CN106784307A - One kind is based on TiO2Neurobionics device of neurobionics layer and preparation method thereof - Google Patents
One kind is based on TiO2Neurobionics device of neurobionics layer and preparation method thereof Download PDFInfo
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of the switching material, e.g. layer deposition
- H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
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- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
Abstract
TiO is based on the invention discloses one kind2The neurobionics device of neurobionics layer, including Pt/Ti/SiO2/ Si substrates, in the Pt/Ti/SiO2The neurobionics layer and Ag electrode layers sequentially formed on the Pt films of/Si substrates；The neurobionics layer includes successively from below to up：TiO2Film layer, a TiO2With Ag mixed membranous layers, the 2nd TiO2With Ag mixed membranous layers, the 3rd TiO2With Ag mixed membranous layers.Meanwhile, the invention also discloses the preparation method of the neurobionics device.The two ends of the device prepared by the present invention are respectively presynaptic stimulation and postsynaptic to stimulate, resistance can be changed according to the time difference of presynaptic stimulation and postsynaptic stimulation, it is capable of the characteristic of mimic biology cynapse, change the resistance of its resistance under the stimulation for applying different electric pulses, its low resistance state high can occur it is slowly varying, and scope stabilization；In the case where repeating to apply electric pulse stimulation, the state for changing can be remembered, the repeatability of low-resistance conversion high is high, be the neurobionics device that a kind of performance is more stable, application prospect is more wide.
Description
Technical field
It is specifically a kind of to be based on TiO the present invention relates to technical field of microelectronic devices2The nerve of neurobionics layer is imitated
Raw device and preparation method thereof.
Background technology
In areas of information technology, the area for reducing memory cell is a main driving for developing current data memory technology
Power.But, within following 15 to 20 years, current memory technology is up to its physics limit, it is difficult to further develop.
In order to promote the sustainable development of memory technology, it is necessary to find a kind of new developing direction.A kind of its possible developing direction be from
The cognitive storage that biology is bionical and comes, it only has this simple function of data storage unlike current memory, but as people
Memory it is equally rich and varied, data storage, information processing and most important cognitive function can be realized, be such as suitable for, learn
Practise, with insight, the structure of new knowledge etc..The function of this cognitive storage needs as the data storage technology of driving force
Artificial neural network is built using the device with cognitive function, therefore, exploitation cognitive memory is this with cognitive function
Microelectronic component, is exactly the focus of research in current industry.
It is that most basic one kind is cognitive as the electronic synapse device for building artificial neural network in cognitive memory
Memory.Electronic synapse device, such as nerve synapse, is the connection between different neurons, with being used to characterize between neuron
The synapse weight of bonding strength, and under different stimulations, synapse weight can be changed accordingly, thus realize study and
The function of memory.However, in the middle of neutral net, nerve synapse huge number, it is necessary to reduce electronic synapse device area and
Power consumption, is possible to build the neutral net of of certain scale, certain cognitive function.In recent years, people pass through many experiments
And test, it is found that this new electronic component of memristor has similar excellent characteristic, the wherein memory function of memristor
There is similitude very high with controllability and organism nerve synapse.Have 10 in human brain11-1014Individual neuron, and connect
The cynapse quantity for connecing these neurons is then up to 1015.Nerve synapse is made up of three parts：Presynaptic membrane, postsynaptic membrane and two
Intermembranous narrow slit --- synaptic cleft, its spacing is usually 20-40nm.Under stimulating electrical signal, the nerve of transmission information is carried
Mediator is by presynaptic neuron by synaptic cleft one-way transmission to postsynaptic neuron.Therefore, presynaptic caudacoria is similar to recalling
The two ends metal electrode of device, and synaptic cleft are hindered similar to the dielectric layer of memristor, and its thickness is about tens nanometer.
