CN101290883A - Soft chemistry method for preparing ultrathin HfO* or ZrO* gate dielectric membrane - Google Patents

Soft chemistry method for preparing ultrathin HfO* or ZrO* gate dielectric membrane Download PDF

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CN101290883A
CN101290883A CNA2008101236798A CN200810123679A CN101290883A CN 101290883 A CN101290883 A CN 101290883A CN A2008101236798 A CNA2008101236798 A CN A2008101236798A CN 200810123679 A CN200810123679 A CN 200810123679A CN 101290883 A CN101290883 A CN 101290883A
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CN100543941C (en
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龚佑品
李爱东
钱旭
吴迪
闵乃本
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Nanjing University
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Abstract

The invention discloses a soft chemical method for making an ultrathin HfO2 or ZrO2 gate dielectric membrane. The method successfully prepares HfCl4 or ZrCl4 precursor sol with better stability and evenness through a simple and feasible technological line; moreover, the sol has longer storage life; an ultrathin HfO2 or ZrO2 membrane with a leveling-off surface is made on a Si substrate through adopting the precursor sol and the soft chemical method under room temperature; and a gate dielectric membrane with excellent electrical properties is obtained through post annealing. The method has simple making process and low cost and has superiority in the micro-electronic field, thereby having important application prospects.

Description

The ultra-thin HfO of a kind of preparation 2Or ZrO 2The soft chemical method of gate dielectric membrane
One, technical field
The present invention relates to a kind of preparation ultra-thin metal oxide (HfO 2Or ZrO 2) method of gate dielectric membrane, specifically be that a kind of employing soft chemical method prepares above-mentioned ultra-thin HfO 2Or ZrO 2The method of gate dielectric membrane.
Two, background technology
Along with developing rapidly of semiconductor technology, just according to Moore's Law, constantly dwindle as the characteristic size of the Metal-oxide-semicondutor field effect transistor (MOSFETs) of silica-based microelectronics core devices.But, traditional SiO 2Gate dielectric material can't overcome the influence that the MOSFET device feature size dwindles the quantum tunneling effect that is brought, and works as SiO 2Thickness when being reduced to 1nm, grid leakage current increases rapidly, can cause device reliability to worsen, can't operate as normal.In order further to improve the integrated level of microelectronic component, must consider to substitute traditional SiO with having high-k (high-k) gate dielectric material 2Layer.Hafnium oxide, zirconia film have bigger dielectric constant (k=20～25) and energy gap (Eg～5.6eV) and the thermodynamic stability of the excellence that contacts with Si, therefore becoming one of most promising candidate material of grid medium with high dielectric of future generation, also is the focus of current high-k investigation of materials.
So-called soft chemical method (soft chemical method) is meant the liquid-phase mixing by reaction raw materials, makes the metallic element high degree of dispersion under lower reaction temperature and relatively mild chemical environment, carries out the method that chemical reaction prepares material step by step.As sol-gel (Sol-Gel) process of synthesizing inorganic pottery, glass material under the normal temperature and pressure, low temperature liquid phase prepared in reaction nano structural material etc. all belong to softening method.But in general sol-gel process, metal precursor colloidal sol generally adopts metal alkoxide, its process for preparation is complicated and unstable, hydrolysis easily, and be difficult to find most suitable solvent to make more evenly dispersion, stable sols, influenced the industrial applications of the method.
Three, summary of the invention
Technical problem to be solved by this invention provides a kind of special sol-gel (Sol-Gel) method and comes depositing ultrathin metal oxide (HfO 2Or ZrO 2) method of gate dielectric membrane.Preparation technology is simple for this method, and is with low cost.
For achieving the above object, the ultra-thin HfO of preparation of the present invention 2Or ZrO 2The soft chemical method of gate dielectric membrane mainly comprises following three steps
(1) HfCl 4(or ZrCl 4) preparing process of colloidal sol
Synthesis material: anhydrous hafnium tetrachloride (HfCl 4) or anhydrous zirconium chloride (ZrCl 4); Absolute ethyl alcohol (ethanol); Acetylacetone,2,4-pentanedione (acetylacetone).
