CN104009093A - Method for manufacturing high-k dielectric layer water-based indium oxide thin film transistors - Google Patents
Method for manufacturing high-k dielectric layer water-based indium oxide thin film transistors Download PDFInfo
- Publication number
- CN104009093A CN104009093A CN201410264881.8A CN201410264881A CN104009093A CN 104009093 A CN104009093 A CN 104009093A CN 201410264881 A CN201410264881 A CN 201410264881A CN 104009093 A CN104009093 A CN 104009093A
- Authority
- CN
- China
- Prior art keywords
- sample
- preparation
- spin coating
- thin film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 22
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 238000000137 annealing Methods 0.000 claims abstract description 36
- 230000008569 process Effects 0.000 claims abstract description 22
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000007864 aqueous solution Substances 0.000 claims abstract description 18
- 239000000243 solution Substances 0.000 claims abstract description 18
- 239000002243 precursor Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000003381 stabilizer Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 42
- 238000002360 preparation method Methods 0.000 claims description 38
- 239000010408 film Substances 0.000 claims description 32
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 28
- 238000004528 spin coating Methods 0.000 claims description 27
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000012153 distilled water Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 3
- 230000002000 scavenging effect Effects 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000002061 vacuum sublimation Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000006303 photolysis reaction Methods 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims description 2
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 229940031098 ethanolamine Drugs 0.000 abstract 1
- 238000009987 spinning Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910001449 indium ion Inorganic materials 0.000 description 1
- ZEWMZYKTKNUFEF-UHFFFAOYSA-N indium;oxozinc Chemical compound [In].[Zn]=O ZEWMZYKTKNUFEF-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Abstract
The invention belongs to the technical field of manufacturing of semiconductor thin film transistors and relates to a method for manufacturing high-k dielectric layer water-based indium oxide thin film transistors. The method includes the steps that zirconium acetylacetonate is dissolved in dimethylformamide, and ethanol amine of the same molar weight as the zirconium acetylacetonate is added as a stabilizer, so that a precursor solution is formed; a sample is obtained by coating a cleaned low-resistance silicon substrate with the precursor solution in a spinning mode, and a sample obtained after light annealing is obtained by placing the sample below a high-pressure mercury lamp for ultraviolet light treatment; a thin film sample is obtained through annealing of the sample obtained after light annealing; an In2O3 channel layer is obtained by coating the surface of the obtained thin film sample with an In2O3 aqueous solution; finally, a source electrode and a drain electrode are manufactured on the In2O3 channel layer, and then the thin film transistors can be obtained. According to the overall implementation scheme, cost is low, processes are simple, the principle is reliable, product performance is good, the manufacturing process is environmentally friendly, application prospects are wide, and a feasible plan is provided for manufacturing the high-performance thin film transistors on a large scale.
Description
Technical field:
The invention belongs to semiconductor thin-film transistor preparing technical field, relate to the transistorized preparation method of a kind of high k dielectric layer water-based indium oxide film, particularly a kind of with water-based indium oxide (In
2o
3) be channel layer and with ultra-thin zirconia (ZrO
x, 1<x<2) be the preparation method of the thin-film transistor of high k dielectric layer.
Background technology:
In recent years, thin-film transistor (Thin Film Transistor, TFT) has been brought into play important function in driven with active matrix liquid crystal display device (Active Matrix Liquid Crystal Display, AMLCD).From low temperature amorphous silicon TFT to high temperature polysilicon TFT, technology is more and more ripe, application also from can only drive LCD (Liquid Crystal Display) to develop into not only can to drive LCD but also can driving OLED (Organic Light Emitting Display), Electronic Paper even.Along with semiconductor process technology improves constantly, Pixel Dimensions constantly reduces, the resolution of display screen is also more and more higher, TFT is as driving the switch application of pixel in the display devices such as liquid crystal display (TFT-LCD), wherein the size of grid dielectric material energy gap determines the size of leakage current, and its relative dielectric constant determines the size (being energy consumption size) of device subthreshold swing.Along with the development of large scale integrated circuit, as the characteristic size of the metal oxide semiconductor transistor of si-substrate integrated circuit core devices, constantly reduce always, it reduces rule and follows Moore's Law.The current lithographic dimensioned 28nm that reached, CMOS grid equivalent oxide thickness drops to below 1nm, the thickness of gate oxide approaches atomic distance (IEEE Electron Device Lett.2004,25 (6): 408-410), along with reducing of equivalent oxide thickness, cause tunnel effect, research shows silicon dioxide (SiO
2) thickness while reducing to 1.5nm by 3.5nm grid leakage current by 10
-12a/cm
2increase to 10A/cm
2(IEEE Electron Device Lett.1997,18 (5): 209-211).Larger leakage current can cause high power consumption and corresponding heat dissipation problem, and this all causes adverse influence for device integrated level, reliability and life-span, is therefore badly in need of the high dielectric material replacement traditional Si O that research and development make new advances
2.At present, extensively adopt high-k (high k) grid dielectric to increase capacitance density and reduce grid leakage current in MOS integrated circuit technology, high k material is because of its large dielectric constant, with SiO
2there is in the situation of same equivalent gate oxide thickness (EOT) its actual Thickness Ratio SiO
2large is many, thereby has solved SiO
2the quantum tunneling effect producing because approaching the physical thickness limit.