Synaptic plasticity is the most basic characteristic of organism nerve synapse, and cynapse can be with bonding strength between neuron
Strong and weak dynamic stimulation suppresses signal so that signal keeps consecutive variations.This requires that device can be made electric signal is applied
Under, the gradual change of resistance value is realized.Memristor can analog neuron cynapse, most basic foundation is that they have non-linear electric
Property, i.e., using the class electrical properties of memristor two（Change totally different high and low two kinds of resistance states to realize the gradual behavior of resistance）
It is applied in the simulation of nerve synapse.But, the neurobionics layer material and structure that current bionical device is used due to it set
Meter is unreasonable cause device exist in applied voltage change between low resistance state high that continuity is poor, device stability it is relatively low with
And the repeated relatively low defect that resistance changes.
The content of the invention
TiO is based on it is an object of the invention to provide one kind2Neurobionics device of neurobionics layer and preparation method thereof,
Change between low resistance state high that continuity is poor, device stability to solve to exist when existing neurobionics device has applied voltage
Poor the problems such as.
The purpose of the present invention is achieved through the following technical solutions：One kind is based on TiO2The neurobionics of neurobionics layer
Device, including Pt/Ti/SiO2/ Si substrates, in the Pt/Ti/SiO2The neurobionics layer sequentially formed on the Pt films of/Si substrates
With Ag electrode layers；The neurobionics layer includes successively from below to up：TiO2Film layer, a TiO2With Ag mixed membranous layers, second
TiO2With Ag mixed membranous layers, the 3rd TiO2With Ag mixed membranous layers；First TiO2With TiO in Ag mixed membranous layers2With the volume of Ag
Than being 9:1, the 2nd TiO2With TiO in Ag mixed membranous layers2It is 7 with the volume ratio of Ag:3, the 3rd TiO2With Ag hybrid films
TiO in layer2It is 6 with the volume ratio of Ag:4.
The TiO2The thickness of film layer is 5-7nm, a TiO described in 62Be 6-9nm with the thickness of Ag mixed membranous layers, described in 7
2nd TiO2It is 6-9nm, the 3rd TiO described in 7 with the thickness of Ag mixed membranous layers2It is 6-9nm with the thickness of Ag mixed membranous layers.Described in 7
The thickness of neurobionics layer is 23-34nm.
The Ag electrode layers are some circular electrodes being evenly distributed on the neurobionics layer；The Ag electrode layers
Thickness is 50-200nm；
The neurobionics layer is prepared from using the method for magnetron sputtering, a TiO2With Ag mixed membranous layers, second
TiO2With Ag mixed membranous layers and the 3rd TiO2It is prepared from using the method for magnetic control co-sputtering with Ag mixed membranous layers.
TiO is based on present invention also offers one kind2The preparation method of the neurobionics device of neurobionics layer, including it is following
Step：
（a）By Pt/Ti/SiO2/ Si substrates are cleaned with ultrasonic wave respectively in acetone, alcohol and deionized water successively, Ran Houqu
Go out to use N2Drying；
（b）By cleaned Pt/Ti/SiO2/ Si substrates are fixed on the substrate table of magnetron sputtering apparatus cavity, and cavity is taken out
Vacuum is to 1 × 10-4-4×10-4Pa；
（c）TiO is placed respectively on two target platforms in cavity2Target and Ag targets, to being passed through Ar and O in cavity2, adjustment connects
Mouth valve makes the pressure in cavity maintain 1-6Pa, and Pt/Ti/SiO is blocked with baffle plate2/ Si substrates, open control titanium dioxide titanium target
The radio frequency source of material build-up of luminance, adjustment RF source power is 220-270W, makes TiO2Target build-up of luminance, pre-sputtering 8-15min；Open control
The dc source of Ag target build-ups of luminance, adjusts the power 0.01-1W of dc source, makes Ag target build-ups of luminance, pre-sputtering 5-8min；
（d）After pre-sputtering is finished, the dc source of closing control Ag target build-ups of luminance blocks Ag targets with baffle plate, removes Pt/Ti/
SiO2Baffle plate before/Si substrates, TiO2Target starts formal sputtering, and sputtering time is 5-7min, in Pt/Ti/SiO2/ Si substrates
Pt films on grow TiO2Film layer, obtains TiO2Film layer；
