CN109004060B - Terahertz wave detector - Google Patents
Terahertz wave detector Download PDFInfo
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- CN109004060B CN109004060B CN201810837978.1A CN201810837978A CN109004060B CN 109004060 B CN109004060 B CN 109004060B CN 201810837978 A CN201810837978 A CN 201810837978A CN 109004060 B CN109004060 B CN 109004060B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention belongs to detector technology fields, more particularly to a kind of terahertz wave detector, supporting layer presoma is prepared using six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid, potassium hydroxide methanol solution, t-butyl peroxybenzoate, manganese acetate, cobalt nitrate, triscyclopentadienyl samarium as raw material；Separation layer presoma is prepared using graphene oxide, epoxy resin, glycerin monostearate and diphenyl silanediol, paraffin as raw material；Nano powder is added in separation layer presoma, carbon nanotube is added, prepares enhancement layer presoma；Separation layer presoma, enhancement layer presoma, supporting layer presoma are successively coated in heat resistant substrates, obtain substrate；Aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；Then active region mesa, gate medium, ohmic contact windows, electrode are prepared, to obtain terahertz wave detector, high speed, highly sensitive, high s/n ratio, which detect, to be realized to THz wave at room temperature.
Description
Be on June 26th, 2017 the invention belongs to entitled terahertz wave detector and preparation method thereof, the applying date,
Application No. is the divisional applications of 201710495198.9 patent applications, are product technology part.
Technical field
The invention belongs to detector technology fields, and in particular to a kind of terahertz wave detector.
Background technique
Terahertz (Terahertz, THz) radiation is the general designation of the electromagnetic radiation to a specific band, typically refers to frequency
Rate is in 0.1THz ~ 10THz(wavelength in 3mm ~ 30um) electromagnetic wave in range, it is located at microwave and infrared spoke in electromagnetic spectrum
Between penetrating.In person in electronics, the electromagnetic wave of this wave band is referred to as millimeter wave and submillimeter wave again；And it is led in spectroscopy
Domain, it is also referred to as far infrared.
Why terahertz emission causes our keen interests, is because it is with many unique properties and widely
Application prospect.Terahertz radiation source includes the characteristics such as wideband, perspectivity, safety, so it is in physics, chemistry, biology
The basic fields such as medicine, and before being had important application in terms of having noninvasive imaging, safety inspection, spectrum analysis and radar communication
Scape.
As terahertz emission source, terahertz detection is also another key technology and terahertz in Terahertz science and technology
Hereby technical application puts into another key link of practical application.Currently, terahertz signal Detection Techniques can be divided into from principle
Coherent pulse time domain continuous wave Detection Techniques and incoherent two class of DIRECT ENERGY Detection Techniques.Terahertz arteries and veins based on coherent technique
Rush time domain continuous wave Detection Techniques using with terahertz pulse generate it is similar by the way of carry out coherent detection, a kind of detection method
Referred to as terahertz time-domain spectroscopic technology；It is another kind of to select superhet detector in THz wave low frequency end.Main detection method
There are heat radiation probe method, Fourier transform spectrometry (FTS), time-domain spectroscopy method, heterodyne system probe method and Terahertz quantum trap infrared light
Son detection.In the development and utilization of terahertz wave band, detection terahertz signal has very important meaning.Because of a side
Face, since terahertz emission source output power is low, the factors such as heat radiation ambient noise is big in frequency range, water vapour decaying is serious
Influence, optical region electromagnetic wave phase ratio with shorter wavelength lower from the reflected terahertz emission signal of target, terahertz
Hereby wave photon energy is low, and ambient noise generally takes up significant status.This requires terahertz detectors to have very high detection spirit
Sensitivity and frequency resolution, on the other hand, with Terahertz Technology carrying out in a deep going way in the especially military field of each field, no
The disconnected requirement for improving detectivity and becoming inevitable.
Since the radiant power of current Terahertz light source is generally all relatively low, and existing terahertz wave detector generally has
There are response speed slow (pyroelectric detector), look-in frequency narrow (Schottky diode), poor sensitivity (Golay cell detection
Device) and the shortcomings that need low-temperature working (bolometer), therefore develop a kind of high speed, high sensitivity, high noise and in room temperature
Under the conditions of the terahertz wave detector that can work it is particularly important.
In the detector of early period, three extremely sub- coupled antennas are used as source, leakage and gate electrode integrated with HEMT device simultaneously, grid
In the same plane with source electrode antenna, metal gates play biggish shielding to the transverse electric field under grid at 2 DEG to pole antenna
Effect, causes the coupling efficiency of antenna not high low with response device degree.
Therefore, researcher thirsts for always developing a kind of more mature high sensitivity for a long time, and look-in frequency is wide, body
Product is small, high speed, inexpensively, the commercial terahertz detector of working and room temperature, substantially to push the development and application of THz technology.
Summary of the invention
The invention discloses a kind of terahertz wave detectors and preparation method thereof, with aluminum gallium nitride/gallium nitrogen high electron mobility
Field effect transistor (HEMT) is basic structure, two-dimensional electron gas electron concentration with higher in the field effect transistor and
Mobility obtains realizing high speed, highly sensitive, high s/n ratio detection wave spectrum detection device to THz wave at room temperature, most
The detection to THz wave is realized eventually.
