CN106654006B - One kind being based on SiO2Neurobionics device of neurobionics layer and preparation method thereof - Google Patents
One kind being based on SiO2Neurobionics device of neurobionics layer and preparation method thereof Download PDFInfo
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- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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Abstract
The invention discloses one kind to be based on SiO2The neurobionics device of neurobionics layer, including Ag substrate, the neurobionics layer and Ag electrode layer that are sequentially formed on Ag substrate；Neurobionics layer successively includes: the first SiO from below to up2Film layer, Ag film middle layer, the 2nd SiO2Film layer.Meanwhile the invention also discloses the preparation methods of the neurobionics device.The both ends of device prepared by the present invention are respectively as two input terminals, respectively presynaptic stimulation and postsynaptic stimulation, resistance can be changed according to the time difference of presynaptic stimulation and postsynaptic stimulation, it is capable of the characteristic of mimic biology cynapse, change the resistance value of its resistance under the stimulation for applying different electric pulses, its high low resistance state can occur it is slowly varying, and range stablize；There are multiple stable resistance states and there is good retention performance, in the case where repeating to apply electric pulse stimulation, can remember the state changed, the repeatability of high low-resistance conversion is high, is that a kind of performance is more stable, the more extensive neurobionics device of application prospect.
Description
Technical field
The present invention relates to technical field of microelectronic devices, specifically a kind of to be based on SiO2The nerve of neurobionics layer is imitative
Raw device and preparation method thereof.
Background technique
In information technology field, the area for reducing storage unit is a main driving for developing current data memory technology
Power.But within 15 to 20 years futures, current memory technology is up to its physics limit, it is difficult to further develop.
In order to promote the sustainable development of memory technology, need to find a kind of new developing direction.A kind of its possible developing direction be from
The cognition storage that biology is bionical and comes, it only has data to store this simple function unlike current memory, but as people
Memory it is equally rich and varied, can be realized data storage, information processing and most important cognitive function, be such as suitable for, learn
It practises, with insight, the building of new knowledge etc..The function of this cognition storage is needed as the data storage technology of driving force
Artificial neural network is built using the device with cognitive function, therefore, exploitation cognition memory is this with cognitive function
Microelectronic component is exactly the hot spot studied in current industry.
In cognition memory, the electronic synapse device as building artificial neural network, is a kind of most basic cognition
Memory.Electronic synapse device is the connection between different neurons such as nerve synapse, is had to characterize between neuron
The synapse weight of bonding strength, and under different stimulations, synapse weight can be carried out corresponding change, thus realize study and
The function of memory.However, in neural network, nerve synapse huge number, need to reduce electronic synapse device area and
Power consumption is possible to the neural network for constructing of certain scale, certain cognitive function.In recent years, people pass through many experiments
And test, it is found that this novel electronic component of memristor has similar excellent characteristic, wherein the memory function of memristor
There is very high similitude with controllability and organism nerve synapse.There are 10 in human brain11-1014A neuron, and connect
The cynapse quantity for connecing these neurons is then up to 1015.Nerve synapse consists of three parts: presynaptic membrane, postsynaptic membrane and two
Narrow slit between film --- synaptic cleft, its spacing are usually 20-40nm.Under stimulating electrical signal, the nerve of transmitting information is carried
Mediator passes through synaptic cleft one-way transmission to postsynaptic neuron by presynaptic neuron.Therefore, presynaptic caudacoria is similar to and recalls
The both ends metal electrode of device is hindered, and synaptic cleft is similar to the dielectric layer of memristor, thickness is about tens nanometer.
Synaptic plasticity is the most basic characteristic of organism nerve synapse, and cynapse can be with bonding strength between neuron
Strong and weak dynamic stimulation inhibits signal, so that signal keeps consecutive variations.This requires devices to make applying electric signal
Under, the gradual change of resistance value is realized.Memristor can analog neuron cynapse, most basic foundation is that they have non-linear electric
Property utilizes two class electrical properties of memristor (changing totally different high and low two kinds of resistance states, to realize the gradual behavior of resistance)
Applied in the simulation of nerve synapse.But current bionical device is not conformed to due to its neurobionics layer material and structure design
Reason leads to device there are the continuitys converted between high low resistance state when applying voltage the conductivity that poor, continuity changes
The low defect of difference, the stability of device.
