CN113050305A - Based on MoS2Terahertz modulator with Si composite structure and regulation and control method thereof - Google Patents
Based on MoS2Terahertz modulator with Si composite structure and regulation and control method thereof Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
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Abstract
The invention discloses a method based on MoS2The terahertz modulator with the Si composite structure comprises a semiconductor Si substrate and MoS grown on the surface of the Si substrate2The material of the layer and the Si substrate is single-side polished p-type doped silicon, MoS2The layer is grown on the polished surface of the Si substrate by magnetron sputtering, and the shape of the layer is vertical. By the technical scheme, the problems that the conventional terahertz modulator lacks materials for effectively and dynamically regulating terahertz waves, the device preparation and processing technology is complex, a common modulation method is difficult to modulate and enhance the transmission amplitude of the terahertz waves and the like can be solved.
Description
Technical Field
The invention belongs to the technical field of terahertz application, and particularly relates to a terahertz based terahertz modulator based on MoS2And a terahertz modulator with a Si composite structure and a regulation and control method thereof.
Background
The terahertz wave is an electromagnetic wave with the frequency range of O.1-10THz, and compared with microwaves and optical waves, the terahertz wave has fingerprint spectrum characteristics on certain dangerous goods substances, good penetrability on certain nonpolar substances, low terahertz photon energy, weak ionizing radiation and other characteristics, so that the terahertz wave has a very wide application prospect, and can be used in the fields of spectral characterization, security inspection imaging and the like of materials. In addition, with the start of 5G commercial applications, wireless mobile communication has been on the trend of high speed and broadband. The development of terahertz communication from millimeter wave communication to higher frequency bands has become a hot spot for domestic and foreign communication research and industrial application. The terahertz wireless communication has the advantages of high transmission rate, good directivity, strong anti-interference capability and the like, but the most critical factor which currently limits the popularization and application of the terahertz communication is still the maturity of related devices. In recent years, with the rapid improvement of terahertz scientific theory and corresponding technical level, people can deeply research terahertz devices, and the application of terahertz is gradually increased. Among the devices, the terahertz modulator is one of the core devices of the whole set of terahertz communication system, and the complexity and cost of the terahertz communication system can be effectively reduced by reasonably developing and using the terahertz modulator, so that the terahertz modulator and a related modulation method need to be researched to effectively regulate and control terahertz waves
Currently, a commonly used method for modulating terahertz waves is to use semiconductor materials and metamaterials. The semiconductor material can realize the functional regulation and control of terahertz waves, including the regulation and control of the amplitude, the phase and the polarization state of the terahertz waves, such as a terahertz all-optical modulator, a terahertz Split Ring Resonator (SRR) and the like, by changing the type of the material and artificially designing the shape and the size of the periodic structure unit of the metamaterial. The terahertz regulating and controlling device based on the metamaterial is generally composed of a metal material or a metal and a dielectric layer, the realization of the function depends on the pre-designed structural parameters, and the terahertz wave cannot be dynamically regulated and controlled in practical application. Meanwhile, the design method of the graph structure parameters of the metamaterial is complex, and certain requirements are placed on process conditions in actual preparation. Besides metamaterials, bulk materials such as Si, Ge, ZnTe and GaP are generally adopted in terahertz regulating and controlling devices based on semiconductor materials, and the modulation depth and the modulation rate of the devices are limited by the lower mobility and the slower free carrier recombination speed of traditional semiconductor materials such as Si. And the semiconductor industry in China starts late, the industrialization degree is low, and advanced and mature semiconductor technology is lacked to manufacture good block materials.
