CN106784307B - One kind being based on TiO2Neurobionics device of neurobionics layer and preparation method thereof - Google Patents
One kind being based on TiO2Neurobionics device of neurobionics layer and preparation method thereof Download PDFInfo
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- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
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- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
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Abstract
The invention discloses one kind to be based on TiO2The neurobionics device of neurobionics layer, including Pt/Ti/SiO2/ Si substrate, in the Pt/Ti/SiO2The neurobionics layer and Ag electrode layer sequentially formed on the Pt film of/Si substrate；The neurobionics layer successively includes: TiO from below to up2Film layer, the first TiO2With Ag mixed membranous layer, the 2nd TiO2With Ag mixed membranous layer, the 3rd TiO2With Ag mixed membranous layer.Meanwhile the invention also discloses the preparation methods of the neurobionics device.The both ends of device prepared by the present invention are respectively presynaptic stimulation and postsynaptic stimulation, resistance can be changed according to the time difference of presynaptic stimulation and postsynaptic stimulation, it is capable of the characteristic of mimic biology cynapse, change the resistance value of its resistance under the stimulation for applying different electric pulses, its high low resistance state can occur it is slowly varying, and range stablize；In the case where repeating to apply electric pulse stimulation, the state changed can be remembered, the repeatability of high low-resistance conversion is high, is that a kind of performance is more stable, the more extensive neurobionics device of application prospect.
Description
Technical field
The present invention relates to technical field of microelectronic devices, specifically a kind of to be based on TiO2The nerve of neurobionics layer is imitative
Raw device and preparation method thereof.
Background technique
In information technology field, the area for reducing storage unit is a main driving for developing current data memory technology
Power.But within 15 to 20 years futures, current memory technology is up to its physics limit, it is difficult to further develop.
In order to promote the sustainable development of memory technology, need to find a kind of new developing direction.A kind of its possible developing direction be from
The cognition storage that biology is bionical and comes, it only has data to store this simple function unlike current memory, but as people
Memory it is equally rich and varied, can be realized data storage, information processing and most important cognitive function, be such as suitable for, learn
It practises, with insight, the building of new knowledge etc..The function of this cognition storage is needed as the data storage technology of driving force
Artificial neural network is built using the device with cognitive function, therefore, exploitation cognition memory is this with cognitive function
Microelectronic component is exactly the hot spot studied in current industry.
In cognition memory, the electronic synapse device as building artificial neural network, is a kind of most basic cognition
Memory.Electronic synapse device is the connection between different neurons such as nerve synapse, is had to characterize between neuron
The synapse weight of bonding strength, and under different stimulations, synapse weight can be carried out corresponding change, thus realize study and
The function of memory.However, in neural network, nerve synapse huge number, need to reduce electronic synapse device area and
Power consumption is possible to the neural network for constructing of certain scale, certain cognitive function.In recent years, people pass through many experiments
And test, it is found that this novel electronic component of memristor has similar excellent characteristic, wherein the memory function of memristor
There is very high similitude with controllability and organism nerve synapse.There are 10 in human brain11-1014A neuron, and connect
The cynapse quantity for connecing these neurons is then up to 1015.Nerve synapse consists of three parts: presynaptic membrane, postsynaptic membrane and two
Narrow slit between film --- synaptic cleft, its spacing are usually 20-40nm.Under stimulating electrical signal, the nerve of transmitting information is carried
Mediator passes through synaptic cleft one-way transmission to postsynaptic neuron by presynaptic neuron.Therefore, presynaptic caudacoria is similar to and recalls
The both ends metal electrode of device is hindered, and synaptic cleft is similar to the dielectric layer of memristor, thickness is about tens nanometer.
