CN112909166A - Nerve synapse bionic device based on polyelectrolyte double-layer structure - Google Patents
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- 229920000867 polyelectrolyte Polymers 0.000 title claims abstract description 46
- 239000011664 nicotinic acid Substances 0.000 title claims abstract description 20
- 210000000225 synapse Anatomy 0.000 title abstract description 23
- 210000005036 nerve Anatomy 0.000 title abstract description 17
- 239000005518 polymer electrolyte Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000003592 biomimetic effect Effects 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- MAGFQRLKWCCTQJ-UHFFFAOYSA-N 4-ethenylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-N 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 229920002518 Polyallylamine hydrochloride Polymers 0.000 claims description 2
- 229920002873 Polyethylenimine Polymers 0.000 claims description 2
- 229920002125 Sokalan® Polymers 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 8
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- 125000002091 cationic group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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Abstract
The invention discloses a nerve synapse bionic device based on a polyelectrolyte double-layer structure. The bionic device comprises: the double-layer structure film comprises a lower electrode layer, a positive charge polyelectrolyte layer with positive charge groups on the main chain, and a negative charge polyelectrolyte layer with negative charge groups on the main chain, wherein the positive charge polyelectrolyte layer is prepared on the lower electrode layer; the lower electrode layer comprises a substrate and a first electrode layer positioned above the substrate; the upper electrode layer is the second electrode layer; the positive and negative charge polymer electrolyte films are prepared by a spin coating method. The nerve synapse bionic device has the advantages of simple and rapid preparation method, low price of used materials, no pollution, capability of being prepared on a flexible substrate, capability of being prepared into a transparent device, capability of efficiently simulating nerve synapse function, plasticity and the like.
Description
Technical Field
The invention relates to the technical field of synapse bionic devices, in particular to a neurosynapse bionic device based on a polyelectrolyte double-layer structure.
Background
Because of the high efficiency of human brain work, neurosynaptic simulation, the first important stage of the physical hierarchy of brain work, is receiving increasing attention. The nerve synapse is an important site for contact and transmission of information between neurons. The learning and memory functions of biological systems are based on the precise control of ion flux between neurons and synapses. Binding of neurotransmitters to receptors on the posterior membrane alters receptor conformation, which results in a corresponding change in postsynaptic membrane potential, which is transmitted by presynaptic neurons to the postsynaptic neurons for stimulation or inhibition. Synapses change under the stimulation of a certain electrical signal, so that the effect of enhancing or weakening the connection strength between neurons is achieved, and the neurons have plasticity.
Biological synapse-like bionic electrons are developed on the basis of the research on two-terminal devices. The appearance of memristors and the synaptic-like multi-resistance state performance of the memristors have attracted attention from the 2008. Memristors can be roughly classified into a conductive filament type (filament type), an interface type (interface type) and a bulk type (bulk type) according to the working mechanism of a device, the area of a switch and the structural shape. Depending on the type of particles that the memristor migrates in operation, there are again a cationic device, an anionic device, and a bi-ionic device. However, the relatively simplistic device structure of two-terminal devices such as memristors often presents significant challenges in selecting appropriate active layer materials and stimulus signal settings and discussing device operating mechanisms. Therefore, a memristor device which is simple in material, reasonable in structure and clear in working mechanism is needed to be applied to biological synapse-like bionic research.
Disclosure of Invention
The invention aims to provide a novel nerve synapse bionic device which is simple in material, reasonable in structure and clear in working mechanism aiming at the difficulty of selecting an active layer material and a stimulation signal design of a nerve synapse bionic device based on a memristor at the present stage and the uncertainty of the working principle of the device, so that the resistance state of a material system can be accurately controlled through an accurate stimulation signal, and further, the nerve synapse function can be efficiently simulated and the device has plasticity.
In order to achieve the purpose, the invention provides the following scheme:
a polymer electrolyte double-layer structure-based nerve synapse bionic device comprises: the electrode comprises a lower electrode layer, a polyelectrolyte double-layer film layer (comprising a positive charge polyelectrolyte layer and a negative charge polyelectrolyte layer, the upper position and the lower position of the positive charge polyelectrolyte layer and the negative charge polyelectrolyte layer can be interchanged) prepared on the lower electrode layer and an upper electrode layer positioned above the polyelectrolyte double-layer film layer;
the lower electrode layer comprises a substrate and a first electrode layer positioned above the substrate; the upper electrode layer is the second electrode layer.
