CN115117177A - Neuromorphic photoelectric sensor and preparation and regulation method thereof - Google Patents
Neuromorphic photoelectric sensor and preparation and regulation method thereof Download PDFInfo
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Abstract
The invention provides a nerve morphology photoelectric sensor and also provides a preparation method and a regulation method thereof. The nerve morphology photoelectric sensor comprises a base and a plurality of photoelectric sensors, wherein the base is arranged from bottom to top: a substrate located below the channel layer; a channel layer grown on a substrate; an electrode layer over the channel layer; and an ionic gel layer. The nerve morphology photoelectric sensor based on photoinduced phase change can sense, memorize and process the light excitation of an external light field due to the photoinduced nonvolatile phase change. Due to the phase conversion ratio linearly related to the light measurement, the device has linear writing and good holding performance, so that the device has wide application prospect in the aspect of a nerve morphology photoelectric sensing device.
Description
Technical Field
The invention belongs to the field of photoelectricity, and particularly relates to a nerve morphology photoelectric sensor and a preparation and regulation method thereof.
Background
The way that humans get information from the outside is 80% dependent on vision, which can be said to be one of our most important senses. Human vision is fundamentally a memory-based process, where sensory neurons on the retina can not only detect light stimuli, but also perform a first stage of image processing before the brain visual cortex performs more complex visual signal processing. This process of visual perception and cognitive learning has inspired the development of artificial vision systems. Existing CMOS-based artificial intelligence vision systems consist of a photosensor chip, an analog-to-digital converter that converts visual input to digital signals, and an external artificial neural network that performs memory and complex image processing tasks. However, the physical separation of the functional components results in a large amount of redundant data during data storage and transmission, which in turn results in data access delay and relatively high power consumption. Furthermore, with the rapid growth of sensing nodes, bandwidth limitations make it difficult to quickly transmit all data back to a central or cloud computer for real-time processing. Therefore, developing a multifunctional device integrating sensing, memory and processing functions is an effective way to improve the efficiency of the artificial vision system. The photoelectric nerve morphology sensor has the sensing characteristic of being sensitive to light stimulation and the continuously adjustable multi-state nonvolatile storage characteristic, so that a good choice is provided for developing an artificial vision system.
Most of reported neuromorphic optoelectronic devices work on the principle of capturing and de-capturing photogenerated carriers under optical excitation. The separation of photo-generated electron-hole pairs is realized by designing a multilayer structure, and the aim of nonvolatile storage is fulfilled. However, this mechanism of operation also results in poor device performance and low commercial production value. The photoinduced phase change material can generate nonvolatile electronic and structural phase change under the excitation of light, and the phase change proportion of the photoinduced phase change material is linearly related to the light dose, so that the characteristics ensure the good holding characteristic and the linear weight updating of the device. Furthermore, such direct non-volatile optical response is also beneficial for industrial integration and production of the device. Therefore, the neuromorphic photoelectric device prepared based on the photoinduced phase-change material can open up a new way for realizing a high-performance neuromorphic sensor.
Disclosure of Invention
Therefore, the present invention is directed to overcoming the drawbacks of the prior art and providing a neuromorphic photosensor, and methods for preparing and controlling the same. The nerve morphology photoelectric sensor utilizes the nonvolatile light response of the photoinduced phase-change material, realizes the multi-stage reversible nonvolatile switching of device resistance and the light-operated synapse behavior in a mode of an external light field and electrolyte gating, and realizes the nerve morphology photoelectric sensing function integrating sensing, storage and calculation.
Before setting forth the context of the present invention, the terms used herein are defined as follows:
the term "CMOS" refers to: a technique for fabricating large scale integrated circuit chips or chips fabricated using such a technique.
The term "MNIST" refers to: MNIST is a handwritten data set having 28 x 28 pixel images.
The term "reversible non-volatile switching" refers to: the electric conductivity of the device can be regulated from the initial state to the final state and can be recovered to the initial state by an external regulating means, and the regulating result of the electric conductivity of the device can not change after the regulating means is removed.
The term "DEME-TFSI" refers to: organic polymer ionic gel.
The term "r-cut alumina substrate" refers to: an alumina substrate with (1-102) as a conventional crystal orientation.
The term "AR-P3540" means: and the photoresist is AR-P3540.
