CN105445965A - Silicon-based full light-controlled high-speed broadband terahertz modulator and preparation method thereof - Google Patents
Silicon-based full light-controlled high-speed broadband terahertz modulator and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 8
- 239000010703 silicon Substances 0.000 title claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052737 gold Inorganic materials 0.000 claims abstract description 14
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 10
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- 239000012535 impurity Substances 0.000 claims abstract description 8
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- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 238000001338 self-assembly Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 43
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000007669 thermal treatment Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
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- 239000012782 phase change material Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
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- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
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- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0156—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using free carrier absorption
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a silicon-based full light-controlled high-speed broadband terahertz modulator and a preparation method thereof. The method comprises the steps that 1, a silicon substrate is cleaned, a double-sided polishing high-resistance Si sheet is selected and cleaned up, and nitrogen is used for blow-drying the Si sheet for use; 2, a deep energy level impurity source is synthesized, and a nano Au or Pt particle single layer film is prepared on the high-resistance Si sheet surface by means of a self-assembly mode; 3, high-temperature diffusion is conducted to prepare a sample, heat treatment is conducted on the Si sheet of which the surface is provided with the nano Au or Pt particle film in inert gas for 10 min to 120 min, Au or Pt remained on the Si surface is removed through a complex solution, polishing and cleaning are conducted, and the deep energy level doped Si sample is prepared. According to the silicon-based full light-controlled high-speed broadband terahertz modulator and the preparation method thereof, nano metal particle deep energy level doping is conducted on a high-resistance silicon material, a recombination center is introduced in the Si substrate, the photon-generated carrier recombination process is accelerated, and therefore the high-speed light-controlled terahertz modulator is obtained.
Description
Technical field
The present invention relates to electromagnetic functional material and device arts, relate to the regulation and control device of THz wave, particularly silica-based complete light-operated high-speed wideband Terahertz modulator of one and preparation method thereof.
Background technology
Terahertz (THz) is the electromagnetic wave spectrum of frequency between 0.1 ~ 10THz (wavelength 3000 ~ 30 μm), enrich because THz ripple has frequency spectrum, be with roomy, transfer rate is high, have advantages such as penetrating non-polar material, be therefore all with a wide range of applications in fields such as radio communication, detection imaging, Object Classification, medical diagnosis, safety inspections.Become the Frontier that countries in the world fall over each other to develop, start the research boom about Terahertz communication, radar, imaging, safe examination system at home and abroad.And in Terahertz application system, except source and sniffer, the THz wave such as Terahertz modulator, switch, wave filter regulation and control device is absolutely necessary building block, it is one of current Terahertz scientific and technical research emphasis.
Due to the singularity of terahertz wave band, existing microwave and light wave regulation and control device cannot be applied to terahertz wave band.Therefore, Terahertz regulation and control device becomes an important research direction, has become one of technology barrier of restriction Terahertz application system.T.Kleine-Ostmann seminar in 2004 proposes and achieves automatically controlled THz wave directly modulation by two-dimensional electron gas (2DEG) absorption to THz wave of heterojunction semiconductor.But because 2DEG thickness is only nanoscale, to the THz wave modulation degree of depth less (~ 3%).Recently, there is the vanadium dioxide material (VO of insulation figure-metallic state high-speed phase change characteristic
2) cause concern in the application of Terahertz frequency range.Based on VO
2terahertz modulator there is larger depth of modulation and modulation band-width, but the temperature dependent properties shown makes modulation rate comparatively slow, and its time constant is that a few tens of milliseconds is even longer.
Meta Materials (Metamaterials) is a kind of periodic structure material of man-made structures, can produce strong resonance to THz wave, thus can regulate and control THz ripple.To be combined with schottky junction, phase-change material, Graphene, liquid crystal and High Electron Mobility Transistor (HEMT) by artificial Meta Materials and develop multiple THz adjusting function device.Wherein integrated by HEMT-structure and Meta Materials of D.Shrekenhamer seminar in 2011, achieve up to 10MHz, depth of modulation reaches the Terahertz modulator of 33%.But the modulator based on Meta Materials exists modulation band width (usually at some or several frequency), the shortcomings such as loss of signal is larger, and the integrated technique of HEMT and superstructure is complicated, cost intensive.Recently, the light-operated THz devices based on high resistant Si causes concern.2012, the laser tuning Graphene/High Resistivity Si composite structure that utilizes of P.Weis seminar report achieved regulation and control to THz ripple.2013, Capital Normal University professor Zhang Yan utilized laser action intrinsic Si material, illustrated a kind of space Terahertz modulator (STM), achieved the application of high-resolution terahertz imaging.
Light-operated semiconductor Si modulator has large modulation amplitude and wide-band applications characteristic usually, and mutually compatible with existing semiconductor technology, is to realize one of Terahertz regulation and control device important way.But be limited by the carrier lifetime that intrinsic Si (or high resistant Si) reaches tens of microseconds, the modulation rate of device can only reach kHz magnitude.Heavy doping Si sheet has relatively little carrier lifetime, but the charge carrier of the high concentration of this material own has strong absorption to THz wave, the loss of terahertz signal is very large, and power utilization is low, simultaneously very little to the modulated amplitude of THz wave under high-rate laser effect.Therefore, under the prerequisite of not losing Terahertz transmission amplitude, improve modulation rate and become one of gordian technique of light-operated Terahertz spatial modulator research.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of silica-based complete light-operated high-speed wideband Terahertz modulator and preparation method thereof is provided, by carrying out the doping of nano-metal particle deep level to High Resistivity Si material, to introduce recombination center in Si matrix, accelerate photo-generated carrier recombination process, thus realize the light-operated Terahertz modulation device of a kind of high speed.
The object of the invention is to be achieved through the following technical solutions: a kind of preparation method of silica-based complete light-operated high-speed wideband Terahertz modulator, comprises the following steps:
S1: cleaning silicon base: select the high resistant Si sheet of twin polishing and clean up, drying up with nitrogen for subsequent use;
S2: synthesis deep-level impurity source: by self assembly mode at high resistant Si sheet surface preparation size nanometer Au or Pt granular cell layer film;
S3: High temperature diffusion prepares sample: surface is had the Si sheet of nanometer Au or Pt particle film thermal treatment 10min ~ 120min in inert gas, Au or Pt of Si remained on surface is got rid of with complex solution, and polishing, cleaning, prepare deep level doping Si sample.
Described nanometer Au or Pt grain size are within the scope of 10-50nm.
Described inert gas is argon gas or nitrogen.
Described heat-treatment temperature range is 850 DEG C ~ 1100 DEG C.
Described complex solution is by 3 grams of I
2, 10 grams of KI and 50 ml deionized water are made into.
The silica-based complete light-operated high-speed wideband Terahertz modulator that preparation method obtains.
The present invention proposes a kind of silica-based full light high-speed wideband Terahertz modulator, by carrying out the doping of nano-metal particle deep level to High Resistivity Si material, to introduce recombination center in Si matrix, accelerate photo-generated carrier recombination process, thus realize the light-operated Terahertz modulation device of a kind of high speed.Its ultimate principle adopts nano particle diffuse source to adulterate to High Resistivity Si, recombination center is introduced in Si body, the light relaxation phenomena produced after suppressing laser action Si, improve the electron-hole pair recombination rate in Si body, significantly reduce minority carrier lifetime from tens original μ about s to 100ns, improve Terahertz modulation rate and reach 2 orders of magnitude.It is wide that this device has working band, polarizes insensitive, with the characteristic such as semiconductor technology is compatible, can easily modulate with the full light Terahertz of existing optical device mutually integrated structure integrated form.All having important using value in fields such as Terahertz radio communication, imaging and detections, is also the important foundation realizing other Si base Terahertz adjusting function devices.
The feature of this device is: (1) device adopts the Si sill with bulk or form of film, and the carrier concentration of material is less than 10
15cm
-3, this comprises Si film (SOI) on Si monocrystal material, insulator, Si film (SOS) that sapphire is grown up etc.; (2) the Si material in device has carried out deep-level impurity doping treatment, adopt the metallic particles of micrometer/nanometer yardstick as diffuse source, by the adjustment of micrometer/nanometer particle shape, size, realize to impurity concentration in Si material, position, distribution character controllable doped.Deep-level impurity comprises Au, Pt, Ag, Cu etc.; (3) device by above-mentioned deep level adulterate Si material and tuneable semiconductor laser integrated, the optical maser wavelength of semiconductor laser must meet the broadband, forbidden band that its photon energy is greater than Si, usual <950nm, laser power should reach more than 50mW; (4) modulated laser that this device is exported by laser instrument driven, wherein laser instrument can export the output of modulated laser signal source 7 TTL pulse signal control semiconductor laser 8 export modulating lasering beam, produce the modulated laser 9 of strong and weak change, the peak strength of modulated laser 9 will reach more than 50mW to ensure to obtain larger depth of modulation, and the facula area of modulated laser should cover the area of the terahertz wave beam needing modulation completely.(5) this device has following performance characteristics: High Speed Modulation (reaching 10MHz), ultra broadband work (0.1-10THz), and depth of modulation large (reaching 21%), polarizes insensitive, and full optics controls, working and room temperature etc.This device has significant application value in the application such as THz wave communication, imaging.
The invention provides a kind of silica-based complete light-operated high-speed wideband Terahertz modulator and preparation method thereof, its principle of work is as follows: (1) is not having under laser action or more weak laser action, and modulator is to the THz wave highly transparent of 0.1-10THz.This is because nano-metal particle is to the reflection of the THz wave beam of incidence with absorb less, the transmission amplitude of not loss THz ripple, the carrier concentration in the Intrinsical simultaneously selected or low-doped semiconductor Si material is very low, also very little to the absorption of THz wave; (2) when the laser action of certain wavelength is in the silicon materials that deep level is adulterated, incident laser photon absorb by semiconductor material and produce a large amount of photo-generated carriers.Under the driving of carrier density gradient, the charge carrier (electronics and hole) in semiconductor diffuses to form uniform conductance layer fast towards periphery, and produce reflection and absorption to the THz wave of incidence, THz wave transmission significantly weakens.After additional laser removes, enable the carrier concentration in Si body return to original state faster, THz wave intensity in transmission returns to level when not having laser action.(3) operationally, semiconductor laser exports on the Si material that the laser action through ovennodulation adulterates in deep level, when modulated laser is in "open" state, the transmission amplitude of THz wave is lower, when laser is in "off" state, the transmission of THz wave is comparatively strong, therefore achieves the intensity modulated of light-operated THz wave; (4) how brief explanation has high speed, broadband, large depth of modulation and the insensitive characteristic that polarizes.
The silica-based complete light-operated high-speed wideband Terahertz modulator of one provided by the invention, has following performance advantage relative to existing terahertz wave modulator:
1, the silica-based complete light-operated high-speed wideband Terahertz modulator of one provided by the invention, has wide-band modulation characteristic, can carry out intensity modulated to the THz wave of 0.3 ~ 1THz;
2, the silica-based complete light-operated high-speed wideband Terahertz modulator of one provided by the invention, owing to have employed full optical modulation techniques, breaches the restriction of electronic control type modulator by RC constant, has the modulation rate up to more than 10MHz;
3, the silica-based complete light-operated high-speed wideband Terahertz modulator of one provided by the invention, adulterate owing to adopting the deep-level impurity of nano-metal particle film, while not losing terahertz wave beam transmission amplitude, improve the electron-hole pair recombination rate in Si body, improve Terahertz modulation rate and reach 2 orders of magnitude, maximum can realize 21% depth of modulation;
4. the silica-based complete light-operated high-speed wideband Terahertz modulator of one provided by the invention, can work under the laser action of conventional optical communications wavelength 850nm, 915nm, can be mutually integrated with existing optic communication device, is thus easy to realize.
5. the silica-based complete light-operated high-speed wideband Terahertz modulator of one provided by the invention, is a kind of spatial mode Terahertz modulator of independent utility, can with the Terahertz wave source of any wide-band with the use of, also have that structure is simple, polarize insensitive feature simultaneously.
Accompanying drawing explanation
Fig. 1 is the stereoscan photograph one of the nanometer Au membrana granulosa that the present invention is obtained on high resistant Si substrate by self-assembling technique;
Fig. 2 is the stereoscan photograph two of the nanometer Au membrana granulosa that the present invention is obtained on high resistant Si substrate by self-assembling technique;
Fig. 3 is minority carrier lifetime statistical graph and the matched curve of Si sheet of the present invention;
Fig. 4 is minority carrier lifetime statistical graph and the matched curve of nanometer Au of the present invention membrana granulosa/Si sample;
Fig. 5 is Terahertz preparation test schematic diagram of the present invention; In figure, the solid-state continuous source of 1-THz; The unmodulated THz wave beam of 2-; 3-semiconductor Si material; 4-nanometer Au membrana granulosa; The THz wave beam of 5-modulation; 6-THz detector; 7-signal source; 8-semiconductor laser; The laser beam of 9-modulation; 10-digital oscilloscope; 11-coaxial connecting line;
Fig. 6 is modulator of the present invention transmission amplitude curve to Terahertz under different capacity laser action;
Fig. 7 is modulator of the present invention depth of modulation curve to Terahertz under different capacity laser action;
Fig. 8 is the THz wave modulation signal detected under the effect of different frequency modulated laser in the specific embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail, but protection scope of the present invention is not limited to the following stated.
The invention provides a kind of silica-based complete light-operated high-speed wideband Terahertz modulator and preparation method thereof, the core component of this modulator is the high resistant Si material carrying out deep level doping with form of nanoparticles, this material is mutually integrated with modulated laser, form a kind of complete light-operated THz wave amplitude modulator, its structure as depicted in figs. 1 and 2.
Technical solution of the present invention is: a kind of silica-based complete light-operated high-speed wideband Terahertz modulator, and realize the quick regulation and control to THz wave, its preparation method is as follows:
Step 1, cleaning silicon base: select the high resistant Si sheet of twin polishing to clean up, dry up with nitrogen for subsequent use;
Step 2, synthesis deep-level impurity source: by self assembly mode at Si surface preparation size nanometer Au (or Pt) granular cell layer film, nano particle size is within the scope of 10-50nm.Various self-assembling method can be adopted.
Step 3, High temperature diffusion prepare sample: surface is had the Si sheet of nanometer Au (or Pt) particle film thermal treatment 10min ~ 120min at 850 DEG C ~ 1100 DEG C in inert atmosphere (as argon gas, nitrogen), use I
2(3g) complex solution that+KI (10g)+deionized water (50ml) is made into gets rid of the Au (or Pt) of Si remained on surface, and polishing, cleaning, prepare deep level doping Si sample.
The preparation of a kind of full optical broadband Terahertz modulator based on deep level doped silicon that the present embodiment provides and implementation process as follows:
Step 1, first select twin polishing, area is 10 × 10mm, thickness is 350 μm high resistant Si sheet, its resistance >2500 Ω .cm
-1.The acid solution that Si sheet puts into self-configuring is soaked 20min, to remove the pollutants such as the metallic ion on surface; Si sheet 10min is soaked, to remove the silicon oxide layer of its Surface Creation with the HF solution again with 25% after deionized water rinsing; Clean with deionized water rinsing again; Then use acetone ultrasonic cleaning 5min, remove the organic contaminant on its surface, then use alcohol ultrasonic cleaning 5min, finally use washed with de-ionized water three times, dry up with nitrogen for subsequent use.
Step 2, Si sheet for subsequent use for step 1 is divided into two parts, be labeled as substrate A and substrate B respectively, substrate B does not take any treatment measures.For substrate A, self-assembling technique is then utilized to prepare ultra-thin nanometer Au membrana granulosa in its surface, this method adopts sodium citrate direct-reduction gold chloride and obtains: first, 125mlHAuCl4 (1 molecule mole is added in 250ml round-bottomed flask, i.e. 1mM), be heated to boiling, add 12.5ml (38.8mM) citric acid solution fast, continue heating 10min, remove heating jacket, continue to stir 15min, be cooled to room temperature, obtain the nano-scale gold particle sublayer that particle diameter is approximately 10nm, particle layer is transferred on Si sheet A, naturally dry and obtain nanometer Au membrana granulosa.
Step 3, substrate A step 2 prepared put into the high-temperature annealing furnace of 900 DEG C, and pass into argon gas in stove, are taken out by sample at 900 DEG C after thermal treatment 30min.Finally the substrate A after having spread is put into I
2(3g) complex solution that+KI (10g)+deionized water (50ml) is made into, immersion 30min gets rid of the Au film that substrate surface may remain; To dry up with nitrogen by washed with de-ionized water again.The sample A obtained is the sample based on the doping of nanometer Au membrana granulosa, is called Au doping Si sample.Substrate B is then the naked Si sheet of undressed high resistant.
Dependence test is carried out below to being prepared into sample:
(1) its surface structure rear with diffusion before the Au doping Si sample prepared the present embodiment is spread by sem observation, its result as shown in Figure 1, by thermal treatment, it is inner that most Au has diffused into Si, but at remained on surface sub-fraction Au.This sub-fraction remained on surface Au film is cleaned by complex compound and polishing just can be removed later completely.
(2) minority carrier lifetime test is carried out to Au doping Si sample prepared by the present embodiment, its result as shown in Figure 3 and Figure 4, testing apparatus adopts the WT-2000 semiconducting behavior test macro of Semilab company, utilizes the minority carrier lifetime that microwave photoconductive decay method (μ-PCD method) measures Si sheet, Au adulterates Si sample.The pumping laser hot spot of this system is 1mm
2, therefore can only obtain sample surfaces at every turn and be about 1mm
2the minority carrier lifetime value in region, thus the minority carrier lifetime distribution of sample utilizes 1mm
2colour bulk composition (as shown in the illustration in Fig. 3 and Fig. 4), color is more tending towards mazarine, and to represent minority carrier lifetime longer, on the contrary, is tending towards peony and means that minority carrier lifetime is shorter.Fig. 3 is the minority carrier lifetime Data-Statistics figure of high resistant Si, and in Gaussian distribution, and integrated distribution is between 10.2 μ s ~ 11 μ s.Figure 4 shows that the minority carrier lifetime Data-Statistics figure of Au film/Si sample, mainly concentrate near 0.11 μ s, and the COLOR COMPOSITION THROUGH DISTRIBUTION on whole surface is more even.By mixing Au, the minority carrier lifetime of Si is significantly reduced to about 100ns from 10 μ s, reduces about 2 orders of magnitude.
(3) THz wave preparation test is carried out to Au doping Si sample prepared by the present embodiment: the Si sample that semiconductor laser 8 and Au adulterated is fixing on optical table according to the order shown in Fig. 5, namely constitutes the complete light-operated terahertz wave modulator that this patent provides.In the present embodiment, select the directly modulated laser OS-PL-M-915-M105 (FC) of Beijing Kang Guan century Electro-optical Technology, INC. (US) 62 Martin Road, Concord, Massachusetts 017, optical maser wavelength 915nm, output power 10-1100mW is adjustable, the multimode optical fiber adopting core diameter to be greater than 0.4mm realizes coupling, and optical coupling efficiency reaches more than 85%.This directly modulated laser is transmitted into free space after coupling fiber collimation.In the present embodiment, modulator is positioned on the metal sample frame of an aperture 6mm.Terahertz wave beam 2 impinges perpendicularly on modulator, modulating lasering beam 9 then with terahertz wave beam 2 direction of propagation for standard shaft about 30 ° of coupled light are on modulator.Continuous THz source 1 and high speed Terahertz wave detector 6 is utilized to build a THz wave dynamic modulation characteristic test system based on free space transmission.In the present embodiment, THz source 1 selects the solid-state THz source of VDI company, and frequency of operation is at 0.34THz, and peak power output is about 5mW; Zero of VDI company model WR2.8ZBD inclined wave detector selected by THz wave wave detector 6, frequency of operation 260 ~ 400GHz, noise equivalent power NEP=2.7pW/ √ Hz.
(a) based on the THz wave transmission measuring syste shown in Fig. 5, the THz wave transmission amplitude of modulator provided by the invention and depth of modulation test under having carried out modulated laser load condition.Export TTL pulse current to semiconductor laser 8 by signal source 7, drive semiconductor laser 8 to export the modulating lasering beam 9 of change at a high speed.Modulating lasering beam 9 acts on the dynamic modulation realized on the modulator incident THz wave 2.Obtain the magnitude of voltage of THz wave finally by terahertz detector 6 device, and directly demonstrate dynamic voltage signal by digital oscilloscope 10.Fig. 6 is the THz ripple transmission changes in amplitude curve of Si, Au provided by the invention doping Si sample under different capacity laser action.Along with laser power increases, THz ripple transmission amplitude obviously declines.Figure 7 shows that the THz wave depth of modulation curve of the modulator provided by the invention under different laser power.When laser power is 1W, the depth of modulation of depth of modulation about 30%, the Au film/Si modulator of Si modulator is 21%.After Au doping, the photo-generated carrier birthday noodle of Si shorten, and recombination process is accelerated, and make photo-generated carrier layer thinning, under the effect of same laser power, the depth of modulation of Au film/Si modulator is less than naked Si sheet modulator.
B (), based on the THz wave transmission measuring syste shown in Fig. 5, has carried out the THz wave modulating speed test of Au dot matrix/Si modulator provided by the invention.Fig. 8 is the Terahertz dynamic waveform of the particle doped Si sample of nanometer Au provided by the invention under the modulated laser effect of 500kHz, 1MHz, 3MHz and 5MHz different modulating frequency.Can find out that doping Si Terahertz modulator provided by the present invention is at 1MHz, 3MHz all has good response, and " peak-peak " value of THz wave modulation signal does not significantly decay, illustrate that Au provided by the invention dot matrix/Si Terahertz modulator at least has the modulation rate of 3MHz.Au adulterates Si modulator compared to naked Si sheet modulator, while raising THz wave modulation rate, does not also have the transmission amplitude of significantly sacrificing THz ripple.Due to the restriction of Stimulated Light device performance, can not be used for accurately estimating the velocity limit of modulator.We obtain modulation waveform under lower modulating frequency, then estimate the most high modulation rate of modulator by rising edge and negative edge time.To adulterate the Si modulator modulation waveform at 500kHz by measuring Au provided by the invention, obtain its rising edge and be about 100ns, negative edge is about 130ns, calculates the accessible most high modulation rate of this modulator and is about 4.3MHz.In addition, because the minority carrier lifetime of Au dot matrix/Si sample is about 0.1us, estimate that its maximum modulating frequency can reach 10MHz thus.The hot spot exported due to the laser instrument of test is about 2mm
2, light beam all covers the region that THz wave beam passes at this modulator, causes THz wave beam limited by the region regulated and controled, and the numerical value that modulation amplitude and modulation rate ratio are calculated by carrier lifetime is little.If improve experiment condition and test condition further, be expected to the modulation rate improving nanometer Au film provided by the invention doping Si modulator further.
The above is only the preferred embodiment of the present invention, be to be understood that the present invention is not limited to the form disclosed by this paper, should not regard the eliminating to other embodiments as, and can be used for other combinations various, amendment and environment, and can in contemplated scope described herein, changed by the technology of above-mentioned instruction or association area or knowledge.And the change that those skilled in the art carry out and change do not depart from the spirit and scope of the present invention, then all should in the protection domain of claims of the present invention.
Claims (6)
1. a preparation method for silica-based complete light-operated high-speed wideband Terahertz modulator, is characterized in that, comprise the following steps:
S1: cleaning silicon base: select the high resistant Si sheet of twin polishing and clean up, drying up with nitrogen for subsequent use;
S2: synthesis deep-level impurity source: by self assembly mode at high resistant Si sheet surface preparation size nanometer Au or Pt granular cell layer film;
S3: High temperature diffusion prepares sample: surface is had the Si sheet of nanometer Au or Pt particle film thermal treatment 10min ~ 120min in inert gas, Au or Pt of Si remained on surface is got rid of with complex solution, and polishing, cleaning, prepare deep level doping Si sample.
2. the preparation method of a kind of silica-based complete light-operated high-speed wideband Terahertz modulator according to claim 1, is characterized in that: described nanometer Au or Pt grain size are within the scope of 10-50nm.
3. the preparation method of a kind of silica-based complete light-operated high-speed wideband Terahertz modulator according to claim 1, is characterized in that: described inert gas is argon gas or nitrogen.
4. the preparation method of a kind of silica-based complete light-operated high-speed wideband Terahertz modulator according to claim 1, is characterized in that: described heat-treatment temperature range is 850 DEG C ~ 1100 DEG C.
5. the preparation method of a kind of silica-based complete light-operated high-speed wideband Terahertz modulator according to claim 1, is characterized in that: described complex solution is by 3 grams of I
2, 10 grams of KI and 50 ml deionized water are made into.
6. the silica-based complete light-operated high-speed wideband Terahertz modulator that the preparation method according to any one of claim 1-5 obtains.
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| CN108254944A (en) * | 2018-01-19 | 2018-07-06 | 电子科技大学 | Light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate and preparation method thereof |
| CN109193175A (en) * | 2018-09-11 | 2019-01-11 | 南京邮电大学 | A kind of broadband Meta Materials Terahertz wave absorbing device based on light-operated switch |
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| CN111983822A (en) * | 2019-05-22 | 2020-11-24 | 合肥工业大学 | Preparation method and application of monodisperse oxide nanoparticles capable of improving performance of terahertz device |
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