CN106449724A - Top-emitting quantum dot light-emitting field effect transistor and preparation method thereof - Google Patents
Top-emitting quantum dot light-emitting field effect transistor and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
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- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
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Abstract
The invention provides a top-emitting quantum dot light-emitting field effect transistor, which comprises a light-emitting unit and a capacitor cell for controlling light-emitting unit current sequentially arranged from top to bottom, wherein the capacitor cell is a silica-based FET (Field Effect Transistor), and comprises a first electrode, an insulation layer and a second electrode arranged sequentially in a stacking way; the light-emitting unit is a top-emitting quantum dot light-emitting device, and comprises the second electrode, a quantum dot light-emitting layer and a transparent top electrode; the first electrode is arranged on a silica-based substrate, or is the silica-based substrate.
Description
Technical field
The invention belongs to display technology field, more particularly, to a kind of top emitting quantum dot light emitting field-effect transistor and its system
Preparation Method.
Background technology
In recent years, light emitting diode with quantum dots (QLED) is many because possessing high brightness, low-power consumption, wide colour gamut, easy processing etc.
Advantage obtains extensive concern and research in illumination and display field.Compare Organic Light Emitting Diode (OLED), equal
Under image quality, the energy saving of QLED is expected to reach the twice of OLED, and luminance will lift 30% to 40%.Meanwhile, QLED has and opens
Bright voltage is low, photoluminescence spectra halfwidth is narrow, emission wavelength and color can be adjusted and low by quantum dot particle size
The advantages of prepared by cost solution method, there is huge application potential in solid-state illumination and display field.In addition in microelectric technique
Under its development, field-effect transistor (FET) is one of most widely used device in current modern microelectronics.Existing at present
Document report is integrated with organic luminescent device by FET, makes FET be used for the driver element of FPD, voltage-controlled by transistor gate
Source-drain current control device processed lights.
High-performance channel transistor requires gate insulation layer to have good insulating properties and capacitive property, and more excellent
Device architecture and performance, represent device be organic light-emitting field effect transistor (OFET).The technology of preparing of OFET main flow includes
With hot evaporation and the vacuum coating technology being sputtered to representative, it has into, and film uniformity is high, thickness is controlled and relatively possesses higher
The advantages of field-effect mobility, shortcoming is that instrument and equipment is complicated, relatively costly, is unfavorable for that large-scale industrialization is applied.Pass
System channel transistor device launching light is projected by ITO and glass substrate, thus will lead to most of light through ITO/ glass
Glass substrate interface loses.Therefore, have must provide that a kind of luminous efficiency is high, display effect is good, low cost, can mass production field
Effect transistor.
Content of the invention
It is an object of the invention to provide a kind of top emitting quantum dot light emitting field-effect transistor is it is intended to solve existing field
Effect transistor instrument and equipment complexity, high cost, luminous efficiency is low, be unfavorable for the problem of industrialized production.
Another object of the present invention is to providing a kind of preparation method of top emitting quantum dot light emitting field-effect transistor.
The present invention is achieved in that a kind of top emitting quantum dot light emitting field-effect transistor, including from top to bottom successively
The luminescence unit of setting and the capacitor cell for controlling described luminescence unit electric current,
Described capacitor cell is silicon substrate FET, including the first electrode being cascading, insulating barrier and second electrode；
Described luminescence unit is top emitting quantum dot light emitting device, includes described second electrode, quantum dot light emitting layer and saturating
Bright top electrode,
Wherein, described first electrode is arranged in silicon-based substrate；Or described first electrode is silicon-based substrate.
Accordingly, a kind of preparation method of top emitting quantum dot light emitting field-effect transistor, comprises the following steps：
Silicon-based substrate is provided；
First electrode, insulating barrier and second electrode, described first electrode, insulating barrier are sequentially depositing on described silicon-based substrate
Form capacitor cell with second electrode；
Quantum dot light emitting layer, transparent top electrode are sequentially depositing on described second electrode, described second electrode, quantum dot are sent out
Photosphere and described transparent top electrode form top emitting quantum dot light emitting device；
Wherein, described insulating barrier, described quantum dot light emitting layer are all prepared using solution processing method.