To achieve the above object, a first aspect of the present invention provides a neuromorphic photosensor having a transistor structure, including, sequentially from bottom to top:
a substrate located below the channel layer;
a channel layer grown on a substrate;
an electrode layer over the channel layer;
an ionic gel layer; wherein the ionic gel layer is solid; and
optionally, an external enclosure in a vacuum or nitrogen environment;
preferably, the material of the channel layer is a photo-induced phase change material;
more preferably, the photoinduced phase-change material is an oxide which generates nonvolatile phase change under an external optical field;
further preferably, the oxide is selected from one or more of the following: vanadium dioxide, titanium dioxide, niobium dioxide, most preferably vanadium dioxide.
The neuromorphic photosensor according to the first aspect of the present invention, wherein,
the transistor is of a planar gate structure;
the thickness of the channel layer is 10-100 nm, preferably 10-50 nm, and more preferably 10-20 nm;
the substrate is selected from one or more of the following: an alumina substrate, a titanium oxide substrate, and a silicon substrate, more preferably an alumina substrate, a titanium oxide substrate, and a silicon substrate having a silicon oxide insulating layer grown thereon, and most preferably an r-cut alumina substrate; and/or
The material lattice constant of the substrate and the lattice constant of the channel layer material are matched with each other;
preferably, the substrate is uniform in whole and flat in surface.
The neuromorphic photosensor according to the first aspect of the present invention, wherein,
the electrode layer consists of a gate electrode, a source electrode and a drain electrode; wherein,
the gate electrode is not connected with the source electrode and the drain electrode, is positioned on the side of the channel layer, is parallel to the channel layer and is not connected with the channel layer; and/or
The source electrode and the drain electrode are respectively positioned at two ends of the channel layer and are tightly attached to the channel layer;
preferably, the distance between the gate electrode and the source and drain electrodes is not less than 100nm, more preferably not less than 2 μm, and further preferably not less than 10 μm;
preferably, the thickness of the gate electrode, the source electrode and the drain electrode is 30 to 100nm, more preferably 40 to 80nm, and most preferably 50 nm;
preferably, the gate electrode, the source electrode and the drain electrode are platinum or gold; and/or
Preferably, the source and drain electrodes are rectangular or square in shape, most preferably rectangular.
The neuromorphic photosensor according to the first aspect of the present invention, wherein,
the ion gel layer is positioned above the channel layer and the gate electrode;
the ionic gel layer is dried ionic liquid;
the thickness of the ionic gel layer is not more than 1 μm, preferably not more than 0.9 μm;
the ionic gel layer is a transparent material, and the material of the ionic gel layer is selected from one or more of the following materials: organic polymer ionic gel, porous silicon and gadolinium oxide, and most preferably organic polymer ionic gel; and/or
The ions in the ionic gel layer are conductive, and the electrons are not conductive;
preferably, the ionic gel layer completely covers the channel layer and does not completely cover the gate electrode; and/or
Preferably, the area which is not completely covered is the side of the gate electrode away from the channel.
A second aspect of the present invention provides a method of preparing the neuromorphic photosensor of the first aspect, the method comprising the steps of:
(1) growing an oxide film on a substrate;
(2) etching the oxide film grown in the step (1), and cleaning and blow-drying to obtain an oxide channel;
(3) growing an electrode on the basis of the step (2), dripping ionic liquid on a device of the grown electrode, and baking to form an ionic gel layer; and
(4) and (4) etching the ion gel layer on the basis of the step (3), and cleaning and drying to obtain the nerve morphology photoelectric sensor.
The method according to the second aspect of the present invention, wherein the step (1) further comprises the steps of: growing an oxide film by using a laser pulse deposition method at a high temperature in vacuum;
preferably, the thickness of the oxide thin film is 10-100 nm, more preferably 10-50 nm, and further preferably 10-30 nm;
preferably, the pressure of the vacuum is 1-3 Pa, more preferably 1-2 Pa, and further preferably 1 Pa; and/or
Preferably, the high temperature is 480 ℃ to 550 ℃, more preferably 485 ℃ to 530 ℃, and still more preferably 485 ℃.
The method according to the second aspect of the present invention, wherein the step (2) further comprises the steps of: cleaning and blow-drying the substrate of the oxide film prepared in the step (1), spin-coating a photoresist, baking, exposing and developing, etching the oxide film which is not covered by the photoresist, reserving the oxide film of the channel, and cleaning and blow-drying to obtain an oxide channel;
preferably, the washing solution is selected from one or more of the following: alcohol, acetone, isopropyl alcohol;
preferably, the etching method is ion beam etching or electron beam etching, and most preferably is ion beam etching; and/or
Preferably, the photoresist is AR-P3540.
