CN108345130B - Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching - Google Patents

Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching Download PDF

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CN108345130B
CN108345130B CN201810148678.2A CN201810148678A CN108345130B CN 108345130 B CN108345130 B CN 108345130B CN 201810148678 A CN201810148678 A CN 201810148678A CN 108345130 B CN108345130 B CN 108345130B
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change material
impedance matching
substrate
dynamic regulation
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CN108345130A (en
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施奇武
黄婉霞
朱洪富
朱礼国
李江
杜良辉
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Sichuan University
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0102—Constructional details, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009—Materials therefor

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  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The present invention provides a kind of efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching.Described device includes substrate, phase-change material layers and phase transformation excitation unit, wherein the substrate has first surface and second surface away from one another, and first surface is arranged towards the direction of THz wave incidence；The phase-change material layers can be metal phase from insulation phase transition, and be incorporated on the second surface of substrate；The phase transformation excitation unit generates shooting condition so that phase-change material layers are impedance matching condition from insulation phase transition respectively and are changed into metal phase from impedance matching condition, and the impedance matching condition occurs in substrate/phase-change material layers/Air Interface.The method enables phase-change material layers mutually or between metal phase to switch in impedance matching condition with insulation using shooting condition, so as to realize that the back wave to THz wave efficiently, efficiently regulate and control, and has excellent electric field amplitude modulation depth.

Description

Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching
Technical field
The present invention relates to THz wave amplitude control technique fields, and more specifically, being related to one kind can have efficiently too The Terahertz dynamic regulation device and method of hertz amplitude dynamic regulation effect, even excellent electric field amplitude modulation depth.
Background technique
Terahertz (THz) wave is covered from the infrared wide bandwidth range between microwave frequency band, and passes through Terahertz frequency Spectrum is proved to have many advantages, especially has weight to the intelligent THz devices such as switch, modulator and memory storage device It acts on.For these equipment, the dynamic manipulation to THz wave is a main problem.Many people attempt using have can The functional material of electrical parameter, including two-dimensional material, phase change oxide, photonic crystal and semiconductor are dimmed to solve this theme.
Specifically, the insulator-metal phase transition feature of typical phase-change material such as vanadium dioxide makes it for active Sizable interest is attracted in terms of the development of photoelectric device.The phase transition process along with oxide electrical properties change dramatically And mutation.Previous research work is mainly to consider the optimization of crystal structure, pattern to the stoichiometry of vanadium dioxide film, To realize the high efficiency regulatory of Terahertz transmission amplitude in phase transition process.However, still being deposited by the optimization to material fabrication process In the problem that modulating speed is slow, modulation efficiency is low, and it is difficult to improve modulation depth.
Summary of the invention
It is an object of the invention to solve at least one in deficiencies of the prior art.
For example, it is an object of the present invention to solving, Terahertz back wave modulation device modulation efficiency is low, modulating speed At least one of in the problems such as slowly, modulation depth is small.
To achieve the goals above, an aspect of of the present present invention provide it is a kind of based on phase-change material impedance matching efficiently too Hertz dynamic regulation device, the Terahertz dynamic regulation device include that substrate, phase-change material layers and phase transformation excite unit, In, the substrate has first surface and second surface away from one another, and the direction of first surface towards THz wave incidence is set It sets；The phase-change material layers can be metal phase from insulation phase transition, and be incorporated on the second surface of substrate；The phase transformation swashs Bill member generates shooting condition so that phase-change material layers are respectively impedance matching condition and from impedance matching from insulation phase transition State is changed into metal phase, and the impedance matching condition occurs in substrate/phase-change material layers/Air Interface.
In an exemplary embodiment of efficient Terahertz dynamic regulation device of the invention, the phase-change material layers The consecutive variations of at least two order of magnitude can occur under shooting condition for conductivity.Preferably, the conductivity energy of phase-change material layers Enough consecutive variations that 3~4 orders of magnitude occur under shooting condition.
In an exemplary embodiment of efficient Terahertz dynamic regulation device of the invention, the phase-change material layers Thickness can be controlled in the range of 5nm~2 μm, and the thickness of substrate can be controlled in the range of 0.1~3mm.
In an exemplary embodiment of efficient Terahertz dynamic regulation device of the invention, the phase-change material layers can Think vanadium dioxide film, vanadium trioxide film or titanium pentoxide film.For example, the phase-change material layers can be thickness Spend the vanadium dioxide film in 230~300nm range.
In an exemplary embodiment of efficient Terahertz dynamic regulation device of the invention, the substrate can be stone English, silicon, sapphire or GaAs.
In an exemplary embodiment of efficient Terahertz dynamic regulation device of the invention, the shooting condition can be with For one or more of temperature, electric field, laser or pressure excitation etc..
A kind of efficient Terahertz dynamic regulation based on phase-change material impedance matching is provided in another aspect of this invention Method, the Terahertz dynamic regulation method are carried out using Terahertz dynamic regulation device as described above.
In an exemplary embodiment of efficient Terahertz dynamic regulation method of the invention, the method may include with Lower step: it determines corresponding to substrate/phase-change material layers/Air Interface impedance matching condition and the impedance matching condition Shooting condition；Phase-change material layers are enable to be respectively impedance matching condition and from resistance from insulation phase transition using shooting condition Anti- matching status is changed into metal phase, to realize that the back wave to the THz wave of the first surface incidence from substrate carries out amplitude Regulation or modulation.
Compared with prior art, excellent effect of the invention includes at least one in the following contents:
(1) impedance matching phenomenon occurs by phase-change material layers and substrate, and matching phenomenon can make by phase-change material The THz wave reflected amplitude at interface is almost nil, thus realize to reflected terahertz hereby wave significantly dynamic changes of strength regulate and control；
(2) it can be realized the switching in insulation mutually and between impedance matching condition and impedance matching condition and metal phase, It is quick, efficient to regulate and control speed；
(3) it can be realized excellent earth electric field depth of amplitude modulation, for example, electric field amplitude modulation depth may be up to 90% (very More than 92%).
Detailed description of the invention
The description carried out by following accompanying drawings, above and other purpose of the invention and feature will become apparent, Wherein:
Fig. 1 shows the one of the efficient Terahertz dynamic regulation device according to the present invention based on phase-change material impedance matching The structural schematic diagram of a exemplary embodiment；
The VO that Fig. 2 (a)-(d) respectively illustrates with a thickness of 40nm, 110nm, 190nm and 280nm2The cross section of film SEM figure；Fig. 2 (e) shows the VO of different-thickness2The Hysteresis cycle of the film resistor of film；
Fig. 3 (a) shows the reflection detection light path schematic diagram of one exemplary embodiment of the present invention；Fig. 3 (b)-(e) It respectively illustrates under heating state, on a quartz substrate from insulation state to the VO of the different-thickness of metallic state2Film reflector THz The evolution condition of pulse；
Fig. 4 (a)-(d) is respectively illustrated in phase transition process, with a thickness of four of 40nm, 110nm, 190 nm and 280nm VO2The Er of film2Frequency domain spectra；
Fig. 5 shows the VO of 280nm thickness2The THz relative reflection of film (insulation phase, impedance matching condition, metal phase) With the relationship of frequency.
Specific embodiment
Hereinafter, the height based on phase-change material impedance matching that the present invention will be described in detail will be carried out in conjunction with exemplary embodiment Imitate Terahertz dynamic regulation device and method.
Fig. 1 shows the one of the efficient Terahertz dynamic regulation device according to the present invention based on phase-change material impedance matching The structural schematic diagram of a exemplary embodiment.
As shown in Figure 1, in an exemplary embodiment of the present invention, the efficient terahertz based on phase-change material impedance matching Hereby dynamic regulation device includes substrate 1, phase-change material layers 2 and phase transformation excitation unit 3.
Substrate 1 has first surface 1a and second surface 1b away from one another.The thickness of substrate can be 0.1~3mm. Substrate can be selected one of quartz, silicon, sapphire and GaAs etc. and be made, however, the invention is not limited thereto, Qi Taneng It is enough to realize that the material for constituting impedance matching with phase-change material layers and Air Interface also.The first surface 1a of substrate can be towards too Hertz wave incident direction (direction THz as shown in figure 1) setting.THz wave can be incident from the first surface of substrate, for example, Incidence angle can be 15~60 °.