The present invention adopts the following technical scheme:
A kind of preparation method of terahertz wave detector, comprising the following steps:
(1) under nitrogen protection, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid are mixed；Then
Return stirring 5 minutes, potassium hydroxide methanol solution and t-butyl peroxybenzoate is then added；React natural cooling after ten minutes
To room temperature, the centrifugation of ethyl acetate coagulation is added；Resulting dispersion system in ethyl alcohol is scattered in after centrifugal sediment is washed；Then it is added
Manganese acetate, cobalt nitrate, water stir 10 minutes addition triscyclopentadienyl samariums, stir 1 hour, be supported a layer presoma；
(2) in dispersion be added polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 50 DEG C stir 1 hour, then plus
Enter 4,4- diamino phenylmethane, ethyl orthosilicate, return stirring 10 minutes, is then concentrated to get the concentrate of solid content 80%；It will
Concentrate carries out hypergravity processing；Then it is freeze-dried, obtains nano powder；The revolving speed of hypergravity processing is 35000~
40000rpm；The flow of concentrate is 80~90mL/min；
(3) by graphene oxide, epoxy resin be added acetone, return stirring be added after twenty minutes glycerin monostearate with
Diphenyl silanediol continues stirring 10 minutes, and paraffin is then added, and stirs 30 minutes, obtains separation layer presoma；
(4) nano powder is added in separation layer presoma, carbon nanotube is added in stirring after five minutes, and stirring obtains for 10 minutes
Enhancement layer presoma；
(5) separation layer presoma, enhancement layer presoma, supporting layer presoma are successively coated in heat resistant substrates, are served as a contrast
Bottom；Drying at room temperature after coating every time；
(6) aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；Then active region mesa, gate medium, ohm are prepared
Contact window, electrode, to obtain terahertz wave detector.
The invention also discloses a kind of preparation methods of THz wave detection device, comprising the following steps:
(1) under nitrogen protection, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid are mixed；Then
Return stirring 5 minutes, potassium hydroxide methanol solution and t-butyl peroxybenzoate is then added；React natural cooling after ten minutes
To room temperature, the centrifugation of ethyl acetate coagulation is added；Resulting dispersion system in ethyl alcohol is scattered in after centrifugal sediment is washed；Then it is added
Manganese acetate, cobalt nitrate, water stir 10 minutes addition triscyclopentadienyl samariums, stir 1 hour, be supported a layer presoma；
(2) in dispersion be added polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 50 DEG C stir 1 hour, then plus
Enter 4,4- diamino phenylmethane, ethyl orthosilicate, return stirring 10 minutes, is then concentrated to get the concentrate of solid content 80%；It will
Concentrate carries out hypergravity processing；Then it is freeze-dried, obtains nano powder；The revolving speed of hypergravity processing is 35000~
40000rpm；The flow of concentrate is 80~90mL/min；
(3) by graphene oxide, epoxy resin be added acetone, return stirring be added after twenty minutes glycerin monostearate with
Diphenyl silanediol continues stirring 10 minutes, and paraffin is then added, and stirs 30 minutes, obtains separation layer presoma；
(4) nano powder is added in separation layer presoma, carbon nanotube is added in stirring after five minutes, and stirring obtains for 10 minutes
Enhancement layer presoma；
(5) separation layer presoma, enhancement layer presoma, supporting layer presoma are successively coated in heat resistant substrates, are served as a contrast
Bottom；Drying at room temperature after coating every time；
(6) aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；Then active region mesa, gate medium, ohm are prepared
Contact window, electrode, to obtain terahertz wave detector；Terahertz wave detector is packaged, THz wave spy is obtained
Survey device.
The invention also discloses a kind of preparation methods of THz wave detection system, comprising the following steps:
(1) under nitrogen protection, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid are mixed；Then
Return stirring 5 minutes, potassium hydroxide methanol solution and t-butyl peroxybenzoate is then added；React natural cooling after ten minutes
To room temperature, the centrifugation of ethyl acetate coagulation is added；Resulting dispersion system in ethyl alcohol is scattered in after centrifugal sediment is washed；Then it is added
Manganese acetate, cobalt nitrate, water stir 10 minutes addition triscyclopentadienyl samariums, stir 1 hour, be supported a layer presoma；
(2) in dispersion be added polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 50 DEG C stir 1 hour, then plus
Enter 4,4- diamino phenylmethane, ethyl orthosilicate, return stirring 10 minutes, is then concentrated to get the concentrate of solid content 80%；It will
Concentrate carries out hypergravity processing；Then it is freeze-dried, obtains nano powder；The revolving speed of hypergravity processing is 35000~
40000rpm；The flow of concentrate is 80~90mL/min；
(3) by graphene oxide, epoxy resin be added acetone, return stirring be added after twenty minutes glycerin monostearate with
Diphenyl silanediol continues stirring 10 minutes, and paraffin is then added, and stirs 30 minutes, obtains separation layer presoma；
(4) nano powder is added in separation layer presoma, carbon nanotube is added in stirring after five minutes, and stirring obtains for 10 minutes
Enhancement layer presoma；
(5) separation layer presoma, enhancement layer presoma, supporting layer presoma are successively coated in heat resistant substrates, are served as a contrast
Bottom；Drying at room temperature after coating every time；
(6) aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；Then active region mesa, gate medium, ohm are prepared
Contact window, electrode, to obtain terahertz wave detector；Terahertz wave detector is packaged, THz wave spy is obtained
Survey device；It combines THz wave detection device with bracket, computer, indicator light, obtains THz wave detection system.
