CN109273556B - Substrate for terahertz wave detection device and preparation method thereof - Google Patents
Substrate for terahertz wave detection device and preparation method thereof Download PDFInfo
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- CN109273556B CN109273556B CN201810835958.0A CN201810835958A CN109273556B CN 109273556 B CN109273556 B CN 109273556B CN 201810835958 A CN201810835958 A CN 201810835958A CN 109273556 B CN109273556 B CN 109273556B
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- 238000003756 stirring Methods 0.000 claims description 80
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 47
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- 238000002955 isolation Methods 0.000 claims description 28
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 24
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000012141 concentrate Substances 0.000 claims description 24
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims description 24
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- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 claims description 24
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- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 claims description 12
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- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 claims description 12
- 229910001981 cobalt nitrate Inorganic materials 0.000 claims description 12
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 claims description 12
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- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 12
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- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 12
- SAXCKUIOAKKRAS-UHFFFAOYSA-N cobalt;hydrate Chemical compound O.[Co] SAXCKUIOAKKRAS-UHFFFAOYSA-N 0.000 claims description 10
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- ODVRHJKVXOGKEJ-UHFFFAOYSA-N iron 5,10,15,20-tetraphenyl-21,23-dihydroporphyrin Chemical compound [Fe].c1cc2nc1c(-c1ccccc1)c1ccc([nH]1)c(-c1ccccc1)c1ccc(n1)c(-c1ccccc1)c1ccc([nH]1)c2-c1ccccc1 ODVRHJKVXOGKEJ-UHFFFAOYSA-N 0.000 claims description 8
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- ZWYCMWUUWAFXIA-UHFFFAOYSA-N iron(2+);5,10,15,20-tetraphenylporphyrin-22,23-diide Chemical compound [Fe+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C2=CC=C([N-]2)C(C=2C=CC=CC=2)=C2C=CC3=N2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 ZWYCMWUUWAFXIA-UHFFFAOYSA-N 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 2
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- 229910002601 GaN Inorganic materials 0.000 abstract description 25
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 abstract description 12
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 230000002123 temporal effect Effects 0.000 description 1
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention belongs to the technical field of detectors, and particularly relates to a substrate for a device for terahertz wave detection and a preparation method thereof. An aluminum gallium nitride/gallium nitride high electron mobility field effect transistor (HEMT) is used as a basic structure, and an aluminum gallium nitride/gallium nitride layer is prepared by a substrate design and an epitaxial method; and then preparing an active region table board, a gate medium, an ohmic contact window and an electrode, wherein the obtained two-dimensional electron gas in the field effect transistor has higher electron concentration and mobility, the spectrum detection device for realizing high-speed, high-sensitivity and high-signal-to-noise ratio detection on THz waves under the room temperature condition is obtained, and the detection on the terahertz waves is finally realized.
Description
The invention belongs to a device for terahertz wave detection and a preparation method thereof, and relates to divisional application of invention application with application date of 2017, 6 and 26 months and application number of 201710495199.3, which belongs to the field of product preparation and technology.
Technical Field
The invention belongs to the technical field of detectors, and particularly relates to a substrate for a device for terahertz wave detection and a preparation method thereof.
Background
The terahertz wave has high spatial resolution due to high frequency; and has a high temporal resolution due to its short pulses (on the order of picoseconds). Terahertz imaging technology and terahertz spectroscopy technology thus constitute two major key technologies for terahertz applications. Meanwhile, the terahertz energy is very small, and the material cannot be damaged, so that the terahertz wave detector has more advantages compared with the X-ray. In addition, the resonance frequency of the vibration and rotation frequency of the biomacromolecule is in the terahertz waveband, so the terahertz has good application prospects in the agriculture and food processing industries such as grain seed selection, excellent strain selection and the like. The vibration and the rotation energy level of many biomacromolecules are just positioned in the THz wave band, so that the research on the THz absorption spectrum of the biochemical reaction can be utilized to obtain the motion information of the biomolecular in the reaction. Most polar molecules such as water molecules, ammonia gas and the like have strong absorption to terahertz radiation, and substance components can be researched or product quality control can be carried out by analyzing the characteristic spectrums of the polar molecules, so that the terahertz spectrum technology has wide application prospects in the aspects of analyzing and researching macromolecules. Since most of the electromagnetic energy in the universe is composed of microwave background, the measurement of the electromagnetic energy can help to investigate the transient image 30 ten thousand years after a large explosion, obtain accurate values of a plurality of important universe parameters and powerfully prove that the universe expansion motion model is dominated by dark energy. The formation of stars is caused by the gravitational collapse of deep cold molecular gas clouds, which also contain large amounts of interstellar dust. The reason why the visible light and the near infrared light are opaque in the gas cloud is that the interstellar dust is. Most gases have very low temperatures in the molecular cloud, approximately between 10K and 20K, and their radiation is mainly in the millimeter wave band. Therefore, terahertz spectroscopy is a powerful tool to study star and planet formation.
In 2004, the THz technology was evaluated as one of ten major technologies that will change the world in the future by the U.S. government, and in japan, 1, 8 th of 2005, the THz technology was the first of ten major strategic targets of the national pillars, and research and development were performed with national force. The government of China specially holds the 'Xiangshan science and technology conference' in 2005 in 11 months, invites a plurality of academists who have an influence on the THz research field in China to specially discuss the development direction of the THz industry of China, and makes a development plan of the THz technology of China. In addition, governments, institutions, enterprises, universities and research institutions in many countries and regions such as the united states, europe, asia, australia and the like are invested in the development heat tide of THz. One of the pioneers in the THz research field, zhan xicheng doctor, american college: "Next Ray, T-Ray". At present, a plurality of research institutions develop relevant research in the terahertz field at home, wherein the university of capital is an early start and is invested into a large family, in the aspects of terahertz spectrum, imaging and identification of drugs and explosives, a lot of pioneering work is made on the aspect of carrying out nondestructive detection on internal defects of nonpolar aerospace materials by utilizing terahertz, and meanwhile, due to the unique advantage of terahertz rays in the aspect of safety inspection, the terahertz laboratory of university of capital is positively concentrated in strength to research and develop security inspection prototype equipment capable of being used for live-action testing. In addition, the THz project research work was earlier performed by units such as the shanghai microsystem and information technology institute of the chinese academy of sciences, the physical institute of the chinese academy of sciences, the applied physical institute of the chinese academy of sciences, the zijin shan astronomical desk of the chinese academy of sciences, the west ann optical institute, the shanghai transportation university, the west ann reason university, and the like.
