte layer 2-1 positioned above the positive charge polyelectrolyte layer 2-2.
As an alternative embodiment, the substrate is one of silicon wafer, glass, PET or PI, and other common substrates.
As an alternative embodiment, the thickness of the lower electrode layer 3 and the upper electrode layer 1 is 50 to 500nm.
In an alternative embodiment, the thickness of the polyelectrolyte double-layer thin film layer 2 is 3 to 20nm.
The principle of the present embodiment of the polymer electrolyte double-layer structure-based neurosynaptic biomimetic device is as follows:
when the polyelectrolyte double-layer structure is formed, a depletion layer is formed between double-layer contact interfaces and potential barriers are generated to prevent ions from moving, so that a high-resistance state is formed; after electrifying, under the action of an electric field, a polymer chain between the double-layer interfaces of the polymer electrolyte moves to eliminate a depletion layer, so that a low-resistance state is formed. On the basis, the polyelectrolyte chain can be restored to the initial state under the action of the opposite electric field to form a depletion layer, so that the resistance is changed into a high-resistance state. As shown in fig. 2, part (a) in fig. 2 is a high resistance state diagram in a state where a depletion layer is present, and part (b) in fig. 2 is a low resistance state diagram in a state where the depletion layer is lost. Under the action of an electric field, the bionic device is converted from a high-resistance state to a low-resistance state (shown as the change of an I-V curve in fig. 3), and the high-resistance state and the low-resistance state have long-term sustainability (shown as fig. 4). The state is equivalent to a '1' state and a '0' state in the computer, and the computer adopts a '0' and a '1' to form codes to store information to realize the storage function. This process is very similar to the behavior of neurotransmitters in synapses, and therefore the neurosynaptic biomimetic device can mimic the plasticity of neurons.
The polymer electrolyte double-layer structure-based neurosynaptic bionic device has the following advantages:
the polymer electrolyte is an organic chemical material with low price, no pollution and extremely high controllability, and has potential application in microelectronics, optics and other aspects. In the embodiment, the polyelectrolyte double-layer film is used as a resistance change functional layer, and can simulate the characteristics of biological synapses under the action of an electric field, wherein the high-resistance state and the low-resistance state of the polyelectrolyte double-layer film slowly change and have a stable range; a plurality of stable resistance states appear and have good retention characteristics, and when electric pulse stimulation is repeatedly applied, the resistance can excellently and repeatedly carry out high-low resistance conversion; the nerve synapse device has the advantages of simple structure, flexibility, transparency and the like, so that the nerve synapse bionic device takes one step towards the artificial nerve; the response of the human body to the outside depends on the electronic signal transmission of a nervous system in the human body, the nervous system is damaged to be equivalent to an incomplete circuit, no way is available for electrifying, and the nerve synapse bionic device is expected to serve as a lead, so that the nerve synapse bionic device has important significance in the field of biomedicine; the method can powerfully promote scientists to construct an efficient and exquisite brain bionic computer, and improve the efficiency of simulating the human brain by the computer; the device has the advantages of simple manufacturing process, stable performance and wide application prospect.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the foregoing, the description is not to be taken in a limiting sense.
Claims (8)
1. A polymer electrolyte double-layer structure-based neurosynaptic bionic device is characterized by comprising: the electrode comprises a lower electrode layer, a polyelectrolyte double-layer thin film layer deposited on the lower electrode layer and an upper electrode layer above the polyelectrolyte double-layer thin film layer; the lower electrode layer comprises a substrate and a first electrode layer positioned above the substrate; the upper electrode layer is a second electrode layer; the polymer electrolyte double-layer film layer comprises a negative charge polymer electrolyte layer and a positive charge polymer electrolyte layer; the negative charge polyelectrolyte layer is a polyelectrolyte with negative charge groups on the main chain, the positive charge polyelectrolyte layer is a polyelectrolyte with positive charge groups on the main chain, and the positive charge polyelectrolyte layer and the negative charge polyelectrolyte layer are used as resistance change functional layers.