Summary of the invention
It is an object of the invention to provide one kind to be based on SiO2Neurobionics device of neurobionics layer and preparation method thereof,
With solve existing neurobionics device exist apply voltage when there are being converted between high low resistance state continuity is poor, device stability
The problem of difference.
The purpose of the present invention is what is be achieved through the following technical solutions: one kind being based on SiO2The neurobionics of neurobionics layer
Device, including Ag substrate, the neurobionics layer and Ag electrode layer that are sequentially formed on the Ag substrate；The neurobionics layer from
It successively include: the first SiO on down2Film layer, Ag film middle layer, the 2nd SiO2Film layer.
First SiO2Film layer, Ag film middle layer, the 2nd SiO2The thickness ratio of film layer is 5:1:5；The Ag film middle layer
Thickness be preferably 2-6nm, the thickness of the Ag film middle layer is more preferably 2nm, i.e., the thickness of the described neurobionics layer is in 20-
The practicality is more preferable between 25nm.
The neurobionics layer is prepared using the method for magnetron sputtering.
The Ag electrode layer with a thickness of 50-300nm；The Ag electrode layer is to be evenly distributed on the neurobionics layer
Several diameters be 80-200 μm of circular electrode.
The present invention also provides one kind to be based on SiO2The preparation method of the neurobionics device of neurobionics layer, including it is following
Step:
(a) Ag substrate is successively used in deionized water, acetone and alcohol to ultrasonic cleaning respectively, then takes out and uses N2
Drying；
(b) cleaned Ag substrate is fixed on the substrate table of magnetron sputtering apparatus cavity, and cavity is evacuated to 1
×10-4-4×10-4Pa；
(c) SiO is placed on target platform in the cavity2Target places Ag target on direct current target platform, be passed through into cavity Ar and
O2, adjusting interface valve makes the intracorporal pressure of chamber maintain 1-6Pa, opens control SiO2The radio frequency source of target build-up of luminance adjusts radio frequency source
Power is 100-200W, makes SiO2Target build-up of luminance, pre-sputtering 8-15min；
(d) after pre-sputtering, start formal sputtering, grow SiO on Ag substrate2Film layer, formal sputtering time are 25-
30min obtains the first SiO2Film layer；
(e) by SiO2The radio frequency source of target is turned off, and cavity is evacuated to 1 × 10-4-4×10-4Pa, silicon is extremely
400 DEG C, the DC power supply of control Ag target is opened, adjustment RF source power is 8-11W, makes Ag target build-up of luminance, pre-sputtering 8-
15min starts formal sputtering, in the first SiO2Ag film layer is grown in film layer, the formal sputtering time is 4-8s, is obtained among Ag film
Layer；
(f) DC power supply of Ag target is turned off, keeping underlayer temperature is 400 DEG C, opens and places SiO2Target build-up of luminance
Radio frequency source, adjustment direct current source power are 130-170W, make SiO2Target build-up of luminance, pre-sputtering 8-15min start formal sputtering,
SiO is grown in Ag film middle layer2Film layer, formal sputtering time are 25-35min, obtain the 2nd SiO2Film layer；
(g) the 2nd SiO is being formed2Mask plate is placed on Ag substrate after film layer, magnetron sputtering apparatus cavity is vacuumized
To 1 × 10-4-4×10-4Pa；The Ar that flow is 20-30sccm is passed through into cavity, adjustment interface valve makes the intracorporal pressure dimension of chamber
It holds in 1-6Pa, opens the DC source of control Ag target build-up of luminance, adjustment direct current source power is 8-11W, makes Ag target build-up of luminance, splashes in advance
Penetrate 4-6min；Start formal sputtering 6-10min, in the 2nd SiO2Ag electrode layer is formed in film layer.
Ar described in step (c) and O2It is 50-100sccm: 15-35sccm to the flow-rate ratio that is passed through of cavity.