In the present invention, creativeness is the preparation of substrate, has overturned the substrate of the prior art completely, it is subsequent on substrate into
The operation of one step, for example aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；Then prepare active region mesa, gate medium,
Ohmic contact windows, electrode belong to the prior art, and parameter as needed is designed, and will not generate to the technology of the present invention effect
It influences；Terahertz wave detector is packaged, the operation for obtaining THz wave detection device can also be according to chip epoxy packages
It carries out；It combines THz wave detection device with bracket, computer, indicator light, obtaining THz wave detection system can be according to machinery
Design, pc connection operation.Using THz wave detection system can be accurate, stable detection environment in THz wave.
In the present invention, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol, propionic acid, potassium hydroxide methanol solution,
T-butyl peroxybenzoate, manganese acetate, cobalt nitrate, water, triscyclopentadienyl samarium mass ratio be 15: 45: 38: 150: 80: 50: 3: 20: 30:
100:2；The matter of centrifugal sediment, polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 4,4- diamino phenylmethane, ethyl orthosilicate
Amount is than being 15: 55: 5: 0.1: 40: 50；Graphene oxide, epoxy resin, acetone, glycerin monostearate, diphenyl silanediol,
The mass ratio of paraffin is 5: 100: 150: 20: 30: 12；Nano powder, separation layer presoma mass ratio be 75: 100.
The invention also discloses a kind of preparation methods of terahertz wave detector substrate, comprising the following steps:
(1) under nitrogen protection, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid are mixed；Then
Return stirring 5 minutes, potassium hydroxide methanol solution and t-butyl peroxybenzoate is then added；React natural cooling after ten minutes
To room temperature, the centrifugation of ethyl acetate coagulation is added；Resulting dispersion system in ethyl alcohol is scattered in after centrifugal sediment is washed；Then it is added
Manganese acetate, cobalt nitrate, water stir 10 minutes addition triscyclopentadienyl samariums, stir 1 hour, be supported a layer presoma；
(2) in dispersion be added polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 50 DEG C stir 1 hour, then plus
Enter 4,4- diamino phenylmethane, ethyl orthosilicate, return stirring 10 minutes, is then concentrated to get the concentrate of solid content 80%；It will
Concentrate carries out hypergravity processing；Then it is freeze-dried, obtains nano powder；The revolving speed of hypergravity processing is 35000~
40000rpm；The flow of concentrate is 80~90mL/min；
(3) by graphene oxide, epoxy resin be added acetone, return stirring be added after twenty minutes glycerin monostearate with
Diphenyl silanediol continues stirring 10 minutes, and paraffin is then added, and stirs 30 minutes, obtains separation layer presoma；
(4) nano powder is added in separation layer presoma, carbon nanotube is added in stirring after five minutes, and stirring obtains for 10 minutes
Enhancement layer presoma；
(5) separation layer presoma, enhancement layer presoma, supporting layer presoma are successively coated in heat resistant substrates, are served as a contrast
Bottom；Drying at room temperature after coating every time.
The invention also discloses a kind of terahertz wave detector preparation methods of substrate presoma, comprising the following steps:
(1) under nitrogen protection, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid are mixed；Then
Return stirring 5 minutes, potassium hydroxide methanol solution and t-butyl peroxybenzoate is then added；React natural cooling after ten minutes
To room temperature, the centrifugation of ethyl acetate coagulation is added；Resulting dispersion system in ethyl alcohol is scattered in after centrifugal sediment is washed；Then it is added
Manganese acetate, cobalt nitrate, water stir 10 minutes addition triscyclopentadienyl samariums, stir 1 hour, be supported a layer presoma；
(2) in dispersion be added polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 50 DEG C stir 1 hour, then plus
Enter 4,4- diamino phenylmethane, ethyl orthosilicate, return stirring 10 minutes, is then concentrated to get the concentrate of solid content 80%；It will
Concentrate carries out hypergravity processing；Then it is freeze-dried, obtains nano powder；The revolving speed of hypergravity processing is 35000~
40000rpm；The flow of concentrate is 80~90mL/min；
(3) by graphene oxide, epoxy resin be added acetone, return stirring be added after twenty minutes glycerin monostearate with
Diphenyl silanediol continues stirring 10 minutes, and paraffin is then added, and stirs 30 minutes, obtains separation layer presoma；
(4) nano powder is added in separation layer presoma, carbon nanotube is added in stirring after five minutes, and stirring obtains for 10 minutes
Enhancement layer presoma；
(5) the terahertz wave detector substrate presoma includes separation layer presoma, enhancement layer presoma, supporting layer
Presoma.