2. The polymer electrolyte bilayer structure-based neurosynaptic biomimetic device according to claim 1, wherein the substrate is a common substrate comprising silicon wafer, glass, PET or PI.
3. The polymer electrolyte bilayer structure-based neurosynaptic biomimetic device according to claim 1, wherein the film thickness of the lower electrode layer and the upper electrode layer is 50-500 nm.
4. The polyelectrolyte bilayer structure-based neurosynaptic biomimetic device according to claim 1, wherein the positively charged polyelectrolyte layer comprises one of polyethyleneimine, polyallylamine hydrochloride, or polydimethyldiallylammonium chloride.
5. The polyelectrolyte bilayer structure-based neurosynaptic biomimetic device according to claim 1, wherein the negatively charged polyelectrolyte layer comprises one of polyacrylic acid or poly 4-styrenesulfonic acid.
6. The polymer electrolyte bilayer structure-based neurosynaptic biomimetic device according to any one of claims 1 to 5, wherein the thickness of the positive charge polymer electrolyte layer thin film is 1-10 nm.
7. The device of any one of claims 1 to 5, wherein the thickness of the negatively charged polyelectrolyte layer is 1-10 nm.
8. The device of any one of claims 1 to 5, wherein the positions of the positive charge polyelectrolyte layer and the negative charge polyelectrolyte layer in the polyelectrolyte double-layer thin film layer structure are interchangeable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110103065.9A CN112909166B (en) | 2021-01-26 | 2021-01-26 | Nerve synapse bionic device based on polyelectrolyte double-layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110103065.9A CN112909166B (en) | 2021-01-26 | 2021-01-26 | Nerve synapse bionic device based on polyelectrolyte double-layer structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112909166A CN112909166A (en) | 2021-06-04 |
| CN112909166B true CN112909166B (en) | 2022-11-25 |
Family
ID=76119814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110103065.9A Active CN112909166B (en) | 2021-01-26 | 2021-01-26 | Nerve synapse bionic device based on polyelectrolyte double-layer structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112909166B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206744A (en) * | 2015-08-18 | 2015-12-30 | 电子科技大学 | Flexible resistive random access memory of dual-layer film structure and manufacturing method for flexible resistive random access memory |
| WO2017157074A1 (en) * | 2016-03-18 | 2017-09-21 | 中国科学院微电子研究所 | Selector for use in bipolar resistive memory and manufacturing method for selector |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5895932B2 (en) * | 2011-05-10 | 2016-03-30 | 日本電気株式会社 | Resistance change element, semiconductor device including the same, and manufacturing method thereof |
| CN104979472B (en) * | 2014-04-11 | 2017-07-28 | 中国科学院宁波材料技术与工程研究所 | A kind of organic polymer memristor construction unit |
| CN104966778B (en) * | 2015-05-07 | 2018-01-23 | 清华大学 | A kind of frequency response learner of long-term memory and preparation method thereof |
| CN105304813A (en) * | 2015-09-23 | 2016-02-03 | 复旦大学 | Neural synapse simulation device and preparation method thereof |
| KR101849845B1 (en) * | 2016-07-01 | 2018-05-30 | 건국대학교 산학협력단 | Capacitor |
| CN106206944A (en) * | 2016-09-29 | 2016-12-07 | 南京大学 | A kind of nano-film memristor and preparation method thereof |
| CN106601909B (en) * | 2016-12-20 | 2019-08-02 | 南京邮电大学 | A kind of porphyrin memristor and preparation method thereof |
| CN107681048B (en) * | 2017-09-01 | 2020-01-14 | 河北大学 | Memristor with nerve bionic function and preparation method and application |
| KR102184039B1 (en) * | 2018-12-18 | 2020-11-27 | 성균관대학교산학협력단 | Memristor and non-valatile memory device having the memristor |
| US10903420B2 (en) * | 2019-04-16 | 2021-01-26 | International Business Machines Corporation | Lithium-compound based solid state memristor device for neuromorphic computing |
| KR102198574B1 (en) * | 2019-05-29 | 2021-01-06 | 가천대학교 산학협력단 | Flexible self-rectifying molecular memristor and method of manufacturing the same |
