CN101943803A - Structural material for modulation of terahertz waves - Google Patents
Structural material for modulation of terahertz waves Download PDFInfo
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- CN101943803A CN101943803A CN 201010218977 CN201010218977A CN101943803A CN 101943803 A CN101943803 A CN 101943803A CN 201010218977 CN201010218977 CN 201010218977 CN 201010218977 A CN201010218977 A CN 201010218977A CN 101943803 A CN101943803 A CN 101943803A
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Abstract
The invention discloses a structural material for the modulation of terahertz waves, which belongs to the technical field of electronics. The structural material comprises a medium substrate (2) and a vibratron array (1) attached to the surface of the medium substrate (2), wherein the medium substrate (2) is the medium material substrate highly transparent to the terahertz waves; the vibratron array (1) consists of a plurality of vibratron units with the same shape and size; and each vibratron unit is formed by a vanadium dioxide thin film on deposited on the surface of the medium substrate (2). The structural material adopts a medium material highly transparent to the terahertz waves as the substrate to achieve little and stable terahertz wave absorption loss, adopts the vanadium dioxide thin film which is a high-speed phase change material to manufacture the vibratron array, realizes the modulation of the terahertz waves by triggering the phase change of the vanadium dioxide thin film by thermal or laser modulation, and compared with a conventional metal vibratron array-based terahertz modulator, has greater modulation depth.
Description
Technical field
The invention belongs to electronic technology field, relate to terahertz wave band electromagnetic wave modulation technique, particularly be used for THz wave modulation structured material.
Background technology
Terahertz (THz, 1THz=10
12Hz) wave band is meant frequency from 100GHz to 10THz, and the quite wide electromagnetic wave spectrum zone of spectral range between millimeter wave and infrared light is called as " THz space " in the electromagnetic wave spectrum.At present, radio communication is faced with limited frequency spectrum resources and the bandwidth that increases rapidly, the contradiction of high speed business demand.Because Terahertz radio communication theoretical transmission rate can reach 1～10Gb/s, and it is abundant to have the resource of frequency range, and bandwidth is big, advantages such as good confidentiality.Therefore, the communication system of new generation that with the THz wave is communications carrier is just with its low eavesdropping rate, advantage such as high noise immunity, all weather operations, directed standard and enjoy attention, and just progressively become the emphasis of external relevant unit research.
Yet the Terahertz communication technology is not the technology transplant of microwave communication or optical communication technique, but has very many novel characteristics, especially exists many new difficult problems to need to solve at the aspects such as modulation-demodulation technique of terahertz signal.Be applied to the modulation device of Terahertz communication, on structure, size, performance and working method all with microwave and lightwave communication technology in device greatly differ from each other, need carry out new design and development.Doctor C.T.Chen of U.S. Los Alamos National Laboratory in 2006 has proposed a kind of Terahertz modulation device [H.T.Chen based on the super clever material of metal mold electromagnetism (Electromagnetic Metamaterials), et al, Nature, 444,597-600, (2006)].This device is to make up metal electromagentic resonance unit (Resonator Unit) array to form on Si or GaAs semiconductor substrate, thereby change the Terahertz resonance amplitude that the semiconductor substrate carrier concentration influences resonant ring by extra electric field, realize modulation for the THz wave transmission signal.This is the super clever material of electromagnetism (Electromagnetic Metamaterials) of indication, it is a kind of special structured material, generally be vibrotron array distribution by the sub-wavelength yardstick on dielectric substrate and constitute, their functional characteristic mainly is that the physical dimension by substrate properties and resonator is determined.The vibrotron here (Resonator), be called artificial electromagnetic unit (artificial atoms) again, be meant the sub-wavelength structure of various artificial designs, when these sub-wavelength structures are formed the array of some cycles, can produce resonance phenomena to the electromagnetic wave of special frequency channel, thereby cause near transmission, absorption and the reflecting properties of electromagnetic wave resonance band different with other frequency ranges.Typical vibrotron comprise the split ring resonator (Split Ring Resonator, SRR) or metal wire (metallicwires).The super clever material of the metal mold electromagnetism that doctor C.T.Chen proposes adopts the SRR Array Construction on semiconductor chip and form.Utilize the super clever material of this metal mold electromagnetism, not only can realize automatically controlled terahertz signal modulation, can also realize light-operated terahertz signal modulation, its ultimate principle all is to utilize the charge carrier of outfield vitalizing semiconductor substrate to realize the terahertz signal modulation.Yet, charge carrier in the semiconductor is to the absorption highly significant of THz wave, this has limited the raising of Terahertz modulation amplitude to a certain extent, and the present Terahertz modulator that proposes only can reach 50% modulation amplitude, and this has constituted very big restriction to its application.
Summary of the invention
The invention provides a kind of structured material that is used for the THz wave modulation, this structured material can be realized the terahertz signal modulation amplitude up to 80% by means of heat or Laser Modulation.Can be used for systems such as Terahertz radio communication, Terahertz radar.
Technical solution of the present invention is:
A kind of structured material that is used for the THz wave modulation as shown in Figure 1, comprises medium substrate 2 and the vibrotron array 1 that is attached to medium substrate 2 surfaces.Described medium substrate 2 is the dielectric material substrates to the THz wave highly transparent.Described vibrotron array 1 is by a plurality of identical shaped arrays that constitute with vibrotron unit size, and each vibrotron unit is by the vanadium dioxide (VO that is deposited on medium substrate 2 surfaces
2) film formation.
In the technique scheme, the shape of described vibrotron unit can be the shape of arbitrarily existing various vibrotrons unit.Described vanadium dioxide (VO
2) thickness of film is between 0.1～1 micron, its depositing operation can adopt existing various thin film deposition processes.Described dielectric material substrate to the THz wave highly transparent, what adopt in the present invention is quartz glass substrate, its thickness is between 300～1000 microns.
Core concept of the present invention is to adopt dielectric material to the THz wave highly transparent as substrate, adopts vanadium dioxide (VO simultaneously
2) film making vibrotron array.Employing as substrate, is because such material has very little and stable THz wave absorption loss at terahertz wave band to the dielectric material (as quartz glass) of THz wave highly transparent.Adopt vanadium dioxide film to make the vibrotron array, be because vanadium dioxide film is a kind of high-speed phase change material, have insulator one metal phase change characteristic, be monocl insulating material at normal temperatures, and near 68 ℃, change the metal phase of rutile structure into.Be accompanied by the phase transition process from the insulator to the metal, 1000-10000 great variety doubly takes place in the conductivity of vanadium dioxide film, and significant variation also takes place for dielectric and optical property.
The structured material that is used for the THz wave modulation provided by the invention, its principle of work is by means of heat or Laser Modulation, realizes the modulation of THz wave by the character that changes electromagentic resonance modulator material itself.At room temperature, VO
2The vibrotron unit that film constitutes is in the insulation phase, and to the terahertz signal highly transparent, so the total material has very little loss to THz wave in the scope of 0.1～2THz for it and quartz base plate; And at high temperature, VO
2The vibrotron unit that film constitutes is in the metal phase, quartz glass substrate still still insulate, at this moment promptly form one and be similar to the super clever material of metal mold electromagnetism that HT doctor Chen is proposed, can produce resonance to THz wave in certain special frequency channel, the Terahertz transmission significantly reduces near resonant frequency.Therefore, by exciting VO
2The phase transformation of material just can realize the modulation for terahertz signal.
Compared with prior art, the present invention has following characteristics:
1, the structured material that is used for THz wave modulation provided by the invention, by means of heat or Laser Modulation, the character by changing electromagentic resonance modulator material itself rather than the character of medium substrate realize the modulation of THz wave.
2, with respect to existing Terahertz modulator based on metal vibrotron array, the present invention has bigger depth of modulation.Absolute depth of modulation reaches 67%, and depth of modulation reaches 80% relatively.
Description of drawings
Fig. 1 structural representation that is used for the structured material of THz wave modulation provided by the invention.Wherein 1 is the vibrotron unit, and 2 is medium substrate.
Fig. 2 is the VO that the specific embodiment of the present invention adopts
2The temperature variant situation of side's resistance of film.
Fig. 3 is the temperature variant measured result of Terahertz transmissivity of the specific embodiment of the present invention.
Fig. 4 is that the specific embodiment of the present invention is at VO
2The conductivity of film is increased to the Terahertz transmissivity numerical result of 270000S/m from 10S/m.
Embodiment
Be example with line style electromagentic resonance unit below, specify this preparation and test analysis process that is used for the structured material of THz wave modulation provided by the present invention:
Step 1: utilize business software CST Microwave Studio, foundation is used for the structured material model structure of THz wave modulation, wherein vibrotron array 1 is that hypothesis vibrotron unit material is under the prerequisite of perfect metal, optimize the length l of line style vibrotron unit, width w, between the unit apart from t and d to obtain the maximum resonance degree of depth.The acquisition optimal parameter is: l=108 μ m, w=13.5 μ m, t=6 μ m, d=30 μ m.
Step 2: utilize radio frequency magnetron sputtering method, by VO
2Target is 10mm * 10mm at area, the VO of about 0.8 micron thickness of deposition on the quartz glass substrate that thickness is 500 microns
2Film.Fig. 2 has provided the temperature variant resistance variations curve of this film, shows that this material between 340K (67 ℃) insulator-metal phase transition has taken place at 300K (27 ℃), the 76 Ω/ when the 17280 Ω/ the when side of film hinders by 300K significantly is reduced to 340K.
