CN106486541B - A kind of regulation method of indium oxide nanometer fiber field effect transistor electric property - Google Patents
A kind of regulation method of indium oxide nanometer fiber field effect transistor electric property Download PDFInfo
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- CN106486541B CN106486541B CN201610935487.1A CN201610935487A CN106486541B CN 106486541 B CN106486541 B CN 106486541B CN 201610935487 A CN201610935487 A CN 201610935487A CN 106486541 B CN106486541 B CN 106486541B
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000005669 field effect Effects 0.000 title claims abstract description 20
- 239000000835 fiber Substances 0.000 title claims abstract description 10
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 6
- 238000010041 electrostatic spinning Methods 0.000 claims abstract description 49
- 238000002360 preparation method Methods 0.000 claims abstract description 19
- 239000011777 magnesium Substances 0.000 claims description 48
- 239000002243 precursor Substances 0.000 claims description 35
- 229910052749 magnesium Inorganic materials 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 13
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 13
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 7
- 238000009987 spinning Methods 0.000 claims description 7
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 5
- 238000003760 magnetic stirring Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229940050906 magnesium chloride hexahydrate Drugs 0.000 claims description 2
- DHRRIBDTHFBPNG-UHFFFAOYSA-L magnesium dichloride hexahydrate Chemical compound O.O.O.O.O.O.[Mg+2].[Cl-].[Cl-] DHRRIBDTHFBPNG-UHFFFAOYSA-L 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- UKCIUOYPDVLQFW-UHFFFAOYSA-K indium(3+);trichloride;tetrahydrate Chemical compound O.O.O.O.Cl[In](Cl)Cl UKCIUOYPDVLQFW-UHFFFAOYSA-K 0.000 claims 1
- 239000002121 nanofiber Substances 0.000 abstract description 38
- 230000005611 electricity Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 37
- 238000002474 experimental method Methods 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 15
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 14
- 239000011521 glass Substances 0.000 description 14
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000002070 nanowire Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052735 hafnium Inorganic materials 0.000 description 7
- 229910052706 scandium Inorganic materials 0.000 description 7
- 229910052712 strontium Inorganic materials 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 229910052726 zirconium Inorganic materials 0.000 description 7
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052727 yttrium Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910007486 ZnGa2O4 Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- ANCMJQAPMSHZOQ-UHFFFAOYSA-N O.O.O.O.[In] Chemical compound O.O.O.O.[In] ANCMJQAPMSHZOQ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000005501 phase interface Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000006250 one-dimensional material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910002001 transition metal nitrate Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F1/00—General methods for the manufacture of artificial filaments or the like
- D01F1/02—Addition of substances to the spinning solution or to the melt
- D01F1/10—Other agents for modifying properties
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Textile Engineering (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to transistor electricity performance control technique fields, are related to a kind of regulation method of indium oxide nanometer fiber field effect transistor electric property, prepare In by easy, cheap electrostatic spinning technique2O3Nanofiber, and metal-doped regulate and control In by simple and easy2O3The electric property of nanofiber field effect transistor reaches easy, regulates and controls In efficiently at low cost2O3The electric properties such as threshold voltage, off-state current, the on-off ratio of nanofiber field effect transistor obtain the metal-doped In of function admirable2O3Nanofiber field effect transistor；Its preparation process handy and safe, principle is reliable, and production cost is low, prepared In2O3Nanofiber and metal-doped In2O3Nanofiber has broad application prospects in fields such as electronic switching device, display, biology and chemical sensors, is easy to carry out large-scale industrial production.
Description
Technical field:
The invention belongs to transistor electricity performance control technique fields, are related to a kind of indium oxide nanometer fiber field effect transistor
Manage (In2O3NFFETs) the regulation method of electric property utilizes Main Group Metal Elements (Mg, Al, Ga) or transition metal (Y, Sr, Sc
Deng) element carries out simple doping and regulate and control In2O3NFFETs electric property can be widely used in Performance Monitor, photoelectron device
The fields such as part, detector, rectifier.
