CN115988956A - Superlattice Mott phase change device with adjustable phase change temperature - Google Patents
Superlattice Mott phase change device with adjustable phase change temperature Download PDFInfo
- Publication number
- CN115988956A CN115988956A CN202310046225.XA CN202310046225A CN115988956A CN 115988956 A CN115988956 A CN 115988956A CN 202310046225 A CN202310046225 A CN 202310046225A CN 115988956 A CN115988956 A CN 115988956A
- Authority
- CN
- China
- Prior art keywords
- superlattice
- single crystal
- phase change
- mott
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a superlattice Mott phase change device with adjustable phase change temperature, which comprises a single crystal alumina substrate and a superlattice film formed by alternately laminating a plurality of layers of single crystal vanadium dioxide films and single crystal niobium dioxide films on the single crystal alumina substrate, wherein device electrodes are positioned on the superlattice film, and a superlattice plane channel region is arranged between the two electrodes. The superlattice thin film obtained by alternately growing the vanadium dioxide and niobium dioxide single crystal thin films on the alumina substrate through the PLD method not only can effectively fuse the phase change characteristics of the two materials, but also can influence the phase change temperature of the materials through a plurality of introduced crystal interfaces with stress, and can adjust the phase change temperature of the Mott material to a range matched with the working environment of an integrated circuit chip. Compared with the mode of adjusting the phase transition temperature by ion doping, the method can provide a larger phase transition temperature adjusting range, greatly reduce the energy consumption of the Mott device, ensure the normal and stable working effect, and has important significance for the development and wide application of the neuromorphic device.
Description
Technical Field
The invention belongs to the field of novel microelectronic devices, and particularly relates to a superlattice Mott phase change device with adjustable phase change temperature.
Background
The Mott phase change material is favored by a plurality of researchers in recent years due to the abundant ion dynamic characteristics in the Mott phase change material, the ultra-fast phase change speed and the obvious characteristic difference of electricity, optics and the like before and after phase change. The current mainstream Mott phase change material includes niobium dioxide (NbO) 2 ) And vanadium dioxide (VO) 2 ) The two materials are in an insulation state with higher resistance at room temperature (-300K), and the environment temperature is changed in an electrical or thermal mode, so that when the temperature of the materials exceeds the phase change temperature, rapid Mott phase change can be caused in the materials, and the materials are converted into a metal state with lower resistance. Based on the characteristics of the Mott phase-change material, researchers design and construct various neuromorphic devices including artificial neurons and artificial synapses, and widely apply the neuromorphic devices to the fields of brain-like calculation, complex biological nerve behavior simulation, multi-modal perception and the like, so that hardware cost, time and energy consumption in the information processing and calculating process are effectively reduced.
The main challenge faced by the current Mott phase change material is the phase change temperature mismatched with the working environment of an integrated circuit, wherein the phase change temperature of niobium dioxide is about 1083K, and such high temperature not only causes a large amount of energy consumption in the phase change process, but also increases the design difficulty of a peripheral circuit of a device; on the other hand, the phase transition temperature of vanadium dioxide is about 340K, and the temperature of the integrated circuit chip during operation usually exceeds the temperature, which causes the vanadium dioxide device to be always in a metal state and thus not function normally. In response to this problem, the current solution is mainly to dope the Mott material with metal ions of different valence states to adjust the phase transition temperature. The adjustment range of the phase transition temperature of the material is limited in the mode and is usually within 10K, so that the energy consumed by the phase transition of the niobium dioxide device can not be obviously reduced, and the problem that the vanadium dioxide device cannot normally work in a high-temperature state of a circuit can not be solved.
Superlattice materials can be obtained by periodically arranging a plurality of crystalline materials. The superlattice material can effectively fuse various characteristics of different components, and stress, defects and the like caused by contact interfaces of different materials can also endow the superlattice material with additional characteristics. Considering that the working temperature of a circuit chip is usually within a range of 250K to 450K, the Mott phase change device with the phase change temperature of about 500K is expected to be realized by constructing the vanadium dioxide/niobium dioxide superlattice material, so that the main challenge of the Mott material in the current circuit application is effectively solved.