In recent years, two-dimensional materials have attracted much attention in the field of device research due to their unique photoelectric properties, and common two-dimensional layered materials include graphene, hexagonal boron nitride, phospholene, chromium trihalide, transition metal carbon nitride compounds (MXenes), transition metal chalcogenide compounds (TMDCs), and the like. Wherein molybdenum disulfide (MoS)2) Is a typical transition metal chalcogenide with the notable feature that the bulk material is an indirect bandgap with an energy band width of 1.3eV, the single layer material is a direct bandgap with an energy band width of 1.8 eV. As the number of layers of the material decreases, the energy band width thereof gradually increases and finally changes from an indirect band gap to a direct band gap. MoS2The band gap adjustable characteristic of the semiconductor material enables the semiconductor material to have good light absorption characteristics compared with a semiconductor material in visible light and infrared wave bands. MoS2Also has good thermal stability, and can be used in the presence of oxygen at 350 ℃ and in the absence of oxygen at 1100 ℃. Furthermore, MoS2The characteristics of good ductility and high carrier mobility of the two-dimensional material provide a new direction for realizing terahertz wave dynamic regulation under the action of an external field, namely terahertz waves can be regulated and controlled by forming a composite structure by combining with a traditional semiconductor.
Existing utilization of MoS2And conventional semiconductors such as Si, Ge have achieved higher modulation depth and modulation bandwidth. Compared with the conventional semiconductor which uses a single semiconductor, the modulation result is that the transmission amplitude of the terahertz wave is reduced along with the increase of the power of the external pump laser, the external pump laser directly irradiates the surface of the device to generate photon-generated carriers, and the dynamic control of the transmission amplitude of the terahertz wave can be realized by changing the power intensity of the pump laser.
Disclosure of Invention
Aiming at the defects that the existing terahertz modulator is lack of materials for effectively and dynamically regulating terahertz waves, the device preparation and processing technology is complex, and the common modulation method is difficult to realize modulation enhancementThe invention provides a high-sensitivity broadband MoS (molecular optical modeling system) based on Hertz wave transmission amplitude and other problems2And a Si composite structure terahertz modulator and a regulation and control method thereof, and also provides a preparation method of the modulator. The specific technical scheme of the invention is as follows:
based on MoS2And a terahertz modulator of Si composite structure, comprising a semiconductor Si substrate and MoS grown on the surface of the Si substrate2And (3) a layer.
Further, the material of the Si substrate is single-side polished p-type doped silicon.
Further, the MoS2The layer is grown on the polished surface of the Si substrate by magnetron sputtering, and the shape of the layer is vertical.
Further, the resistivity of the Si substrate is 300k omega-320 k omega, and the MoS is2The thickness of the layer is 40nm to 50 nm.
Based on MoS2And a method for regulating a terahertz modulator of a Si composite structure, the method comprising the steps of:
s1: a terahertz time-domain spectroscopy system, namely THz-TDS, and continuous pump laser with the wavelength of 808nm are adopted as a modulation light source;
s2: fixing the terahertz modulator in the middle by utilizing a front iron sheet and a rear iron sheet;
s3: the position and the intensity of the continuous pumping laser irradiation terahertz modulator are changed, and the modulation of the transmission amplitude of the terahertz wave is realized:
when the continuous pumping laser only irradiates on the iron sheet, only a heating effect is provided for the terahertz modulator, and the transmission amplitude of the terahertz wave is increased along with the increase of the power of the applied continuous pumping laser;
when the continuous pump laser irradiates the terahertz modulator, heating action and illumination action are simultaneously provided for the terahertz modulator, and the transmission amplitude of terahertz waves is reduced along with the increase of the power of the external pump laser; within the range of 0.3-1.6 THz, the terahertz modulator has a modulation effect along with the change of the power of the external continuous pumping laser, which indicates that the terahertz modulator has a broadband modulation characteristic.
The invention has the beneficial effects that:
1. the substrate used for the modulator of the present invention is p-type doped Si, with MoS2After the heterojunction is formed, the number of carriers generated in a heating and illumination non-equilibrium state is more, and the transmission intensity of the terahertz wave can be obviously modulated.
2. The invention utilizes the magnetron sputtering method to manufacture MoS with a vertical structure in a modulator in large area2Layer having a structure effective to conduct the Si substrate and the MoS2Layer, which allows for rapid separation and transport of photogenerated carriers in a direction perpendicular to the plane of the substrate.