The invention also discloses the products that above-mentioned preparation method obtains.
The mass concentration of potassium hydroxide is 4.5% in the potassium hydroxide methanol solution；The molecular weight of the polyvinyl alcohol is
1500~2000.Hydrogen peroxide, tetraphenylporphyrin iron are added while the present invention is by being added polyvinyl alcohol, in addition to increasing nano powder
Except surface-active, it is often more important that the molecular weight of polyvinyl alcohol is reduced i.e. have to the strand of polyvinyl alcohol it is certain
Degradation, after this mixes subsequent conductive nano powder with resin, improve metal oxide dispersion performance and continuous performance
There is crucial help, especially avoid polyvinyl alcohol to the influence of overall performance, has given full play to polyvinyl alcohol in conducting powder body surface
Face combines other compounds to improve activity and increases the advantages of compatibility is to embody good electrical properties, increases extension preparation
Process sintering effect.
In the present invention, the thickness difference of separation layer presoma, enhancement layer presoma, supporting layer presoma in heat resistant substrates
It is 50 microns, 500 microns, 260 microns；During extension prepares gallium nitrogen, significant change occurs for each layer, generates chemical reaction,
Separation layer presoma is first formed by curing cross-linked structure, embodies certain mechanical strength, is then carbonized, enhancement layer presoma nano powder
It interacts to form network structure with organic system, and generates chemical bond power with upper and lower level and make three layers to combine together, it is subsequent to have
The carbonization of machine layer, nano powder form compact texture, and supporting layer presoma occurs oxide and dissolves each other, and ultimately forms compact texture, special
In other dense material based on electric conductive oxidation compound, graphene, carbon nanotube and the element silicon contained simultaneously is improved
Its mechanical strength, so as to support overlying material；Thickness it is preferred, have after the substrate desquamation heat resistant substrates both guaranteed
Excellent mechanical property and electrical property, and guarantee that extension preparation process is not in pollution caused by organic matter flowing, displacement
The problems such as, so that sample surface morphology is good in the device of preparation, crackle is not present in epitaxial film, and N-shaped back end concentration is lower than
102cm-3。
The present invention limits dosage of each component and technological parameter, on the one hand because not can refer to text before making the present invention
It offers, more without theoretical direction, second aspect is because heteroplasmon is extremely closed particularly for detecting the preparation process of the heteroplasmon of device
Key is the basis of device performance, directly affects device application value, and the third aspect is because of lining prepared by the condition that the present invention limits
Bottom is prepared for device, and the technical effect of acquirement is very good, especially before separation layer presoma, enhancement layer presoma, supporting layer
The cooperation for driving body trilaminate material, had both solved the problems, such as hetero-junctions support, had in turn avoided existing for existing substrate such as sapphire
Defect, also as the use of nano powder, so that substrate mechanical property is strong, good electrical property.
The prior art is conceived to structure design, few for basic preparation research, and small part research is only raw in heteroplasmon
Long side.The fusing point and saturated vapor pressure of gallium nitrogen are high, are difficult to adopt usual way and prepare body monocrystalline.Current gallium in the world
Nitrogen growth is substantially prepared using hetero-epitaxy, on a sapphire substrate extension gallium nitrogen material, is the logical of production opto-electronic device
Use method；During MOCVD technology prepares gallium nitrogen, trimethyl gallium is as the source MO, NH3As the source N and with H2And N2Or this two
The mixed gas of kind gas is carrier gas, and reactant is loaded into reaction chamber and is reacted at a certain temperature, respective films are generated
The micel of material adsorbs on the surface of a substrate, is nucleated, growth, eventually forming required epitaxial layer.Due to gallium nitrogen and sapphire
The lattice mismatch and thermal mismatching of substrate are all very big, and the sample surface morphology of growth is very poor, and there are crackle, N-shaped back ends for epitaxial film
Concentration is usually 1018cm-3More than.The selection of material substrate is very big on extension aluminum gallium nitride/gallium nitrogen crystal quality influence, to device
Performance And Reliability have an important influence on, this is also the main reason for prior art terahertz wave detector is mature slow.
Existing to grow aluminum gallium nitride/gallium nitrogen using two-step method on sapphire, i.e., first in low temperature preparation buffer layer, high temperature is raw again
Long aluminum gallium nitride/gallium nitrogen, can slightly improve growth result；But raising is limited, and causes cost raising, complex steps, money
Source consumption, because the first step is also required to carry out at a high temperature of more than 500 degree, it is important to if first step existing defects can be serious
Second step is influenced, effect is not so good as directly to prepare on sapphire.The present invention designs one layer of separation layer positioned at resistance at normal temperature first
On hot substrate, it is coated with enhancement layer and supporting layer, then one step epitaxial growth aluminum gallium nitride of high temperature/gallium nitrogen, In on supporting layer
In growth course, sintering occurs simultaneously and forms compact texture for enhancement layer and supporting layer, can not only support aluminum gallium nitride/gallium nitrogen but also can
To solve the problems, such as that existing substrate and gallium nitrogen are unmatched, separation layer is polymeric layer, and extension preparation process is decomposed into carbon material, limit
Determine to combine together under thickness condition with compact texture, with heat resistant substrates without active force, the removing with heat resistant substrates both may be implemented,
Can have low resistance again, heat resistant substrates effect is simple, functions only as support early period, after the completion of growth, that is, can be removed, optional
Any surface is smooth, can bear the material of epitaxial temperature.