Step (d), (e), the first SiO of (f) middle control2Film layer, Ag film middle layer and the 2nd SiO2The thickness ratio of film layer is 5:
1:5；The thickness of the Ag film middle layer is preferably 2-6nm；More preferably 2nm.
Ag electrode layer with a thickness of 50-300nm in step (g).
The round hole that diameter is 80-200 μm is evenly equipped on mask plate described in step (g).
Ag electrode layer described in step (g) the Ag electrode layer is several circles being evenly distributed on the neurobionics layer
Electrode.
Neurobionics device provided by the invention is designed as Ag substrate, neurobionics layer and Ag electrode layer, and nerve is imitative
Generating layer is designed as the first SiO of certain material and specific thicknesses ratio2Film layer, Ag film middle layer and the 2nd SiO2Film layer；By specific
Magnetron sputtering technique processing, makes Ag film mid layer section be diffused into the first SiO2Film layer and the 2nd SiO2In film layer, one kind has been obtained
It can occur slowly to change between high-impedance state and low resistance state, have multiple stable high low resistance states and keep superperformance, can be achieved
The neurobionics device that neurobionics require.Its both ends of device prepared by the present invention are respectively as two input terminals, respectively
Presynaptic stimulation and postsynaptic stimulation change resistance according to the time difference of presynaptic stimulation and postsynaptic stimulation, can imitate
The characteristic of biological synapse, changes the resistance value of its resistance under the stimulation for applying different electric pulses, and high and low resistance state can occur slowly
Variation, and range is stablized；There are multiple stable resistance states and there is good retention performance, in the feelings for repeating application electric pulse stimulation
Under condition, can remember the state changed, the repeatability of high low-resistance conversion is high, be a kind of performance is more stable, application prospect more
Wide neurobionics device.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of neurobionics device provided by the present invention.
Fig. 2 is the structural schematic diagram that the magnetron sputtering apparatus of neurobionics device is used to prepare in the present invention.
Fig. 3 is neurobionics Device current-voltage variable condition figure prepared by the embodiment of the present invention 2.
Fig. 4 is neurobionics device both end voltage prepared by the embodiment of the present invention 2 with the variation diagram of source table voltage.
Fig. 5 is that the activity schedule of neurobionics device prepared by the embodiment of the present invention 2 relies on synaptic plasticity (STDP)
Functional diagram.
Specific embodiment
Following example is for present invention be described in more detail, but the invention is not limited in any way.
Embodiment 1
The imitative device of nerve provided by the present invention, structure is as shown in Figure 1, include Ag substrate 1, the Ag substrate 1 of the bottom
On neurobionics layer 2, the Ag electrode layer 3 on neurobionics layer 2.
Wherein neurobionics layer 2 is sequentially overlapped by trilamellar membrane layer and is constituted, and is followed successively by the first SiO from the bottom to top2Film layer 21, Ag
Film middle layer 22, the 2nd SiO2Film layer 23.First SiO2Film layer 21, Ag film middle layer 22, the 2nd SiO2The thickness ratio of film layer 23 is
5:1:5；Its Ag film middle layer 22 is 2-6nm, preferably 2nm, and in general, the overall thickness of neurobionics layer 2 is in 20-25nm range
Interior practicability is more preferable.Neurobionics layer 2 is prepared using magnetically controlled sputter method, and 2 part of Ag film middle layer is diffused in first
SiO2Film layer 21 and the 2nd SiO2In film layer 23.
The thickness of Ag electrode layer 3 can be within the scope of 50-300nm；Ag electrode layer 3 is to be evenly distributed on the neurobionics
The circular electrode that several diameters on layer are 80-200 μm.
Embodiment 2
The preparation method of neurobionics device provided by the present invention includes the following steps:
One, neurobionics layer is formed on the substrate
(1) preparing substrate
It selects Ag as substrate, then Ag substrate is put in acetone with ultrasonic cleaning 10min, is then being put into alcohol
It is middle to use ultrasonic cleaning 10min, then be put into deionized water with clip taking-up and use ultrasonic cleaning 5min, it finally takes out, uses N2
Drying.