The novel high-k dielectric material that becomes at present study hotspot comprises ATO (Advanced Material, 24,2945,2012), Al
2o
3(Nature, 489,128,2012), ZrO
2(Advanced Material, 23,971,2011), WO
3(Applied Physics Letters, 102,052905,2013) and Ta
2o
5(Applied Physics Letters, 101,261112,2012) etc.TFT device is film-type structure, and the dielectric constant of its gate dielectric layer, compactness and thickness are very large to transistorized performance impact, at numerous SiO
2in grid dielectric substitute, zirconia (ZrO
x) as high-k dielectric material, there is good reliability, it has larger dielectric constant (20-30), wider band gap (5.8eV) (Advanced Material, 23,971,2011), electronics and hole are had to proper passage barrier height (being greater than 1eV), there is good Lattice Matching with Si surface, can be compatible mutually with traditional CMOS technique.Therefore, ZrO
xbe supposed to substitute traditional grid dielectric material, become the strong candidate of the high k grid of TFT of new generation dielectric material.And, consider new direction-printing electronic device of microelectronic component development in the future, utilizing sol-gel technique to prepare film will be a well selection, sol-gel technique is subject to extensive use in the preparation technology of superfines, film coating, fiber and other material, it has advantages of that it is unique: in its reaction each component be blended in intermolecular carrying out, thereby the particle diameter of product is little, uniformity is high; Course of reaction is easy to control, and can obtain the product that some are difficult to obtain with additive method, and reaction is carried out at low temperatures in addition, has avoided the appearance of high temperature dephasign, makes the purity of product high.Therefore adopt sol-gel technique to prepare ZrO
xhigh k dielectric film, proposes the way that a kind of employing ultraviolet light decomposes and low temperature (300 ℃) thermal decomposition combines and decomposes ZrO
xorganic principle in film, the principle that wherein ultraviolet light decomposes is: utilize ultraviolet UVC (200-275nm) and UVD wave band (100-200nm) and airborne oxygen reaction generation active oxygen, have the active oxygen of strong oxidizing property can be at room temperature with film in C, N element reaction generation Co
x, NO
xthereby gas departs from film; Simultaneously, ultraviolet light decomposition method can improve film sample surface state (Applied Physics Letters, 102,192101,2013), make sample surfaces finer and close, level and smooth, the less roughness in gate dielectric layer surface is conducive to charge carrier in surperficial migration, improves carrier mobility and the switching response speed of TFT device.In addition, following adopted low temperature thermal decomposition is processed ZrO
xthe interlayer that film can effectively be avoided bringing in semiconductor channel layer process annealing (<300 ℃) the process phenomenon of dissolving each other; In the preparation process of channel layer, adopt distilled water to substitute traditional organic solution (EGME etc.) as solvent, form novel aqueous solution, aqueous solution has the advantages such as nontoxic, environmental protection, cheapness than conventional organic solution; In addition owing to being electrostatical binding between solute cation and hydrone in aqueous solution, than covalent bonds mode in organic solution, there is more weak combination energy, therefore adopt the film of aqueous solution method spin coating to there is lower decomposition temperature, utilize aqueous solution technology to prepare that reliability is high, reproducible, the semiconductive thin film of low-temperature decomposition is just becoming the technical field that industrial quarters and scientific research circle are being furtherd investigate.