Disclosure of Invention
In order to solve the problem of mismatch between the phase change temperature of the Mott device and the working temperature of a circuit chip, the invention provides the superlattice Mott phase change device with the adjustable phase change temperature, and the phase change temperature of the device can be adjusted in a large range by adjusting the superlattice parameters, so that the device can normally work when the circuit chip is in a high-temperature state, and the energy consumed in the phase change process of the device can be effectively reduced. Compared with the traditional phase change temperature adjusting method by doping metal ions in the Mott material, the phase change temperature adjusting method is expected to greatly improve the adjusting range of the phase change temperature, so that the phase change temperature adjusting method is more suitable for integrated circuit chips.
The specific structure of the superlattice Mott phase change device with the adjustable phase change temperature is shown in figure 1, and comprises a single crystal alumina substrate and a superlattice thin film formed by alternately laminating a plurality of layers of single crystal vanadium dioxide thin films and single crystal niobium dioxide thin films on the substrate, wherein device electrodes are positioned on the superlattice thin film, and a superlattice plane channel region is arranged between the two electrodes.
The superlattice Mott phase change device integrally grows on the single crystal alumina substrate, and the lattice structure of the superlattice Mott phase change device has higher matching degree with vanadium dioxide and niobium dioxide, so that the growth quality of the upper superlattice structure can be effectively ensured; meanwhile, the single crystal alumina and the silicon substrate have stronger adhesive force, and can be used as a reliable substrate of a superlattice device.
The vanadium dioxide/niobium dioxide superlattice film growing on the monocrystalline alumina substrate is a core functional area of the device, the monocrystalline vanadium dioxide film and the monocrystalline niobium dioxide film are films grown by a pulse laser deposition method (PLD), and the thickness of each layer of the monocrystalline vanadium dioxide film or the monocrystalline niobium dioxide film is 1-4 nm. One layer of single crystal vanadium dioxide film and one layer of single crystal niobium dioxide film form one period of the superlattice, and the period number of the superlattice film is preferably 2~5. In the superlattice film, the bottom layer can be a single crystal vanadium dioxide film or a single crystal niobium dioxide film. The length of a superlattice plane channel region between the two electrodes is preferably 50-100 nm.
The invention also provides a preparation method of the superlattice Mott phase change device with the adjustable phase change temperature, which comprises the following steps of:
1) Preparing a monocrystalline alumina substrate on a monocrystalline silicon substrate by a pulsed laser deposition method;
2) Growing a single crystal vanadium dioxide film and a single crystal niobium dioxide film (the bottom layer can be the single crystal vanadium dioxide film or the single crystal niobium dioxide film) on a single crystal alumina substrate alternately by a pulse laser deposition method, and growing a plurality of periods by taking a layer of the single crystal vanadium dioxide film and a layer of the single crystal niobium dioxide film as one period;
3) The electrodes are prepared on the top layer of the single-crystal vanadium dioxide film or the single-crystal niobium dioxide film, the geometric figures of the electrodes are generally defined by photoetching, and then metal electrodes are grown by electron beam evaporation.
In the step 2), the phase transition temperature of the device is adjusted by adjusting the thickness ratio of the single-crystal vanadium dioxide film to the single-crystal niobium dioxide film in each period, and the thickness ratio of the two films is NbO in consideration of the thickness of the single-layer film being 1 to 4 nm 2 :VO 2 = 1:4 ~ 4:1。
In the specific implementation, firstly, a layer of single crystal vanadium dioxide (or niobium dioxide) film with the thickness of 1-4 nm grows on a single crystal alumina substrate by a Pulse Laser Deposition (PLD) method, then, a layer of single crystal niobium dioxide (or vanadium dioxide) film with the thickness of 1-4 nm grows by the PLD method again, and two layers of single crystal films form one period of a superlattice; the above process is repeated 2~5 times to produce a superlattice film with cycle number 2~5. The superlattice thin film obtained by the method not only can effectively fuse the characteristics of two components in the superlattice thin film, but also introduces a plurality of crystal interfaces with stress, so that the phase transition temperature which is obviously different from the original components, namely vanadium dioxide and niobium dioxide, is hopeful to be obtained, as shown in figure 3, and the superlattice thin film is adaptive to the working temperature of an integrated circuit chip. Finally, a patterned electrode is prepared on the surface of the superlattice film by photoetching, a material with strong adhesion is generally selected as a lower electrode, and a material with low resistivity is selected as an upper electrode to be combined into a composite electrode, preferably a titanium/platinum (Ti/Pt) composite electrode, wherein the bottom titanium electrode is used as an adhesion layer to stabilize the connection between the superlattice film and the metal electrode, and the top platinum electrode is mainly used for improving the conductivity of the electrode. A superlattice plane channel region is arranged between the two electrodes, the length of the superlattice plane channel region is preferably 50-100 nm, joule heat generated by voltage between the two electrodes can cause temperature rise of a superlattice material in the channel region and Mott phase change, and therefore resistance of the channel region is remarkably changed. In addition, by adjusting the parameters of the proportion, the thickness and the like of the two components in each period of the superlattice film, the superlattice film disclosed by the invention is expected to realize the large-amplitude adjustment of the phase transition temperature, so that the superlattice film is suitable for various working environments. If the phase transition temperature of the whole superlattice film is higher and is close to pure niobium dioxide, the thickness of the niobium dioxide film in each superlattice period is reduced, and meanwhile, the thickness of the vanadium dioxide film is increased, so that the phase transition temperature of the whole superlattice film is changed towards the direction closer to vanadium dioxide, namely, the phase transition temperature is reduced; otherwise, the thickness of the niobium dioxide is increased, and the thickness of the vanadium dioxide is reduced to increase the integral phase transition temperature.
