CN109031707B - Vanadium dioxide terahertz modulator with vertical structure and regulation and control method thereof - Google Patents
Vanadium dioxide terahertz modulator with vertical structure and regulation and control method thereof Download PDFInfo
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- CN109031707B CN109031707B CN201810962611.2A CN201810962611A CN109031707B CN 109031707 B CN109031707 B CN 109031707B CN 201810962611 A CN201810962611 A CN 201810962611A CN 109031707 B CN109031707 B CN 109031707B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
Abstract
The invention discloses a vanadium dioxide terahertz modulator with a vertical structure, relates to the design of a terahertz modulator vertical structure based on a vanadium dioxide film, and aims to provide a preparation method of an electronically-controlled triggered vanadium dioxide modulator, which solves the problems that the traditional vanadium dioxide modulator is low in switching speed, needs an additional device and the like. The terahertz modulator with the vertical structure is composed of a dielectric substrate, a bottom transparent conductive film, a vanadium dioxide film and a top electrode. The dielectric substrate and the bottom layer conductive film are highly transparent to terahertz waves, and the conductive film is used as a substrate to facilitate preparation of the upper layer vanadium dioxide film. The device applies driving voltage to the bottom layer conductive film and the top layer electrode in the vertical structure to trigger the vanadium dioxide film in the middle layer to change phase so as to realize modulation of terahertz waves. The invention has the advantages of low insertion loss, high speed, low power consumption, high integration level, simple structure and the like, and is beneficial to the application of the vanadium dioxide film on a high-speed terahertz modulation device.
Description
Technical Field
The invention belongs to the technical field of terahertz application, and particularly relates to a vanadium dioxide modulator with a vertical structure and a regulation and control method thereof.
Background
Terahertz is an electromagnetic wave with a frequency range of 0.1-10 THz (with a wavelength of 3000-30 μm) in a special frequency band, and is just in the range of an electric field spectrum between microwave and infrared. It has many excellent characteristics such as large capacity, high safety, high transmission rate, high anti-interference performance and strong penetrability, has wide application prospect in the fields of biomedicine, high-speed communication, astronomy, military, security, detection imaging and the like and related interdisciplinary fields. Due to the increasing pressure on the demand of the modern society for wireless communication, the terahertz communication system has recently become a research hotspot. The most critical device to realize terahertz high-speed and broadband communication is a terahertz modulation device.
Vanadium dioxide (VO) 2 ) The material is a material with insulator-metal state phase change characteristics, can be converted from a monoclinic insulator state (high resistance state) to a tetragonal metal state (low resistance state) under external stimulation (temperature, illumination, electric field and stress), has the resistivity changed by 2-4 orders of magnitude in the first-order displacement phase change of a crystal, and has the parameters of dielectric constant, magnetic permeability and the like, and the characteristics of microwaves, optics and even terahertz waves can be obviously reversibly changed along with the phase change process. Specifically, in the insulating state, terahertz wave energy well transmits VO 2 Film, in metallic state, terahertz wave is VO 2 The film is reflective. More importantly, VO 2 The phase change speed is very fast, and the femtosecond laser is used for pumping the VO 2 The response time is less than 1ps with thin films. Thus, VO 2 The terahertz material is a very promising terahertz functional material, and is particularly used in the aspect of high-speed modulation devices.
Historically, based on VO 2 The research on modulating devices of (a) has mainly focused on thermally-activated metal-insulator phase transitions. However, practical studies have found that thermally triggered VO 2 The film phase transition because need go on the change that rises and falls the temperature, the speed of control phase transition is relatively slow, takes place temperature cooling after the phase transition moreover and also needs a very long process, is unfavorable for operation repeatedly, needs extra heating device simultaneously, operates complicacy. These greatly limit VO-based 2 Development of terahertz modulators. On the other hand, VO is triggered by adopting electric control 2 The research on the phase change to realize adjustable electronic devices is receiving more and more attention. By supplying VO 2 The thin film applies a voltage to induce an electrically driven metal-insulator transition (E-MIT), and the following electron-dependent effect can bring ultra-fast switching rate, but VO is triggered based on electric control 2 Phase-change modulation device structures have been extremely lacking to date. And existing miningVO driven by electricity 2 The structure of (2) is mostly a transverse voltage type planar device structure (the current direction is parallel to the surface of the film). Devices of this type of structure all suffer from a phase transition threshold voltage that is too high (up to several hundred volts), which leads to high power consumption problems for the device.