Material of the invention is wide with forbidden band, there are strong spontaneous polarization effects etc. in the ionic strong and crystal of bonding
Feature.Compared with traditional MESFET device, HEMTs of the invention two-dimensional electron gas with higher, at concentrations up to
1014cm2, and be spatially separated due to the electronics in potential well with donor impurity, electron mobility is greatly mentioned
Height shows as the good characteristic that HEMT device has high transconductance, high saturation current and higher cutoff frequency.
Based on the hetero-junctions that the present invention makes, there can be 5000 cm at normal temperature2The high electron mobility of/Vs, this makes it
Advantage is had more than existing device in the manufacture of high-frequency microwave device；Two-dimensional electron gas density is very high, usually up to 1014cm2, it is existing
There are 10 times of HEMT, is all strong polarization material this is mainly due to sill of the present invention, spontaneous polarization effect and by lattice mismatch
Caused piezoelectric polarization effect causes a large amount of fixed positive charge at interface, this directly results in high areal density two-dimensional electron gas
Formation.
High speed is still pursuing a goal for microelectronics；High temperature, high-power, Flouride-resistani acid phesphatase etc. are asked again without what is solved very well
Topic.Device of the invention is with energy gap is wider, saturated electrons rate is higher, breakdown voltage is bigger, dielectric constant is smaller, thermal conductivity
Can be more preferable the features such as, chemical property is more stable, high temperature resistant, corrosion-resistant, is very suitable for making anti-radiation, high frequency, high-power
With the electronic device and indigo plant, green light and ultraviolet photoelectron device of High Density Integration；Not only there is output power, cutoff frequency
High advantage is also equipped with the ability to bear to poor working conditions, it is expected in the inefficient high temperature of traditional devices institute, intense radiation
It is applied in environment.All these excellent properties, compensate for well existing semiconductor devices due to inherently lack
The problem of point causes.
The prior art mainly studies the influence of hetero-junctions and antenna to device, for substrate generate Influencing Mechanism also not
It is clear, but substrate is as device preparation and the important composition of structure as known to those skilled in the art, the influence to device is very
Greatly.Unfortunately, due to too big and electrochemistry the complexity of subject crossing, detecting devices field at present, disengaging is basic not yet
Sapphire, silicon carbide substrate research, the new substrate of design of the invention is used for the preparation of hetero-junctions, without changing
Existing device preparation technology, obtained excellent product performance have powerful application potential, and cast a brick to attract jade, it is desirable to grind in China
Study carefully personnel's multi-crossed disciplines, improve the various aspects of performance of detection device, avoid wooden pail effect, for China detect device development and
Effort.
Specific embodiment
In the present invention, creativeness is the preparation of substrate, has overturned the substrate of the prior art completely, it is subsequent on substrate into
The operation of one step, such as on substrate using 1100 DEG C of epitaxy (outside optional metal-organic chemical vapor epitaxy, molecular beam
Prolong method or hydride vapour phase epitaxy method) prepare aluminum gallium nitride/gallium nitrogen layer；Then active region mesa, gate medium, Ohmic contact are prepared
Window, electrode belong to the prior art, and parameter designing is existing universal design；After removing heat resistant substrates, THz wave is visited
It surveys device to be packaged, the operation for obtaining THz wave detection device can also be carried out according to chip epoxy packages；THz wave is visited
It surveys device to combine with bracket, computer, indicator light, obtaining THz wave detection system can operate according to Machine Design, pc connection.
Using THz wave detection system can be accurate, stable detection environment in THz wave.
Embodiment one
A kind of preparation method of terahertz wave detector, comprising the following steps:
(1) under nitrogen protection, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid are mixed；Then
Return stirring 5 minutes, potassium hydroxide methanol solution and t-butyl peroxybenzoate is then added；React natural cooling after ten minutes
To room temperature, the centrifugation of ethyl acetate coagulation is added；Resulting dispersion system in ethyl alcohol is scattered in after centrifugal sediment is washed；Then it is added
Manganese acetate, cobalt nitrate, water stir 10 minutes addition triscyclopentadienyl samariums, stir 1 hour, be supported a layer presoma；
(2) in dispersion be added polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 50 DEG C stir 1 hour, then plus
Enter 4,4- diamino phenylmethane, ethyl orthosilicate, return stirring 10 minutes, is then concentrated to get the concentrate of solid content 80%；It will
Concentrate carries out hypergravity processing；Then it is freeze-dried, obtains nano powder；The revolving speed of the hypergravity processing is 40000rpm；
The flow of concentrate is 90mL/min；
(3) by graphene oxide, epoxy resin be added acetone, return stirring be added after twenty minutes glycerin monostearate with
Diphenyl silanediol continues stirring 10 minutes, and paraffin is then added, and stirs 30 minutes, obtains separation layer presoma；
(4) nano powder is added in separation layer presoma, carbon nanotube is added in stirring after five minutes, and stirring obtains for 10 minutes
Enhancement layer presoma；
(5) separation layer presoma, enhancement layer presoma, supporting layer forerunner are successively coated in the sapphire substrates of cleaning
Body obtains substrate；Drying at room temperature after coating every time；
(6) aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；Remove sapphire, then prepare active region mesa,
Gate medium, ohmic contact windows, electrode, to obtain terahertz wave detector.