（e）Form TiO2After film layer, Pt/Ti/SiO is blocked with baffle plate2/ Si substrates, open the direct current of control Ag target build-ups of luminance
Source, adjustment Dc source power is 0.2-0.3W, pre-sputtering 8-10min, removes Pt/Ti/SiO2Baffle plate and Ag before/Si substrates
Baffle plate before target, makes TiO2Target and Ag target cosputtering 6-9min, control its TiO2The cosputtering volume of target and Ag targets
Than being 9:1, obtain a TiO2With Ag mixed membranous layers；
（f）Pt/Ti/SiO is blocked with baffle plate2/ Si substrates, the power of the dc source of regulation control Ag target build-ups of luminance rises to 1-
1.4W, makes TiO2Target and Ag target cosputtering 6-9min, control its TiO2The cosputtering volume ratio of target and Ag targets is 7:3,
Obtain the 2nd TiO2With Ag mixed membranous layers；
（g）Pt/Ti/SiO is blocked with baffle plate2/ Si substrates, the power of the dc source of regulation control Ag target build-ups of luminance rises to 2-
2.5W, makes TiO2Target and Ag target cosputtering 6-9min, control its TiO2The cosputtering volume ratio of target and Ag targets is 6:4,
Obtain the 3rd TiO2With Ag mixed membranous layers；
（h）Forming the 3rd TiO2With closing radio frequency source and dc source after Ag mixed membranous layers, magnetron sputtering chamber is opened after pressure release
Body, has the Pt/Ti/SiO of neurobionics layer in growth2Mask plate is placed on/Si substrates, magnetron sputtering apparatus cavity is vacuumized
To 1 × 10-4-4×10-4Pa；To the Ar that flow is 20-30sccm is passed through in cavity, adjustment interface valve ties up the pressure in cavity
Hold in 1-6Pa, open the DC source of control Ag target build-ups of luminance, adjustment direct current source power is 8-11W, makes Ag target build-ups of luminance, is splashed in advance
Penetrate 4-6min；Start formal sputtering 6-10min, in the 3rd TiO2With formation Ag electrode layers on Ag mixed membranous layers.
Step（c）Described in Ar and O2Be passed through flow-rate ratio for 60-90sccm:40-60 sccm.
Step（d）Middle control TiO2The thickness of film layer is 5-7nm；Step（e）The first TiO of middle control2With Ag mixed membranous layers
Thickness is 5-7nm；Step（f）The 2nd TiO of middle control2It is 6-9nm with the thickness of Ag mixed membranous layers；Step（g）Middle control the 3rd
TiO2It is 6-9nm with the thickness of Ag mixed membranous layers.
Step（h）A diameter of 80-120 μm of circular port is evenly equipped with described mask plate.
Step（h）The Ag electrode layers are that the thickness being evenly distributed on the neurobionics layer is some of 50-200nm
Circular electrode.
The neurobionics device that the present invention is provided is designed as Pt/Ti/SiO2/ Si substrates, neurobionics layer and Ag electrode layers,
And neurobionics layer is designed as the TiO of certain material and proportioning and specific thicknesses2Film layer, a TiO2With Ag mixed membranous layers,
2nd TiO2With Ag mixed membranous layers, the 3rd TiO2With Ag mixed membranous layers；At specific magnetron sputtering and magnetic control co-sputtering technique
Reason, makes Ag form a kind of state of concentration gradient in whole neurobionics layer, so as to obtained a kind of high-impedance state and low resistance state it
Between can occur slowly to change, have the low resistance states high of multiple stabilizations and keep superperformance, be capable of achieving the god of neurobionics requirement
Through bionical device.Respectively as two inputs, the respectively presynaptic stimulates and cynapse at its two ends of device prepared by the present invention
After stimulate, can according to the presynaptic stimulate and the postsynaptic stimulate time difference and change resistance, be capable of the characteristic of mimic biology cynapse,
Change the resistance of its resistance under the stimulation for applying different directions pulse and specific resistance variations direction is presented, its low resistance state high
Can occur it is slowly varying, and scope stabilization；There are multiple stabilization resistance states and there is good retention performance, repeating to apply electric arteries and veins
In the case that spurt is sharp, the state for changing can be remembered, the repeatability of low-resistance conversion high is high, is that a kind of performance is more stable, answers
With the more wide neurobionics device of prospect.