At present, adopt amorphous oxides indium zinc oxygen (IZO), indium gallium zinc oxygen (IGZO), indium oxide (In
2o
3) material is as the preparation of thin film transistor channel layer and the existing open source literature of application technology, large quantity research has been done by the states such as Japan and Korea S..In
2o
3rely on its high mobility (>100cm
2/ Vs), high permeability (visible ray >80%) becomes the strong candidate (IEEE Electron Device Lett.31,567,2010) of semiconductor channel layer material.We consult by Patents, document, utilize aqueous solution method to prepare TFT channel layer and rarely have report, based on ultra-thin ZrO
xthe water-based In of high k dielectric layer
2o
3nobody sets foot in TFT especially.Consider the requirement of future " flexible display device " to low temperature in thin film preparation process process, we guarantee in TFT preparation process that temperature is lower than 300 ℃.In prepared by above-mentioned technique
2o
3/ ZrO
xthe TFT device of structure not only has higher carrier mobility, and thering is the feature (being greater than 80% in visible light wave range transmitance) of the high grade of transparency, its TFT, as the pixel switch of AMLCD, will improve the aperture opening ratio of active matrix greatly, improve brightness, reduce power consumption simultaneously; Its whole soln preparation technology does not rely on expensive vacuum coating equipment in addition, and cost of manufacture is further reduced, and these advantages make its transparent electron display device field in future have very wide potential market.
Summary of the invention:
The object of the invention is to overcome the shortcoming that prior art exists, seek design and provide a kind of with ultra-thin zirconia (ZrO
x) be high k dielectric layer and with water-based indium oxide (In
2o
3) be the transistorized preparation method of high performance thin film of channel layer, first select low-resistance silicon as substrate and gate electrode, the mode that adopts sol-gel technique, photo-annealing and Low Temperature Thermal annealing to combine is prepared ultra-thin ZrO
x(<10nm) gate dielectric layer; Adopt again aqueous solution method low temperature to prepare the In of high permeability, high mobility
2o
3semiconductor channel layer, thus be prepared into high performance thin-film transistor, and its electric property meets the requirement of display to thin-film transistor (TFT) completely.
To achieve these goals, the present invention specifically comprises following processing step:
(1), the preparation of precursor solution: by acetylacetone,2,4-pentanedione zirconium Zr (C
5h
7o
2)
4be dissolved in dimethyl formamide, add with the monoethanolamine of acetylacetone,2,4-pentanedione zirconium equimolar amounts as stabilizer the molar content [Zr of zirconium simultaneously
4+] be 0.01-0.9; The volume ratio of monoethanolamine and dimethyl formamide is 1:1-10; At 20-100 ℃ of lower magnetic force, stir the precursor solution that forms clear for 1-24 hour, wherein zirconia precursor solution concentration is 0.01-0.5M;
(2), the preparation of film sample: using plasma cleaning method cleans low-resistance surface of silicon, on low-resistance silicon substrate after cleaning, adopt the precursor solution of conventional sol-gel technique spin coating step (1) preparation to obtain sample, after spin coating finishes, sample is put into and under high-pressure mercury lamp, carries out ultraviolet lighting and process and obtain the sample after photo-annealing, make sample realize photodissociation and curing object; The sample after photo-annealing is carried out to 300 ℃ of process annealing 1-3 hour, the interlayer of avoiding semiconductor channel layer process annealing process the to bring phenomenon of dissolving each other, obtains film sample again;
(3), In
2o
3the preparation of channel layer: by indium nitrate In (NO
3)
3be dissolved in distilled water the In that the concentration that at room temperature stirs 1-24 hour formation clear is 0.1-0.3mol/L
2o
3aqueous solution; Then the film sample surface obtaining in step (2) utilizes sol-gel technique to adopt commercially available sol evenning machine spin coating In
2o
3aqueous solution, first even glue 4-8 second under 400-600 rev/min, then under 2000-4000 rev/min even glue 15-30 second, spin coating number of times is 1-3 time, at every turn spin coating thickness 5-10nm; Film sample after spin coating is put into 120-150 ℃ burned and is cured and puts into Muffle furnace after processing and carry out 200-300 ℃ of process annealing and process 1-3 hour, make In
2o
3thickness is the In of 5-30nm
2o
3film, prepares In
2o
3channel layer;
(4), the preparation of source, drain electrode: utilize conventional Vacuum sublimation to utilize stainless steel mask plate at In
2o
3preparation source, drain electrode above channel layer, obtain based on ultra-thin ZrO
xthe water-based In of high k dielectric layer
2o
3thin-film transistor.
The plasma clean method relating in step of the present invention (2) adopts oxygen or argon gas as purge gas, and its power is 20-60Watt, and scavenging period is 20-200s, and the intake of working gas is 20-50 SCCM; When preparing film sample, use sol evenning machine spin coating, first even glue 4-8 second under 400-600 rev/min, then under 3000-6000 rev/min even glue 15-25 second; Spin coating number of times is 1-5 time, and the film thickness of each spin coating is 4-8nm; The power of high-pressure mercury lamp is 1-2KW, and the dominant wavelength of ultraviolet light is 365nm, and light application time is 20-40 minute, high-pressure mercury lamp light source distance sample surfaces 5-100cm.
