CN107681048A - A kind of memristor and preparation method and application with neurobionics function - Google Patents
A kind of memristor and preparation method and application with neurobionics function Download PDFInfo
- Publication number
- CN107681048A CN107681048A CN201710777067.XA CN201710777067A CN107681048A CN 107681048 A CN107681048 A CN 107681048A CN 201710777067 A CN201710777067 A CN 201710777067A CN 107681048 A CN107681048 A CN 107681048A
- Authority
- CN
- China
- Prior art keywords
- zirconium hafnium
- film layer
- memristor
- electrode layers
- neurobionics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
Abstract
The invention discloses a kind of memristor with neurobionics function, its structure includes substrate, the Ag bottom electrode layers formed over the substrate, the functional layer formed on the Ag bottom electrode layers and the Ag top electrode layers formed in the functional layer successively from top to bottom；The functional layer includes the first zirconium hafnium oxygen film layer, graphene oxide quantum dot intermediate layer and the second zirconium hafnium oxygen film layer successively from top to bottom.Meanwhile the invention also discloses the preparation method and application of the memristor.The design that the present invention passes through specific structure so that the memristor finally prepared has good neurobionics effect；Especially graphene oxide quantum dot intermediate layer is arranged between the first zirconium hafnium oxygen film layer and the second zirconium hafnium oxygen film layer in functional layer, this accurately controls the growth of conductive filament and rupture to improve the homogeneity of device, and the more existing same type device of device can be made to have more stable change in resistance, lower power consumption, more preferable stability and homogeneity.
Description
Technical field
It is specifically a kind of that there is neurobionics function the present invention relates to a kind of memristor and its preparation method and application
Memristor and preparation method and application.
Background technology
Memristor is another new passive electric circuit element after relay resistance, electric capacity, inductance.Briefly, memristor
An exactly nonlinear resistor for having memory function, is a kind of two terminal device, belongs to and is typically based on summit pole-dielectric layer-
The sandwich structure of hearth electrode, therefore can be with High Density Integration.Its operation principle is mainly using middle dielectric layer in different electricity
Occur the reversible transition phenomenon between high and low resistance state in the presence of excitation to carry out the storage of data, that is, pass through control electric current
Change changes its resistance, if high value is defined as " 1 ", low resistance is defined as " 0 ", then this resistance can realizes storage
The function of data.With common water pipe come to liken its operation principle be exactly that electric current is the water that passes through, and resistance is water pipe
During thickness, when water flows through from a direction, water pipe can be increasingly thicker with water-carrying capacity, at this moment if current are turned off
Words, the thickness of water pipe can remain unchanged；Otherwise when water flows the other way around, water pipe will be increasingly thinner, and just because of
The magnitude of current before the device meeting " remembeing ", therefore it is referred to as memristor.
In 2008, after the researcher of HP Lab has made first memory resistor, scientific circles were started to recalling
Hinder the research boom of device.Memristor has with it changes that fast, access speed is fast and CMOS between simple in construction, different Resistance states
Process compatible, low-power consumption, the advantage such as it is easily integrated, is considered as one of strong candidate of high-density storage of future generation.Memristor
The simplest application of device is exactly as non-volatile impedance memory, and with going deep into for research, researcher has found that it can be with
For carrying out logical calculated.In 2010, HP Lab announced again, and memristor has the function of boolean calculation, this
One finds to have shaken computer educational circles.Once the National University of Defense technology scientific research personnel for the heading the list of signers to develop " Milky Way " series super computer exists
Think after Tracking investigation " now all of Digital Logical Circuits can be substituted completely by memristor in theory ".In addition, research
Personnel have also developed another new application of memristor, exactly bionical for carrying out nerve synapse.But currently available technology
In have nerve synapse bionic function memristor it is fewer, need further to develop.In addition, no matter memristor is applied to
Memory or logical calculated or nerve synapse are bionical, it is necessary to meet higher performance and relatively low power consumption, and it is existing at present
The defects of memristor generally existing resistance change is small, operating voltage is high, and power consumption is big.
The content of the invention
It is an object of the invention to provide a kind of memristor and preparation method and application with neurobionics function, with solution
The problem of certainly existing memristor generally existing resistance change is small, operating voltage is high, and power consumption is big.
The purpose of the present invention is achieved through the following technical solutions：A kind of memristor with neurobionics function, bag
Its structure is included from top to bottom successively including substrate, the Ag bottom electrode layers formed over the substrate, on the Ag bottom electrode layers
The functional layer of formation and the Ag top electrode layers formed in the functional layer；The functional layer includes first successively from top to bottom
Zirconium hafnium oxygen film layer, graphene oxide quantum dot intermediate layer and the second zirconium hafnium oxygen film layer.
The substrate is Pt/Ti/SiO2/ Si substrates, the Pt/Ti/SiO2Bottommost is Si film layers in/Si substrates, SiO2
Coating growth is in Si film layers, and Ti coating growths are in SiO2In film layer, Pt coating growths are in Ti film layers, and therefore, Pt film layers are
Pt/Ti/SiO2The top of/Si substrates；The functional layer is formed at the Pt/Ti/SiO2In the Pt film layers of/Si substrates.
The thickness of the functional layer is 10-20nm, the thickness in the graphene oxide quantum dot intermediate layer in the functional layer
Spend for 0.8-1.2nm, the thickness of the first zirconium hafnium oxygen film layer and the second zirconium hafnium oxygen film layer is preferably identical.
The thickness of the Ag bottom electrode layers is 5-15nm.
The thickness of the Ag top electrode layers is 50-200nm, and the Ag top electrode layers are some a diameter of 50-150 μm of circles
Shape electrode film.