At present, the terahertz signal detection technology can be divided into a coherent pulse time domain continuous wave detection technology and an incoherent direct energy detection technology in principle. The terahertz pulse time-domain continuous wave detection technology based on the coherent technology adopts a mode similar to terahertz pulse generation to carry out coherent detection, and one detection method is called as a terahertz time-domain spectroscopy technology; the other type adopts a superheterodyne detector at the low-frequency end of the terahertz wave. The main detection methods include thermal radiation detection, Fourier transform spectroscopy, time domain spectroscopy, heterodyne detection and terahertz quantum well infrared photon detection. In the development and utilization of terahertz wave bands, the detection of terahertz signals has great significance. On one hand, due to the fact that the output power of the terahertz radiation source is low, the background noise of the terahertz radiation in a frequency range is large, water vapor attenuation is serious and the like, terahertz radiation signals reflected from a target are lower, and compared with optical waveband electromagnetic waves with shorter wavelengths, the energy of terahertz wave photons is low, and the background noise generally occupies a significant position. On the other hand, with the deep development of the terahertz technology in various fields, particularly in the military field, the continuous improvement of the detection sensitivity becomes a necessary requirement.
Because the radiation power of the terahertz light source is generally low at present, and the existing device for detecting terahertz waves generally has the defects of low response speed (pyroelectric detector), narrow detection frequency (schottky diode), poor sensitivity (Golay cell detector) and low-temperature operation (bolometer), the development of a device for detecting terahertz waves, which has high speed, high sensitivity and high signal-to-noise ratio and can operate at room temperature, is particularly important.
Disclosure of Invention
The invention discloses a device for detecting terahertz waves and a preparation method thereof, wherein an aluminum gallium nitrogen/gallium nitrogen high electron mobility field effect transistor (HEMT) is used as a basic structure, two-dimensional electron gas in the field effect transistor has higher electron concentration and mobility, a spectrum detection device for detecting THz waves at high speed, high sensitivity and high signal to noise ratio under the condition of exceeding room temperature is obtained, the detection of terahertz waves is finally realized, and the defect that the prior art can obtain good performance only by low-temperature (liquid nitrogen) environment test is particularly overcome.
The invention adopts the following technical scheme:
a method for manufacturing a device for terahertz wave detection comprises the following steps:
(1) under the protection of nitrogen, mixing ammonium hexachloroiridate, hydrated nickel nitrate, ammonium molybdate, ethanol and propionic acid; then refluxing and stirring for 5 minutes, and then adding ammonia water; after reacting for 10 minutes, naturally cooling to room temperature, adding ethyl acetate for coagulation and centrifugation; washing the centrifugal precipitate with water, and dispersing in ethanol to obtain a dispersion system; then adding strontium nitrate, cobalt nitrate and water, stirring for 10 minutes, adding samarium sesquichloride, and stirring for 1 hour to obtain a precursor of the supporting layer;
(2) adding polyvinyl alcohol, hydrogen peroxide and tetraphenylporphyrin iron into the dispersion system, stirring for 1 hour at 50 ℃, then adding ethyl naphthoyl acetate and dibutyl phthalate, refluxing and stirring for 10 minutes, and then concentrating to obtain a concentrate with the solid content of 80%; carrying out hypergravity treatment on the concentrate; then freeze-drying to obtain nanometer powder; the rotating speed of the supergravity treatment is 35000-40000 rpm; the flow rate of the concentrate is 80-90 mL/min;
(3) adding acetone into graphene oxide and epoxy resin, refluxing and stirring for 20 minutes, adding N-vinylcarbazole and diphenylsilanediol, continuously stirring for 10 minutes, adding azobisisobutyronitrile, and stirring for 30 minutes to obtain an isolation layer precursor;
(4) adding the nano powder into the precursor of the isolation layer, stirring for 5 minutes, adding the carbon nano tube, and stirring for 10 minutes to obtain a precursor of the reinforcing layer;
(5) sequentially coating an isolation layer precursor, a reinforcing layer precursor and a supporting layer precursor on a heat-resistant substrate to obtain a substrate; drying at room temperature after each coating;
(6) preparing an aluminum gallium nitride/gallium nitride layer on a substrate by an epitaxial method; and then preparing an active region table top, a gate medium, an ohmic contact window and an electrode so as to obtain the device for detecting the terahertz waves.