3. The terahertz modulator is simple in preparation process, the device modulation method is simple and easy to implement, and the terahertz wave transmission amplitude can be dynamically adjusted within the temperature range of 25-160 ℃.
Drawings
In order to illustrate embodiments of the present invention or technical solutions in the prior art more clearly, the drawings which are needed in the embodiments will be briefly described below, so that the features and advantages of the present invention can be understood more clearly by referring to the drawings, which are schematic and should not be construed as limiting the present invention in any way, and for a person skilled in the art, other drawings can be obtained on the basis of these drawings without any inventive effort. Wherein:
FIG. 1 is a curve of terahertz wave transmission amplitude along with laser power change under heating modulation of 808nm continuous pumping laser of a terahertz modulator prepared by the invention;
FIG. 2 is a curve of terahertz wave transmission amplitude along with laser power variation under 808nm continuous pumping laser heating modulation of an individual Si substrate;
FIG. 3 is a curve of terahertz wave transmission amplitude along with laser power variation under 808nm continuous pumping laser pumping modulation of the terahertz modulator prepared by the invention;
FIG. 4 is a curve of terahertz wave transmission amplitude along with laser power variation under 808nm continuous pumping laser pumping modulation of an individual Si substrate.
Detailed Description
In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments of the present invention and features of the embodiments may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
Based on MoS2And a terahertz modulator of Si composite structure, comprising a semiconductor Si substrate and MoS grown on the surface of the Si substrate2And (3) a layer.
Preferably, the material of the Si substrate is single-side polished p-type doped silicon.
Preferably, MoS2The layer is grown on the polished surface of the Si substrate by magnetron sputtering, and the shape of the layer is vertical.
Preferably, the Si substrate has a resistivity of 300k Ω -320k Ω, MoS2The thickness of the layer was 50 nm.
Based on MoS2The preparation method of the terahertz modulator with the Si composite structure comprises the following steps:
s1: cleaning the Si substrate to remove SiO from the Si surface according to standard cleaning techniques2Layers and organic impurities;
s2: in the preparation process, MoS is used2(99.998%) as a sputtering source, the reaction chamber was evacuated to 1.0X 10- 5Pa, then heating the Si substrate to 500 ℃, and blowing argon gas with the flow rate of 25sccm and the pressure of 1.0 Pa;
s3: adding 50W of sputtering power to maintain the deposition rate at 2.0nm min-1After the deposition time is 25-30 minutes, the vertical MoS with the thickness of 40-50nm is prepared2Nanosheets.
Based on MoS2The method for regulating the terahertz modulator with the Si composite structure comprises the following steps:
step 1: a terahertz time-domain spectroscopy system, namely THz-TDS, and continuous pump laser with the wavelength of 808nm are adopted as a modulation light source;
step 2: fixing the terahertz modulator in the middle by utilizing a front iron sheet and a rear iron sheet;
step 3: the position and the intensity of the continuous pumping laser irradiation terahertz modulator are changed, and the modulation of the transmission amplitude of the terahertz wave is realized:
when the continuous pumping laser only irradiates on the iron sheet, only a heating effect is provided for the terahertz modulator, and the transmission amplitude of the terahertz wave is increased along with the increase of the external laser power;
when the continuous pumping laser irradiates the terahertz modulator, heating action and illumination action are simultaneously provided for the terahertz modulator, and the transmission amplitude of terahertz waves is reduced along with the increase of the external laser power; within the range of 0.3-1.6 THz, the terahertz modulator has a modulation effect along with the change of the external laser power, which indicates that the terahertz modulator has a broadband modulation characteristic.
For the convenience of understanding the above technical aspects of the present invention, the following detailed description will be given of the above technical aspects of the present invention by way of specific examples.
Example 1
Preparation of MoS2And a terahertz modulator of a Si composite structure, comprising the steps of:
s1: cleaning the Si substrate to remove SiO from the Si surface according to standard cleaning techniques2Layers and organic impurities;
s2: in the preparation process, MoS is used2(99.998%) as a sputtering source, the reaction chamber was evacuated to 1.0X 10- 5Pa, then heating the Si substrate to 500 ℃, and blowing argon gas with the flow rate of 25sccm and the pressure of 1.0 Pa;
s3: adding 50W of sputtering power to maintain the deposition rate at 2.0nm min-1And the vertical MoS with the thickness of 50nm is prepared after the deposition time is 30 minutes2Nanosheets.
Example 2
A comparative test of heating-modulated terahertz waves was performed using the terahertz modulator prepared in example 1 and a Si substrate alone.
FIG. 1 is a schematic view of an embodimentA performance comparison test curve of the terahertz modulator prepared in example 1 under heating modulation of continuous pumping lasers with different powers is shown in fig. 2, which is a performance comparison test curve of a single Si substrate under heating modulation of continuous pumping lasers with different powers. From fig. 1, it can be seen that the transmission amplitude of the terahertz wave gradually increases under different power heating modulations. The trend of the transmission amplitude of the terahertz wave in fig. 2 with the power is consistent with that in fig. 1. The doped Si substrate is converted from a semiconductor to a metal state under the heating condition, so that the scattering of a carrier caused by lattice vibration is increased, the conductivity is reduced, and the terahertz wave transmission is increased. Furthermore, the terahertz wave transmission amplitude in FIG. 1 increased more strongly and more rapidly under the same heating conditions than in FIG. 2, indicating that the MoS-based of the present invention2And the terahertz modulator with the Si composite structure has the function of rapidly enhancing terahertz wave transmission under the heating condition.
Example 3
MoS prepared in example 1 was used2And the/Si terahertz modulator and the single Si substrate are used for carrying out a contrast test of continuous pumping laser pumping modulation terahertz waves.
Fig. 3 is a performance comparison test curve of the terahertz modulator prepared in example 1 under different power continuous pumping laser pump modulation, and fig. 4 is a performance comparison test curve of a single Si substrate under different power continuous pumping laser pump modulation. The terahertz time-domain graph is obtained through testing, and as can be seen from fig. 3, the terahertz wave transmission amplitude is reduced along with the increase of the laser power, and compared with fig. 4, the terahertz wave transmission amplitude under the same power condition is increased along with the increase of the external power.
Shows that under the condition of changing the pumping power, the invention is based on MoS2Compared with a terahertz modulator with a Si composite structure and pure Si, the terahertz modulator has the function of modulating and enhancing terahertz wave transmission. The reason is that the continuous laser irradiates the pure Si substrate: the pumping effect is dominant, a large number of photon-generated carriers are generated at the moment, the conductivity of the pure Si substrate is increased, the absorption and reflection of the terahertz waves are enhanced, and therefore the transmission amplitude of the terahertz waves is weakened; continuous laser irradiation of MoS-based materials of the invention2And a terahertz modulator of a Si composite structure: unbalanced light carrierMoS with flow generated on both sides of heterojunction2Layers and pure Si substrates, the number of free carriers on both sides of the heterojunction decreases when equilibrium is reached, due to the MoS of the vertical structure2Is more beneficial to the transmission and the recombination of free carriers at two sides of the heterojunction, so the MoS-based semiconductor device is based on the MoS2Compared with the conductivity of a modulator with a Si composite structure and pure Si, the conductivity of the modulator is reduced, and the transmission amplitude of the terahertz wave is enhanced.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. Based on MoS2And a terahertz modulator of a Si composite structure, which is characterized by comprising a semiconductor Si substrate and MoS grown on the surface of the Si substrate2And (3) a layer.
2. MoS-based according to claim 12And the terahertz modulator with the Si composite structure is characterized in that the Si substrate is made of single-side polished p-type doped silicon.
3. MoS-based according to claim 1 or 22And a terahertz modulator of a Si composite structure, characterized in that the MoS2The layer is grown on the polished surface of the Si substrate by magnetron sputtering, and the shape of the layer is vertical.