Stable HfCl 4(or ZrCl) colloidal sol synthesis technique: synthesis process flow diagram as shown in Figure 1, whole process for preparation carries out in the hand of nitrogen atmosphere behaviour case, to avoid the moisture in the environment.Get the anhydrous HfCl of 0.005～0.02mol 4(or anhydrous ZrCl 4) powder dissolves in 20～40ml absolute ethyl alcohol, stir it is dissolved fully; 3～6ml acetylacetone,2,4-pentanedione and 10～20ml absolute ethyl alcohol are mixed.Above two kinds of solution are mixed, take out the solution for preparing then from hand behaviour case, at room temperature magnetic agitation is 4～7 hours, obtains the stable HfCl that concentration is about 0.1～0.4mol/l 4(or ZrCl 4) colloidal sol.
(2) Si substrate processing technology
After the cleaning of monocrystalline substrate usefulness standard RCA semiconductor cleaning, hydrofluoric acid (HF) solution (volume ratio of hydrofluoric acid and deionized water is 1: 8～10) with dilution at room temperature soaked 3～6 minutes again, remove the oxide skin(coating) on monocrystalline substrate surface, because the corrosion of hydrofluoric acid, this moment, the Si substrate surface hung hydrogen bond, was hydrophobicity; At last this Si substrate is put into the hydrogen peroxide (H of 50～80 ℃ 30% weight ratio 2O 2) in sonicated 8～15 minutes.At this moment, the Si substrate surface evenly hangs hydroxyl and (OH), is total hydrophilic.
(3) thin film preparation process:
Its process chart is (ZrO as shown in Figure 2 2Deposition process similarly), this process all can be in air, finish under the room temperature, have four steps: (1) surface is from limiting chemisorbed: the Si substrate is immersed the above-mentioned HfCl for preparing 4Or ZrCl 4Kept in the colloidal sol 3～5 minutes, and made it saturated absorption; (2) flushing: from colloidal sol, take out the Si substrate, clean the surface with absolute ethyl alcohol; (3) hydrolysis: the sample of cleaning is put into deionized water soaked 3～5 minutes, fully hydrolysis generates HfO 2Or ZrO 2(4) dry up: with high pure nitrogen (N 2) dry up sample surfaces.Circulate above step 8～50 time make HfO 2Or ZrO 2Film, afterwards in 400～800 ℃ in nitrogen atmosphere short annealing obtained finished product in 3～5 minutes.
Basic principle of the present invention is: utilize metal chloride colloidal sol that adsorption reaction takes place on hydrophilic substrate, thereby realize the even growth of metal-oxide film.Its technical process is divided into following four steps: 1. the chemisorbed of substrate surface; 2. clean; 3. hydrolysis; 4. dry up.Through research, other masking technique of comparing finds that this method is a kind of more superior chemical method, because it can at room temperature utilize simple equipment, prepares ultra-thin film in large area.
The present invention adopts the technology of simple possible, has successfully prepared to can be used for soft chemical method and prepare ultra-thin HfO 2Or ZrO 2Precursor colloidal sol, and successfully prepared HfO with soft chemical method 2Or ZrO 2Gate dielectric layer.Technology of the present invention is simple, neither need carry out in special environment such as vacuum and high temperature, does not also need expensive equipment, and operability is very strong, and is with low cost, and can select suitable cycle-index, prepares the ultra-thin HfO of different-thickness 2Or ZrO 2Film.The present invention obtains the gate dielectric membrane of equivalent oxide thickness (EOT)＜1 nanometer by optimal preparation technology, and it has a good application prospect in microelectronics industry.