The method according to the second aspect of the present invention, wherein the step (3) includes the steps of: growing an electrode on the sample after alignment in a vacuum environment, washing and drying, dripping ionic liquid, and baking to form an ionic gel layer;
preferably, the method for growing the electrode is magnetron sputtering or thermal evaporation, and most preferably magnetron sputtering;
preferably, the time for growing the electrode is 200-800 s, more preferably 300-600 s, and most preferably 400 s;
preferably, the step of said alignment is the same as photolithography;
preferably, the baking temperature is 150-400 ℃, more preferably 150-300 ℃, and further preferably 180-250 ℃; and/or
Preferably, the baking time is 5-20 min, more preferably 5-15 min, and most preferably 10 min.
The method according to the second aspect of the present invention, wherein the step (4) comprises the steps of: on the basis of the step (3), spin-coating photoresist, baking, exposing and developing, etching the ionic gel which is not covered by the photoresist, cleaning and blow-drying to obtain the nerve morphology photoelectric sensor;
preferably, the baking, the exposing, the developing and the etching are carried out in the same way as in the step (1); and/or
Preferably, the photoresist and the cleaning solution are the same as in the step (1).
The third aspect of the present invention provides a method for regulating and controlling the neuromorphic photosensor of the first aspect or the neuromorphic photosensor prepared by the method of the second aspect by means of an external light field and an inserted electrolyte gate;
preferably, the channel layer is irradiated by an external light field to cause the change of the oxygen stoichiometric ratio so as to realize the multi-stage reversible nonvolatile switching of the resistance of the channel layer;
more preferably, the wavelength of the external light field is 200-400 nm, and most preferably 375 nm.
The neuromorphic photosensor of the present invention can have, but is not limited to, the following beneficial effects:
(1) compared with the reported photoelectric synapse which is mainly based on charge trapping/releasing effect, the neural morphological photoelectric sensor provided by the invention has the advantages that the working mechanism is photo-induced nonvolatile phase change, and therefore, the device has good retention characteristics. And because the conductance change of the channel and the light measurement of an external light field are in linear correlation, the device has good writing linearity.
(2) The conductance adjustable range of the invention is very large, and the change is continuous, and a large number of intermediate states exist between the maximum conductance value and the minimum conductance value, which is identical with the change characteristic of the synapse weight.
(3) The photomorphous photoelectric sensor based on the photoinduced phase transition has a simple device structure and good CMOS compatibility characteristics, which indicates that the sensor has the possibility of large-scale commercial production. These characteristics make the present invention of great significance in the practical application of neuromorphic sensing devices.
(4) The ionic gel layer is the dried ionic liquid, and the step can ensure the uniformity of the performance of devices among different devices, reduce the thickness of the gel layer and facilitate the practical application of the devices.
Drawings
Embodiments of the invention are described in detail below with reference to the attached drawing figures, wherein:
fig. 1 is a schematic structural diagram of a neuromorphic photosensor based on light-induced phase transition according to embodiment 1 of the present invention.
FIG. 2 is a schematic diagram showing the phase transition of the neuromorphic photoelectric sensor based on photoinduced phase transition under the control of an applied optical field and an electrolyte gate in embodiment 2 of the invention; wherein, FIG. 2A shows the lattice structure of the phase change material without an external optical field; FIG. 2B shows the lattice structure of the phase change material after application of an optical field.
Fig. 3 shows the intelligent sensing and image memory functions of the vanadium dioxide-based ultraviolet neuromorphic sensor in embodiment 3 of the present invention on ultraviolet light.
FIG. 4 shows the image preprocessing function of the vanadium dioxide-based ultraviolet neuromorphic sensor in embodiment 4 of the present invention; wherein, fig. 4A shows three types of test data sets, which are sequentially from left to right: an original MNIST test data set, a same data set with fuzzy visible light information and a data set preprocessed through a convolution kernel of an ultraviolet nerve morphological sensor; fig. 4B shows the dependency of the recognition accuracy of the three data sets with respect to the number of training sessions.
Description of reference numerals:
1. a substrate; 2. a channel layer; 3. an ionic gel layer; G. a gate electrode; s, a source electrode; D. a drain electrode; v G A gate voltage; v SD And source-drain voltage.
Detailed Description
The invention is further illustrated by the following specific examples, which, however, are to be construed as merely illustrative and not limitative of the remainder of the disclosure in any way whatsoever.