The electrode raceway groove length-width ratio of thin-film transistor prepared by step of the present invention (4) is 1:4-20, and thermal evaporation electric current is 30-50A; The source making, leak electricity very metal A l or Au electrode, thickness of electrode is 50-200nm.
The present invention compared with prior art, there is following advantage: the one, the semiconductor channel layer in thin-film transistor and high k dielectric layer all utilize chemical solution method to prepare, and chemical solution system is very cheap, and its preparation process does not need high vacuum environment, in air, can carry out, reduce costs; Reaction can be carried out at low temperatures, avoids the appearance of high temperature dephasign when reducing costs; The 2nd, using plasma cleans substrate surface, and while increasing spin coating, precursor solution, with the adhesive force of substrate, makes film sample surface after spin coating homogeneous and smooth more; The 3rd, the mode that adopts ultraviolet light photo-annealing and Low Temperature Thermal annealing to combine obtains densification, novel novel grid dielectric material ZrO
x, avoid traditional sol-gel film-forming process for the demand of high temperature (>500 ℃), make the ZrO of preparation
xdielectric layer can be prepared in plastic, for important foundation is established in application flexible, transparent display part; The 4th, the ZrO making
xthe physical thickness of high k gate dielectric layer is only 10nm, and the low-leakage current simultaneously having meets the integrated demand for device size of microelectronics well; ZrO
xthe high permeability that film itself has (visible light wave range approaches 90%), meets the requirement of transparent electronics to material self; The ZrO making
xfilm is amorphous state, can realize large area industry preparation; The 5th, in thin-film transistor, semiconductor channel layer utilizes the preparation of aqueous solution method.Utilize distilled water than conventional organic solvents, to there is the advantages such as nontoxic, environmental protection as solvent phase; Meanwhile, aqueous solution is less demanding to ambient humidity, therefore further reduces preparation cost; Finally, because distilled water does not have corrosivity, when dripping to ZrO
xin the time of on gate dielectric layer, can not corrode ZrO
xsurface, is therefore beneficial to formation interface more clearly, and this is most important for TFT device performance high-performance electricity performance; The 6th, utilize aqueous solution to prepare In
2o
3the high permeability that semiconductive thin film itself has (visible light wave range is greater than 80%), meets the requirement of transparent electronics; Its low temperature (<300 ℃) preparation condition is compatible mutually with the low temperature manufacturing technology that flat panel display requires simultaneously; Its General Implementing scheme cost is low, and technique is simple, and principle is reliable, good product performance, and preparation environmental friendliness, has a extensive future, and for large area, preparing high performance thin-film transistor provides feasible scheme.
Accompanying drawing explanation:
Fig. 1 be the present invention prepare based on ZrO
xthe water-based In of high k dielectric layer
2o
3the structural principle schematic diagram of thin-film transistor.
Fig. 2 is that the thin-film transistor prepared of the present invention is at different I n
2o
3output characteristic curve figure during annealing temperature, wherein grid bias V
gS=1.5V, the In of curve a
2o
3annealing temperature is 200 ℃; The In of curve b
2o
3annealing temperature is 230 ℃; The In of curve c
2o
3annealing temperature is In
2o
3-250 ℃; The In of curve d
2o
3annealing temperature is In
2o
3-270 ℃.
Fig. 3 is that the thin-film transistor prepared of the present invention is at different I n
2o
3transfer characteristic curve figure during annealing temperature, wherein source-drain voltage V
dS=1.0V, the In of curve a
2o
3annealing temperature is 200 ℃; The In of curve b
2o
3annealing temperature is 230 ℃; The In of curve c
2o
3annealing temperature is In
2o
3-250 ℃; The In of curve d
2o
3annealing temperature is In
2o
3-270 ℃.
Embodiment:
Below by specific embodiment, also further illustrate by reference to the accompanying drawings the present invention.