Phase-change material layers are bonded on the second surface of substrate.For example, phase-change material layers can pass through such as inorganic sol- The methods of gel method homoepitaxial is on the second surface of substrate.Phase-change material layers, which have, to be metal phase from insulation phase transition Characteristic.Moreover it is preferred that at least two order of magnitude can occur under shooting condition for the conductivity of phase-change material layers (for example, 3 ~5 orders of magnitude) consecutive variations.The thickness of phase-change material layers is preferably controlled to 5nm~2 μm.Preferably, phase-change material layers can Think vanadium dioxide film.However, the invention is not limited thereto, vanadium trioxide film or titanium pentoxide film can also be used as phase Change material layer.
Phase transformation excitation unit be configured to phase-change material layers generate shooting condition so that phase-change material layers respectively from Insulation phase transition is impedance matching condition and to be changed into metal phase from impedance matching condition, to realize to from substrate first The back wave of the THz wave of surface incidence carry out efficiently, efficiently dynamic regulation, and carry out the electric field amplitude for having excellent The amplitude modulation of modulation depth.Impedance matching condition occurs in substrate/phase-change material layers/Air Interface.Herein, electric field shakes Width modulation depth is defined as (1-Eoff/Eon) * 100%.For example, shooting condition caused by phase transformation excitation unit can be temperature One or more of degree, electric field, laser or pressure excitation etc..
Fig. 2 (a)-(d) shows the VO that thickness is respectively 40nm, 110nm, 190nm and 280nm2The cross section of film SEM figure；Fig. 2 (e) shows the VO of different-thickness2The Hysteresis cycle of the film resistor of film.
In one exemplary embodiment, using inorganic sol-gel method at (10 × 10 squares of vitreous silica substrate Millimeter) on be prepared for VO with different thickness2Film.Referring to fig. 2, it can be seen that for the VO of different-thickness2Film, exhausted The significantly different resistance variations order of magnitude is shown during edge body-metal phase change.Fig. 2 (a)-(d) shows VO2Section Scanning electron microscope (SEM) image, thickness is about 40nm, 110nm, 190nm and 280nm.Fig. 2 (e) shows VO2Square sheet electricity The Hysteresis cycle of resistance.Due to the insulator-metal phase transition in the heating period, the film resistor of every film is greatly reduced.Pass through Increase the thickness of film, transition amplitude is continuously improved.The result shows that thickness of thin layer is the VO of 40nm2The resistance switch amount of film Only 2 orders of magnitude, and then have 4 or more the orders of magnitude with a thickness of the film of 280nm.Inventor indicates that this trend can return Become and results in more defects because the thermal deformation compared with thick film is bigger.These defects will determine metal phase, semiconductor phase and hole Gap coexists, and influences nucleation and growth of the metal group in phase transition process.Thicker film will be such that resistance and photoconductivity generates Change to continuous and larger number grade.Therefore, inventor further studies the VO with different resistance switch characteristics2Come Realize THz regulation and modulation based on impedance matching.
Fig. 3 (a) shows the reflection detection light path schematic diagram of one exemplary embodiment of the present invention；Fig. 3 (b)-(e) It respectively illustrates under heating state, on a quartz substrate from insulation state to the VO of metallic state2Reflect the evolution feelings of THz pulse Condition.In Fig. 3 (b)-(e), VO2The thickness of film is respectively (b) 40nm, (c) 110nm, (d) 190nm and (e) 280nm.
Impedance matching phenomenon is generated by the reflecting interface of optically denser medium to optically thinner medium.When the conductivity of reflecting interface When meeting matching condition, reflection coefficient is close to zero.It is related with optically denser medium to match conductivity.For quartz substrate, when Incidence angle is 35 °, and impedance matching condition is about 2.2mS.As phase-change material, VO2The conductance of order of magnitude variation can be provided Rate reaches impedance matching.
It is measured using the THz-TDS system (terahertz time-domain spectroscopy system) of reflective-mode in insulator-metal phase transition VO in the process2Reflection performance of control.Fig. 3 (a) illustrates reflection detection geometric representation, and the terahertz pulse of p-polarization enters Firing angle is 35 °.Select VO2As reflecting interface layer, impedance matching occurs in quartz/VO2/ Air Interface.First pulse Er1 It is reflected from air/quartz interface, the second pulse Er2 is from quartz/VO2The reflection of/Air Interface.In order to eliminate the wave of THz signal Dynamic, the present exemplary embodiment uses Er1Er is calibrated as reference pulse2Amplitude.
The present exemplary embodiment has the VO of different resistance switch characteristics by design2Film meets matching strip Part, it can be observed that impedance matching.Fig. 3 (b)-(e) shows the VO measured in phase transition process2Reflection THz time-domain signal. The pulse Er of all films1It is of similar shape and amplitude.This is because Er1It is to be reflected from air/quartz interface, Therefore only directly related with incidence angle.Er2Time-domain signal because of VO2Phase transformation and constantly change.For the VO of 40nm thickness2, In phase transition process, Er2Amplitude all monotone decreasing in each case.However, for other three kinds of VO2Film, Er2Initially exist Reach minimum amplitude at impedance matching temperature (Tc), then increases with the reversion of impulse phase (paddy-peak to peak-paddy).This Outside, with VO2The increase of film thickness, Tc are reduced.
It should be noted that although the above exemplary embodiments be realized by temperature condition phase-change material (for example, VO2) phase transition process, however, other electric fields, laser or pressure excitation etc. can also realize the phase transformation of phase-change material Journey.In addition, although not observing the VO containing 40nm thickness in Fig. 3 (b)2Dynamic regulation device impedance matching temperature, But inventor indicates the adjustment with conditions such as temperature, substrate situations, its impedance matching condition can be observed.In addition, on although Exemplary embodiment is stated to the VO of different-thickness2The associated impedances matching status of film is measured and has been analyzed, however, it is necessary to Illustrate, by adjusting phase-change material (for example, VO2) doped chemical and its content, consistency, purity and substrate The conditions such as material and thickness also can adjust the impedance matching condition of the dynamic regulation device of exemplary embodiment of the present, usual phase The continuous change of 2 orders of magnitude or more (being further 3~5 orders of magnitude) occurs under shooting condition for the conductivity of change material layer Change makes it easy to obtain matching status.
Fig. 4 (a)-(d) is respectively illustrated in phase transition process (for example, from 25 DEG C to 95 DEG C), with a thickness of 40nm, 110nm, Four VO of 190nm and 280nm2The Er of film2Frequency domain spectra.Wherein, the solid line with filled symbols indicates pulse polarity reversion Preceding frequency spectrum；And the dotted line with open symbols represents the frequency spectrum after pulse polarity reversion；Curve with hollow five asterisk notation Represent impedance matching temperature TcFrequency spectrum.
Using the Fast Fourier Transform (FFT) (FFT) with Hahn (Hann) time window function, Er can be obtained2Frequency domain Amplitude, as shown in Fig. 4 (a)-(d).Solid line with filled symbols represents TcEr before2Spectrum, and have the void of open symbols Line represents TcEr afterwards2Spectrum.Er2Frequency domain amplitude it is consistent with time domain THz pulse, in 40nm thickness VO2Film it is thermotropic absolutely Monotone decreasing during edge body-metal phase change, as shown in Fig. 4 (a).In addition, in the VO of three other thickness2In film, amplitude Minimum value is arrived first at, is then increased, as shown in Fig. 4 (b)-(d).By TcWhen Terahertz frequency spectrum size at 25 DEG C The size of Terahertz frequency spectrum when comparing, in the VO of 110nm, 190nm and 280nm thickness2In film, it observed on a large scale THz wave is suppressed.Range from Tc to 95 DEG C, this variation show opposite process.Especially, 280nm thickness is thin The frequency domain spectra of film in 65 DEG C in the range from 0.3Thz to 0.9THz close to zero.These results indicate that big THz electric field amplitude Modulation depth is feasible in a reflective mode enabling.
For all four kinds of VO2Film type calculates temperature-dependent Terahertz relative reflection from its THz frequency spectrum Value.Here, by Terahertz relative reflection be positioned in the Terahertz electric field amplitude of each temperature with 25 DEG C respective amplitudes it Than.In order to determine these data, such as transmission matrix can be used to carry out the reflection and transmission coefficients of analog functuion film.
In the reflecting attribute of computing function film, VO need to be determined2Dielectric constant.Herein, Dodd (Drude) has been used Model is to determine VO2The dielectric constant of film, εVO2=ε∝-σDC/iε0ω(1-iωτ).Here, in high frequency limit, ε∞=9 are Dielectric constant, σDCIt is respectively VO with τ2Direct current (DC) conductivity and Diffusion time constant.Maximum DC conductivity can be with F is described using Bu Laigeman effective media theorym(σm-σDC)/(σm+2σDC)+fi(σi-σDC)/(σi+2σDC)=0, wherein σmAnd σiThe respectively conductivity of metal phase and insulation, and fmAnd fi(fm+fi=1) volume of metal phase and the phase that insulate is respectively represented Score.Part metals component is fm=1-1/ { 1+exp ((T-T0)/Δ T) }, wherein T0It is respectively phase transition temperature and gold with Δ T Category-insulator transformation temperature width.Based on transfer matrix, all VO have been obtained2Analog result of the film in 0.5THz.
Fig. 5 shows the VO of 280nm thickness2The THz relative reflection of film (insulation phase, impedance matching condition, metal phase) With the relationship of frequency.
Fig. 5 is shown from 0.3THz to 0.9THz in range, the VO of 280nm thickness2Film (insulation phase, impedance matching shape State, metal phase) THz relative reflection and frequency relationship.For the film of 280nm thickness, in insulation phase and impedance matching Between state, frequency averaging electric field amplitude modulation depth ((1-EImpedance matching condition/EInsulation) * 100%) it is 92.26%, even it is up to 94.5%；Between impedance matching condition and metal phase, frequency averaging electric field amplitude modulation depth ((1-EImpedance matching condition/EMetal)* It 100%) is 96.81%, even up to 97.6%.Compared with THz transmission, the electric field amplitude modulation depth of reflection is obviously more It is deep.
Based on the analysis to transmission matrix, these results can be attributed to film in phase transition process VO2In difference lead Electrically.In phase transition process, the VO of 40nm thickness2Conductivity do not reach impedance matching condition.For 110nm, 190nm and The film of 280nm thickness, during insulator-metal phase transition, conductivity value meets impedance matching condition, and temperature TcWith thin The increase of film thickness and reduce.In addition, most of VO2Modulator switches between insulation and metallic state, and this example The dynamic regulation device of property embodiment is in TcIt is switched between state of insulation or metallic state.Therefore, this exemplary implementation Example can shorten the regulation time, and further improve regulation speed.In addition, the THz pulse of s polarization is also applied for VO2Film Impedance matching；The modulation depth of the THz pulse of s polarization is lower, and its impedance matching temperature is higher than the THz pulse of p-polarization Impedance matching temperature.
In conclusion the above exemplary embodiments are based on VO2Impedance of film during thermotropic insulator-metal phase transition Matching, gives close to perfect THz electric field amplitude modulation depth.By in insulator-metal phase change to its conductivity It actively tunes, is able to observe that VO2Impedance matching.Furthermore, the results showed that the THz modulation depth of impedance matching induction is to thin The resistance switch characteristic of film is sensitive.By the VO for designing different-thickness2Film can obtain 4 in the film of 280nm thickness The resistance variations of the order of magnitude.In addition, obtaining in 0.5THz, VO2Insulation mutually and impedance matching condition between electric field amplitude Modulation depth is 94.5% (intensity modulation depth 99.7%, (1-E2 Impedance matching condition/E2 Insulation) * 100%))；Impedance matching condition with Metal VO2Electric field amplitude modulation depth between phase is 97.6% (intensity modulation depth 99.94%).Above-mentioned example is implemented The result of example is consistent with using the simulation result of famous transfer matrix method.The present exemplary embodiment enables to answer in THz It uses in field to regulate and control and modulate as efficient amplitude using these films.