The graphene oxide quantum dot intermediate layer is to be prepared by the following method：
（1）The preparation method of graphene oxide quantum dot solution is：Concentration is water-based for 0.5mg/mL graphene oxide
The hydrogenperoxide steam generator that suspension and concentration are 30 wt% is 40 by volume:1 mixing, obtains mixed liquor, even under Hg lamp irradiation
Speed stirring 30-40min, is dialysed 2.5-3.5 days to the mixed liquor with 3500 Da bag filter, produced；
（2）The sample for forming the first zirconium hafnium oxygen film layer is placed on the rotating disk of sol evenning machine, with dropper by the graphene oxide
Quantum dot solution be added dropwise it is even is coated in the first zirconium hafnium oxygen film layer, be then turned on sol evenning machine, the r/min of rotating speed 3000 be set, during rotation
Between be 5-15min, after spin coating is uniform, dry, i.e., formd in the first zirconium hafnium oxygen film layer among graphene oxide quantum dot
Layer.
The invention also discloses the preparation method of the memristor with neurobionics function, comprise the following steps：
（a）By Pt/Ti/SiO2/ Si substrates are cleaned in acetone, alcohol and deionized water with ultrasonic wave respectively successively, Ran Houqu
Go out to use N2Drying；
（b）By cleaned Pt/Ti/SiO2/ Si substrates are fixed on the substrate table of magnetron sputtering apparatus, by Ag targets and zirconium hafnium
Oxygen target is individually positioned on two target platforms；Cavity is evacuated to 1 × 10-4-4×10-4Pa, 20- is passed through into cavity
30sccm Ar, adjust the pressure in cavity and maintain 1-6Pa, open the DC source of control Ag target build-ups of luminance, adjust DC source
Power is 8-11W, makes Ag target build-ups of luminance, pre-sputtering 4-6min；Formal sputtering 1-4min, in Pt/Ti/SiO2The Pt of/Si substrates
Ag bottom electrode layers are formed in film layer；
（c）The DC source of Ag target build-ups of luminance is closed, cavity is evacuated to 1 × 10-4-4×10-4Pa；Flow is passed through into cavity
Than for 50-70sccm:20-30sccm Ar and O2, adjust the pressure in cavity and maintain 1-6Pa, open control zirconium hafnium oxygen
The radio frequency source of target build-up of luminance, adjustment RF source power are 70-90W, make zirconium hafnium oxygen target build-up of luminance, pre-sputtering 8-15min；Formally splash
35-45min is penetrated, the first zirconium hafnium oxygen film layer is formed on Ag bottom electrode layers；
（d）The radio frequency source of closing control zirconium hafnium oxygen target build-up of luminance, the sample for forming the first zirconium hafnium oxygen film layer is placed on sol evenning machine
On rotating disk, with dropper by graphene oxide quantum dot solution be added dropwise it is even be coated in the first zirconium hafnium oxygen film layer, open sol evenning machine, if
The r/min of rotating speed 3000 is put, rotational time 5-15min, after spin coating is uniform, is dried, stone is formd in the first zirconium hafnium oxygen film layer
Black olefinic oxide quantum dot intermediate layer；
（e）After being dried after graphene oxide quantum dot intermediate layer, then by sample be fixed to magnetron sputtering apparatus substrate table on,
And cavity is evacuated to 1 × 10-4-4×10-4Pa, repeat step（c）The magnetron sputtering technique of the first zirconium hafnium oxygen film layer is formed,
The second zirconium hafnium oxygen film layer is formd on graphene oxide quantum dot intermediate layer；
（f）Mask plate is placed in the second zirconium hafnium oxygen film layer of sample, magnetron sputtering apparatus cavity is evacuated to 1 × 10-4-4
×10-4Pa, Ag targets in the second zirconium hafnium oxygen film layer are formd into Ag top electrode layers by magnetron sputtering method.
Step in preparation method of the present invention（b）The thickness of described Ag bottom electrode layers is 5-15nm.
Step in preparation method of the present invention（d）The preparation method of the graphene oxide quantum dot solution is：By concentration
The hydrogenperoxide steam generator that graphene oxide waterborne suspension and concentration for 0.5mg/mL are 30 wt% is 40 by volume:1
Mixing, obtains mixed liquor, under Hg lamp irradiation, at the uniform velocity stirs 30-40min, the mixed liquor is dialysed with 3500 Da bag filter
2.5-3.5 my god, produce.
Step in preparation method of the present invention（d）The thickness in the graphene oxide quantum dot intermediate layer of formation is 0.8-
1.2nm。
Step in preparation method of the present invention（f）A diameter of 50-150 μm of circular port is evenly equipped with described mask plate.
Step（f）The magnetron sputtering technique refers to：The Ar that flow is 20sccm-30sccm, adjustment are passed through into cavity
Interface valve makes the pressure in cavity maintain 1-6Pa, opens the DC source for controlling silver-colored target build-up of luminance, adjustment direct current source power is 8-
11W, make silver-colored target build-up of luminance, pre-sputtering 4-6min；Formal sputtering 10-20min afterwards, Ag is formd in the second zirconium hafnium oxygen film layer
Top electrode layer.
Step（f）The thickness of described Ag top electrode layers is 50-200nm；The Ag top electrode layers are some a diameter of 50-
150 μm of circular electrode film.