Disclosure of Invention
The invention aims to provide a vanadium dioxide terahertz modulator with a vertical structure, which can be used for modulating terahertz waves at high speed and high efficiency in an electric control mode, so that the problems that the traditional vanadium dioxide modulator is low in switching speed, needs an additional device and is driven by an electric power VO (volatile organic compound) 2 The threshold voltage of the structural phase change is too high.
In order to achieve the purpose, the invention adopts the following technical scheme: a vanadium dioxide terahertz modulator with a vertical structure comprises a medium substrate, wherein the medium substrate is made of a material transparent to terahertz waves. Growing or transferring a bottom layer conductive film on the dielectric substrate through a process, wherein the bottom layer conductive film is made of a material transparent to terahertz waves, growing a vanadium dioxide thin film layer on the bottom layer conductive film, and finally manufacturing a top layer metal electrode on the prepared vanadium dioxide thin film layer. The vanadium dioxide film is used as a functional material to modulate incident terahertz waves, and the bottom conductive film and the top electrode are used as an upper electrode and a lower electrode to load modulation voltage.
The bottom layer conductive film should have good conductivity and very high terahertz transmittance (not less than 85%). Preferably, one of a graphene film or a DMSO (dimethyl sulfoxide) -doped PEDOT: PSS film can be selected, and meanwhile, the conductive film serving as a substrate is beneficial to preparation of a vanadium dioxide film on the conductive film. It is further preferred that the underlying conductive film is grown directly or transferred to the dielectric substrate by a chemical vapor deposition or spin-on process.
The vanadium dioxide thin film is an undoped vanadium dioxide thin film or a doped vanadium dioxide thin film, and the doped elements of the doped vanadium dioxide thin film are one or more of W, mo, ti, nb, ta or Al. The vanadium dioxide film has excellent metal-insulator phase transition characteristics, and can remarkably change the transmission performance of terahertz waves. Further preferably, the vanadium dioxide thin film is obtained by magnetron sputtering or pulsed laser deposition. Further preferably, the thickness of the vanadium dioxide film is 20-500nm, and the conductivity of the vanadium dioxide film can change by 100-10000 times in the phase transition process from an insulator to a metal, wherein the conductivity is 1-100S/m in an insulating state and 10000-1000000S/m in a metal state.
The top electrode is made of gold, silver, platinum or one of aluminum, copper and titanium, the thickness is 100-500nm, the electrode size is selected according to the principle that the proportion of the electrode on the surface of the vanadium dioxide film is small, the terahertz wave can normally pass through the device before modulation is guaranteed, and the proportion of the electrode covering the surface of the vanadium dioxide film is 1% -20%. For example, a size of 200. Mu. M.times.200. Mu.m can be used.
A method for regulating a vanadium dioxide terahertz modulation device with a vertical structure comprises the following steps: the terahertz wave is modulated by applying driving voltage to the bottom transparent conductive film and the top electrode in the vertical structure and triggering the phase change of the vanadium dioxide film in the middle layer.
Preferably, by reacting with VO 2 Applying driving voltage to the conductive film layer of the upper layer and the lower layer of the film and the metal electrode to trigger VO of the middle layer 2 The film is subjected to metal-insulator phase change, and modulation of terahertz waves is finally achieved. VO (vacuum vapor volume) 2 The film is in a high-resistance insulation state before phase change, the number of current carriers is small, the barrier to terahertz waves is small, and the transmittance is high. VO when the driving voltage exceeds the trigger 2 VO after the phase change threshold voltage of the thin film 2 The film crystal structure is changed from a monoclinic rutile structure to a metal state, the electric conductivity is increased rapidly, the current carriers are increased, the reflectivity of the terahertz wave is enhanced, and the transmittance of the terahertz wave is obviously weakened. Note that this is because VO 2 The phase change process of the film is reversible, and VO is reduced to be less than threshold voltage after the driving voltage is reduced 2 The film can be converted into an insulating state again, and the terahertz wave modulator is in a high-transmittance state, so that the modulation characteristic of the modulator is reversible.