4. MoS-based according to claim 1 or 22And a terahertz modulator of a Si composite structure, characterized in that the resistivity of the Si substrate is 300k omega-320 k omega, and the MoS2The thickness of the layer is 40nm to 50 nm.
5. MoS-based according to claim 1 or 22Method for controlling terahertz modulator of Si composite structure, and terahertz modulatorCharacterized in that the regulation method comprises the following steps:
s1: a terahertz time-domain spectroscopy system, namely THz-TDS, and continuous pump laser with the wavelength of 808nm are adopted as a modulation light source;
s2: fixing the terahertz modulator in the middle by utilizing a front iron sheet and a rear iron sheet;
s3: the position and the intensity of the continuous pumping laser irradiation terahertz modulator are changed, and the modulation of the transmission amplitude of the terahertz wave is realized:
when the continuous pumping laser only irradiates on the iron sheet, only a heating effect is provided for the terahertz modulator, and the transmission amplitude of the terahertz wave is increased along with the increase of the power of the applied continuous pumping laser;
when the continuous pump laser irradiates the terahertz modulator, heating action and illumination action are simultaneously provided for the terahertz modulator, and the transmission amplitude of terahertz waves is reduced along with the increase of the power of the external pump laser; within the range of 0.3-1.6 THz, the terahertz modulator has a modulation effect along with the change of the power of the external continuous pumping laser, which indicates that the terahertz modulator has a broadband modulation characteristic.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115508307A (en) * | 2022-10-14 | 2022-12-23 | 中国人民解放军军事科学院国防科技创新研究院 | Terahertz super-surface sensor and terahertz transmission spectrum determination method |
| CN116841059A (en) * | 2023-07-25 | 2023-10-03 | 上海铭锟半导体有限公司 | Terahertz modulator of silicon-based molybdenum disulfide and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140001379A1 (en) * | 2011-03-16 | 2014-01-02 | Gwangju Institute Of Science And Technology | Terahertz wave modulator based on hole-injection and -transfer |
| CN108919587A (en) * | 2018-06-12 | 2018-11-30 | 西北大学 | One kind being based on transition metal chalcogenide terahertz sources source and exciting method |
| CN110531540A (en) * | 2019-09-03 | 2019-12-03 | 山东大学 | MoTe2With the full light Terahertz modulator of Si composite construction and preparation method thereof |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140001379A1 (en) * | 2011-03-16 | 2014-01-02 | Gwangju Institute Of Science And Technology | Terahertz wave modulator based on hole-injection and -transfer |
| CN108919587A (en) * | 2018-06-12 | 2018-11-30 | 西北大学 | One kind being based on transition metal chalcogenide terahertz sources source and exciting method |
| CN110531540A (en) * | 2019-09-03 | 2019-12-03 | 山东大学 | MoTe2With the full light Terahertz modulator of Si composite construction and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| SAI CHEN 等: "Ultrasensitive terahertz modulation by silicon-grown MoS2 nanosheets", 《NANOSCALE》, 28 January 2016 (2016-01-28), pages 4714 - 4718 * |
| SHUANG QIAO 等: "Large Lateral Photovoltage Observed in MoS2 Thickness-Modulated ITO/MoS2/p-Si Heterojunctions", 《ACS APPLIED MATERIALS & INTERFACES》, 11 May 2017 (2017-05-11), pages 18378 - 18385 * |
| SHUANG QIAO 等: "Laser-induced photoresistance effect in Si-based vertical standing MoS2 nanoplate heterojunctions for self-powered high performance broadband photodetection", 《JOURNAL OF MATERIALS CHEMISTRY C》, 2 August 2019 (2019-08-02), pages 10642 - 10651 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115508307A (en) * | 2022-10-14 | 2022-12-23 | 中国人民解放军军事科学院国防科技创新研究院 | Terahertz super-surface sensor and terahertz transmission spectrum determination method |
| CN116841059A (en) * | 2023-07-25 | 2023-10-03 | 上海铭锟半导体有限公司 | Terahertz modulator of silicon-based molybdenum disulfide and preparation method thereof |
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