Optionally, the positive charge polyelectrolyte layer includes one of polyelectrolyte polyethyleneimine, polyallylamine hydrochloride, or polydimethyldiallylammonium chloride with a positive charge group on a main chain.
Optionally, the negatively charged polyelectrolyte layer includes one of polyelectrolyte polyacrylic acid or poly 4-styrenesulfonic acid having a negatively charged group on a main chain.
Alternatively, the substrate may be a silicon wafer, glass, PET, PI, or other common substrate.
Optionally, the thicknesses of the lower electrode layer and the upper electrode layer are both 50-500 nm.
Optionally, the thickness of the polyelectrolyte double-layer film layer is 3-20 nm (wherein, the thickness of the polyelectrolyte layer with positive charges and negative charges is 1-10 nm).
Advantages and advantageous effects of the invention
The invention provides a nerve synapse bionic device based on a polyelectrolyte double-layer structure. The invention takes a positive polyelectrolyte double layer and a negative polyelectrolyte double layer as a resistance change functional layer, and an electric field potential barrier generated by charge separation appears at the interface of a positive polyelectrolyte layer and a negative polyelectrolyte layer. Under the action of applied voltage, the migration phenomenon of the main chain of the polymer electrolyte is caused by the movement of the counter ions and the positive and negative charge groups in the polymer electrolyte layer, so that the potential barrier of the interface electric field is changed to generate the resistance state change of the functional layer. The phenomenon can simulate the characteristics of biological synapses, and the high-resistance state and the low-resistance state of the synapses slowly change and have stable ranges; a plurality of stable resistance states appear and have good retention characteristics, and when electric pulse stimulation is repeatedly applied, the resistance can excellently and repeatedly carry out high-low resistance conversion; the resistance function layer structure of the system is accurately controlled through an electric field to regulate and control the resistance state of the material, so that the nerve synapse function can be efficiently simulated, and plasticity is realized; simple manufacturing process, stable performance and wide application prospect.
Drawings
FIG. 1 is a schematic structural diagram of a polymer electrolyte double-layer structure-based neurosynaptic biomimetic device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the structure of the polyelectrolyte double-layer thin film layer in two states of low resistance and high resistance according to the embodiment of the present invention.
FIG. 3 is a graph showing actually measured I-V curves of a device fabricated by using an ITO transparent electrode as an electrode layer according to an embodiment of the present invention.
FIG. 4 is a graph of low resistance value versus read time actually measured for a device fabricated using ITO transparent electrodes as electrode layers according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Fig. 1 is a schematic structural diagram of a neurosynaptic biomimetic device based on a polyelectrolyte double-layer structure according to an embodiment of the present invention.
Referring to fig. 1, the polyelectrolyte-based neurosynaptic biomimetic device of an embodiment includes: a lower electrode layer 3, a polyelectrolyte double-layer thin film layer 2 deposited on the lower electrode layer 3, and an upper electrode layer 1 positioned above the polyelectrolyte double-layer thin film layer 2; the lower electrode layer 3 comprises a substrate 3-2 and a first electrode layer 3-1 positioned above the substrate 3-2; the upper electrode layer 1 is a second electrode layer; the polyelectrolyte double-layer thin film layer 2 comprises a positive charge polyelectrolyte layer 2-2 positioned above the lower electrode layer 3 and a negative charge polyelectrolyte layer 2-1 positioned above the positive charge polyelectrolyte layer 2-2.
As an alternative embodiment, the substrate is one of silicon wafer, glass, PET or PI, and other common substrates.
As an alternative embodiment, the thickness of the lower electrode layer 3 and the thickness of the upper electrode layer 1 are both 50-500 nm.
As an optional embodiment, the thickness of the polyelectrolyte double-layer thin film layer 2 is 3-20 nm.