Synaptic plasticity is the most basic characteristic of organism nerve synapse, and cynapse can be with bonding strength between neuron
Strong and weak dynamic stimulation inhibits signal, so that signal keeps consecutive variations.This requires devices to make applying electric signal
Under, the gradual change of resistance value is realized.Memristor can analog neuron cynapse, most basic foundation is that they have non-linear electric
Property utilizes two class electrical properties of memristor (changing totally different high and low two kinds of resistance states, to realize the gradual behavior of resistance)
Applied in the simulation of nerve synapse.But the neurobionics layer material that is used due to it of current bionical device and structure are set
Count it is unreasonable cause device when applying voltage there are converted between high low resistance state continuity is poor, device stability it is lower with
And the lower defect of repeatability that resistance changes.
Summary of the invention
It is an object of the invention to provide one kind to be based on TiO2Neurobionics device of neurobionics layer and preparation method thereof,
With solve existing neurobionics device exist apply voltage when there are being converted between high low resistance state continuity is poor, device stability
The problems such as poor.
The purpose of the present invention is what is be achieved through the following technical solutions: one kind being based on TiO2The neurobionics of neurobionics layer
Device, including Pt/Ti/SiO2/ Si substrate, in the Pt/Ti/SiO2The neurobionics layer sequentially formed on the Pt film of/Si substrate
With Ag electrode layer；The neurobionics layer successively includes: TiO from below to up2Film layer, the first TiO2With Ag mixed membranous layer, second
TiO2With Ag mixed membranous layer, the 3rd TiO2With Ag mixed membranous layer；First TiO2With TiO in Ag mixed membranous layer2With the volume of Ag
Than for 9:1, the 2nd TiO2With TiO in Ag mixed membranous layer2Volume ratio with Ag is 7:3, the 3rd TiO2With Ag hybrid films
TiO in layer2Volume ratio with Ag is 6:4.
The TiO2The film thickness of film layer is 5-7nm, 6 the oneth TiO2Film thickness with Ag mixed membranous layer is 6-9nm, described in 7
2nd TiO2Film thickness with Ag mixed membranous layer is 6-9nm, 7 the 3rd TiO2Film thickness with Ag mixed membranous layer is 6-9nm.Described in 7
Neurobionics layer with a thickness of 23-34nm.
The Ag electrode layer is several circular electrodes being evenly distributed on the neurobionics layer；The Ag electrode layer
With a thickness of 50-200nm；
The neurobionics layer is prepared using the method for magnetron sputtering, the first TiO2With Ag mixed membranous layer,
Two TiO2With Ag mixed membranous layer and the 3rd TiO2It is prepared with Ag mixed membranous layer using the method for magnetic control co-sputtering.
The present invention also provides one kind to be based on TiO2The preparation method of the neurobionics device of neurobionics layer, including it is following
Step:
(a) by Pt/Ti/SiO2/ Si substrate successively uses ultrasonic cleaning respectively in acetone, alcohol and deionized water, so
It takes out afterwards and uses N2Drying；
(b) by cleaned Pt/Ti/SiO2/ Si substrate is fixed on the substrate table of magnetron sputtering apparatus cavity, and by chamber
Body is evacuated to 1 × 10-4-4×10-4Pa；
(c) TiO is placed respectively on two target platforms in the cavity2Target and Ag target, Ar and O are passed through into cavity2, adjust
Whole interface valve makes the intracorporal pressure of chamber maintain 1-6Pa, blocks Pt/Ti/SiO with baffle2/ Si substrate opens control titanium dioxide
The radio frequency source of titanium target material build-up of luminance, adjustment RF source power are 220-270W, make TiO2Target build-up of luminance, pre-sputtering 8-15min；It opens
The DC power supply for controlling Ag target build-up of luminance, adjusts the power 0.01-1W of DC power supply, makes Ag target build-up of luminance, pre-sputtering 5-8min；
(d) after pre-sputtering, the DC power supply of control Ag target build-up of luminance is closed, Ag target is blocked with baffle, removes Pt/
Ti/SiO2Baffle before/Si substrate, TiO2Target starts formal sputtering, sputtering time 5-7min, in Pt/Ti/SiO2/ Si lining
TiO is grown on the Pt film at bottom2Film layer obtains TiO2Film layer；