Background technique:
Compared to bulk and thin-film material, one dimension semiconductor material is due to having the electron-transport path, lower of orientation
The advantages that material cost, big specific surface area, excellent mechanical performance, the photoelectricity performance of device can be effectively improved.Mesh
Before, the method for preparing one-dimensional material mainly have chemical vapour deposition technique (CVD), thermal evaporation, electron beam evaporation method, hydro-thermal method and
Method of electrostatic spinning etc., wherein method of electrostatic spinning prepare semiconductor nano fiber with flexible design, it is low in cost, easy to operate,
The advantages that yield is high and is suitable for large-size device, principle be electropolymer drop under the active force of electric field in capillary
Taylor's conical point it is accelerated, when electric field force is sufficiently large, polymer drop can overcome surface tension to form injection thread, thread
It is stretched in course of injection, and evaporates or solidify along with solvent, finally fall on the reception device, obtain nano wire or nanometer
Fiber.
Metal-oxide semiconductor (MOS) nanofiber especially In2O3Nanofiber (In2O3NFs) due to having suitable prohibit
Bandwidth, biggish carrier concentration, higher electron mobility and excellent chemical stability, cause people and widely close
Note and research, but In2O3Carrier concentration with higher in NFs, therefore with In2O3NFs is the FET of semiconductor layer preparation
With negative threshold voltage, higher off-state current (10-7), minimum on-off ratio (103) the disadvantages of.Many research teams are to this
Problem is made that very big effort, for example, Liao etc. using chemical vapour deposition technique (CVD) successfully prepare it is metal-doped
In2O3Nano-wire fet compensates the Lacking oxygen of nano wire by the doping of metal, so that the carrier reduced in nano wire is dense
Degree, finally obtained enhanced nano-wire field effect transistor (X.M.Zou, J.L.Wang, X.Q.Liu, etal.,
Controllable Electrical Properties of Metal-Doped In2O3Nanowires for High-
Performance Enhancement Mode Transistors,ACSNANO,7,804-810(2013))；Choi etc. is utilized
Method of electrostatic spinning is prepared for In2O3-ZnO-ZnGa2O4Composite nano fiber, due to ZnGa2O4It, can be effective with high impedance
The transmission of regulation carrier has suitable on-state current, threshold voltage and switch to reach regulation composite nano fiber FET
Than having obtained the high-performance In of low voltage operating2O3-ZnO-ZnGa2O4Composite nano fiber field effect transistor (Low
Voltage Operating FieldEffect Transistors with Composite In2O3-ZnO-
ZnGa2O4Nanofiber Network as ActiveChannel Layer, ACSNANO, 8,2318-2327 (2014)).But
It is there is not yet preparing metal-doped polycrystalline In using method of electrostatic spinning2O3Semiconductor nano fiber, and by changing doping
Metal species and content realize the relevant report regulated and controled to its electric property.
Summary of the invention:
It is an object of the invention to overcome disadvantage of the existing technology, seek design a kind of indium oxide semiconductor be provided to receive
The regulation method of rice fiber field effect transistor electric property prepares In by easy, cheap electrostatic spinning technique2O3Nanometer
Fiber, and metal-doped regulate and control In by simple and easy2O3The electric property of NFs FET reaches easy, efficient, low cost
Ground regulates and controls In2O3The electric properties such as threshold voltage, off-state current, the on-off ratio of NFs FET obtain the metal-doped of function admirable
In2O3NFsFET。
To achieve the goals above, specific process step of the invention includes:
(1) preparation of electrostatic spinning precursor solution: by 6-8g polyvinylpyrrolidone (PVP), 0.8-1.6g tri-chlorination
Indium tetrahydrate and 40g n,N-Dimethylformamide (DMF) mixing are stirred well to loaded in vial with magnetic stirring apparatus
Solution transparent and homogeneous forms the electrostatic spinning precursor solution in the pure source In；
(2) preparation of electrostatic spinning precursor solution is adulterated: by major element or the corresponding chlorate of transition metal element