Due to VO 2 The switching time of the device can be longer than that of the thermally induced phase changeSeveral orders of magnitude faster. In general, the relaxation time of the thermotropic phase transition is 10 -6 s, and a relaxation time of about 2X 10 in electrically triggered phase transition without changing other conditions -9 And s. Therefore, compared with a thermal-triggered vanadium dioxide device, the electrical-triggered vanadium dioxide device has the advantages of high phase change speed and shorter response time. Meanwhile, the distance between two electrodes in the vertical device structure is in the micrometer scale range, so that the VO can be achieved by only needing a smaller threshold voltage 2 A phase change occurs which greatly shortens the switching time.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. in the invention, the operation is carried out through electric control without external excitation such as illumination, heating and the like, which has great advantages for miniaturization, practicability and mass production of devices.
2. In the invention, the vanadium dioxide has high modulation speed and VO is triggered electrically 2 The film realizes phase change between an insulating state and a metal state, and the switching time of the device is expected to reach nanosecond level.
3. In the present invention, the spacing between the two electrodes in the vertical structure is in the micron scale range, so that a smaller threshold voltage is sufficient for VO 2 A phase change occurs which greatly shortens the switching time.
4. In the present invention, VO is used 2 The film is used as a modulation functional layer because of VO 2 The phase change of the terahertz wave has an obvious modulation effect on a very wide terahertz frequency band, so that the broadband effect of the device is very obvious.
5. In the invention, the conductive film (graphene) transparent to terahertz waves is used as the bottom electrode, so that VO can be avoided 2 VO enhancement by stress between thin film and conventional metal thin film electrode 2 The quality of the film, the process operation process is simple and the requirement is low.
6. In the invention, the substrate and the conductive film are both made of materials which are highly transparent to the terahertz waves, so that the terahertz waves can normally pass through the device before modulation, and the insertion loss is low.
7. For VO, the invention 2 The film has great significance in application to high-speed terahertz modulation devices.
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
FIG. 1 is a schematic structural diagram of a vertical-structure vanadium dioxide terahertz modulator in an embodiment of the invention;
FIG. 2 is a top view of a vertical structure vanadium dioxide terahertz modulator in an embodiment of the invention;
FIG. 3 is a graph showing simulation results of a vanadium dioxide terahertz modulator with a vertical structure in an embodiment of the invention;
FIG. 4 is a characteristic curve of the change of the resistance of the vanadium dioxide thin film before and after the phase change in the embodiment of the invention;
FIG. 5 is a schematic diagram of the switching time of the vanadium dioxide thin film in the electrically triggered phase change according to the embodiment of the present invention;
fig. 6 is a schematic diagram of a distance between two electrodes in the vanadium dioxide terahertz modulator with a vertical structure in the embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The technical scheme of the invention is as follows:
a vanadium dioxide terahertz modulator with a vertical structure comprises a dielectric substrate 1, a bottom layer conductive film 2, a vanadium dioxide film 3 and a top layer electrode 4 which are sequentially distributed from bottom to top; the dielectric substrate 1 and the bottom layer conductive film 2 are made of materials transparent to terahertz waves.
Preferably, the dielectric substrate 1 is made of high-resistance silicon or sapphire.
Preferably, the bottom conductive film 2 is prepared from a graphene film or a DMSO-doped PEDOT: PSS film.
It is further preferred that the underlying conductive film 2 is grown directly or transferred to the dielectric substrate by a chemical vapor deposition or spin-on process.
Preferably, the vanadium dioxide film 3 is an undoped vanadium dioxide film or a doped vanadium dioxide film, and the doping elements of the doped vanadium dioxide film are one or more of W, mo, ti, nb, ta or Al.
Further preferably, the vanadium dioxide thin film 3 is prepared by magnetron sputtering or pulsed laser deposition.
Further preferably, the thickness of the vanadium dioxide thin film 3 is 20-500nm.
Preferably, the top electrode 4 is made of one of gold, silver, platinum, aluminum, copper or titanium metal and has a thickness of 100-500nm. The proportion of the size of the electrode on the surface of the lower vanadium dioxide film is small, so that terahertz waves can normally pass through the device before modulation.
The invention also provides a regulation and control method of the vanadium dioxide terahertz modulator with the vertical structure, which comprises the following steps: the terahertz wave is modulated by applying driving voltage to the bottom transparent conductive film and the top electrode in the vertical structure and triggering the phase change of the vanadium dioxide film in the middle layer.
Preferably, when the driving voltage exceeds the phase change threshold voltage, the vanadium dioxide film is converted into a metal state, and the device is in a low-transmittance state for terahertz waves; when the driving voltage is reduced to be smaller than the threshold voltage, the vanadium dioxide film can be converted into an insulating state again, the device is in a high-transmittance state to terahertz waves, and the conversion process is reversible.
The technical solution of the present invention is further described by specific embodiments with reference to fig. 1 to 6 below:
fig. 1 is a schematic structural diagram of a vanadium dioxide terahertz modulator with a vertical structure according to the present invention. Wherein 1 is a dielectric substrate, 2 is a bottom conductive thin film layer, 3 is a vanadium dioxide thin film, 4 is a top electrode, and 5 is a constant potential rectifier. Firstly, a bottom layer conductive film is grown or transferred on a dielectric substrate through a process, then a vanadium dioxide thin film layer is prepared on the bottom layer conductive film, and finally a top layer electrode is manufactured on the prepared vanadium dioxide thin film layer, so that the vanadium dioxide terahertz modulator with a vertical structure is manufactured. Is worthy of noteIt is intended that, as shown in FIG. 2, VO is used to ensure that the terahertz wave can normally pass through the device before modulation 2 The proportion of the metal electrode on the upper surface of the film on the thin vanadium dioxide surface is small.
More specifically, in the embodiment, the terahertz modulator is prepared by using a vertical structure of high-resistance silicon-transfer graphene film-vanadium dioxide film-gold electrode, and the specific process steps are as follows:
(1) and cleaning the high-resistance silicon substrate.
When the high-resistance silicon substrate is cleaned, the method comprises the following steps: putting the high-resistance silicon substrate into acetone for ultrasonic treatment for 10-30min to remove surface impurities, then putting the high-resistance silicon substrate into absolute ethyl alcohol for ultrasonic treatment for 10-30min to remove residual acetone, then putting the high-resistance silicon substrate into deionized water for ultrasonic cleaning for 10-30min to remove residual ethyl alcohol, finally putting the high-resistance silicon substrate into absolute ethyl alcohol for storage, and drying the high-resistance silicon substrate with nitrogen before use.
(2) And transferring the graphene film.
Firstly, the copper sheet with the proper size is cut from the copper sheet after the graphene film grows, and a PMMA organic glass reagent is uniformly coated on the inner side of the copper sheet, so that the graphene film and the copper substrate can be completely separated conveniently. Next, the copper substrate was immersed in 50 ml of a 0.10% ammonium persulfate solution. Compared with the same type of ferric chloride reagent, the ammonium persulfate solution can not introduce redundant impurities after reaction, and then deionized water is used for cleaning the ammonium persulfate remained on the surface of the film. And then, supporting a PMMA-containing graphene film by using the silicon substrate, and uniformly coating a PMMA reagent for the second time to prevent the film from being broken. And finally, putting the mixture into an acetone solution for soaking for a certain time, and taking out the mixture after the PMMA on the surface is completely removed. And finally, successfully transferring the graphene film on the high-resistance silicon substrate.
(3) And growing the vanadium dioxide film.