Step 3: the preparation reticle, adopt reactive ion beam (RIE) technology, with 100 watts CF
4/ O
2Plasma etching VO
2Membraneous material forms line style vibrotron cell array, as shown in Figure 1.L=107.25 μ m wherein, w=13.25 μ mt=6.25 μ m, d=30.75 μ m.Because the error of photoetching process, actual size that obtains and Theoretical Calculation be difference slightly.
Step 4: utilize terahertz time-domain spectroscopy system (THz-TDS) that the Terahertz transmission performance of device is tested.Sample is to be placed on the controlled heating platform, and the temperature of this heating platform can be in Fast Heating and cooling between the room temperature to 100 ℃.
Fig. 3 has provided measured result of the invention process.Can see that at room temperature, the transmissivity of Terahertz modulator is very high, the transmissivity below 1THz has surpassed 85%.And along with the rising of temperature, transmissivity constantly reduces, and has produced a resonance near 0.6THz.When temperature was elevated to 340K, the Terahertz transmissivity at the resonant frequency place dropped to 17%.The relative change rate has reached 80%, shows that Terahertz modulator provided by the present invention has very high depth of modulation.
VO
2Insulator-metal phase transition can cause the great variety of conductivity.For the reason that causes the device transmission change is described, utilize business software CST Microwave Studio, calculated the Terahertz transmissivity with VO
2Conductivity variations between relation, as shown in Figure 4.Can see, work as VO
2Conductivity when being 10S/m, i.e. VO
2When being in the insulation attitude, modulator has 84% Terahertz transmissivity, and is very approaching with measured value.And along with the increase of conductivity, transmissivity constantly descends.When conductivity is 35000S/m, begin to occur the electromagentic resonance peak at 0.6THz; When conductivity was increased to 270000S/m, the terahertz signal transmissivity at the resonance peak place dropped to 14%.Therefore, experiment and notional result show VO
2The caused conductivity variations of insulator-metal phase transition, make modulator proposed by the invention produce mudulation effect to the Terahertz transmission signal.
Claims (4)
1. a structured material that is used for the THz wave modulation comprises medium substrate (2) and is attached to the surperficial vibrotron array (1) of medium substrate (2); It is characterized in that described medium substrate (2) is the dielectric material substrate to the THz wave highly transparent; Described vibrotron array (1) is by a plurality of identical shaped arrays that constitute with vibrotron unit size, and each vibrotron unit is formed by the vanadium dioxide film that is deposited on medium substrate (2) surface.
2. the structured material that is used for the THz wave modulation according to claim 1 is characterized in that, the shape of described vibrotron unit is the shape of arbitrarily existing various vibrotrons unit.
3. the structured material that is used for the THz wave modulation according to claim 1 is characterized in that the thickness of described vanadium dioxide film is between 0.1～1 micron, and its depositing operation can adopt existing various thin film deposition processes.
4. the structured material that is used for the THz wave modulation according to claim 1 is characterized in that described dielectric material substrate to the THz wave highly transparent is a quartz glass substrate, and its thickness is between 300～1000 microns.
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Cited By (19)
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| CN102417153A (en) * | 2011-11-21 | 2012-04-18 | 中国科学院物理研究所 | Electrostatically-driven adjustable-Terahertz-frequency-band super absorber with micro cantilever structure |
| CN102682858A (en) * | 2011-03-15 | 2012-09-19 | 深圳光启高等理工研究院 | Wave-absorbing material |
| CN102954607A (en) * | 2011-08-31 | 2013-03-06 | 深圳光启高等理工研究院 | Heat collector and solar water heater with heat collector |
| CN103178351A (en) * | 2013-02-27 | 2013-06-26 | 华中科技大学 | Tunable-frequency Terahertz metamaterials modulator |
| CN103193190A (en) * | 2013-04-11 | 2013-07-10 | 电子科技大学 | Infrared-terahertz dual-band array detector microbridge structure and production method thereof |
| CN103247839A (en) * | 2013-04-02 | 2013-08-14 | 华中科技大学 | Switching-controllable THz wave metamaterial perfect absorber and control method thereof |