This section generally describes the materials used in the testing of the present invention, as well as the testing methods. Although many materials and methods of operation are known in the art for the purpose of carrying out the invention, the invention is nevertheless described herein in as detail as possible. It will be apparent to those skilled in the art that the materials and methods of operation used in the present invention are well within the skill of the art in this context, if not specifically mentioned.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail by taking vanadium dioxide as an example of a photo-induced phase change material which can perform a nonvolatile response to ultraviolet light, and by using specific embodiments in conjunction with the following drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
According to other embodiments of the present invention, the selected photo-phase change material includes, but is not limited to, vanadium dioxide. The substrate also includes but is not limited to a substrate which allows the material to grow with a single crystal and has a better lattice constant matching, and a polycrystalline thin film grown on a flexible substrate and a wafer-level silicon wafer also has good photoinduced phase change and electrolyte-gated reversible phase change modulation characteristics.
In the invention, the size and the shape of the channel layer can be designed according to the actual situation, and the thinner the thickness of the channel layer is, the smaller the ultraviolet light measurement required for causing phase change is, and the shorter the time required for regulation and control is. The distance between the gate and the source and drain should not be too small to avoid sticking.
The reagents and instrumentation used in the following examples are as follows:
materials:
the alumina substrate and the vanadium pentoxide are all purchased from the technical company Limited of the composite fertilizer crystal materials.
The photoresist AR-P3540 and the developing solutions AR 300-47 were obtained from Allresist GmbH, Germany.
DEME-TFSI was purchased from Kanto chemical Co., Ltd (Kanto).
Reagent:
alcohol (not less than 99.7 percent) and acetone (not less than 99.5 percent) are purchased from Guangdong fine chemical company in Beijing.
The instrument comprises the following steps:
semiconductor test system, available from Take technologies, Inc., model number KEITHLEY 4200-SCS.
A 375nm uv laser, available from Oxxius, france, model PS-LBX.
Example 1
This example is intended to illustrate the method of manufacturing a neuromorphic photosensor according to the present invention.
Fig. 1 shows a schematic structural diagram of a neuromorphic photosensor based on photoinduced phase transition in embodiment 1 of the present invention. Wherein the molecular layer is the channel layer 2, namely a photoinduced phase change material, and the molecular layer is grown on the substrate 1 with the similar lattice constant. 5 and 6 are the source and the drain, respectively, and 4 is the gate, the gate being not in contact with the channel layer, the source, and the drain. And an ionic gel layer 3 is coated on the channel layer and the grid. The ion gel layer is made of transparent materials, and an external light field is allowed to penetrate through and irradiate the channel layer, so that the channel layer is subjected to photoinduced phase change, and the resistance of the channel layer is changed. The ion gel layer contains water molecules, hydroxyl is decomposed under negative gate voltage and is injected into the photoinduced phase change material crystal lattice, oxygen vacancies formed by irradiation of an external light field are filled, and reversible nonvolatile regulation and control of the resistance of the channel layer are realized. G represents a gate electrode; s represents a source electrode; d represents a drain electrode; v G Represents the gate voltage; v SD The source-drain voltage is indicated.
In this embodiment, a vanadium dioxide thin film grown on an alumina substrate is taken as an example to describe in detail the preparation method of the neuromorphic photoelectric sensor based on photoinduced phase transition provided by the present invention:
the nerve morphology photoelectric sensor comprises the following specific steps:
1. growing oxide thin films
In the process of film growth, the invention selects a target material of vanadium pentoxide, takes a (1-102) oriented alumina substrate with the thickness of 0.5mm as a substrate, and utilizes a laser pulse deposition method to grow a single crystal vanadium dioxide film on the substrate.
The method comprises the following steps: the alumina substrate was fixed on the heating stage of the laser pulse deposition system by silver glue.
Step two: the growth chamber is vacuumized to 1 x 10 -4 Pa。
Step three: the heating stage was warmed to 485 deg.C at a rate of 20 deg.C/min.
Step four: and after the temperature is stable, introducing oxygen into the chamber, wherein the reading of the oxygen flow meter is 7, and the oxygen pressure of the chamber is 1.0 Pa.
Step four: growing a film, bombarding a vanadium pentoxide target by using an excimer laser with the wavelength of 308nm, wherein the laser energy density is 1J/cm 2 Laser repetition frequency of 3Hz, growth time of 20min and in-situ annealing of 10 min.
Step five: the heating stage was cooled to room temperature at a rate of 20 deg.C/min.
Step six: and taking the sheet to obtain the oxide film, namely the vanadium dioxide film.
