CN106486541A - A kind of regulation and control method of indium oxide nanometer fiber field-effect transistor electric property - Google Patents
A kind of regulation and control method of indium oxide nanometer fiber field-effect transistor electric property Download PDFInfo
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- CN106486541A CN106486541A CN201610935487.1A CN201610935487A CN106486541A CN 106486541 A CN106486541 A CN 106486541A CN 201610935487 A CN201610935487 A CN 201610935487A CN 106486541 A CN106486541 A CN 106486541A
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- nanofiber
- electrostatic spinning
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- metal
- effect transistor
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000005669 field effect Effects 0.000 title claims abstract description 23
- 239000000835 fiber Substances 0.000 title claims abstract description 12
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 8
- 238000010041 electrostatic spinning Methods 0.000 claims abstract description 54
- 239000002121 nanofiber Substances 0.000 claims abstract description 48
- 238000002360 preparation method Methods 0.000 claims abstract description 18
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 239000002243 precursor Substances 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 238000000137 annealing Methods 0.000 claims description 26
- 229910052749 magnesium Inorganic materials 0.000 claims description 26
- 238000002474 experimental method Methods 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 13
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 13
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims description 8
- 229910052735 hafnium Inorganic materials 0.000 claims description 8
- 229910052706 scandium Inorganic materials 0.000 claims description 8
- 229910052712 strontium Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000009987 spinning Methods 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 229910052723 transition metal Inorganic materials 0.000 claims description 6
- 150000003624 transition metals Chemical class 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 238000003760 magnetic stirring Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- UKCIUOYPDVLQFW-UHFFFAOYSA-K indium(3+);trichloride;tetrahydrate Chemical compound O.O.O.O.Cl[In](Cl)Cl UKCIUOYPDVLQFW-UHFFFAOYSA-K 0.000 claims 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims 1
- 230000001276 controlling effect Effects 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000011777 magnesium Substances 0.000 description 44
- 239000000243 solution Substances 0.000 description 37
- 239000002070 nanowire Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000012546 transfer Methods 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229910007486 ZnGa2O4 Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910002651 NO3 Inorganic materials 0.000 description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ANCMJQAPMSHZOQ-UHFFFAOYSA-N O.O.O.O.[In] Chemical compound O.O.O.O.[In] ANCMJQAPMSHZOQ-UHFFFAOYSA-N 0.000 description 2
- 238000005660 chlorination reaction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000935 solvent evaporation Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 229940050906 magnesium chloride hexahydrate Drugs 0.000 description 1
- DHRRIBDTHFBPNG-UHFFFAOYSA-L magnesium dichloride hexahydrate Chemical compound O.O.O.O.O.O.[Mg+2].[Cl-].[Cl-] DHRRIBDTHFBPNG-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000006250 one-dimensional material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F1/00—General methods for the manufacture of artificial filaments or the like
- D01F1/02—Addition of substances to the spinning solution or to the melt
- D01F1/10—Other agents for modifying properties
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Textile Engineering (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to transistor electricity performance control technique field, is related to a kind of regulation and control method of indium oxide nanometer fiber field-effect transistor electric property, In is prepared by easy, cheap electrostatic spinning technique2O3Nanofiber, and by simple metal-doped regulating and controlling In2O3The electric property of nanofiber field-effect transistor, reaches simplicity, regulates and controls In efficiently at low cost2O3The electric properties such as the threshold voltage of nanofiber field-effect transistor, off-state current, on-off ratio, the metal-doped In of excellent2O3Nanofiber field-effect transistor；Its preparation technology handy and safe, principle reliability, low production cost, prepared In2O3Nanofiber and metal-doped In2O3Nanofiber is had broad application prospects in fields such as electronic switching device, display, biology and chemical sensors, it is easy to carry out large-scale industrial production.
Description
Technical field：
The invention belongs to transistor electricity performance control technique field, is related to a kind of indium oxide nanometer fiber field effect transistor
Pipe (In2O3NFFETs) the regulation and control method of electric property, using Main Group Metal Elements (Mg, Al, Ga) or transition metal (Y, Sr, Sc
Deng) element carries out simple doping regulating and controlling In2O3NFFETs electric property, can be widely used in Performance Monitor, photoelectron device
The fields such as part, detector, rectifier.