And preparing the vanadium dioxide film on the high-resistance silicon substrate transferred with the graphene film by using direct-current magnetron sputtering. Background vacuum degree less than 1.0 x 10 -3 Pa, the substrate temperature was 60 ℃ during deposition. Using a metal V target as a sputtering target material, introducing argon gas to carry out pre-sputtering for 25min in a vacuum environment, wherein the sputtering current is 0.34 +/-0.01A, so as to remove the part which is possibly oxidized and other stains on the target materialDyeing, and the like. And then introducing oxygen, and carrying out reactive sputtering deposition under the mixed atmosphere of the oxygen and the argon, wherein the argon flow is 98sccm, the oxygen flow is 2sccm, and the sputtering time is 30min. After the sputtering is finished, high-temperature annealing is carried out under the oxygen atmosphere, the oxygen flow is 15sccm, the annealing temperature is 425 ℃, and the annealing time is 30min. And after the annealing treatment is finished, naturally cooling to room temperature in a vacuum environment.
(4) And preparing a gold electrode.
At VO by electron beam evaporation 2 An Au electrode is deposited on the surface of the film to be used as an upper electrode, and the size of the Au electrode is 200 mu m multiplied by 200 mu m.
VO prepared by the embodiment of the invention 2 The film has excellent phase change performance, and the resistance mutation can exceed 2-3 orders of magnitude, as shown in figure 3. Further study of VO 2 The change of the terahertz transmittance before and after the phase change of the film has the following specific results: VO (vacuum vapor volume) 2 The film is in a high-resistance insulation state before phase change, and the transmittance is very high because fewer carriers have small obstruction to terahertz waves; when VO is generated 2 The film crystal structure is changed from a monoclinic rutile structure to a metal state, the conductivity is increased rapidly, carriers are increased, the reflectivity of the terahertz wave is increased, and the transmittance of the terahertz wave is obviously reduced. These results imply VO 2 The thin film is applicable to the terahertz wave technology with high-efficiency modulation.
The graphene in the embodiment of the invention is used as a substrate, and VO can be avoided 2 The stress between the film and the previous metal film electrode is improved to prepare VO 2 The quality of the film. The results in fig. 3 also demonstrate VO on graphene thin films 2 The film has excellent phase change performance. In addition, the transmittance of the graphene film in the terahertz waveband is higher than 90%, the terahertz wave is ensured to be in a high transmittance state in the device before modulation, and the insertion loss of the device is reduced.
Fig. 4 shows the simulation calculation results of the modulator in this embodiment. The results show that in the frequency range of 1.9-7THz, the VO of the invention is passed 2 Applying driving voltage to the conductive film layer and the metal electrode on the two sides of the film to trigger VO of the middle layer 2 Metal-insulator phase transition of thin filmThe modulation amplitude of the modulator can reach more than 70%. Because the size of the upper electrode is VO 2 The proportion of the surface of the film is small, so that the terahertz wave can normally pass through the device before modulation. At VO 2 In the insulator state, the incident terahertz wave passes through the other region of the thin film (region other than the electrode structure) in a high transmittance state. At the same time, VO in the excitation intermediate layer 2 In the phase change process of the film, the phase change region is not only the region area below the metal electrode, but the phase change can be quickly diffused to other regions of the film, so that the transmittance of the terahertz wave is greatly reduced. At the same time because of VO 2 The metal-insulator phase change of the film has obvious modulation effect on a very wide terahertz frequency band, so that the broadband effect of the device is very obvious.
The modulation rate of the modulator in the invention mainly depends on the electrical trigger switch time of the vanadium dioxide film of the functional layer. According to VO 2 According to the ultrafast electronic switching effect theory of the thin film electric-triggered phase change, the switching time of the electric-triggered phase change can be several orders of magnitude faster than that of the thermal-induced phase change, and the ultrafast electronic switching effect theory belongs to the ultrafast orders of magnitude. Research results show that the relaxation time can reach 2 multiplied by 10 when the phase change is electrically triggered -9 s (see fig. 5). Thus, based on VO 2 Thin film electrical triggering devices must have the "high speed" feature described.
VO driven electrically by electricity 2 The structure of (2) is mostly a transverse voltage type planar device structure (the current direction is parallel to the surface of the film). Devices of this type of structure all suffer from a phase change threshold voltage that is too high (up to several hundred volts). As can be seen from FIG. 6, in the device of the vertical structure (the direction of current flow is perpendicular to the surface of the thin film) of the present invention, the distance between the two electrodes is about 200nm (VO) 2 Thickness of thin film) so that a small threshold voltage (in the order of several volts) is sufficient to make VO 2 A phase change occurs which greatly increases the lifetime of the device and reduces the overall power consumption.