The invention also discloses a preparation method of the device for detecting the terahertz waves, which comprises the following steps:
(1) under the protection of nitrogen, mixing ammonium hexachloroiridate, hydrated nickel nitrate, ammonium molybdate, ethanol and propionic acid; then refluxing and stirring for 5 minutes, and then adding ammonia water; after reacting for 10 minutes, naturally cooling to room temperature, adding ethyl acetate for coagulation and centrifugation; washing the centrifugal precipitate with water, and dispersing in ethanol to obtain a dispersion system; then adding strontium nitrate, cobalt nitrate and water, stirring for 10 minutes, adding samarium sesquichloride, and stirring for 1 hour to obtain a precursor of the supporting layer;
(2) adding polyvinyl alcohol, hydrogen peroxide and tetraphenylporphyrin iron into the dispersion system, stirring for 1 hour at 50 ℃, then adding ethyl naphthoyl acetate and dibutyl phthalate, refluxing and stirring for 10 minutes, and then concentrating to obtain a concentrate with the solid content of 80%; carrying out hypergravity treatment on the concentrate; then freeze-drying to obtain nanometer powder; the rotating speed of the supergravity treatment is 35000-40000 rpm; the flow rate of the concentrate is 80-90 mL/min;
(3) adding acetone into graphene oxide and epoxy resin, refluxing and stirring for 20 minutes, adding N-vinylcarbazole and diphenylsilanediol, continuously stirring for 10 minutes, adding azobisisobutyronitrile, and stirring for 30 minutes to obtain an isolation layer precursor;
(4) adding the nano powder into the precursor of the isolation layer, stirring for 5 minutes, adding the carbon nano tube, and stirring for 10 minutes to obtain a precursor of the reinforcing layer;
(5) sequentially coating an isolation layer precursor, a reinforcing layer precursor and a supporting layer precursor on a heat-resistant substrate to obtain a substrate; drying at room temperature after each coating;
(6) preparing an aluminum gallium nitride/gallium nitride layer on a substrate by an epitaxial method; then preparing an active region table board, a gate medium, an ohmic contact window and an electrode so as to obtain a device for detecting terahertz waves; and packaging the device for detecting the terahertz waves to obtain the device for detecting the terahertz waves.
The invention also discloses a preparation method of the system for detecting the terahertz waves, which comprises the following steps:
(1) under the protection of nitrogen, mixing ammonium hexachloroiridate, hydrated nickel nitrate, ammonium molybdate, ethanol and propionic acid; then refluxing and stirring for 5 minutes, and then adding ammonia water; after reacting for 10 minutes, naturally cooling to room temperature, adding ethyl acetate for coagulation and centrifugation; washing the centrifugal precipitate with water, and dispersing in ethanol to obtain a dispersion system; then adding strontium nitrate, cobalt nitrate and water, stirring for 10 minutes, adding samarium sesquichloride, and stirring for 1 hour to obtain a precursor of the supporting layer;
(2) adding polyvinyl alcohol, hydrogen peroxide and tetraphenylporphyrin iron into the dispersion system, stirring for 1 hour at 50 ℃, then adding ethyl naphthoyl acetate and dibutyl phthalate, refluxing and stirring for 10 minutes, and then concentrating to obtain a concentrate with the solid content of 80%; carrying out hypergravity treatment on the concentrate; then freeze-drying to obtain nanometer powder; the rotating speed of the supergravity treatment is 35000-40000 rpm; the flow rate of the concentrate is 80-90 mL/min;
(3) adding acetone into graphene oxide and epoxy resin, refluxing and stirring for 20 minutes, adding N-vinylcarbazole and diphenylsilanediol, continuously stirring for 10 minutes, adding azobisisobutyronitrile, and stirring for 30 minutes to obtain an isolation layer precursor;
(4) adding the nano powder into the precursor of the isolation layer, stirring for 5 minutes, adding the carbon nano tube, and stirring for 10 minutes to obtain a precursor of the reinforcing layer;
(5) sequentially coating an isolation layer precursor, a reinforcing layer precursor and a supporting layer precursor on a heat-resistant substrate to obtain a substrate; drying at room temperature after each coating;
(6) preparing an aluminum gallium nitride/gallium nitride layer on a substrate by an epitaxial method; then preparing an active region table board, a gate medium, an ohmic contact window and an electrode so as to obtain a device for detecting terahertz waves; packaging the device for detecting the terahertz waves to obtain a device for detecting the terahertz waves; the device for detecting the terahertz waves is combined with a support, a computer and an indicator lamp to obtain the system for detecting the terahertz waves.
In the invention, creativity lies in the preparation of the substrate, the substrate in the prior art is completely overturned, and the subsequent further operation is carried out on the substrate, for example, an aluminum gallium nitride/gallium nitride layer is prepared on the substrate by an epitaxial method; then, preparing an active region table top, a gate medium, an ohmic contact window and an electrode, which belong to the prior art, and designing according to required parameters can not influence the technical effect of the invention; packaging the device for detecting the terahertz waves, wherein the operation of obtaining the device for detecting the terahertz waves can be performed according to chip epoxy packaging; the device for detecting the terahertz waves is combined with the support, the computer and the indicator lamp, so that the system for detecting the terahertz waves can be operated according to mechanical design and computer connection. The system for detecting the terahertz waves can accurately and stably detect the terahertz waves in the environment.
In the invention, the mass ratio of ammonium hexachloroiridate, hydrated nickel nitrate, ammonium molybdate, ethanol, propionic acid, ammonia water, strontium nitrate, cobalt nitrate, water and samarium trimaran is 15: 45: 30: 150: 80: 50: 5: 10: 100: 5; the mass ratio of the centrifugal precipitate, the polyvinyl alcohol, the hydrogen peroxide, the iron tetraphenylporphyrin, the ethyl naphthoyl acetate and the dibutyl phthalate is 15: 55: 5: 0.1: 40: 50; the mass ratio of the graphene oxide to the epoxy resin to the acetone to the N-vinyl carbazole to the diphenyl silanediol to the azodiisobutyronitrile is 3: 100: 150: 15: 30: 3; the mass ratio of the nano powder to the isolating layer precursor is 78: 100.