Background technology：
Compared to bulk and thin-film material, one dimension semiconductor material is due to the electric transmission path, relatively low with orientation
The advantages of material cost, big specific surface area, excellent mechanical performance, the photoelectricity performance of device can be effectively improved.Mesh
Before, prepare one-dimensional material method mainly have chemical vapour deposition technique (CVD), thermal evaporation, electron-beam vapor deposition method, hydro-thermal method and
Method of electrostatic spinning etc., wherein method of electrostatic spinning prepare semiconductor nano fiber have flexible design, with low cost, easy to operate,
The advantages of yield is high and is applied to large-size device, its principle is electropolymer drop in capillary under the active force of electric field
Taylor's conical point be accelerated, when electric field force is sufficiently large, polymer drop can overcome surface tension formed injection thread, thread
It is stretched in course of injection, and along with solvent evaporation or solidifies, finally falls on the reception device, obtain nano wire or nanometer
Fiber.
Metal-oxide semiconductor (MOS) nanofiber especially In2O3Nanofiber (In2O3NFs) due to having suitably taboo
Bandwidth, larger carrier concentration, higher electron mobility and excellent chemical stability, cause people and widely close
Note and research, but In2O3With higher carrier concentration in NFs, therefore with In2O3The FET that NFs is prepared for semiconductor layer
There is negative threshold voltage, higher off-state current (10-7), minimum on-off ratio (103) the shortcomings of.Many research teams are to this
Problem is made that very big effort, and for example, Liao etc. is successfully prepared metal-doped using chemical vapour deposition technique (CVD)
In2O3Nano-wire fet, compensates the Lacking oxygen of nano wire by the doping of metal, dense so as to reduce the carrier in nano wire
Degree, finally given enhancement mode nano-wire field effect transistor (X.M.Zou, J.L.Wang, X.Q.Liu, etal.,
Controllable Electrical Properties of Metal-Doped In2O3Nanowires for High-
Performance Enhancement Mode Transistors,ACSNANO,7,804-810(2013))；Choi etc. is utilized
Method of electrostatic spinning is prepared for In2O3-ZnO-ZnGa2O4Composite nano fiber, due to ZnGa2O4With high impedance, can be effective
The transmission of regulation and control carrier has suitable ON state current, threshold voltage and switch so as to reach regulation and control composite nano fiber FET
Than having obtained high-performance In of low voltage operating2O3-ZnO-ZnGa2O4Composite nano fiber field-effect transistor (Low
Voltage Operating FieldEffect Transistors with Composite In2O3-ZnO-
ZnGa2O4Nanofiber Network as ActiveChannel Layer, ACSNANO, 8,2318-2327 (2014)).But
It is there is not yet preparing metal-doped polycrystalline In using method of electrostatic spinning2O3Semiconductor nano fiber, and adulterated by changing
Metal species and content realize the relevant report to its electric property regulation and control.
Content of the invention：
It is an object of the invention to the shortcoming for overcoming prior art to exist, seeks a kind of indium oxide semiconductor of design offer and receives
The regulation and control method of rice fiber field-effect transistor electric property, prepares In by easy, cheap electrostatic spinning technique2O3Nanometer
Fiber, and by simple metal-doped regulating and controlling In2O3The electric property of NFs FET, reaches simplicity, efficient, inexpensive
Ground regulation and control In2O3The electric properties such as the threshold voltage of NFs FET, off-state current, on-off ratio, excellent metal-doped
In2O3NFsFET.