| CN103364973A (en) * | 2013-06-29 | 2013-10-23 | 天津大学 | Soft terahertz wave modulator |
| CN103901404A (en) * | 2014-03-14 | 2014-07-02 | 中国工程物理研究院电子工程研究所 | MMAOP framework applicable to terahertz radar and communication system |
| CN105044930A (en) * | 2015-08-14 | 2015-11-11 | 电子科技大学 | Semiconductor terahertz wave optical modulator |
| CN108110396A (en) * | 2017-12-07 | 2018-06-01 | 中国计量大学 | A kind of transparent resonance device of metal-dielectric two-layer hybrid Meta Materials class electromagnetically induced |
| CN108258568A (en) * | 2018-01-12 | 2018-07-06 | 北京工业大学 | It is a kind of to use phase-change material and the film Terahertz light source of magnetostriction materials |
| CN108345130A (en) * | 2018-02-13 | 2018-07-31 | 四川大学 | Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching |
| CN108604637A (en) * | 2016-02-11 | 2018-09-28 | 新加坡科技研究局 | The equipment and device of control electromagnetic wave and its formation and operating method |
| CN108736980A (en) * | 2017-04-20 | 2018-11-02 | 清华大学 | A kind of THz wave means of communication |
| CN110488509A (en) * | 2019-07-31 | 2019-11-22 | 电子科技大学 | A kind of dynamic control super surface device of Terahertz based on vanadium dioxide |
| CN110703466A (en) * | 2019-09-19 | 2020-01-17 | 深圳大学 | Binary phase change light modulation unit, modulation method, light modulation device and equipment |
| CN110850606A (en) * | 2019-11-21 | 2020-02-28 | 中国科学院物理研究所 | Dynamic adjustable structural color device based on phase-change material and preparation method thereof |
| CN113267913A (en) * | 2021-05-29 | 2021-08-17 | 枣庄学院 | Metamaterial modulator |
| CN114280770A (en) * | 2021-11-29 | 2022-04-05 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Terahertz all-silicon off-axis superlens and design method thereof |
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| CN102682858A (en) * | 2011-03-15 | 2012-09-19 | 深圳光启高等理工研究院 | Wave-absorbing material |
| CN102954607A (en) * | 2011-08-31 | 2013-03-06 | 深圳光启高等理工研究院 | Heat collector and solar water heater with heat collector |
| CN102954607B (en) * | 2011-08-31 | 2015-02-04 | 深圳光启高等理工研究院 | Heat collector and solar water heater with heat collector |
| CN102417153B (en) * | 2011-11-21 | 2014-09-03 | 中国科学院物理研究所 | Electrostatically-driven adjustable-Terahertz-frequency-band super absorber with micro cantilever structure |
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| CN103178351A (en) * | 2013-02-27 | 2013-06-26 | 华中科技大学 | Tunable-frequency Terahertz metamaterials modulator |
| CN103178351B (en) * | 2013-02-27 | 2016-08-10 | 华中科技大学 | A kind of THz wave Meta Materials manipulator of frequency-adjustable |
| CN103247839A (en) * | 2013-04-02 | 2013-08-14 | 华中科技大学 | Switching-controllable THz wave metamaterial perfect absorber and control method thereof |
| CN103193190A (en) * | 2013-04-11 | 2013-07-10 | 电子科技大学 | Infrared-terahertz dual-band array detector microbridge structure and production method thereof |
| CN103193190B (en) * | 2013-04-11 | 2015-07-29 | 电子科技大学 | A kind of infrared-Terahertz two waveband detector array micro-bridge structure and preparation method thereof |
| CN103364973A (en) * | 2013-06-29 | 2013-10-23 | 天津大学 | Soft terahertz wave modulator |
| CN103901404A (en) * | 2014-03-14 | 2014-07-02 | 中国工程物理研究院电子工程研究所 | MMAOP framework applicable to terahertz radar and communication system |
| CN103901404B (en) * | 2014-03-14 | 2016-05-11 | 中国工程物理研究院电子工程研究所 | Be applicable to the MMAOP framework of Terahertz radar and communication system |
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| CN108258568B (en) * | 2018-01-12 | 2020-04-17 | 北京工业大学 | Thin film terahertz light source using phase change material and magnetostrictive material |
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| CN108345130A (en) * | 2018-02-13 | 2018-07-31 | 四川大学 | Efficient Terahertz dynamic regulation device and method based on phase-change material impedance matching |
| CN110488509A (en) * | 2019-07-31 | 2019-11-22 | 电子科技大学 | A kind of dynamic control super surface device of Terahertz based on vanadium dioxide |
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| CN110850606A (en) * | 2019-11-21 | 2020-02-28 | 中国科学院物理研究所 | Dynamic adjustable structural color device based on phase-change material and preparation method thereof |
| CN113267913A (en) * | 2021-05-29 | 2021-08-17 | 枣庄学院 | Metamaterial modulator |
| CN113267913B (en) * | 2021-05-29 | 2022-10-04 | 枣庄学院 | Metamaterial modulator |
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Application publication date: 20110112 |