Or nitrate 0.8-0.16g is dissolved in the electrostatic spinning precursor solution in the pure source In of step (1) preparation, is formed metallic element and is mixed
The miscellaneous doping electrostatic spinning precursor solution than being 1-15wt%；
(3)In2O3The preparation of NFs and the assembling of device: extraction step (1) or the prepared solution 5ml of step (2) pass through
Existing electrostatic spinning technique is by the electrostatic spinning precursor solution in the pure source In or doping electrostatic spinning precursor solution spinning in table
Face covers 150-300nm SiO2In is prepared on the silicon wafer or ITO or FTO electro-conductive glass of dielectric layer2O3Nanofiber
(In2O3) or metal-doped In NFs2O3Nanofiber (In2O3NFs), wherein electrostatic spinning voltage is 10-25kv, humidity 20-
50%, needle point to the distance 10-20cm received between substrate, before the electrostatic spinning precursor solution in the pure source In or doping electrostatic spinning
The fltting speed for driving liquid solution is 0.5-1ml/h；Then it will obtain with In2O3Nanofiber (In2O3NFs) or metal is mixed
Miscellaneous In2O3Nanofiber (In2O3NFs silicon wafer or electro-conductive glass) is put into roasting glue platform baking 10-60min, ultraviolet radiator annealing
20-60min, then silicon wafer or electro-conductive glass are put into 400-600 DEG C of annealing 1-3h of Muffle furnace, it is taken out after cooled to room temperature,
One layer of 50-200nmAl film is finally deposited as source, leakage on silicon wafer or electro-conductive glass using thermal evaporation method using mask plate
Electrode, and the 30-90min that anneals in 200-300 DEG C of nitrogen atmosphere, are prepared In2O3Nanofiber field effect transistor
(In2O3) or metal-doped In NFFETs2O3Nanofiber field effect transistor；
(4) the metal-doped In of ordered arrangement2O3The preparation of NFs and device assembling: using homemade during electrostatic spinning
Substrate is received, the metal-doped In of ordered arrangement is obtained using bipolar electrode collecting method2O3Then NFs covers 150-300nm with surface
SiO2The silicon wafer or ITO or FTO electro-conductive glass of dielectric layer collect orderly metal-doped In2O3NFs carries out device and assembles to obtain orderly
Arrange metal-doped In2O3Nanofiber field effect transistor, experiment condition are identical as step (3).
Major element of the present invention includes Mg, Al, Ga, and transition metal element includes Y, Sr, Sc, Zr, Hf, W, Ti.
Step (4) the homemade reception substrate of the present invention refers to that receiving two pieces of the upper surface of substrate placement in step (3) puts down
Capable silicon, aluminium, copper, tungsten or nickel, parallel pole position is according to In2O3Nanofiber ejection position and required rea adjusting, self-control connect
The length for receiving substrate is 1-10cm, width 1-10cm.
The operation principle of the present invention is that: the Main Group Metal Elements (Mg, Ga, Al) and transiting group metal elements of selection (Y, Sr,
Sc, Zr, Hf, W, Ti) InXO can be formed in conjunction with In, OyCompound, InXOyPhase and In2O3Phase interface, phase boundary are formed between phase
Face has the function of being similar to crystal boundary have special interface energy, can effectively regulate and control the transmission of electronics, to reduce OFF state
Electric current；Lacking oxygen can be compensated additionally by the doping of metal, to reduce carrier concentration, reaches regulation In2O3Nanofiber
The purpose of electric property.Therefore, pass through the doping of metallic element, so that it may simply, efficiently regulate and control In2O3Nanofiber field effect
Answer the performances such as the threshold voltage, off-state current, on-off ratio of transistor.Also, by preparing the metal-doped of ordered arrangement
In2O3NFs, the excellent metal-doped In of final availability2O3NFFETs。
The present invention is compared with existing nanofiber technology of preparing, electrostatic spinning technique employed in the present invention
In2O3NFs, preparation process handy and safe, principle is reliable, and production cost is low, prepared In2O3NFs and metal-doped
In2O3NFs has broad application prospects in fields such as electronic switching device, display, biology and chemical sensors, be easy into
Row large-scale industrial production.