Brief description of the drawings
Fig. 1 is the structural representation of neurobionics device provided by the present invention.
Fig. 2 is for preparing the structural representation of the magnetron sputtering apparatus of neurobionics device in the present invention.
Fig. 3 is the neurobionics Device current-voltage variable condition figure prepared by comparative example 1.
Fig. 4 is the neurobionics Device current-voltage variable condition figure prepared by the embodiment of the present invention 2.
Fig. 5 is that the neurobionics device prepared by the embodiment of the present invention 2 is applying resistance and the pulse that positive pulse is obtained
Relationship change result figure.
Fig. 6 is that the neurobionics device prepared by the embodiment of the present invention 2 is applying resistance and the pulse that negative pulse is obtained
Relationship change result figure.
Specific embodiment
Example below is used to further describe the present invention, but the invention is not limited in any way.
Embodiment 1
The imitative device of nerve provided by the present invention, its structure is as shown in figure 1, the Pt/Ti/SiO including the bottom2/ Si substrates 1,
Neurobionics layer 2 on substrate 1, the Ag electrode layers 3 on neurobionics layer 2.Its neurobionics layer 2 is located at the Pt film layers of substrate 1
On.
Wherein neurobionics layer 2 is sequentially overlapped by four tunics layer and constituted, and the TiO that thickness is 5-7nm is followed successively by from the bottom to top2
Film layer 21, thickness is a TiO of 6-9nm2It is the 2nd TiO of 6-9nm with Ag mixed membranous layers 22, thickness2With Ag mixed membranous layers
23rd, thickness is the 3rd the oneth TiO of 6-9nm2With Ag mixed membranous layers 24, wherein a TiO2With TiO in Ag mixed membranous layers2And Ag
Volume ratio be 9:1, the 2nd TiO2With TiO in Ag mixed membranous layers2It is 7 with the volume ratio of Ag:3, the 3rd TiO2With Ag mixed membranous layers
Middle TiO2It is 6 with the volume ratio of Ag:4；The gross thickness of its neurobionics layer 2 is controlled in the range of 23-34nm.First, second He
3rd TiO2It is prepared from using the method for magnetic control co-sputtering with Ag mixed membranous layers.
The thickness of Ag electrode layers 3 can be in the range of 50-200nm；Ag electrode layers 3 are to be evenly distributed on the neurobionics
Some a diameter of 80-120 μm on layer of circular electrode.
Embodiment 2
The preparation method of neurobionics device provided by the present invention comprises the following steps：
First, neurobionics layer is formed on substrate
（1）Preparing substrate
Selection Pt/Ti/SiO2/ Si as substrate, then by Pt/Ti/SiO2/ Si substrates are put and are cleaned with ultrasonic wave in acetone
10min, then cleans 10min in alcohol is put into ultrasonic wave, then taken out with clip be put into it is clear with ultrasonic wave in deionized water
5min is washed, is finally taken out, use N2Drying.
（2）Place the substrate into cavity and vacuumize
Using magnetron sputtering apparatus as shown in Figure 2, magnetron sputtering apparatus cavity 4 is opened, take out compressing tablet platform 7, use sand papering
Remove surface blot, the organic matter of the waste and surface attachment polished is cleaned with acetone, with the last wiped clean of alcohol.Will
Cleaned Pt/Ti/SiO2/ Si substrates are placed on compressing tablet on compressing tablet platform 7, and Pt/Ti/SiO is ensured during compressing tablet2/ Si substrates are firm to be pressed in
On compressing tablet platform 7 and flatten, it is ensured that growing film is uniform when sputtering.The compressing tablet platform 7 that will be put in order is put into the substrate in cavity 4
On platform 8, cavity 4 is closed after fixing, 2 × 10 are evacuated to cavity 4-4Pa。
（3）It is passed through gas
The lower section of the compressing tablet platform 7 in cavity 4 is provided with two target platforms 5, and target 6 is placed with target platform 5.Two targets in the present invention
The target placed on platform respectively titanium dioxide（TiO2）Target and silver（Ag）Target.Titanium dioxide target is set by magnetron sputtering
Control its build-up of luminance, silver-colored target that its build-up of luminance is controlled by the DC source outside magnetron sputtering apparatus cavity for the radio frequency source outside cavity.