The design that the present invention passes through substrate, Ag bottom electrode layers, particular functional layer and Ag top electrode layer structures so that final system
Standby memristor has good neurobionics effect；Especially in the first zirconium hafnium oxygen film layer and the second zirconium hafnium oxygen film of functional layer
Graphene oxide quantum dot intermediate layer is provided between layer, this accurately controls the growth of conductive filament and rupture to improve device
The homogeneity of part, it can make the more existing same type device of device that there is more stable change in resistance, lower power consumption, preferably steady
Qualitative and homogeneity, and show that memristor operating voltage provided by the invention is low by detection, resistance change is big, and this is very big
Lifting memristor integrated application performance；And the preparation method of memristor provided by the invention is simple, good operability, easily
In mass production, have broad application prospects.
Brief description of the drawings
Fig. 1 is the structural representation of memristor provided by the present invention.
Fig. 2 is the structural representation for the magnetron sputtering apparatus that the present invention prepares memristor.
Fig. 3 is the neurobionics simulation drawing of the direct impulse effect of the memristor prepared by the embodiment of the present invention 2.
Fig. 4 is the neurobionics simulation drawing of the negative-going pulse effect of the memristor prepared by the embodiment of the present invention 2.
Fig. 5 is the nerve synapse weight change modeling figure of the memristor prepared by the embodiment of the present invention 2.
Fig. 6 semi-conductor test instruments carry out forward current voltage scanning result figure to the memristor prepared by embodiment 2.
Fig. 7 semi-conductor test instruments carry out negative current voltage scanning result figure to the memristor prepared by embodiment 2.
Embodiment
Example below is used to the present invention be further described, but the invention is not limited in any way.
Embodiment 1
As shown in figure 1, the memristor provided by the invention with neurobionics function, its structure include Pt/ successively from top to bottom
Ti/SiO2/ Si substrates 1, in Pt/Ti/SiO2The Ag bottom electrode layers 2 that are formed in the Pt film layers of/Si substrates 1, in Ag bottom electrode layers 2
The functional layer 3 of upper formation and the Ag top electrode layers 4 formed in functional layer 3.Wherein functional layer 3 includes the successively from top to bottom
One zirconium hafnium oxygen film layer 31, graphene oxide quantum dot intermediate layer 32 and the second zirconium hafnium oxygen film layer 33.Wherein Pt/Ti/SiO2/
Bottommost is Si film layers in Si substrates 1, is SiO in Si film layers2Film layer, SiO2It is Ti film layers in film layer, is Pt films in Ti film layers
Layer, therefore, Pt film layers are Pt/Ti/SiO2The top of/Si substrates 1.
The thickness of its functional layer 3 is 10-20nm, and wherein the thickness in graphene oxide quantum dot intermediate layer 32 is 0.8-
1.2nm, preferably 1nm；The thickness of its first zirconium hafnium oxygen film layer 31 and the second zirconium hafnium oxygen film layer 33 is preferably identical.
The thickness of its Ag bottom electrode layer 2 is 5-15nm, and the thickness of Ag top electrode layers 4 is 50-200nm, and Ag top electrode layers 4 are wrapped
Include some a diameter of 50-150 μm of circular electrodes being evenly distributed in functional layer 3.
The above-mentioned memristor with neurobionics function can by following preparation method in the range of adjusting process parameter
It is prepared, specifically includes following steps：
（1）By Pt/Ti/SiO2/ Si substrates 1 are placed in the beaker for filling acetone, and 10min is cleaned with ultrasonic wave, are then placed in Sheng
10min is cleaned with ultrasonic wave in spirituous beaker, then takes out to be put into the beaker for fill deionized water with clip and uses ultrasonic wave
5min is cleaned, takes out afterwards, uses nitrogen（N2）Drying.
（2）As shown in Fig. 2 opening the cavity 4 of magnetron sputtering apparatus, tabletting platform 7 is taken out, is first polished totally to hair with sand paper
It is bright, the organic matter of tabletting platform surface attachment is cleaned with acetone, with the last wiped clean of alcohol；By cleaned Pt/Ti/SiO2/
Si substrates 1 are placed on tabletting on tabletting platform 7, ensure Pt/Ti/SiO during tabletting2/ Si substrates 1 are firm to be pressed on tabletting platform 7 and presses
Flat, growing film is uniform when being sputtered with guarantee, puts it into after tabletting on the substrate table 8 in cavity 4, is closed after fixing
Cavity 4,1 × 10 is evacuated to cavity 4 and gas circuit-4-4×10-4Pa；The lower section of tabletting platform 7 is provided with two in cavity 4
Target platform 6, different targets 11, respectively zirconium hafnium oxygen are placed with respectively on target platform 6（Zr0.5Hf0.5O2, it is abbreviated as ZHO）Target and
Silver-colored target.Wherein zirconium hafnium oxygen target controls its build-up of luminance by the radio frequency source outside the cavity 4 of magnetron sputtering apparatus, and silver-colored target is by magnetic control
DC source outside the cavity 4 of sputtering equipment controls its build-up of luminance.Being provided with above silver-colored target can block to silver-colored target
First baffle, the Pt/Ti/SiO in the bottom surface of tabletting platform 72The lower section of/Si substrates 1 is provided with can be to Pt/Ti/SiO2/ Si substrates 1 enter
The second baffle that row blocks.First baffle and second baffle can be controlled by the corresponding button outside the cavity 4 of magnetron sputtering apparatus
Make its rotation.