To achieve these goals, the concrete technology step of the present invention includes：
(1) preparation of electrostatic spinning precursor solution：By 6-8g polyvinylpyrrolidone (PVP), 0.8-1.6g tri-chlorination
Indium tetrahydrate and 40g DMF (DMF) mix loaded in vial, are stirred well to magnetic stirring apparatus
Solution transparent and homogeneous, form the electrostatic spinning precursor solution in pure In source；
(2) preparation of doping electrostatic spinning precursor solution：By major element or the corresponding chlorate of transition metal
Or nitrate 0.8-0.16g is dissolved in the electrostatic spinning precursor solution in the pure In source that step (1) is prepared, forms metallic element and mix
The miscellaneous doping electrostatic spinning precursor solution than for 1-15wt%；
(3)In2O3The preparation of NFs and the assembling of device：The solution 5ml prepared by extraction step (1) or step (2), passes through
Existing electrostatic spinning technique spins the electrostatic spinning precursor solution in pure In source or doping electrostatic spinning precursor solution in table
Face covers 150-300nm SiO2In is prepared on the silicon chip of dielectric layer or ITO or FTO electro-conductive glass2O3Nanofiber
(In2O3) or metal-doped In NFs2O3Nanofiber (In2O3NFs), wherein electrostatic spinning voltage is 10-25kv, and humidity is 20-
50%, needle point to receive substrate between apart from 10-20cm, the electrostatic spinning precursor solution in pure In source or doping electrostatic spinning before
The fltting speed for driving liquid solution is 0.5-1ml/h；Then will obtain with In2O3Nanofiber (In2O3) or metal is mixed NFs
Miscellaneous In2O3Nanofiber (In2O3NFs silicon chip) or electro-conductive glass are put into roasting glue platform baking 10-60min, ultraviolet lamp annealing
20-60min, then silicon chip or electro-conductive glass are put into 400-600 DEG C of annealing 1-3h of Muffle furnace, take out after naturally cooling to room temperature,
Finally one layer of 50-200nmAl film is deposited with as source, leakage on silicon chip or electro-conductive glass using thermal evaporation method by the use of mask plate
Electrode, and the 30-90min that anneals in 200-300 DEG C of nitrogen atmosphere, prepare In2O3Nanofiber field-effect transistor
(In2O3) or metal-doped In NFFETs2O3Nanofiber field-effect transistor；
(4) the metal-doped In of ordered arrangement2O3The preparation of NFs and device assembling：Using homemade during electrostatic spinning
Substrate is received, the metal-doped In of ordered arrangement is obtained using bipolar electrode collecting method2O3NFs, then covers 150-300nm with surface
SiO2Metal-doped In in order collected by the silicon chip of dielectric layer or ITO or FTO electro-conductive glass2O3NFs carries out device assembling and obtains in order
Arrange metal-doped In2O3Nanofiber field-effect transistor, experiment condition are identical with step (3).
Major element of the present invention includes Mg, Al, Ga, and transition metal includes Y, Sr, Sc, Zr, Hf, W, Ti.
Step (4) of the present invention described homemade reception substrate refers to that receiving two pieces of placement above substrate in step (3) puts down
Capable silicon, aluminium, copper, tungsten or nickel, parallel pole position is according to In2O3Nanofiber ejection position and required rea adjusting, self-control connect
The length for receiving substrate is 1-10cm, and width is 1-10cm.
The operation principle of the present invention is：The Main Group Metal Elements (Mg, Ga, Al) of selection and transiting group metal elements (Y, Sr,
Sc, Zr, Hf, W, Ti) InXO can be combined to form with In, OyCompound, InXOyPhase and In2O3Boundary, phase boundary is formed between phase
Face has the effect similar to crystal boundary, with special interface energy, can effectively regulate and control the transmission of electronics, so as to reduce OFF state
Electric current；Lacking oxygen can be compensated additionally by the doping of metal, so as to reduce carrier concentration, reach regulation and control In2O3Nanofiber
The purpose of electric property.Therefore, by the doping of metallic element, it is possible to simply, efficiently regulate and control In2O3Nanofiber field is imitated
Answer the performances such as the threshold voltage of transistor, off-state current, on-off ratio.Also, by preparing the metal-doped of ordered arrangement
In2O3NFs, the excellent metal-doped In of final availability2O3NFFETs.
Electrostatic spinning technique of the present invention compared with existing nanofiber technology of preparing, employed in the present invention
In2O3NFs, its preparation technology handy and safe, principle reliability, low production cost, prepared In2O3NFs and metal-doped
In2O3NFs is had broad application prospects in fields such as electronic switching device, display, biology and chemical sensors, it is easy to entered
Row large-scale industrial production.
Description of the drawings：
Fig. 1 is the In of 1%-Mg doping prepared by the embodiment of the present invention 32O3SEM picture before and after NFs annealing, wherein (a)
In for 1%-Mg doping2O3SEM picture before NFs annealing, the In of (b) 1%-Mg doping2O3SEM picture after NFs annealing,
Test result indicate that, the In before annealing2O3NFs surface smoother, average diameter is after 300-400nm or so, annealing
In2O3NFs surface is relatively rough, and the decomposition due to polymer Polyvinylpyrrolidone (PVP) after annealing is caused
In2O3NFs diameter is decreased obviously, the In after annealing2O3NFs average diameter 50-100nm.
Fig. 2 is the In of 2%-Mg doping prepared by the embodiment of the present invention 22O3Transmission electron microscope picture (a) of NFs details in a play not acted out on stage, but told through dialogues and
Corresponding EDS element In (b), Mg (c), O (d) picture, In, Mg, O element are uniformly distributed in nanofiber.
Fig. 3 is In prepared by the embodiment of the present invention 12O3The curve of output (a) of NFFETs and transfer curve (b), as a result show
Show there is no the In for adulterating2O3Although property of the NFFETs with obvious FET, its off-state current are up to 10-7A, on-off ratio
Only 103, and with larger negative threshold voltage (- 18V), property is poor, and its reason is mainly due to In2O3Carrier in NFs
Concentration is higher, it is difficult to regulate and control its off-state current, causes prepared device to have larger off-state current.
Fig. 4 is the In of 1%-Mg doping prepared by the embodiment of the present invention 32O3The curve of output (a) of NFFETs and transfer curve
B (), and Fig. 3 comparative illustration, by In2O3NFs carries out simple Mg doping, and prepared FET still has larger ON state
Electric current (is only reduced to 8 × 105), its off-state current have dropped 4 orders of magnitude, and about 10-11A, on-off ratio up to 8 × 106, threshold value
Voltage in 2V or so, with very big application potential, by simple and easy to do Mg element doping, In2O3NFs FET electric property
Good regulation and control have been obtained, its principle is, on the one hand by the doping content of Mg being adjusted controlling crystal boundary in nanofiber
Quantity, crystal boundary play the role of electric transmission；On the other hand, by the doping of Mg, can compensate for Lacking oxygen and reduce carrier
Concentration, so as to reach regulation and control In2O3The purpose of carrier concentration in NFs, obtains high performance Mg doping In2O3NFFETs.
The In of the orderly Mg doping that Fig. 5 is prepared for the present invention2O3The optical microscope picture (a) of NFs and SEM picture (b),
Illustrate to obtain the Mg doping In of large area high-sequential by homemade collection device2O3NFs.
Fig. 6 is the In of orderly 1%-Mg doping prepared by the embodiment of the present invention 102O3The curve of output (a) of NFFETs and turn
Curve (b) is moved, with Fig. 4 comparative illustration, the In of orderly Mg doping2O3The output of NFFETs and transfer property were obtained and were significantly carried
Height, ON state current improve 10 times, and on-off ratio improves 10 times, and threshold voltage is in 2v or so.
Specific embodiment：
Below by embodiment and combine accompanying drawing and be described further.
Present embodiments provide a kind of channel material (In to NFFETs2O3NFs) carry out Main Group Metal Elements (Mg, Al,
Ga) and transiting group metal elements (Y, Sr, Sc, Zr, Hf, W, Ti) simply doping method, concrete technology is related in the quiet of pure In
Electrospun precursor solution mixes Main Group Metal Elements (Mg) and transiting group metal elements (Y, Sr, Sc, Zr, Hf, W, Ti) are corresponding
Chlorate or nitrate formed doping electrostatic spinning precursor solution, prepared by electrostatic spinning technique metal-doped
In2O3NFFETs, as above-mentioned metallic element can combine to form InXO with In, OyCompound, InXOyPhase and In2O3Shape between phase
Become boundary, boundary has the effect similar to crystal boundary, with special interface energy, can effectively regulate and control the biography of electronics
Defeated；On the other hand Lacking oxygen can be compensated by doping and reduces the concentration of carrier, so as to reach regulation and control In2O3NFs FET's
The purpose of the electric properties such as threshold voltage, off-state current, on-off ratio.
The semiconductor nano fiber that is studied in the present embodiment includes：In2O3、InXOy(X=Mg, Al, Ga, Y, Sr, Sc,
Zr、Hf、W、Ti)；Semiconductor nano fiber is prepared using electrostatic spinning technique, and its principle is powered polymer drop in electricity
Taylor's conical point in the presence of field force in capillary is accelerated, and when electric field force is sufficiently large, polymer drop can overcome surface
Tension force forms injection thread, and thread is stretched in course of injection, and along with solvent evaporation or solidifies, and finally falls and is receiving dress
Putting, nano wire or nanofiber being obtained, the present embodiment is achieved first and metal-doped In prepared using electrostatic spinning2O3Half
The combination of conductor nanofiber and field-effect transistor (FET), Fig. 1 (a), (b) show respectively for used in this experiment
The In of 1%-Mg doping2O3SEM picture before NFs annealing and after annealing, shows that the Nanowire Quality used in the present invention compares
Good, the In before annealing2O3NFs surface smoother, distribution of SMD between 300-400nm, In after annealing2O3NFs's is straight
Footpath than more uniform, average diameter between 50-100nm, In2O3NFs and doping In2O3It is concrete that the preparation of NFs and FET are assembled
Processing step includes：
(1) preparation of electrostatic spinning precursor solution：By 6-8g polyvinylpyrrolidone (PVP), 0.8-1.6g tri-chlorination
Indium tetrahydrate and 40g DMF (DMF) mix loaded in vial, are stirred well to magnetic stirring apparatus
Solution transparent and homogeneous, form the electrostatic spinning precursor solution in pure In source；
(2) preparation of doping electrostatic spinning precursor solution：By major element (Mg, Al, Ga) or transition metal (Y,
Sr, Sc, Zr, Hf, W, Ti) corresponding chlorate or nitrate 0.8-0.16g be dissolved in the Static Spinning in the pure In source that step (1) is prepared
In silk precursor solution, metallic element doping is formed than the doping electrostatic spinning precursor solution for 1-15wt%；
(3)In2O3The preparation of NFs and the assembling of device：The solution 5ml prepared by extraction step (1) or step (2), passes through
(to apart from 10-20cm between reception substrate, solution is pushed away needle point existing electrostatic spinning technique for voltage 10-25kv, humidity 20-50%
Enter speed 0.5-1ml/h) the electrostatic spinning precursor solution in pure In source or doping electrostatic spinning precursor solution are spinned in table
Face covers 150-300nm SiO2In is prepared on the silicon chip of dielectric layer or ITO or FTO electro-conductive glass2O3Nanofiber
(In2O3) or metal-doped In NFs2O3Nanofiber (In2O3NFs), then will obtain with In2O3Nanofiber
(In2O3) or metal-doped In NFs2O3Nanofiber (In2O3NFs silicon chip) or electro-conductive glass are put into roasting glue platform baking 10-
60min, ultraviolet lamp annealing 20-60min, then silicon chip or electro-conductive glass are put into 400-600 DEG C of annealing 1-3h of Muffle furnace, natural
Take out after being cooled to room temperature, finally one layer of 50- is deposited with silicon chip or electro-conductive glass using thermal evaporation method using mask plate
200nmAl film is used as source, drain electrode, and the 30-90min that anneals in 200-300 DEG C of nitrogen atmosphere, prepares In2O3Nanometer
Fiber field-effect transistor (In2O3) or metal-doped In NFFETs2O3Nanofiber field-effect transistor；
(4) the metal-doped In of ordered arrangement2O3The preparation of NFs and device assembling：Using homemade during electrostatic spinning
Receive substrate (to receive above substrate in step (3) and place two pieces of parallel silicon, aluminium, copper, tungsten, nickel electrodes, parallel pole position
Can be according to fiber ejection position and required rea adjusting：Length 1-10cm, width 1-10cm, i.e. bipolar electrode collecting method), had
Sequence arranges metal-doped In2O3NFs, then covers 150-300nm SiO with surface2The silicon chip of dielectric layer or ITO or FTO conduction
Metal-doped In in order collected by glass2O3NFs carries out device assembling and obtains the metal-doped In of ordered arrangement2O3Nanofiber field is imitated
Transistor is answered, experiment condition is identical with step (3).
Embodiment 1：
The present embodiment prepares In2O3The detailed process of NFFETs is：
(1) electrostatic spinning precursor solution is prepared：6g polyvinylpyrrolidone (PVP), 0.8g indium trichloride four are hydrated
Thing, 40gN, dinethylformamide (DMF) are mixed in vial, are stirred well to solution transparent and homogeneous with magnetic stirring apparatus,
Form pure In source electrostatic spinning precursor solution；
(2) assembling of device：The pure In source electrostatic spinning precursor solution 5ml that extraction step (1) is prepared, by Static Spinning
(needle point is to apart from 10-20cm, solution fltting speed 0.5- between reception substrate for voltage 10-25kv, humidity 20-50% for silk technology
1ml/h), pure In source electrostatic spinning precursor solution spinning is covered 150-300nm SiO on surface2The silicon chip of dielectric layer or
In is obtained on ITO or FTO electro-conductive glass2O3NFs, then will be with In2O3The silicon chip of NFs or electro-conductive glass are sequentially placed into roasting glue
Silicon chip or electro-conductive glass are subsequently put into 400-600 DEG C of annealing 1- of Muffle furnace by platform baking 10-60min, UV lamp annealing 20-60min
3h, takes out after naturally cooling to room temperature, is deposited with one layer of 50-200nmAl film conduct finally by thermal evaporation method on silicon chip
Source, drain electrode, and the 30-90min that anneals in 200-300 DEG C of nitrogen atmosphere, obtain In2O3NFFETs；Experiment shows, pure
In2O3NFFETs has poor electrical properties, and Fig. 3 is In manufactured in the present embodiment2O3(a) output of NFFETs and (b) transfer
Curve, shows the In not adulterated2O3Although property of the NFFETs with obvious FET, its property with general FET
Compare off-state current higher by (10-7A), on-off ratio very little (103), with larger negative threshold voltage (- 18v).
Embodiment 2：
The present embodiment prepares the In of 2%-Mg doping2O3The detailed process of NFs and NFFETs is：
(1) electrostatic spinning precursor solution is prepared：6g polyvinylpyrrolidone (PVP), 0.8g indium trichloride four are hydrated
Thing, 40gN, dinethylformamide (DMF) are mixed in vial, are stirred well to solution transparent and homogeneous with magnetic stirring apparatus,
Form pure In source；Electrostatic spinning precursor solution；
(2) preparation of doping electrostatic spinning precursor solution：Take that magnesium chloride hexahydrate 0.016g is dissolved in that step 1 configured is pure
In the electrostatic spinning precursor solution in In source, Mg doping is formed than the doping electrostatic spinning precursor solution for 2wt%；
(3) assembling of device：The doping electrostatic spinning precursor solution 5ml prepared by extraction step (2), by Static Spinning
Silk technology (needle point is to apart from 15cm, solution fltting speed 0.5ml/h between reception substrate for voltage 15kv, humidity 30%), will mix
Miscellaneous electrostatic spinning precursor solution spinning covers 150nmSiO on surface22%-Mg doping is prepared on the silicon chip of dielectric layer
In2O3NFs, then by the In with 2%-Mg doping2O3The silicon chip of NFs is put into roasting glue platform roasting glue 10min, UV lamp annealing
Silicon chip is subsequently put into 600 DEG C of annealing 1h of Muffle furnace, takes out, finally by thermal evaporation method after naturally cooling to room temperature by 40min
One layer of Al film is deposited with silicon chip as source, drain electrode, and the 30min that anneals in 270 DEG C of nitrogen atmospheres, prepare 2%-
The NFFETs of Mg doping；Experiment shows that the doping of Mg is compared for effectively reducing In when 2%2O3The concentration of carrier in NFs,
The In of 2%-Mg doping2O3NFFETs has relatively low off-state current 10-12A, compared with experimental result Fig. 3 of embodiment 1, OFF state
Electric current have dropped 5 orders of magnitude, positive threshold voltage 5-8V, compared with Fig. 3 threshold voltage move right be on the occasion of and big
On-off ratio 106, on-off ratio improves 1000 times compared with Fig. 3；Fig. 2 is the In of (a) 2%-Mg doping2O3The transmission electron microscope of NFs details in a play not acted out on stage, but told through dialogues
Picture and corresponding EDS element picture (b) In, (c) Mg, (d) O, illustrate that In, Mg, O element is uniformly distributed in nanofiber
In.
Embodiment 3：
In the present embodiment, the doping of Mg is compared for 1wt%, and other experiment conditions are same as Example 2, and experiment shows with Mg
Doping ratio increase, the In of prepared Mg doping2O3The ON state of NFFETs and off-state current are in downward trend, by right
Optimum doping ratio than drawing Mg is the In that 1wt%, Fig. 1 are the 1%-Mg doping prepared in the present embodiment2O3Before NFs annealing (a)
The SEM picture of (b), the In before annealing after annealing2O3NFs surface smoother average diameter is annealed in 300-400nm or so
In afterwards2O3NFs surface is relatively rough, and the decomposition due to polymer Polyvinylpyrrolidone (PVP) after annealing is caused
In2O3NFs diameter is decreased obviously, the In after annealing2O3NFs average diameter 50-100nm；Fig. 4 is to prepare in the present embodiment
The In of 1%-Mg doping2O3The curve of output (a) of NFs FET and transfer curve (b), can significantly find out its ON state current for 8
×10-5A, off-state current are 10-11A, on-off ratio are 8 × 106, threshold voltage is about 2V, and compared with Fig. 3, off-state current have dropped
4 orders of magnitude, it is to improve 8000 times on the occasion of, on-off ratio that threshold voltage moves right compared with Fig. 3.
Embodiment 4：
In the present embodiment, the doping of Zr is compared for 5wt%, and other experiment conditions are same as Example 2, and experiment shows mixing for Zr
Miscellaneous can effectively reduce In2O3The concentration of carrier in NFs, so as to regulate and control In2O3The electric property of NFs FET, the present embodiment
The In of prepared 5%Zr doping2O3NFs FET has good electrical properties：Its ON state current 10-5A, off-state current are 10-12A, on-off ratio are 107, threshold voltage is 4V.
Embodiment 5：
In the present embodiment, the doping of Sc is compared for 10wt%, and other experiment conditions are same as Example 2, and experiment shows mixing for Sc
Miscellaneous can effectively reduce In2O3The concentration of carrier in NFs, so as to regulate and control In2O3The electric property of NFs FET, the present embodiment
The In of prepared 10%Sc doping2O3NFFETs has good electrical properties：Its ON state current 10-5A, off-state current are 10-11A, on-off ratio are 106, threshold voltage is 6V.
Embodiment 6：
In the present embodiment, the doping of Y is compared for 10wt%, and other experiment conditions are same as Example 2, and experiment shows the doping of Y
In can be effectively reduced2O3The concentration of carrier in NFs, so as to regulate and control In2O3The electric property of NFs FET, the present embodiment institute
The In of the 10%Y doping of preparation2O3NFFETs has good electrical properties：Its ON state current 10-5A, off-state current are 10- 12A, on-off ratio are 107, threshold voltage is 5V.
Embodiment 7：
In the present embodiment, the doping of Hf is compared for 5wt%, and other experiment conditions are same as Example 2, and experiment shows mixing for Hf
Miscellaneous can effectively reduce In2O3The concentration of carrier in NFs, so as to regulate and control In2O3The electric property of NFs FET, the present embodiment
The In of prepared 5%Hf doping2O3NFFETs has good electrical properties：Its ON state current 10-5A, off-state current are 10-13A, on-off ratio are 108, threshold voltage is 2.5V.
Embodiment 8：
In the present embodiment, the doping of W is compared for 3wt%, and other experiment conditions are same as Example 2, and experiment shows the doping of W
In can be effectively reduced2O3The concentration of carrier in NFs, so as to regulate and control In2O3The electric property of NFs FET, the present embodiment institute
The In of the 3%W doping of preparation2O3NFFETs has good electrical properties：Its ON state current 10-5A, off-state current are 10-12A,
On-off ratio is 107, threshold voltage is 3V.
Embodiment 9：
In the present embodiment, the doping of Ti is compared for 10wt%, and other experiment conditions are same as Example 2, and experiment shows mixing for Ti
Miscellaneous can effectively reduce In2O3The concentration of carrier in NFs, so as to regulate and control In2O3The electric property of NFs FET, the present embodiment
The In of prepared 10%Ti doping2O3NFs FET has good electrical properties：Its ON state current 10-6A, off-state current is
10-13A, on-off ratio are 107, threshold voltage is 7V.
Embodiment 10：
The present embodiment prepares the In of ordered arrangement 1%-Mg doping2O3NFs and In2O3NFFETs：During electrostatic spinning
Using homemade reception substrate, the In of ordered arrangement 1%-Mg doping is obtained2O3NFs, then covers 150-300nm with surface
SiO2The In of ordered arrangement 1%-Mg doping collected by the silicon chip of dielectric layer or ITO or FTO electro-conductive glass2O3Prepared by NFs
In2O3NFFETs, experiment condition are same as Example 2, and Fig. 6 is orderly 1%-Mg doping manufactured in the present embodiment
In2O3The curve of output (a) of NFFETs and transfer curve (b), with Fig. 4 comparative illustration, the In of orderly Mg doping2O3NFFETs's
Output and transfer property obtained significantly raising, and ON state current improves 2 times, and on-off ratio improves 10 times, and threshold voltage is left in 2v
Right.
Claims (3)
1. a kind of regulation and control method of indium oxide nanometer fiber field-effect transistor electric property, it is characterised in that concrete steps bag
Include：
(1) preparation of electrostatic spinning precursor solution：By 6-8g polyvinylpyrrolidone, 0.8-1.6g indium trichloride tetrahydrate
Mix loaded in vial with 40g DMF, solution transparent and homogeneous, shape is stirred well to magnetic stirring apparatus
Become the electrostatic spinning precursor solution in pure In source；
(2) preparation of doping electrostatic spinning precursor solution：By major element or the corresponding chlorate of transition metal or nitre
Hydrochlorate 0.8-0.16g is dissolved in the electrostatic spinning precursor solution in the pure In source that step (1) is prepared, and forms metallic element doping ratio
Doping electrostatic spinning precursor solution for 1-15wt%；
(3)In2O3The preparation of NFs and the assembling of device：The solution 5ml prepared by extraction step (1) or step (2), by electrostatic
The electrostatic spinning precursor solution in pure In source or doping electrostatic spinning precursor solution spinning are covered by spining technology on surface
150-300nm SiO2In is prepared on the silicon chip of dielectric layer or ITO or FTO electro-conductive glass2O3Nanofiber is metal-doped
In2O3Nanofiber, wherein electrostatic spinning voltage are 10-25kv, and humidity is 20-50%, and needle point is to the distance received between substrate
10-20cm, the fltting speed of the electrostatic spinning precursor solution in pure In source or doping electrostatic spinning precursor solution is 0.5-
1ml/h；Then will obtain with In2O3Nanofiber or metal-doped In2O3The silicon chip of nanofiber or electro-conductive glass are put into
Roasting glue platform baking 10-60min, ultraviolet lamp annealing 20-60min, then silicon chip or electro-conductive glass are put into 400-600 DEG C of Muffle furnace
Annealing 1-3h, takes out after naturally cooling to room temperature, finally using mask plate using thermal evaporation method on silicon chip or electro-conductive glass
One layer of 50-200nmAl film of evaporation is used as source, drain electrode, and the 30-90min that anneals in 200-300 DEG C of nitrogen atmosphere, prepares
Obtain In2O3Nanofiber field-effect transistor or metal-doped In2O3Nanofiber field-effect transistor；
(4) the metal-doped In of ordered arrangement2O3The preparation of NFs and device assembling：Using homemade reception during electrostatic spinning
Substrate, obtains the metal-doped In of ordered arrangement using bipolar electrode collecting method2O3Nanofiber, then covers 150-300nm with surface
SiO2Metal-doped In in order collected by the silicon chip of dielectric layer or ITO or FTO electro-conductive glass2O3Nanofiber carries out device and assembles
To the metal-doped In of ordered arrangement2O3Nanofiber field-effect transistor, experiment condition are identical with step (3).
2. the regulation and control method of indium oxide nanometer fiber field-effect transistor electric property according to claim 1, its feature exist
Include Mg, Al or Ga in the major element, transition metal includes Y, Sr, Sc, Zr, Hf, W or Ti.
3. the regulation and control method of indium oxide nanometer fiber field-effect transistor electric property according to claim 1, its feature exist
In step (4) the homemade reception substrate refer to step (3) receive above substrate place two blocks of parallel silicon, aluminium, copper,
Tungsten or nickel, parallel pole position is according to In2O3Nanofiber ejection position and required rea adjusting, self-control receive the length of substrate
For 1-10cm, width is 1-10cm.
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