Therefore, the device based on the vertical structure has the advantages of low insertion loss, high speed, low power consumption, high integration level, simple structure and the like, and has wider application value on the high-speed terahertz modulation device.
Of course, the structures of the layers in the invention can also adopt other materials and structures with similar functions, for example, the substrate can adopt sapphire, the conductive film can be DMSO doped PEDOT: PSS film, the middle functional layer can adopt doped vanadium dioxide film, and the top electrode can adopt an interdigital structure. Therefore, the above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. The utility model provides a vanadium dioxide terahertz modulator of vertical structure which characterized in that: the device comprises a dielectric substrate (1), a bottom conductive film (2), a vanadium dioxide film (3), a top electrode (4) and a potentiostat (5) which are sequentially distributed from bottom to top; the dielectric substrate (1) and the bottom layer conductive film (2) are made of materials transparent to terahertz waves; the bottom layer conductive film (2) is prepared from a graphene film or DMSO (dimethyl sulfoxide) -doped PEDOT (PSS) film, and the bottom layer conductive film (2) directly grows or is transferred to a medium substrate through a chemical vapor deposition or spin coating process; the terahertz wave is modulated by applying driving voltage to the bottom transparent conductive film and the top electrode in the vertical structure and triggering the phase change of the vanadium dioxide film in the middle layer.
2. The vertical-structure vanadium dioxide terahertz modulator according to claim 1, characterized in that: the dielectric substrate (1) is made of high-resistance silicon or sapphire.
3. The vertical structure vanadium dioxide terahertz modulator according to claim 1, characterized in that: the vanadium dioxide film (3) is an undoped vanadium dioxide film or a doped vanadium dioxide film, and the doped elements of the doped vanadium dioxide film are one or more of W, mo, ti, nb, ta or Al.
4. The vertical structure vanadium dioxide terahertz modulator according to claim 3, characterized in that: the vanadium dioxide film (3) is prepared by magnetron sputtering or pulsed laser deposition.
5. The vertical-structure vanadium dioxide terahertz modulator according to claim 3, characterized in that: the thickness of the vanadium dioxide film (3) is 20-500nm.
6. The vertical structure vanadium dioxide terahertz modulator according to claim 1, characterized in that: the top electrode (4) is made of one of gold, silver, platinum, aluminum, copper or titanium, the thickness is 100-500nm, and the proportion of the electrode covering the surface of the vanadium dioxide film is 1% -20%.
7. The method for regulating the vanadium dioxide terahertz modulator with the vertical structure according to claim 1, characterized in that: when the driving voltage exceeds the trigger phase change threshold voltage, the vanadium dioxide film is converted into a metal state, and the device is in a low-transmittance state for terahertz waves; when the driving voltage is reduced to be smaller than the threshold voltage, the vanadium dioxide film can be converted into an insulating state again, and the device is in a high-transmittance state for terahertz waves; the transformation process is reversible.
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| CN110221367A (en) * | 2019-07-02 | 2019-09-10 | 电子科技大学 | A kind of Terahertz modulator and its regulation method based on vanadium dioxide film |
| CN110620329B (en) * | 2019-10-18 | 2020-07-28 | 华东师范大学重庆研究院 | Terahertz saturable absorption device for quantum cascade laser |
| CN112011775A (en) * | 2020-08-28 | 2020-12-01 | 电子科技大学 | Preparation method of vanadium oxide film with extremely narrow thermal hysteresis loop applied to THz modulation |
| CN112285952B (en) * | 2020-09-17 | 2023-11-24 | 首都师范大学 | Programmable terahertz memory modulation device and system based on vanadium dioxide |
| CN114665859B (en) * | 2022-03-25 | 2023-06-06 | 电子科技大学 | Infrared switch based on thermoelectric cooperative regulation and control of vanadium dioxide film |
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| CN104749800A (en) * | 2013-12-27 | 2015-07-01 | 华为技术有限公司 | Modulator and optical module |
| CN108345130A (en) * | 2018-02-13 | 2018-07-31 | 四川大学 | Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching |
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