First by second baffle by Pt/Ti/SiO2/ Si substrates 1 block, and are passed through afterwards by charge valve 5 into cavity 4
20-30sccm argon gas（Ar）, adjustment mechanical pump and molecular pump interface valve 10 make the pressure in cavity 4 maintain 1-6Pa, opened
The DC source of Ag targets is controlled, adjustment direct current source power is 8-11W, makes Ag target build-ups of luminance, pre-sputtering 4-6min；Pre-sputtering be for
Cleaning target material surface, so needed Pt/Ti/SiO during pre-sputtering2/ Si substrates 1 block, in order to avoid in Pt/Ti/SiO2/ Si is served as a contrast
Undesired film layer is formed on bottom 1；Second baffle, formal sputtering 1-4min, in Pt/Ti/SiO are opened afterwards2/ Si substrates 1
The Ag bottom electrode layers 2 that thickness is 5-15nm are formed in Pt film layers；
（3）The DC source of closing control Ag targets, Ag targets are blocked by the first plate washer, by second baffle by Pt/Ti/SiO2/Si
Substrate 1 is blocked, and cavity is evacuated into 1 × 10-4-4×10-4Pa；It is 50-70sccm that flow-rate ratio is passed through into cavity: 20-
30sccm Ar and O2, adjustment mechanical pump and molecular pump interface valve 10 make the pressure in cavity 4 maintain 1-6Pa, open control
The radio frequency source of zirconium hafnium oxygen target build-up of luminance, adjustment RF source power is 70-90W, makes zirconium hafnium oxygen target build-up of luminance, pre-sputtering 8-15min；
Pre-sputtering is in order to clean target material surface, so being needed Pt/Ti/SiO during pre-sputtering2/ Si substrates 1 block, in order to avoid in Pt/
Ti/SiO2Undesired film layer is formed on/Si substrates 1；Moved out from beneath after pre-sputtering by second baffle from substrate, formal sputtering
35-45min, the first zirconium hafnium oxygen film layer 31 is formed on the Ag bottom electrode layers 2 of sample；
（4）After forming the first zirconium hafnium oxygen film layer 31, the radio frequency source of closing control zirconium hafnium oxygen target build-up of luminance, sample is placed on sol evenning machine
Rotating disk on, with dropper by 5-10mL graphene oxides quantum dot solution be added dropwise it is even be coated in the first zirconium hafnium oxygen film layer, then
Sol evenning machine is opened, rotating speed 3000 r/min, rotational time 5-15min are set, after spin coating is uniform, graphene oxide will be covered with
The sample in quantum dot intermediate layer, which is placed under dry dustfree environment, to be dried, duration 5-10h, in the first zirconium hafnium oxygen film layer 31
Form the graphene oxide quantum dot intermediate layer 32 that thickness is 0.8-1.2nm；
（5）After being dried after graphene oxide quantum dot intermediate layer 32, then by sample be fixed to magnetron sputtering apparatus substrate table 8
On, second baffle is by Pt/Ti/SiO2/ Si substrates 1 are blocked, and 1 × 10 is evacuated to cavity-4-4×10-4Pa, then into cavity
It is 50-70sccm to be passed through flow-rate ratio:20-30sccm Ar and O2, adjustment mechanical pump and molecular pump interface valve 10 make in cavity 4
Pressure maintain 1-6Pa, open the radio frequency source of control zirconium hafnium oxygen target build-up of luminance, adjustment RF source power is 70-90W, makes zirconium
Hafnium oxygen target build-up of luminance, pre-sputtering 8-15min；Moved out from beneath after pre-sputtering by second baffle from substrate, formal sputtering 35-
45min, the second zirconium hafnium oxygen film layer 33 is formd on graphene oxide quantum dot intermediate layer 32；
（6）Radio frequency source is closed, by the pressure release of intake valve 9, the cavity 4 of magnetron sputtering apparatus is opened, in the second zirconium hafnium oxygen film layer 33
It is upper to place the mask plate for being uniformly densely covered with a diameter of 50-150 μm of circular hole, pass through mechanical pump and molecular pump interface valve 10 with vavuum pump
1 × 10 is evacuated to the cavity 4 of magnetron sputtering apparatus-4-4×10-4Pa, flow is passed through into cavity 4 with by charge valve 5
For 20sccm ~ 30sccm Ar, adjustment interface valve 10 makes the pressure in cavity maintain 1-6Pa；Sample is kept off by second baffle
Firmly, silver-colored target is blocked by first baffle；The DC source of control Ag target build-ups of luminance is opened, adjustment direct current source power is 8-11W, is made
Silver-colored target build-up of luminance in cavity 4, pre-sputtering 4-6min；First baffle and second baffle are removed afterwards, under the effect of silver-colored target just
Formula sputters 10-20min, and Ag top electrode layers 4 are formed in the second zirconium hafnium oxygen film layer 33；Ag top electrode layers 4 be some diameters with
Circular port identical circular electrode film on mask plate, and the size of effective working region of resistance-variable storing device, and pass through control
Growth rate processed and growth time, the thickness of Ag top electrode layers 4 is can control in the range of 50-200nm.
Embodiment 2
（1）By Pt/Ti/SiO2/ Si substrates 1 are placed in the beaker for filling acetone, and 10min is cleaned with ultrasonic wave, are then placed in Sheng
10min is cleaned with ultrasonic wave in spirituous beaker, then takes out to be put into the beaker for fill deionized water with clip and uses ultrasonic wave
5min is cleaned, takes out afterwards, uses nitrogen（N2）Drying.