And, a kind of preparation method of top emitting quantum dot light emitting field-effect transistor, comprise the following steps：
Silicon-based substrate is provided；
Described silicon-based substrate is placed in annealing in oxygen atmosphere so as to surface forms silicon oxide layer；
On described silicon oxide layer successively sink second electrode, described silicon-based substrate, silicon oxide layer and second electrode shape
Become capacitor cell；
Quantum dot light emitting layer, transparent top electrode are sequentially depositing on described second electrode, described second electrode, quantum dot are sent out
Photosphere and described transparent top electrode form top emitting quantum dot light emitting device；
Wherein, described quantum dot light emitting layer is prepared using solution processing method.
Using top emitting device (TLED：Top emitting LED) launching light directly can be projected by transparency electrode,
Device performance can be improved by high degree.Because top emitting device requires the single-pass of light path, silicon substrate etc. therefore can be adopted opaque
Substrate, and fully it is combined with the advantages such as silicon-based substrate low cost, high integration.
The top emitting quantum dot light emitting field-effect transistor that the present invention provides, on the one hand, compared to bottom emitting type device, measures
Son puts the launching light of luminescent layer without bottom glass substrate outgoing, but directly by described transparent top electrode from top outgoing,
Improve luminescence unit quantum dot light emitting device along the light extraction efficiency of the emergent light of device direction, be suitable for use as computer, movement sets
Standby display screen；On the other hand, the present invention adopts silicon-based substrate as substrate or first electrode, is conducive to improving the integrated of circuit
Degree, reduces production cost simultaneously, is more suitable for the active drive with larger open rate and increasingly complex circuit design requirements
Luminescent device.Additionally, the present invention adopts quantum dot light emitting device as the driving luminescent layer of field-effect transistor, there is low work(
The advantage of consumption, wide colour gamut and easy processing.
The preparation method of the top emitting quantum dot light emitting field-effect transistor that the present invention provides, sends out preparation using solution processing
Each functional layer in addition to electrode, not only process is simple is easily-controllable, and is applied to commercial and produces.
Brief description
Fig. 1 is that first electrode provided in an embodiment of the present invention is arranged in silicon-based substrate, first electrode is sent out for the top of anode
Penetrate the structural representation of quantum dot light emitting field-effect transistor；
Fig. 2 is that first electrode provided in an embodiment of the present invention is arranged in silicon-based substrate, first electrode is pushed up for the pole of negative electrode
The structural representation of emissive quantum dots channel transistor；
Fig. 3 is the top emitting quantum dot light emitting field-effect that first electrode provided in an embodiment of the present invention is p-type silicon-based substrate
The structural representation of transistor；
Fig. 4 is the top emitting quantum dot light emitting field-effect that first electrode provided in an embodiment of the present invention is N-type silicon-based substrate
The structural representation of transistor.
Specific embodiment
In order that the technical problem to be solved in the present invention, technical scheme and beneficial effect become more apparent, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only in order to explain
The present invention, is not intended to limit the present invention.
In conjunction with Fig. 1-4, the present invention implements and provides top emitting quantum dot light emitting field-effect transistor, including from top to bottom
The luminescence unit setting gradually and the capacitor cell for controlling described luminescence unit electric current,
Described capacitor cell is silicon substrate FET, including the first electrode 1 being cascading, insulating barrier 2 and second electrode 3；
Described luminescence unit is top emitting quantum dot light emitting device, including described second electrode 3, quantum dot light emitting layer 5 and
Transparent top electrode 7,
Wherein, described first electrode 1 is arranged in silicon-based substrate 0；Or described first electrode 1 is silicon-based substrate.
Specifically, top emitting quantum dot light emitting field-effect transistor described in the embodiment of the present invention, including from top to bottom successively
The luminescence unit of setting and the capacitor cell for controlling described luminescence unit electric current.Wherein, described capacitor cell is silicon substrate
FET, described luminescence unit is top emitting quantum dot light emitting device.The luminescent designs of top emitting, can effectively improve quantum dot and send out
The luminous efficiency of optical device, so that quantum dot light emitting field-effect transistor is applied to the display screens such as computer, mobile device use
On the way.Further, because top emitting device requires the single-pass of light path, the embodiment of the present invention can adopt the opaque substrate of silicon substrate,
Not only contribute to ensure the single-pass of light path, and there is the advantages such as low cost, high integration.
Described in the embodiment of the present invention, first electrode 1 is arranged in silicon-based substrate 0；Or described first electrode 1 is silicon-based substrate,
Be conducive to improving the integrated level of circuit, reduce production cost simultaneously, be more suitable for that there is larger open rate and increasingly complex electricity
The active drive luminescent device of road design requirement.
Preferably, for equilbrium carrier efficiency, improve carrier mobility, described luminescence unit also includes hole injection
At least one of which in layer (in figure does not mark), hole transmission layer 6, electron injecting layer (in figure does not mark), electron transfer layer 4.Enter
One step, described hole injection layer, hole transmission layer 6, quantum dot light emitting layer 5, electron injecting layer and electron transfer layer 4 all adopt
Solution processing method prepares, and described solution processing method includes but is not limited to spin coating.Quantum dot using the preparation of whole soln method is sent out
Optical device, has the advantages that process is simple, easily operated control, but produces for commercial.
As the first situation of the embodiment of the present invention, described first electrode 1 is arranged in silicon-based substrate 0.Now, described
Insulating barrier 2 is dielectric material.Wherein, described dielectric material is transparent dielectric material or nontransparent dielectric material it is preferred that described
Transparent dielectric material includes PMMA, at least one in polyimides, and described nontransparent dielectric material includes BaTiO3/ PVDF is multiple
Close slurry.Preferably described dielectric material, has good insulating properties and capacitive property, is conducive to improving top emitting quantum dot
The overall performance of channel transistor.Certainly, not limited to this.Further, described BaTiO3/ PVDF composite mortar is preferred
Composite mortar for solid content volumn concentration≤60%.The insulating barrier 2 of this preferred dielectric material preparation, has preferably
Insulating properties and capacitive property, are more beneficial for the optimization of transistor performance.
According to the difference of electrode setting, the first situation of the embodiment of the present invention can be divided into two kinds of concrete situations.
As shown in figure 1, as a specific embodiment, a kind of top emitting quantum dot light emitting field-effect transistor, including from
On down set gradually luminescence unit, for controlling capacitor cell and the silicon-based substrate 0 of described luminescence unit electric current,
Described capacitor cell is silicon substrate FET, includes the first electrode 1 being cascading in described silicon-based substrate 0, exhausted
Edge layer 2 and second electrode 3；
Described luminescence unit is top emitting quantum dot light emitting device, passes including the second electrode 3 being cascading, electronics
Defeated layer 4, quantum dot light emitting layer 5, hole transmission layer 6 and transparent top electrode 7,
Wherein, described insulating barrier 2 is dielectric material, and described first electrode 1 is anode, and described second electrode 3 is negative electrode, institute
Stating transparent top electrode 7 is anode.
As shown in Fig. 2 as a specific embodiment, a kind of top emitting quantum dot light emitting field-effect transistor, including from
On down set gradually luminescence unit, for controlling capacitor cell and the silicon-based substrate 0 of described luminescence unit electric current,
Described capacitor cell is silicon substrate FET, includes the first electrode 1 being cascading in described silicon-based substrate 0, exhausted
Edge layer 2 and second electrode 3；
Described luminescence unit is top emitting quantum dot light emitting device, passes including the second electrode 3 being cascading, hole
Defeated layer 6, quantum dot light emitting layer 5, electron transfer layer 4 and transparent top electrode 7,
Wherein, described insulating barrier 2 is dielectric material, and described first electrode 1 is negative electrode, and described second electrode 3 is anode, institute
Stating transparent top electrode 7 is negative electrode.
In above-described embodiment, described first electrode 1 is the grid of described silicon substrate FET, and described second electrode 3 is described simultaneously
The source electrode of silicon substrate FET and the hearth electrode of described top emitting quantum dot light emitting device, described transparent top electrode 7 is simultaneously as described silicon
The drain electrode of based fet.
As the second situation of the embodiment of the present invention, described first electrode 1 is silicon-based substrate.Now it is preferred that described
Insulating barrier 2 is Si oxide.Described Si oxide can be obtained by directly carrying out surface treatment to described silicon-based substrate, not only
Method is simple and reliable, and thus obtained film is uniform and stable, and insulating properties and capacitive property are preferable.Specifically, will be described
Silicon-based substrate is made annealing treatment in oxygen atmosphere, forms one layer of silicon oxide layer as insulating barrier 2 on its surface.
According to the difference of electrode setting, the second situation of the embodiment of the present invention can be divided into two kinds of concrete situations.
As shown in figure 3, as a specific embodiment, a kind of top emitting quantum dot light emitting field-effect transistor, including from
On the luminescence unit that down sets gradually and the capacitor cell for controlling described luminescence unit electric current,
Described capacitor cell is silicon substrate FET, includes the first electrode 1 being cascading in described silicon-based substrate, exhausted
Edge layer 2 and second electrode 3；
Described luminescence unit is top emitting quantum dot light emitting device, passes including the second electrode 3 being cascading, electronics
Defeated layer 4, quantum dot light emitting layer 5, hole transmission layer 6 and transparent top electrode 7,
Wherein, described first electrode 1 is p-type silicon-based substrate, and described insulating barrier 2 is Si oxide, and described first electrode 1
For anode, described second electrode 3 is negative electrode, and described transparent top electrode 7 is anode.
In the present embodiment, described p-type silicon-based substrate, as the grid of described silicon substrate FET, is electrically connected with positive pole.Described second
The source electrode simultaneously as described silicon substrate FET for the electrode 3 and the hearth electrode of described top emitting quantum dot light emitting device, described transparent top electricity
Pole 7 is simultaneously as the drain electrode of described silicon substrate FET.
As shown in figure 4, as a specific embodiment, a kind of top emitting quantum dot light emitting field-effect transistor, including from
On the luminescence unit that down sets gradually and the capacitor cell for controlling described luminescence unit electric current,
Described capacitor cell is silicon substrate FET, includes the first electrode 1 being cascading in described silicon-based substrate, exhausted
Edge layer 2 and second electrode 3；
Described luminescence unit is top emitting quantum dot light emitting device, passes including the second electrode 3 being cascading, hole
Defeated layer 6, quantum dot light emitting layer 5, electron transfer layer 4 and transparent top electrode 7,
Wherein, described first electrode 1 is N-type silicon-based substrate, and described insulating barrier 2 is Si oxide, and described first electrode 1
For negative electrode, described second electrode 3 is anode, and described transparent top electrode 7 is negative electrode.
In the present embodiment, described N-type silicon-based substrate, as the grid of described silicon substrate FET, is electrically connected with negative electrode.Described second
The source electrode simultaneously as described silicon substrate FET for the electrode 3 and the hearth electrode of described top emitting quantum dot light emitting device, described transparent top electricity
Pole 7 is simultaneously as the drain electrode of described silicon substrate FET.
Specifically, described first electrode 1 be anode when, optional high work function material, including but not limited to Au, Pt and its
Alloy material；When described first electrode 1 is negative electrode, optional low-work-function material, including but not limited to aluminium, silver etc..
The source electrode simultaneously as described silicon substrate FET for the described second electrode 3 and the bottom of described top emitting quantum dot light emitting device
Electrode, when described second electrode 3 is anode, selects high work function material, including but not limited to Au, Pt, alloy part material；
When described second electrode 3 is negative electrode, the metal material with good light reflective properties, including but not limited to aluminium, silver can be selected；
Low-work-function material, including but not limited to aluminium, calcium, nickel can also be selected.The thickness of described second electrode 3 is preferably 80-
100nm.
Described electron transfer layer 4 and described electron injecting layer can be using the conventional electric transmission in this area or injection materials
Material, specifically, described electron transfer layer 4 preferably has the N-shaped zinc oxide of high electronic transmission performance, and described electron injecting layer includes
CsF、LiF、CsCO3, also include other Electrolyte type electron transport layer materials.Preferably, described electron transfer layer 4 and described electricity
The thickness of sub- implanted layer is individually for 30-60nm.
Described quantum dot light emitting layer 5 can be made using quanta point material commonly used in the art, described quantum dot light emitting layer 5
Thickness be 10-100nm.
Described hole transmission layer 6, hole injection layer can also adopt hole transport commonly used in the art or injection material system
Standby, and described hole transmission layer 6, hole injection layer can be selected according to actual needs, thickness is 0-100nm, preferably 40-
50nm.
When described transparent top electrode 7 is anode, can be ITO or nano silver wire transparency electrode；Described transparent top electrode 7 is
During negative electrode, can be ITO or other transparent electrode materials.
Top emitting quantum dot light emitting field-effect transistor provided in an embodiment of the present invention, on the one hand, compared to bottom emitting type
Device, the launching light of quantum dot light emitting layer 5 without bottom glass substrate outgoing, but directly by described transparent top electrode 7 from
Top outgoing, improves luminescence unit quantum dot light emitting device along the light extraction efficiency of the emergent light of device direction, is suitable for use as electricity
Brain, mobile device display screen；On the other hand, the embodiment of the present invention adopts silicon-based substrate as substrate or first electrode, is conducive to
Improve the integrated level of circuit, reduce production cost simultaneously, be more suitable for that there is larger open rate and increasingly complex circuit design
The active drive luminescent device requiring.Additionally, the embodiment of the present invention adopts quantum dot light emitting device as field-effect transistor
Drive luminescent layer, there is low-power consumption, wide colour gamut and easy processing.
Described in the embodiment of the present invention, top emitting quantum dot light emitting field-effect transistor can be prepared by following methods.
Accordingly, a kind of preparation method of top emitting quantum dot light emitting field-effect transistor, comprises the following steps：
S01., silicon-based substrate is provided；
S02., first electrode, insulating barrier and second electrode be sequentially depositing on described silicon-based substrate, described first electrode, absolutely
Edge layer and second electrode form capacitor cell；
S03., quantum dot light emitting layer, transparent top electrode, described second electrode, quantum are sequentially depositing on described second electrode
Point luminescent layer and described transparent top electrode form top emitting quantum dot light emitting device；
Wherein, described insulating barrier, described quantum dot light emitting layer are all prepared using solution processing method.
Specifically, in above-mentioned steps S01, described silicon-based substrate is preferably past the silicon-based substrate after cleaning treatment.Specifically
Preferably, cleaned using standard Shiraki method, including ultrasonic, multistep strong acid treatment of organic solvent environment etc. to remove surface
Oxide layer and organic impurities and elementary metal impurities, improve the adhesive force of subsequent material.
In above-mentioned steps S02, in described silicon-based substrate by way of evaporation deposition of first electrode as FET grid.Institute
The material stating first electrode is determined according to its specific purposes (male or female).
Spin coating one layer insulating on the first electrode, when described insulating barrier is polyimides, described polyamides is sub-
Amine and N,N-dimethylformamide by volume 1：After 1 ratio carries out proportioning dilution, using the such as spin coating of solution processing method by institute
State polyimide solution and be deposited on described first electrode surface；Then by substrate good for spin coating first dried process in infrared case,
Drying time is 5-15min, handling return under argon gas protective gas atmosphere, and annealing temperature is 200-250 DEG C, and the time is 2-5
Hour, make annealing treatment 3 hours under the conditions of more preferably 220 DEG C.When described insulating barrier is BaTiO3During/PVDF composite mortar, can
Using sol evenning machine, composite is spin-coated on formation insulating barrier on sample, then places in drying box and (60-100 DEG C) is dried, treat
Can carry out repeating spin coating-drying process after solvent evaporation.
Described second electrode is deposited with described insulating barrier.Described first electrode, insulating barrier and second electrode form electric capacity
Unit.
In above-mentioned steps S03, solution processing method such as spin-coating method deposition quanta point material is adopted on described second electrode, so
Heat 10-15min under the conditions of 80-100 DEG C afterwards, remove residual solvent, form fine and close quantum dot film.It is specifically preferred,
Heat 10min by having deposited the sample after quanta point material and being placed on 80 DEG C of warm table.