(2) it places the substrate into cavity and vacuumizes
Using magnetron sputtering apparatus as shown in Figure 2, magnetron sputtering apparatus cavity 4 is opened, tabletting platform 9 is taken out, uses sand paper
Polishing removes that surface blot is shinny to its uniform color, the waste polished clean with acetone and organic matter that surface is adhered to,
With the last wiped clean of alcohol.Cleaned Ag substrate is placed on tabletting on tabletting platform 9, when tabletting guarantees that Ag substrate is firm and is pressed in
It on tabletting platform 9 and flattens, guarantees that growing film is uniform when sputtering.The substrate tabletting platform 9 put in order being put into cavity 4
On platform 8, cavity 4 is closed after fixing, 2 × 10 are evacuated to cavity 4-4Pa。
(3) it is passed through gas
The lower section of tabletting platform 9 in cavity 4 is provided with target platform 6 and target platform 12, is used to place silver-colored target 7, target on target platform 6
For placing silica target 11 on platform 12.Silica target controls it by the radio frequency source outside magnetron sputtering apparatus cavity
Build-up of luminance, and silver-colored target is controlled its build-up of luminance by the DC source outside magnetron sputtering apparatus cavity.
When the intracorporal air pressure of chamber is 2 × 10-4When Pa, two gas cylinders are opened, flow-rate ratio is passed through into cavity by charge valve 5
For 75sccm: 25sccm Ar and O2, adjusting interface valve 10 makes the intracorporal pressure of chamber maintain 1-6Pa, opens control dioxy
The radio frequency source of SiClx target build-up of luminance, adjustment RF source power are 150W, make silica target build-up of luminance, pre-sputtering 10min.
(4) the first SiO2The formation of film layer
After silica pre-sputtering, baffle is opened, starts formal sputtering 30min, forms one layer on Ag substrate
SiO2Film layer, as the first SiO2Film layer.
(5) formation of Ag film middle layer
The radio frequency source for controlling silica target build-up of luminance is turned off, cavity is evacuated to 2 × 10-4Pa opens control Ag target
The DC power supply of build-up of luminance, substrate are warming up to 400 DEG C, and adjustment RF source power is 10w, make silver-colored target build-up of luminance, pre-sputtering 10min,
Then formal sputtering 6s obtains Ag film middle layer, and the Ag of Ag film middle layer partially diffuses into the first SiO at this time2In film layer.
(6) the 2nd SiO2The formation of film layer
After forming Ag film middle layer, DC power supply is closed, opens radio-frequency power supply, when underlayer temperature is 400 DEG C, control
The radio frequency source of silica target build-up of luminance processed, adjustment RF source power are 150W, make silica target build-up of luminance, pre-sputtering
10min starts formal sputtering 30min, and the 2nd SiO is formed in Ag film middle layer2Film layer, the at this time portion the Ag of Ag film middle layer
Divide and diffuses into the 2nd SiO2In film layer.
Two, electrode layer is formed on neurobionics layer
(1) radio frequency source is closed, by 10 pressure release of interface valve, magnetron sputtering apparatus cavity 4 is opened, is formed with mind in Ag substrate
The 2nd SiO through bionical layer2Mask plate is placed in film layer, and the round hole that diameter is 90 μm is uniformly densely covered on mask plate；By two
Silica target replaces with Ag target, cleaning chamber；
(2) 2 × 10 are evacuated to cavity-4Pa；The Ar that flow is 25sccm is passed through in cavity, adjustment interface valve 10 makes chamber
Intracorporal pressure maintains 1-6Pa, opens the DC source for controlling silver-colored target build-up of luminance, and adjustment direct current source power is 10W, makes silver-colored target
Build-up of luminance, pre-sputtering 5min；Formal sputtering 10min later, in the 2nd SiO2Ag electrode layer is formed in film layer, that is, it is imitative to be prepared for nerve
Raw device.
Embodiments described above is any one embodiment in the preparation method that the present invention is protected, as long as
It can get the claimed neurobionics device of the present invention in the range of claim and technological parameter described in this description,
And device prepared by prepared neurobionics device and the present embodiment has same or like performance.