（2）Using magnetron sputtering apparatus as shown in Figure 2, cavity 4 is opened, takes out tabletting platform 7, first polished totally extremely with sand paper
It is shinny, the organic matter of tabletting platform surface attachment is cleaned with acetone, with the last wiped clean of alcohol；By cleaned Pt/Ti/
SiO2/ Si substrates 1 are placed on tabletting on tabletting platform 7, ensure Pt/Ti/SiO during tabletting2/ Si substrates 1 are firm to be pressed on tabletting platform 7 simultaneously
And flatten, growing film is uniform when being sputtered with guarantee, puts it on the substrate table 8 in cavity 4, fixes after tabletting
Cavity 4 is closed afterwards, and 2 × 10 are evacuated to cavity 4 and gas circuit-4Pa；The lower section of tabletting platform 7 is provided with two targets in cavity 4
Platform 6, different targets 11, respectively zirconium hafnium oxygen are placed with respectively on target platform 6（Zr0.5Hf0.5O2, it is abbreviated as ZHO）Target and silver
Target.Wherein zirconium hafnium oxygen target controls its build-up of luminance by the radio frequency source outside the cavity 4 of magnetron sputtering apparatus, and silver-colored target is splashed by magnetic control
DC source outside the cavity 4 of jet device controls its build-up of luminance.It is provided with silver-colored target can be blocked above silver-colored target
First baffle, the Pt/Ti/SiO in the bottom surface of tabletting platform 72The lower section of/Si substrates 1 is provided with can be to Pt/Ti/SiO2/ Si substrates 1 are carried out
The second baffle blocked.First baffle and second baffle can be controlled by the corresponding button outside the cavity 4 of magnetron sputtering apparatus
It rotates.
First by second baffle by Pt/Ti/SiO2/ Si substrates 1 block, and are passed through afterwards by charge valve 5 into cavity 4
25sccm argon gas（Ar）, adjustment mechanical pump and molecular pump interface valve 10 make the pressure in cavity 4 maintain 3Pa, open control
The DC source of Ag targets, adjustment direct current source power is 10W, makes Ag target build-ups of luminance, pre-sputtering 5min；Pre-sputtering is to clean target
Material surface, so being needed Pt/Ti/SiO during pre-sputtering2/ Si substrates 1, in order to avoid in Pt/Ti/SiO2Formed and be not desired to on/Si substrates 1
The film layer wanted；Second baffle, formal sputtering 2min, in Pt/Ti/SiO are opened afterwards2Thickness is formed in the Pt film layers of/Si substrates 1
For 8nm Ag bottom electrode layers 2；
（3）The DC source of closing control Ag targets, Ag targets are blocked by the first plate washer, by second baffle by Pt/Ti/SiO2/Si
Substrate 1 is blocked, and cavity is evacuated into 2 × 10-4Pa；It is 50sccm that flow-rate ratio is passed through into cavity:25sccm Ar and O2,
Adjustment mechanical pump makes the pressure in cavity 4 maintain 3Pa with molecular pump interface valve 10, opens penetrating for control zirconium hafnium oxygen target build-up of luminance
Frequency source, adjustment RF source power are 80W, make zirconium hafnium oxygen target build-up of luminance, pre-sputtering 10min；Pre-sputtering is to clean target table
Face, so need to block substrate during pre-sputtering, in order to avoid undesired film layer is formed on substrate；By second baffle after pre-sputtering
From the moved out from beneath of substrate, formal sputtering 40min, the first zirconium hafnium oxygen that thickness is 7nm is formed on the Ag bottom electrode layers 2 of sample
Film layer 31；
（4）After forming the first zirconium hafnium oxygen film layer 31, the radio frequency source of closing control zirconium hafnium oxygen target build-up of luminance, sample is placed on sol evenning machine
Rotating disk on, with dropper by graphene oxide quantum dot solution be added dropwise it is even be coated in the first zirconium hafnium oxygen film layer, be then turned on even
Glue machine, rotating speed 3000 r/min, rotational time 10min are set, after spin coating is uniform, will be covered with graphene oxide quantum dot
The sample of interbed, which is placed under dry dustfree environment, to be dried, duration 5h, forms 1nm's in the first zirconium hafnium oxygen film layer 31
Graphene oxide quantum dot intermediate layer 32；
（5）After being dried after graphene oxide quantum dot intermediate layer 32, then by sample be fixed to magnetron sputtering apparatus substrate table 8
On, second baffle is by Pt/Ti/SiO2/ Si substrates 1 are blocked, and 2 × 10 are evacuated to cavity-4Pa, weight are passed through flow into cavity
Than for 50sccm:25sccm Ar and O2, adjust mechanical pump maintains the pressure in cavity 4 with molecular pump interface valve 10
3Pa, the radio frequency source of control zirconium hafnium oxygen target build-up of luminance is opened, adjustment RF source power is 70-90W, makes zirconium hafnium oxygen target build-up of luminance, in advance
Sputter 10min；Moved out from beneath after pre-sputtering by second baffle from substrate, formal sputtering 40min, in graphene oxide quantum
7nm the second zirconium hafnium oxygen film layer 33 is formd on point intermediate layer 32；
（6）Radio frequency source is closed, by the pressure release of intake valve 9, the cavity 4 of magnetron sputtering apparatus is opened, in the second zirconium hafnium oxygen film layer 33
Upper placement is uniformly densely covered with the mask plate of a diameter of 100 μm of circular holes, right by mechanical pump and molecular pump interface valve 10 with vavuum pump
The cavity 4 of magnetron sputtering apparatus is evacuated to 2 × 10-4Pa, it is 25sccm's with flow is passed through into cavity 4 by charge valve 5
Ar, adjustment interface valve 10 make the pressure in cavity maintain 3Pa；Sample is blocked by second baffle, by first baffle by silver-colored target
Material blocks；DC source is opened, adjustment direct current source power is 10W, makes the silver-colored target build-up of luminance in cavity 4, pre-sputtering 5min；Move afterwards
First baffle and second baffle are removed, the formal sputtering 15min under the effect of silver-colored target, Ag tops are formed in the second zirconium hafnium oxygen film layer 33
Electrode layer 4；Ag top electrode layers 4 are some diameters and the circular port identical circular electrode film on mask plate, and resistive are deposited
The size of effective working region of reservoir, and by Controlling Growth Rate and growth time, can control the thickness of Ag top electrode layers 4
In the range of 70-200nm.