(e) TiO is formed2After film layer, Pt/Ti/SiO is blocked with baffle2/ Si substrate opens the direct current of control Ag target build-up of luminance
Power supply, adjustment Dc source power are 0.2-0.3W, and pre-sputtering 8-10min removes Pt/Ti/SiO2Baffle before/Si substrate and
Baffle before Ag target, makes TiO2Target and Ag target cosputtering 6-9min, control its TiO2The cosputtering body of target and Ag target
Product obtains the first TiO than being 9:12With Ag mixed membranous layer；
(f) Pt/Ti/SiO is blocked with baffle2/ Si substrate, the power for adjusting the DC power supply of control Ag target build-up of luminance rise to
1-1.4W making TiO2Target and Ag target cosputtering 6-9min, control its TiO2The cosputtering volume ratio of target and Ag target is 7:
3, obtain the 2nd TiO2With Ag mixed membranous layer；
(g) Pt/Ti/SiO is blocked with baffle2/ Si substrate, the power for adjusting the DC power supply of control Ag target build-up of luminance rise to
2-2.5W making TiO2Target and Ag target cosputtering 6-9min, control its TiO2The cosputtering volume ratio of target and Ag target is 6:
4, obtain the 3rd TiO2With Ag mixed membranous layer；
(h) the 3rd TiO is being formed2With closing radio frequency source and DC power supply after Ag mixed membranous layer, magnetic control is opened after pressure release and is splashed
Cavity is penetrated, has the Pt/Ti/SiO of neurobionics layer in growth2Mask plate is placed on/Si substrate, magnetron sputtering apparatus cavity is taken out
Vacuum is to 1 × 10-4-4×10-4Pa；The Ar that flow is 20-30sccm is passed through into cavity, adjustment interface valve makes the intracorporal pressure of chamber
1-6Pa is maintained by force, opens the DC source of control Ag target build-up of luminance, adjustment direct current source power is 8-11W, make Ag target build-up of luminance,
Pre-sputtering 4-6min；Start formal sputtering 6-10min, in the 3rd TiO2With formation Ag electrode layer on Ag mixed membranous layer.
Ar described in step (c) and O2Be passed through flow-rate ratio be 60-90sccm:40-60 sccm.
TiO is controlled in step (d)2The film thickness of film layer is 5-7nm；The first TiO is controlled in step (e)2With Ag mixed membranous layer
Film thickness is 5-7nm；The 2nd TiO is controlled in step (f)2Film thickness with Ag mixed membranous layer is 6-9nm；Third is controlled in step (g)
TiO2Film thickness with Ag mixed membranous layer is 6-9nm.
The round hole that diameter is 80-120 μm is evenly equipped on mask plate described in step (h).
Step (h) the Ag electrode layer be evenly distributed on the neurobionics layer with a thickness of the several of 50-200nm
Circular electrode.
Neurobionics device provided by the invention is designed as Pt/Ti/SiO2/ Si substrate, neurobionics layer and Ag electrode layer,
And neurobionics layer is designed as to the TiO of certain material and proportion and specific thicknesses2Film layer, the first TiO2With Ag mixed membranous layer,
2nd TiO2With Ag mixed membranous layer, the 3rd TiO2With Ag mixed membranous layer；At specific magnetron sputtering and magnetron co-sputtering process
Reason, makes Ag form a kind of state of concentration gradient in entire neurobionics layer, thus obtained a kind of high-impedance state and low resistance state it
Between the mind that can occur slowly to change, have multiple stable high low resistance states and keep superperformance, neurobionics requirement can be achieved
Through bionical device.Its both ends of device prepared by the present invention are respectively as two input terminals, respectively presynaptic stimulation and cynapse
After stimulate, can according to the presynaptic stimulate and the postsynaptic stimulation time difference and change resistance, be capable of the characteristic of mimic biology cynapse,
Change the resistance value of its resistance under the stimulation for applying different directions pulse and specific resistance variations direction, high low resistance state is presented
Can occur it is slowly varying, and range stablize；There are multiple stable resistance states and there is good retention performance, is repeating to apply electric arteries and veins
In the case that spurt swashs, the state changed can be remembered, the repeatability of high low-resistance conversion is high, is that a kind of performance is more stable, answers
With the more extensive neurobionics device of prospect.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of neurobionics device provided by the present invention.