Meanwhile the solidification to the progress 180 DEG C/1 hour of the substrate of step (5), test discovery Td reach 476 DEG C；Using outer
Prolong the race of method sky to be sintered the substrate of step (5), obtains dense conductive material, compressive strength reaches 141MPa, bending modulus
Reach 6.36Gpa, impact strength reaches 29.2KJ/m2, can be used as hetero-junctions backing material, volume resistivity 2.7 completely
Ω·cm；After aluminum gallium nitride/gallium nitrogen layer being prepared using epitaxy on substrate, coefficient of expansion test, hetero junction layer and lining are carried out
Bottom error is less than 0.2%；There can be 5000 cm2The high electron mobility of/Vs, two-dimensional electron gas density is very high, usually reachable
1014cm2。
1.0 THz application test carried out to the device of preparation, under room temperature, photoelectric current 3.1nA, noise constant power is
185pW/Hz0.5, responsiveness 182mA/W, response time 6ps；Under liquid nitrogen, photoelectric current 3.9nA, noise constant power is
26pW/Hz0.5, responsiveness 359mA/W, response time 2ps；At 80 DEG C, photoelectric current 2.4nA, noise constant power is
275pW/Hz0.5, responsiveness 125mA/W, response time 9ps.
Above-mentioned six ammonium chloroiridate, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol, propionic acid, potassium hydroxide methanol solution, peroxide
T-butyl perbenzoate, manganese acetate, cobalt nitrate, water, triscyclopentadienyl samarium mass ratio be 15: 45: 38: 150: 80: 50: 3: 20: 30: 100:
2；Centrifugal sediment, polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 4,4- diamino phenylmethane, ethyl orthosilicate mass ratio
It is 15: 55: 5: 0.1: 40: 50；Graphene oxide, epoxy resin, acetone, glycerin monostearate, diphenyl silanediol, paraffin
Mass ratio be 5: 100: 150: 20: 30: 12；Nano powder, separation layer presoma mass ratio be 75: 100；Methanolic potassium hydroxide
The mass concentration of potassium hydroxide is 4.5% in solution；The molecular weight of the polyvinyl alcohol is 1500~2000；Separation layer presoma,
The thickness of enhancement layer presoma, supporting layer presoma in heat resistant substrates is respectively 50 microns, 500 microns, 260 microns.
Embodiment two
A kind of preparation method of terahertz wave detector, comprising the following steps:
(1) under nitrogen protection, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid are mixed；Then
Return stirring 5 minutes, potassium hydroxide methanol solution and t-butyl peroxybenzoate is then added；React natural cooling after ten minutes
To room temperature, the centrifugation of ethyl acetate coagulation is added；Resulting dispersion system in ethyl alcohol is scattered in after centrifugal sediment is washed；Then it is added
Manganese acetate, cobalt nitrate, water stir 10 minutes addition triscyclopentadienyl samariums, stir 1 hour, be supported a layer presoma；
(2) in dispersion be added polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 50 DEG C stir 1 hour, then plus
Enter 4,4- diamino phenylmethane, ethyl orthosilicate, return stirring 10 minutes, is then concentrated to get the concentrate of solid content 80%；It will
Concentrate carries out hypergravity processing；Then it is freeze-dried, obtains nano powder；The revolving speed of the hypergravity processing is 35000rpm；
The flow of concentrate is 80mL/min；
(3) by graphene oxide, epoxy resin be added acetone, return stirring be added after twenty minutes glycerin monostearate with
Diphenyl silanediol continues stirring 10 minutes, and paraffin is then added, and stirs 30 minutes, obtains separation layer presoma；
(4) nano powder is added in separation layer presoma, carbon nanotube is added in stirring after five minutes, and stirring obtains for 10 minutes
Enhancement layer presoma；
(5) separation layer presoma, enhancement layer presoma, supporting layer presoma are successively coated on the sapphire of cleaning, are obtained
To substrate；Drying at room temperature after coating every time；
(6) aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；Remove sapphire, then prepare active region mesa,
Gate medium, ohmic contact windows, electrode, to obtain terahertz wave detector.