For summary, one exemplary embodiment of the present invention proposes one kind based on phase-change material (for example, vanadium dioxide Film) impedance matching realizes THz wave significantly reflected amplitude dynamic regulation device.The dynamic regulation device is by substrate (example Such as, quartz, sapphire, silicon etc.), phase-change material layers (for example, vanadium dioxide film) and phase transformation excitation unit composition.The dynamic is adjusted Control device using phase-change material semiconductor-metal phase change during its conductivity at least two order of magnitude consecutive variations spy Property, so that impedance matching phenomenon occurs with base material, and THz wave by phase-change material interface can be made by matching phenomenon Reflected amplitude is almost nil, thus realize to reflected terahertz hereby wave significantly dynamic changes of strength regulate and control.Another of the invention shows Example property embodiment, which is proposed based on phase-change material (for example, vanadium dioxide film) impedance matching, realizes that THz wave is significantly anti- Penetrating amplitude dynamic regulation method can be swashed using one of additional temperature, electric field, laser or pressure excitation or number of ways Phase-change material layers phase transformation is sent out, makes it that impedance matching phenomenon occur with substrate, to realize that efficient THz wave reflection dynamic is adjusted Control.The present invention prepares Terahertz by using the Dynamically functional materials that phase-change material (for example, vanadium dioxide film) is core Wave dynamic regulation or modulation device can solve the problem that current THz devices modulation efficiency is low, modulating speed is slow.
Although having been combined exemplary embodiment above and attached drawing describing the present invention, those of ordinary skill in the art It will be apparent to the skilled artisan that can be carry out various modifications to above-described embodiment in the case where not departing from spirit and scope of the claims.

Claims (9)

1. a kind of efficient Terahertz dynamic regulation device based on phase-change material impedance matching, which is characterized in that the Terahertz Dynamic regulation device is made of substrate, phase-change material layers and phase transformation excitation unit, wherein
The substrate has first surface and second surface away from one another, and the direction of first surface towards THz wave incidence is set It sets；
The phase-change material layers can be metal phase from insulation phase transition, and be incorporated on the second surface of substrate, the phase transformation Material layer is thickness in the vanadium dioxide film of 230~300nm range, vanadium trioxide film or titanium pentoxide film；
Phase transformation excitation unit generate shooting condition so that phase-change material layers respectively from insulation phase transition be impedance matching condition, And it is changed into metal phase from impedance matching condition, to realize the reflection to the THz wave of the first surface incidence from substrate Wave carries out amplitude regulation or modulation, and the impedance matching condition occurs in substrate/phase-change material layers/Air Interface.
2. the efficient Terahertz dynamic regulation device according to claim 1 based on phase-change material impedance matching, feature It is, the consecutive variations of at least two order of magnitude can occur under shooting condition for the conductivity of the phase-change material layers.
3. the efficient Terahertz dynamic regulation device according to claim 2 based on phase-change material impedance matching, feature It is, the consecutive variations of 3~4 orders of magnitude can occur under shooting condition for the conductivity of the phase-change material layers.
4. the efficient Terahertz dynamic regulation device according to claim 1 based on phase-change material impedance matching, feature It is, the range of the thickness control of substrate in 0.1~3mm.
5. the efficient Terahertz dynamic regulation device according to claim 1 based on phase-change material impedance matching, feature It is, the phase-change material layers are vanadium dioxide film of the thickness in 280nm.
6. the efficient Terahertz dynamic regulation device according to claim 1 based on phase-change material impedance matching, feature It is, the substrate is quartz, silicon, sapphire or GaAs.
7. the efficient Terahertz dynamic regulation device according to claim 1 based on phase-change material impedance matching, feature It is, the shooting condition is one or more of temperature, electric field, laser or pressure excitation etc..
8. a kind of efficient Terahertz dynamic regulation method based on phase-change material impedance matching, which is characterized in that the Terahertz Dynamic regulation method is carried out using Terahertz dynamic regulation device as claimed in any of claims 1 to 7 in one of claims.
9. the efficient Terahertz dynamic regulation method according to claim 8 based on phase-change material impedance matching, feature It is, the described method comprises the following steps:
It determines and swashs corresponding to substrate/phase-change material layers/Air Interface impedance matching condition and the impedance matching condition Clockwork spring part；
Phase-change material layers are enable to be respectively impedance matching condition and from impedance matching from insulation phase transition using shooting condition State is changed into metal phase, with realize back wave progress amplitude regulation to the THz wave of first surface incidence from substrate or Modulation.
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