The manufactured device come out of the invention has the function of electronic synapse, the function of general cynapse, specially activity schedule
It relies on synaptic plasticity (Spike-Time-Depend Plasticity, STDP), is related to presynaptic stimulation and postsynaptic thorn
Sharp collective effect.In electronic synapse device, the both ends of device have respectively represented presynaptic and postsynaptic, two polar electricity
Pulse is respectively applied to this both ends as presynaptic stimulation and postsynaptic stimulation and comes to change voltage value as different stimulations
Change resistance.
Embodiment 3
Apply voltage to neurobionics device prepared by embodiment 2 to be scanned, result is as shown in Figure 3.To implementation
Apply a positive voltage on the Ag electrode layer of neurobionics device prepared by example 2, electric current increased dramatically to current limliting, and device is in
Low resistance state, when applying negative voltage on the Ag electrode layer in device, the electric current of device is strongly reduced, and resistance is become from low resistance state
High-impedance state.And increase based on primary voltage value before current voltage variation always.Neurobionics device prepared by the present invention
The resistive characteristic physical mechanism showed is conductive filament resistive mechanism, and principle is that electricity is realized in the formation of conductive filament and fracture
Hinder the conversion of height.When applying forward voltage to neurobionics device prepared by embodiment 2, metal under electric field action from
The conductive channel that son is formed increased dramatically electric current, and device is in low resistive state.After applying negative voltage, what high current generated
Joule heat causes conductive filament to be broken, so that electric current strongly reduces, device becomes high-impedance state again.It is shown in figure, to neurobionics
Device applies different voltage, and obtained I-V characteristic curve is essentially identical, and resistance value can become with voltage change is applied
Change, and can remember previous state, makes voltage that continuity variation be presented.Non-linear property, Memorability and the mind of prepared device
Transsynaptic principle has very high similitude.
On the neurobionics device prepared by embodiment 2, by the way that electronic synapse device is added in ball bearing made, point
Not Ce Liang source table voltage value and measuring resistance voltage value, by change source table voltage, by its value control between -1V ~ 0.5V,
As a result as shown in Figure 4.In figure when the voltage for being applied to source table is greater than 0 V, it is gradually increased the voltage of source table, passes through neurobionics
The electric current of device is also gradually increased, and its resistance is gradually reduced.When the voltage for being applied to source table is less than 0V, it is down to from -0.8V
During 0V, it is gradually reduced by the electric current of neurobionics device, resistance is gradually increased.Absolutely prove pulse signal size
Variation can cause the variation of device resistance, and the variation of resistance is nonlinear.In this way, when analog neuron cynapse, cynapse pair
The perception of environmental stimuli can be showed with the variation of voltage well.
It is inputted neurobionics device both ends prepared by embodiment 2 as two, represents presynaptic stimulation and cynapse
After stimulate, synaptic plasticity (STDP) is relied on to the activity schedule of neurobionics device and is detected, result is as shown in Figure 5.
The identical electric pulse of amplitude size is successively added in two input terminals of device, burst length difference is arranged to 10 μ s, with conductance G
Size indicate the size of synapse weight, the variation delta W of synapse weight is conductance relative variation.In Fig. 5, work as the burst length
When poor Δ t > 0, weight W reduces, and device resistance increases；As Δ t < 0, weight increases, and device resistance reduces.And when pulse
Between difference it is smaller, weight variation delta W is bigger, and burst length difference is bigger, and weight variation delta W is smaller, when the burst length difference arrive greatly
When to a certain degree, weight variation delta W levels off to zero.Change and electric pulse amplitude is controlled by voltage pulse time difference after the presynaptic
Size influences the effect of the two superposition, controls the variation of resistance, it was demonstrated that prepared electronic bio device has the function of STDP
Can, it can realize nerve synapse function.