Four, description of drawings
Fig. 1 is HfCl 4(ZrCl 4) synthesis process flow diagram of colloidal sol;
Fig. 2 is that soft chemical method prepares HfO 2The process chart of film;
Fig. 3 is HfO 2The AFM figure of film.Thin film deposition circulation 50 times, afterwards in 500 ℃ AN 5 minutes.RMS＝1.100nm；
Fig. 4 is HfO 2The x-ray photoelectron power spectrum of film.Thin film deposition circulation 50 times, afterwards in 500 ℃ AN 5 minutes, (a) Hf4f wherein, (b) O1s, (c) Si2p;
Fig. 5 is HfO 2Electric capacity-the bias voltage of film (C-V) and leakage current density-bias voltage (J A-V) characteristic curve.Thin film deposition circulation 50 times, afterwards in 500 ℃ AN 5 minutes;
Fig. 6 is HfO 2The AFM figure of film.Thin film deposition circulation 8 times, afterwards in 800 ℃ AN 5 minutes.RMS＝1.111nm；
Fig. 7 is HfO 2The x-ray photoelectron power spectrum of film.Thin film deposition circulation 8 times, afterwards in 800 ℃ AN 5 minutes, (a) Hf4f wherein, (b) O1s, (c) Si2p;
Fig. 8 is HfO 2Electric capacity-the bias voltage of film (C-V) and leakage current density-bias voltage (J A-V) characteristic curve.Thin film deposition circulation 8 times, afterwards in 800 ℃ AN 5 minutes;
Fig. 9 HfO 2Electric capacity-the bias voltage of film (C-V) and leakage current density-bias voltage (J A-V) characteristic curve.Thin film deposition circulation 35 times, afterwards in 800 ℃ AN 3 minutes;
Figure 10 is ZrO 2The x-ray photoelectron power spectrum of film.Thin film deposition circulation 30 times, afterwards in 500 ℃ AN 5 minutes, (a) Zr3d wherein, (b) O1s, (c) Si2p.
Five, embodiment
Relevant HfO 23 examples of implementation of film:
Embodiment 1:
(1) HfCl 4The preparation of colloidal sol:
In the hand behaviour case of nitrogen atmosphere, get the anhydrous HfCl of 0.01mol 4Powder dissolves in the 30ml absolute ethyl alcohol, stirs it is dissolved fully; 5ml acetylacetone,2,4-pentanedione and 15ml absolute ethyl alcohol are mixed, then above two kinds of solution are mixed; Take out the solution for preparing then from hand behaviour case, at room temperature magnetic agitation is 4～7 hours, obtains concentration and is about 0.2mol/l and stable HfCl 4Colloidal sol;
(2) Si substrate processing:
After the cleaning of monocrystalline substrate usefulness standard RCA semiconductor cleaning, at room temperature soak the oxide skin(coating) (volume ratio of hydrofluoric acid and deionized water is 1: 8) of removing the surface in 3～6 minutes with diluent hydrofluoric acid solution again; Then this substrate is put into 30% (mass fraction) hydrogen peroxide sonicated 8～15 minutes of 60 ℃;
(3) thin film preparation process:
At ambient temperature, above-mentioned Si substrate is immersed the HfCl for preparing 4Kept in the colloidal sol 3～5 minutes, and made it saturated absorption; Take out the Si substrate subsequently, and clean the surface with absolute ethyl alcohol; Put into deionized water then and soaked 3～5 minutes, fully hydrolysis generates HfO 2Then dry up sample surfaces with high pure nitrogen; So the above step 50 of circulation time makes HfO 2Film, at last under 500 ℃ in nitrogen atmosphere short annealing made finished product in 5 minutes.
The composition of the above-mentioned finished product that makes and performance parameter:
1. the surface roughness of film.HfO 2The atomic force microscope of film (AFM) photo (as shown in Figure 3).The surface undulation of film is less, and the roughness RMS (root of mean square) of film is 1.100nm in 2 * 2 mu m ranges.
2. the composition of film.Fig. 4 is the x-ray photoelectron power spectrum (XPS) of hafnia film.Two typical Hf4f peak: Hf4f appear in the XPS curve of film 5/2And Hf4f 7/2Binding energy be respectively 18.55eV and 17.20eV, show HfO 2Film successfully deposits.The binding energy of the O1s of film is measured as 531.85eV, and this value is the binding energy of O1s rump electron in the hafnium silicate.It among Fig. 4 c the common information of silicon substrate Si-Si (98.75eV) and boundary layer Hf-Si-O (102.5eV).