The performance detection of the memristor of embodiment 3
（1）The nerve synapse analog functuion of device prepared to embodiment 2 is tested, shown in its result as Fig. 3 and Fig. 4.
Wherein Fig. 3 be it is continuous to device apply 15 circle 0.7v, 50ns pulsewidths square waves obtained by figure, it can be seen from the figure that, with arteries and veins
The increase of number is rushed, the electric current of device gradually increases, and resistance value is constantly reduced.Fig. 4 is 15 circle -0.7v of application continuous to device,
Figure obtained by the square wave of 50ns pulsewidths.It can be seen from the figure that, with the increase of umber of pulse, the electric current of device is gradually reduced, electricity
Resistance is continuously increased.By Fig. 3 and Fig. 4, the resistance for illustrating memory resistor is adjustable, and with good neurobionics effect
Fruit.
（2）Pairing pulse in biological synapse promotes（PPF）It is by reducing the time between two continuous intensifier pulses
Interval enhancing cynapse weight.This experiment by the use of pulsewidth be 120ns, amplitude 0.8v pulse signal as input pulse, be with pulsewidth
100ns, amplitude 0.2v pulse signal are as reading pulse.Each one reading pulse of input pulse heel.Two input arteries and veins
Interval between punching is referred to as △ t.Its variation relation result is shown in Fig. 5, as seen from Figure 5 as the interval between input pulse subtracts
Small, cynapse weight is continuously increased.This phenomenon can carry out the imitation of neural study, and positive input pulse can represent twice twice
Study, the interval of learning time is smaller twice, shows that the speed that brain is forgotten will slow down.
（3）Current Voltage test has been carried out to device with keithley2400 semi-conductor test instruments, has as a result seen Fig. 6 and figure
7.In forward scan, starting point voltage 0V is chosen, maximum scan voltage is 0.2V, step-length 0.01V.It has been carried out continuously six times
Scanning, it is as shown in Figure 6 to obtain I-V diagram.As can be seen that with the increase of scanning times, the electric current of device is continuously increased, and resistance is not
It is disconnected to diminish.Then We conducted negative sense scanning, starting point voltage 0V is chosen, minimum scanning voltage is -0.2V, step-length 0.01V.
Six scanning has been carried out continuously, it is as shown in Figure 7 to obtain I-V diagram.As can be seen that with the increase of scanning times, the electric current of device
Constantly reduce, resistance constantly becomes big.By the way that to continuously scanning obtained I-V diagram, the resistance for illustrating device is continuously adjustabe,
With typical memristor characteristic.And the peak value of scanning voltage is positive and negative 0.2V, illustrate to realize that resistance regulates and controls required voltage
Very little, meet requirement of the modern electronic devices to low-power consumption.
Claims (10)
1. a kind of memristor with neurobionics function, it is characterised in that its structure includes substrate, in institute successively from top to bottom
State the Ag bottom electrode layers formed on substrate, the functional layer formed on the Ag bottom electrode layers and formed in the functional layer
Ag top electrode layers；The functional layer includes the first zirconium hafnium oxygen film layer, among graphene oxide quantum dot successively from top to bottom
Layer and the second zirconium hafnium oxygen film layer.
2. the memristor according to claim 1 with neurobionics function, it is characterised in that the thickness of the functional layer
For 10-20nm, the thickness in the graphene oxide quantum dot intermediate layer in the functional layer is 0.8-1.2nm.
3. the memristor according to claim 1 with neurobionics function, it is characterised in that the Ag bottom electrode layers
Thickness be 5-15nm.
4. the memristor according to claim 1 with neurobionics function, it is characterised in that the Ag top electrode layers
Thickness is 50-200nm.
5. a kind of preparation method of the memristor with neurobionics function, it is characterised in that comprise the following steps：
（a）By Pt/Ti/SiO2/ Si substrates are cleaned in acetone, alcohol and deionized water with ultrasonic wave respectively successively, are then taken out
Use N2Drying；
（b）By cleaned Pt/Ti/SiO2/ Si substrates are fixed on the substrate table of magnetron sputtering apparatus, by Ag targets and zirconium hafnium
Oxygen target is individually positioned on two target platforms；Cavity is evacuated to 1 × 10-4-4×10-4Pa, 20- is passed through into cavity
30sccm Ar, adjust the pressure in cavity and maintain 1-6Pa, open the DC source of control Ag target build-ups of luminance, adjust DC source
Power is 8-11W, makes Ag target build-ups of luminance, pre-sputtering 4-6min；Formal sputtering 1-4min, in Pt/Ti/SiO2The Pt of/Si substrates
Ag bottom electrode layers are formed in film layer；
（c）The DC source of Ag target build-ups of luminance is closed, cavity is evacuated to 1 × 10-4-4×10-4Pa；Flow is passed through into cavity
Than for 50-70sccm:20-30sccm Ar and O2, adjust the pressure in cavity and maintain 1-6Pa, open control zirconium hafnium oxygen
The radio frequency source of target build-up of luminance, adjustment RF source power are 70-90W, make zirconium hafnium oxygen target build-up of luminance, pre-sputtering 8-15min；Formally splash
35-45min is penetrated, the first zirconium hafnium oxygen film layer is formed on Ag bottom electrode layers；
（d）The radio frequency source of closing control zirconium hafnium oxygen target build-up of luminance, the sample for forming the first zirconium hafnium oxygen film layer is placed on sol evenning machine
On rotating disk, with dropper by graphene oxide quantum dot solution be added dropwise it is even be coated in the first zirconium hafnium oxygen film layer, open sol evenning machine, if
The r/min of rotating speed 3000 is put, rotational time 5-15min, after spin coating is uniform, is dried, stone is formd in the first zirconium hafnium oxygen film layer
Black olefinic oxide quantum dot intermediate layer；
（e）After being dried after graphene oxide quantum dot intermediate layer, then by sample be fixed to magnetron sputtering apparatus substrate table on,
And cavity is evacuated to 1 × 10-4-4×10-4Pa, repeat step（c）The magnetron sputtering technique of the first zirconium hafnium oxygen film layer is formed,
The second zirconium hafnium oxygen film layer is formd on graphene oxide quantum dot intermediate layer；
（f）Mask plate is placed in the second zirconium hafnium oxygen film layer of sample, magnetron sputtering apparatus cavity is evacuated to 1 × 10-4-4
×10-4Pa, Ag targets in the second zirconium hafnium oxygen film layer are formd into Ag top electrode layers by magnetron sputtering method.
6. the preparation method of the memristor according to claim 5 with neurobionics function, it is characterised in that step
（d）The preparation method of the graphene oxide quantum dot solution is：Concentration is water-based for 0.5mg/mL graphene oxide
The hydrogenperoxide steam generator that suspension and concentration are 30 wt% is 40 by volume:1 mixing, obtains mixed liquor, even under Hg lamp irradiation
Speed stirring 30-40min, is dialysed 2.5-3.5 days to the mixed liquor with 3500 Da bag filter, produced.
7. the preparation method of the memristor according to claim 5 with neurobionics function, it is characterised in that step
（b）The thickness of described Ag bottom electrode layers is 5-15nm.
8. the preparation method of the memristor according to claim 5 with neurobionics function, it is characterised in that step
（d）The thickness in the graphene oxide quantum dot intermediate layer of formation is 0.8-1.2nm.
9. the preparation method of the memristor with neurobionics function according to claim 6,7 or 8, it is characterised in that
Step（f）The thickness of described Ag top electrode layers is 50-200nm.
10. the memristor with neurobionics function described in a kind of claim 1 is in the bionical device of nerve synapse is prepared
Using.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710777067.XA CN107681048B (en) | 2017-09-01 | 2017-09-01 | Memristor with nerve bionic function and preparation method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710777067.XA CN107681048B (en) | 2017-09-01 | 2017-09-01 | Memristor with nerve bionic function and preparation method and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107681048A true CN107681048A (en) | 2018-02-09 |
| CN107681048B CN107681048B (en) | 2020-01-14 |
Family
ID=61134990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710777067.XA Active CN107681048B (en) | 2017-09-01 | 2017-09-01 | Memristor with nerve bionic function and preparation method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107681048B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987569A (en) * | 2018-07-27 | 2018-12-11 | 河北大学 | A kind of memristor based on bismuth oxyiodide film, preparation method and application |
| CN109411600A (en) * | 2018-10-30 | 2019-03-01 | 兰州大学 | A kind of method and its resistance-variable storing device reducing resistance-variable storing device operation voltage |
| CN111009608A (en) * | 2019-12-13 | 2020-04-14 | 河北大学 | Solid electrolyte memristor and preparation method and application thereof |
| CN111916558A (en) * | 2020-07-29 | 2020-11-10 | 桂林电子科技大学 | Memristor with h-BN as intermediate intercalation |
| CN112563414A (en) * | 2019-12-31 | 2021-03-26 | 东北师范大学 | Analog all-carbon-based memristor synapse device and preparation method thereof |
| CN112909166A (en) * | 2021-01-26 | 2021-06-04 | 天津理工大学 | Nerve synapse bionic device based on polyelectrolyte double-layer structure |
| CN113517365A (en) * | 2021-07-09 | 2021-10-19 | 西安电子科技大学 | Photoelectric synapse device based on transparent oxide and application thereof |
| CN113594025A (en) * | 2021-06-11 | 2021-11-02 | 河北大学 | Preparation method of silicon-based molecular beam heteroepitaxial growth material, memristor and application |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097586A (en) * | 2010-11-29 | 2011-06-15 | 复旦大学 | Flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and manufacturing method thereof |
| CN103311434A (en) * | 2013-05-27 | 2013-09-18 | 河北大学 | Transparent resistive random access memory and production method thereof |
| CN104409629A (en) * | 2014-11-29 | 2015-03-11 | 国网河南省电力公司南阳供电公司 | Resistance random access memory based on graphene oxides |
| KR20150065440A (en) * | 2013-12-05 | 2015-06-15 | 명지대학교 산학협력단 | The quantum dot-graphene oxide nanocomposite, reduced quantum dot-graphene oxide nanocomposite, and method for manufacturing thereof |
| CN104810477A (en) * | 2015-05-07 | 2015-07-29 | 河北大学 | Misunderstanding prevention resistance random access memory and production method thereof |
| US20150280248A1 (en) * | 2014-03-26 | 2015-10-01 | William Marsh Rice University | Graphene quantum dot-carbon material composites and their use as electrocatalysts |
| CN105304813A (en) * | 2015-09-23 | 2016-02-03 | 复旦大学 | Neural synapse simulation device and preparation method thereof |
-
2017
- 2017-09-01 CN CN201710777067.XA patent/CN107681048B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097586A (en) * | 2010-11-29 | 2011-06-15 | 复旦大学 | Flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and manufacturing method thereof |
| CN103311434A (en) * | 2013-05-27 | 2013-09-18 | 河北大学 | Transparent resistive random access memory and production method thereof |
| KR20150065440A (en) * | 2013-12-05 | 2015-06-15 | 명지대학교 산학협력단 | The quantum dot-graphene oxide nanocomposite, reduced quantum dot-graphene oxide nanocomposite, and method for manufacturing thereof |
| US20150280248A1 (en) * | 2014-03-26 | 2015-10-01 | William Marsh Rice University | Graphene quantum dot-carbon material composites and their use as electrocatalysts |
| CN104409629A (en) * | 2014-11-29 | 2015-03-11 | 国网河南省电力公司南阳供电公司 | Resistance random access memory based on graphene oxides |
| CN104810477A (en) * | 2015-05-07 | 2015-07-29 | 河北大学 | Misunderstanding prevention resistance random access memory and production method thereof |
| CN105304813A (en) * | 2015-09-23 | 2016-02-03 | 复旦大学 | Neural synapse simulation device and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| FAN FEI,ET AL: "Conjugated polymer covalently modified graphene oxide quantum dots for ternary electronic memory devices", 《NANOSCALE》 * |
| JI YONGSUNG, ET AL: "Resistive switching characteristics of ZnO-graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture", 《ORGANIC ELECTRONICS》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987569A (en) * | 2018-07-27 | 2018-12-11 | 河北大学 | A kind of memristor based on bismuth oxyiodide film, preparation method and application |
| CN109411600A (en) * | 2018-10-30 | 2019-03-01 | 兰州大学 | A kind of method and its resistance-variable storing device reducing resistance-variable storing device operation voltage |
| CN111009608A (en) * | 2019-12-13 | 2020-04-14 | 河北大学 | Solid electrolyte memristor and preparation method and application thereof |
| CN111009608B (en) * | 2019-12-13 | 2023-09-22 | 河北大学 | Solid electrolyte memristor and preparation method and application thereof |
| CN112563414A (en) * | 2019-12-31 | 2021-03-26 | 东北师范大学 | Analog all-carbon-based memristor synapse device and preparation method thereof |
| CN112563414B (en) * | 2019-12-31 | 2022-11-08 | 东北师范大学 | Analog all-carbon-based memristor synapse device and preparation method thereof |
| CN111916558A (en) * | 2020-07-29 | 2020-11-10 | 桂林电子科技大学 | Memristor with h-BN as intermediate intercalation |
| CN111916558B (en) * | 2020-07-29 | 2023-06-27 | 桂林电子科技大学 | Memristor with h-BN as intermediate intercalation |
| CN112909166A (en) * | 2021-01-26 | 2021-06-04 | 天津理工大学 | Nerve synapse bionic device based on polyelectrolyte double-layer structure |
| CN113594025A (en) * | 2021-06-11 | 2021-11-02 | 河北大学 | Preparation method of silicon-based molecular beam heteroepitaxial growth material, memristor and application |
| CN113594025B (en) * | 2021-06-11 | 2023-07-28 | 河北大学 | Preparation method of silicon-based molecular beam heteroepitaxial growth material, memristor and application |
| CN113517365A (en) * | 2021-07-09 | 2021-10-19 | 西安电子科技大学 | Photoelectric synapse device based on transparent oxide and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107681048B (en) | 2020-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107681048A (en) | A kind of memristor and preparation method and application with neurobionics function | |
| CN108807668B (en) | High-performance memristor based on metal oxide oxygen concentration gradient and preparation thereof | |
| CN106098932A (en) | A kind of linear gradual memristor and preparation method thereof | |
| CN111009608B (en) | Solid electrolyte memristor and preparation method and application thereof | |
| CN112599664B (en) | Ultra-low energy consumption flexible thin film memristor simulating nerve synapses and preparation method thereof | |
| CN107293642A (en) | One kind is based on HfO2‑xTwo-value and multivalue memristor, preparation method and applications | |
| CN107681049B (en) | Resistance random access memory capable of avoiding misreading and preparation method | |
| CN108428792A (en) | Based on the multistage resistance-variable storing device and preparation method of inorganic perovskite and application | |
| CN104409630A (en) | Unipolar resistive random access memory based on gallium oxide thin film, and preparation method for unipolar resistive random access memory | |
| CN104810477B (en) | A kind of resistance-variable storing device for avoiding misreading and preparation method thereof | |
| CN106601910B (en) | A kind of organic electrode resistance-variable storing device and preparation method thereof | |
| CN106654006B (en) | One kind being based on SiO2Neurobionics device of neurobionics layer and preparation method thereof | |
| CN106784307B (en) | One kind being based on TiO2Neurobionics device of neurobionics layer and preparation method thereof | |
| CN109461814B (en) | Memristor based on zinc oxide, preparation method of memristor and application of memristor in preparation of neurosynaptic biomimetic device | |
| CN109461813B (en) | Resistive random access memory based on tungsten sulfide nanosheet and preparation method thereof | |
| CN109524545A (en) | One kind being based on two dimension Ti3C2Neurobionics device of material and preparation method thereof | |
| CN109545959A (en) | A kind of memory device and its manufacturing method | |
| CN114188478A (en) | Biodegradable memristor array with information storage function and preparation method | |
| CN107622878A (en) | Preparation method of nano-porous gold/manganese dioxide composite electrode material | |
| CN116056553A (en) | Ferroelectric memristor based on aluminum scandium nitride, preparation method and application thereof | |
| CN113257996A (en) | Two-end neuromorphic device based on ferroelectric domain inversion | |
| CN113506851B (en) | Low-power-consumption porphyrin zinc memristor and preparation method thereof | |
| Huang et al. | Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag: ZnO/Pt memristor | |
| CN112635663B (en) | Resistive random access memory based on soy protein and preparation method and application thereof | |
| Li et al. | Tuning Bienenstock–Cooper–Munro learning rules in a two-terminal memristor for neuromorphic computing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |