CN110531540A - MoTe2With the full light Terahertz modulator of Si composite construction and preparation method thereof - Google Patents
MoTe2With the full light Terahertz modulator of Si composite construction and preparation method thereof Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 27
- 238000010276 construction Methods 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 229910016021 MoTe2 Inorganic materials 0.000 claims abstract description 55
- 239000003708 ampul Substances 0.000 claims abstract description 18
- 239000010453 quartz Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000006185 dispersion Substances 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 12
- 239000006228 supernatant Substances 0.000 claims abstract description 12
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 238000004528 spin coating Methods 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 238000002604 ultrasonography Methods 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 5
- 238000010792 warming Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 230000036760 body temperature Effects 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 238000005498 polishing Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000005303 weighing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 7
- 238000005086 pumping Methods 0.000 description 6
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000010583 slow cooling Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052961 molybdenite Inorganic materials 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
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- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- -1 transition metal chalcogen Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
A kind of MoTe2With the full light Terahertz modulator of Si composite construction and preparation method thereof, which includes the silicon wafer of surface polishing and the MoTe of silicon chip surface covering2Layer；Preparation method includes the following steps: (1) weighing Te and Mo and be fitted into quartz ampoule simultaneously tube sealing, quartz ampoule is put into heating furnace by (2), Mo and the abundant combination reaction of Te；(3) end of reaction is taken out quartz ampoule and is centrifuged, and obtains MoTe2Body block monocrystalline；(4) by MoTe2Body block monocrystalline, which is put into the centrifuge tube for fill NMP, carries out ultrasound, obtains MoTe2Dispersion liquid；(5) dispersion liquid of acquisition is centrifuged, takes supernatant；(6) by MoTe2The silicon chip surface of supernatant spin coating after cleaning, drying, makes nmp solution volatilize completely, obtains MoTe2With the Terahertz modulator of Si composite construction.Manufacture craft of the present invention is simple, can uniform large-area preparation, the modulators modulate of preparation is simply easily realized, under lower pump laser power, can be realized wide-band modulation, and modulation modulation depth is big, high sensitivity.
Description
Technical field
The present invention relates to one kind to be based on MoTe2Full light Terahertz modulator of/Si composite construction and preparation method thereof, belongs to
Two-dimensional material and photoelectric functional device applied technical field.
Background technique
Terahertz (THz) is the electromagnetic wave band between infrared between microwave, and for frequency range in 0.1-10THz, institute is right
The wave-length coverage answered is 3-0.03mm.In recent years, with the development of Terahertz Technology, the generation of THz wave and asking for detection
Topic, which has been obtained, preferably to be solved.But due to lacking quickly and effectively Terahertz function element, how to control to convenient and efficient
THz wave processed is still a urgent problem to be solved.In a Terahertz system, Terahertz modulator has very important
Effect, especially Terahertz short-distance wireless communication, it is ultrafast connection and terahertz imaging system in.Because it can be controlled
Amplitude, phase, polarization state, spatial direction of THz wave processed etc..Therefore, have to the research of terahertz wave modulator non-
Often important meaning, can push the functionization of Terahertz Technology.And current Terahertz modulator, in modulation depth, modulation
There are still deficiencies for speed, bandwidth etc..
According to the physical quantity of modulation, modulator can be divided into amplitude modulaor, phase-modulator and waveform modulator etc.
Deng.Stress modulation, electricity modulation, optical modulation, temperature modulation, acousto-optic modulation and magneto-optic tune can be divided into according to modulation means
System etc..But every kind of modulation means all have respective advantage and disadvantage, such as temperature modulation has slower modulating speed, stress tune
System needs accurate measuring equipment, and electricity and optical modulation all have relatively large insertion loss.Full light Terahertz tune
Technology processed generates photo-generated carrier using visible or near-infrared light source direct irradiation device surface, by the intensity for controlling light source
Highly sensitive Terahertz modulation can be achieved.
Traditional full light Terahertz modulator uses single semiconductor (such as Si, Ge etc.), since lower carrier is dense
Degree, modulation depth are extremely limited.Two-dimensional material is considered as due to its unique physical characteristic such as optically and electrically
The next-generation electronic material of most potential substitution silicon materials, Terahertz modulation device may be implemented in two-dimensional material and semiconductors coupling
System's energy greatly improves.Biggish modulation depth and modulation bandwidth may be implemented in graphene and semiconductor Si or Ge composite construction
(Sci.Rep.2014,4,7409；ACS Nano 2012,6,9118), but the energy of required pump light is higher, is unfavorable for
Energy conservation and integrated device heat dissipation.Two-dimensional layer transient metal sulfide (MoS2, MoTe2) it is that one kind has excellent physical chemically
The two-dimensional material of energy, is the hot spot of current materialogy and photoelectronics research.MoS2It may be implemented with semiconductor Si composite construction
Higher modulation depth and modulation bandwidth, but the energy of the pump light needed for it is equally higher.(Nanoscale 2016,8,
4713；Sci.Rep.2016,6,22899.).
In short, existing Terahertz modulator be difficult to meet simultaneously it is excellent in terms of modulation depth, modulation bandwidth, sensitivity
Performance, some device preparation technologies are complicated, device performance stability high pump energy Laser Modulation that is not high, and needing,
Not only increase energy consumption for practical application, but also is unfavorable for device heat dissipation.
Two telluride molybdenum (MoTe2) a kind of transition metal chalcogen two-dimensional layer semiconductor material is used as to have the advantage that it
Homojunction Carrier Injection Efficiency is high, is 10~50 times of Si, migration rate is fast wherein for electronics；Moreover, MoTe2With with
Si almost the same band structure and band gap (1.0~1.1eV), therefore, MoTe2It is heterogeneous that II class Van der Waals is compounded to form with Si
Knot, interface potential barrier is smaller, is conducive to the transmission of carrier, to improve the sensitivity of device.
Summary of the invention
The present invention is for existing Terahertz modulator in the aspect of performance such as modulation depth, modulation bandwidth, sensitivity and device
Deficiency existing in terms of part preparation process, provide a kind of high sensitivity broadband based on MoTe2With the full light terahertz of Si composite construction
Hereby modulator, while the preparation method of the modulator being provided.
It is of the invention based on MoTe2With the full light Terahertz modulator of Si composite construction, including the Si substrate (silicon of surface polishing
Piece) and Si substrate surface covering MoTe2Layer.
MoTe2Layer is located at the upper surface of semiconductor Si substrate.MoTe2Layer is by 2H phase MoTe2The evenly dispersed stacking shape of nanometer sheet
At so that anisotropy is not present in the modulator, there is no need to consider influence of the direction to its modulating performance.
Above-mentioned MoTe2With the preparation method of the full light Terahertz modulator of Si composite construction, comprising the following steps:
(1) Te and Mo are weighed according to the ratio of molar ratio Te:Mo=10~15:1, is fitted into quartz ampoule and mixes, vacuumized
After be sintered tube sealing；
The vacuum degree vacuumized is 3~5 × 10-4Pa。
(2) quartz ampoule is put into heating furnace, stage heating, so that the abundant combination reaction of Mo and Te；
The interim heating, is warming up to 400~600 DEG C, constant temperature 20~25 hours for 5~10 hours first；10 then~
It is warming up within 15 hours 850~880 DEG C, constant temperature 20~25 hours.
(3) after completion of the reaction, it when furnace body temperature is down to 500~550 DEG C, takes out quartz ampoule and is centrifuged, obtain growth
MoTe2Monocrystalline is separated with extra Te fluxing agent, obtains MoTe2Body block monocrystalline；
The furnace body is cooled down with 0.2~2 DEG C/h of rate.
(4) by MoTe2Body block monocrystalline, which is put into the centrifuge tube for filling NMP (N-Methyl pyrrolidone), carries out ultrasound, obtains
MoTe2Dispersion liquid；
(5) dispersion liquid of acquisition is centrifuged, takes supernatant；
The revolving speed of the centrifugation is 2000~5000 revs/min, and the time is 10~20 minutes.
(6) by MoTe2The silicon chip surface of supernatant spin coating after cleaning, drying, makes nmp solution volatilize completely, obtains
MoTe2With the Terahertz modulator of Si composite construction.
The drying temperature is 80~100 DEG C.