The principle of the present embodiment of the neurosynaptic biomimetic device based on the polyelectrolyte double-layer structure is as follows:
when the polyelectrolyte double-layer structure is formed, a depletion layer is formed between double-layer contact interfaces and potential barriers are generated to prevent ions from moving, so that a high-resistance state is formed; after electrifying, under the action of an electric field, a polymer chain between the double-layer interfaces of the polymer electrolyte moves to eliminate a depletion layer, so that a low-resistance state is formed. On the basis, the polyelectrolyte chain can be restored to the initial state under the action of the opposite electric field to form a depletion layer, so that the resistance is changed into a high-resistance state. As shown in fig. 2, part (a) in fig. 2 is a high resistance state diagram in a state where a depletion layer exists, and part (b) in fig. 2 is a low resistance state diagram in a state where the depletion layer disappears. Under the action of an electric field, the bionic device is converted from a high-resistance state to a low-resistance state (shown as the change of an I-V curve in fig. 3), and the high-resistance state and the low-resistance state have long-term sustainability (shown as fig. 4). The state is equivalent to a '1' state and a '0' state in the computer, and the computer adopts a '0' and a '1' to form codes to store information to realize the storage function. This process is very similar to the behavior of neurotransmitters in synapses, and therefore the neurosynaptic biomimetic device can mimic the plasticity of neurons.
The polymer electrolyte double-layer structure-based neurosynaptic bionic device has the following advantages:
the polymer electrolyte is an organic chemical material with low price, no pollution and extremely high controllability, and has potential application in microelectronics, optics and other aspects. In the embodiment, the polyelectrolyte double-layer film is used as a resistance change functional layer, and can simulate the characteristics of biological synapses under the action of an electric field, and the high-resistance state and the low-resistance state of the polyelectrolyte double-layer film slowly change and have a stable range; a plurality of stable resistance states appear and have good retention characteristics, and when electric pulse stimulation is repeatedly applied, the resistance can excellently and repeatedly carry out high-low resistance conversion; the nerve synapse device has the advantages of simple structure, flexibility, transparency and the like, so that the nerve synapse bionic device is close to artificial nerves; the response of the human body to the outside depends on the electronic signal transmission of a nervous system in the human body, the nervous system is damaged to be equivalent to an incomplete circuit, no way is available for electrifying, and the nerve synapse bionic device is expected to serve as a lead, so that the nerve synapse bionic device has important significance in the field of biomedicine; the method can powerfully promote scientists to construct an efficient and exquisite brain bionic computer, and improve the efficiency of simulating the human brain by the computer; the device has the advantages of simple manufacturing process, stable performance and wide application prospect.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (9)
1. A polymer electrolyte double-layer structure-based neurosynaptic bionic device is characterized by comprising: the electrode comprises a lower electrode layer, a polyelectrolyte double-layer thin film layer deposited on the lower electrode layer and an upper electrode layer above the polyelectrolyte double-layer thin film layer; the lower electrode layer comprises a substrate and a first electrode layer positioned above the substrate; the upper electrode layer is the second electrode layer.
2. The polymer electrolyte bilayer structure-based neurosynaptic biomimetic device according to claim 1, wherein the substrate is a common substrate including but not limited to silicon wafer, glass, PET or PI.
3. The polymer electrolyte bilayer structure-based neurosynaptic biomimetic device according to claim 1, wherein the film thickness of the lower electrode layer and the upper electrode layer is 50-500 nm.
4. The polymer electrolyte bilayer structure-based neurosynaptic biomimetic device according to claim 1, wherein the polymer electrolyte bilayer thin film layer comprises a negatively charged polymer electrolyte layer and a positively charged polymer electrolyte layer.
5. The polymer electrolyte bilayer structure-based neurosynaptic biomimetic device according to claim 4, wherein the positively charged polymer electrolyte layer is a polymer electrolyte with a main chain having a positively charged group, including but not limited to one of polyethyleneimine, polyallylamine hydrochloride or polydimethyldiallylammonium chloride.
6. The device of claim 4, wherein the negatively charged polyelectrolyte layer is a polyelectrolyte with negatively charged groups on the main chain, including but not limited to polyacrylic acid or poly-4-styrenesulfonic acid.
7. The polymer electrolyte double-layer structure-based neurosynaptic biomimetic device according to claim 5, wherein the thickness of the positive charge polymer electrolyte layer is 1-10 nm.
8. The polymer electrolyte bilayer structure-based neurosynaptic biomimetic device according to claim 6, wherein the film thickness of the negatively charged polymer electrolyte layer is 1-10 nm.
9. The device of claim 5, wherein the positions of the positive charge polyelectrolyte layer and the negative charge polyelectrolyte layer in the polyelectrolyte bilayer thin film layer structure can be interchanged.
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