2. Preparation of a neuromorphic photoelectric sensor
The method comprises the following steps: cleaning the substrate with the grown film by using an ultrasonic cleaning machine in the sequence of alcohol (more than or equal to 99.7%) -acetone (more than or equal to 99.5%) -alcohol (more than or equal to 99.7%), and drying the substrate by using nitrogen after cleaning;
step two: spin-coating photoresist AR-P3540 on the whole surface of the substrate, and then baking for 3 minutes on a heating table at 90 ℃;
step three: covering a mask plate above a substrate which is coated with photoresist in a spinning mode for ultraviolet exposure, wherein the exposure time is 5 seconds;
step four: placing the exposed substrate into a developing solution AR 300-47 (with the concentration of 50%) to be soaked for 40 seconds, then cleaning the substrate for 15 seconds by using deionized water, and drying the substrate by using nitrogen;
step five: etching the film uncovered by the photoresist part by using an ion beam etching technology, and only reserving the vanadium dioxide film of the channel part;
step six: cleaning the etched substrate in an acetone solution (not less than 99.5%), washing off photoresist residues, cleaning the cleaned substrate in alcohol (not less than 99.7%), and drying the substrate by blowing with nitrogen to obtain a vanadium dioxide oxide channel;
step seven: taking out the semi-finished device in the sixth step, spin-coating photoresist AR-P3540, and then baking for 3 minutes on a hot bench at 90 ℃;
step eight: covering a mask plate above the semi-finished device in the previous step for ultraviolet exposure, wherein the exposure time is 5 seconds;
step nine: putting the semi-finished device in the last step into a developing solution AR 300-47 (with the concentration of 50%) to be soaked for 40 seconds, then cleaning the semi-finished device for 15 seconds by using deionized water, and drying the semi-finished device by using nitrogen;
step ten: placing the semi-finished device in the previous step into a magnetron sputtering growth chamber;
step eleven: the growth chamber is vacuumized to 1 x 10 -6 Torr；
Step eleven: introducing argon into the growth chamber until the pressure is 5 mTorr;
step twelve, growing a platinum electrode, wherein the growth time is 400 seconds, and the thickness of the electrode is 50 nm;
step thirteen: taking out the semi-finished device in the last step, putting the semi-finished device into acetone solution (more than or equal to 99.5%) for cleaning, washing off photoresist residues, putting the cleaned substrate into alcohol (more than or equal to 99.7%) for cleaning, and drying the substrate by using nitrogen;
fourteen steps: coating ionic liquid (DEME-TFSI) on the semi-finished device in the last step in a spinning mode, and then baking the semi-finished device on a hot table at the temperature of 200 ℃ for 10 minutes to form an ionic gel layer;
step fifteen: spin-coating photoresist AR-P3540 on the semi-finished device in the last step, and then baking the semi-finished device on a hot table at 90 ℃ for 3 minutes;
sixthly, the step of: covering a mask plate above the semi-finished device in the previous step for ultraviolet exposure, wherein the exposure time is 5 seconds;
seventeen steps: placing the exposed semi-finished device into a developing solution AR 300-47 (with the concentration of 50%) to be soaked for 40 seconds, then cleaning the device for 15 seconds by using deionized water, and drying the substrate by using nitrogen;
eighteen steps: etching the semi-finished device in the previous step by using an ion beam etching technology;
nineteen steps: cleaning the etched semi-finished device in an acetone solution (not less than 99.5%), washing off photoresist residues, cleaning the cleaned device in alcohol (not less than 99.7%), and drying the device by blowing with nitrogen;
and completing the preparation of the neuromorphic photoelectric sensor.
In the invention, the working principle of the device is the change of the oxygen stoichiometric ratio in the film caused by external light field irradiation, so the channel conductance can be changed more obviously in an oxygen-deficient environment, and the device has good retention property. Therefore, in practical applications, the device needs to be vacuum-packaged after being processed.
Example 2
This example is used to illustrate the phase transition process of the neuromorphic photosensor of the present invention under the application of an applied optical field and electrolyte gating.
FIG. 2 shows a schematic diagram of phase transition of a neuromorphic photosensor based on photoinduced phase transition under the regulation of ultraviolet light and ionic gel; wherein, FIG. 2A shows the lattice structure of the phase change material without an external optical field; fig. 2B shows the lattice structure of the light induced phase change material after application of an optical field (uv light).
Because the activation energy of the oxygen vacancy is between 3 and 3.5eV, an external optical field with higher photon energy can release oxygen in the channel layer film in an oxygen-deficient environment, so that the oxygen vacancy is generated in the crystal lattice. As the positive ions lose electrons, the electronic orbital occupation state of the photoinduced phase change material is changed and electronic structure phase change occurs. In addition, the generation of oxygen vacancies in crystal lattices and the change of the radius of cations caused by the release of electrons lead to certain stress generated in the film, so that the structural phase change of the film is generated, and the high-low transformation of the electric conduction state is realized.