To the MoTe of above method preparation2Performance indexes test is carried out with the Terahertz modulator of Si composite construction,
Using terahertz time-domain spectroscopy (THz-TDS) system, laser repetition is 1GHz, and pulsewidth < 30fs utilizes the GaAs of low-temperature epitaxy
(LT-GaAs) as terahertz generation crystal, spectral region is 0.05-3THz.The light of 800nm and 1064nm is respectively adopted
Source is as modulated light source.Under the 1064nm pumping laser of 50mW, modulation depth is up to 94%, and modulation depth is with pump power
Increase and increase, maximum percentage modulation 99.9%, shows MoTe of the invention2The full light Terahertz modulator of/Si is lower
High modulation sensitivity and modulation depth can be realized under pump laser power, reach the highest level reported at present.In 0.3-
Within the scope of 2THz, pumping laser energy rate all has modulation depth when being more than 100mW, shows MoTe of the invention2The full light terahertz of/Si
Hereby modulator has wide-band modulation characteristic.
The present invention grown the MoTe of high quality using case of flux methods2Body block monocrystalline, and obtained by ultrasonic stripping method
MoTe2Nanometer sheet prepares MoTe using spin-coating method later2/ Si composite construction is as full light Terahertz modulator.
MoTe prepared by the present invention2/ Si composite construction Terahertz modulator manufacture craft is simple, being capable of uniform large-area system
Standby, device modulation is simply easily realized, Terahertz modulator excellent combination property.
Detailed description of the invention
Fig. 1 is MoTe prepared by the present invention2The structural schematic diagram of the full light Terahertz modulator of/Si；Wherein: 1. silicon wafers,
2.MoTe2Layer, 3. pumping lasers, 4. terahertz emissions.
Fig. 2 is MoTe prepared by the present invention2The full light Terahertz modulator of/Si；Wherein (a) and (b) is respectively surface and side
The SEM micrograph in face,
Fig. 3 is MoTe prepared by the present invention2Modulation of the full light Terahertz modulator of/Si under the pumping of 800nm continuous laser
Depth is with laser power variation curve.
Fig. 4 is MoTe prepared by the present invention2Modulation of the full light Terahertz modulator of/Si under the pumping of 1064nm continuous laser
Depth is with laser power variation curve.
Fig. 5 is MoTe prepared by the present invention2The full light Terahertz modulator of/Si is pumped in the 1064nm continuous laser of different capacity
0.3-2THz coverage modulation depth curve under Pu.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
Any feature disclosed in this specification (including any accessory claim, abstract and attached drawing), except non-specifically chatting
It states, can be replaced by other alternative features that are equivalent or have similar purpose.Related description of the present invention:
1. the composition of Terahertz amplitude modulaor:
As shown in Figure 1, the modulator includes that the silicon wafer 1 (semiconductor Si substrate) of surface polishing and silicon chip surface cover
MoTe2Layer 2.MoTe2Layer 2 is that the 2H phase nanometer sheet for the uniform disorder distribution removed by liquid phase is freely stacked and formed, so that this
Anisotropy is not present in modulator, and there is no need to consider influence of the direction to its modulating performance.
2. the working principle of Terahertz amplitude modulaor:
Due to MoTe2With the fermi level difference of Si so that the two contact after band curvature occurs, thus internal electron will
MoTe is flowed to from Si2, and hole is then from MoTe2Flow to Si.When the fermi level of the two reaches balance, due to the stream of carrier
It is dynamic, a built in field is formd in inside configuration, direction of an electric field is directed toward MoTe by Si2.As shown in Figure 1, when device is pumped
When the irradiation of Pu laser 3, in MoTe2Layer generates a large amount of photo-generated carrier with silicon wafer interface.Photo-generated carrier is in built-in electricity
It is moved under the action of, light induced electron is moved into Si, and photohole is then to MoTe2Middle movement.To in MoTe2Assemble in layer
A large amount of hole, and a large amount of electronics is had accumulated in Si.Due to the accumulation of carrier, so that the conductivity of device increases,
The absorption to terahertz emission 4 is increased, to achieve the purpose that Terahertz amplitude modulation.By the function for adjusting pumping laser 3
Rate, to change the concentration of photo-generated carrier, realization Terahertz that can be flexible and convenient regulates and controls.
MoTe of the present invention is given below2The specific preparation embodiment of the full light Terahertz modulator of/Si.
Embodiment 1
(1) Te and Mo are weighed according to the ratio of molar ratio Te:Mo=10:1, then raw material is fitted into quartz ampoule, taken out true
Sky is to 3~5 × 10-4Tube sealing is sintered after Pa；
(2) quartz ampoule is put into resistance-heated furnace, using interim temperature program, is warming up to 400 DEG C within 5 hours first,
Constant temperature 25 hours；Then 880 DEG C are warming up within 10 hours, constant temperature 20 hours, makes the abundant combination reaction of Mo and Te；
(3) with 0.2 DEG C/h of rate slow cooling, MoTe in the process2It is nucleated and gradually grows up；When furnace body temperature
When degree is down to 500 DEG C -550 DEG C, quartz ampoule is taken out and is centrifuged from burner hearth rapidly, the MoTe for obtaining growth2Monocrystalline with it is extra
Te fluxing agent separation, obtain body block MoTe2Monocrystalline；
(4) MoTe is prepared using liquid phase stripping method2Nano dispersion fluid.By MoTe2Monocrystalline is put into the centrifuge tube for filling NMP
Ultrasound is carried out, MoTe is obtained2Dispersion liquid.
(5) dispersion liquid of acquisition is centrifuged, revolving speed is 2000 revs/min, and the time is 20 minutes, takes supernatant.
(6) by MoTe2The silicon wafer upper surface of supernatant spin coating after cleaning, is dried in the environment of 80 DEG C later,
Nmp solution is set to volatilize completely.Obtain MoTe2The full light Terahertz modulator of/Si composite construction.
Terahertz preparation test is carried out to device manufactured in the present embodiment.Use terahertz time-domain spectroscopy (THz-TDS) system
System, is placed in Terahertz focal point for device, using the light source irradiating sample surface of 800nm, tests its modulating performance.As a result such as
Shown in Fig. 3.Modulation depth is linearly increasing with pump power, under the power of 300mW, modulation depth 90.7%.
Embodiment 2
(1) Te and Mo are weighed according to the ratio of molar ratio Te:Mo=15:1, then raw material is fitted into quartz ampoule, taken out true
Tube sealing is sintered after sky；
(2) quartz ampoule is put into heating furnace, using interim temperature program, is warming up to 600 DEG C within 10 hours first, constant temperature
20 hours；Then it is warming up within 15 hours 850 DEG C, constant temperature 25 hours, so that the abundant combination reaction of Mo and Te；
(3) with 2 DEG C/h of rate slow cooling, when furnace body temperature is down to 500 DEG C -550 DEG C, rapidly by quartz ampoule
It takes out and is centrifuged from burner hearth, the MoTe for obtaining growth2Monocrystalline is separated with extra Te fluxing agent, obtains body block MoTe2Monocrystalline；
(4) MoTe is prepared using liquid phase stripping method2Nano dispersion fluid.By MoTe2Monocrystalline is put into the centrifuge tube for filling NMP
Ultrasound is carried out, MoTe is obtained2Dispersion liquid.
(5) dispersion liquid of acquisition is centrifuged, revolving speed 5000rpm, the time is 10 minutes, takes supernatant.
(6) by MoTe2The silicon wafer upper surface of supernatant spin coating after cleaning, is dried in the environment of 80 DEG C later,
So that nmp solution is volatilized completely, obtains MoTe2The full light Terahertz modulator of/Si composite construction.
Terahertz preparation test is carried out to device manufactured in the present embodiment.Use terahertz time-domain spectroscopy (THz-TDS) system
System, is placed in Terahertz focal point for device, using the light source irradiating sample surface of 1064nm, tests its modulating performance.As a result
As shown in Figure 4.Under the pump power of 50mW, modulation depth is up to 94%, and modulation depth increases with pump power and increased,
Maximum percentage modulation is 99.9%, shows MoTe of the invention2The full light Terahertz modulator modulation sensitivity with higher of/Si
And modulation depth.As shown in figure 5, being more than 50% in 0.3-2THz range internal modulation depth, show MoTe of the invention2/ Si is complete
Light Terahertz modulator has wide-band modulation characteristic.
Embodiment 3
(1) Te and Mo are weighed according to the ratio of molar ratio Te:Mo=12:1, then raw material is fitted into quartz ampoule, taken out true
Tube sealing is sintered after sky；
(2) quartz ampoule is put into heating furnace, using interim temperature program, is warming up to 500 DEG C within 8 hours first, constant temperature
23 hours；Then it is warming up within 12 hours 8650 DEG C, constant temperature 23 hours, so that the abundant combination reaction of Mo and Te；
(3) with 1 DEG C/h of rate slow cooling, when furnace body temperature is down to 500 DEG C -550 DEG C, rapidly by quartz ampoule
It takes out and is centrifuged from burner hearth, the MoTe for obtaining growth2Monocrystalline is separated with extra Te fluxing agent, obtains body block MoTe2Monocrystalline；
(4) MoTe is prepared using liquid phase stripping method2Nano dispersion fluid.By MoTe2Monocrystalline is put into the centrifuge tube for filling NMP
Ultrasound is carried out, MoTe is obtained2Dispersion liquid.