The invention provides a superlattice Mott phase-change device with adjustable phase-change temperature, wherein a superlattice film obtained by alternately growing vanadium dioxide and niobium dioxide single crystal films on an alumina substrate through a PLD (programmable logic device) method can effectively fuse the phase-change characteristics of two materials, and a plurality of crystal interfaces with stress introduced into the superlattice can influence the phase-change temperature of the materials, so that the superlattice device structure provided by the invention is expected to adjust the phase-change temperature of the Mott material to a range matched with the working environment of an integrated circuit chip. Compared with the traditional mode of adjusting the phase transition temperature by ion doping, the method can provide a larger phase transition temperature adjusting range by changing the specific structural parameters of the superlattice device, can greatly reduce the energy consumption in the Mott device process, can ensure the normal and stable working effect of the Mott device in an integrated circuit chip, and has important significance for further development and wider application of neuromorphic devices.
Drawings
FIG. 1 is a schematic diagram of a vertical structure of a phase change temperature adjustable superlattice Mott phase change device according to the invention;
FIG. 2 is a schematic plane structure diagram of a phase-change temperature-adjustable superlattice Mott phase-change device according to the invention;
in FIGS. 1 and 2, 1-single crystal silicon substrate, 2-single crystal alumina substrate, 3-single crystal VO 2 Thin film, 4-single crystal NbO 2 A thin film, a 5-titanium electrode, a 6-platinum electrode, and a 7-superlattice channel region.
FIG. 3 is a schematic diagram of the electrical characteristics of the phase change temperature adjustable superlattice Mott phase change device.
Detailed Description
In order to more clearly illustrate the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail by embodiments with reference to the accompanying drawings. The description herein is intended to be illustrative of the invention and is not intended to be limiting.
According to the superlattice Mott phase change device with the adjustable phase change temperature, the two single crystal Mott phase change materials are alternately grown, a certain stress is introduced at the material interface, the phase change characteristics of the two materials are effectively fused, so that the phase change temperature of the device is adjusted to a proper interval, the energy consumed in the phase change process of the device can be effectively reduced, the working effect of the device under the high-temperature condition of a circuit is ensured, and the superlattice Mott phase change device has important significance for further development and wider application of a nerve morphological device and a brain-like computing system based on the Mott materials.