| CN110323333B (en) * | 2019-07-09 | 2022-08-19 | 广州大学 | Memristor based on natural organic material and preparation method thereof |
| CN111477740B (en) * | 2020-05-14 | 2023-09-26 | 天津理工大学 | Polymer/quantum dot film memristor capable of simulating nerve synapses and preparation method thereof |
-
2021
- 2021-01-26 CN CN202110103065.9A patent/CN112909166B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206744A (en) * | 2015-08-18 | 2015-12-30 | 电子科技大学 | Flexible resistive random access memory of dual-layer film structure and manufacturing method for flexible resistive random access memory |
| WO2017157074A1 (en) * | 2016-03-18 | 2017-09-21 | 中国科学院微电子研究所 | Selector for use in bipolar resistive memory and manufacturing method for selector |
Non-Patent Citations (2)
| Title |
|---|
| "Electrochemical mechanism of ion current rectification of polyelectrolyte gel diodes";Tetsuya Yamamoto等;《Nature Communications》;20140617;第5卷;4146 * |
| "Polyelectrolyte Diode: Nonlinear Current Response of a Junction between Aqueous Ionic Gels";Olivier J. Cayre等;《Journal of the American Chemical Society》;20070811;第129卷(第35期);第10801-10802、10806页以及图1-2 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112909166A (en) | 2021-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Jiang et al. | Emerging synaptic devices: from two-terminal memristors to multiterminal neuromorphic transistors | |
| Wu et al. | Mimicking classical conditioning based on a single flexible memristor | |
| He et al. | Recent progress on emerging transistor‐based neuromorphic devices | |
| Yan et al. | Flexible transparent organic artificial synapse based on the tungsten/egg albumen/indium tin oxide/polyethylene terephthalate memristor | |
| Wan et al. | Emerging artificial synaptic devices for neuromorphic computing | |
| Zhang et al. | Recent progress in photonic synapses for neuromorphic systems | |
| Sun et al. | Flexible artificial sensory systems based on neuromorphic devices | |
| Ling et al. | Electrolyte-gated transistors for synaptic electronics, neuromorphic computing, and adaptable biointerfacing | |
| Yu et al. | Ionotronic neuromorphic devices for bionic neural network applications | |
| Xiao et al. | Energy‐efficient hybrid perovskite memristors and synaptic devices | |
| Rahmani et al. | Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application | |
| Wang et al. | Thin-film transistors for emerging neuromorphic electronics: Fundamentals, materials, and pattern recognition | |
| Matsukatova et al. | Combination of organic‐based reservoir computing and spiking neuromorphic systems for a robust and efficient pattern classification | |
| Huang et al. | Electrolyte-gated transistors for neuromorphic applications | |
| Ismail et al. | Neuromorphic synapses with high switching uniformity and multilevel memory storage enabled through a Hf-Al-O alloy for artificial intelligence | |
| Mahalanabis et al. | Incremental resistance programming of programmable metallization cells for use as electronic synapses | |
| Campbell et al. | Pulse shape and timing dependence on the spike-timing dependent plasticity response of ion-conducting memristors as synapses | |
| CN109787592B (en) | Random nerve pulse generator | |
| Bhunia et al. | Neural-inspired artificial synapses based on low-voltage operated organic electrochemical transistors | |
| Sun et al. | Advanced synaptic devices and their applications in biomimetic sensory neural system | |
| Zhong et al. | High-performance synaptic transistors for neuromorphic computing | |
| Khan et al. | Multistate resistive switching with self-rectifying behavior and synaptic characteristics in a solution-processed ZnO/PTAA bilayer memristor | |
| CN112909166B (en) | Nerve synapse bionic device based on polyelectrolyte double-layer structure | |
| Li et al. | Multifunctional analog resistance switching of Si3N4-based memristors through migration of Ag+ ions and formation of Si-dangling bonds | |
| Yamamoto | Polymer‐based neuromorphic devices: resistive switches and organic electrochemical transistors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |