CN104793427B - graphene photonic crystal terahertz amplifier - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 84
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000000737 periodic effect Effects 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 26
- 239000002356 single layer Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 230000003321 amplification Effects 0.000 abstract description 17
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 14
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 238000009434 installation Methods 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000005086 pumping Methods 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
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- 238000003384 imaging method Methods 0.000 description 3
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- 230000009286 beneficial effect Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
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- 238000011160 research Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
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- 229910002804 graphite Inorganic materials 0.000 description 1
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- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
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- Optics & Photonics (AREA)
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of graphene photonic crystal Terahertz amplifier installation and its regulation and control method.The present invention is using the electrical conductivity of the graphene under specified temp and bias terahertz wave band is negative value the characteristics of, using graphene as THz wave gain media, the function of Terahertz amplifier is realized using periodic " graphene monocrystalline silicon layer " 1-D photon crystal structure.Device on the graphene of periodic arrangement by being alternatively introduced into positive and negative electrode, to apply different biass, realizes the active control of THz wave amplification and working frequency.The device combines 1-D photon crystal structure with the Terahertz gain characteristic of graphene, pass through the cascade of multiple graphenes and photon band gap, slower rays enhancing, F P effects and the mode competition effect of 1-D photon crystal structure, the gain amplification coefficient and Q values of the THz wave in single transmission mode are effectively improved, realizes the single-frequency THz wave output of high-gain, high q-factor.The device is operated in 1 2THz, and working frequency can tune with operating voltage, and more than 30dB, Q values are a kind of large format high-performance Terahertz amplifiers more than 50 for maximum output gain.
Description
Technical field
The invention belongs to Terahertz science and technology field, and in particular to a kind of THz wave amplifier and its method of work.
Background technology
THz wave refers to frequency in 0.1-10THz (1THz=1012THz, corresponding wavelength are 3mm~30 μm) scope
Electromagnetic wave, this wave band are the crossing domains of electronics and photonic propulsion between microwave and light wave.Because it is in electromagnetic spectrum
In residing specific position, THz wave has many advantageous characteristics such as perspectivity, security, high s/n ratio, in spectrum, imaging
There is very important academic and application value with fields such as communications.But the energy conversion efficiency in existing terahertz emission source
Low, radiant power is extremely limited, turns into the primary bottleneck of limitation Terahertz Technology development.In addition, THz wave is in transmitting procedure
In, by the strong absorption of vapor and other polar molecule materials so that THz wave be difficult to realize long-distance transmissions and
Detection.Therefore, produced, in transmission and detection process in THz wave, there is an urgent need to relevant put can be carried out to THz wave
Big and energy relay active device, i.e. Terahertz amplifier.
Image intensifer provides energy by electrically or optically pumping to gain media, and incident light is excited spoke by gain media
Penetrate, so as to produce relevant amplification to incident intensity.The gain coefficient of gain media is g, incident intensity I0Light and gain media
Operating distance be l, then output intensity is I=I0exp(gl).When the electrical conductivity of material is bears, carrier is realized in material
Population inversion, now g ＞ 0, wherein gain coefficient are directly proportional to the negative electricity conductance of material.Light by after amplifier be exaggerated
Multiple is typically represented by gain (dB)：
G=10logI/I0
However, because terahertz wave band lacks effective gain media, the research of Terahertz amplifier and laser and hair
Exhibition is slower, and at present in the frequency range less than 0.3THz, terahertz can be realized using solidstate electronics or vacuum electronics device
Hereby effective amplification of ripple, and put in the frequency range higher than 3THz, the gain that can realize THz wave using QCL
The output of big and laser.But this most typical terahertz wave band in 0.3-3THz, it there is no the Terahertz amplifier and laser of maturation
Device.
Graphene be by individual layer or several layers of carbon atoms it is tightly packed into bi-dimensional cellular shape lattice structure monocrystalline function material
Material, wherein single layer of carbon atom is referred to as single-layer graphene, and several layers of carbon atoms are referred to as multi-layer graphene, and its more property of the number of plies more tend to
In graphite.Graphene special zero band gap level structure and carrier relaxation characteristic, make it have the photoelectric properties of uniqueness.In recent years
Come, on graphene especially single-layer graphene visible ray, in infrared and terahertz wave band waveguide, modulator, detector,
Laser is largely reported, therefore the research of graphene has broad prospects with application.Light or electric pumping graphene can produce
Population inversion, at specific temperature and excitation, its electrical conductivity can become negative value in Terahertz frequency range.Due to this characteristic,
So that graphene can be used as THz wave gain media so that it turns into very potential Terahertz amplifier and laser.
But the graphene Terahertz amplifier reported at present focuses primarily upon the principle meter of electrical conductivity and gain coefficient
Calculate, also have using single graphene layer add base material be used as device architecture, by the use of visible or near infrared light as pumping excitation,
To ＞ 3THz, the electromagnetic wave band infrared into is amplified.Because the thickness of graphene is minimum, less than 1nm, although it is in terahertz
Hereby the gain coefficient of wave band is very big, but the multiplication factor of amplifier is very limited.In a word, 0.3-3THz wave bands are no at present can
Capable Terahertz amplifier schema report, existing scheme gain is low, Q values are small, tuning range is small, pump conversion efficiency is low.Therefore,
Needing to combine under different temperatures and excitation, graphene designs new graphene device structure in the dielectric property of terahertz wave band,
High-performance Terahertz amplifier could be obtained.
The content of the invention
It is an object of the invention to provide a kind of graphene photonic crystal Terahertz amplifier, solves terahertz in background technology
The key technical problems such as the hereby gain of amplifier is low, Q values are small, tuning range is small, pump conversion efficiency is low.
The technical scheme is that：It is in terahertz wave band using the electrical conductivity in specified temp and graphene under bias
The characteristic of negative value, using graphene as THz wave gain media, using the one-dimensional photon of periodically " graphene-monocrystalline silicon layer "
Crystal structure realizes the function of Terahertz amplifier.Device on the graphene of periodic arrangement electrically by being alternatively introduced into
Positive and negative electrode, the electrical pumping pumping amplification of device is realized by being biased.In photonic propulsion, by 1-D photon crystal knot
Structure combines with the Terahertz gain characteristic of graphene, passes through the cascades of multiple graphenes and 1-D photon crystal structure
Photon band gap, slower rays enhancing, F-P effects and mode competition effect, are effectively improved the increasing of the THz wave in transmission mode
Benefit and Q values, by changing operating voltage and temperature, regulate and control the terahertz optics property of graphene, realize high-gain, high q-factor,
Tunable single-frequency THz wave output.
Graphene photonic crystal Terahertz amplifier includes：Graphene, monocrystalline silicon layer, positive electricity including periodic arrangement
Pole, negative electrode, wherein graphene and monocrystalline silicon layer periodically are alternately arranged to form 1-D photon crystal structure, " graphene-monocrystalline
Silicon layer " the cycle number of plies is no less than 10.The thickness of every layer of monocrystalline silicon layer is 20 μm, and resistivity is more than 100 Ω cm, covers thereon
Graphene, its thickness are less than 1nm, and graphene edge surrounding plates the annular copper band 20 μm wide, 100nm is thick as electrode, in the cycle
Property arrangement graphene on be alternately arranged as positive electrode and negative electrode, and each positive and negative electrode is together in parallel respectively.In device
The heart is THz wave clear aperature, and no metal electrode stops.
The method of work of graphene photonic crystal Terahertz amplifier is：In 4-30K low temperature ranges, between positive and negative electrode
Apply 0.5-10V Dc biases, the vertical normal incidence graphenic surface of THz wave, list can be obtained in 1-2THz frequency ranges
The amplification output of frequency high-gain high q-factor THz wave.The device carries out relevant amplification for single-frequency THz wave, and it amplifies work frequency
Rate reaches maximum output with operating temperature and bias voltage continuously adjustable, each working frequency at corresponding temperature and bias
Gain.Wherein under fixed temperature, with increasing for bias voltage, work amplification frequency increases to high-frequency mobile, during this
Benefit is changed from small to big, and is gradually reduced again after reaching optimum value；Under fixed bias voltage, with the rise of operating temperature, work is put
Big frequency is equally also changed from small to big to high-frequency mobile, gain, is gradually reduced again after reaching optimum value.
The beneficial effects of the invention are as follows：1. the electrical conductivity of specified temp and the lower graphene of bias is make use of in terahertz wave band
For the photoelectric characteristic of negative value, using graphene as THz wave gain media, solve and lack increasing in 0.1-3THz band limits
The problem of beneficial dielectric material；2. 1-D photon crystal structure is combined with the Terahertz gain characteristic of graphene, by more
The cascade of individual single-layer graphene layer, add the thickness of gain media；3. prior is due to periodicity " graphene-monocrystalline
Photon band gap characteristic, slower rays enhancement effect and Fabry Perot (F-P) interference effect of silicon layer " 1-D photon crystal structure, drop
Low group velocity of the THz wave in graphene 1-D photon crystal so that energy in distributed feed-back chamber puts repeatedly by vibration
Greatly, the useful effect light path of graphene and THz wave is substantially increased, while modeling effect caused by F-P effects and amplified
Mode competition in journey, further increases the THz wave gain of single-frequency single mode, while improves beam quality, obtains high increase
Benefit, the output of high q-factor THz wave, fundamentally solve the problems, such as amplifier low gain, low reactance-resistance ratio and beam quality；4. device is put
Big working frequency can solve that device is non-tunable to ask by temperature and bias voltage continuous tuning, tuning range 1-2THz
Topic；5. positive and negative electrode is dexterously alternately arranged on each graphene layer by device, unified parallel drive, the equivalent electric of device is reduced
Hold, driven by voltage and pump energy is provided, operating voltage is less than 10V, is easy to as solid state electrical components and other devices and is
System is integrated.
It is an advantage of the invention that：1. the Terahertz amplifier can realize high-gain, high q-factor, single-frequency single mode THz wave
Amplification output, maximum gain exceedes 30dB (i.e. output intensity amplify 1000 times), and for Q values more than 50, it is good to export spectral line coherence,
Line width is less than 30GHz, and output beam quality is good, Gauss single-mode output.2. device can be made by temperature and voltage two ways
Continuously adjustable works in the range of 1-2THz, is the current first amplifier that can be operated in this electromagnetic wave frequency range.3. compare
In the mode of optical pumping, electrical pumping pump mode provides amplified energy, and operating voltage is small, no more than 10V, efficient energy-saving.4. device
Part breadth can flexible design, can both be integrated in small-sized Terahertz solid electronic device and system, millimeter can be designed to again
The large format device of dimensions above is placed in the systems such as free space THz wave spectrum, imaging, communication and radar and used, should
With in extensive range.
Brief description of the drawings
Fig. 1 (a) is the schematic three dimensional views of graphene photonic crystal Terahertz amplifier；
Fig. 1 (b) is the side view of graphene photonic crystal Terahertz amplifier；
Fig. 2 (a) is the graphene Terahertz spectral line that electrical conductivity changes with bias voltage at a temperature of 4K in device；
Fig. 2 (b) is the graphene Terahertz spectral line that refractive index changes with bias voltage at a temperature of 4K in device；
Fig. 3 (a) is the Terahertz spectral line that graphene electrical conductivity under 2V bias voltages varies with temperature in device；
Fig. 3 (b) is the Terahertz spectral line that graphene refractive index under 2V bias voltages varies with temperature in device；
Fig. 4 (a) is Terahertz intensity transmission spectral line of the device at 10K temperature and different bias voltages；
Fig. 4 (b) is Terahertz intensity transmission spectral line of the device under 1.75V bias voltages and different temperatures；
In figure：Graphene 1, monocrystalline silicon 2, positive electrode 3, negative electrode 4, incident THz wave 5.