Detailed description of the invention:
Fig. 1 is the In of 1%-Mg doping prepared by the embodiment of the present invention 32O3The SEM picture of NFs annealing front and back, wherein (a)
For the In of 1%-Mg doping2O3SEM picture before NFs annealing, (b) In of 1%-Mg doping2O3SEM picture after NFs annealing,
The experimental results showed that the In before annealing2O3The surface NFs smoother, average diameter is after 300-400nm or so, annealing
In2O3The surface NFs is relatively rough, and due to polymer Polyvinylpyrrolidone (PVP) decomposition after annealing so that
In2O3NFs diameter is decreased obviously, the In after annealing2O3NFs average diameter 50-100nm.
Fig. 2 is the In of 2%-Mg doping prepared by the embodiment of the present invention 22O3The transmission electron microscope picture (a) of NFs dark field and
Corresponding EDS element In (b), Mg (c), O (d) picture, In, Mg, O element are uniformly distributed in nanofiber.
Fig. 3 is In prepared by the embodiment of the present invention 12O3The curve of output (a) and transfer curve (b) of NFFETs, as a result shows
Show, the In not adulterated2O3Although NFFETs has the property of apparent FET, its off-state current is up to 10-7A, on-off ratio
Only 103, and there is biggish negative threshold voltage (- 18V), property is poor, and reason is mainly due to In2O3Carrier in NFs
Concentration is higher, is difficult to regulate and control its off-state current, and prepared device is caused to have biggish off-state current.
Fig. 4 is the In of 1%-Mg doping prepared by the embodiment of the present invention 32O3The curve of output (a) and transfer curve of NFFETs
(b), with Fig. 3 comparative illustration, by In2O3NFs carries out simple Mg doping, and prepared FET's still has biggish ON state
Electric current (is only reduced to 8 × 105), off-state current has dropped 4 orders of magnitude, and about 10-11A, on-off ratio are up to 8 × 106, threshold value
Voltage has very big application potential, passes through easy-to-use Mg element doping, In in 2V or so2O3NFs FET electric property
Good regulation is obtained, principle is, on the one hand controls crystal boundary in nanofiber by adjusting the doping concentration of Mg
Quantity, crystal boundary play the role of electron-transport；On the other hand, by the doping of Mg, can compensate for Lacking oxygen reduces carrier
Concentration, thus reach regulation In2O3The purpose of carrier concentration in NFs obtains high performance Mg doping In2O3NFFETs。
Fig. 5 is the In of orderly Mg doping prepared by the present invention2O3The optical microscope picture (a) and SEM picture (b) of NFs,
Illustrate the Mg doping In that large area high-sequential can be obtained by homemade collection device2O3NFs。
Fig. 6 is the In of orderly 1%-Mg doping prepared by the embodiment of the present invention 102O3The curve of output (a) of NFFETs and turn
It moves curve (b), with Fig. 4 comparative illustration, the In of orderly Mg doping2O3The output of NFFETs and transfer property were obtained and were significantly mentioned
Height, on-state current improve 10 times, and on-off ratio improves 10 times, and threshold voltage is in 2v or so.
Specific embodiment:
It is described further by way of example and in conjunction with the accompanying drawings.
Present embodiments provide the channel material (In of a kind of couple of NFFETs2O3NFs) carry out Main Group Metal Elements (Mg, Al,
Ga) it is related to the method simply adulterated of transiting group metal elements (Y, Sr, Sc, Zr, Hf, W, Ti), concrete technology in the quiet of pure In
Electrospun precursor solution mixes Main Group Metal Elements (Mg) and transiting group metal elements (Y, Sr, Sc, Zr, Hf, W, Ti) are corresponding
Chlorate or nitrate formed doping electrostatic spinning precursor solution, prepared by electrostatic spinning technique metal-doped
In2O3NFFETs, since above-mentioned metallic element can form InXO in conjunction with In, OyCompound, InXOyPhase and In2O3Shape between phase
At phase interface, phase interface has the function of being similar to crystal boundary, with special interface energy, can effectively regulate and control the biography of electronics
It is defeated；On the other hand Lacking oxygen can be compensated by doping reduces the concentration of carrier, to reach regulation In2O3NFs FET's
The purpose of the electric properties such as threshold voltage, off-state current, on-off ratio.