Fig. 2 is the structural schematic diagram that the magnetron sputtering apparatus of neurobionics device is used to prepare in the present invention.
Fig. 3 is neurobionics Device current-voltage variable condition figure prepared by comparative example 1.
Fig. 4 is neurobionics Device current-voltage variable condition figure prepared by the embodiment of the present invention 2.
Fig. 5 is that neurobionics device prepared by the embodiment of the present invention 2 is applying the resistance and pulse that positive pulse obtains
Relationship change result figure.
Fig. 6 is that neurobionics device prepared by the embodiment of the present invention 2 is applying the resistance and pulse that negative pulse obtains
Relationship change result figure.
Specific embodiment
Following example is for present invention be described in more detail, but the invention is not limited in any way.
Embodiment 1
The imitative device of nerve provided by the present invention, structure is as shown in Figure 1, include the Pt/Ti/SiO of the bottom2/ Si lining
Neurobionics layer 2 on bottom 1, substrate 1, the Ag electrode layer 3 on neurobionics layer 2.Its neurobionics layer 2 is located at the Pt of substrate 1
In film layer.
Wherein neurobionics layer 2 is sequentially overlapped by four tunic layers and is constituted, and is followed successively by the TiO that film thickness is 5-7nm from the bottom to top2
Film layer 21, film thickness are the first TiO of 6-9nm2With Ag mixed membranous layer 22, the 2nd TiO that film thickness is 6-9nm2With Ag mixed membranous layer
23, the three the first TiO that film thickness is 6-9nm2With Ag mixed membranous layer 24, wherein the first TiO2With TiO in Ag mixed membranous layer2And Ag
Volume ratio be 9:1, the 2nd TiO2With TiO in Ag mixed membranous layer2Volume ratio with Ag is 7:3, the 3rd TiO2With Ag mixed membranous layer
Middle TiO2Volume ratio with Ag is 6:4；The overall thickness of its neurobionics layer 2 controls within the scope of 23-34nm.First, second He
3rd TiO2It is prepared with Ag mixed membranous layer using the method for magnetic control co-sputtering.
The thickness of Ag electrode layer 3 can be within the scope of 50-200nm；Ag electrode layer 3 is to be evenly distributed on the neurobionics
The circular electrode that several diameters on layer are 80-120 μm.
Embodiment 2
The preparation method of neurobionics device provided by the present invention includes the following steps:
One, neurobionics layer is formed on the substrate
(1) preparing substrate
Select Pt/Ti/SiO2/ Si is as substrate, then by Pt/Ti/SiO2/ Si substrate is put clear with ultrasonic wave in acetone
10min is washed, ultrasonic cleaning 10min is then used in being put into alcohol, then be put into deionized water with clip taking-up and use ultrasonic wave
5min is cleaned, finally takes out, uses N2Drying.
(2) it places the substrate into cavity and vacuumizes
Using magnetron sputtering apparatus as shown in Figure 2, magnetron sputtering apparatus cavity 4 is opened, tabletting platform 7 is taken out, uses sand paper
Surface blot is removed in polishing, and the organic matter of the waste polished and surface attachment is cleaned with acetone, is finally wiped with alcohol
Only.By cleaned Pt/Ti/SiO2/ Si substrate is placed on tabletting on tabletting platform 7, and when tabletting guarantees Pt/Ti/SiO2/ Si substrate is steady
Solid pressure is on tabletting platform 7 and flattens, and guarantees that growing film is uniform when sputtering.The tabletting platform 7 put in order is put into cavity 4
Substrate table 8 on, after fixing close cavity 4,2 × 10 are evacuated to cavity 4-4Pa。
(3) it is passed through gas
The lower section setting of tabletting platform 7 in cavity 4 is placed with target 6 on target platform 5 there are two target platform 5.Two in the present invention
The target placed on a target platform is respectively titanium dioxide (TiO2) target and silver-colored (Ag) target.Titanium dioxide target is splashed by magnetic control
Radio frequency source outside jet device cavity controls its build-up of luminance, and silver-colored target is risen by the DC source outside magnetron sputtering apparatus cavity to control it
Brightness.The first baffle that can be blocked to silver-colored target is provided with above silver-colored target, in Pt/Ti/SiO2The lower section of/Si substrate
Being provided with can be to Pt/Ti/SiO2The second baffle that/Si substrate is blocked.First baffle and second baffle can be splashed by magnetic control
The corresponding button outside jet device cavity controls its rotation.