Embodiment
The course of work number of cycles of the present invention is 25 layers of graphene photonic crystal Terahertz amplifier embodiment explanation：
The structure of device as shown in figure 1,20 μ m-thicks, 100 Ω cm resistivity monocrystalline silicon layer on grow undoped list
Layer graphene, the annular copper band 20 μm wide, 100nm is thick is obtained as electricity by the use of photoetching, evaporation and stripping technology on graphene
Pole, this is the structure of a cycle.It is bonded monocrystalline silicon, growth graphene, copper-plating electrode upwards again, so repeatedly, obtains 25
The graphene 1-D photon crystal structure in cycle.Be alternately arranged positive electrode and negative electrode on each layer graphene, and by it is each just,
Negative electrode is together in parallel respectively, can be biased.Size of devices is 3mm × 3mm × 0.5mm.
The basic functional principle of the device is as follows：The THz wave gain media of the amplifier is single-layer graphene, such as Fig. 2
(a) it is 1-28K in temperature, polarization voltage is 1-11V, the electricity of single-layer graphene in 1-2THz frequency ranges and shown in 3 (a)
Conductance is negative value, and this feature shows that now graphene has gain to the THz wave of this frequency range, can be used as amplifier
Gain media, and electrical conductivity negative value is bigger, the gain coefficient of graphene is bigger.Fig. 2 (a) and 3 (a) show that temperature and bias are big
The small electrical conductivity size that can adjust graphene.Meanwhile Fig. 2 (b) and 3 (b) also show temperature and bias can also adjust stone
The refractive index of black alkene.Although gain coefficient is very big, because graphene is thick only less than 1nm, so single graphene is difficult to obtain
Obtain high gain.And graphene 1-D photon crystal structure as shown in Figure 1 in the present invention, by the cascade of multiple graphenes,
On the one hand the thickness of gain media is added, the single graphene thickness very thin as individual layer atom material is solved and is difficult to obtain
The problem of high-gain；On the other hand because the photon band gap of periodically " graphene-monocrystalline silicon layer " 1-D photon crystal structure is special
Property, slower rays enhancement effect and F-P effects, reduce group velocity of the THz wave in graphene 1-D photon crystal so that energy
Amount vibration amplification repeatedly in distributed feed-back chamber, substantially increase the useful effect light path of graphene and THz wave, while F-P
Mode competition in modeling effect and amplification process caused by interference effect, the THz wave for further increasing single-frequency single mode increase
Benefit, while improve beam quality, obtain high-gain, the output of high q-factor THz wave.Spectral line is exported as shown in figure 4, in certain temperature
Only have a bandwidth under bias, in the range of 1-2THz to be exaggerated less than 30GHz single-frequency THz waves.Due to the refraction of graphene
Rate and electrical conductivity can be regulated and controled by temperature and bias, the photon band gap of graphene 1-D photon crystal and the frequency band position of transmission mode
Put generation respective change so that continuous translation occurs from 1.3THz to 1.7THz as shown in Figure 4 for amplification frequency, and that realizes device can
Tuber function.
The method of work of the device is：As shown in figure 1, by the vertical normal incidence graphenic surface of THz wave, device is in 4-
In 30K low temperature ranges, apply 0.5-10V Dc biases between positive and negative electrode, single-frequency height can be obtained in 1-2THz frequency ranges
The amplification output of gain high q-factor THz wave.As shown in Fig. 4 (a), at a temperature of 10K, bias voltage is increased to 2.5V, device from 1V
Part amplification frequency is moved to 1.66THz from 1.29THz, during this gain change from small to big, reach after optimum value and gradually subtract
Small, wherein maxgain value is 30.8dB (1250 times), under 1.75V at 1.49THz frequencies；In fixed bias voltage
Under 1.75V, as operating temperature is from 1K rise 28K, the amplification frequency that works equally also is changed from small to big to high-frequency mobile, gain, reached
It is gradually reduced, maximum gain 31.2dB (multiplication factor is 1320 times), is appeared under 7K again after to optimum value, at 1.45THz, spectrum
The wide 25GHz of tape, Q values 51.It can be seen that the device carries out relevant amplification for single-frequency THz wave, it amplifies working frequency with work
Temperature and bias voltage continuously adjustable, each working frequency can reach maximum output at temperature corresponding to one group and bias
Gain.