The first baffle that can be blocked to silver-colored target is provided with above silver-colored target, in Pt/Ti/SiO2Set below/Si substrates
Being equipped with can be to Pt/Ti/SiO2The second baffle that/Si substrates are blocked.First baffle and second baffle can be by magnetron sputterings
The corresponding button outside equipment cavity controls it to rotate.
First with second baffle by Pt/Ti/SiO2/ Si substrates are blocked, by charge valve 9 to being passed through flow-rate ratio in cavity 4
It is 50sccm:The Ar and O of 25sccm2, adjusting interface valve makes the pressure in cavity maintain 3-4Pa, opens control titanium dioxide
The radio frequency source of titanium target material build-up of luminance, adjustment RF source power is 250W, makes titanium dioxide target build-up of luminance, pre-sputtering 10min；Open control
The dc source of Ag targets build-up of luminance processed, adjusts the power 0.01-1W of dc source, makes Ag target build-ups of luminance, pre-sputtering 5min.
（4）TiO2The formation of film layer
After presputtering, the dc source of closing control Ag targets build-up of luminance, Ag targets are blocked with baffle plate, open second baffle,
Start formal sputtering 6min, in Pt/Ti/SiO2It is the TiO of 6nm that a layer thickness is formed in the Pt film layers of/Si substrates2Film layer, as
TiO2Film layer.
（5）First TiO2With the formation of Ag mixed membranous layers
Form TiO2After film layer, Pt/Ti/SiO is blocked with second baffle2/ Si substrates, open the direct current of control Ag target build-ups of luminance
Source, is still blocked silver-colored target by first baffle, and adjustment Dc source power is 0.26W, makes silver-colored target build-up of luminance, pre-sputtering 10min,
First baffle is removed afterwards, then removes Pt/Ti/SiO2Second baffle before/Si substrates, makes TiO2Target and Ag target cosputterings
7min, controls its TiO2The cosputtering volume ratio of target and Ag targets is 9:1, obtain the TiO that thickness is 7nm2With Ag hybrid films
Layer.
（6）2nd TiO2With the formation of Ag mixed membranous layers
In a TiO2After being formed with Ag mixed membranous layers, with second baffle by Pt/Ti/SiO2/ Si substrates are blocked, and use first baffle
Silver-colored target is blocked, it is 1.143W then to adjust direct current source power, then opens first, and second baffle makes TiO afterwards2Target
7min is sputtered jointly with Ag targets, controls its TiO2The cosputtering volume ratio of target and Ag targets is 7:3, in a TiO2And Ag
It is the 2nd TiO of 7nm that thickness is formed on mixed membranous layer2With Ag mixed membranous layers.
（7）3rd TiO2With the formation of Ag mixed membranous layers
In the 2nd TiO2After being formed with Ag mixed membranous layers, Pt/Ti/SiO is blocked with second baffle2/ Si substrates, will with first baffle
Silver-colored target is blocked, and the power of dc source of regulation control Ag target build-ups of luminance rises to 2.3W, then opens first, second baffle,
Make TiO2Target and Ag target cosputtering 7min, control its TiO2The cosputtering volume ratio of target and Ag targets is 6:4, second
TiO2It is the 3rd TiO of 7nm with thickness is formed on Ag mixed membranous layers2With Ag mixed membranous layers.
2nd, electrode layer is formed on neurobionics layer
（1）Radio frequency source and dc source are closed, by the pressure release of interface valve 10, magnetron sputtering apparatus cavity 4 is opened, in Pt/Ti/
SiO2/ Si substrates are formed with the 3rd TiO of neurobionics layer2Mask plate is placed with Ag mixed membranous layers, is uniformly gathered on mask plate
There is a diameter of 90 μm of circular port.
（2）2 × 10 are evacuated to cavity-4Pa；The Ar that flow is 25sccm is passed through in cavity, adjustment interface valve 10 makes chamber
Internal pressure maintains 3-4Pa, opens the DC source of the silver-colored target build-up of luminance of control, and adjustment direct current source power is 10W, makes silver-colored target
Build-up of luminance, pre-sputtering 5min；Formal sputtering 10min afterwards, in the 3rd TiO2With formation Ag electrode layers on Ag mixed membranous layers, that is, prepare
Neurobionics devices.