The semiconductor nano fiber studied in the present embodiment includes: In2O3、InXOy(X=Mg, Al, Ga, Y, Sr, Sc,
Zr,Hf,W,Ti)；Semiconductor nano fiber is prepared using electrostatic spinning technique, and principle is the polymer drop of electrification in electricity
Accelerated in Taylor's conical point of capillary under the action of field force, when electric field force is sufficiently large, polymer drop can overcome surface
Tension forms injection thread, and thread is stretched in course of injection, and evaporates or solidify along with solvent, finally falls in reception dress
It sets, obtains nano wire or nanofiber, the present embodiment realizes for the first time prepares metal-doped In using electrostatic spinning2O3Half
The combination of conductor nanofiber and field effect transistor (FET), Fig. 1 (a), (b) show to be used in this experiment respectively
The In of 1%-Mg doping2O3SEM picture before NFs annealing and after annealing, shows that Nanowire Quality used in the present invention compares
It is good, the In before annealing2O3The surface NFs smoother, distribution of SMD is between 300-400nm, In after annealing2O3NFs's is straight
Diameter is relatively uniform, and average diameter is between 50-100nm, In2O3NFs and doping In2O3The preparation of NFs and FET assemble specific
Processing step includes:
(1) preparation of electrostatic spinning precursor solution: by 6-8g polyvinylpyrrolidone (PVP), 0.8-1.6g tri-chlorination
Indium tetrahydrate and 40g n,N-Dimethylformamide (DMF) mixing are stirred well to loaded in vial with magnetic stirring apparatus
Solution transparent and homogeneous forms the electrostatic spinning precursor solution in the pure source In；
(2) adulterate the preparation of electrostatic spinning precursor solution: by major element (Mg, Al, Ga) or transition metal element (Y,
Sr, Sc, Zr, Hf, W, Ti) corresponding chlorate or nitrate 0.8-0.16g be dissolved in step (1) preparation the pure source In Static Spinning
In silk precursor solution, metallic element doping is formed than the doping electrostatic spinning precursor solution for 1-15wt%；
(3)In2O3The preparation of NFs and the assembling of device: extraction step (1) or the prepared solution 5ml of step (2) pass through
(voltage 10-25kv, humidity 20-50%, needle point push away existing electrostatic spinning technique to the distance 10-20cm received between substrate, solution
Into speed 0.5-1ml/h) by the electrostatic spinning precursor solution in the pure source In or doping electrostatic spinning precursor solution spinning in table
Face covers 150-300nm SiO2In is prepared on the silicon wafer or ITO or FTO electro-conductive glass of dielectric layer2O3Nanofiber
(In2O3) or metal-doped In NFs2O3Nanofiber (In2O3NFs), then will obtain with In2O3Nanofiber
(In2O3) or metal-doped In NFs2O3Nanofiber (In2O3NFs silicon wafer or electro-conductive glass) is put into roasting glue platform baking 10-
60min, ultraviolet radiator annealing 20-60min, then silicon wafer or electro-conductive glass are put into 400-600 DEG C of annealing 1-3h of Muffle furnace, it is natural
It is taken out after being cooled to room temperature, one layer of 50- is finally deposited on silicon wafer or electro-conductive glass using thermal evaporation method using mask plate
200nmAl film is as source, drain electrode, and the 30-90min that anneals in 200-300 DEG C of nitrogen atmosphere, and In is prepared2O3Nanometer
Fiber field effect transistor (In2O3) or metal-doped In NFFETs2O3Nanofiber field effect transistor；
(4) the metal-doped In of ordered arrangement2O3The preparation of NFs and device assembling: using homemade during electrostatic spinning
Substrate is received (to receive the upper surface of substrate in step (3) and place two pieces of parallel silicon, aluminium, copper, tungsten, nickel electrodes, parallel pole position
Can be according to fiber ejection position and required rea adjusting: length 1-10cm, width 1-10cm, i.e. bipolar electrode collecting method), had
Sequence arranges metal-doped In2O3Then NFs covers 150-300nm SiO with surface2The silicon wafer or ITO or FTO of dielectric layer are conductive
Glass collects orderly metal-doped In2O3NFs carries out device and assembles to obtain the metal-doped In of ordered arrangement2O3Nanofiber field effect
Transistor is answered, experiment condition is identical as step (3).
Embodiment 1:
The present embodiment prepares In2O3The detailed process of NFFETs are as follows:
(1) it prepares electrostatic spinning precursor solution: 6g polyvinylpyrrolidone (PVP), 0.8g indium trichloride four is hydrated
Object, 40gN, dinethylformamide (DMF) are mixed in vial, are stirred well to solution transparent and homogeneous with magnetic stirring apparatus,
Form the pure source In electrostatic spinning precursor solution；
(2) assembling of device: the pure source the In electrostatic spinning precursor solution 5ml that extraction step (1) is prepared passes through Static Spinning
Silk technology (voltage 10-25kv, humidity 20-50%, needle point to the distance 10-20cm, solution fltting speed 0.5- received between substrate
1ml/h), the pure source In electrostatic spinning precursor solution is spinned and covers 150-300nm SiO on surface2The silicon wafer of dielectric layer or
In is obtained on ITO or FTO electro-conductive glass2O3Then NFs will have In2O3The silicon wafer or electro-conductive glass of NFs is sequentially placed into roasting glue
Platform toasts 10-60min, UV lamp annealing 20-60min, and silicon wafer or electro-conductive glass are then put into 400-600 DEG C of annealing 1- of Muffle furnace
3h takes out after cooled to room temperature, one layer of 50-200nmAl film conduct is deposited on silicon wafer finally by thermal evaporation method
Source, drain electrode, and the 30-90min that anneals in 200-300 DEG C of nitrogen atmosphere, obtain In2O3NFFETs；Experiment shows pure
In2O3NFFETs has poor electrical properties, and Fig. 3 is In manufactured in the present embodiment2O3(a) output and (b) transfer of NFFETs
Curve shows the In not adulterated2O3Although NFFETs has the property of apparent FET, the property of itself and general FET
It is higher compared to off-state current by (10-7A), on-off ratio very little (103), there is biggish negative threshold voltage (- 18v).
Embodiment 2:
The present embodiment prepares the In of 2%-Mg doping2O3The detailed process of NFs and NFFETs are as follows:
(1) it prepares electrostatic spinning precursor solution: 6g polyvinylpyrrolidone (PVP), 0.8g indium trichloride four is hydrated
Object, 40gN, dinethylformamide (DMF) are mixed in vial, are stirred well to solution transparent and homogeneous with magnetic stirring apparatus,
Form the pure source In；Electrostatic spinning precursor solution；
(2) adulterate electrostatic spinning precursor solution preparation: take magnesium chloride hexahydrate 0.016g be dissolved in step 1 configured it is pure
In the electrostatic spinning precursor solution in the source In, Mg doping is formed than the doping electrostatic spinning precursor solution for 2wt%；
(3) assembling of device: the prepared doping electrostatic spinning precursor solution 5ml of extraction step (2) passes through Static Spinning
(voltage 15kv, humidity 30%, needle point will be mixed silk technology to the distance 15cm, solution fltting speed 0.5ml/h received between substrate)
Miscellaneous electrostatic spinning precursor solution spinning covers 150nmSiO on surface22%-Mg doping is prepared on the silicon wafer of dielectric layer
In2O3NFs, then will be with the In of 2%-Mg doping2O3The silicon wafer of NFs is put into roasting glue platform roasting glue 10min, UV lamp annealing
Silicon wafer is then put into 600 DEG C of annealing 1h of Muffle furnace, taken out after cooled to room temperature, finally by thermal evaporation method by 40min
One layer of Al film is deposited on silicon wafer as source, drain electrode, and the 30min that anneals in 270 DEG C of nitrogen atmospheres, 2%- is prepared
The NFFETs of Mg doping；Experiment, which shows the doping of Mg to compare when being 2%, can effectively reduce In2O3The concentration of carrier in NFs,
The In of 2%-Mg doping2O3NFFETs has lower off-state current 10-12A, compared with experimental result Fig. 3 of embodiment 1, OFF state
Electric current has dropped 5 orders of magnitude, positive threshold voltage 5-8V, and threshold voltage moves right as positive value compared with Fig. 3, and big
On-off ratio 106, on-off ratio improves 1000 times compared with Fig. 3；Fig. 2 is the In of (a) 2%-Mg doping2O3The transmission electron microscope of NFs dark field
Picture and corresponding EDS element picture (b) In, (c) Mg, (d) O, illustrate that In, Mg, O element are uniformly distributed in nanofiber
In.
Embodiment 3:
The doping of Mg is compared for 1wt% in the present embodiment, other experiment conditions are same as Example 2, and experiment shows with Mg
Doping ratio increase, the In of prepared Mg doping2O3The ON state and off-state current of NFFETs is in downward trend, by right
Than showing that the optimum doping ratio of Mg is 1wt%, Fig. 1 is the In of the 1%-Mg doping prepared in the present embodiment2O3Before NFs annealing (a)
The SEM picture of (b), the In before annealing after annealing2O3The surface NFs smoother average diameter is in 300-400nm or so, annealing
In afterwards2O3The surface NFs is relatively rough, and due to polymer Polyvinylpyrrolidone (PVP) decomposition after annealing so that
In2O3NFs diameter is decreased obviously, the In after annealing2O3NFs average diameter 50-100nm；Fig. 4 is to prepare in the present embodiment
The In of 1%-Mg doping2O3The curve of output (a) and transfer curve (b) of NFs FET can significantly find out that its on-state current is 8
×10-5A, off-state current 10-11A, on-off ratio are 8 × 106, threshold voltage is about 2V, and compared with Fig. 3, off-state current is had dropped
4 orders of magnitude, threshold voltage moves right as positive value, 8000 times of on-off ratio raising compared with Fig. 3.
Embodiment 4:
The doping of Zr is compared for 5wt% in the present embodiment, other experiment conditions are same as Example 2, and experiment shows mixing for Zr
It is miscellaneous to effectively reduce In2O3The concentration of carrier in NFs, to regulate and control In2O3The electric property of NFs FET, the present embodiment
The In of prepared 5%Zr doping2O3NFs FET has good electrical properties: its on-state current 10-5A, off-state current 10-12A, on-off ratio 107, threshold voltage 4V.
Embodiment 5:
The doping of Sc is compared for 10wt% in the present embodiment, other experiment conditions are same as Example 2, and experiment shows mixing for Sc
It is miscellaneous to effectively reduce In2O3The concentration of carrier in NFs, to regulate and control In2O3The electric property of NFs FET, the present embodiment
The In of prepared 10%Sc doping2O3NFFETs has good electrical properties: its on-state current 10-5A, off-state current 10-11A, on-off ratio 106, threshold voltage 6V.
Embodiment 6:
The doping of Y is compared for 10wt% in the present embodiment, other experiment conditions are same as Example 2, and experiment shows the doping of Y
In can be effectively reduced2O3The concentration of carrier in NFs, to regulate and control In2O3The electric property of NFs FET, the present embodiment institute
The In of the 10%Y doping of preparation2O3NFFETs has good electrical properties: its on-state current 10-5A, off-state current 10- 12A, on-off ratio 107, threshold voltage 5V.
Embodiment 7:
The doping of Hf is compared for 5wt% in the present embodiment, other experiment conditions are same as Example 2, and experiment shows mixing for Hf
It is miscellaneous to effectively reduce In2O3The concentration of carrier in NFs, to regulate and control In2O3The electric property of NFs FET, the present embodiment
The In of prepared 5%Hf doping2O3NFFETs has good electrical properties: its on-state current 10-5A, off-state current 10-13A, on-off ratio 108, threshold voltage 2.5V.
Embodiment 8:
The doping of W is compared for 3wt% in the present embodiment, other experiment conditions are same as Example 2, and experiment shows the doping of W
In can be effectively reduced2O3The concentration of carrier in NFs, to regulate and control In2O3The electric property of NFs FET, the present embodiment institute
The In of the 3%W doping of preparation2O3NFFETs has good electrical properties: its on-state current 10-5A, off-state current 10-12A,
On-off ratio is 107, threshold voltage 3V.
Embodiment 9:
The doping of Ti is compared for 10wt% in the present embodiment, other experiment conditions are same as Example 2, and experiment shows mixing for Ti
It is miscellaneous to effectively reduce In2O3The concentration of carrier in NFs, to regulate and control In2O3The electric property of NFs FET, the present embodiment
The In of prepared 10%Ti doping2O3NFs FET has good electrical properties: its on-state current 10-6A, off-state current are
10-13A, on-off ratio 107, threshold voltage 7V.
Embodiment 10:
The present embodiment prepares the In of ordered arrangement 1%-Mg doping2O3NFs and In2O3NFFETs: during electrostatic spinning
Using homemade reception substrate, the In of ordered arrangement 1%-Mg doping is obtained2O3Then NFs covers 150-300nm with surface
SiO2The silicon wafer or ITO or FTO electro-conductive glass of dielectric layer collect the In of ordered arrangement 1%-Mg doping2O3NFs preparation
In2O3NFFETs, experiment condition is same as Example 2, and Fig. 6 is orderly 1%-Mg doping manufactured in the present embodiment
In2O3The curve of output (a) and transfer curve (b) of NFFETs, with Fig. 4 comparative illustration, the In of orderly Mg doping2O3NFFETs's
Output and transfer property obtained apparent raising, and on-state current improves 2 times, and on-off ratio improves 10 times, and threshold voltage is on the left side 2v
It is right.
Claims (1)
1. a kind of regulation method of indium oxide nanometer fiber field effect transistor electric property, it is characterised in that specific steps packet
It includes:
(1) electrostatic spinning precursor solution is prepared: by 6g polyvinylpyrrolidone, 0.8g indium trichloride tetrahydrate, 40g N,
Dinethylformamide is mixed in vial, is stirred well to solution transparent and homogeneous with magnetic stirring apparatus, and it is quiet to form the pure source In
Electrospun precursor solution；
(2) it adulterates the preparation of electrostatic spinning precursor solution: magnesium chloride hexahydrate 0.016g being taken to be dissolved in the pure source In that step 1 is configured
Electrostatic spinning precursor solution in, formed Mg doping than be 2wt% doping electrostatic spinning precursor solution；
(3) assembling of device: the prepared doping electrostatic spinning precursor solution 5ml of extraction step (2) passes through electrostatic spinning skill
Art, voltage 15kv, humidity 30%, needle point will adulterate quiet to the distance 15cm received between substrate, solution fltting speed 0.5ml/h
Electrospun precursor solution spinning covers 150nm SiO on surface22%-Mg doping is prepared on the silicon wafer of dielectric layer
In2O3NFs, then will be with the In of 2%-Mg doping2O3The silicon wafer of NFs is put into roasting glue platform roasting glue 10min, UV lamp annealing
Silicon wafer is then put into 600 DEG C of annealing 1h of Muffle furnace, taken out after cooled to room temperature, finally by thermal evaporation method by 40min
One layer of Al film is deposited on silicon wafer as source, drain electrode, and the 30min that anneals in 270 DEG C of nitrogen atmospheres, 2%- is prepared
The NFFETs of Mg doping.
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| CN107017307A (en) * | 2017-03-28 | 2017-08-04 | 青岛大学 | A kind of preparation method of low pressure p-type oxide nanofiber field-effect transistor |
| CN107331729B (en) * | 2017-06-26 | 2018-09-25 | 苏州科技大学 | The preparation method of wide temperate zone terahertz wave detector |
| CN109256439B (en) * | 2017-06-26 | 2021-09-10 | 苏州科技大学 | Substrate precursor for terahertz wave detection device and preparation method thereof |
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| CN108417641A (en) * | 2018-02-25 | 2018-08-17 | 青岛大学 | A kind of method that controllable thermal weld method prepares high performance field effect transistors |
| CN109103112A (en) * | 2018-08-14 | 2018-12-28 | 青岛大学 | A kind of preparation method of low-temperature environment-friendly nanofiber field effect transistor |
| CN111610234B (en) * | 2020-07-07 | 2021-09-07 | 上海大学 | Acetone gas sensor of field effect transistor and preparation method thereof |
| CN112881477A (en) * | 2021-01-19 | 2021-06-01 | 潍坊歌尔微电子有限公司 | Gas sensor based on field effect transistor and preparation method thereof |
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| Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors;Xuming Zou et al.;《ACS Nano》;20131231;第7卷(第1期);第804-810 * |
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