The channel layer shows nonvolatile phase change caused by oxygen chemical metering engineering after external light field irradiation, so that the conductance state of the device can be kept for a long time. In addition, the device conductance has linear correlation with the light gauge of the external light field, and the conductance of the device can be set to any intermediate value between the lowest conductance state and the highest conductance state by adjusting the parameters of the light field such as duration, energy density, frequency and the like, so that the continuously-changing synapse weight can be simulated by using the method.
During reset, electrolyte gating (i.e., application of a gate voltage at the gate electrode terminal to modulate the channel conductance) may insert oxygen ions into the channel layer lattice at a negative gate voltage. With the reduction of oxygen vacancies in crystal lattices, the channel gradually returns to the initial phase, and the reversible regulation and control of the conductance state of the channel are realized.
The electric conductivity of the invention has nonvolatile light response to the applied optical field, which shows that the invention can realize the photoelectric sensing function. The characteristic of the invention that the electrical conduction state can be maintained for a certain time after being changed is matched with the process that the synaptic weight can not be restored immediately, so the invention can be used for simulating the memory process. The characteristic that the self electrical conductivity of the invention is changed by the modulation of the external optical field and the electric field is matched with the process that the synapse weight is changed after the synapse is stimulated by the outside, thereby simulating the learning function of the synapse by using the method. Therefore, the invention can be used for realizing the neuromorphic photoelectric sensor integrating the functions of perception, storage and processing.
Example 3
This embodiment is used to illustrate the intelligent sensing and image memory functions of the neuromorphic photoelectric sensor of the present invention.
The writing method of the nerve form photoelectric sensor is optical writing, an external light field is respectively provided by 650nm red light and 375nm ultraviolet continuous wave lasers, and the laser energy density of the two wavelengths is set to be 64mW/cm 2 . The erasing method of the device is electric erasing, and an external electric field is provided by an external power supply. Fig. 3 shows intelligent sensing and image memory of the letter V with a 3 × 3 array of vanadium dioxide neuromorphic transistors.
Fig. 3 shows the intelligent sensing and image memory functions of the vanadium dioxide-based ultraviolet neuromorphic sensor in embodiment 3 of the present invention on ultraviolet light. A small square of the 3 x 3 matrix in fig. 3 represents the corresponding vanadium dioxide transistor, and the grey scale of the square color represents the channel current variation normalized to the initial input signal.
As can be seen from fig. 3: after 500 seconds of irradiation, the letters V can be written in the sensing array by the red light and the ultraviolet light, but the whole gray scale of the letters written by the red light is obviously smaller than that of the letters written by the ultraviolet light, which indicates that the change of channel current under the irradiation of the red light is small. After the light stimulation is removed, the gray level of the sensing array excited by the red light is almost restored to the initial state after 500 seconds, namely, the channel current change almost disappears after 500 seconds; in the ultraviolet light excited sensing array, the channel current change slightly decreases after 500 seconds and remains unchanged after 2500 seconds. This phenomenon indicates that vanadium dioxide-based neuromorphic sensing arrays can selectively store ultraviolet information.
To demonstrate the erase and write operations in a more intuitive way, we erased the uv written letters using a-2V, 100 sec gate pulse voltage and rewritten the letters using uv light under the same irradiation conditions. The results show that after electrical erase, the channel current is nearly restored to the original state and can remain stable for at least the next 500 seconds. The channel current change of the repeatedly written letter V is almost the same as that of the previous letter V, and the good repeatability of the sensing array in image storage is indicated. The three I-t curves on the right are the actual test results of the devices in the first row and the first column of the sensing array during the optical write/electrical erase operation. The above process shows that the vanadium dioxide-based neuromorphic sensor array has excellent image storage capability and ultraviolet sensing characteristics with non-volatile changes.
Example 4
This embodiment is intended to explain the image preprocessing function of the neuromorphic photosensor of the present invention.