Embodiments described above is any one embodiment in the preparation method protected of the present invention, if its
Claimed neurobionics device of the invention can be obtained in the range of claim and technological parameter described in this description,
And prepared neurobionics device has same or like performance with the present embodiment.
The present invention is a kind of neurobionics device, is exactly specifically a kind of electronic synapse of connection between imictron
The device of function.The synaptic function of required realization, specially activity schedule rely on synaptic plasticity function, it is desirable to the two of sample
Used as two inputs, respectively the presynaptic stimulates and the postsynaptic stimulates at end.We are by applying the pulse of different amplitudes and width
The resistance of this memory resistor can be controlled, this memory resistor resistance variations can be controlled by the pulse for applying different directions
Direction, and with stability and repeatability.
Comparative example 1
Using same equipment and magnetically controlled sputter method, in Pt/Ti/SiO2One layer is grown on the Pt films of/Si substrates with the present invention
The titanium deoxid film of the same thickness of neurobionics layer, has then grown one layer of silver electrode layer on titanium deoxid film, substrate and
Thickness of electrode is same as Example 2.In the comparative example neurobionics layer material be titanium dioxide layer, its only neurobionics layer
Material is different from embodiment 2.
Embodiment 3
Neurobionics device applied voltage prepared by comparative example 1 is scanned, and its result is shown in Fig. 3.Apply one in silver electrode
The individual V from 0 V to 0.6 and then gradually decreasing to 0V, then V and then progressively increasing to the electricity of 0V consecutive variations from 0V to -0.4
Pressure is scanned, and when this voltage reaches 0.5V or so, device is changed into suddenly low resistance state by high-resistance state, and nerve is imitative
The resistance of raw device is maintained at low resistance state, until when applying negative voltage is reduced to -0.24 V or so on Ag electrode layers, nerve is imitative
Raw device is changed into suddenly high-resistance state by low resistance state, and device is always held at high resistance state, until voltage scanning
Return to 0V.
Neurobionics device applied voltage prepared by embodiment 2 is scanned, and its result is shown in Fig. 4.As shown in figure 4,
Then V is gradually decreasing to from 0 V to 0.3 to apply one on the Ag electrode layers of the neurobionics device prepared by embodiment 2
0V, then V and then be scanned in the voltage for progressively increasing to 0V consecutive variations from 0V to -0.3, when this voltage from 0 V scan to
During 1 V, device resistance slowly reduces, and when from 0.1 V scannings to 0.16V or so, device is low by high-resistance state fast transition
Resistance states, and low resistance state is maintained at, until when applying negative voltage is reduced to -0.06 V or so on Ag electrode layers, nerve is imitative
Raw device is gradually converted into high-resistance state by low resistance state, and device is always held at high resistance state, until voltage scanning
Return to 0V.By by the comparing of Fig. 4 and Fig. 3, it has been found that the cut-in voltage of this neurobionics device（0.15 V）, close electricity
Pressure（-0.06 V）Than not middle dielectric layer silver-doped device cut-in voltage（0.5 V）, close voltage（-2.3V）Will
It is low a lot of, effectively shorten the interval that its cut-in voltage is closed between voltage.This neurobionics device is opening electricity simultaneously
Pressure closes when near voltage that resistance variations are slower, is more beneficial for the function of analog neuron cynapse, and prepared by comparative example 1
Device, its resistance is to be mutated in cut-in voltage or when closing near voltage, is unfavorable for the simulation of nerve synapse function.