The invention also discloses a preparation method of the substrate for the terahertz wave detection device, which comprises the following steps:
(1) under the protection of nitrogen, mixing ammonium hexachloroiridate, hydrated nickel nitrate, ammonium molybdate, ethanol and propionic acid; then refluxing and stirring for 5 minutes, and then adding ammonia water; after reacting for 10 minutes, naturally cooling to room temperature, adding ethyl acetate for coagulation and centrifugation; washing the centrifugal precipitate with water, and dispersing in ethanol to obtain a dispersion system; then adding strontium nitrate, cobalt nitrate and water, stirring for 10 minutes, adding samarium sesquichloride, and stirring for 1 hour to obtain a precursor of the supporting layer;
(2) adding polyvinyl alcohol, hydrogen peroxide and tetraphenylporphyrin iron into the dispersion system, stirring for 1 hour at 50 ℃, then adding ethyl naphthoyl acetate and dibutyl phthalate, refluxing and stirring for 10 minutes, and then concentrating to obtain a concentrate with the solid content of 80%; carrying out hypergravity treatment on the concentrate; then freeze-drying to obtain nanometer powder; the rotating speed of the supergravity treatment is 35000-40000 rpm; the flow rate of the concentrate is 80-90 mL/min;
(3) adding acetone into graphene oxide and epoxy resin, refluxing and stirring for 20 minutes, adding N-vinylcarbazole and diphenylsilanediol, continuously stirring for 10 minutes, adding azobisisobutyronitrile, and stirring for 30 minutes to obtain an isolation layer precursor;
(4) adding the nano powder into the precursor of the isolation layer, stirring for 5 minutes, adding the carbon nano tube, and stirring for 10 minutes to obtain a precursor of the reinforcing layer;
(5) sequentially coating an isolation layer precursor, a reinforcing layer precursor and a supporting layer precursor on a heat-resistant substrate to obtain a substrate; after each application, it was dried at room temperature.
The invention also discloses a preparation method of the substrate precursor for the terahertz wave detection device, which comprises the following steps:
(1) under the protection of nitrogen, mixing ammonium hexachloroiridate, hydrated nickel nitrate, ammonium molybdate, ethanol and propionic acid; then refluxing and stirring for 5 minutes, and then adding ammonia water; after reacting for 10 minutes, naturally cooling to room temperature, adding ethyl acetate for coagulation and centrifugation; washing the centrifugal precipitate with water, and dispersing in ethanol to obtain a dispersion system; then adding strontium nitrate, cobalt nitrate and water, stirring for 10 minutes, adding samarium sesquichloride, and stirring for 1 hour to obtain a precursor of the supporting layer;
(2) adding polyvinyl alcohol, hydrogen peroxide and tetraphenylporphyrin iron into the dispersion system, stirring for 1 hour at 50 ℃, then adding ethyl naphthoyl acetate and dibutyl phthalate, refluxing and stirring for 10 minutes, and then concentrating to obtain a concentrate with the solid content of 80%; carrying out hypergravity treatment on the concentrate; then freeze-drying to obtain nanometer powder; the rotating speed of the supergravity treatment is 35000-40000 rpm; the flow rate of the concentrate is 80-90 mL/min;
(3) adding acetone into graphene oxide and epoxy resin, refluxing and stirring for 20 minutes, adding N-vinylcarbazole and diphenylsilanediol, continuously stirring for 10 minutes, adding azobisisobutyronitrile, and stirring for 30 minutes to obtain an isolation layer precursor;
(4) adding the nano powder into the precursor of the isolation layer, stirring for 5 minutes, adding the carbon nano tube, and stirring for 10 minutes to obtain a precursor of the reinforcing layer;
(5) the substrate precursor for the terahertz wave detection device comprises an isolation layer precursor, a reinforcing layer precursor and a supporting layer precursor.
The invention also discloses a product obtained by the preparation method.
The mass concentration of the ammonia water is 8.5%; the molecular weight of the polyvinyl alcohol is 1500-2000. According to the invention, the hydrogen peroxide and the iron tetraphenylporphyrin are added while the polyvinyl alcohol is added, so that the surface activity of the nano powder is increased, more importantly, the molecular weight of the polyvinyl alcohol is reduced, namely, a certain degradation effect is provided for a molecular chain of the polyvinyl alcohol, so that the key help is provided for improving the dispersion performance and the continuity performance of metal oxides after the subsequent conductive nano powder is mixed with resin, especially the influence of the polyvinyl alcohol on the overall performance is avoided, the advantages that the activity of the polyvinyl alcohol is improved by combining other compounds on the surface of the conductive powder and the compatibility is increased are fully exerted, the good electrical performance is reflected, and the sintering effect in the epitaxial preparation process is increased.
In the invention, the thicknesses of the isolating layer precursor, the reinforcing layer precursor and the supporting layer precursor on the heat-resistant substrate are respectively 50 micrometers, 500 micrometers and 260 micrometers; in the process of epitaxial preparation of gallium and nitrogen, each layer is obviously changed to generate chemical reaction, a precursor of the isolation layer is firstly cured to form a cross-linked structure to embody certain mechanical strength, then carbonization is carried out, nano powder of a precursor of the reinforcing layer and an organic system are interacted to form a network structure, and chemical bond acting force is generated between the nano powder and the upper layer and the lower layer to enable the three layers to be fused into a whole, the subsequent carbonization of the organic layer and the formation of a compact structure of the nano powder are carried out, precursors of the supporting layer are mutually dissolved by oxides to finally form a compact structure, particularly, the compact material is mainly a conductive oxidation compound, and meanwhile, the mechanical strength of the material is improved by graphene, the carbon nano tube and silicon elements contained, so that the material above the material can be supported; the optimal thickness ensures that the obtained substrate has excellent mechanical property and electrical property after being stripped from the heat-resistant substrate and also ensures that the problems of pollution, displacement and the like caused by organic matter flow can not occur in the epitaxial preparation process, so that the prepared device has good surface appearance of a sample, an epitaxial film does not have cracks, and the concentration of the n-type back substrate is lower than 102cm-3。
The invention limits the use amount of each component and process parameters, on one hand, no reference exists before the invention, and no theoretical guidance exists, on the other hand, the preparation process of the heteroplasmon is very critical because the heteroplasmon is especially used for detecting the device, and is the basis of the device performance, and the application value of the device is directly influenced, on the other hand, the substrate prepared under the conditions limited by the invention is used for preparing the device, the obtained technical effect is very good, and particularly, the matching of three layers of materials, namely an isolation layer precursor, a reinforcing layer precursor and a supporting layer precursor, not only solves the problem of heterojunction support, but also avoids the defects of the existing substrate such as sapphire, and the substrate has strong mechanical property and good electrical property because of the use of nano powder.