Embodiment:
Acetylacetone,2,4-pentanedione zirconium in the present embodiment and indium nitrate powder, dimethyl formamide, monoethanolamine organic solvent are all purchased from Aladdin company, and purity is greater than 98%; Its bottom grating structure is with ultra-thin zirconia (ZrO
x) be high k dielectric layer and with water-based indium oxide (In
2o
3) preparation process of the film thin-film transistor that is channel layer is:
(1) first adopt sol-gel technique to prepare ultra-thin ZrO
xhigh k dielectric film:
Step 1: select the single-sided polishing low-resistance silicon of business purchase as substrate (ρ <0.0015 Ω cm) and gate electrode, low-resistance silicon substrate is used hydrofluoric acid, acetone, alcohol Ultrasonic Cleaning substrate respectively 10 minutes successively, after repeatedly rinsing with deionized water, high pure nitrogen dries up;
Step 2: dimethyl formamide and monoethanolamine are configured to mixed solution according to mol ratio 2:1, acetylacetone,2,4-pentanedione zirconium is dissolved in this mixed solution according to 0.1M, weigh mixed solution 10mL, taking acetylacetone,2,4-pentanedione zirconium is 0.48g, and after mixing, under the effect of magnetic agitation, 70 ℃ of water-baths are stirred and within 3 hours, formed clarification, transparent precursor liquid;
Step 3: clean low-resistance silicon substrate is put into plasma clean chamber, extract to 0.5Pa and pass into high-purity (99.99%) oxygen until chamber, controlling its power is 30Watt, and scavenging period is 120s, and during work, the intake of oxygen is 30SCCM;
Step 4: preparation ZrO
xsample: the precursor solution of preparation in step 2 is spin-coated on the low-resistance silicon substrate cleaning, and spin coating number of times is 1～5 time, and during spin coating precursor solution, the parameter of sol evenning machine is set to: elder generation is in 500 revs/min of even glue 5 seconds, then in 5000 revs/min of even glue 25 seconds; After spin coating finishes, sample is put under high-pressure mercury lamp and carries out ultraviolet light polymerization processing, high-pressure mercury lamp power is 1KW, and dominant wavelength is UVC and UVD, and the uv-exposure time is 30 minutes, and mercury lamp light source is apart from sample surfaces 10cm, by the ZrO solidifying after processing
xsample is put into Muffle furnace process annealing and is processed, and annealing temperature is 300 ℃, and annealing time 1 hour, obtains ZrO
xsample;
(2) utilize In
2o
3in is prepared in aqueous solution spin coating
2o
3channel layer:
Step 1: indium nitrate powder is dissolved in distilled water, and indium ion concentration is 0.1M; In this experiment, weigh distilled water 10mL, taking indium nitrate is 0.3g, after mixing, under the effect of magnetic agitation, stirring at room forms the In of clear for 12 hours
2o
3aqueous solution;
Step 2: preparation In
2o
3channel layer: by the In of preparation in step 1
2o
3aqueous solution is spin-coated on the ZrO processing
xon sample, during spin coating, the parameter of sol evenning machine is set to: first in 500 revs/min of even glue 5 seconds, then in 3000 revs/min of even glue 25 seconds, after spin coating finishes, sample is put into Muffle furnace process annealing and process, annealing temperature is for being respectively 200,230,250,270 ℃, annealing time 1 hour;
(3) adopt Vacuum sublimation to prepare source, leak metal electrode:
By the mode of thermal evaporation, at In
2o
3on channel layer, with the stainless steel mask plate that breadth length ratio is 1000/100 μ m, prepare metal A l that 100nm is thick as source, drain electrode, thermal evaporation electric current is 40A, prepares Al/In
2o
3/ ZrO
xthe thin-film transistor of/Si structure;
(4) to the Al/In making
2o
3/ ZrO
xthe thin-film transistor of/Si structure (Fig. 1) is tested; At different I n
2o
3thin-film transistor output characteristic curve under annealing temperature condition utilizes the test of Keithley 2634B semiconductor source table to obtain (Fig. 2); The transfer characteristic curve (Fig. 3) corresponding to thin-film transistor of preparation utilizes Keithley 2634B semiconductor source table test to obtain equally, wherein with the In of 200,230,250,270 ℃ of annealing in process
2o
3for a, b, c, d in the transfer characteristic curve difference corresponding diagram 3 of channel layer TFT.