The writing method of the nerve form photoelectric sensor is optical writing, an external light field is provided by a 375nm ultraviolet continuous wave laser, and the laser energy density is set to be 84mW/cm 2 . The erasing method of the device is electric erasing, and an external electric field is provided by an external power supply. FIG. 4 shows the image recognition function of the vanadium dioxide-based ultraviolet neuromorphic sensor。
FIG. 4 shows the image preprocessing function of the vanadium dioxide-based ultraviolet neuromorphic sensor in embodiment 4 of the present invention; wherein, fig. 4A shows three types of test data sets, which are sequentially from left to right: an original MNIST test data set, the same data set with fuzzy visible light information and a data set preprocessed by a convolution kernel of the ultraviolet nerve morphology sensor (as can be seen from fig. 4A, the data set preprocessed by the convolution kernel of the ultraviolet nerve morphology sensor is close to the original MNIST test data set, and the nerve morphology photoelectric sensor provided by the invention is proved to have excellent noise reduction and image preprocessing performances); fig. 4B shows the dependency of the recognition accuracy of the three data sets with respect to the number of training sessions.
To demonstrate the difference in image recognition with or without the ability of the sensing array to focus ultraviolet information, we handwritten digital images (each 28 x 28 pixels in size) using standard MNIST and recognized them. We add an additional value in the computer simulation independent of the RGB values to introduce invisible uv information into the conventional RGB image.
Each vanadium dioxide based uv neuromorphic sensor forms a convolution kernel of size 1 x 4, depending on the device's different response to 650nm, 532nm, 450nm and 375nm light. The feature map obtained after convolution enhances the ultraviolet information and weakens the visible light information. FIG. 4A shows three types of test data sets, which are, in order from left to right: raw MNIST test data sets, the same data sets with fuzzy visible light information, and data sets preprocessed by the convolution kernel of the ultraviolet neuromorphic sensor.
Subsequently, image recognition was performed using a fully connected artificial neural network comprising an input layer (784 neurons), a hidden layer (300 neurons) and an output layer (10 neurons). The artificial neural network was first trained using a back-propagation algorithm and 60,000 images from the MNIST training dataset, and then three types of test datasets were input into the artificial neural network to compare the differences in image recognition accuracy under different conditions.
Fig. 4B shows the dependency of the recognition accuracy of the three data sets with respect to the number of training sessions. It can be seen that for the image containing RGB gaussian noise, the recognition accuracy rate only reaches about 20%, which is slightly higher than the initial accuracy rate. This means that in this case the recognition system hardly recognizes the characteristic information. In contrast, after ultraviolet information is preprocessed by the ultraviolet nerve morphology sensor based on vanadium dioxide, the recognition accuracy of the image reaches about 90 percent, and is the same as that of the original MNIST. The results indicate the effectiveness of the device in extracting uv information. The vanadium dioxide-based ultraviolet neuromorphic sensor also has the neuromorphic sensing function of integrating sensing, storage and processing.
Although the present invention has been described to a certain extent, it is apparent that appropriate changes in the respective conditions may be made without departing from the spirit and scope of the present invention. It is to be understood that the invention is not limited to the described embodiments, but is to be accorded the scope consistent with the claims, including equivalents of each element described.
Claims (10)
1. The utility model provides a neuromorphic photosensor, its characterized in that, neuromorphic photosensor is the transistor structure, includes that set gradually from bottom to top:
a substrate located below the channel layer;
a channel layer grown on a substrate;
an electrode layer over the channel layer;
an ionic gel layer; wherein the ionic gel layer is solid; and
optionally, an external enclosure in a vacuum or nitrogen environment;
preferably, the material of the channel layer is a photo-induced phase change material;
more preferably, the photoinduced phase-change material is an oxide which generates nonvolatile phase change under an external optical field;
further preferably, the oxide is selected from one or more of the following: vanadium dioxide, titanium dioxide, niobium dioxide, most preferably vanadium dioxide.
2. The neuromorphic photosensor according to claim 1 wherein:
the transistor is of a planar gate structure;
the thickness of the channel layer is 10-100 nm, preferably 10-50 nm, and more preferably 10-20 nm;
the substrate is selected from one or more of the following: an alumina substrate, a titanium oxide substrate, and a silicon substrate, more preferably an alumina substrate, a titanium oxide substrate, and a silicon substrate having a silicon oxide insulating layer grown thereon, and most preferably an r-cut alumina substrate; and/or
The material lattice constant of the substrate and the lattice constant of the channel layer material are matched with each other;
preferably, the substrate is uniform in whole and flat in surface.
3. The neuromorphic photosensor according to claim 1 or 2, wherein:
the electrode layer consists of a gate electrode, a source electrode and a drain electrode; wherein,
the gate electrode is not connected with the source electrode and the drain electrode, is positioned on the side of the channel layer, is parallel to the channel layer and is not connected with the channel layer; and/or
The source electrode and the drain electrode are respectively positioned at two ends of the channel layer and are tightly attached to the channel layer;
preferably, the distance between the gate electrode and the source and drain electrodes is not less than 100nm, more preferably not less than 2 μm, and further preferably not less than 10 μm;
preferably, the thickness of the gate electrode, the source electrode and the drain electrode is 30 to 100nm, more preferably 40 to 80nm, and most preferably 50 nm;
preferably, the gate electrode, the source electrode and the drain electrode are platinum or gold; and/or
Preferably, the source and drain electrodes are rectangular or square in shape, most preferably rectangular.