The prior art focuses on structural design and there is little research on basic preparation, with a small percentage of research being only in terms of heteroplasmon growth. The melting point and saturated vapor pressure of gallium and nitrogen are high, and the gallium and nitrogen are difficult to prepare by adopting the conventional methodAnd (4) discharging the bulk single crystal. At present, the gallium-nitrogen growth internationally basically adopts heteroepitaxy preparation, and the gallium-nitrogen material is epitaxially grown on a sapphire substrate, which is a universal method for manufacturing optoelectronic devices; in the process of preparing gallium and nitrogen by MOCVD technology, trimethyl gallium is used as MO source, NH3As N source and with H2And N2Or the mixed gas of the two gases is used as carrier gas, reactants are loaded into the reaction cavity and react at a certain temperature to generate molecular groups of corresponding film materials, and the molecular groups are adsorbed, nucleated and grown on the surface of the substrate to finally form the required epitaxial layer. Because the lattice mismatch and the thermal mismatch of gallium-nitrogen and a sapphire substrate are large, the surface appearance of a grown sample is poor, an epitaxial film has cracks, and the concentration of an n-type background is usually 1018cm-3The above. The selection of the material substrate has great influence on the quality of the epitaxial AlGaN/GaN crystal, and has important influence on the performance and reliability of the device, which is also the main reason that the device for terahertz wave detection in the prior art is mature slowly.
The existing method for growing AlGaN/GaN on sapphire by adopting a two-step method, namely preparing a buffer layer at a low temperature and then growing the AlGaN/GaN at a high temperature, can slightly improve the growth effect; but the improvement is limited, and causes cost rise, complicated steps and resource consumption, because the first step also needs to be carried out at a high temperature of over 500 ℃, and the key is that if the defects exist in the first step, the second step is seriously influenced, and the effect is not as good as that of the preparation directly on the sapphire. The invention designs an isolation layer on a heat-resistant substrate at normal temperature, coats a reinforcing layer and a supporting layer, and then epitaxially grows AlGaN/GaN at high temperature on the supporting layer in one step, in the growth process, the reinforcing layer and the supporting layer are simultaneously sintered to form a compact structure, so that the AlGaN/GaN can be supported, the problem that the existing substrate is not matched with the GaN can be solved, the isolation layer is a polymer layer, the epitaxial preparation process is decomposed into carbon materials, the carbon materials are integrated with the compact structure under the condition of limited thickness, no action force is exerted on the heat-resistant substrate, the heat-resistant substrate can be peeled off from the heat-resistant substrate, the resistance is low, the heat-resistant substrate has simple effect, only plays a role of early support, can be removed after the growth is finished, and any material with a smooth surface and can bear the epitaxial temperature can be selected.
The material of the invention has the characteristics of wide forbidden band, strong bond forming ionicity, strong spontaneous polarization effect in crystals and the like. Compared with the traditional MESFET device, the HEMTs have higher two-dimensional electron gas concentration which is as high as 1014cm2Also, since electrons in the potential well are spatially separated from the donor impurity, electron mobility is greatly improved, which is manifested as excellent characteristics of a HEMT device having high transconductance, high saturation current, and high cutoff frequency.
The heterojunction manufactured based on the invention can have 5000 cm at normal temperature2High electron mobility of/Vs, which makes it more advantageous in high frequency microwave device fabrication than existing devices; the two-dimensional electron gas has a very high density, typically up to 1014cm2The material is 10 times of that of the existing HEMT, which is mainly because the base material of the invention is a strong polarization material, and a large amount of fixed positive charges are generated on the interface by the spontaneous polarization effect and the piezoelectric polarization effect caused by lattice mismatch, which directly results in the formation of high-surface-density two-dimensional electron gas.
High speed is still a goal of microelectronics; high temperature, high power, radiation resistance and the like are still not well solved. The device has the characteristics of wider energy gap, higher saturated electron rate, larger breakdown voltage, smaller dielectric constant, better heat-conducting property and the like, has more stable chemical property, high temperature resistance and corrosion resistance, and is very suitable for manufacturing anti-radiation, high-frequency, high-power and high-density integrated electronic devices and blue, green and ultraviolet optoelectronic devices; the high-power LED lamp has the advantages of high output power and high cut-off frequency, has bearing capacity to severe working conditions, and is expected to be applied to high-temperature and strong-radiation environments which cannot be met by traditional devices. All of these excellent properties well compensate for the problems of the conventional semiconductor devices due to their inherent disadvantages.
The prior art mainly studies the influence of a heterojunction and an antenna on a device, and the mechanism of the influence on a substrate is not clear, but a person skilled in the art knows that the substrate has a great influence on the device as an important component of the device preparation and structure. Unfortunately, due to too large discipline intersection and electrochemical complexity, the research of basic sapphire and silicon carbide substrates is not separated in the field of detection devices at present, the novel substrate is creatively designed for the preparation of heterojunction, the existing device preparation process is not required to be changed, the obtained product has excellent performance and strong application potential, and the brick is thrown away to lead jade, so that researchers in China are expected to perform multidiscipline intersection, the performance of all aspects of the detection device is improved, the wooden barrel effect is avoided, and the effort is made for the development of the detection device in China.
Detailed Description
In the invention, creativity lies in the preparation of the substrate, the substrate in the prior art is completely overturned, and then further operation is carried out on the substrate, such as preparing an AlGaN/GaN layer on the substrate by an epitaxial method 1100 ℃ (optional metal organic chemical vapor phase epitaxy method, molecular beam epitaxy method or hydride vapor phase epitaxy method); then preparing an active region table top, a gate medium, an ohmic contact window and an electrode, wherein the parameters are designed into the conventional general design; after the heat-resistant substrate is removed, packaging the device for terahertz wave detection, wherein the operation of obtaining the device for terahertz wave detection can also be carried out according to chip epoxy packaging; the device for detecting the terahertz waves is combined with the support, the computer and the indicator lamp, so that the system for detecting the terahertz waves can be operated according to mechanical design and computer connection. The system for detecting the terahertz waves can accurately and stably detect the terahertz waves in the environment.