Fig. 1 is a schematic view showing a vertical structure of the superlattice device according to the present embodiment, the device is grown entirely on a single crystal alumina substrate 2, and the device body is composed of a superlattice thin film and a platinum-titanium composite electrode. The lattice structure of the single crystal alumina has higher matching degree with vanadium dioxide and niobium dioxide, so that enough adhesive force can be provided for the superlattice film; meanwhile, the growth quality of each layer of single crystal Mott material can be ensured by the high-quality single crystal alumina substrate. The superlattice film on the upper part of the substrate is a core functional region of the device, the superlattice film is obtained by alternately growing two components of single-crystal vanadium dioxide and single-crystal niobium dioxide for a plurality of periods, and the phase change temperature of the device can be adjusted in a large range by adjusting parameters such as the thickness, the proportion and the like of the two components in each period of the superlattice film. The graphical platinum-titanium composite electrode on the top of the superlattice film determines the geometrical characteristics of the device such as the length and the width of a channel, and the overall conductance level of the device can be adjusted by adjusting the geometrical characteristics of the channel. The specific preparation process of the superlattice device mainly comprises the following steps:
(1) Preparing a single crystal alumina substrate 2 having a thickness of 50 nm on a single crystal silicon substrate 1 by a pulse laser deposition method;
(2) Growing a single crystal vanadium dioxide film 3 with the thickness of 2 nm on the single crystal alumina substrate 2 by a pulse laser deposition method;
(3) Growing a monocrystal niobium dioxide film 4 with the thickness of 2 nm on the monocrystal vanadium dioxide film 3 by a pulse laser deposition method;
(4) Repeating the steps (2) and (3), and growing a layer of single crystal vanadium dioxide film and a layer of single crystal niobium dioxide film for one period until 5 periods grow;
(5) Photoetching and defining a top electrode geometric figure;
(6) Growing a platinum-titanium composite electrode by electron beam evaporation, wherein the bottom of the platinum-titanium composite electrode is 5 nm, and the top of the platinum-titanium composite electrode is 10 nm.
FIG. 2 is a schematic plane structure diagram of the phase-change temperature-adjustable superlattice Mott phase-change device. The geometric features of the device electrodes are defined by photolithography and grown by electron beam evaporation. The electrode is made of two metals of titanium and platinum, wherein the titanium metal film in direct contact with the superlattice film can provide enough adhesion, and the metal platinum on the upper part can effectively reduce the resistivity of the electrode. A superlattice channel region 7 is arranged between the two electrodes, the length of the superlattice channel region is 50 nm, and the width of the superlattice channel region is 500 nm; under the induction of an external voltage, mott phase transformation of the superlattice material in the channel region can occur, so that obvious resistance change is caused.
FIG. 3 is a schematic diagram of the electrical characteristics of the phase-change temperature adjustable superlattice Mott phase-change device. In the figure, the solid line shows the phase change process of the vanadium dioxide and niobium dioxide single crystal films when the material temperature changes, and the dotted line shows the phase change process of the superlattice device under different material proportions. As shown in FIG. 3, by adjusting the ratio of the two components in each period of the superlattice (by adjusting the thickness of the film, e.g., two)The thickness ratio of the film is NbO 2 :VO 2 Change in the range of = 1:4-4:1), the phase transition temperature of the superlattice device can be adjusted in a large range; when the proportion of vanadium dioxide in each superlattice period is increased, the phase change temperature of the superlattice device is closer to the phase change temperature (-340K) of pure vanadium dioxide; and when the proportion of the niobium dioxide is higher than that of the vanadium dioxide, the phase transition temperature of the superlattice device is closer to the phase transition temperature of pure niobium dioxide (-1080K).
The invention provides a superlattice Mott phase change device with a phase change temperature capable of being adjusted in a large range. Compared with the traditional mode of adjusting the phase transition temperature by ion doping, the method can provide a larger phase transition temperature adjusting range by changing the proportion of two components in each period of the superlattice film, can greatly reduce the energy consumption in the Mott device process, can ensure the normal and stable working effect of the Mott device in an integrated circuit chip, and has important significance for further development and wider application of neuromorphic devices.
The above embodiments are only intended to illustrate the technical solution of the present invention and not to limit the same, and a person skilled in the art can modify the technical solution of the present invention or substitute the same without departing from the spirit and scope of the present invention, and the scope of the present invention should be determined by the claims.
Claims (10)
1. A superlattice Mott phase change device with adjustable phase change temperature is characterized by comprising a single crystal alumina substrate and a superlattice film formed by alternately laminating a plurality of layers of single crystal vanadium dioxide films and single crystal niobium dioxide films on the single crystal alumina substrate, wherein device electrodes are positioned on the superlattice film, and a superlattice plane channel region is arranged between the two electrodes.
2. The adjustable phase transition temperature superlattice Mott phase change device as claimed in claim 1 wherein said single crystal vanadium dioxide film and single crystal niobium dioxide film are films grown by pulsed laser deposition.
3. The superlattice Mott phase change device with the adjustable phase change temperature as claimed in claim 1, wherein the thickness of each layer of the single crystal vanadium dioxide thin film or the single crystal niobium dioxide thin film is 1 to 4 nm.
4. The adjustable phase transition temperature superlattice Mott phase change device as claimed in claim 1 wherein a layer of single crystal vanadium dioxide film and a layer of single crystal niobium dioxide film form a period of the superlattice, the number of periods of said superlattice film being 2~5.
5. The superlattice Mott phase change device with adjustable phase change temperature according to claim 1, wherein a lowermost layer of the superlattice thin films is a single crystal vanadium dioxide thin film or a single crystal niobium dioxide thin film.
6. The superlattice Mott phase change device as claimed in claim 1 wherein said electrode is a titanium/platinum composite electrode.
7. The superlattice Mott phase change device with the adjustable phase change temperature as claimed in claim 1, wherein the length of the superlattice planar channel region is 50 to 100 nm.
8. A method of making the adjustable phase transition temperature superlattice Mott phase change device as claimed in any one of claims 1~7 comprising the steps of:
1) Preparing a monocrystalline alumina substrate on a monocrystalline silicon substrate by a pulsed laser deposition method;
2) Alternately growing a single crystal vanadium dioxide film and a single crystal niobium dioxide film on a single crystal alumina substrate by a pulse laser deposition method, wherein a layer of single crystal vanadium dioxide film and a layer of single crystal niobium dioxide film are taken as a period and grow for a plurality of periods;
3) And preparing an electrode on the monocrystal vanadium dioxide film or monocrystal niobium dioxide film on the top layer.
9. The method of claim 8 wherein in step 2) the phase transition temperature of the device is adjusted by adjusting the ratio of the thickness of the single crystal vanadium dioxide film to the thickness of the single crystal niobium dioxide film in each cycle.
10. The method of claim 9, wherein the ratio of the thickness of the single crystal vanadium dioxide film to the thickness of the single crystal niobium dioxide film is in the range of 1:4 to 4:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310046225.XA CN115988956B (en) | 2023-01-31 | 2023-01-31 | Superlattice Mott phase-change device with adjustable phase-change temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310046225.XA CN115988956B (en) | 2023-01-31 | 2023-01-31 | Superlattice Mott phase-change device with adjustable phase-change temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115988956A true CN115988956A (en) | 2023-04-18 |
| CN115988956B CN115988956B (en) | 2023-06-02 |
Family
ID=85964675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310046225.XA Active CN115988956B (en) | 2023-01-31 | 2023-01-31 | Superlattice Mott phase-change device with adjustable phase-change temperature |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115988956B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270653A (en) * | 1997-03-27 | 1998-10-09 | Sony Corp | Oxide lamination structure and its manufacture and ferroelectric non-volatile memory |
| CN102634758A (en) * | 2012-04-26 | 2012-08-15 | 南京理工大学 | High-transmittivity vanadium-based multi-layer superlattice film and preparation method thereof |
| CN104032278A (en) * | 2014-06-12 | 2014-09-10 | 中国科学院上海技术物理研究所 | Method for preparing vanadium dioxide film |
| CN104465914A (en) * | 2014-12-03 | 2015-03-25 | 山东浪潮华光光电子股份有限公司 | LED structure with barrier height gradient superlattice layer and manufacturing method thereof |
| CN106756793A (en) * | 2017-01-10 | 2017-05-31 | 河北大学 | A kind of regulation and control method of nickel acid neodymium base superlattices phase change film material and its preparation and metal-insulator transition temperature |
| CN109031707A (en) * | 2018-08-22 | 2018-12-18 | 电子科技大学 | A kind of the vanadium dioxide Terahertz modulator and its regulation method of vertical structure |
| CN110926604A (en) * | 2019-12-03 | 2020-03-27 | 合肥工业大学 | Photo-thermal detection unit based on chromium-niobium co-doped vanadium dioxide epitaxial film |
| US20220302385A1 (en) * | 2021-03-18 | 2022-09-22 | Kioxia Corporation | Resistance change device and storage device |
| CN115117177A (en) * | 2022-06-24 | 2022-09-27 | 中国科学院物理研究所 | Neuromorphic photoelectric sensor and preparation and regulation method thereof |
| WO2023276576A1 (en) * | 2021-06-30 | 2023-01-05 | 富士フイルム株式会社 | Optical modulation element, optical shutter, and radiative cooling structure |
-
2023
- 2023-01-31 CN CN202310046225.XA patent/CN115988956B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10270653A (en) * | 1997-03-27 | 1998-10-09 | Sony Corp | Oxide lamination structure and its manufacture and ferroelectric non-volatile memory |
| CN102634758A (en) * | 2012-04-26 | 2012-08-15 | 南京理工大学 | High-transmittivity vanadium-based multi-layer superlattice film and preparation method thereof |
| CN104032278A (en) * | 2014-06-12 | 2014-09-10 | 中国科学院上海技术物理研究所 | Method for preparing vanadium dioxide film |
| CN104465914A (en) * | 2014-12-03 | 2015-03-25 | 山东浪潮华光光电子股份有限公司 | LED structure with barrier height gradient superlattice layer and manufacturing method thereof |
| CN106756793A (en) * | 2017-01-10 | 2017-05-31 | 河北大学 | A kind of regulation and control method of nickel acid neodymium base superlattices phase change film material and its preparation and metal-insulator transition temperature |
| CN109031707A (en) * | 2018-08-22 | 2018-12-18 | 电子科技大学 | A kind of the vanadium dioxide Terahertz modulator and its regulation method of vertical structure |
| CN110926604A (en) * | 2019-12-03 | 2020-03-27 | 合肥工业大学 | Photo-thermal detection unit based on chromium-niobium co-doped vanadium dioxide epitaxial film |
| US20220302385A1 (en) * | 2021-03-18 | 2022-09-22 | Kioxia Corporation | Resistance change device and storage device |
| WO2023276576A1 (en) * | 2021-06-30 | 2023-01-05 | 富士フイルム株式会社 | Optical modulation element, optical shutter, and radiative cooling structure |
| CN115117177A (en) * | 2022-06-24 | 2022-09-27 | 中国科学院物理研究所 | Neuromorphic photoelectric sensor and preparation and regulation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115988956B (en) | 2023-06-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61216489A (en) | Thin film solar battery | |
| CN104795493A (en) | Nanowire array based memristor and manufacturing method thereof | |
| JP5525090B2 (en) | Method for producing multi-element nanowires | |
| KR101304286B1 (en) | A method for producing polycrystalline layers | |
| CN109728162B (en) | Phase change film, phase change memory cell, preparation method of phase change memory cell and phase change memory | |
| CN115988956A (en) | Superlattice Mott phase change device with adjustable phase change temperature | |
| CN113078262B (en) | Memristor with superlattice-like material functional layer and preparation method thereof | |
| CN109065659A (en) | N doping tungsten oxide heterojunction solar battery and preparation method thereof | |
| CN113725006A (en) | High-voltage-resistance low-leakage silicon-based AlN capacitor and preparation method thereof | |
| CN104254925B (en) | The forming method of zinc oxide concaveconvex structure and utilize its manufacture method of solaode | |
| JPH01307278A (en) | Solar cell | |
| CN209266413U (en) | A kind of gallium oxide semiconductor Schottky diode | |
| CN110289350A (en) | One kind is based on metalloporphyrin hetero-junctions memristor and its preparation method and application | |
| JPH07258881A (en) | Production of cuinse2 film | |
| CN114242888A (en) | Cu-doped TixOyThin film memristor and preparation method thereof | |
| KR101281052B1 (en) | Preparation method of cigs thin film for solar cell using simplified co-evaporation and cigs thin film for solar cell prepared by the same | |
| CN106486560A (en) | Plasma drop epitaxial GaAs quantum dot solar battery and its manufacture method | |
| CN106591789B (en) | A method of directly preparing flannelette AZO film | |
| WO2022032784A1 (en) | Array substrate, array substrate manufacturing method, and display panel | |
| CN209016075U (en) | A kind of silicon based hetero-junction solar battery | |
| CN113206194A (en) | Self-rectifying memristor, preparation method and application thereof | |
| Li et al. | The Preparation Method, Resistive Switching Mechanism and Application Prospects of Memristor | |
| KR101700240B1 (en) | Manufacturing method of light trapping structrure using anodizing process and light trapping structure | |
| CN117529222B (en) | Topological phase change memristor with controllable conductive wire forming area and preparation method thereof | |
| TWI492399B (en) | Method for manufacturing a thin film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |