CN108345130A - Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching - Google Patents

Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching Download PDF

Info

Publication number
CN108345130A
CN108345130A CN201810148678.2A CN201810148678A CN108345130A CN 108345130 A CN108345130 A CN 108345130A CN 201810148678 A CN201810148678 A CN 201810148678A CN 108345130 A CN108345130 A CN 108345130A
Authority
CN
China
Prior art keywords
phase
change material
impedance matching
material layers
dynamic regulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810148678.2A
Other languages
Chinese (zh)
Other versions
CN108345130B (en
Inventor
施奇武
黄婉霞
朱洪富
朱礼国
李江
杜良辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sichuan University
Original Assignee
Sichuan University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sichuan University filed Critical Sichuan University
Priority to CN201810148678.2A priority Critical patent/CN108345130B/en
Publication of CN108345130A publication Critical patent/CN108345130A/en
Application granted granted Critical
Publication of CN108345130B publication Critical patent/CN108345130B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0102—Constructional details, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009—Materials therefor

Abstract

The present invention provides a kind of efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching.Described device includes substrate, phase-change material layers and phase transformation excitation unit, wherein there is the substrate first surface and second surface away from one another, first surface to be arranged towards the direction of THz wave incidence；The phase-change material layers can be metal phase from insulation phase transition, and be incorporated on the second surface of substrate；The phase transformation excitation unit generates shooting condition so that phase-change material layers are impedance matching condition from insulation phase transition respectively and are changed into metal phase from impedance matching condition, and the impedance matching condition is happened at substrate/phase-change material layers/Air Interface.The method enables phase-change material layers mutually or between metal phase to switch with insulation in impedance matching condition using shooting condition, so as to realize that the back wave to THz wave efficiently, efficiently regulate and control, and has excellent electric field amplitude modulation depth.

Description

Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching
Technical field
The present invention relates to THz wave amplitude control technique fields, and more specifically, being related to one kind can have efficiently too The Terahertz dynamic regulation device and method of hertz amplitude dynamic regulation effect, even excellent electric field amplitude modulation depth.
Background technology
Terahertz (THz) wave is covered from the infrared wide bandwidth range between microwave frequency band, and passes through Terahertz frequency Spectrum is proved to have many advantages, especially to switching, the intelligent THz devices such as modulator and memory storage device there is weight It acts on.For these equipment, the dynamic manipulation to THz waves is a main problem.Many people attempt using have can The functional material of electrical parameter, including two-dimensional material, phase change oxide, photonic crystal and semiconductor are dimmed to solve this theme.
Specifically, the insulator-metal phase transition feature of typical phase-change material such as vanadium dioxide makes it for active Sizable interest is attracted in terms of the development of photoelectric device.The phase transition process along with oxide electrical properties change dramatically And mutation.Previous research work is mainly to consider the optimization of crystal structure, pattern to the stoichiometry of vanadium dioxide film, To realize that Terahertz transmits the high efficiency regulatory of amplitude in phase transition process.However, by the optimization to material fabrication process, still deposit In the problem that modulating speed is slow, modulation efficiency is low, and it is difficult to improve modulation depth.
Invention content
It is an object of the invention to solve at least one in deficiencies of the prior art.
For example, it is an object of the present invention to solving, Terahertz back wave modulation device modulation efficiency is low, modulating speed At least one of in the problems such as slowly, modulation depth is small.
To achieve the goals above, an aspect of of the present present invention provide it is a kind of based on phase-change material impedance matching efficiently too Hertz dynamic regulation device, the Terahertz dynamic regulation device include that substrate, phase-change material layers and phase transformation excite unit, In, the substrate has first surface and second surface away from one another, and the direction of first surface towards THz wave incidence is set It sets；The phase-change material layers can be metal phase from insulation phase transition, and be incorporated on the second surface of substrate；The phase transformation swashs Bill member generates shooting condition so that phase-change material layers are respectively impedance matching condition and from impedance matching from insulation phase transition State is changed into metal phase, and the impedance matching condition is happened at substrate/phase-change material layers/Air Interface.
In an exemplary embodiment of the efficient Terahertz dynamic regulation device of the present invention, the phase-change material layers The consecutive variations of at least two order of magnitude can occur under shooting condition for conductivity.Preferably, the conductivity energy of phase-change material layers Enough consecutive variations that 3~4 orders of magnitude occur under shooting condition.
In an exemplary embodiment of the efficient Terahertz dynamic regulation device of the present invention, the phase-change material layers Thickness can be controlled in the range of 5nm~2 μm, and the thickness of substrate can be controlled in the range of 0.1~3mm.
In an exemplary embodiment of the efficient Terahertz dynamic regulation device of the present invention, the phase-change material layers can Think vanadium dioxide film, vanadium trioxide film or titanium pentoxide film.For example, the phase-change material layers can be thickness Spend the vanadium dioxide film in 230~300nm ranges.
In an exemplary embodiment of the efficient Terahertz dynamic regulation device of the present invention, the substrate can be stone English, silicon, sapphire or GaAs.
In an exemplary embodiment of the efficient Terahertz dynamic regulation device of the present invention, the shooting condition can be with For one or more of temperature, electric field, laser or pressure excitation etc..
A kind of efficient Terahertz dynamic regulation based on phase-change material impedance matching is provided in another aspect of this invention Method, the Terahertz dynamic regulation method are carried out using Terahertz dynamic regulation device as described above.
The present invention efficient Terahertz dynamic regulation method an exemplary embodiment in, the method may include with Lower step：It determines corresponding to impedance matching condition and the impedance matching condition of substrate/phase-change material layers/Air Interface Shooting condition；Phase-change material layers are enable to be respectively impedance matching condition and from resistance from insulation phase transition using shooting condition Anti- matching status is changed into metal phase, to realize to the back wave of the THz wave of the first surface incidence from substrate into row amplitude Regulation and control or modulation.
Compared with prior art, excellent effect of the invention includes at least one in the following contents：
(1) impedance matching phenomenon occurs by phase-change material layers and substrate, and matching phenomenon can make by phase-change material The THz wave reflected amplitude at interface is almost nil, to realize to reflected terahertz hereby wave significantly dynamic changes of strength regulate and control；
(2) switching mutually and between impedance matching condition and impedance matching condition and metal phase in insulation can be realized, It is quick, efficient to regulate and control speed；
(3) excellent earth electric field depth of amplitude modulation can be realized, for example, electric field amplitude modulation depth may be up to 90% (very More than 92%).
Description of the drawings
The description carried out by following accompanying drawings, above and other purpose of the invention and feature will become apparent, Wherein：
Fig. 1 shows the one of the efficient Terahertz dynamic regulation device according to the present invention based on phase-change material impedance matching The structural schematic diagram of a exemplary embodiment；
Fig. 2 (a)-(d) respectively illustrates the VO that thickness is 40nm, 110nm, 190nm and 280nm2The cross section of film SEM schemes；Fig. 2 (e) shows the VO of different-thickness2The Hysteresis cycle of the film resistor of film；
Fig. 3 (a) shows the reflection detection light path schematic diagram of one exemplary embodiment of the present invention；Fig. 3 (b)-(e) It respectively illustrates under heating state, on a quartz substrate from insulation state to the VO of the different-thickness of metallic state2Film reflector THz The evolution condition of pulse；
Fig. 4 (a)-(d) is respectively illustrated in phase transition process, four of thickness 40nm, 110nm, 190 nm and 280nm VO2The Er of film2Frequency domain spectra；
Fig. 5 shows the VO of 280nm thickness2The THz relative reflections of film (insulation phase, impedance matching condition, metal phase) With the relationship of frequency.
Specific implementation mode
Hereinafter, the height based on phase-change material impedance matching that the present invention will be described in detail will be carried out in conjunction with exemplary embodiment Imitate Terahertz dynamic regulation device and method.
Fig. 1 shows the one of the efficient Terahertz dynamic regulation device according to the present invention based on phase-change material impedance matching The structural schematic diagram of a exemplary embodiment.
As shown in Figure 1, in an exemplary embodiment of the present invention, the efficient terahertz based on phase-change material impedance matching Hereby dynamic regulation device includes substrate 1, phase-change material layers 2 and phase transformation excitation unit 3.
Substrate 1 has first surface 1a and second surface 1b away from one another.The thickness of substrate can be 0.1~3mm. One kind that substrate can be selected in quartz, silicon, sapphire and GaAs etc. is made, however, the invention is not limited thereto, Qi Taneng It is enough to realize that the material that impedance matching is constituted with phase-change material layers and Air Interface also.The first surface 1a of substrate can be towards too Hertz wave incident direction (directions THz in such as Fig. 1) is arranged.THz wave can be incident from the first surface of substrate, for example, Incidence angle can be 15~60 °.
Phase-change material layers are bonded on the second surface of substrate.For example, phase-change material layers can pass through such as inorganic sol- The methods of gel method homoepitaxial is on the second surface of substrate.Phase-change material layers, which have, to be metal phase from insulation phase transition Characteristic.Moreover it is preferred that at least two order of magnitude can occur under shooting condition for the conductivity of phase-change material layers (for example, 3 ~5 orders of magnitude) consecutive variations.The thickness of phase-change material layers is preferably controlled to 5nm~2 μm.Preferably, phase-change material layers can Think vanadium dioxide film.However, the invention is not limited thereto, vanadium trioxide film or titanium pentoxide film can also be used as phase Change material layer.
Phase transformation excitation unit be configured to phase-change material layers generate shooting condition so that phase-change material layers respectively from Insulation phase transition is impedance matching condition and to be changed into metal phase from impedance matching condition, to realize to from substrate first The back wave of the THz wave of surface incidence carry out efficiently, efficiently dynamic regulation, and carry out the electric field amplitude for having excellent The amplitude modulation of modulation depth.Impedance matching condition is happened at substrate/phase-change material layers/Air Interface.Herein, electric field shakes Width modulation depth is defined as (1-Eoff/Eon) * 100%.For example, shooting condition caused by phase transformation excitation unit can be temperature One or more of degree, electric field, laser or pressure excitation etc..
Fig. 2 (a)-(d) shows that thickness is respectively the VO of 40nm, 110nm, 190nm and 280nm2The cross section of film SEM schemes；Fig. 2 (e) shows the VO of different-thickness2The Hysteresis cycle of the film resistor of film.
In one exemplary embodiment, using inorganic sol-gel method in (10 × 10 squares of vitreous silica substrate Millimeter) on be prepared for VO with different thickness2Film.Referring to Fig. 2, it can be seen that for the VO of different-thickness2Film, exhausted The significantly different resistance variations order of magnitude is shown during edge body-metal phase change.Fig. 2 (a)-(d) shows VO2Section Scanning electron microscope (SEM) image, thickness is about 40nm, 110nm, 190nm and 280nm.Fig. 2 (e) shows VO2Square sheet electricity The Hysteresis cycle of resistance.Due to the insulator-metal phase transition in the heating period, the film resistor of every film greatly reduces.Pass through Increase the thickness of film, transition amplitude is continuously improved.The result shows that thickness of thin layer is the VO of 40nm2The resistance switch amount of film Only 2 orders of magnitude, and the film that thickness is 280nm then has 4 or more the orders of magnitude.Inventor indicates that this trend can return Become and results in more defects due to the thermal deformation bigger compared with thick film.These defects will determine metal phase, semiconductor phase and hole Gap coexists, and influences nucleation and growth of the metal group in phase transition process.Thicker film will be such that resistance and photoconductivity generates Change to continuous and larger number grade.Therefore, inventor further studies the VO with different resistance switch characteristics2Come Realize THz regulation and control and modulation based on impedance matching.
Fig. 3 (a) shows the reflection detection light path schematic diagram of one exemplary embodiment of the present invention；Fig. 3 (b)-(e) It respectively illustrates under heating state, on a quartz substrate from insulation state to the VO of metallic state2Reflect the evolution feelings of THz pulse Condition.In Fig. 3 (b)-(e), VO2The thickness of film is respectively (b) 40nm, (c) 110nm, (d) 190nm and (e) 280nm.
Impedance matching phenomenon is generated by the reflecting interface of optically denser medium to optically thinner medium.When the conductivity of reflecting interface When meeting matching condition, reflectance factor is close to zero.It is related with optically denser medium to match conductivity.For quartz substrate, when Incidence angle is 35 °, and impedance matching condition is about 2.2mS.As phase-change material, VO2The conductance of order of magnitude variation can be provided Rate reaches impedance matching.
It is measured in insulator-metal phase transition using the THz-TDS systems (terahertz time-domain spectroscopy system) of reflective-mode VO in the process2Reflection performance of control.Fig. 3 (a) illustrates reflection detection geometric representation, and the terahertz pulse of p-polarization enters Firing angle is 35 °.Select VO2As reflecting interface layer, impedance matching is happened at quartz/VO2/ Air Interface.First pulse Er1 It is reflected from air/quartz interface, the second pulse Er2 is from quartz/VO2/ Air Interface reflects.In order to eliminate the wave of THz signals Dynamic, the present exemplary embodiment uses Er1As calibrating Er with reference to pulse2Amplitude.
The present exemplary embodiment passes through VO of the design with different resistance switch characteristics2Film meets matching strip Part, it is observed that impedance matching.Fig. 3 (b)-(e) shows the VO measured in phase transition process2Reflection THz time-domain signals. The pulse Er of all films1It is of similar shape and amplitude.This is because Er1It is reflected from air/quartz interface, Therefore only directly related with incidence angle.Er2Time-domain signal because of VO2Phase transformation and constantly change.For the VO of 40nm thickness2, In phase transition process, Er2Amplitude all monotone decreasing in each case.However, for other three kinds of VO2Film, Er2Initially exist Reach minimum amplitude at impedance matching temperature (Tc), then increases with the reversion of impulse phase (paddy-peak to peak-paddy).This Outside, with VO2The increase of film thickness, Tc are reduced.
It should be noted that although the above exemplary embodiments be by temperature condition come realize phase-change material (for example, VO2) phase transition process, however, other electric fields, laser or pressure excitation etc. can also realize the phase transformation of phase-change material Journey.In addition, although not observing the VO containing 40nm thickness in Fig. 3 (b)2Dynamic regulation device impedance matching temperature, But inventor indicates the adjustment with conditions such as temperature, substrate situations, its impedance matching condition can be observed.In addition, on although State VO of the exemplary embodiment to different-thickness2The associated impedances matching status of film is measured and has been analyzed, however, it is necessary to Illustrate, by adjusting phase-change material (for example, VO2) doped chemical and its content, consistency, purity and substrate The conditions such as material and thickness also can adjust the impedance matching condition of the dynamic regulation device of exemplary embodiment of the present, usual phase The continuous change of 2 orders of magnitude or more (being further 3~5 orders of magnitude) occurs under shooting condition for the conductivity of change material layer Change makes it easy to obtain matching status.
Fig. 4 (a)-(d) is respectively illustrated in phase transition process (for example, from 25 DEG C to 95 DEG C), thickness 40nm, 110nm, Four VO of 190nm and 280nm2The Er of film2Frequency domain spectra.Wherein, the solid line for carrying filled symbols indicates pulse polarity reversion Preceding frequency spectrum；And the dotted line with open symbols represents the frequency spectrum after pulse polarity reversion；Curve with hollow five asterisk notation Represent impedance matching temperature TcFrequency spectrum.
Using the Fast Fourier Transform (FFT) (FFT) with Hahn (Hann) time window function, Er can be obtained2Frequency domain Amplitude, as shown in Fig. 4 (a)-(d).Solid line with filled symbols represents TcEr before2Spectrum, and the void with open symbols Line represents TcEr afterwards2Spectrum.Er2Frequency domain amplitude it is consistent with time domain THz pulse, in 40nm thickness VO2Film it is thermotropic absolutely Monotone decreasing during edge body-metal phase change, as shown in Fig. 4 (a).In addition, in the VO of three other thickness2In film, amplitude Minimum value is arrived first at, is then increased, as shown in Fig. 4 (b)-(d).By TcWhen Terahertz frequency spectrum size at 25 DEG C The size of Terahertz frequency spectrum when comparing, in the VO of 110nm, 190nm and 280nm thickness2In film, it observed on a large scale THz wave is suppressed.Range from Tc to 95 DEG C, this variation show opposite process.Especially, 280nm thickness is thin The frequency domain spectra of film in 65 DEG C in the range from 0.3Thz to 0.9THz close to zero.These results indicate that big THz electric field amplitudes Modulation depth is feasible in a reflective mode enabling.
For all four kinds of VO2Film type calculates temperature-dependent Terahertz relative reflection from its THz frequency spectrum Value.Here, by Terahertz relative reflection be positioned in the Terahertz electric field amplitude of each temperature with 25 DEG C respective amplitudes it Than.In order to determine these data, such as transmission matrix can be used to carry out the reflection and transmission coefficients of analog functuion film.