Example one
A method for manufacturing a device for terahertz wave detection comprises the following steps:
(1) under the protection of nitrogen, mixing ammonium hexachloroiridate, hydrated nickel nitrate, ammonium molybdate, ethanol and propionic acid; then refluxing and stirring for 5 minutes, and then adding ammonia water; after reacting for 10 minutes, naturally cooling to room temperature, adding ethyl acetate for coagulation and centrifugation; washing the centrifugal precipitate with water, and dispersing in ethanol to obtain a dispersion system; then adding strontium nitrate, cobalt nitrate and water, stirring for 10 minutes, adding samarium sesquichloride, and stirring for 1 hour to obtain a precursor of the supporting layer;
(2) adding polyvinyl alcohol, hydrogen peroxide and tetraphenylporphyrin iron into the dispersion system, stirring for 1 hour at 50 ℃, then adding ethyl naphthoyl acetate and dibutyl phthalate, refluxing and stirring for 10 minutes, and then concentrating to obtain a concentrate with the solid content of 80%; carrying out hypergravity treatment on the concentrate; then freeze-drying to obtain nanometer powder; the rotating speed of the supergravity treatment is 40000 rpm; the flow rate of the concentrate is 90 mL/min;
(3) adding acetone into graphene oxide and epoxy resin, refluxing and stirring for 20 minutes, adding N-vinylcarbazole and diphenylsilanediol, continuously stirring for 10 minutes, adding azobisisobutyronitrile, and stirring for 30 minutes to obtain an isolation layer precursor;
(4) adding the nano powder into the precursor of the isolation layer, stirring for 5 minutes, adding the carbon nano tube, and stirring for 10 minutes to obtain a precursor of the reinforcing layer;
(5) sequentially coating an isolation layer precursor, a reinforcing layer precursor and a supporting layer precursor on the cleaned sapphire substrate to obtain a substrate; drying at room temperature after each coating;
(6) preparing an aluminum gallium nitride/gallium nitride layer on a substrate by an epitaxial method; and removing the sapphire, and then preparing an active region table board, a gate dielectric, an ohmic contact window and an electrode, thereby obtaining the device for detecting the terahertz waves.
Meanwhile, the substrate obtained in the step (5) is cured at 180 ℃/1 hour, and the Td reaches 478 ℃ in a test; sintering the substrate obtained in the step (5) by utilizing an epitaxial method for empty space running to obtain a compact conductive material, wherein the compression strength reaches 142MPa, the bending modulus reaches 6.26Gpa, and the impact strength reaches 28.8KJ/m2Can be completely used as a heterojunction supporting material, and has the volume resistivity of 2.5 omega cm; after an aluminum gallium nitrogen/gallium nitrogen layer is prepared on a substrate by an epitaxial method, an expansion coefficient test is carried out, and the error between a heterojunction layer and the substrate layer is less than 0.2%; may have a width of 5000 cm2High electron mobility of/Vs, high two-dimensional electron gas density, typically up to 1014cm2。
The prepared device is subjected to 1.0 THz application test, and the photocurrent is 3.2nA and the noise isopower is 190pW/Hz at normal temperature0.5Sound boxThe response degree is 179mA/W, and the response time is 6 ps; under liquid nitrogen, the photocurrent was 3.9nA, and the noise equipower was 25pW/Hz0.5The responsivity is 362mA/W, and the response time is 2 ps; at 80 ℃, the photocurrent is 2.2nA, and the noise equipower is 272pW/Hz0.5The responsivity was 129mA/W and the response time was 9 ps.
The mass ratio of the ammonium hexachloroiridate to the hydrated nickel nitrate to the ammonium molybdate to the ethanol to the propionic acid to the ammonia water to the strontium nitrate to the cobalt nitrate to the water to the samarium trimaran is 15: 45: 30: 150: 80: 50: 5: 10: 100: 5; the mass ratio of the centrifugal precipitate, the polyvinyl alcohol, the hydrogen peroxide, the iron tetraphenylporphyrin, the ethyl naphthoyl acetate and the dibutyl phthalate is 15: 55: 5: 0.1: 40: 50; the mass ratio of the graphene oxide to the epoxy resin to the acetone to the N-vinyl carbazole to the diphenyl silanediol to the azodiisobutyronitrile is 3: 100: 150: 15: 30: 3; the mass ratio of the nano powder to the isolating layer precursor is 78: 100; the mass concentration of the ammonia water is 8.5 percent; the molecular weight of the polyvinyl alcohol is 1500-2000; the thicknesses of the separation layer precursor, the reinforcing layer precursor and the support layer precursor on the heat-resistant substrate are respectively 50 micrometers, 500 micrometers and 260 micrometers.
Example two
A method for manufacturing a device for terahertz wave detection comprises the following steps:
(1) under the protection of nitrogen, mixing ammonium hexachloroiridate, hydrated nickel nitrate, ammonium molybdate, ethanol and propionic acid; then refluxing and stirring for 5 minutes, and then adding ammonia water; after reacting for 10 minutes, naturally cooling to room temperature, adding ethyl acetate for coagulation and centrifugation; washing the centrifugal precipitate with water, and dispersing in ethanol to obtain a dispersion system; then adding strontium nitrate, cobalt nitrate and water, stirring for 10 minutes, adding samarium sesquichloride, and stirring for 1 hour to obtain a precursor of the supporting layer;
(2) adding polyvinyl alcohol, hydrogen peroxide and tetraphenylporphyrin iron into the dispersion system, stirring for 1 hour at 50 ℃, then adding ethyl naphthoyl acetate and dibutyl phthalate, refluxing and stirring for 10 minutes, and then concentrating to obtain a concentrate with the solid content of 80%; carrying out hypergravity treatment on the concentrate; then freeze-drying to obtain nanometer powder; the rotating speed of the hypergravity treatment is 35000 rpm; the flow rate of the concentrate is 80 mL/min;
(3) adding acetone into graphene oxide and epoxy resin, refluxing and stirring for 20 minutes, adding N-vinylcarbazole and diphenylsilanediol, continuously stirring for 10 minutes, adding azobisisobutyronitrile, and stirring for 30 minutes to obtain an isolation layer precursor;
(4) adding the nano powder into the precursor of the isolation layer, stirring for 5 minutes, adding the carbon nano tube, and stirring for 10 minutes to obtain a precursor of the reinforcing layer;
(5) coating an isolation layer precursor, a reinforcing layer precursor and a supporting layer precursor on the cleaned sapphire in sequence to obtain a substrate; drying at room temperature after each coating;
(6) preparing an aluminum gallium nitride/gallium nitride layer on a substrate by an epitaxial method; and removing the sapphire, and then preparing an active region table board, a gate dielectric, an ohmic contact window and an electrode, thereby obtaining the device for detecting the terahertz waves.
Meanwhile, curing the substrate obtained in the step (5) at 180 ℃/1 hour, and testing shows that the Td reaches 477 ℃; sintering the substrate obtained in the step (5) by utilizing an epitaxial method for empty space to obtain the compact conductive material, wherein the compression strength reaches 143MPa, the bending modulus reaches 6.25Gpa, and the impact strength reaches 28.9KJ/m2Can be completely used as a heterojunction supporting material, and has the volume resistivity of 2.5 omega cm; after an aluminum gallium nitrogen/gallium nitrogen layer is prepared on a substrate by an epitaxial method, an expansion coefficient test is carried out, and the error between a heterojunction layer and the substrate layer is less than 0.2%; may have a width of 5000 cm2High electron mobility of/Vs, high two-dimensional electron gas density, typically up to 1014cm2。
The prepared device is subjected to 1.0 THz application test, and the photocurrent is 3.2nA and the noise isopower is 191pW/Hz at normal temperature0.5The responsivity is 178mA/W, and the response time is 6 ps; under liquid nitrogen, the photocurrent was 3.9nA, and the noise equipower was 25pW/Hz0.5The responsivity is 364mA/W, and the response time is 2 ps; at 80 ℃, the photocurrent is 2.2nA, and the noise equipower is 273pW/Hz0.5The responsivity was 128mA/W and the response time was 9 ps.
The mass ratio of the ammonium hexachloroiridate to the hydrated nickel nitrate to the ammonium molybdate to the ethanol to the propionic acid to the ammonia water to the strontium nitrate to the cobalt nitrate to the water to the samarium trimaran is 15: 45: 30: 150: 80: 50: 5: 10: 100: 5; the mass ratio of the centrifugal precipitate, the polyvinyl alcohol, the hydrogen peroxide, the iron tetraphenylporphyrin, the ethyl naphthoyl acetate and the dibutyl phthalate is 15: 55: 5: 0.1: 40: 50; the mass ratio of the graphene oxide to the epoxy resin to the acetone to the N-vinyl carbazole to the diphenyl silanediol to the azodiisobutyronitrile is 3: 100: 150: 15: 30: 3; the mass ratio of the nano powder to the isolating layer precursor is 78: 100; the mass concentration of the ammonia water is 8.5 percent; the molecular weight of the polyvinyl alcohol is 1500-2000; the thicknesses of the separation layer precursor, the reinforcing layer precursor and the support layer precursor on the heat-resistant substrate are respectively 50 micrometers, 500 micrometers and 260 micrometers.
Preparing an aluminum gallium nitride/gallium nitride layer by an epitaxial method by adopting the conventional sapphire substrate; then preparing an active region table board, a gate medium, an ohmic contact window and an electrode to obtain the terahertz wave detector, and carrying out 1.0 THz application test, wherein the photocurrent is 2.1nA and the noise isopower is 10nW/Hz at normal temperature0.5The responsivity is 106mA/W, and the response time is 12 ps; under liquid nitrogen, the photocurrent is 2.5nA, and the noise equipower is 1nW/Hz0.5The responsivity is 287mA/W, and the response time is 6 ps; at 80 ℃, the photocurrent is 1.1nA, and the noise equipower is 196nW/Hz0.5The responsivity was 37mA/W and the response time was 58 ps.
The invention has the advantages of excellent testing performance at room temperature, good testing performance at the environment exceeding room temperature, and unexpected technical effect.
Claims (5)
1. A method for manufacturing a substrate for a device for terahertz wave detection includes the steps of:
(1) under the protection of nitrogen, mixing ammonium hexachloroiridate, hydrated nickel nitrate, ammonium molybdate, ethanol and propionic acid; then refluxing and stirring for 5 minutes, and then adding ammonia water; after reacting for 10 minutes, naturally cooling to room temperature, adding ethyl acetate for coagulation and centrifugation; washing the centrifugal precipitate with water, and dispersing in ethanol to obtain a dispersion system; then adding strontium nitrate, cobalt nitrate and water, stirring for 10 minutes, adding samarium sesquichloride, and stirring for 1 hour to obtain a precursor of the supporting layer;
(2) adding polyvinyl alcohol, hydrogen peroxide and tetraphenylporphyrin iron into the dispersion system, stirring for 1 hour at 50 ℃, then adding ethyl naphthoyl acetate and dibutyl phthalate, refluxing and stirring for 10 minutes, and then concentrating to obtain a concentrate with the solid content of 80%; carrying out hypergravity treatment on the concentrate; then freeze-drying to obtain nanometer powder; the rotating speed of the supergravity treatment is 35000-40000 rpm; the flow rate of the concentrate is 80-90 mL/min;
(3) adding acetone into graphene oxide and epoxy resin, refluxing and stirring for 20 minutes, adding N-vinylcarbazole and diphenylsilanediol, continuously stirring for 10 minutes, adding azobisisobutyronitrile, and stirring for 30 minutes to obtain an isolation layer precursor;
(4) adding the nano powder into the precursor of the isolation layer, stirring for 5 minutes, adding the carbon nano tube, and stirring for 10 minutes to obtain a precursor of the reinforcing layer;
(5) sequentially coating an isolation layer precursor, a reinforcing layer precursor and a supporting layer precursor on a heat-resistant substrate to obtain a substrate; after each application, it was dried at room temperature.
2. The method according to claim 1, wherein the mass ratio of ammonium hexachloroiridate, hydrated nickel nitrate, ammonium molybdate, ethanol, propionic acid, ammonia water, strontium nitrate, cobalt nitrate, water and samarium trimaran is 15: 45: 30: 150: 80: 50: 5: 10: 100: 5; the mass ratio of the centrifugal precipitate, the polyvinyl alcohol, the hydrogen peroxide, the iron tetraphenylporphyrin, the ethyl naphthoyl acetate and the dibutyl phthalate is 15: 55: 5: 0.1: 40: 50; the mass ratio of the graphene oxide to the epoxy resin to the acetone to the N-vinyl carbazole to the diphenyl silanediol to the azodiisobutyronitrile is 3: 100: 150: 15: 30: 3; the mass ratio of the nano powder to the isolating layer precursor is 78: 100.
3. The production method according to claim 1, wherein the mass concentration of the aqueous ammonia is 8.5%; the molecular weight of the polyvinyl alcohol is 1500-2000.
4. The method of claim 1, wherein the thickness of the release layer precursor, the reinforcement layer precursor, and the support layer precursor on the heat-resistant substrate is 50 micrometers, 500 micrometers, and 260 micrometers, respectively.
5. A substrate for a device for terahertz wave detection produced by the production method according to claim 1.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010123602A1 (en) * | 2009-01-28 | 2010-10-28 | Applied Thin Films Inc. | High temperature stable amorphous silica-rich aluminosilicates |
| CN101915620A (en) * | 2010-08-20 | 2010-12-15 | 电子科技大学 | Vanadium oxide thin film for microbolometer and preparation method thereof |
| CN102593047A (en) * | 2012-02-24 | 2012-07-18 | 温州大学 | Preparation method of conductive film pattern layer based on oil-solubility nano-particle ink |
| CN103487953A (en) * | 2013-08-20 | 2014-01-01 | 中国工程物理研究院流体物理研究所 | All-optically controlled terahertz intensity modulator and terahertz intensity modulator |
| CN106433122A (en) * | 2016-09-07 | 2017-02-22 | 深圳先进技术研究院 | Modified cyanate ester composite material, and preparation method and application thereof |
| CN106486541A (en) * | 2016-10-24 | 2017-03-08 | 青岛大学 | A kind of regulation and control method of indium oxide nanometer fiber field-effect transistor electric property |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0798834A (en) * | 1993-09-29 | 1995-04-11 | Victor Co Of Japan Ltd | Magnetic recording medium |
| JP4759211B2 (en) * | 2002-10-01 | 2011-08-31 | 日本化学工業株式会社 | Method for producing perovskite-type barium titanate powder |
| GB2399541A (en) * | 2003-03-18 | 2004-09-22 | Nanomagnetics Ltd | Production of nanoparticulate thin films |
| CN102544221B (en) * | 2012-01-20 | 2014-08-13 | 中国科学院上海技术物理研究所 | Method for preparing sapphire substrate-based wide-band film type photoelectric detector |
| KR101690847B1 (en) * | 2012-02-08 | 2016-12-28 | 닛뽕소다 가부시키가이샤 | Organic-inorganic composite thin film |
| CN104916733A (en) * | 2015-05-18 | 2015-09-16 | 浙江大学 | Amorphous ZnSnO thin film transistor type ultraviolet detector and preparation method thereof |
| CN105441013B (en) * | 2015-11-26 | 2017-12-26 | 河南豫冠化工科技开发有限公司 | The preparation technology of water proof and wearable two-component resin adhesive |
| CN106129135B (en) * | 2016-07-20 | 2017-12-08 | 电子科技大学 | Terahertz detector based on graphene field effect transistor and preparation method thereof |
| CN109256439B (en) * | 2017-06-26 | 2021-09-10 | 苏州科技大学 | Substrate precursor for terahertz wave detection device and preparation method thereof |
-
2017
- 2017-06-26 CN CN201810835959.5A patent/CN109256439B/en active Active
- 2017-06-26 CN CN201710495199.3A patent/CN107195729B/en active Active
- 2017-06-26 CN CN201810835958.0A patent/CN109273556B/en active Active
- 2017-06-26 CN CN201810836884.2A patent/CN108807603B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010123602A1 (en) * | 2009-01-28 | 2010-10-28 | Applied Thin Films Inc. | High temperature stable amorphous silica-rich aluminosilicates |
| CN101915620A (en) * | 2010-08-20 | 2010-12-15 | 电子科技大学 | Vanadium oxide thin film for microbolometer and preparation method thereof |
| CN102593047A (en) * | 2012-02-24 | 2012-07-18 | 温州大学 | Preparation method of conductive film pattern layer based on oil-solubility nano-particle ink |
| CN103487953A (en) * | 2013-08-20 | 2014-01-01 | 中国工程物理研究院流体物理研究所 | All-optically controlled terahertz intensity modulator and terahertz intensity modulator |
| CN106433122A (en) * | 2016-09-07 | 2017-02-22 | 深圳先进技术研究院 | Modified cyanate ester composite material, and preparation method and application thereof |
| CN106486541A (en) * | 2016-10-24 | 2017-03-08 | 青岛大学 | A kind of regulation and control method of indium oxide nanometer fiber field-effect transistor electric property |
Non-Patent Citations (1)
| Title |
|---|
| Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction;Dominique Coquillat等;《Optics Express》;20160105;第24卷(第1期);第271-282页 * |
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