Using the neurobionics device two ends prepared by embodiment 2 as two inputs, presynaptic stimulation and cynapse are represented
After stimulate, to neurobionics device to apply positive pulse, the relationship change result of the resistance for obtaining and pulse as shown in Figure 5.Will
Apply positive pulse step-length 0.04V on the Ag electrode layers of the neurobionics device prepared by embodiment 2 respectively, pulsewidth is 300ns, width
Value is respectively the waveform of 0.4V, 0.6V, 0.8V, is scanned by constantly entering horizontal pulse, is gradually reduced resistance, until making resistance
Low resistance state is gradually decreased to, and stabilization is gone down, and is no longer changed with pulse scanning times.From the figure, it can be seen that at other
When condition is identical, amplitude is different, and the pulse number that device is regulated and controled to needed for low resistance state from high-resistance state is different.Apply
Plus voltage magnitude it is bigger, just to regulate and control pulse number to needed for low resistance state from high-resistance state fewer for device.
Using the neurobionics device two ends prepared by embodiment 2 as two inputs, presynaptic stimulation and cynapse are represented
After stimulate, to neurobionics device to apply negative pulse, the relationship change result of the resistance for obtaining and pulse as shown in Figure 6.
Apply step-length 0.01V on the Ag electrode layers of the neurobionics device prepared by embodiment 2, pulsewidth is 300ns, negative pulse amplitude point
Be not -0.4V, the waveform of -0.6V, -0.8V be scanned, resistance is gradually increased to high-resistance state, and stabilization is gone down, no
Change with pulse scanning times again.Be can see in figure, when other conditions are identical, amplitude is different, by device from high resistance
The pulse number that state regulates and controls to needed for low resistance state is different.The absolute value of the voltage magnitude of applying is bigger, just device
It is fewer from pulse number of the low resistance state regulation and control to needed for high-resistance state.
Above-described specific embodiment has been described in detail to technical scheme and beneficial effect, Ying Li
Solution is to the foregoing is only presently most preferred embodiment of the invention, is not intended to limit the invention, all in principle model of the invention
Interior done any modification, supplement and equivalent etc. are enclosed, be should be included within the scope of the present invention.
Claims (9)
1. it is a kind of to be based on TiO2The neurobionics device of neurobionics layer, it is characterised in that including Pt/Ti/SiO2/ Si substrates,
The Pt/Ti/SiO2The neurobionics layer and Ag electrode layers sequentially formed on the Pt films of/Si substrates；Neurobionics layer from
Include successively on down：TiO2Film layer, a TiO2With Ag mixed membranous layers, the 2nd TiO2With Ag mixed membranous layers, the 3rd TiO2And Ag
Mixed membranous layer；First TiO2With TiO in Ag mixed membranous layers2It is 9 with the volume ratio of Ag:1, the 2nd TiO2Mix with Ag
TiO in film layer2It is 7 with the volume ratio of Ag:3, the 3rd TiO2With TiO in Ag mixed membranous layers2It is 6 with the volume ratio of Ag:4.
2. according to claim 1 based on TiO2The neurobionics device of neurobionics layer, it is characterised in that the TiO2
The thickness of film layer is 5-7nm, a TiO2It is 6-9nm, the 2nd TiO with the thickness of Ag mixed membranous layers2With Ag hybrid films
The thickness of layer is 6-9nm, the 3rd TiO2It is 6-9nm with the thickness of Ag mixed membranous layers.
3. according to claim 1 and 2 based on TiO2The neurobionics device of neurobionics layer, it is characterised in that the god
It is 23-34nm through the thickness of bionical layer.
4. according to claim 1 and 2 based on TiO2The neurobionics device of neurobionics layer, it is characterised in that the god
It is prepared from using the method for magnetron sputtering through bionical layer, a TiO2With Ag mixed membranous layers, the 2nd TiO2With Ag hybrid films
Layer and the 3rd TiO2It is prepared from using the method for magnetic control co-sputtering with Ag mixed membranous layers.
5. according to claim 4 based on TiO2The neurobionics device of neurobionics layer, it is characterised in that the Ag electricity
The thickness of pole layer is 50-200nm.