In the reflecting attribute of computing function film, VO need to be determined2Dielectric constant.Herein, Dodd (Drude) has been used Model is to determine VO2The dielectric constant of film, εVO2=ε∝-σDC/iε0ω(1-iωτ).Here, in high frequency limit, ε∞=9 are Dielectric constant, σDCIt is respectively VO with τ2Direct current (DC) conductivity and Diffusion time constant.Maximum DC conductivity can be with F is described using Bu Laigeman effective media theoriesm(σm-σDC)/(σm+2σDC)+fi(σi-σDC)/(σi+2σDC)=0, wherein σmAnd σiThe respectively conductivity of metal phase and insulation, and fmAnd fi(fm+fi=1) volume of metal phase and the phase that insulate is respectively represented Score.Part metals component is fm=1-1/ { 1+exp ((T-T0)/Δ T) }, wherein T0It is respectively phase transition temperature and gold with Δ T The temperature width of category-insulator transformation.Based on transfer matrix, all VO have been obtained2Analog result of the film in 0.5THz.
Fig. 5 shows the VO of 280nm thickness2The THz relative reflections of film (insulation phase, impedance matching condition, metal phase) With the relationship of frequency.
Fig. 5 shows from 0.3THz to 0.9THz in range, the VO of 280nm thickness2Film (insulation phase, impedance matching shape State, metal phase) THz relative reflections and frequency relationship.For the film of 280nm thickness, in insulation phase and impedance matching Between state, frequency averaging electric field amplitude modulation depth ((1-EImpedance matching condition/EInsulation) * 100%) it is 92.26%, even it is up to 94.5%；Between impedance matching condition and metal phase, frequency averaging electric field amplitude modulation depth ((1-EImpedance matching condition/EMetal)* 100%) it is 96.81%, even up to 97.6%.Compared with THz is transmitted, the electric field amplitude modulation depth of reflection is obviously more It is deep.
Based on the analysis to transmission matrix, these results can be attributed to film in phase transition process VO2In difference lead Electrically.In phase transition process, the VO of 40nm thickness2Conductivity do not reach impedance matching condition.For 110nm, 190nm and The film of 280nm thickness, during insulator-metal phase transition, conductivity value meets impedance matching condition, and temperature TcWith thin The increase of film thickness and reduce.In addition, most of VO2Modulator switches between insulation and metallic state, and this example The dynamic regulation device of property embodiment is in TcIt is switched between state of insulation or metallic state.Therefore, this exemplary implementation Example can shorten the regulation and control time, and further improve regulation and control speed.In addition, the THz pulse of s polarizations is also applied for VO2Film Impedance matching；The modulation depth of the THz pulse of s polarizations is lower, and its impedance matching temperature is higher than the THz pulse of p-polarization Impedance matching temperature.
In conclusion the above exemplary embodiments are based on VO2Impedance of film during thermotropic insulator-metal phase transition Matching, gives close to perfect THz electric field amplitudes modulation depth.By in insulator-metal phase change to its conductivity It actively tunes, is able to observe that VO2Impedance matching.In addition, the results showed that the THz modulation depths of impedance matching induction are to thin The resistance switch characteristic of film is sensitive.By the VO for designing different-thickness2Film can obtain 4 in the film of 280nm thickness The resistance variations of the order of magnitude.In addition, obtaining in 0.5THz, VO2Insulation mutually and impedance matching condition between electric field amplitude Modulation depth is 94.5% (intensity modulation depth 99.7%, (1-E2 Impedance matching condition/E2 Insulation) * 100%))；Impedance matching condition with Metal VO2Electric field amplitude modulation depth between phase is 97.6% (intensity modulation depth 99.94%).Above-mentioned example is implemented The result of example is consistent with using the simulation result of famous transfer matrix method.The present exemplary embodiment enables to answer in THz It uses in field to regulate and control and modulate as efficient amplitude using these films.
For summary, one exemplary embodiment of the present invention proposes one kind based on phase-change material (for example, vanadium dioxide Film) impedance matching realizes THz wave significantly reflected amplitude dynamic regulation device.The dynamic regulation device is by substrate (example Such as, quartz, sapphire, silicon etc.), phase-change material layers (for example, vanadium dioxide film) and phase transformation excitation unit composition.The dynamic is adjusted Control device using phase-change material semiconductor-metal phase change during its conductivity at least two order of magnitude consecutive variations spy Property, to which impedance matching phenomenon occur with base material, and THz wave by phase-change material interface can be made by matching phenomenon Reflected amplitude is almost nil, to realize to reflected terahertz hereby wave significantly dynamic changes of strength regulate and control.Another of the present invention shows Example property embodiment is proposed realizes that THz wave is significantly anti-based on phase-change material (for example, vanadium dioxide film) impedance matching It penetrates amplitude dynamic regulation method and one or more approach in additional temperature, electric field, laser or pressure excitation may be used to swash Phase-change material layers phase transformation is sent out, makes it that impedance matching phenomenon occur with substrate, to realize that efficient THz wave reflection dynamic is adjusted Control.The present invention prepares Terahertz by using phase-change material (for example, vanadium dioxide film) for the Dynamically functional materials of core Wave dynamic regulation or modulation device can solve the problems, such as that current THz devices modulation efficiency is low, modulating speed is slow.
Although having been combined exemplary embodiment above and attached drawing describing the present invention, those of ordinary skill in the art It will be apparent to the skilled artisan that in the case where not departing from spirit and scope by the claims, above-described embodiment can be carry out various modifications.

Claims (10)

1. a kind of efficient Terahertz dynamic regulation device based on phase-change material impedance matching, which is characterized in that the Terahertz Dynamic regulation device includes substrate, phase-change material layers and phase transformation excitation unit, wherein
The substrate has first surface and second surface away from one another, and the direction of first surface towards THz wave incidence is set It sets；
The phase-change material layers can be metal phase from insulation phase transition, and be incorporated on the second surface of substrate；
Phase transformation excitation unit generate shooting condition so that phase-change material layers respectively from insulation phase transition be impedance matching condition, And it is changed into metal phase from impedance matching condition, the impedance matching condition is happened at substrate/phase-change material layers/air circle Face.
2. the efficient Terahertz dynamic regulation device according to claim 1 based on phase-change material impedance matching, feature It is, the consecutive variations of at least two order of magnitude can occur under shooting condition for the conductivity of the phase-change material layers.
3. the efficient Terahertz dynamic regulation device according to claim 2 based on phase-change material impedance matching, feature It is, the consecutive variations of 3~4 orders of magnitude can occur under shooting condition for the conductivity of the phase-change material layers.
4. the efficient Terahertz dynamic regulation device according to claim 1 based on phase-change material impedance matching, feature It is, the thickness controls of the phase-change material layers is in the range of 5nm~2 μm, and the thickness control of substrate is in the model of 0.1~3mm It encloses.
5. the efficient Terahertz dynamic regulation device according to claim 1 based on phase-change material impedance matching, feature It is, the phase-change material layers are vanadium dioxide film, vanadium trioxide film or titanium pentoxide film.
6. the efficient Terahertz dynamic regulation device according to claim 5 based on phase-change material impedance matching, feature It is, the phase-change material layers are thickness in the vanadium dioxide film of 230~300nm ranges, vanadium trioxide film or five oxygen Change three titanium films.
7. the efficient Terahertz dynamic regulation device according to claim 1 based on phase-change material impedance matching, feature It is, the substrate is quartz, silicon, sapphire or GaAs.
8. the efficient Terahertz dynamic regulation device according to claim 1 based on phase-change material impedance matching, feature It is, the shooting condition is one or more of temperature, electric field, laser or pressure excitation etc..
9. a kind of efficient Terahertz dynamic regulation method based on phase-change material impedance matching, which is characterized in that the Terahertz Dynamic regulation method is carried out using Terahertz dynamic regulation device as claimed in any of claims 1 to 8 in one of claims.
10. the efficient Terahertz dynamic regulation method according to claim 9 based on phase-change material impedance matching, feature It is, the described method comprises the following steps：
Determine the impedance matching condition of substrate/phase-change material layers/Air Interface and swashing corresponding to the impedance matching condition Clockwork spring part；
Phase-change material layers are enable to be respectively impedance matching condition and from impedance matching from insulation phase transition using shooting condition State is changed into metal phase, to realize to the back wave of the THz wave of first surface incidence from substrate into row amplitude regulation and control or Modulation.
CN201810148678.2A 2018-02-13 2018-02-13 Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching Active CN108345130B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810148678.2A CN108345130B (en) 2018-02-13 2018-02-13 Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810148678.2A CN108345130B (en) 2018-02-13 2018-02-13 Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching

Publications (2)

Publication Number Publication Date
CN108345130A true CN108345130A (en) 2018-07-31
CN108345130B CN108345130B (en) 2019-10-01

Family

ID=62959876

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810148678.2A Active CN108345130B (en) 2018-02-13 2018-02-13 Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching

Country Status (1)

Country Link
CN (1) CN108345130B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109031707A (en) * 2018-08-22 2018-12-18 电子科技大学 A kind of the vanadium dioxide Terahertz modulator and its regulation method of vertical structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101943803A (en) * 2010-07-07 2011-01-12 电子科技大学 Structural material for modulation of terahertz waves
CN102081274A (en) * 2010-12-22 2011-06-01 四川大学 Vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation device and method
CN102303429A (en) * 2011-06-21 2012-01-04 电子科技大学 Tunable flat absorbing material for electromagnetic waves
CN104678598A (en) * 2015-03-31 2015-06-03 中国石油大学(华东) Terahertz modulator, and preparation method and tuning method of terahertz modulator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101943803A (en) * 2010-07-07 2011-01-12 电子科技大学 Structural material for modulation of terahertz waves
CN102081274A (en) * 2010-12-22 2011-06-01 四川大学 Vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation device and method
CN102303429A (en) * 2011-06-21 2012-01-04 电子科技大学 Tunable flat absorbing material for electromagnetic waves
CN104678598A (en) * 2015-03-31 2015-06-03 中国石油大学(华东) Terahertz modulator, and preparation method and tuning method of terahertz modulator

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
刘志强等: "基于VO2薄膜相变原理的温控太赫兹超材料调制器", 《物理学报》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109031707A (en) * 2018-08-22 2018-12-18 电子科技大学 A kind of the vanadium dioxide Terahertz modulator and its regulation method of vertical structure
CN109031707B (en) * 2018-08-22 2023-01-17 电子科技大学 Vanadium dioxide terahertz modulator with vertical structure and regulation and control method thereof

Also Published As

Publication number Publication date
CN108345130B (en) 2019-10-01

Similar Documents

Publication Publication Date Title
Lim et al. Ultrafast all‐optical switching of germanium‐based flexible metaphotonic devices
Zhu et al. Effect of substrate orientation on terahertz optical transmission through VO 2 thin films and application to functional antireflection coatings
Streyer et al. Strong absorption and selective emission from engineered metals with dielectric coatings
Hoque et al. High performance spatial light modulators for terahertz applications
JP7203431B2 (en) Field effect tunable epsilon near zero absorber
US20140001379A1 (en) Terahertz wave modulator based on hole-injection and -transfer
Li et al. Photonic crystal waveguide electro-optic modulator with a wide bandwidth
Sanphuang et al. THz transparent metamaterials for enhanced spectroscopic and imaging measurements
US20190391301A1 (en) Light absorbing body, bolometer, infrared ray absorbing body, solar thermal power generating device, radiant cooling film, and method for manufacturing light absorbing body
Wang et al. Surface plasmon polaritons in VO 2 thin films for tunable low-loss plasmonic applications
Shin et al. Metal-VO2 hybrid grating structure for a terahertz active switchable linear polarizer
Das et al. A transformative metasurface based on zerogap embedded template
Liu et al. Dynamic infrared thin-film absorbers with tunable absorption level based on VO 2 phase transition
Kumar et al. Photoinduced surface plasmon switching at VO 2/Au interface
Jianjun et al. Development of a tunable terahertz absorber based on temperature control
CN110221367A (en) A kind of Terahertz modulator and its regulation method based on vanadium dioxide film
Cuniot-Ponsard et al. Simultaneous characterization of the electro-optic, converse-piezoelectric, and electroabsorptive effects in epitaxial (Sr, Ba) Nb2O6 thin films
CN108345130B (en) Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching
Ji et al. Active multifunctional terahertz modulator based on plasmonic metasurface
Fruhling et al. Understanding all-optical switching at the epsilon-near-zero point: a tutorial review
Figueroa et al. A Simplified Approach for Obtaining Optical Properties of VO2 Thin Films, and Demonstration of Infrared Shape‐Shifting Devices
Palto et al. Plasmon electro-optic effect in a subwavelength metallic nanograting with a nematic liquid crystal
Isaac et al. Surface-mode lifetime and the terahertz transmission of subwavelength hole arrays
Sygletou et al. In-operando optical spectroscopy of field-effect-gated Al-doped ZnO
Blinov et al. Giant quadratic electro-optical effect during polarization switching in ultrathin ferroelectric polymer films

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant