CN109449242A - Based on two-dimentional two selenizing platinum nano thin-films and the heterojunction type near infrared photodetector of cadmium-telluride crystal and preparation method thereof - Google Patents
Based on two-dimentional two selenizing platinum nano thin-films and the heterojunction type near infrared photodetector of cadmium-telluride crystal and preparation method thereof Download PDFInfo
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- CN109449242A CN109449242A CN201811336880.4A CN201811336880A CN109449242A CN 109449242 A CN109449242 A CN 109449242A CN 201811336880 A CN201811336880 A CN 201811336880A CN 109449242 A CN109449242 A CN 109449242A
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 113
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 56
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 239000013078 crystal Substances 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 7
- 239000004926 polymethyl methacrylate Substances 0.000 description 7
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses based on two-dimentional two selenizing platinum nano thin-films and the heterojunction type near infrared photodetector of cadmium-telluride crystal and preparation method thereof, it is to have two-dimentional two selenizing platinum nano thin-films in the tiling of cadmium-telluride crystal surface, the metal electrode with it in Ohmic contact is respectively arranged on two-dimentional two selenizing platinum nano thin-films and cadmium-telluride crystal, cadmium telluride and two selenizing platinum form hetero-junctions, two metal electrodes as two output stages, that is, construct as heterojunction type near infrared photodetector.Heterojunction type near infrared photodetector of the invention, preparation process is simple, realizes wide response wave band, high-responsivity, high detection rate and fast-response speed at room temperature, provides a kind of approach for the design of high-performance infrared detector.
Description
Technical field
The present invention relates to a kind of heterojunction type near-infrareds constructed by two-dimentional two selenizing platinum nano thin-films and cadmium-telluride crystal
Photodetector and preparation method thereof belongs to technical field of photoelectric detection.
Background technique
In recent years, due to its national defence and Military Application, industrial automation, environmental monitoring and in terms of weight
It is worth, many researchers are dedicated to developing novel high-performance infrared photoelectric detector.Currently, most of business infrared electros
Detector is generally made of certain narrow gap semiconductors such as indium gallium arsenic, mercury cadmium telluride etc..But these photodetectors application by
The limitation of the preparation process, high cost and low-temperature operation condition complicated to it.Compared with traditional bulk semiconductor material, two dimension
Material is more suitable for preparing photodetector: firstly, the wide spectrum response of two-dimensional material can be design work at different wavelengths
The photodetector of work provides greater flexibility；Secondly, the free dangling bond on two-dimensional material surface allows they and its
He combines semiconductor, overcomes the limitation of lattice；Third, it is red that the strong stimulative substance interaction of two-dimensional material provides small designization
A possibility that outer photodetector, this is difficult to realize in traditional infrared photoelectric detector based on bulk semiconductor.In view of
Above-mentioned advantage, two-dimensional material provide ideal design platform for the preparation of high-performance infrared photoelectric detector.
Two selenizing platinum (PtSe of two-dimensional layer2) film is with excellent electricity and photoelectric properties, with high carrier migration
Rate and layer dependence band gap.The single layer band gap of two selenizing platinum films is 1.2eV, the double-deck band gap is 0.21eV, with the increasing of the number of plies
Add, PtSe2Film will become semimetal.This unique PtSe2It is infrared that the broad-band gap range of film becomes design broadband
The ideal chose of photodetector.However, the ultrathin of two-dimensional layer material will lead to the low absorption to incident light, cause small
Photoelectric current, big dark current and low specific detecivity.It therefore, perhaps can be with by two selenizing platinum film heterojunction structures of building
Further enhance its photodetection performance.
Summary of the invention
The present invention be in order to avoid above-mentioned existing deficiencies in the technology, provide a kind of simple process, be suitble to it is big
Large-scale production, reliable and stable, the outer photodetector of the faster heterojunction type of detection response speed and preparation method thereof, to promote two
Tie up application of the two selenizing platinum films in high-performance infrared photoelectric detector.
The present invention is to realize goal of the invention, is adopted the following technical scheme that
The present invention discloses the heterojunction type near-infrared based on two-dimentional two selenizing platinum nano thin-films and cadmium-telluride crystal first
Photodetector, it is characterized in that:
The heterojunction type near infrared photodetector is that the partial region tiling on cadmium-telluride crystal surface has two dimension
Two selenizing platinum nano thin-films；It is provided on the two-dimentional two selenizings platinum nano thin-film and the two-dimentional two selenizings platinum nano thin-film
In the first metal electrode of Ohmic contact, it is provided on the cadmium-telluride crystal with the cadmium-telluride crystal in Ohmic contact
(the two does not contact) is arranged with the two-dimentional two selenizings platinum nano thin-film interval in second metal electrode, second metal electrode；
Hetero-junctions is formed between the cadmium-telluride crystal and two-dimentional two selenizing platinum nano thin-films, and with the first metal electricity
Pole and second metal electrode are constructed as two output stages as heterojunction type near infrared photodetector.
Further, the conduction type of the cadmium-telluride crystal is p-type, resistivity is 1 × 103-1×107Ω·cm-1。
Further, the thickness of the two-dimentional selenizing platinum nano thin-film is in 0.52~100 nanometer range.
Further, first metal electrode and second metal electrode be independently selected from be gold, silver, platinum,
Aluminium, copper or titanium.
The invention also discloses the preparation methods of above-mentioned heterojunction type near infrared photodetector, it is characterized in that: firstly,
Two-dimentional two selenizing platinum nano thin-films are prepared using magnetron sputtering technique and chemical vapor deposition method；Then by two-dimentional two selenium of gained
Change platinum nano thin-film and is transferred to cadmium-telluride crystal surface；Finally again by thermal evaporation or electron beam film plating process in two-dimentional two selenizings
The first metal electrode is prepared on platinum nano thin-film, prepares the second metal electrode on cadmium-telluride crystal, i.e. completion heterojunction type is close
The preparation of infrared photoelectric detector.
Further, two-dimentional two selenizing platinum nano thin-films are prepared using magnetron sputtering technique and chemical vapor deposition method
Method are as follows:
(1) it is thin that one layer of metal platinum is prepared on the silicon or silicon oxide substrate cleaned up using magnetic-controlled sputtering coating equipment
Film, with a thickness of 1-50 nanometers；
(2) substrate for being coated with platinum film is put into tube furnace, while is put into selenium powder, and interior vacuum state will be managed；
(3) it is passed through argon gas into pipe, is then heated to 450-500 DEG C, keeps the temperature 1-3 hours, that is, obtains two-dimentional two selenium
Change platinum nano thin-film.
Further, two selenizing platinum nano thin-films of two dimension are transferred to the method on cadmium-telluride crystal are as follows:
(1) polymethyl methacrylate is dissolved in methyl phenyl ethers anisole, is made into the solution of 50mg/mL, then added at 50~60 DEG C
Heat is completely dissolved polymethyl methacrylate；
(2) one layer of polymethyl methacrylate solution of spin coating on the substrate that growth has two-dimentional two selenizing platinum nano thin-films；
(3) sample for being coated with polymethyl methacrylate solution is put into the KOH solution of 1mol/L, after 1-24 hours,
The film stripped down is transferred in deionized water and is cleaned, is then transferred on cadmium-telluride crystal, dry, then with acetone,
Deionized water is rinsed, and is finally dried.
Compared with the prior art, the beneficial effects of the present invention are embodied in:
The present invention by a kind of simple process, low-cost method be prepared for based on two-dimentional two selenizing platinum nano thin-films with
The hetero-junctions infrared photoelectric detector of cadmium-telluride crystal, the detector have significantly in 200-2000 nanometers of wave-length coverage
Photoresponse, and have higher specific detecivity, responsiveness and fast speed of detection at room temperature.
Detailed description of the invention
Fig. 1 is that the present invention is based on the heterojunction type near infrared light electrical resistivity surveys of two-dimentional two selenizing platinum nano thin-films and cadmium-telluride crystal
Survey the structural schematic diagram of device, figure label: 1 is cadmium-telluride crystal, and 2 be two-dimentional two selenizing platinum nano thin-films, and 3 be the first metal electricity
Pole, 4 be the second metal electrode.
Fig. 2 is the atomic force microscopy diagram of two selenizing platinum nano thin-films, and measured film thickness is 21.9 nanometers.
Fig. 3 be based on heterojunction type photoelectric detector prepared in embodiment 1 under dark and in Compound eye
Under current -voltage curve.
Fig. 4 be based on heterojunction type photoelectric detector prepared in embodiment 1 780 nano wave length -5V, -10V, -
Photoresponse-time graph under 15V, -20V voltage.
