CN108417494B - Preparation method of field effect transistor based on ZnSnO nano-fibers - Google Patents
Preparation method of field effect transistor based on ZnSnO nano-fibers Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
The invention discloses a preparation method of a field effect transistor based on ZnSnO nano-fibers, which comprises the steps of firstly, ZrO is carried out2Preparing precursor solution, namely selecting P-type low-resistance silicon as a substrate and a gate electrode for cleaning to prepare ZrO2The invention has the beneficial effects that the low-cost and industrial production can be realized, the overall process is simple, and the principle is reliable.
Description
Technical Field
The invention belongs to the technical field of semiconductor material preparation, and relates to a preparation method of a metal oxide high dielectric constant (high-k for short) film and a metal oxide semiconductor.
Background
In the past half century, human science and technology civilization has been advanced dramatically, and the rapid development of electronic technology is undoubtedly an important part for promoting the advancement of human civilization. The 21 st century will be the era of electronic technology, and people can control and adjust household appliances by using mobile phones or smaller mobile portable terminals, so that life and work are more convenient. All of these products are made up of electronic devices, such as smart phones, tablets, televisions, and the like. The above-mentioned electronic device driving sections are each constituted by a gate circuit composed of a Field Effect Transistor (FET) as an amplifier or a switch. Because different active layer materials have great influence on the performance of the field effect transistor, a great deal of field effect transistors made of different materials are researched, wherein the field effect transistor made of organic materials has low preparation costBut suffer from the limitation of low carrier mobility; the inorganic metal oxide field effect transistor has the advantages of high mobility, simple preparation process, strong stability and good transparency, can be produced in a large scale, and shows a huge application prospect. However, each metal oxide semiconductor material has its own characteristics, and cannot meet all application requirements. At present, a single-doped material is mostly applied, the application is limited, the performance is single, and all application requirements are difficult to meet. In order to develop field effect transistor materials suitable for specific applications, various metal oxide materials (e.g., ZnO, SnO)2Etc.) to prepare materials with new characteristics. Although the research and application of the ITO semiconductor material are the most extensive and mature, it has been industrially produced in countries such as the united states of america and japan. However, In is a rare metal, can only be exploited as a byproduct, is very limited In reserves and yields, is expensive, and is more expensive as resources are consumed. On the one hand, Zn and Sn have been considered as ideal candidates for active layer materials due to the large storage capacity and low cost of nature. On the other hand, future society demands the use of all green, low cost and recyclable materials that are also compatible with economically viable process technologies.
Electrospinning is a spinning method in which a polymer fluid or melt is sprayed and drawn from a nozzle under the action of a high-voltage electric field to obtain solid nano-sized fibers (adv. mater.16,1151, 2004). In 1934, an apparatus for producing polymer filaments from a solution of cellulose acetate in acetone as a solvent by electrostatic thrust was invented by Formhals and patented, after which much researchers studied electrostatic spinning. After the 90 s of the 20 th century, people paid attention to the electrostatic spinning technology along with the rise of research on nano materials and nano technology. The fiber prepared by the electrostatic spinning method has the advantages of small diameter, various advantages such as anisotropic fiber orientation, large specific surface area, high porosity, consistent fineness, high uniformity, large length-diameter ratio and the like, and has special properties in the fields of chemistry, physics (heat, light, electromagnetism and the like), so that the fiber has huge application potential in the aspects of medicine, industry, national defense and the like, and arouses the strong interest of researchers. It should be noted that the electrospinning technique can produce not only polymer fibers but also composite fibers and oxide fibers. When the material advantages of metal oxide and the technical advantages of electrostatic spinning are combined, a good microelectronic technical development route is presented in front of us.
Disclosure of Invention
The invention aims to provide a preparation method of a field effect transistor based on ZnSnO nano-fibers, which solves the problems of high preparation cost, complex process, difficult industrial production or poor reliability of the traditional metal oxide field effect transistor. The invention has the advantages of low cost and industrial production, simple overall process, reliable principle, short preparation time, high performance of the prepared field effect transistor, good stability, low cost, wide application prospect, good economic benefit and wide market prospect.
The technical scheme adopted by the invention is carried out according to the following steps:
(1)ZrO2preparing a precursor solution: zr (NO)3)4·5H2O is dissolved in N, N-dimethylformamide and is magnetically stirred at room temperature to form clear and transparent ZrO2Precursor solution;
(2) cleaning a substrate: selecting P-type low-resistance silicon as a substrate and a gate electrode, sequentially cleaning the low-resistance silicon substrate by using acetone and absolute ethyl alcohol through ultrasonic waves, washing the substrate by using deionized water, and drying the substrate by using a nitrogen gun;
(3)ZrO2preparing a film: spin-coating ZrO on the cleaned low-resistance silicon substrate by adopting a sol-gel method2The precursor solution is firstly homogenized for 4-8 seconds at 400-600 revolutions per minute, and then homogenized for 15-30 seconds at 3000-6000 revolutions per minute, wherein the spin coating frequency is 1-3 times, and the thickness of each spin coating is 5-10 nanometers; placing the spin-coated film on a glue baking table to be baked at a low temperature of 100-200 ℃; after UV light treatment for 40-60 minutes, annealing at 200-600 ℃ for 1-3 hours to realize dehydroxylation and metal oxide densification process to obtain ZrO2A film;
(4) preparation of ZnSnO precursor solution: SnCl2And ZnCl2Mixing the materials according to different molar ratios, dissolving the materials in N, N-dimethylformamide, and magnetically stirring the materials at normal temperature to form a clear and transparent ZnSnO precursor solution;
(5) adding polyvinylpyrrolidone: adding a proper amount of polyvinylpyrrolidone (PVP) into the ZnSnO precursor solution to obtain a mixed solution;
(6) preparing ZnSnO nano-fibers by an electrostatic spinning method: then the ZrO will grow2Attaching the substrate of the film to a collecting plate, adding the mixed solution prepared in the step (5) into an injection pump, spraying the solution in the injection pump from a needle head, violently shaking and rapidly reducing the diameter, and finally receiving the solution by the collecting plate to prepare the one-dimensional ZnSnO nano fiber;
(7) UV light treatment and high-temperature calcination: and (3) placing the ZnSnO nano-fiber prepared in the step (6) on a glue baking table for low-temperature baking for 10-20 minutes, then placing under a high-pressure mercury lamp for processing for 30-60 minutes, and carrying out thermal annealing in a muffle furnace at the temperature of 300-700 ℃ to obtain the metal oxide nano-fiber.
Further, in the step (1), clear and transparent ZrO with concentration of 0.03-0.3 mol/L is formed by magnetic stirring2And (3) precursor solution.
Further, the resistivity of the low-resistance silicon substrate in the step (2) is 0.0015 Ω · cm.
Further, in the step (3), firstly, spin-coating for 4-8 seconds at 400-600 rpm, and then spin-coating for 15-30 seconds at 3000-6000 rpm, wherein the spin-coating frequency is 1-3 times, and the thickness of each spin-coating is 5-10 nanometers; placing the spin-coated film on a glue baking table to be baked at a low temperature of 100-200 ℃; and after the UV light treatment is carried out for 40-60 minutes, annealing the film for 1-3 hours at the temperature of 200-600 ℃.
Further, in the step (4), clear and transparent ZnSnO precursor solution with the concentration of 0.05-0.3 mol/L is formed by magnetic stirring at normal temperature.
Further, in the step (5), the mass ratio of the polyvinylpyrrolidone to the N, N-dimethylformamide is 1: 3-7, and continuously magnetically stirring for 1-24 hours at the temperature of 20-100 ℃.
Further, in the step (6), the injection pump is propelled at a speed of 0.4-0.6 ml/h, a needle head of the injection pump is connected with a 10-22 kV direct-current high-voltage power supply, the distance between the needle head and a receiving end is 5-20 cm, and the spinning time is 0.1-5 minutes.
Further, in the step (7), the wavelength range of the mercury lamp is 100-400 nanometers, the power is 1-2 kilowatts, the distance from the mercury lamp is 5-20 centimeters, the ultraviolet light treatment time is 20-60 minutes, and the thermal annealing time in a muffle furnace is 1-3 hours.
Drawings
FIG. 1 is a schematic structural diagram of a MOSFET fabricated according to the present invention;
FIG. 2 shows a SiO-based composition prepared according to the present invention2The ZnSnO nano-fiber field effect transistor transfer characteristic curves of different concentration molar ratios of the dielectric layer;
FIG. 3 shows the preparation of a ZrO based alloy according to the invention2ZnSnO (Zn: Sn ═ 0.3:0.7) nanofiber field effect transistor transfer characteristic curves for the high-k dielectric layers.
Detailed Description
The present invention will be described in detail with reference to the following embodiments.
Example 1:
(1)、ZrO2preparing a precursor solution: zr (NO)3)4·5H2Dissolving O in N, N-dimethylformamide, and magnetically stirring at room temperature for 1-24 hours to form clear and transparent ZrO with concentration of 0.03-0.3 mol/L2Precursor solution;
(2) cleaning a substrate: then selecting commercially available single-side polished P-type low-resistance silicon as a substrate and a gate electrode, wherein the resistivity of the low-resistance silicon substrate is 0.0015 omega-cm, sequentially cleaning the low-resistance silicon substrate by using acetone and absolute ethyl alcohol through ultrasonic waves for 10 minutes respectively, washing the low-resistance silicon substrate by using deionized water for 3-5 times, and then drying the low-resistance silicon substrate by using nitrogen with the purity of 99.99%;
(3)ZrO2preparing a film: cleaning the surface of the low-resistance silicon substrate by adopting a plasma cleaning method, and respectively spin-coating the ZrO prepared in the step (1) on the cleaned low-resistance silicon substrate by adopting a conventional spin-coating technology2The precursor solution is first homogenized for 4-8 seconds at 400-600 rpm and thenSpin-coating at 3000-6000 rpm for 15-30 seconds, wherein the spin-coating times are 1-3 times, and the thickness of each spin-coating is 5-10 nanometers; placing the spin-coated film on a glue baking table to be baked at a low temperature of 100-200 ℃; after UV light treatment for 40-60 minutes, annealing the ZrO layer at the temperature of 200-600 ℃ for 1-3 hours to realize the dehydroxylation and the densification of the metal oxide, thereby obtaining ZrO2A film;
(4) preparation of ZnSnO precursor solution: SnCl2And ZnCl2Mixed in different molar ratios, i.e. Zn/(Zn + Sn) ═ X/(X + Y) { note: dissolving X + Y into 10 ml of N, N-dimethylformamide, and magnetically stirring at normal temperature for 1-24 hours to form a clear and transparent ZnSnO precursor solution with the concentration of 0.05-0.3 mol/L;
(5) adding polyvinylpyrrolidone: and (3) adding polyvinylpyrrolidone into the viscous solution prepared in the step (4), wherein the mass ratio of polyvinylpyrrolidone to N, N-dimethylformamide is 1: 3-7, and continuously magnetically stirring for 1-24 hours at the temperature of 20-100 ℃ to obtain a mixed solution;
(6) preparing ZnSnO nano-fibers by an electrostatic spinning method: attaching the P-type low-resistance silicon substrate which is treated in the step (3) or thermally oxidized with silicon dioxide to a receiving end, adding the mixed solution prepared in the step (5) into an injection pump, propelling the injection pump at the speed of 0.4-0.6 ml/h, connecting a 10-22 kV direct-current high-voltage power supply to a needle head of the injection pump, enabling the needle head to be 5-20 cm away from the receiving end, spinning for 0.1-5 minutes, and under the action of electric field force, coulomb force, surface tension and the like, spraying the solution in the injection pump out of the needle head, violently shaking and rapidly reducing the diameter of the solution, and finally receiving the solution by the receiving end to prepare the one-dimensional ZnSnO nanofiber;
(7) UV light treatment and high-temperature calcination: baking the ZnSnO nano-fibers prepared in the step (6) on a glue baking table at the temperature of 100-200 ℃ for 8-20 minutes; then placing the ZnSnO nano-fiber under a high-pressure mercury lamp, wherein the wavelength range of the mercury lamp is 100-400 nanometers, the power is 1-2 kilowatts, the distance from the mercury lamp is 5-20 centimeters, the ultraviolet light treatment time is 20-60 minutes, and the ZnSnO nano-fiber has longer absorptivity to light below 350 nanometers; treating for 1-3 hours at the temperature of 300-700 ℃ in a muffle furnace to obtain metal oxide nanofibers with the diameters of 80-200 nanometers;
(8) preparation of source and drain electrodes: preparing metal source and drain electrodes on the ZnSnO nanofiber channel layer by using a stainless steel mask plate by using a conventional vacuum thermal evaporation method to obtain the SiO-based nano-fiber channel layer2Dielectric layers or based on ultra-thin ZrO2An n-type ZnSnO nanofiber field effect transistor of a high-k dielectric layer.
The length-width ratio of an electrode channel of the n-type ZnSnO field effect transistor prepared in the step (8) is 1: 4-20, and the thermal evaporation current is 30-50A; the prepared source and drain electrodes are metal Al, Ti or Ni electrodes, and the thickness of the electrodes is 50-200 nanometers.
Example 2:
zr (NO) in this example3)4·5H2O，SnCl2And ZnCl2The powder is purchased from Aldrich company and has the purity of more than 98 percent; the bottom grid structure is made of ultra-thin ZrO2The preparation process of the field effect transistor which is a high-k dielectric layer and takes ZnSnO nano fibers with different molar ratios as channel layers respectively comprises the following steps:
(1) spin coating preparation of ultrathin ZrO by sol-gel method2High-k dielectric film:
step 1: selecting commercially available single-side polished low-resistance silicon (-0.0015 omega cm) as a substrate and a gate electrode, sequentially and ultrasonically cleaning the low-resistance silicon substrate by acetone and alcohol for 10 minutes respectively, repeatedly washing the substrate by deionized water, and drying the substrate by high-purity nitrogen;
step 2: 10 ml of N, N-dimethylformamide was weighed, and Zr (NO) was added3)4·5H2Dissolving O in N, N-dimethylformamide according to 0.15M, mixing, and stirring at room temperature for 6 hours under the action of magnetic stirring to form clear, colorless and transparent ZrO2A precursor liquid;
and step 3: putting a clean low-resistance silicon substrate into a plasma cleaning cavity, introducing high-purity (99.99%) oxygen after the cavity is pumped to 0.5Pa, controlling the power to be 37Watt, the cleaning time to be 120s, and the introduction amount of the oxygen to be 30SCCM during working;
and 4, step 4: spin-coating the precursor solution prepared in the step 2 on the cleaned low-resistance silicon substrate, and spin-coating the precursor solutionThe parameters of the liquid time spin coater are as follows: firstly, 500 turns/min glue is homogenized for 5 seconds, and then 5500 turns/min glue is homogenized for 20 seconds; after the spin coating is finished, the mixture is placed on a glue baking table to be baked for 10 minutes at the temperature of 150 ℃, then is placed in a muffle furnace to be annealed after being subjected to UV light treatment for 40 minutes, the annealing temperature is 550 ℃, and the annealing time is 2 hours, so that ZrO is obtained2A film.
(2) Preparing and electrospinning ZnSnO precursor solution and a channel layer:
step 1: SnCl2And ZnCl2Mixing Zn/(Zn + Sn) at different molar ratios of 0, 0.1, 0.3, 0.7, 0.9 and 1 in 10 ml of N, N-dimethylformamide, and stirring at room temperature for 6 hours under the action of magnetic stirring to form a clear, colorless and transparent ZnSnO solution, wherein the concentration of the precursor solution is 0.2M;
step 2: and adding polyvinylpyrrolidone into the viscous solution prepared in the step 1, wherein the mass ratio of the polyvinylpyrrolidone to the N, N-dimethylformamide is 1: 5, continuously magnetically stirring for 12 hours at room temperature to obtain a mixed solution;
and step 3: adding the mixed solution prepared in the step 2 into an injection pump, propelling the injection pump at the speed of 0.5 ml/h, connecting a 15 kV direct-current high-voltage power supply to a needle head of the injection pump, enabling the needle head to be 15 cm away from a receiving end, enabling the spinning time to be 27 seconds, enabling the solution in the injection pump to be sprayed out of the needle head and to shake violently under the action of electric field force, coulomb force, surface tension and the like, enabling the diameter to fall rapidly, and finally receiving the solution by a collecting plate to prepare the one-dimensional ZnSnO nanofiber;
and 4, step 4: placing the ZnSnO nano-fiber prepared in the step 3 on a glue baking table at 150 ℃ for baking for 15 minutes; then placing the substrate under a high-pressure mercury lamp, wherein the wavelength range of the mercury lamp is 100-400 nanometers, the power is 1 kilowatt, the distance from the mercury lamp is 15 centimeters, and the ultraviolet light treatment time is 40 minutes; and treating the mixture for 2 hours at the temperature of 500 ℃ in a muffle furnace to obtain the metal oxide nanofiber with the diameter of 150 nanometers.
(3) Preparing a source metal electrode and a drain metal electrode by adopting a vacuum thermal evaporation method:
through a thermal evaporation mode, metal Al with the thickness of 100 nanometers is prepared on the ZnSnO channel layer by using a stainless steel mask plate with the width-length ratio of 1000/250 micrometers as a source and a drainElectrode, thermal evaporation current is 40A, and Al/ZnSnO/ZrO is prepared2A field effect transistor of a/Si structure;
(4) for prepared Al/ZnSnO/ZrO2The field effect transistor of the/Si structure (fig. 1) was tested; prepared Al/ZnSnO/SiO2The corresponding transfer characteristic curve of the/Si structure field effect transistor is shown in FIG. 2; prepared Al/ZnSnO/ZrO2The corresponding transfer characteristic curve of the/Si structure field effect transistor is shown in FIG. 3; wherein the curves of fig. 2 and 3 are obtained from the gishili 2634B semiconductor source table test.
Compared with the prior art, the invention has the following advantages:
(1) produced ZrO2The physical thickness of the high-k gate dielectric layer is less than 20 nanometers, and the low leakage current and the large capacitance density of the high-k gate dielectric layer meet the requirements of microelectronic integration on the size of a device;
(2)ZrO2the film and ZnSnO nano-fiber have high transmittance and visible light band>90 percent, meets the requirements of transparent electronic devices on the material; produced ZrO2The film is amorphous, and large-area and uniform preparation of the film can be realized;
(3) n-type ZnSnO nanofiber semiconductor channel layer and ZrO in field effect transistor2The dielectric layer is prepared by using an electrostatic spinning and sol method, the preparation process does not need a high vacuum environment, the preparation can be carried out in the air, the production cost is reduced, large-area film formation is easy, and the requirements of future industrialization are met.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the present invention in any way, and all simple modifications, equivalent variations and modifications made to the above embodiments according to the technical spirit of the present invention are within the scope of the present invention.
Claims (6)
1. A preparation method of a field effect transistor based on ZnSnO nano-fibers is characterized by comprising the following steps:
(1)ZrO2preparing a precursor solution: zr (NO)3)4·5H2O is dissolved in the N, and the obtained solution is,in N-dimethylformamide, magnetically stirring at room temperature to form clear and transparent ZrO2Precursor solution;
(2) cleaning a substrate: selecting P-type low-resistance silicon as a substrate and a gate electrode, sequentially cleaning the low-resistance silicon substrate by using acetone and absolute ethyl alcohol through ultrasonic waves, washing the substrate by using deionized water, and drying the substrate by using nitrogen;
(3)ZrO2preparing a film: cleaning the surface of the low-resistance silicon substrate, and respectively spin-coating ZrO on the cleaned low-resistance silicon substrate by adopting a spin sol-gel method2Precursor solution, the spin-coated film is placed on a glue baking table for baking; then carrying out UV light treatment, and then annealing the ZrO layer to realize dehydroxylation and metal oxide densification process to obtain ZrO2A film;
(4) preparation of ZnSnO precursor solution: SnCl2And ZnCl2Mixing the materials in different molar ratios, dissolving the materials in N, N-dimethylformamide, and magnetically stirring the materials at normal temperature to form a clear and transparent ZnSnO precursor solution;
(5) adding polyvinylpyrrolidone: adding polyvinylpyrrolidone into the ZnSnO precursor solution to obtain a mixed solution;
(6) preparing ZnSnO nano-fibers by an electrostatic spinning method: then the ZrO will grow2Attaching a substrate of the film to a collecting plate, adding the mixed solution prepared in the step (5) into an injection pump, spraying the solution in the injection pump from a needle head, violently shaking and rapidly reducing the diameter, and finally receiving the solution by the collecting plate to prepare the one-dimensional ZnSnO nano fiber;
(7) UV light treatment and high-temperature calcination: placing the ZnSnO nano-fibers prepared in the step (6) on a glue baking table for baking; then the fiber is placed under a high-pressure mercury lamp and processed in a muffle furnace to obtain the metal oxide nanofiber.
2. The method of claim 1, wherein the field effect transistor is formed by a process comprising the steps of: and (3) the resistivity of the low-resistance silicon substrate in the step (2) is 0.0015 omega cm.
3. The method of claim 1, wherein the field effect transistor is formed by a process comprising the steps of: in the step (3), firstly, spin-coating at 400-600 rpm for 4-8 seconds, then spin-coating at 3000-6000 rpm for 15-30 seconds, wherein the spin-coating times are 1-3 times, and the thickness of each spin-coating is 5-10 nm; placing the spin-coated film on a glue baking table, and baking at a low temperature of 100-200 ℃; UV light treatment is carried out for 40-60 minutes, and then the annealing is carried out for 1-3 hours at the temperature of 200-600 ℃.
4. The method of claim 1, wherein the field effect transistor is formed by a process comprising the steps of: and (4) magnetically stirring at normal temperature to form a clear and transparent ZnSnO precursor solution with the concentration of 0.05-0.3 mol/L.
5. The method of claim 1, wherein the field effect transistor is formed by a process comprising the steps of: in the step (5), the mass ratio of polyvinylpyrrolidone to N, N-dimethylformamide is 1: 3-7, and continuously magnetically stirring for 1-24 hours at the temperature of 20-100 ℃.
6. The method of claim 1, wherein the field effect transistor is formed by a process comprising the steps of: and (4) propelling the injection pump at the speed of 0.4-0.6 ml/h in the step (6), connecting a needle head of the injection pump with a 10-22 kV direct-current high-voltage power supply, enabling the distance between the needle head and a receiving end to be 5-20 cm, and enabling the spinning time to be 0.1-5 minutes.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101960571A (en) * | 2008-03-06 | 2011-01-26 | 佳能株式会社 | Method of treating semiconductor element |
| CN102064188A (en) * | 2009-11-11 | 2011-05-18 | 三星移动显示器株式会社 | Thin film transistor and organic light emitting display device using the same |
| CN104603323A (en) * | 2012-10-18 | 2015-05-06 | 出光兴产株式会社 | Sputtering target, oxide semiconductor thin film, and method for producing same |
| CN104916733A (en) * | 2015-05-18 | 2015-09-16 | 浙江大学 | Amorphous ZnSnO thin film transistor type ultraviolet detector and preparation method thereof |
| CN106252394A (en) * | 2016-08-30 | 2016-12-21 | 上海大学 | There is FET device of sull of the gradual active layer structure of composition and preparation method thereof |
Family Cites Families (1)
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-
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101960571A (en) * | 2008-03-06 | 2011-01-26 | 佳能株式会社 | Method of treating semiconductor element |
| CN102064188A (en) * | 2009-11-11 | 2011-05-18 | 三星移动显示器株式会社 | Thin film transistor and organic light emitting display device using the same |
| CN104603323A (en) * | 2012-10-18 | 2015-05-06 | 出光兴产株式会社 | Sputtering target, oxide semiconductor thin film, and method for producing same |
| CN104916733A (en) * | 2015-05-18 | 2015-09-16 | 浙江大学 | Amorphous ZnSnO thin film transistor type ultraviolet detector and preparation method thereof |
| CN106252394A (en) * | 2016-08-30 | 2016-12-21 | 上海大学 | There is FET device of sull of the gradual active layer structure of composition and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT;LI Jun et al.;《IEEE TRANSACTIONS ON ELECTRON DEVICES》;20171231;第64卷(第12期);4959-4964 * |
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