Meanwhile the solidification to the progress 180 DEG C/1 hour of the substrate of step (5), test discovery Td reach 474 DEG C；Using outer
Prolong the race of method sky to be sintered the substrate of step (5), obtains dense conductive material, compressive strength reaches 142MPa, bending modulus
Reach 6.34Gpa, impact strength reaches 29.3KJ/m2, can be used as hetero-junctions backing material, volume resistivity 2.7 completely
Ω·cm；After aluminum gallium nitride/gallium nitrogen layer being prepared using epitaxy on substrate, coefficient of expansion test, hetero junction layer and lining are carried out
Bottom error is less than 0.2%；There can be 5000 cm2The high electron mobility of/Vs, two-dimensional electron gas density is very high, usually reachable
1014cm2。
1.0 THz application test carried out to the device of preparation, under room temperature, photoelectric current 3.0nA, noise constant power is
187pW/Hz0.5, responsiveness 181mA/W, response time 6ps；Under liquid nitrogen, photoelectric current 3.9nA, noise constant power is
28pW/Hz0.5, responsiveness 357mA/W, response time 2ps；At 80 DEG C, photoelectric current 2.4nA, noise constant power is
276pW/Hz0.5, responsiveness 123mA/W, response time 9ps.
Above-mentioned six ammonium chloroiridate, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol, propionic acid, potassium hydroxide methanol solution, peroxide
T-butyl perbenzoate, manganese acetate, cobalt nitrate, water, triscyclopentadienyl samarium mass ratio be 15: 45: 38: 150: 80: 50: 3: 20: 30: 100:
2；Centrifugal sediment, polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron, 4,4- diamino phenylmethane, ethyl orthosilicate mass ratio
It is 15: 55: 5: 0.1: 40: 50；Graphene oxide, epoxy resin, acetone, glycerin monostearate, diphenyl silanediol, paraffin
Mass ratio be 5: 100: 150: 20: 30: 12；Nano powder, separation layer presoma mass ratio be 75: 100；Methanolic potassium hydroxide
The mass concentration of potassium hydroxide is 4.5% in solution；The molecular weight of the polyvinyl alcohol is 1500~2000；Separation layer presoma,
The thickness of enhancement layer presoma, supporting layer presoma in heat resistant substrates is respectively 50 microns, 500 microns, 260 microns.
Using existing sapphire substrates, aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy；Then active region mesa, grid are prepared
Medium, ohmic contact windows, electrode carry out 1.0 THz application and test to obtain terahertz wave detector, under room temperature, photoelectricity
Stream is 2.1nA, and noise constant power is 10nW/Hz0.5, responsiveness 106mA/W, response time 12ps；Under liquid nitrogen, photoelectric current
For 2.5nA, noise constant power is 1nW/Hz0.5, responsiveness 287mA/W, response time 6ps；At 80 DEG C, photoelectric current is
1.1nA, noise constant power are 196nW/Hz0.5, responsiveness 37mA/W, response time 58ps.
Claims (7)
1. a kind of terahertz wave detector, which is characterized in that the preparation method of the terahertz wave detector the following steps are included:
(1) under nitrogen protection, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid are mixed；It is then refluxed for
Then potassium hydroxide methanol solution and t-butyl peroxybenzoate is added in stirring 5 minutes；Reaction naturally cools to room after ten minutes
The centrifugation of ethyl acetate coagulation is added in temperature；Resulting dispersion system in ethyl alcohol is scattered in after centrifugal sediment is washed；Then acetic acid is added
Manganese, cobalt nitrate, water stir 10 minutes addition triscyclopentadienyl samariums, stir 1 hour, be supported a layer presoma；
(2) polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron are added in dispersion, 50 DEG C are stirred 1 hour, 4 are then added,
4- diamino phenylmethane, ethyl orthosilicate return stirring 10 minutes, are then concentrated to get the concentrate of solid content 80%；It will concentration
Object carries out hypergravity processing；Then it is freeze-dried, obtains nano powder；The revolving speed of hypergravity processing is 35000~
40000rpm；The flow of concentrate is 80~90mL/min；
(3) acetone is added in graphene oxide, epoxy resin, glycerin monostearate and hexichol is added in return stirring after twenty minutes
Base silicon diol continues stirring 10 minutes, and paraffin is then added, and stirs 30 minutes, obtains separation layer presoma；
(4) nano powder is added in separation layer presoma, carbon nanotube is added in stirring after five minutes, and stirring is strengthened for 10 minutes
Layer presoma；
(5) separation layer presoma, enhancement layer presoma, supporting layer presoma are successively coated in heat resistant substrates, obtain substrate；Often
Drying at room temperature after secondary coating；
(6) aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；Then active region mesa, gate medium, Ohmic contact are prepared
Window, electrode, to obtain terahertz wave detector.
2. terahertz wave detector according to claim 1, which is characterized in that six ammonium chloroiridates, dioctyl tin, nine hydration nitre
The matter of sour aluminium, ethyl alcohol, propionic acid, potassium hydroxide methanol solution, t-butyl peroxybenzoate, manganese acetate, cobalt nitrate, water, triscyclopentadienyl samarium
Amount is than being 15: 45: 38: 150: 80: 50: 3: 20: 30: 100: 2；Centrifugal sediment, polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin
Iron, 4,4- diamino phenylmethane, ethyl orthosilicate mass ratio be 15: 55: 5: 0.1: 40: 50；Graphene oxide, asphalt mixtures modified by epoxy resin
Rouge, acetone, glycerin monostearate, diphenyl silanediol, paraffin mass ratio be 5: 100: 150: 20: 30: 12；Nano powder,
The mass ratio of separation layer presoma is 75: 100.
3. terahertz wave detector according to claim 1, which is characterized in that hydroxide in the potassium hydroxide methanol solution
The mass concentration of potassium is 4.5%；The molecular weight of the polyvinyl alcohol is 1500~2000.
4. terahertz wave detector according to claim 1, which is characterized in that separation layer presoma, enhancement layer presoma, branch
Supportting thickness of the layer presoma in heat resistant substrates is respectively 50 microns, 500 microns, 260 microns.
5. terahertz wave detector according to claim 1, which is characterized in that the epitaxy is metal organic-matter chemical gas
Phase epitaxy method, molecular beam epitaxy or hydride vapour phase epitaxy method.
6. a kind of THz wave detection device, which is characterized in that the preparation method of the THz wave detection device includes following
Step:
(1) under nitrogen protection, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid are mixed；It is then refluxed for
Then potassium hydroxide methanol solution and t-butyl peroxybenzoate is added in stirring 5 minutes；Reaction naturally cools to room after ten minutes
The centrifugation of ethyl acetate coagulation is added in temperature；Resulting dispersion system in ethyl alcohol is scattered in after centrifugal sediment is washed；Then acetic acid is added
Manganese, cobalt nitrate, water stir 10 minutes addition triscyclopentadienyl samariums, stir 1 hour, be supported a layer presoma；
(2) polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron are added in dispersion, 50 DEG C are stirred 1 hour, 4 are then added,
4- diamino phenylmethane, ethyl orthosilicate return stirring 10 minutes, are then concentrated to get the concentrate of solid content 80%；It will concentration
Object carries out hypergravity processing；Then it is freeze-dried, obtains nano powder；The revolving speed of hypergravity processing is 35000~
40000rpm；The flow of concentrate is 80~90mL/min；
(3) acetone is added in graphene oxide, epoxy resin, glycerin monostearate and hexichol is added in return stirring after twenty minutes
Base silicon diol continues stirring 10 minutes, and paraffin is then added, and stirs 30 minutes, obtains separation layer presoma；
(4) nano powder is added in separation layer presoma, carbon nanotube is added in stirring after five minutes, and stirring is strengthened for 10 minutes
Layer presoma；
(5) separation layer presoma, enhancement layer presoma, supporting layer presoma are successively coated in heat resistant substrates, obtain substrate；Often
Drying at room temperature after secondary coating；
(6) aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；Then active region mesa, gate medium, Ohmic contact are prepared
Window, electrode, to obtain terahertz wave detector；Terahertz wave detector is packaged, THz wave detection dress is obtained
It sets.
7. a kind of THz wave detection system, which is characterized in that the preparation method of the THz wave detection system includes following
Step:
(1) under nitrogen protection, six ammonium chloroiridates, dioctyl tin, ANN aluminium nitrate nonahydrate, ethyl alcohol and propionic acid are mixed；It is then refluxed for
Then potassium hydroxide methanol solution and t-butyl peroxybenzoate is added in stirring 5 minutes；Reaction naturally cools to room after ten minutes
The centrifugation of ethyl acetate coagulation is added in temperature；Resulting dispersion system in ethyl alcohol is scattered in after centrifugal sediment is washed；Then acetic acid is added
Manganese, cobalt nitrate, water stir 10 minutes addition triscyclopentadienyl samariums, stir 1 hour, be supported a layer presoma；
(2) polyvinyl alcohol, hydrogen peroxide, tetraphenylporphyrin iron are added in dispersion, 50 DEG C are stirred 1 hour, 4 are then added,
4- diamino phenylmethane, ethyl orthosilicate return stirring 10 minutes, are then concentrated to get the concentrate of solid content 80%；It will concentration
Object carries out hypergravity processing；Then it is freeze-dried, obtains nano powder；The revolving speed of hypergravity processing is 35000~
40000rpm；The flow of concentrate is 80~90mL/min；
(3) acetone is added in graphene oxide, epoxy resin, glycerin monostearate and hexichol is added in return stirring after twenty minutes
Base silicon diol continues stirring 10 minutes, and paraffin is then added, and stirs 30 minutes, obtains separation layer presoma；
(4) nano powder is added in separation layer presoma, carbon nanotube is added in stirring after five minutes, and stirring is strengthened for 10 minutes
Layer presoma；
(5) separation layer presoma, enhancement layer presoma, supporting layer presoma are successively coated in heat resistant substrates, obtain substrate；Often
Drying at room temperature after secondary coating；
(6) aluminum gallium nitride/gallium nitrogen layer is prepared using epitaxy on substrate；Then active region mesa, gate medium, Ohmic contact are prepared
Window, electrode, to obtain terahertz wave detector；Terahertz wave detector is packaged, THz wave detection dress is obtained
It sets；It combines THz wave detection device with bracket, computer, indicator light, obtains THz wave detection system.
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| CN109216500B (en) | 2021-08-17 |
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