Fig. 5 is that the photoresponse based on heterojunction type photoelectric detector prepared in embodiment 1 under 200 nano wave lengths is bent
Line.
Fig. 6 is the photoresponse based on heterojunction type photoelectric detector prepared in embodiment 1 under 2000 nano wave lengths
Curve.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below with reference to embodiment to this hair
Bright specific embodiment is described in detail.The following contents is only to design example of the invention and explanation, institute
Belong to those skilled in the art to make various modifications or additions to the described embodiments or using similar
Mode substitutes, and as long as it does not deviate from the concept of invention or beyond the scope defined by this claim, should belong to the present invention
Protection scope.
Embodiment 1
Referring to Fig. 1, heterojunction type near-infrared of the present embodiment based on two-dimentional two selenizing platinum nano thin-films and cadmium-telluride crystal
Photodetector has the following structure: the partial region tiling on 1 surface of cadmium-telluride crystal has two-dimentional two selenizing platinum nano thin-films
2；The first metal with two-dimentional two selenizing platinum nano thin-films 2 in Ohmic contact is provided on two-dimentional two selenizing platinum nano thin-films 2
Electrode 3 is provided with the second metal electrode 4 with cadmium-telluride crystal 1 in Ohmic contact, the second metal electricity on cadmium-telluride crystal 1
(the two does not contact) is arranged with two-dimentional two selenizing platinum nano thin-films 2 interval in pole 4；
Hetero-junctions is formed between cadmium-telluride crystal 1 and two-dimentional two selenizing platinum nano thin-films 2, and with 3 He of the first metal electrode
Second metal electrode 4 is used as two output stages, constructs as heterojunction type near infrared photodetector.
The preparation method of the present embodiment heterojunction type near infrared photodetector, includes the following steps:
1, two-dimentional two selenizing platinum nano thin-films are prepared using magnetron sputtering technique and chemical vapor deposition method:
(1) one layer of metal platinum film, thickness are prepared on cleaning up silicon oxide substrate using magnetic-controlled sputtering coating equipment
It is 15 nanometers；
(2) substrate for being coated with platinum film is put into tube furnace, while is put into selenium powder, and interior vacuum state will be managed；
(3) it is passed through argon gas into pipe, is then heated to 450 DEG C, keeps the temperature 1 hour, that is, obtains two-dimentional two selenizing platinum and receives
Rice film.
Fig. 2 is the atomic force microscopy diagram of two selenizing platinum nano thin-films, and measured film thickness is 21.9 nanometers.
2, two-dimentional selenizing platinum nano thin-film is transferred on cadmium-telluride crystal:
(1) polymethyl methacrylate is dissolved in methyl phenyl ethers anisole, is made into the solution of 50mg/mL, then heated, make at 55 DEG C
Polymethyl methacrylate is completely dissolved；
(2) one strata methyl methacrylate of spin coating is molten on the oxidized silicon chip that growth has two-dimentional two selenizing platinum nano thin-films
Liquid；
(3) sample for being coated with polymethyl methacrylate solution is put into the KOH solution of 1mol/L, after 15 hours,
The film stripped down, which is transferred in deionized water, to be cleaned, and is then transferred on cadmium-telluride crystal, drying, then with acetone, go
Ionized water rinses, and finally dries.
3, the gold electricity of 50 nanometer thickness is prepared on two-dimentional two selenizing platinum film surfaces and cadmium-telluride crystal surface by thermal evaporation
The preparation of heterojunction type near infrared photodetector is completed as the first metal electrode and the second metal electrode in pole.
Based on heterojunction type near infrared photodetector manufactured in the present embodiment in the dark with surveyed under Compound eye
The electric current and voltage curve obtained is as shown in figure 3, detector has apparent response to light as seen from the figure.
Based on the present embodiment prepare heterojunction type near infrared photodetector 780 nano wave length -5V, -10V, -15V, -
Relation curve at any time is converted to photoswitch under 20V voltage as shown in figure 4, as can be seen from the figure detector has cracking sound
Answer speed and stability.
Light based on heterojunction type near infrared photodetector manufactured in the present embodiment under 200 nanometers and 2000 nanometers is rung
Answer-time graph is as shown in Figure 5 and Figure 6, as can be seen from the figure detector has wide spectral response range.
Claims (5)
1. based on the heterojunction type near infrared photodetector of two-dimentional two selenizing platinum nano thin-films and cadmium-telluride crystal, feature exists
In:
The heterojunction type near infrared photodetector is that the partial region tiling on cadmium-telluride crystal (1) surface has two dimension two
Selenizing platinum nano thin-film (2)；It is provided on the two-dimentional two selenizings platinum nano thin-film (2) and the two-dimentional two selenizings platinum nanometer
Film (2) is in the first metal electrode (3) of Ohmic contact, is provided on the cadmium-telluride crystal (1) brilliant with the cadmium telluride
Body (1) is in the second metal electrode (4) of Ohmic contact, second metal electrode (4) and the two-dimentional selenizing platinum nano thin-film
(2) interval setting；
Hetero-junctions is formed between the cadmium-telluride crystal (1) and two-dimentional two selenizing platinum nano thin-films (2), and with first metal
Electrode (3) and second metal electrode (4) are used as two output stages, construct as heterojunction type near infrared photodetector.
2. heterojunction type near infrared photodetector according to claim 1, it is characterised in that: the cadmium-telluride crystal
(1) conduction type is p-type, resistivity is 1 × 103-1×107Ω·cm-1。
3. heterojunction type near infrared photodetector according to claim 1, it is characterised in that: the two-dimentional two selenizings platinum
The thickness of nano thin-film (2) is in 0.52~100 nanometer range.
4. heterojunction type near infrared photodetector according to claim 1, it is characterised in that: first metal electrode
(3) being independently selected from second metal electrode (4) is gold, silver, platinum, aluminium, copper or titanium.
5. the preparation method of heterojunction type near infrared photodetector described in a kind of any one of Claims 1 to 4, special
Sign is:
Firstly, preparing two-dimentional two selenizing platinum nano thin-films using magnetron sputtering technique and chemical vapor deposition method；Then by institute
It obtains two-dimentional selenizing platinum nano thin-film and is transferred to cadmium-telluride crystal surface；Finally again by thermal evaporation or electron beam film plating process two
It ties up and prepares the first metal electrode on two selenizing platinum nano thin-films, prepare the second metal electrode on cadmium-telluride crystal, that is, complete different
The preparation of matter junction type near infrared photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811336880.4A CN109449242A (en) | 2018-11-12 | 2018-11-12 | Based on two-dimentional two selenizing platinum nano thin-films and the heterojunction type near infrared photodetector of cadmium-telluride crystal and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811336880.4A CN109449242A (en) | 2018-11-12 | 2018-11-12 | Based on two-dimentional two selenizing platinum nano thin-films and the heterojunction type near infrared photodetector of cadmium-telluride crystal and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797432A (en) * | 2019-11-18 | 2020-02-14 | 中国科学院上海技术物理研究所 | Room-temperature ultra-short channel platinum selenide terahertz detector and preparation method thereof |
| CN112563400A (en) * | 2021-02-20 | 2021-03-26 | 南京卓永创光电科技有限公司 | Photothermal detector based on bismuth diselenide telluride and preparation method thereof |
| CN114420784A (en) * | 2021-11-29 | 2022-04-29 | 浙江大学 | Heterojunction structure and photoelectric detector based on platinum diselenide and silicon, and preparation method thereof |
-
2018
- 2018-11-12 CN CN201811336880.4A patent/CN109449242A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| WU DI等: "Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector", 《ACS PHOTONICS》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797432A (en) * | 2019-11-18 | 2020-02-14 | 中国科学院上海技术物理研究所 | Room-temperature ultra-short channel platinum selenide terahertz detector and preparation method thereof |
| CN112563400A (en) * | 2021-02-20 | 2021-03-26 | 南京卓永创光电科技有限公司 | Photothermal detector based on bismuth diselenide telluride and preparation method thereof |
| CN112563400B (en) * | 2021-02-20 | 2021-05-07 | 南京卓永创光电科技有限公司 | Photo-thermal detector based on platinum diselenide-bismuth telluride and preparation method thereof |
| CN114420784A (en) * | 2021-11-29 | 2022-04-29 | 浙江大学 | Heterojunction structure and photoelectric detector based on platinum diselenide and silicon, and preparation method thereof |
| CN114420784B (en) * | 2021-11-29 | 2023-10-10 | 浙江大学 | Heterojunction structure based on platinum diselenide and silicon, photoelectric detector and preparation method thereof |
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