CN101551568A - Microstrip resonance structure Terahertz wave modulation apparatus and method thereof - Google Patents
Microstrip resonance structure Terahertz wave modulation apparatus and method thereof Download PDFInfo
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- CN101551568A CN101551568A CNA200910098626XA CN200910098626A CN101551568A CN 101551568 A CN101551568 A CN 101551568A CN A200910098626X A CNA200910098626X A CN A200910098626XA CN 200910098626 A CN200910098626 A CN 200910098626A CN 101551568 A CN101551568 A CN 101551568A
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Abstract
The invention discloses a microstrip resonance structure Terahertz wave modulation apparatus and the method thereof. The apparatus comprises a Terahertz wave source, a microstrip resonance structure array, a high-resistance silicon substrate, a Terahertz wave detector and a modulatable semiconductor laser; the microstrip resonance structure array is sputtered on the high-resistance silicon substrate; the Terahertz wav from the Terahertz wave source is propagated to the microstrip resonance structure array, and is propagated out through the Terahertz wave detector by the Terahertz wave modulated by the high resistance silicon substrate; the modulatable semiconductor laser is disposed on the same direction of the Terahertz wave source; the included angle between the laser shot direction of the modulatable semiconductor laser and the incidence direction of the Terahertz wave from the Terahertz wave source is 0-30 degrees; and the microstrip resonance structure array is composed by a plurality of microstrip resonance structure units. The invention achieves the advantages of high modulation speed, large modulation bandwidth, small size, compact, easily machined, and simple and convenient operation; is not sensitive to Terahertz wave, can meet the high speed communication demand of Terahertz wave.
Description
Technical field
The present invention relates to the THz wave applied technical field, be specifically related to a kind of microstrip resonance structure Terahertz wave modulation apparatus and method thereof.
Background technology
Radio communication is faced with limited frequency spectrum resource and the bandwidth that increases rapidly, the contradiction of high speed business demand.(THz, 1THz=10E+12Hz) communication is meant the space communtication of carrying out as information carrier with THz wave to Terahertz.Because THz wave between microwave and far red light, is in the transition field of electronics to photonics, thus its integrated microwave communication and optical communication a bit.For microwave communication: 1) capacity of Terahertz communications is bigger.The frequency range of THz wave between the 10THz, exceeds 1～4 order of magnitude than microwave communication at 0.1THz, and the wireless transmission rate up to 10Gb/s can be provided, than the fast hundreds of of current super-broadband tech even thousands of times; 2) terahertz wave beam is narrower, directivity is better, can survey littler target and be decided to be more accurately; 3) THz wave has better confidentiality and antijamming capability, is not subjected to the influence of distant place electronic interferences, even the third party also be difficult to receive the Terahertz signal of communication in the locality, can be implemented in the secret communication in 2～5Km scope; 4) because the THz wave wavelength is shorter relatively, finish under the situation of said function, the size of antenna can be done forr a short time, and other system architecture also can do simplyr, economical.For optical communication: 1) 1/40 the THz wave that is about visible light with photon energy is as information carrier, and energy efficiency is higher; 2) THz wave has the ability that better penetrates sand and dust smog, and it can realize round-the-clock work.THz wave is by atmosphere the time, the strong absorption that causes owing to water vapor, poor efficiency and at present optionally in the Terahertz source low relatively emissive power can bring tangible adverse effect to Terahertz communication, but, along with the breakthrough day by day of high-power Terahertz light source, highly sensitive Detection Techniques and high stability system, the Terahertz communication that occupies a lot of advantages will be pointed the day and await for it.
At present, the Terahertz wave source that is used for carrying out THz wave communication mainly contains: the continuous T Hz ripple of (1) Gunns diode emission.The Gunns diode output power is higher, but Gunns diode frequency is non-adjustable, can be used for the THz wave communication of fixed frequency.(2) quantum cascade laser.Quantum cascade laser may play a significant role in following THz wave communication, but its operation also needs sub-cooled (liquid helium or liquid nitrogen) at present, and low frequency output (＜2THz) very difficult, the frequency adjustable scope is little.(3) backward wave oscillator (BWO).The advantage of BWO is can realize tuning and adopt different carcinotrons can select different output frequencies, and its output frequency can cover 0.1～1.5THz at present, and the space quality of output wave is better, can be used for THz wave communication.The application of BWO at present, or be used for spectrum analysis, or be used for the imaging detection, and BWO is applied to the THz wave communication, still there is not such technology both at home and abroad.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of microstrip resonance structure Terahertz wave modulation apparatus and method thereof are provided.
Microstrip resonance structure Terahertz wave modulation apparatus comprises the Terahertz wave source, little band resonant structure array, the High Resistivity Si matrix, terahertz wave detector, the semiconductor laser that can modulate, sputter has little band resonant structure array on the High Resistivity Si matrix, the THz wave vertical transmission of being sent by the Terahertz wave source is to little band resonant structure array, and the THz wave of modulating by the High Resistivity Si matrix spreads out of through terahertz wave detector, the equidirectional semiconductor laser that to modulate that is provided with at the Terahertz wave source, angle is 0 °～30 ° between the THz wave incident direction that the Laser emission direction of the semiconductor laser that can modulate and Terahertz wave source send, little band resonant structure array is made up of a plurality of little band resonant structures unit, little band resonant structure unit is circular, circle constitutes annulus in being provided with in the circle, vertically be provided with two rectangular strips in annulus inside diameter direction, two rectangular strips are divided into four parts with annulus, open a gap in the center of every part of annulus.
The operation wavelength of the described semiconductor laser of modulating is 680～900nm, power 5～500mW, and modulating speed is 1Mb/s～1Gb/s.A plurality of little band resonant structures unit is 30 * 30～200 * 200; The diameter of little band resonant structure unit is 50～100 μ m, and thickness is 200～1000nm.Little band resonant structure array cycle is 50～70 μ m.The refractive index of High Resistivity Si matrix is 3.4～3.8, and thickness is 0.4～1.0mm, and resistivity is 1000～10000 Ω cm.The annulus width of little band resonant structure unit is 3～6 μ m, and the width of rectangular strip is 3～6 μ m, and notch diameter is 1～2 μ m.The Terahertz wave source is backward wave oscillator BWO.Terahertz wave detector is the Xiao Jite diode.
The microstrip resonance structure Terahertz wave modulator approach is: when the semiconductor laser that can modulate does not send laser, little band resonant structure array on the High Resistivity Si matrix produces resonance, THz wave is produced very strong absorption, the THz wave vertical transmission of being sent by the Terahertz wave source can't be passed to terahertz wave detector by the High Resistivity Si matrix to little band resonant structure array; When the laser that sends when the semiconductor laser that can modulate is injected into little band resonant structure array, the High Resistivity Si matrix produces photo-generated carrier, little band resonant structure array no longer produces resonance on the High Resistivity Si matrix, absorption to THz wave is very weak, the THz wave vertical transmission of being sent by the Terahertz wave source is to little band resonant structure array, and the THz wave by the modulation of High Resistivity Si matrix spreads out of through terahertz wave detector; The semiconductor laser control that utilization can be modulated is injected into the laser on little band resonant structure array, thereby control High Resistivity Si matrix produces photo-generated carrier, be controlled at the resonance of little band resonant structure array of making on the High Resistivity Si matrix at last, realize signal loading on THz wave.
It is fast that advantage of the present invention is that microstrip resonance structure Terahertz wave modulation apparatus has modulating speed, and modulation band-width is big, and size is little, compact conformation, and processing is simple to operation easily, and is insensitive to terahertz polarization, satisfies THz wave high-speed communication demand.
Description of drawings
Fig. 1 (a) is the microstrip resonance structure Terahertz wave modulation apparatus synoptic diagram;
Fig. 1 (b) is little band resonant structure array distribution synoptic diagram;
Fig. 1 (c) is little band resonant structure cell schematics;
Fig. 2 (a) is that the semiconductor laser that can modulate is not when sending laser, little band resonant structure array on the High Resistivity Si matrix produces resonance, THz wave is produced very strong absorption, the THz wave vertical transmission of being sent by the Terahertz wave source is to little band resonant structure array, 0.87THz the THz wave of frequency can't pass to terahertz wave detector by the High Resistivity Si matrix, terahertz wave detector detection event synoptic diagram;
Fig. 2 (b) is that the semiconductor laser that can modulate is when sending laser and being injected into little band resonant structure array, the High Resistivity Si matrix produces photo-generated carrier, little band resonant structure array no longer produces resonance on the High Resistivity Si matrix, absorption to THz wave is very weak, the THz wave vertical transmission of being sent by the Terahertz wave source is to little band resonant structure array, 0.87THz the THz wave of frequency is by the High Resistivity Si matrix, the THz wave of modulation spreads out of terahertz wave detector detection event synoptic diagram through terahertz wave detector;
Among the figure: Terahertz wave source 1, little band resonant structure array 2, High Resistivity Si matrix 3, terahertz wave detector 4, the semiconductor laser 5 that can modulate.
Embodiment
As shown in Figure 1, microstrip resonance structure Terahertz wave modulation apparatus comprises Terahertz wave source 1, little band resonant structure array 2, High Resistivity Si matrix 3, terahertz wave detector 4, the semiconductor laser 5 that can modulate, sputter has little band resonant structure array 2 on High Resistivity Si matrix 3, the THz wave vertical transmission of being sent by Terahertz wave source 1 is to little band resonant structure array 2, and the THz wave of modulating by High Resistivity Si matrix 3 spreads out of through terahertz wave detector 4, the equidirectional semiconductor laser 5 that to modulate that is provided with at Terahertz wave source 1, angle is 0 °～30 ° between the THz wave incident direction that the Laser emission direction of the semiconductor laser 5 that can modulate and Terahertz wave source 1 send, little band resonant structure array 2 is made up of a plurality of little band resonant structures unit, little band resonant structure unit is circular, circle constitutes annulus in being provided with in the circle, vertically be provided with two rectangular strips in annulus inside diameter direction, two rectangular strips are divided into four parts with annulus, open a gap in the center of every part of annulus.
The operation wavelength of the described semiconductor laser of modulating 5 is 680～900nm, power 5～500mW, and modulating speed is 1Mb/s～1Gb/s.A plurality of little band resonant structures unit is 30 * 30～200 * 200; The diameter of little band resonant structure unit is 50～100 μ m, and thickness is 200～1000nm.Little 2 cycles of band resonant structure array are 50～70 μ m.The refractive index of High Resistivity Si matrix 3 is 3.4～3.8, and thickness is 0.4～1.0mm, and resistivity is 1000～10000 Ω cm.The annulus width of little band resonant structure unit is 3～6 μ m, and the width of rectangular strip is 3～6 μ m, and notch diameter is 1～2 μ m.Terahertz wave source 1 is backward wave oscillator BWO.Terahertz wave detector 4 is the Xiao Jite diode.
The microstrip resonance structure Terahertz wave modulator approach is: when the semiconductor laser 5 that can modulate does not send laser, little band resonant structure array 2 on High Resistivity Si matrix 3 produces resonance, THz wave is produced very strong absorption, the THz wave vertical transmission of being sent by Terahertz wave source 1 can't be passed to terahertz wave detector 4 by High Resistivity Si matrix 3 to little band resonant structure array 2; When the laser that sends when the semiconductor laser 5 that can modulate is injected into little band resonant structure array 2, High Resistivity Si matrix 3 produces photo-generated carrier, little band resonant structure array 2 no longer produces resonance on High Resistivity Si matrix 3, absorption to THz wave is very weak, the THz wave vertical transmission of being sent by Terahertz wave source 1 is to little band resonant structure array 2, and the THz wave by 3 modulation of High Resistivity Si matrix spreads out of through terahertz wave detector 4; Semiconductor laser 5 controls that utilization can be modulated are injected into the laser on little band resonant structure array 2, thereby control High Resistivity Si matrix 3 produces photo-generated carrier, be controlled at the resonance of little band resonant structure array 2 of making on the High Resistivity Si matrix 3 at last, realize signal loading on THz wave.
The course of work of the present invention is: the backward wave oscillator BWO that selects the sale of Microtech company is as the Terahertz source, computer control BWO output THz wave changes in the 0.6-0.9THz frequency range, choose the resonance Terahertz frequency of little band resonant structure array, the continuous THz wave of resonance frequency is sent in the Terahertz source.When the semiconductor laser that can modulate does not send laser, little band resonant structure array on the High Resistivity Si matrix produces resonance, THz wave is produced very strong absorption, the THz wave vertical transmission of being sent by the Terahertz wave source is to little band resonant structure array, the resonance frequency THz wave of little band resonant structure array can't pass to terahertz wave detector by the High Resistivity Si matrix, at this moment, the schottky diode terahertz wave detector of utilizing BWO to carry is surveyed the resonance frequency THz wave less than little band resonant structure array; When the semiconductor laser that can modulate sends laser and is injected into little band resonant structure array, the High Resistivity Si matrix produces photo-generated carrier, little band resonant structure array no longer produces resonance on the High Resistivity Si matrix, absorption to THz wave is very weak, the THz wave vertical transmission of being sent by the Terahertz wave source is to little band resonant structure array, the resonance frequency THz wave of little band resonant structure array is by the High Resistivity Si matrix, the THz wave of modulation spreads out of through terahertz wave detector, at this moment, the schottky diode terahertz wave detector of utilizing BWO to carry can detect the resonance frequency THz wave of little band resonant structure array.Therefore, the semiconductor laser control that utilization can be modulated is injected into the laser on little band resonant structure array, thereby control High Resistivity Si matrix produces photo-generated carrier, is controlled at the resonance of little band resonant structure array of making on the High Resistivity Si matrix at last, realizes signal loading on THz wave.
Embodiment
0.87THz the THz wave of frequency modulation:
The BWO that selects the Microtech sale is as the Terahertz source, and wherein the carcinotron model is elected QS1-900ov81 (frequency is tunable in the 0.6-0.9THz frequency range) as, and computer control BWO output wave changes in the 0.6-0.9THz frequency range.Selecting the THz wave frequency of Terahertz communication usefulness is 0.87THz, the operation wavelength of the semiconductor laser that can modulate is 680nm, power 50mW, angle is 15 ° between the THz wave incident direction that the Laser emission direction of the semiconductor laser that can modulate and Terahertz wave source send.Little band resonant structure unit is 60 * 60; The diameter of little band resonant structure unit is 80 μ m, and thickness is 300nm.Little band resonant structure array cycle is 55 μ m.The refractive index of High Resistivity Si matrix is 3.6, and thickness is 0.5mm, and resistivity is 10000 Ω cm.The annulus width of little band resonant structure unit is 5 μ m, and the width of rectangular strip is 4 μ m, and notch diameter is 2 μ m.When the semiconductor laser that acquisition can be modulated does not send laser, the THz wave vertical transmission of being sent by the Terahertz wave source is to little band resonant structure array, 0.87THz the THz wave of frequency can't pass to terahertz wave detector by the High Resistivity Si matrix, terahertz wave detector detection event such as accompanying drawing 2 (a); When the semiconductor laser that can modulate sends laser and is injected into little band resonant structure array, the THz wave vertical transmission of being sent by the Terahertz wave source is to little band resonant structure array, 0.87THz the THz wave of frequency is by the High Resistivity Si matrix, the THz wave of modulation spreads out of terahertz wave detector detection event such as accompanying drawing 2 (b) through terahertz wave detector.The extinction ratio of this light-operated microstrip resonance structure Terahertz wave modulation apparatus is 50dB, and modulating speed reaches 1Gb/s.
Claims (9)
1. microstrip resonance structure Terahertz wave modulation apparatus, it is characterized in that comprising Terahertz wave source (1), little band resonant structure array (2), High Resistivity Si matrix (3), terahertz wave detector (4), the semiconductor laser that can modulate (5), go up sputter at High Resistivity Si matrix (3) little band resonant structure array (2) is arranged, the THz wave vertical transmission of being sent by Terahertz wave source (1) is to little band resonant structure array (2), and the THz wave of modulating by High Resistivity Si matrix (3) spreads out of through terahertz wave detector (4), the equidirectional semiconductor laser (5) that to modulate that is provided with at Terahertz wave source (1), angle is 0 °～30 ° between the THz wave incident direction that the Laser emission direction of the semiconductor laser that can modulate (5) and Terahertz wave source (1) send, little band resonant structure array (2) is made up of a plurality of little band resonant structures unit, little band resonant structure unit is circular, circle constitutes annulus in being provided with in the circle, vertically be provided with two rectangular strips in annulus inside diameter direction, two rectangular strips are divided into four parts with annulus, open a gap in the center of every part of annulus.