Claims (3)
1. the transistorized preparation method of high k dielectric layer water-based indium oxide film, is characterized in that specifically comprising following processing step:
(1), the preparation of precursor solution: by acetylacetone,2,4-pentanedione zirconium Zr (C
5h
7o
2)
4be dissolved in dimethyl formamide, add with the monoethanolamine of acetylacetone,2,4-pentanedione zirconium equimolar amounts as stabilizer simultaneously, stir the precursor solution that forms clear for 1-24 hour at 20-100 ℃ of lower magnetic force, wherein zirconia precursor solution concentration is 0.01-0.5M, zirconium Zr
4+molar content be 0.01-0.9; The volume ratio of monoethanolamine and dimethyl formamide is 1:1-10;
(2), the preparation of film sample: using plasma cleaning method cleans low-resistance surface of silicon, on low-resistance silicon substrate after cleaning, adopt the precursor solution of conventional sol-gel technique spin coating step (1) preparation to obtain sample, after spin coating finishes, sample is put into and under high-pressure mercury lamp, carries out ultraviolet lighting and process and obtain the sample after photo-annealing, realize the photodissociation of sample and solidify; The sample after photo-annealing is carried out to 300 ℃ of process annealing 1-3 hour, the interlayer of avoiding semiconductor channel layer process annealing process the to bring phenomenon of dissolving each other, obtains film sample again;
(3), In
2o
3the preparation of channel layer: by indium nitrate In (NO
3)
3be dissolved in distilled water the In that the concentration that at room temperature stirs 1-24 hour formation clear is 0.1-0.3mol/L
2o
3aqueous solution; Then the film sample surface obtaining in step (2) utilizes sol-gel technique to adopt commercially available sol evenning machine spin coating In
2o
3aqueous solution, first even glue 4-8 second under 400-600 rev/min, then under 2000-4000 rev/min even glue 15-30 second, spin coating number of times is 1-3 time, at every turn spin coating thickness 5-10nm; Film sample after spin coating is put into 120-150 ℃ burned and is cured and puts into Muffle furnace after processing and carry out 200-300 ℃ of process annealing and process 1-3 hour, make In
2o
3thickness is the In of 5-30nm
2o
3film, prepares In
2o
3channel layer;
(4), the preparation of source, drain electrode: utilize conventional Vacuum sublimation to utilize stainless steel mask plate at In
2o
3preparation source, drain electrode above channel layer, obtain based on ultra-thin ZrO
xthe water-based In of high k dielectric layer
2o
3thin-film transistor.
2. the transistorized preparation method of high k dielectric layer water-based indium oxide film according to claim 1, it is characterized in that the plasma clean method relating in step (2) adopts oxygen or argon gas as purge gas, its power is 20-60Watt, scavenging period is 20-200s, and the intake of working gas is 20-50SCCM; When preparing film sample, use sol evenning machine spin coating, first even glue 4-8 second under 400-600 rev/min, then under 3000-6000 rev/min even glue 15-25 second; Spin coating number of times is 1-5 time, and the film thickness of each spin coating is 4-8nm; The power of high-pressure mercury lamp is 1-2KW, and the dominant wavelength of ultraviolet light is 365nm, and light application time is 20-40 minute, high-pressure mercury lamp light source distance sample surfaces 5-100cm.
3. the transistorized preparation method of high k dielectric layer water-based indium oxide film according to claim 1, is characterized in that the electrode raceway groove length-width ratio of thin-film transistor prepared by step (4) is 1:4-20, and thermal evaporation electric current is 30-50A; The source making, leak electricity very metal A l or Au electrode, thickness of electrode is 50-200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410264881.8A CN104009093B (en) | 2014-06-13 | 2014-06-13 | A kind of preparation method of high k dielectric layer aqueous indium oxide film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410264881.8A CN104009093B (en) | 2014-06-13 | 2014-06-13 | A kind of preparation method of high k dielectric layer aqueous indium oxide film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104009093A true CN104009093A (en) | 2014-08-27 |
| CN104009093B CN104009093B (en) | 2016-08-31 |
Family
ID=51369675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410264881.8A Expired - Fee Related CN104009093B (en) | 2014-06-13 | 2014-06-13 | A kind of preparation method of high k dielectric layer aqueous indium oxide film transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104009093B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201112A (en) * | 2014-09-28 | 2014-12-10 | 青岛大学 | Preparation method for water solution thin film transistor |
| CN104485283A (en) * | 2014-09-10 | 2015-04-01 | 友达光电股份有限公司 | Method of manufacturing thin film transistor and apparatus for manufacturing thin film transistor |
| CN104934327A (en) * | 2015-05-20 | 2015-09-23 | 青岛大学 | Method for preparing thin-film transistor based on scandia high-k dielectric layer |
| CN104945962A (en) * | 2015-05-13 | 2015-09-30 | 上海交通大学 | Metal oxide protective film and preparation method thereof |
| CN105428247A (en) * | 2016-01-18 | 2016-03-23 | 青岛大学 | Preparation method of thin film transistor based on water-based ultrathin ZrO2 high k dielectric layer |
| CN105489770A (en) * | 2016-01-08 | 2016-04-13 | 武汉大学 | Indium oxide electronic transmission layer planar perovskite photovoltaic battery and preparation method therefor |
| CN105489486A (en) * | 2016-01-18 | 2016-04-13 | 青岛大学 | Method for preparing thin-film transistor based on ultra-thin magnesium oxide high-k dielectric layer |
| CN105552130A (en) * | 2016-01-18 | 2016-05-04 | 青岛大学 | Preparation method for thin film transistor based on ultra-thin Li2O high-k dielectric layer |
| CN106431397A (en) * | 2016-09-14 | 2017-02-22 | 齐鲁工业大学 | Low-temperature solution preparation method of high-dielectric zirconium oxide thin film |
| CN106783564A (en) * | 2016-09-14 | 2017-05-31 | 齐鲁工业大学 | A kind of cryogenic fluid preparation method of indium oxide transparent semiconductor film |
| CN108232013A (en) * | 2017-11-29 | 2018-06-29 | 华南师范大学 | The method for preparing zirconia film and flexible transistor |
| CN108493098A (en) * | 2018-04-17 | 2018-09-04 | 南京邮电大学 | Preparation method based on low temperature solution polycondensation p-type metal iodine compound film transistor |
| CN110517958A (en) * | 2019-08-09 | 2019-11-29 | 中山大学 | A kind of preparation method of oxide thin film transistor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050051770A1 (en) * | 2003-09-04 | 2005-03-10 | Hitachi, Ltd. | Electrode substrate, thin film transistor, display device and their production |
| CN101290883A (en) * | 2008-05-29 | 2008-10-22 | 南京大学 | Soft chemistry method for preparing ultrathin HfO* or ZrO* gate dielectric membrane |
| JP2009267192A (en) * | 2008-04-28 | 2009-11-12 | Mitsubishi Electric Corp | Manufacturing method for semiconductor device and semiconductor manufacturing device |
| EP2339638A1 (en) * | 2009-12-24 | 2011-06-29 | Samsung Electronics Co., Ltd. | Transistor |
| CN103779427A (en) * | 2014-02-26 | 2014-05-07 | 华南理工大学 | Oxide thin film transistor and preparation method thereof |
-
2014
- 2014-06-13 CN CN201410264881.8A patent/CN104009093B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050051770A1 (en) * | 2003-09-04 | 2005-03-10 | Hitachi, Ltd. | Electrode substrate, thin film transistor, display device and their production |
| JP2009267192A (en) * | 2008-04-28 | 2009-11-12 | Mitsubishi Electric Corp | Manufacturing method for semiconductor device and semiconductor manufacturing device |
| CN101290883A (en) * | 2008-05-29 | 2008-10-22 | 南京大学 | Soft chemistry method for preparing ultrathin HfO* or ZrO* gate dielectric membrane |
| EP2339638A1 (en) * | 2009-12-24 | 2011-06-29 | Samsung Electronics Co., Ltd. | Transistor |
| CN103779427A (en) * | 2014-02-26 | 2014-05-07 | 华南理工大学 | Oxide thin film transistor and preparation method thereof |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485283B (en) * | 2014-09-10 | 2017-08-15 | 友达光电股份有限公司 | Method of manufacturing thin film transistor and apparatus for manufacturing thin film transistor |
| CN104485283A (en) * | 2014-09-10 | 2015-04-01 | 友达光电股份有限公司 | Method of manufacturing thin film transistor and apparatus for manufacturing thin film transistor |
| CN104201112A (en) * | 2014-09-28 | 2014-12-10 | 青岛大学 | Preparation method for water solution thin film transistor |
| CN104945962A (en) * | 2015-05-13 | 2015-09-30 | 上海交通大学 | Metal oxide protective film and preparation method thereof |
| CN104934327A (en) * | 2015-05-20 | 2015-09-23 | 青岛大学 | Method for preparing thin-film transistor based on scandia high-k dielectric layer |
| CN105489770A (en) * | 2016-01-08 | 2016-04-13 | 武汉大学 | Indium oxide electronic transmission layer planar perovskite photovoltaic battery and preparation method therefor |
| CN105552130B (en) * | 2016-01-18 | 2018-08-10 | 青岛大学 | A kind of preparation method based on the high k dielectric layer thin film transistor (TFT) of ultra-thin lithia |
| CN105552130A (en) * | 2016-01-18 | 2016-05-04 | 青岛大学 | Preparation method for thin film transistor based on ultra-thin Li2O high-k dielectric layer |
| CN105489486A (en) * | 2016-01-18 | 2016-04-13 | 青岛大学 | Method for preparing thin-film transistor based on ultra-thin magnesium oxide high-k dielectric layer |
| CN105428247A (en) * | 2016-01-18 | 2016-03-23 | 青岛大学 | Preparation method of thin film transistor based on water-based ultrathin ZrO2 high k dielectric layer |
| CN105428247B (en) * | 2016-01-18 | 2018-08-10 | 青岛大学 | One kind being based on aqueous ultra-thin ZrO2The film crystal tube preparation method of high k dielectric layer |
| CN106431397A (en) * | 2016-09-14 | 2017-02-22 | 齐鲁工业大学 | Low-temperature solution preparation method of high-dielectric zirconium oxide thin film |
| CN106783564A (en) * | 2016-09-14 | 2017-05-31 | 齐鲁工业大学 | A kind of cryogenic fluid preparation method of indium oxide transparent semiconductor film |
| CN108232013A (en) * | 2017-11-29 | 2018-06-29 | 华南师范大学 | The method for preparing zirconia film and flexible transistor |
| CN108232013B (en) * | 2017-11-29 | 2019-12-03 | 华南师范大学 | The method for preparing zirconia film and flexible transistor |
| CN108493098A (en) * | 2018-04-17 | 2018-09-04 | 南京邮电大学 | Preparation method based on low temperature solution polycondensation p-type metal iodine compound film transistor |
| CN110517958A (en) * | 2019-08-09 | 2019-11-29 | 中山大学 | A kind of preparation method of oxide thin film transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104009093B (en) | 2016-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104009093A (en) | Method for manufacturing high-k dielectric layer water-based indium oxide thin film transistors | |
| CN104201112A (en) | Preparation method for water solution thin film transistor | |
| CN105489486A (en) | Method for preparing thin-film transistor based on ultra-thin magnesium oxide high-k dielectric layer | |
| CN105428247B (en) | One kind being based on aqueous ultra-thin ZrO2The film crystal tube preparation method of high k dielectric layer | |
| Jeong et al. | Photo-patternable ZnO thin films based on cross-linked zinc acrylate for organic/inorganic hybrid complementary inverters | |
| CN103928350B (en) | The transistorized preparation method of a kind of double channel layer film | |
| US10032923B2 (en) | Metal oxide thin film, method for manufacturing the same, and solution for metal oxide thin film | |
| CN106025067A (en) | Method for generating perovskite film through solution method and device application thereof | |
| Jiang et al. | High carrier mobility low-voltage ZnO thin film transistors fabricated at a low temperature via solution processing | |
| Park et al. | Significant performance improvement of solution-processed metal oxide transistors by ligand dissociation through coupled temperature–time treatment of aqueous precursors | |
| CN101388335A (en) | Preparation for ferroelectric material of quartz/lanthanum nickelate/bismuth ferrite-lead titanate | |
| Zhang et al. | Balanced performance improvement of a-InGaZnO thin-film transistors using ALD-derived Al2O3-passivated high-k HfGdOx dielectrics | |
| CN103022077B (en) | A kind of OLED device of oxycompound thin-film transistor | |
| CN104934327A (en) | Method for preparing thin-film transistor based on scandia high-k dielectric layer | |
| Lee et al. | Enhancement of the electrical performance and bias stability of RF-sputtered indium tin zinc oxide thin-film transistors with vertical stoichiometric oxygen control | |
| Zhu et al. | Water-derived all-oxide thin-film transistors with ZrAlO x gate dielectrics and exploration in digital circuits | |
| Shan et al. | Multi-stacking indium zinc oxide thin-film transistors post-annealed by femtosecond laser | |
| CN108417495A (en) | A kind of preparation of the thin film transistor (TFT) of metal oxide passivation | |
| CN106952828A (en) | A kind of preparation method of p-type metal oxide thin-film transistor | |
| CN108987469B (en) | Amorphous ZnMgSnO thin film and thin film transistor and preparation method thereof | |
| CN106410041B (en) | Polymer solar battery and preparation method | |
| CN108493098A (en) | Preparation method based on low temperature solution polycondensation p-type metal iodine compound film transistor | |
| CN105742188B (en) | Method for preparing p-type oxide thin film material by polyol reduction technology | |
| WO2017143626A1 (en) | Preparation method for oxide thin film, and thin film transistor | |
| CN103346264A (en) | Nano-zinc oxide film preparation method and organic solar cell preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160831 Termination date: 20210613 |