Technical solution of the present invention and beneficial effect is described in detail in above-described specific embodiment, Ying Li
Solution is not intended to restrict the invention the foregoing is merely presently most preferred embodiment of the invention, all in principle model of the invention
Interior done any modification, supplementary, and equivalent replacement etc. are enclosed, should all be included in the protection scope of the present invention.
Claims (6)
1. one kind is based on SiO2The neurobionics device of neurobionics layer, which is characterized in that including Ag substrate, in the Ag substrate
On the neurobionics layer and Ag electrode layer that sequentially form；The neurobionics layer successively includes: the first SiO from below to up2Film layer,
Ag film middle layer, the 2nd SiO2Film layer；
Preparation method includes the following steps:
(a) Ag substrate is successively used in deionized water, acetone and alcohol to ultrasonic cleaning respectively, then takes out and uses N2Drying；
(b) cleaned Ag substrate is fixed on the substrate table of magnetron sputtering apparatus cavity, and cavity is evacuated to 1 × 10-4-4×10-4Pa；
(c) SiO is placed on radio frequency target platform in the cavity2Target places Ag target on direct current target platform, be passed through into cavity Ar and
O2, adjusting interface valve makes the intracorporal pressure of chamber maintain 1-6Pa, opens control SiO2The radio frequency source of target build-up of luminance adjusts radio frequency source
Power is 100-200W, makes SiO2Target build-up of luminance, pre-sputtering 8-15min；
(d) after pre-sputtering, start formal sputtering, grow SiO on Ag substrate2Film layer, formal sputtering time are 25-
30min obtains the first SiO2Film layer；
(e) by SiO2The radio frequency source of target is turned off, and cavity is evacuated to 1 × 10-4-4×10-4Pa, silicon to 400
DEG C, the DC power supply of control Ag target is opened, adjustment RF source power is 8-11W, make Ag target build-up of luminance, pre-sputtering 8-15min,
Start formal sputtering, in the first SiO2Ag film layer is grown in film layer, the formal sputtering time is 4-8s, obtains Ag film middle layer；
(f) DC power supply of Ag target is turned off, keeping underlayer temperature is 400 DEG C, opens control SiO2The radio frequency of target build-up of luminance
Source, adjustment direct current source power are 130-170W, make SiO2Target build-up of luminance, pre-sputtering 8-15min start formal sputtering, in Ag film
SiO is grown in middle layer2Film layer, formal sputtering time are 25-35min, obtain the 2nd SiO2Film layer；
(g) the 2nd SiO is being formed2Mask plate is placed on Ag substrate after film layer, magnetron sputtering apparatus cavity is evacuated to 1 ×
10-4-4×10-4Pa；The Ar that flow is 20-30sccm is passed through into cavity, adjustment interface valve maintains the intracorporal pressure of chamber
1-6Pa opens the DC source of control Ag target build-up of luminance, and adjustment direct current source power is 8-11W, makes Ag target build-up of luminance, pre-sputtering 4-
6min；Start formal sputtering 6-10min, in the 2nd SiO2Ag electrode layer is formed in film layer.
2. according to claim 1 be based on SiO2The neurobionics device of neurobionics layer, which is characterized in that the nerve
Bionical layer with a thickness of 20-25nm, the first SiO2Film layer, Ag film middle layer, the 2nd SiO2The thickness ratio of film layer is 5:1:5.
3. according to claim 1 be based on SiO2The neurobionics device of neurobionics layer, which is characterized in that described first
SiO2Film layer, Ag film middle layer, the 2nd SiO2The thickness ratio of film layer is 5:1:5；The thickness 2-6nm of the Ag film middle layer.