6. it is a kind of to be based on TiO2The preparation method of the neurobionics device of neurobionics layer, it is characterised in that comprise the following steps：
（a）By Pt/Ti/SiO2/ Si substrates are cleaned with ultrasonic wave respectively in acetone, alcohol and deionized water successively, are then taken out
Use N2Drying；
（b）By cleaned Pt/Ti/SiO2/ Si substrates are fixed on the substrate table of magnetron sputtering apparatus cavity, and cavity is taken out
Vacuum is to 1 × 10-4-4×10-4Pa；
（c）TiO is placed respectively on two target platforms in cavity2Target and Ag targets, to being passed through Ar and O in cavity2, adjustment connects
Mouth valve makes the pressure in cavity maintain 1-6Pa, and Pt/Ti/SiO is blocked with baffle plate2/ Si substrates, open control titanium dioxide titanium target
The radio frequency source of material build-up of luminance, adjustment RF source power is 220-270W, makes TiO2Target build-up of luminance, pre-sputtering 8-15min；Open control
The dc source of Ag target build-ups of luminance, adjusts the power 0.01-1W of dc source, makes Ag target build-ups of luminance, pre-sputtering 5-8min；
（d）After pre-sputtering is finished, Ag targets are blocked with baffle plate, remove Pt/Ti/SiO2Baffle plate before/Si substrates, TiO2Target is opened
Beginning formal sputtering, sputtering time is 5-7min, in Pt/Ti/SiO2TiO is grown on the Pt films of/Si substrates2Film layer, obtains TiO2Film
Layer；
（e）Form TiO2After film layer, Pt/Ti/SiO is blocked with baffle plate2/ Si substrates, the dc source of adjustment control Ag target build-ups of luminance
Power is 0.2-0.3W, removes Pt/Ti/SiO2The baffle plate before baffle plate and Ag targets before/Si substrates, makes TiO2Target and Ag targets
Material cosputtering 6-9min, controls its TiO2The cosputtering volume ratio of target and Ag targets is 9:1, obtain a TiO2With Ag hybrid films
Layer；
（f）Pt/Ti/SiO is blocked with baffle plate2/ Si substrates, the power of the dc source of regulation control Ag target build-ups of luminance rises to 1-
1.4W, makes TiO2Target and Ag target cosputtering 6-9min, control its TiO2The cosputtering volume ratio of target and Ag targets is 7:3,
Obtain the 2nd TiO2With Ag mixed membranous layers；
（g）Pt/Ti/SiO is blocked with baffle plate2/ Si substrates, the power of the dc source of regulation control Ag target build-ups of luminance rises to 2-
2.5W, makes TiO2Target and Ag target cosputtering 6-9min, control its TiO2The cosputtering volume ratio of target and Ag targets is 6:4,
Obtain the 3rd TiO2With Ag mixed membranous layers；
（h）Forming the 3rd TiO2With closing radio frequency source and dc source after Ag mixed membranous layers, magnetron sputtering chamber is opened after pressure release
Body, has the Pt/Ti/SiO of neurobionics layer in growth2Mask plate is placed on/Si substrates, magnetron sputtering apparatus cavity is vacuumized
To 1 × 10-4-4×10-4Pa；To the Ar that flow is 20-30sccm is passed through in cavity, adjustment interface valve ties up the pressure in cavity
Hold in 1-6Pa, open the DC source of control Ag target build-ups of luminance, adjustment direct current source power is 8-11W, makes Ag target build-ups of luminance, is splashed in advance
Penetrate 4-6min；Start formal sputtering 6-10min, in the 3rd TiO2With formation Ag electrode layers on Ag mixed membranous layers.
7. according to claim 6 based on TiO2The preparation method of the neurobionics device of neurobionics layer, its feature exists
In step（c）Described in Ar and O2Be passed through flow-rate ratio for 60-90sccm:40-60 sccm.
8. according to claim 6 based on TiO2The preparation method of the neurobionics device of neurobionics layer, its feature exists
In step（d）Middle control TiO2The thickness of film layer is 5-7nm；Step（e）The first TiO of middle control2With the thickness of Ag mixed membranous layers
It is 5-7nm；Step（f）The 2nd TiO of middle control2It is 6-9nm with the thickness of Ag mixed membranous layers；Step（g）The 3rd TiO of middle control2With
The thickness of Ag mixed membranous layers is 6-9nm.
9. according to claim 6 based on TiO2The preparation method of the neurobionics device of neurobionics layer, its feature exists
In step（h）The thickness of middle Ag electrode layers is 50-200nm.
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