2. a kind of microstrip resonance structure Terahertz wave modulation apparatus according to claim 1, the operation wavelength that it is characterized in that the described semiconductor laser of modulating (5) is 680～900nm, power 5～500mW, modulating speed is 1Mb/s～1Gb/s.
3. a kind of microstrip resonance structure Terahertz wave modulation apparatus according to claim 1 is characterized in that described a plurality of little band resonant structures unit is 30 * 30～200 * 200; The diameter of little band resonant structure unit is 50～100 μ m, and thickness is 200～1000nm.
4. a kind of microstrip resonance structure Terahertz wave modulation apparatus according to claim 1 is characterized in that described little band resonant structure array (2) cycle is 50～70 μ m.
5. a kind of microstrip resonance structure Terahertz wave modulation apparatus according to claim 1, the refractive index that it is characterized in that described High Resistivity Si matrix (3) is 3.4～3.8, and thickness is 0.4～1.0mm, and resistivity is 1000～10000 Ω cm.
6. a kind of microstrip resonance structure Terahertz wave modulation apparatus according to claim 1 is characterized in that the annulus width of described little band resonant structure unit is 3～6 μ m, and the width of rectangular strip is 3～6 μ m, and notch diameter is 1～2 μ m.
7. a kind of microstrip resonance structure Terahertz wave modulation apparatus according to claim 1 is characterized in that described Terahertz wave source (1) is backward wave oscillator BWO.
8. a kind of microstrip resonance structure Terahertz wave modulation apparatus according to claim 1 is characterized in that described terahertz wave detector (4) is the Xiao Jite diode.
9. microstrip resonance structure Terahertz wave modulator approach that use is installed according to claim 1, it is characterized in that when the semiconductor laser that can modulate (5) when not sending laser, little band resonant structure array (2) on High Resistivity Si matrix (3) produces resonance, THz wave is produced very strong absorption, the THz wave vertical transmission of being sent by Terahertz wave source (1) can't be passed to terahertz wave detector (4) by High Resistivity Si matrix (3) to little band resonant structure array (2); When the laser that sends when the semiconductor laser that can modulate (5) is injected into little band resonant structure array (2), High Resistivity Si matrix (3) produces photo-generated carrier, go up little band resonant structure array (2) at High Resistivity Si matrix (3) and no longer produce resonance, absorption to THz wave is very weak, the THz wave vertical transmission of being sent by Terahertz wave source (1) is to little band resonant structure array (2), and the THz wave by High Resistivity Si matrix (3) modulation spreads out of through terahertz wave detector (4); The semiconductor laser that utilization can be modulated (5) control is injected into the laser on little band resonant structure array (2), thereby control High Resistivity Si matrix (3) produces photo-generated carrier, be controlled at High Resistivity Si matrix (3) at last and go up the resonance of little band resonant structure array (2) of making, realize signal loading on THz wave.
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| CN101943803A (en) * | 2010-07-07 | 2011-01-12 | 电子科技大学 | Structural material for modulation of terahertz waves |
| CN102109686A (en) * | 2010-11-03 | 2011-06-29 | 天津大学 | Terahertz wave photochopper based on silicon-based vanadium oxide thin film and using method thereof |
| CN102520532A (en) * | 2011-12-19 | 2012-06-27 | 东南大学 | High-speed terahertz modulator and production method thereof |
| CN104297844A (en) * | 2014-10-31 | 2015-01-21 | 中国计量学院 | TeraHertz wave polarization beam splitter of periodically staggered rectangular structure |
| CN105044930A (en) * | 2015-08-14 | 2015-11-11 | 电子科技大学 | Semiconductor terahertz wave optical modulator |
| CN105116565A (en) * | 2015-09-18 | 2015-12-02 | 首都师范大学 | Terahertz pulse width modulator device and modulation method |
| CN105445965A (en) * | 2015-12-18 | 2016-03-30 | 成都浩博依科技有限公司 | Silicon-based full light-controlled high-speed broadband terahertz modulator and preparation method thereof |
| CN108199782A (en) * | 2018-02-27 | 2018-06-22 | 桂林电子科技大学 | A kind of transmission-type THz wave encoder and coded system based on plasma device |
| CN108604637A (en) * | 2016-02-11 | 2018-09-28 | 新加坡科技研究局 | The equipment and device of control electromagnetic wave and its formation and operating method |
| CN110247289A (en) * | 2019-07-25 | 2019-09-17 | 桂林航天工业学院 | A kind of Terahertz modulator convenient for frequency modulation |
| CN110703243A (en) * | 2019-09-29 | 2020-01-17 | 天津大学 | Novel silicon-based terahertz active array imaging technology based on regenerative reception principle |
| CN112054076A (en) * | 2020-09-23 | 2020-12-08 | 成都能太科技有限公司 | Terahertz Fano resonance super-structure device capable of being efficiently and optically controlled |
| CN113267913A (en) * | 2021-05-29 | 2021-08-17 | 枣庄学院 | Metamaterial modulator |
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| CN101943803A (en) * | 2010-07-07 | 2011-01-12 | 电子科技大学 | Structural material for modulation of terahertz waves |
| CN102109686A (en) * | 2010-11-03 | 2011-06-29 | 天津大学 | Terahertz wave photochopper based on silicon-based vanadium oxide thin film and using method thereof |
| CN102109686B (en) * | 2010-11-03 | 2012-07-11 | 天津大学 | Terahertz wave photochopper based on silicon-based vanadium oxide thin film and using method thereof |
| CN102520532A (en) * | 2011-12-19 | 2012-06-27 | 东南大学 | High-speed terahertz modulator and production method thereof |
| CN102520532B (en) * | 2011-12-19 | 2014-07-09 | 东南大学 | High-speed terahertz modulator and production method thereof |
| CN104297844B (en) * | 2014-10-31 | 2017-03-29 | 中国计量学院 | The terahertz polarization beam splitter of periodic staggered rectangular structure |
| CN104297844A (en) * | 2014-10-31 | 2015-01-21 | 中国计量学院 | TeraHertz wave polarization beam splitter of periodically staggered rectangular structure |
| CN105044930A (en) * | 2015-08-14 | 2015-11-11 | 电子科技大学 | Semiconductor terahertz wave optical modulator |
| CN105116565A (en) * | 2015-09-18 | 2015-12-02 | 首都师范大学 | Terahertz pulse width modulator device and modulation method |
| CN105445965A (en) * | 2015-12-18 | 2016-03-30 | 成都浩博依科技有限公司 | Silicon-based full light-controlled high-speed broadband terahertz modulator and preparation method thereof |
| CN108604637A (en) * | 2016-02-11 | 2018-09-28 | 新加坡科技研究局 | The equipment and device of control electromagnetic wave and its formation and operating method |
| CN108199782A (en) * | 2018-02-27 | 2018-06-22 | 桂林电子科技大学 | A kind of transmission-type THz wave encoder and coded system based on plasma device |
| CN108199782B (en) * | 2018-02-27 | 2021-01-05 | 桂林电子科技大学 | Transmission type terahertz wave encoder and encoding system based on plasma device |
| CN110247289A (en) * | 2019-07-25 | 2019-09-17 | 桂林航天工业学院 | A kind of Terahertz modulator convenient for frequency modulation |
| CN110703243A (en) * | 2019-09-29 | 2020-01-17 | 天津大学 | Novel silicon-based terahertz active array imaging technology based on regenerative reception principle |
| CN112054076A (en) * | 2020-09-23 | 2020-12-08 | 成都能太科技有限公司 | Terahertz Fano resonance super-structure device capable of being efficiently and optically controlled |
| CN113267913A (en) * | 2021-05-29 | 2021-08-17 | 枣庄学院 | Metamaterial modulator |
| CN113267913B (en) * | 2021-05-29 | 2022-10-04 | 枣庄学院 | Metamaterial modulator |
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Open date: 20091007 |