4. The neuromorphic photosensor according to any one of claims 1 to 3 wherein:
the ion gel layer is positioned above the channel layer and the gate electrode;
the ionic gel layer is dried ionic liquid;
the thickness of the ionic gel layer is not more than 1 μm, preferably not more than 0.9 μm;
the ionic gel layer is a transparent material, and the material of the ionic gel layer is selected from one or more of the following materials: organic polymer ionic gel, porous silicon and gadolinium oxide, and most preferably organic polymer ionic gel; and/or
The ionic gel layer is ion-conducting and electron-conducting;
preferably, the ionic gel layer completely covers the channel layer and does not completely cover the gate electrode; and/or
Preferably, the area which is not completely covered is the side of the gate electrode away from the channel.
5. A method of making the neuromorphic photosensor of any one of claims 1-4 comprising the steps of:
(1) growing an oxide film on a substrate;
(2) etching the oxide film grown in the step (1), and cleaning and blow-drying to obtain an oxide channel;
(3) growing an electrode on the basis of the step (2), dripping ionic liquid on a device of the grown electrode, and baking to form an ionic gel layer; and
(4) and (4) etching the ion gel layer on the basis of the step (3), and cleaning and drying to obtain the nerve morphology photoelectric sensor.
6. The method of claim 5, wherein the step (1) further comprises the steps of: growing an oxide film by using a laser pulse deposition method at a high temperature in vacuum;
preferably, the thickness of the oxide thin film is 10-100 nm, more preferably 10-50 nm, and further preferably 10-30 nm;
preferably, the pressure of the vacuum is 1-3 Pa, more preferably 1-2 Pa, and further preferably 1 Pa; and/or
Preferably, the high temperature is 480 ℃ to 550 ℃, more preferably 485 ℃ to 530 ℃, and still more preferably 485 ℃.
7. The method according to claim 5 or 6, wherein the step (2) further comprises the steps of: cleaning and blow-drying the substrate of the oxide film prepared in the step (1), spin-coating a photoresist, baking, exposing and developing, etching the oxide film which is not covered by the photoresist, reserving the oxide film of the channel, and cleaning and blow-drying to obtain the oxide channel;
preferably, the washing solution is selected from one or more of the following: alcohol, acetone, isopropyl alcohol;
preferably, the etching method is ion beam etching or electron beam etching, and most preferably is ion beam etching; and/or
Preferably, the photoresist is AR-P3540.
8. The method according to any one of claims 5 to 7, wherein the step (3) comprises the steps of: growing an electrode on the aligned sample in a vacuum environment, cleaning and drying, dripping ionic liquid, and baking to form an ionic gel layer;
preferably, the method for growing the electrode is magnetron sputtering or thermal evaporation, and most preferably magnetron sputtering;
preferably, the time for growing the electrode is 200-800 s, more preferably 300-600 s, and most preferably 400 s;
preferably, the step of said alignment is the same as photolithography;
preferably, the baking temperature is 150-400 ℃, more preferably 150-300 ℃, and further preferably 180-250 ℃; and/or
Preferably, the baking time is 5-20 min, more preferably 5-15 min, and most preferably 10 min.
9. The method according to any one of claims 5 to 8, wherein the step (4) comprises the steps of: on the basis of the step (3), spin-coating photoresist, baking, exposing and developing, etching the ionic gel which is not covered by the photoresist, cleaning and blow-drying to obtain the nerve morphology photoelectric sensor;
preferably, the baking, the exposing, the developing and the etching are carried out in the same way as in the step (1); and/or
Preferably, the photoresist and the cleaning solution are the same as in the step (1).
10. A method for modulating the neuromorphic photosensor of any one of claims 1 to 4 or the neuromorphic photosensor prepared by the method of any one of claims 5 to 8 by means of an externally applied optical field and inserted electrolyte gating;
preferably, the channel layer is irradiated by an external light field to cause the change of the oxygen stoichiometric ratio so as to realize the multi-stage reversible nonvolatile switching of the resistance of the channel layer;
more preferably, the wavelength of the external light field is 200-400 nm, and most preferably 375 nm.
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