First with second baffle by Pt/Ti/SiO2/ Si substrate blocks, and is passed through flow-rate ratio into cavity 4 by charge valve 9
For 50sccm: 25sccm Ar and O2, adjusting interface valve makes the intracorporal pressure of chamber maintain 3-4Pa, opens control titanium dioxide
The radio frequency source of titanium target material build-up of luminance, adjustment RF source power are 250W, make titanium dioxide target build-up of luminance, pre-sputtering 10min；Open control
The DC power supply of Ag target build-up of luminance processed adjusts the power 0.01-1W of DC power supply, makes Ag target build-up of luminance, pre-sputtering 5min.
(4) TiO2The formation of film layer
After presputtering, the DC power supply for closing control Ag target build-up of luminance blocks Ag target with baffle, opens second gear
Plate starts formal sputtering 6min, in Pt/Ti/SiO2The TiO that a layer thickness is 6nm is formed in the Pt film layer of/Si substrate2Film layer,
As TiO2Film layer.
(5) the first TiO2With the formation of Ag mixed membranous layer
Form TiO2After film layer, Pt/Ti/SiO is blocked with second baffle2/ Si substrate opens the straight of control Ag target build-up of luminance
Silver-colored target is still blocked by first baffle in galvanic electricity source, and adjustment Dc source power is 0.26W, makes silver-colored target build-up of luminance, pre-sputtering
10min removes first baffle later, then removes Pt/Ti/SiO2Second baffle before/Si substrate, makes TiO2Target and Ag target
Cosputtering 7min controls its TiO2The cosputtering volume ratio of target and Ag target is 9:1, obtains the first TiO with a thickness of 7nm2And Ag
Mixed membranous layer.
(6) the 2nd TiO2With the formation of Ag mixed membranous layer
In the first TiO2After being formed with Ag mixed membranous layer, with second baffle by Pt/Ti/SiO2/ Si substrate blocks, with first
Baffle blocks silver-colored target, and then adjusting direct current source power is 1.143W, then opens first, second baffle makes TiO later2
Target and Ag target sputter 7min jointly, control its TiO2The cosputtering volume ratio of target and Ag target is 7:3, in the first TiO2
With formation on Ag mixed membranous layer with a thickness of the 2nd TiO of 7nm2With Ag mixed membranous layer.
(7) the 3rd TiO2With the formation of Ag mixed membranous layer
In the 2nd TiO2After being formed with Ag mixed membranous layer, Pt/Ti/SiO is blocked with second baffle2/ Si substrate, uses first gear
Plate blocks silver-colored target, and the power for adjusting the DC power supply of control Ag target build-up of luminance rises to 2.3W, then opens first, second gear
Plate makes TiO2Target and Ag target cosputtering 7min, control its TiO2The cosputtering volume ratio of target and Ag target is 6:4, the
Two TiO2With formation on Ag mixed membranous layer with a thickness of the 3rd TiO of 7nm2With Ag mixed membranous layer.
Two, electrode layer is formed on neurobionics layer
(1) radio frequency source and DC power supply are closed, by 10 pressure release of interface valve, magnetron sputtering apparatus cavity 4 is opened, in Pt/
Ti/SiO2/ Si substrate is formed with the 3rd TiO of neurobionics layer2With place mask plate on Ag mixed membranous layer, on mask plate uniformly
It is densely covered with the round hole that diameter is 90 μm.