3. the electric property of film.Fig. 5 is HfO 2The C-V of film and J-V curve, the equivalent thickness of visible film is very little, has only 0.84nm, its leakage current density J AWhen+1V is 0.21A/cm 2
Embodiment 2:
(1) HfCl 4The preparation of colloidal sol:
In the hand behaviour case of nitrogen atmosphere, get the anhydrous HfCl of 0.005mol 4Powder dissolves in the 20ml absolute ethyl alcohol, stirs it is dissolved fully; 3ml acetylacetone,2,4-pentanedione and 17ml absolute ethyl alcohol are mixed, then above two kinds of solution are mixed; Take out the solution for preparing then from hand behaviour case, at room temperature magnetic agitation is 4～7 hours, obtains concentration and is about 0.125mol/l and stable HfCl 4Colloidal sol;
(2) Si substrate processing:
After the cleaning of monocrystalline substrate usefulness standard RCA semiconductor cleaning, at room temperature soak the oxide skin(coating) (volume ratio of hydrofluoric acid and deionized water is 1: 10) of removing the surface in 3～6 minutes with diluent hydrofluoric acid solution again; Then this substrate is put into 50 ℃ 30% weight ratio hydrogen peroxide sonicated 8～15 minutes;
(3) thin film preparation process:
At ambient temperature, above-mentioned Si substrate is immersed the HfCl for preparing 4Kept in the colloidal sol 3～5 minutes, and made it saturated absorption; Take out the Si substrate subsequently, and clean the surface with absolute ethyl alcohol; Put into deionized water then and soaked 3～5 minutes, fully hydrolysis generates HfO 2Then dry up sample surfaces with high pure nitrogen; So the above step 8 of circulation time makes HfO 2Film, at last under 800 ℃ in nitrogen atmosphere short annealing made finished product in 5 minutes.
The composition of the above-mentioned finished product that makes and performance parameter:
1. the surface roughness of film.HfO 2The atomic force microscope of film (AFM) photo (as shown in Figure 6).The surface undulation of film is less, and the roughness RMS (root of mean square) of film is 1.111nm in 2 * 2 mu m ranges.
2. the composition of film.Fig. 7 is the x-ray photoelectron power spectrum (XPS) of hafnia film.Two typical Hf4f peak: Hf4f appear in the XPS curve of film 5/2And Hf4f 7/2Binding energy be respectively 18.95eV and 17.55eV, show HfO 2Film successfully deposits.The binding energy of the O1s of film is measured as 532.25eV, and this value is the binding energy of O1s rump electron in the hafnium silicate.It among Fig. 7 c the common information of silicon substrate Si-Si (98.80eV) and boundary layer Hf-Si-O (103.0eV).
3. the electric property of film.Fig. 8 is HfO 2The C-V of film and J-V curve, the equivalent thickness of film are 0.97nm, its leakage current density J AWhen-1V is 0.4A/cm 2
Embodiment 3:
(1) HfCl 4The preparation of colloidal sol:
In the hand behaviour case of nitrogen atmosphere, get the anhydrous HfCl of 0.02mol 4Powder dissolves in the 40ml absolute ethyl alcohol, stirs it is dissolved fully; 6ml acetylacetone,2,4-pentanedione and 20ml absolute ethyl alcohol are mixed, then above two kinds of solution are mixed; Take out the solution for preparing then from hand behaviour case, at room temperature magnetic agitation is 4～7 hours, obtains concentration and is about 0.3mol/l and stable HfCl 4Colloidal sol;
(2) Si substrate processing:
After the cleaning of monocrystalline substrate usefulness standard RCA semiconductor cleaning, at room temperature soak the oxide skin(coating) (volume ratio of hydrofluoric acid and deionized water is 1: 8) of removing the surface in 3～6 minutes with diluent hydrofluoric acid solution again; Then this substrate is put into 30% (mass fraction) hydrogen peroxide sonicated 8～15 minutes of 50 ℃;
(3) thin film preparation process:
At ambient temperature, above-mentioned Si substrate is immersed the HfCl for preparing 4Kept in the colloidal sol 3～5 minutes, and made it saturated absorption; Take out the Si substrate subsequently, and clean the surface with absolute ethyl alcohol; Put into deionized water then and soaked 3～5 minutes, fully hydrolysis generates HfO 2Then dry up sample surfaces with high pure nitrogen; So the above step 35 of circulation time makes HfO 2Film, at last under 800 ℃ in nitrogen atmosphere short annealing made finished product in 3 minutes.