(5) dispersion liquid of acquisition is centrifuged, revolving speed 3500rpm, the time is 15 minutes, takes supernatant.
(6) by MoTe2The silicon wafer upper surface of supernatant spin coating after cleaning, is dried in the environment of 80 DEG C later,
So that nmp solution is volatilized completely, obtains MoTe2The full light Terahertz modulator of/Si composite construction.
Terahertz preparation test is carried out to device manufactured in the present embodiment.Device is placed in Terahertz focal point, is used
The light source irradiating sample surface of 1064nm, tests its modulating performance, and under the pump power of 50mW, modulation depth is up to 93%,
And modulation depth increases with pump power and is increased, maximum percentage modulation 99.9% shows MoTe of the invention2The full light of/Si
Terahertz modulator modulation sensitivity with higher and modulation depth.0.3-2THz range internal modulation depth also above
50%, show MoTe of the invention2The full light Terahertz modulator of/Si has wide-band modulation characteristic.
Claims (9)
1. a kind of MoTe2With the full light Terahertz modulator of Si composite construction, characterized in that served as a contrast including semiconductor Si substrate and Si
The MoTe of bottom surface covering2Layer.
2. MoTe according to claim 12With the full light Terahertz modulator of Si composite construction, characterized in that the MoTe2
Layer is located at the upper surface of semiconductor Si substrate.
3. MoTe according to claim 1 or 22With the full light Terahertz modulator of Si composite construction, characterized in that described
MoTe2Layer is by 2H phase MoTe2The evenly dispersed stacking formation of nanometer sheet.
4. MoTe described in a kind of claim 12With the preparation method of the full light Terahertz modulator of Si composite construction, characterized in that packet
Include following steps:
(1) Te and Mo are weighed according to the ratio of molar ratio Te:Mo=10~15:1, is fitted into quartz ampoule and mixes, burnt after vacuumizing
Tie tube sealing；
(2) quartz ampoule is put into heating furnace, stage heating, so that the abundant combination reaction of Mo and Te；
(3) after completion of the reaction, it when furnace body temperature is down to 500~550 DEG C, takes out quartz ampoule and is centrifuged, obtain growth
MoTe2Monocrystalline is separated with extra Te fluxing agent, obtains MoTe2Body block monocrystalline；
(4) by MoTe2Body block monocrystalline, which is put into the centrifuge tube for fill NMP, carries out ultrasound, obtains MoTe2Dispersion liquid；
(5) dispersion liquid of acquisition is centrifuged, takes supernatant；
(6) by MoTe2The silicon chip surface of supernatant spin coating after cleaning, drying, makes nmp solution volatilize completely, obtains MoTe2With
The Terahertz modulator of Si composite construction.
5. MoTe according to claim 22With the preparation method of the full light Terahertz modulator of Si composite construction, characterized in that
The vacuum degree vacuumized in the step (1) is 3~5 × 10-4Pa。
6. MoTe according to claim 22With the preparation method of the full light Terahertz modulator of Si composite construction, characterized in that
Interim heating in the step (2), is warming up to 400~600 DEG C, constant temperature 20~25 hours for 5~10 hours first；Then 10
It is warming up within~15 hours 850~880 DEG C, constant temperature 20~25 hours.
7. MoTe according to claim 22With the preparation method of the full light Terahertz modulator of Si composite construction, characterized in that
Furnace body is cooled down in the step (3) with 0.2~2 DEG C/h of rate.
8. MoTe according to claim 22With the preparation method of the full light Terahertz modulator of Si composite construction, characterized in that
The revolving speed being centrifuged in the step (5) is 2000~5000 revs/min, and the time is 10~20 minutes.
9. MoTe according to claim 22With the preparation method of the full light Terahertz modulator of Si composite construction, characterized in that
Drying temperature is 80~100 DEG C in the step (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910826305.0A CN110531540A (en) | 2019-09-03 | 2019-09-03 | MoTe2With the full light Terahertz modulator of Si composite construction and preparation method thereof |
Applications Claiming Priority (1)
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