(2) 2 × 10 are evacuated to cavity-4Pa；The Ar that flow is 25sccm is passed through in cavity, adjustment interface valve 10 makes chamber
Intracorporal pressure maintains 3-4Pa, opens the DC source for controlling silver-colored target build-up of luminance, and adjustment direct current source power is 10W, makes silver-colored target
Build-up of luminance, pre-sputtering 5min；Formal sputtering 10min later, in the 3rd TiO2With formation Ag electrode layer on Ag mixed membranous layer, that is, prepare
Neurobionics devices.
Embodiments described above is any one embodiment in the preparation method that the present invention is protected, as long as
It can get the claimed neurobionics device of the present invention in the range of claim and technological parameter described in this description,
And prepared neurobionics device and the present embodiment have same or like performance.
The present invention is a kind of neurobionics device, the electronic synapse specifically connected between exactly a kind of imictron
The device of function.The synaptic function of required realization, specially activity schedule rely on synaptic plasticity function, it is desirable that the two of sample
End is as two inputs, respectively presynaptic stimulation and postsynaptic stimulation.We pass through the pulse for applying different amplitudes and width
The resistance that can control this memory resistor, the pulse by applying different directions can control this memory resistor resistance variations
Direction, and have stability and repeatability.
Comparative example 1
Using same equipment and magnetically controlled sputter method, in Pt/Ti/SiO2It grown one layer and this on the Pt film of/Si substrate
Then the titanium deoxid film of the same thickness of invention neurobionics layer has grown one layer of silver electrode layer on titanium deoxid film, lining
Bottom and thickness of electrode are same as Example 2.The material of neurobionics layer is titanium dioxide layer in the comparative example, only neurobionics
The material of layer is different from embodiment 2.
Embodiment 3
Neurobionics device prepared by comparative example 1 is applied voltage to be scanned, the result is shown in Fig. 3.It is applied in silver electrode
One is added then to gradually decrease to 0V from 0 V to 0.6 V, then from 0V to -0.4 then V is progressively increasing to 0V consecutive variations
Voltage be scanned, when this voltage reaches 0.5V or so, device is changed into low resistance state by high-resistance state suddenly, and mind
Resistance through bionical device is maintained at low resistance state, until when application negative voltage is reduced to -0.24 V or so on Ag electrode layer, mind
High-resistance state is changed by low resistance state suddenly through bionical device, and device is always held at high resistance state, until voltage
Scanning returns to 0V.
Neurobionics device prepared by embodiment 2 is applied voltage to be scanned, the result is shown in Fig. 4.As shown in figure 4,
Apply one on the Ag electrode layer of neurobionics device prepared by embodiment 2 then gradually decreasing to from 0 V to 0.3 V
0V, then from 0V to -0.3 V then be scanned in the voltage for progressively increasing to 0V consecutive variations, when this voltage from 0 V scan to
When 1 V, device resistance slowly reduces, and when from 0.1 V scanning to 0.16V or so, device is low by high-resistance state fast transition
Resistance states, and it is maintained at low resistance state, until nerve is imitative when application negative voltage is reduced to -0.06 V or so on Ag electrode layer
Raw device is gradually converted into high-resistance state by low resistance state, and device is always held at high resistance state, until voltage scanning
Return to 0V.By by Fig. 4 compared with Fig. 3, it has been found that the cut-in voltage (0.15 V) of this neurobionics device, close electricity
Press (- 0.06 V) than in the cut-in voltage (0.5 V) of the device of middle dielectric layer silver-doped, not closing voltage (- 2.3V) and wanting
It is low a lot of, effectively shorten the section that its cut-in voltage is closed between voltage.This neurobionics device is opening electricity simultaneously
Pressure closes when near voltage that resistance variations are slower, is more advantageous to the function of analog neuron cynapse, and prepared by comparative example 1
Device is mutation when resistance is near cut-in voltage or closing voltage, is unfavorable for the simulation of nerve synapse function.