4. one kind is based on SiO2The preparation method of the neurobionics device of neurobionics layer, which comprises the following steps:
(a) Ag substrate is successively used in deionized water, acetone and alcohol to ultrasonic cleaning respectively, then takes out and uses N2Drying；
(b) cleaned Ag substrate is fixed on the substrate table of magnetron sputtering apparatus cavity, and cavity is evacuated to 1 × 10-4-4×10-4Pa；
(c) SiO is placed on radio frequency target platform in the cavity2Target places Ag target on direct current target platform, be passed through into cavity Ar and
O2, adjusting interface valve makes the intracorporal pressure of chamber maintain 1-6Pa, opens control SiO2The radio frequency source of target build-up of luminance adjusts radio frequency source
Power is 100-200W, makes SiO2Target build-up of luminance, pre-sputtering 8-15min；
(d) after pre-sputtering, start formal sputtering, grow SiO on Ag substrate2Film layer, formal sputtering time are 25-
30min obtains the first SiO2Film layer；
(e) by SiO2The radio frequency source of target is turned off, and cavity is evacuated to 1 × 10-4-4×10-4Pa, silicon to 400
DEG C, the DC power supply of control Ag target is opened, adjustment RF source power is 8-11W, make Ag target build-up of luminance, pre-sputtering 8-15min,
Start formal sputtering, in the first SiO2Ag film layer is grown in film layer, the formal sputtering time is 4-8s, obtains Ag film middle layer；
(f) DC power supply of Ag target is turned off, keeping underlayer temperature is 400 DEG C, opens control SiO2The radio frequency of target build-up of luminance
Source, adjustment direct current source power are 130-170W, make SiO2Target build-up of luminance, pre-sputtering 8-15min start formal sputtering, in Ag film
SiO is grown in middle layer2Film layer, formal sputtering time are 25-35min, obtain the 2nd SiO2Film layer；
(g) the 2nd SiO is being formed2Mask plate is placed on Ag substrate after film layer, magnetron sputtering apparatus cavity is evacuated to 1 ×
10-4-4×10-4Pa；The Ar that flow is 20-30sccm is passed through into cavity, adjustment interface valve maintains the intracorporal pressure of chamber
1-6Pa opens the DC source of control Ag target build-up of luminance, and adjustment direct current source power is 8-11W, makes Ag target build-up of luminance, pre-sputtering 4-
6min；Start formal sputtering 6-10min, in the 2nd SiO2Ag electrode layer is formed in film layer.
5. according to claim 4 be based on SiO2The preparation method of the neurobionics device of neurobionics layer, feature exist
In Ar described in step (c) and O2The flow-rate ratio being passed through to cavity is 50-100sccm: 15-35sccm.
6. according to claim 4 or 5 be based on SiO2The preparation method of the neurobionics device of neurobionics layer, feature
It is, Ag electrode layer with a thickness of 50-300nm in step (g).
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| CN111632275B (en) * | 2019-03-01 | 2023-04-28 | 天津工业大学 | Method for regulating synaptic plasticity by inducing low-frequency magnetic stimulation in different time periods through plasticity |
| CN111525029B (en) * | 2020-06-04 | 2023-09-22 | 河北大学 | Pd conductive filament-based bionic synaptic device and preparation method and application thereof |
| CN114870192A (en) * | 2022-03-26 | 2022-08-09 | 天津工业大学 | Analysis method for regulating and controlling synaptic plasticity LTP (Low temperature plasticity) by music rhythm magnetic field generated by pink (soothing) song |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931347A (en) * | 2011-08-12 | 2013-02-13 | 中国科学院微电子研究所 | Resistive random access memory and preparation method thereof |
| CN104934534A (en) * | 2015-05-19 | 2015-09-23 | 中国科学院宁波材料技术与工程研究所 | Biological nerve synapse bionic electronic device and preparation method thereof |
| CN105304813A (en) * | 2015-09-23 | 2016-02-03 | 复旦大学 | Neural synapse simulation device and preparation method thereof |
-
2016
- 2016-11-10 CN CN201610986620.6A patent/CN106654006B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931347A (en) * | 2011-08-12 | 2013-02-13 | 中国科学院微电子研究所 | Resistive random access memory and preparation method thereof |
| CN104934534A (en) * | 2015-05-19 | 2015-09-23 | 中国科学院宁波材料技术与工程研究所 | Biological nerve synapse bionic electronic device and preparation method thereof |
| CN105304813A (en) * | 2015-09-23 | 2016-02-03 | 复旦大学 | Neural synapse simulation device and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| "A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells";Wenhao Chen等;《Nanotechnology》;20160512;第27卷;第1-9页 |
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