CN109031707A - A kind of the vanadium dioxide Terahertz modulator and its regulation method of vertical structure - Google Patents
A kind of the vanadium dioxide Terahertz modulator and its regulation method of vertical structure Download PDFInfo
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- CN109031707A CN109031707A CN201810962611.2A CN201810962611A CN109031707A CN 109031707 A CN109031707 A CN 109031707A CN 201810962611 A CN201810962611 A CN 201810962611A CN 109031707 A CN109031707 A CN 109031707A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of vanadium dioxide Terahertz modulators of vertical structure, it is related to a kind of design of Terahertz modulator vertical structure based on vanadium dioxide film, its purpose is to provide a kind of preparation method of the vanadium dioxide modulator of automatically controlled triggering, the traditional vanadium dioxide modulator switch speed of solution is slow, needs the problems such as add-on device.The Terahertz modulator of the vertical structure is made of medium substrate, bottom transparent conductive film, vanadium dioxide film and top layer electrode.Wherein medium substrate and bottom conductive film are all to THz wave highly transparent, while conductive film facilitates the preparation of upper layer vanadium dioxide film as substrate.Device is by triggering the vanadium dioxide film phase transformation of middle layer to realize Terahertz wave modulation to the bottom conductive film and top layer electrode application driving voltage in Vertical Structure.The present invention have insertion loss is low, speed is fast, low in energy consumption, integrated level is high, advantages of simple structure and simple, be conducive to application of the vanadium dioxide film on high speed Terahertz modulation device.
Description
Technical field
The invention belongs to Terahertz applied technical fields, and in particular to a kind of vanadium dioxide modulator of vertical structure and its
Regulation method realizes that high speed, efficient THz wave are modulated by electricity regulation.
Background technique
Terahertz is a kind of electromagnetic wave of frequency range in 0.1~10THz (wavelength is 3000~30 μm) particular frequency bands, just
Benefit in microwave and it is infrared between electric field spectral range.It has large capacity, high security, high transfer rate, height anti-interference
Many excellent characteristics such as property and strong penetrability, biomedicine, high-speed communication, astronomy, military affairs, security, detection imaging etc. with
And relevant interdisciplinary field has broad application prospects.Demand due to modern society to wireless communication is increasingly compeled
It cuts, therefore Terahertz communication system has recently become a research hotspot.It realizes Terahertz high speed, broadband connections, closes the most
The device of key is Terahertz modulation device.
Vanadium dioxide (VO2) it is a kind of material with insulator-metal state phase-change characteristic, in environmental stimuli (temperature, light
According to, electric field, stress) under can from monocline insulation posture (high-impedance state) to quadratic metal state (low resistance state) transformation, in the level-one of crystal
In displacement phase transition, resistivity has the variation of the 2-4 order of magnitude, the parameters such as dielectric constant, magnetic conductivity and microwave, light
Learning even THz wave characteristic can all change as significant invertibity occurs for phase transition process.Specifically, when the state that insulate, terahertz
Hereby wave energy well penetrates VO2Film, when metallic state, THz wave is by VO2Film reflector.More importantly VO2Phase speed change
Degree is exceedingly fast, and pumps VO with femtosecond laser2When film, the response time is less than 1ps.Therefore, VO2It is a kind of very promising terahertz
Hereby functional material, especially in terms of High Speed Modulation device.
Past is based on VO2The research of modulation device be concentrated mainly on thermal excitation metal-insulator phase transition.But it is practical
The study found that heat triggering VO2For thin film phase change since it is desired that carrying out the variation of heating and cooling, the speed for controlling phase transformation is slow, and
It undergoes phase transition later temperature cooling and is also required to a very long process, be unfavorable for operation repeatedly, while needing additional heating dress
It sets, it is complicated for operation.These are significantly limited based on VO2Terahertz modulator development.On the other hand, using automatically controlled triggering
VO2Phase transformation had been to be concerned by more and more people with the research for realizing adjustable electronic device.By giving VO2Film applies voltage,
To induce electrically driven (operated) metal-insulator phase transition (E-MIT), electron correlation effect therewith can bring ultrafast switch speed
Rate, but it is based on automatically controlled triggering VO2Up to the present the modulation device structure of phase transformation extremely lacks.And it is existing using electricity
Drive VO2Structure be mostly lateral voltage formula planer device structure (current direction is parallel to film surface).The type knot
The device of structure all suffers from the problem of phase transformation threshold voltage excessively high (up to hundreds of volts), and which results in device high energy consumption issues.
Summary of the invention
The purpose of the present invention is to provide a kind of vanadium dioxide Terahertz modulators of vertical structure, can pass through automatically controlled side
Formula high speed efficiently modulates THz wave, to solve that traditional vanadium dioxide modulation device switching speed is slow, needs add-on device
And electric drive VO2The disadvantages of structural phase transition threshold voltage is excessively high.
For achieving the above object, present invention employs following technical solutions: a kind of vanadium dioxide of vertical structure is too
Hertz modulator, including medium substrate, the medium substrate is by constituting the transparent material of THz wave.In the medium substrate
Upper that one layer of bottom conductive film is grown or shifted by technique, the bottom conductive film is by the material transparent to THz wave
It constitutes, then grows vanadium dioxide film layer on bottom conductive film, finally made on the vanadium dioxide film layer prepared
Top-level metallic electrode.Wherein, the vanadium dioxide film THz wave incident as functional material modulation, bottom conductive film and top
Layer electrode is as upper/lower electrode load-modulate voltage.
The bottom conductive film should have good electric conductivity and very high Terahertz transmitance (>=85%).Make
Be it is preferred, can choose graphene film or DMSO doping one of PEDOT:PSS film, meanwhile, conductive film is as lining
Bottom should facilitate the preparation of face vanadium dioxide film thereon.It is further preferred that bottom conductive film passes through chemical vapor deposition
Or spin coating proceeding directly grows or is transferred in medium substrate.
The vanadium dioxide film is undoped with vanadium dioxide film or doped vanadium dioxide film, the doping dioxy
It is one of W, Mo, Ti, Nb, Ta or Al or a variety of for changing the doped chemical of vanadium film.Vanadium dioxide film has excellent
Metal-insulator phase transition characteristic can change the transmission performance of THz wave significantly.It is further preferred that vanadium dioxide is thin
Film is obtained by magnetron sputtering or pulse laser deposition.It is further preferred that vanadium dioxide film is with a thickness of 20-500nm, the thickness
The variation that lower vanadium dioxide film conductivity can occur 100-10000 times in the phase transition process from insulator to metal is spent,
Conductivity is 1-100S/m when the state that wherein insulate, and conductivity is 10000-1000000S/m when metallic state.
Top layer electrode is made of one of gold, silver, platinum or aluminium, copper, titanium, with a thickness of 100-500nm, electrode size
The principle of selection is that its ratio shared by vanadium dioxide thin surface wants small, guarantees that THz wave before modulation can positive normal open
Device is crossed, electrode covers the ratio on vanadium dioxide film surface between 1%-20%.Such as 200 μm of 200 μ m can be used
Size.
A kind of regulation method of the vanadium dioxide Terahertz modulation device of vertical structure: by the bottom in Vertical Structure
Layer transparent conductive film and top layer electrode apply driving voltage, trigger the vanadium dioxide film phase transformation of middle layer to realize Terahertz
Wave modulation.
Preferably, by VO2The conductive membrane layer and metal electrode of film upper and lower level apply driving voltage, and triggering is intermediate
The VO of layer2Metal-insulator phase transition occurs for film, final to realize to Terahertz wave modulation.VO2Film is before phase change in height
The insulation state of resistance, carrier is few, small to the obstruction of THz wave, and transmitance is very high.When driving voltage is more than triggering VO2Film phase
After variable threshold threshold voltage, VO2Film crystal structure is changing into metallic state from monocline to rutile structure, and conductance increased dramatically, current-carrying
Son increases, and enhances the reflectivity of Terahertz, to cause the obvious decrease of THz wave transmitance.It should be noted that because
VO2The phase transition process of film is reversible, after driving voltage decreases below threshold voltage, VO2Film can be re-converted into absolutely
Edge state is in high transmittance state to THz wave, therefore the modulating characteristic of modulator is also reversible.
Due to VO2Thin-film electro triggers the ultrafast electronic switch effect of phase transformation, and the switch time of device can compare thermal induced phase transition
Fast several orders of magnitude.In general, the relaxation time of thermal induced phase transition is 10-6S, and in the case where other conditions are constant, electricity touching
The relaxation time is about 2 × 10 when sending out phase transformation-9s.Therefore, compared with heat triggers vanadium dioxide device, electricity triggering vanadium dioxide device
Phase velocity is fast, and the response time is shorter.It meanwhile in the spacing in rectilinear device architecture of the invention between two electrodes being micro-
In metrical scale range, so that lesser threshold voltage only be needed just to be enough to make VO2It undergoes phase transition, this substantially reduces switch time.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
1, it in the present invention, is worked by automatically controlled without additional illumination, heating equal excitation, this is for device
Miniaturization, practical and mass production have very big advantage.
2, in the present invention, vanadium dioxide modulating speed is fast, triggers VO by electricity2Film is realized between insulation and metallic state
Phase transformation, the switch time of device are expected to reach nanosecond order.
3, in the present invention, the spacing in vertical structure between two electrodes is in micro-scaled range, to only need smaller
Threshold voltage be just enough to make VO2It undergoes phase transition, this substantially reduces switch time.
4, in the present invention, VO is utilized2Film is as modulation function layer, because of VO2Phase transformation in very wide Terahertz frequency range
There is apparent modulating action, so the broadband effect of device is great significant.
5, in the present invention, it is utilized as the conductive film (graphene) transparent to THz wave as hearth electrode, it can be to avoid
VO2Stress between film and previous metal film electrode improves VO2The quality of film, operational process of craft is simple, requires
It is low.
6, in the present invention, substrate and conductive film are all that ensure that THz wave to the material of THz wave highly transparent
Before modulation can be normal through device, insertion loss is low.
7, the present invention is for VO2Application of the film on high speed Terahertz modulation device is of great significance.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, in which:
Fig. 1 is the structural schematic diagram of the vanadium dioxide Terahertz modulator of vertical structure in the embodiment of the present invention；
Fig. 2 is the top view of the vanadium dioxide Terahertz modulator of vertical structure in the embodiment of the present invention；
Fig. 3 is the graph of simulation results figure of the vanadium dioxide Terahertz modulator of vertical structure in the embodiment of the present invention；
Fig. 4 is variation characteristic curve of the resistance of vanadium dioxide film in the embodiment of the present invention after before phase change；
Fig. 5 is the switch time schematic diagram that vanadium dioxide film triggers phase transformation in electricity in the embodiment of the present invention；
Fig. 6 is that the distance between two electrodes show in the vanadium dioxide Terahertz modulator of vertical structure in the embodiment of the present invention
It is intended to.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
The technical solution of the present invention is as follows:
A kind of vanadium dioxide Terahertz modulator of vertical structure, including the medium substrate 1 being sequentially distributed from top to bottom, bottom
Layer conductive film 2, vanadium dioxide film 3 and top layer electrode 4；The medium substrate 1 and bottom conductive film 2 are by THz wave
Transparent material is made.
Preferably, medium substrate 1 is made of High Resistivity Si or sapphire.
Preferably, bottom conductive film 2 adulterates PEDOT:PSS film preparation by graphene film or DMSO.
It is further preferred that bottom conductive film 2 is directly grown or is shifted by chemical vapor deposition or spin coating proceeding
Onto medium substrate.
Preferably, vanadium dioxide film 3 is undoped with vanadium dioxide film or doped vanadium dioxide film, the doping
The doped chemical of vanadium dioxide film is one of W, Mo, Ti, Nb, Ta or Al or a variety of.
It is further preferred that vanadium dioxide film 3 passes through magnetron sputtering or pulse laser deposition preparation.
It is further preferred that vanadium dioxide film 3 is with a thickness of 20-500nm.
Preferably, top layer electrode 4 is made of one of gold, silver, platinum, aluminium, copper or titanium, with a thickness of 100-500nm.
The size of electrode ratio shared by lower layer's vanadium dioxide film surface is small, guarantees that THz wave before modulation can positive normal open
Cross device.
The present invention also provides the regulation methods of the vanadium dioxide Terahertz modulator of above-mentioned vertical structure: by rectilinear
Bottom transparent conductive film and top layer electrode in structure apply driving voltage, and the vanadium dioxide film phase transformation for triggering middle layer comes
Realize Terahertz wave modulation.
Preferably, after driving voltage is more than phase transformation threshold voltage, vanadium dioxide film is converted into metallic state, device pair
THz wave is in low transmission state；After driving voltage decreases below threshold voltage, vanadium dioxide film can turn again
Insulation state is turned to, device is in high transmittance state to THz wave, and the conversion process is reversible.
Referring to Fig. 1 to Fig. 6, by specific embodiment, further description of the technical solution of the present invention:
Fig. 1 is a kind of structural schematic diagram of the vanadium dioxide Terahertz modulator of vertical structure of the present invention.Wherein 1 is medium
Substrate, 2 be bottom conductive membrane layer, and 3 be vanadium dioxide film, and 4 be top layer electrode, and 5 be potentiostat.First in medium substrate
It is grown by technique or shifts one layer of bottom conductive film, then prepare vanadium dioxide film layer on bottom conductive film, most
Top layer electrode is made on the vanadium dioxide film layer prepared afterwards, so that a kind of vanadium dioxide Terahertz of vertical structure be made
Modulator.It is worth noting that, as shown in Fig. 2, in order to guarantee that THz wave before modulation can be normal through device, VO2
The metal electrode of film upper surface ratio shared by vanadium dioxide thin surface wants small.
More specifically, the present embodiment is vertical with High Resistivity Si-transfer graphene film-vanadium dioxide film-gold electrode
Structure prepares Terahertz modulator, specific process step are as follows:
1. high resistant silicon base is cleaned.
When starting the cleaning processing to high resistant silicon base, it the steps include: for high resistant silicon base to be put into ultrasound 10- in acetone
30min removes surface impurity, is and then put into ultrasound 10-30min in dehydrated alcohol, removes residual acetone, places into deionization
It is cleaned by ultrasonic 10-30min in water, removes residual ethanol, be finally putting into dehydrated alcohol and save, using preceding with being dried with nitrogen.
2. graphene film shifts.
Firstly, the copper sheet for the suitable size of copper sheet clip that graphene film growth is completed, uniformly smears PMMA in inside
Organic glass reagent facilitates graphene film to be kept completely separate with copper-based bottom.Secondly, being put into 50 milliliter 0.10% of persulfuric acid
It is impregnated in ammonium salt solution and removes copper-based bottom.Ammonium persulfate solution will not introduce more compared with the chlorination ferron of same type, after reaction
Then remaining impurity, the ammonium persulfate for remaining in film surface is cleaned with deionized water.Then, with silicon substrate hold out containing
PMMA graphene film uniformly fills PMMA reagent for the second time, prevents film breaks.One is impregnated finally, being put into acetone soln
It fixes time, is taken out after completely removing surface PMMA.Finally, being successfully transferred out of graphene film in high resistant silicon base.
3. vanadium dioxide film is grown.
Vanadium dioxide film is prepared using magnetically controlled DC sputtering in the high resistant silicon base for displaced above graphene film.
Background vacuum is less than 1.0 × 10-3Pa, substrate temperature is 60 DEG C when deposition.Using metal V target as sputtering target material, it is passed through argon gas
Pre-sputtering 25min is carried out under vacuum conditions, and sputtering current is 0.34 ± 0.01A, may be oxidized above target to remove
Part and other pollutants etc..Oxygen is then passed to, under oxygen and argon gas mixed atmosphere, carries out reactive sputter-deposition, at this time
Argon flow be 98sccm, oxygen flow is 2sccm, sputtering time 30min.After sputtering, high temperature is carried out under oxygen atmosphere
Annealing, oxygen flow 15sccm, 425 DEG C of annealing temperature, annealing time 30min.After the completion of annealing, under vacuum conditions certainly
So it is cooled to room temperature.
4. prepared by gold electrode.
By electron beam evaporation in VO2Film surface deposits Au electrode as top electrode, and size is 200 μm of 200 μ m.
The VO that present example prepares2Film has excellent phase transition performance, and sudden change of resistivity can be more than 2-3 number
Magnitude, as shown in Figure 3.Further study VO2The variation of Terahertz transmitance, concrete outcome are as follows: VO before and after thin film phase change2Film
It is small to the obstruction of THz wave because carrier is few in the insulation state for being in high resistant before phase change, so transmitance is very high；Work as VO2
Film crystal structure is changing into metallic state from monocline to rutile structure, and conductivity increased dramatically, and carrier increases, to Terahertz
Reflectivity increase, to cause the obvious decrease of THz wave transmitance.These results mean VO2Film is applied to height
The THz wave technology of effect modulation is feasible.
Graphene in present example, can be to avoid VO as substrate2Between film and previous metal film electrode
Stress, raising prepare VO2The quality of film.Result in Fig. 3 also demonstrates the VO on graphene film2Film has
Excellent phase transition performance.In addition, graphene film is higher than 90% in the transmitance of terahertz wave band, guarantee THz wave in modulation
It is preceding to be in high transmittance state in the devices, reduce the insertion loss of device.
Fig. 4 gives the simulation calculated result of modulator in the present embodiment.The result shows that in 1.9-7THz frequency range,
By to the VO in the present invention2The conductive membrane layer and metal electrode of film two sides apply driving voltage, trigger the VO of middle layer2
Metal-insulator phase transition occurs for film, and the modulation amplitude of modulator can achieve 70% or more.Because upper electrode size exists
VO2Ratio very little shared by the surface of film, so THz wave before modulation can be normal through device.In VO2In exhausted
When edge body state, incident THz wave passes through other regions (area other than electrode structure of film with high transmittance state
Domain).Meanwhile in the VO of excitation middle layer2Film sends out phase transition process, and the region of phase transformation not merely occurs below metal electrode
Region area, phase transformation can soon be diffused into other regions of film, so that the transmitance of THz wave be made to substantially reduce.Together
Shi Yinwei VO2The metal-insulator phase transition of film has apparent modulating action in very wide Terahertz frequency range, so device
Broadband effect it is also great significant.
When the modulation rate of modulator in the present invention depends primarily on the vanadium dioxide film electricity trigger switch of functional layer
Between.According to VO2Thin-film electro triggers the ultrafast electronic switch effect theory of phase transformation, and the switch time of electricity triggering phase transformation can be than thermotropic
Mutually become faster several orders of magnitude, belongs to ultrafast magnitude.When result of study discovery electricity triggering phase transformation the relaxation time can achieve 2 ×
10-9S (refering to Fig. 5).Therefore, it is based on VO2The electric trigger device of film must have the characteristics that " high speed ".
It is existing to use electric drive VO2Structure be mostly that (current direction is parallel for the planer device structure of lateral voltage formula
In film surface).The device of the type structure all suffers from the problem of phase transformation threshold voltage excessively high (up to hundreds of volts).It can by Fig. 6
Know, the present invention in vertical structure device (current direction is perpendicular to film surface) in, the spacing between two electrodes be
200nm or so (VO2The thickness of film), so that lesser threshold voltage (three ten-day period of hot season magnitude) only be needed just to be enough to make VO2It undergoes phase transition,
This can substantially increase the service life of device and lower whole power consumption.
Therefore, the device based on vertical structure in the present invention is with insertion loss is low, speed is fast, low in energy consumption, integrated level
High, advantages of simple structure and simple, has wider application value on high speed Terahertz modulation device.
Certainly, each layer structure in the present invention can also be using the material and structure of other similar effects, as substrate can
To use sapphire, conductive film can adulterate PEDOT:PSS film with DMSO, and intermediate functional layer can use doped vanadium dioxide
Film, top layer electrode can be using interdigital structures etc..Therefore, the foregoing is merely illustrative of the preferred embodiments of the present invention, not
To limit the present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all
It is included within protection scope of the present invention.
Claims (10)
1. a kind of vanadium dioxide Terahertz modulator of vertical structure, it is characterised in that: including Jie being sequentially distributed from top to bottom
Matter substrate (1), bottom conductive film (2), vanadium dioxide film (3) and top layer electrode (4)；The medium substrate (1) and bottom
Conductive film (2) is by being made the transparent material of THz wave.
2. a kind of vanadium dioxide Terahertz modulator of vertical structure according to claim 1, it is characterised in that: given an account of
Matter substrate (1) is made of High Resistivity Si or sapphire.
3. a kind of vanadium dioxide Terahertz modulator of vertical structure according to claim 1, it is characterised in that: the bottom
Layer conductive film (2) adulterates PEDOT:PSS film preparation by graphene film or DMSO.
4. a kind of vanadium dioxide Terahertz modulator of vertical structure according to claim 3, it is characterised in that: the bottom
Layer conductive film (2) is directly grown or is transferred in medium substrate by chemical vapor deposition or spin coating proceeding.
5. a kind of vanadium dioxide Terahertz modulator of vertical structure according to claim 1, it is characterised in that: described two
Vanadium oxide film (3) is undoped vanadium dioxide film or doped vanadium dioxide film, the doped vanadium dioxide film
Doped chemical is one of W, Mo, Ti, Nb, Ta or Al or a variety of.
6. a kind of vanadium dioxide Terahertz modulator of vertical structure according to claim 5, it is characterised in that: described two
Vanadium oxide film (3) passes through magnetron sputtering or pulse laser deposition preparation.
7. a kind of vanadium dioxide Terahertz modulator of vertical structure according to claim 5, it is characterised in that: described two
Vanadium oxide film (3) is with a thickness of 20-500nm.
8. a kind of vanadium dioxide Terahertz modulator of vertical structure according to claim 1, it is characterised in that: top layer electricity
Pole (4) is made of one of gold, silver, platinum, aluminium, copper or titanium, and with a thickness of 100-500nm, it is thin that electrode covers vanadium dioxide
The ratio of film surface is between 1%-20%.
9. a kind of regulation method of the vanadium dioxide Terahertz modulator of vertical structure according to claim 1, feature
It is: by triggering middle layer to the bottom transparent conductive film and top layer electrode application driving voltage in Vertical Structure
Terahertz wave modulation is realized in vanadium dioxide film phase transformation.
10. a kind of regulation method of the vanadium dioxide Terahertz modulator of vertical structure according to claim 9, feature
Be: after driving voltage is more than triggering phase transformation threshold voltage, vanadium dioxide film is converted into metallic state, and device is to Terahertz
Wave is in low transmission state；After driving voltage decreases below threshold voltage, vanadium dioxide film can be re-converted into absolutely
Edge state, device are in high transmittance state to THz wave；The conversion process is reversible.
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Cited By (6)
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| CN110221367A (en) * | 2019-07-02 | 2019-09-10 | 电子科技大学 | A kind of Terahertz modulator and its regulation method based on vanadium dioxide film |
| CN110620329A (en) * | 2019-10-18 | 2019-12-27 | 华东师范大学重庆研究院 | Terahertz saturable absorption device for quantum cascade laser |
| CN112011775A (en) * | 2020-08-28 | 2020-12-01 | 电子科技大学 | Preparation method of vanadium oxide film with extremely narrow thermal hysteresis loop applied to THz modulation |
| CN112285952A (en) * | 2020-09-17 | 2021-01-29 | 首都师范大学 | Programmable terahertz memory modulation device and system based on vanadium dioxide |
| CN114665859A (en) * | 2022-03-25 | 2022-06-24 | 电子科技大学 | Pyroelectric cooperative regulation and control infrared light switch based on vanadium dioxide film |
| CN115988956A (en) * | 2023-01-31 | 2023-04-18 | 北京大学 | Superlattice Mott phase change device with adjustable phase change temperature |
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| CN110221367A (en) * | 2019-07-02 | 2019-09-10 | 电子科技大学 | A kind of Terahertz modulator and its regulation method based on vanadium dioxide film |
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| CN112011775A (en) * | 2020-08-28 | 2020-12-01 | 电子科技大学 | Preparation method of vanadium oxide film with extremely narrow thermal hysteresis loop applied to THz modulation |
| CN112285952A (en) * | 2020-09-17 | 2021-01-29 | 首都师范大学 | Programmable terahertz memory modulation device and system based on vanadium dioxide |
| CN112285952B (en) * | 2020-09-17 | 2023-11-24 | 首都师范大学 | Programmable terahertz memory modulation device and system based on vanadium dioxide |
| CN114665859A (en) * | 2022-03-25 | 2022-06-24 | 电子科技大学 | Pyroelectric cooperative regulation and control infrared light switch based on vanadium dioxide film |
| CN114665859B (en) * | 2022-03-25 | 2023-06-06 | 电子科技大学 | Infrared switch based on thermoelectric cooperative regulation and control of vanadium dioxide film |
| CN115988956A (en) * | 2023-01-31 | 2023-04-18 | 北京大学 | Superlattice Mott phase change device with adjustable phase change temperature |
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