It is inputted neurobionics device both ends prepared by embodiment 2 as two, represents presynaptic stimulation and cynapse
After stimulate, positive pulse is being applied to neurobionics device, the relationship change result of obtained resistance and pulse is as shown in Figure 5.It will
Apply positive pulse step-length 0.04V, pulsewidth 300ns, width on the Ag electrode layer of neurobionics device prepared by embodiment 2 respectively
Value is respectively that the waveform of 0.4V, 0.6V, 0.8V are gradually reduced resistance, until making resistance by constantly carrying out pulse scanning
Low resistance state is gradually decreased to, and stabilization is gone down, and is no longer changed with pulse scanning times.From the figure, it can be seen that at other
When condition is identical, amplitude is different, and it is different that device, which is regulated and controled from high-resistance state to pulse number needed for low resistance state,.It applies
The voltage magnitude added is bigger, fewer to pulse number needed for low resistance state by regulating and controlling device from high-resistance state.
It is inputted neurobionics device both ends prepared by embodiment 2 as two, represents presynaptic stimulation and cynapse
After stimulate, negative pulse is being applied to neurobionics device, the relationship change result of obtained resistance and pulse is as shown in Figure 6.?
Apply step-length 0.01V, pulsewidth 300ns, negative pulse amplitude point on the Ag electrode layer of neurobionics device prepared by embodiment 2
It Wei not be scanned for the waveform of -0.4V, -0.6V, -0.8V, so that resistance is gradually increased to high-resistance state, and stabilization is gone down, no
Change again with pulse scanning times.It can be seen that, when other conditions are identical, amplitude is different in figure, by device from high resistance
It is different that state, which regulates and controls to pulse number needed for low resistance state,.The absolute value of the voltage magnitude of application is bigger, will be by device
Regulate and control from low resistance state fewer to pulse number needed for high-resistance state.
Technical solution of the present invention and beneficial effect is described in detail in above-described specific embodiment, Ying Li
Solution is not intended to restrict the invention the foregoing is merely presently most preferred embodiment of the invention, all in principle model of the invention
Interior done any modification, supplementary, and equivalent replacement etc. are enclosed, should all be included in the protection scope of the present invention.
Claims (7)
1. one kind is based on TiO2The neurobionics device of neurobionics layer, which is characterized in that including Pt/Ti/SiO2/ Si substrate,
The Pt/Ti/SiO2The neurobionics layer and Ag electrode layer sequentially formed on the Pt film of/Si substrate；The neurobionics layer from
It successively include: TiO on down2Film layer, the first TiO2With Ag mixed membranous layer, the 2nd TiO2With Ag mixed membranous layer, the 3rd TiO2And Ag
Mixed membranous layer；First TiO2With TiO in Ag mixed membranous layer2Volume ratio with Ag is 9:1, the 2nd TiO2It is mixed with Ag
TiO in film layer2Volume ratio with Ag is 7:3, the 3rd TiO2With TiO in Ag mixed membranous layer2Volume ratio with Ag is 6:4；Institute
State TiO2The film thickness of film layer is 5-7nm, the first TiO2Film thickness with Ag mixed membranous layer is 6-9nm, the 2nd TiO2And Ag
The film thickness of mixed membranous layer is 6-9nm, the 3rd TiO2Film thickness with Ag mixed membranous layer is 6-9nm.
2. according to claim 1 be based on TiO2The neurobionics device of neurobionics layer, which is characterized in that the nerve
Bionical layer with a thickness of 23-34nm.
3. according to claim 1 be based on TiO2The neurobionics device of neurobionics layer, which is characterized in that the nerve
Bionical layer is prepared using the method for magnetron sputtering, the first TiO2With Ag mixed membranous layer, the 2nd TiO2With Ag mixed membranous layer
With the 3rd TiO2It is prepared with Ag mixed membranous layer using the method for magnetic control co-sputtering.
4. according to claim 3 be based on TiO2The neurobionics device of neurobionics layer, which is characterized in that the Ag electricity
Pole layer with a thickness of 50-200nm.
5. one kind is based on TiO2The preparation method of the neurobionics device of neurobionics layer, which comprises the following steps:
(a) by Pt/Ti/SiO2/ Si substrate successively uses ultrasonic cleaning respectively in acetone, alcohol and deionized water, then takes out
Use N2Drying；
(b) by cleaned Pt/Ti/SiO2/ Si substrate is fixed on the substrate table of magnetron sputtering apparatus cavity, and cavity is taken out
Vacuum is to 1 × 10-4-4×10-4Pa；
(c) TiO is placed respectively on two target platforms in the cavity2Target and Ag target, Ar and O are passed through into cavity2, adjustment connects
Mouth valve makes the intracorporal pressure of chamber maintain 1-6Pa, blocks Pt/Ti/SiO with baffle2/ Si substrate opens control titanium dioxide titanium target
The radio frequency source of material build-up of luminance, adjustment RF source power are 220-270W, make TiO2Target build-up of luminance, pre-sputtering 8-15min；Open control
The DC power supply of Ag target build-up of luminance adjusts the power 0.01-1W of DC power supply, makes Ag target build-up of luminance, pre-sputtering 5-8min；
(d) after pre-sputtering, Ag target is blocked with baffle, removes Pt/Ti/SiO2Baffle before/Si substrate, TiO2Target is opened
Beginning formal sputtering, sputtering time 5-7min, in Pt/Ti/SiO2TiO is grown on the Pt film of/Si substrate2Film layer obtains TiO2Film
Layer；Film thickness is 5-7nm；
(e) TiO is formed2After film layer, Pt/Ti/SiO is blocked with baffle2/ Si substrate, the DC power supply of adjustment control Ag target build-up of luminance
Power is 0.2-0.3W, removes Pt/Ti/SiO2The baffle before baffle and Ag target before/Si substrate, makes TiO2Target and Ag target
Material cosputtering 6-9min, controls its TiO2The cosputtering volume ratio of target and Ag target is 9:1, obtains the first TiO2With Ag hybrid films
Layer；Film thickness is 6-9nm；
(f) Pt/Ti/SiO is blocked with baffle2/ Si substrate, the power for adjusting the DC power supply of control Ag target build-up of luminance rise to 1-
1.4W makes TiO2Target and Ag target cosputtering 6-9min, control its TiO2The cosputtering volume ratio of target and Ag target is 7:3,
Obtain the 2nd TiO2With Ag mixed membranous layer；Film thickness is 6-9nm；
(g) Pt/Ti/SiO is blocked with baffle2/ Si substrate, the power for adjusting the DC power supply of control Ag target build-up of luminance rise to 2-
2.5W makes TiO2Target and Ag target cosputtering 6-9min, control its TiO2The cosputtering volume ratio of target and Ag target is 6:4,
Obtain the 3rd TiO2With Ag mixed membranous layer；Film thickness is 6-9nm；
(h) the 3rd TiO is being formed2With closing radio frequency source and DC power supply after Ag mixed membranous layer, magnetron sputtering chamber is opened after pressure release
Body has the Pt/Ti/SiO of neurobionics layer in growth2Mask plate is placed on/Si substrate, magnetron sputtering apparatus cavity is vacuumized
To 1 × 10-4-4×10-4Pa；The Ar that flow is 20-30sccm is passed through into cavity, adjustment interface valve makes the intracorporal pressure dimension of chamber
It holds in 1-6Pa, opens the DC source of control Ag target build-up of luminance, adjustment direct current source power is 8-11W, makes Ag target build-up of luminance, splashes in advance
Penetrate 4-6min；Start formal sputtering 6-10min, in the 3rd TiO2With formation Ag electrode layer on Ag mixed membranous layer.
6. according to claim 5 be based on TiO2The preparation method of the neurobionics device of neurobionics layer, feature exist
In Ar described in step (c) and O2Be passed through flow-rate ratio be 60-90sccm:40-60 sccm.
7. according to claim 5 be based on TiO2The preparation method of the neurobionics device of neurobionics layer, feature exist
In Ag electrode layer with a thickness of 50-200nm in step (h).
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