The above-mentioned finished product that makes, the composition of its film and example 1 and 2 similar, and its electric property is as shown in Figure 9, is HfO 2The C-V of film and J-V curve, the equivalent thickness of film are 2.22nm, its leakage current density J AWhen+1V is 0.07A/cm 2
Relevant ZrO 23 examples of implementation of film are because ZrO 2The performance of film and HfO 2Film similar characterizes so just only list the composition of an embodiment here, with proof ZrO 2Film successfully deposits.Other embodiment only states preparation technology:
Embodiment 1:
(1) ZrCl 4The preparation of colloidal sol:
In the hand behaviour case of nitrogen atmosphere, get the anhydrous ZrCl of 0.01mol 4Powder dissolves in the 30ml absolute ethyl alcohol, stirs it is dissolved fully; 5ml acetylacetone,2,4-pentanedione and 15ml absolute ethyl alcohol are mixed, then above two kinds of solution are mixed; Take out the solution for preparing then from hand behaviour case, at room temperature magnetic agitation is 4～7 hours, obtains concentration and is about 0.2mol/l and stable ZrCl 4Colloidal sol;
(2) Si substrate processing:
After the cleaning of monocrystalline substrate usefulness standard RCA semiconductor cleaning, at room temperature soak the oxide skin(coating) (volume ratio of hydrofluoric acid and deionized water is 1: 8) of removing the surface in 3～6 minutes with diluent hydrofluoric acid solution again; Then this substrate is put into 30% (mass fraction) hydrogen peroxide sonicated 8～15 minutes of 60 ℃;
(3) thin film preparation process:
At ambient temperature, above-mentioned Si substrate is immersed the ZrCl for preparing 4Kept in the colloidal sol 3～5 minutes, and made it saturated absorption; Take out the Si substrate subsequently, and clean the surface with absolute ethyl alcohol; Put into deionized water then and soaked 3～5 minutes, fully hydrolysis generates ZrO 2Then dry up sample surfaces with high pure nitrogen; So the above step 30 of circulation time makes ZrO 2Film, at last under 500 ℃ in nitrogen atmosphere short annealing made finished product in 5 minutes.
The composition of the above-mentioned finished product that makes and performance parameter:
Figure 10 is the x-ray photoelectron power spectrum (XPS) of zirconia film, and binding energy is 185.25eV and the corresponding ZrO of 182.90eV difference 2Middle Zr3d 3/2And Zr3d 5/2The photoelectron characteristic peak.Figure 10 (b) is an O1s photoelectron binding energy (532.05eV), corresponding ZrO 2The middle pairing binding energy of O1s.It among Figure 10 c the common information of silicon substrate Si-Si (98.9eV) and boundary layer Zr-Si-O (102.8eV).These results show ZrO 2Film successfully deposits.
Embodiment 2:
(1) ZrCl 4The preparation of colloidal sol:
In the hand behaviour case of nitrogen atmosphere, get the anhydrous ZrCl of 0.005mol 4Powder dissolves in the 20ml absolute ethyl alcohol, stirs it is dissolved fully; 3ml acetylacetone,2,4-pentanedione and 17ml absolute ethyl alcohol are mixed, then above two kinds of solution are mixed; Take out the solution for preparing then from hand behaviour case, at room temperature magnetic agitation is 4～7 hours, obtains concentration and is about 0.125mol/l and stable ZrCl 4Colloidal sol;
(2) Si substrate processing:
After the cleaning of monocrystalline substrate usefulness standard RCA semiconductor cleaning, at room temperature soak the oxide skin(coating) (volume ratio of hydrofluoric acid and deionized water is 1: 10) of removing the surface in 3～6 minutes with diluent hydrofluoric acid solution again; Then this substrate is put into 50 ℃ 30% weight ratio hydrogen peroxide sonicated 8～15 minutes;
(3) thin film preparation process:
At ambient temperature, above-mentioned Si substrate is immersed the ZrCl for preparing 4Kept in the colloidal sol 3～5 minutes, and made it saturated absorption; Take out the Si substrate subsequently, and clean the surface with absolute ethyl alcohol; Put into deionized water then and soaked 3～5 minutes, fully hydrolysis generates ZrO 2Then dry up sample surfaces with high pure nitrogen; So the above step 8 of circulation time makes ZrO 2Film, at last under 800 ℃ in nitrogen atmosphere short annealing made finished product in 3 minutes.
Embodiment 3:
(1) ZrCl 4The preparation of colloidal sol:
In the hand behaviour case of nitrogen atmosphere, get the anhydrous ZrCl of 0.02mol 4Powder dissolves in the 40ml absolute ethyl alcohol, stirs it is dissolved fully; 6ml acetylacetone,2,4-pentanedione and 20ml absolute ethyl alcohol are mixed, then above two kinds of solution are mixed; Take out the solution for preparing then from hand behaviour case, at room temperature magnetic agitation is 4～7 hours, obtains concentration and is about 0.3mol/l and stable ZrCl 4Colloidal sol;
(2) Si substrate processing:
After the cleaning of monocrystalline substrate usefulness standard RCA semiconductor cleaning, at room temperature soak the oxide skin(coating) (volume ratio of hydrofluoric acid and deionized water is 1: 8) of removing the surface in 3～6 minutes with diluent hydrofluoric acid solution again; Then this substrate is put into 30% (mass fraction) hydrogen peroxide sonicated 8～15 minutes of 50 ℃;
(3) thin film preparation process:
At ambient temperature, above-mentioned Si substrate is immersed the ZrCl for preparing 4Kept in the colloidal sol 3～5 minutes, and made it saturated absorption; Take out the Si substrate subsequently, and clean the surface with absolute ethyl alcohol; Put into deionized water then and soaked 3～5 minutes, fully hydrolysis generates ZrO 2Then dry up sample surfaces with high pure nitrogen; So the above step 50 of circulation time makes ZrO 2Film, at last under 500 ℃ in nitrogen atmosphere short annealing made finished product in 5 minutes.

Claims (2)

1, the ultra-thin HfO of a kind of preparation 2Or ZrO 2The soft chemical method of gate dielectric membrane is characterized in that may further comprise the steps:
(1) HfCl 4Or ZrCl 4The preparation of colloidal sol:
In the hand behaviour case of nitrogen atmosphere, get the anhydrous HfCl of 0.005～0.02mol 4Or anhydrous ZrCl 4Powder dissolves in 20～40ml absolute ethyl alcohol, stirs it is dissolved fully; 3～6ml acetylacetone,2,4-pentanedione and 10～20ml absolute ethyl alcohol are mixed, then above two kinds of solution are mixed; Take out the solution for preparing then from hand behaviour case, at room temperature magnetic agitation is 4～7 hours, obtains concentration and is about 0.1～0.4mol/l and stable HfCl 4Or ZrCl 4Colloidal sol;
(2) Si substrate processing:
After the cleaning of monocrystalline substrate usefulness standard RCA semiconductor cleaning, at room temperature soak the oxide skin(coating) of removing the surface in 3～6 minutes with diluent hydrofluoric acid solution again; Then this substrate is put into 30% (mass fraction) hydrogen peroxide sonicated 8～15 minutes of 50～80 ℃;
(3) thin film preparation process:
At ambient temperature, above-mentioned Si substrate is immersed the HfCl for preparing 4Or ZrCl 4Kept in the colloidal sol 3～5 minutes, and made it saturated absorption; Take out the Si substrate subsequently, and clean the surface with absolute ethyl alcohol; Put into deionized water then and soaked 3～5 minutes, fully hydrolysis generates HfO 2Or ZrO 2Then dry up sample surfaces with high pure nitrogen; So circulation above step 8～50 time make HfO 2Or ZrO 2Film, at last under 400～800 ℃ in nitrogen atmosphere short annealing made finished product in 3～5 minutes.
2, the ultra-thin HfO of preparation according to claim 1 2Or ZrO 2The soft chemical method of gate dielectric membrane is characterized in that in the Si substrate processing process, the volume ratio of hydrofluoric acid and deionized water is 1: 8～10 in the hydrofluoric acid solution.
CNB2008101236798A 2008-05-29 2008-05-29 The ultra-thin HfO of a kind of preparation 2Or ZrO 2The soft chemical method of gate dielectric membrane Expired - Fee Related CN100543941C (en)

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CN104009093A (en) * 2014-06-13 2014-08-27 青岛大学 Method for manufacturing high-k dielectric layer water-based indium oxide thin film transistors
CN104009093B (en) * 2014-06-13 2016-08-31 青岛大学 A kind of preparation method of high k dielectric layer aqueous indium oxide film transistor
CN113539812A (en) * 2021-07-14 2021-10-22 湘潭大学 Method for regulating and controlling electrical properties of hafnium oxide based ferroelectric film by homogeneous seed layer
CN113539812B (en) * 2021-07-14 2024-04-26 湘潭大学 Method for regulating and controlling electrical properties of hafnium oxide-based ferroelectric film by homogenous seed layer

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