Therefore, the Terahertz amplifier can make device continuous in the range of 1-2THz by temperature and voltage two ways
Tunable work, it is the current first amplifier that can be operated in this electromagnetic wave frequency range, it is possible to achieve high-gain, high q-factor, single-frequency
The amplification output of single mode THz wave, maximum gain is more than 30dB, and Q values are more than 50, and output spectral line coherence is good, and line width is less than
30GHz, output beam quality is good, Gauss single-mode output.It provides amplified energy, operating voltage by electrical pumping pump mode
It is small, no more than 10V, efficient energy-saving.Device breadth can flexible design, can both be integrated in small-sized Terahertz solid electronic device and
In system, it can be designed to that the large format device of millimeter dimensions above is placed on free space THz wave spectrum, imaging, led to again
Use, have wide range of applications in the system such as letter and radar.
Claims (5)
1. a kind of graphene photonic crystal Terahertz amplifier, it is characterised in that including graphene (1), monocrystalline silicon layer (2), positive electricity
Pole (3), negative electrode (4), wherein graphene (1) and monocrystalline silicon layer (2) are alternately arranged to form periodicity " graphene-monocrystalline silicon "
1-D photon crystal structure, and positive electrode (3) and negative electrode (4) are alternately arranged on the graphene of periodic arrangement.
2. graphene photonic crystal Terahertz amplifier according to claim 1, it is characterised in that graphene (1) and monocrystalline
Silicon layer (2) is periodically alternately arranged to form 1-D photon crystal structure, and " graphene-monocrystalline silicon layer " cycle number of plies is many in device
In 10.
3. graphene photonic crystal Terahertz amplifier according to claim 1, it is characterised in that every layer of monocrystalline silicon layer (2)
Thickness be 20 μm, resistivity is more than 100 Ω cm, thereon covering graphene (1) be undoped single-layer graphene, thickness is less than
0.5nm, graphene edge surrounding plate the annular copper band 20 μm wide, 100nm is thick as positive and negative electrode, and device center is Terahertz
Ripple clear aperature, no metal electrode stop.
4. graphene photonic crystal Terahertz amplifier according to claim 1, it is characterised in that in periodic arrangement
Positive electrode (3) and negative electrode (4) are alternately arranged on graphene, and each positive and negative electrode is together in parallel respectively.
5. a kind of usage right requires the method for work of the graphene photonic crystal Terahertz amplifier described in any one of 1-4, its
It is characterised by that device works in the case where temperature is 1-28K low temperature environment, is put by applying bias voltage offer between positive and negative electrode
Pump energy needed for big device, bias voltage are less than 10V, the vertical normal incidence graphenic surface of THz wave, amplifier operation frequency
Rate is tunable with bias voltage and environment temperature size in the range of 1-2THz.
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| CN107528547B (en) * | 2017-07-11 | 2021-05-04 | 中国电子科技集团公司第十三研究所 | Graphene radio frequency amplifier monolithic integrated circuit |
| CN110581429B (en) * | 2018-06-09 | 2023-03-31 | 滨州市腾源电子科技有限公司 | Terahertz wave radiation source based on graphene material |
| CN109581781A (en) * | 2019-01-31 | 2019-04-05 | 湖南师范大学 | A kind of Low threshold optical bistable device based on photonic crystal topology state |
| CN110016372A (en) * | 2019-05-10 | 2019-07-16 | 江苏中兴国邦环保科技有限公司 | A kind of environment-friendly type Terahertz activating additive |
| CN110780369B (en) * | 2019-11-05 | 2021-11-30 | 常州工业职业技术学院 | Visible light all-band absorber based on graphene and one-dimensional photonic crystal composite structure |
| CN112731690B (en) * | 2020-12-17 | 2023-03-31 | 南京理工大学 | Terahertz waveband tunable multifunctional beam regulation and control device and tuning method thereof |
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