Layer of transparent top electrode is prepared on described quantum dot light emitting layer, described transparent top electrode can be by sputtering legal system
Standby acquisition is prepared it is also possible to pass through solution processing method such as spin-coating method.Specifically, sputtering side is passed through on described quantum dot light emitting layer
Formula prepares one layer of ITO；Or one layer of nano silver wire-alcohol suspending liquid is prepared by spin coating method, obtain nano silver wire transparency electrode,
Wherein, the speed of rotation is 2800-3200rpm, is particularly preferred as 3000rpm.
Further, in the preparation process of described top emitting quantum dot light emitting device, be additionally included in quantum dot light emitting layer and
Deposition electron transfer layer, at least one of which of electron injecting layer between negative electrode；Pass in the deposition of hole of quantum dot light emitting layer and anode
At least one of which in defeated layer, hole injection layer.Described electron transfer layer, electron injecting layer, hole transmission layer, hole injection layer are equal
Prepared using solution processing method such as spin-coating method.
And, a kind of preparation method of top emitting quantum dot light emitting field-effect transistor, comprise the following steps：
Q01., silicon-based substrate is provided；
Q02. described silicon-based substrate is placed in annealing in oxygen atmosphere so as to surface forms silicon oxide layer；
Q03. on described silicon oxide layer successively sink second electrode, described silicon-based substrate, silicon oxide layer and second electricity
Pole forms capacitor cell；
Q04., quantum dot light emitting layer, transparent top electrode, described second electrode, quantum are sequentially depositing on described second electrode
Point luminescent layer and described transparent top electrode form top emitting quantum dot light emitting device；
Wherein, described quantum dot light emitting layer is prepared using solution processing method.
Specifically, in above-mentioned steps Q01, described silicon-based substrate as the grid of described capacitor cell, when described silicon substrate lining
When bottom connects positive pole, using p-type silicon-based substrate；When described silicon-based substrate connects negative electrode, using N-type silicon-based substrate.Preferably, to institute
State silicon-based substrate and carry out surface cleaning process, processing method is with above-mentioned S01.
In above-mentioned steps Q02, described silicon-based substrate is placed in oxygen atmosphere and makes annealing treatment, can efficiently, quickly
Form one layer of uniform, stable silicon oxide layer as insulating barrier, thus, it is possible to it is brilliant to simplify top emitting quantum dot light emitting field-effect
The preparation technology of body pipe.
In above-mentioned steps Q03, described second electrode is deposited with described silicon oxide layer.Described first electrode, insulating barrier
Form capacitor cell with second electrode.
In above-mentioned steps Q04, described second electrode is sequentially depositing quantum dot light emitting layer, transparent top electrode method such as
Described in step S03, also as described in S03, in order to save length, here is omitted for its preferable case.
The preparation method of top emitting quantum dot light emitting field-effect transistor provided in an embodiment of the present invention, using solution processing
Send out each functional layer in addition to electrode for the preparation, not only process is simple is easily-controllable, and be applied to commercial and produce.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (10)
1. what a kind of top emitting quantum dot light emitting field-effect transistor it is characterised in that include set gradually from top to bottom is luminous
Unit and the capacitor cell for controlling described luminescence unit electric current,
Described capacitor cell is silicon substrate FET, including the first electrode being cascading, insulating barrier and second electrode；
Described luminescence unit is top emitting quantum dot light emitting device, including described second electrode, quantum dot light emitting layer and transparent top
Electrode,
Wherein, described first electrode is arranged in silicon-based substrate；Or described first electrode is silicon-based substrate.
2. top emitting quantum dot light emitting field-effect transistor as claimed in claim 1 is it is characterised in that described first electrode sets
Put in silicon-based substrate, described insulating barrier is dielectric material；Or described first electrode is silicon-based substrate, described insulating barrier is silica
Compound.
3. top emitting quantum dot light emitting field-effect transistor as claimed in claim 2 is it is characterised in that described dielectric material is
Transparent dielectric material or nontransparent dielectric material, wherein, described transparent dielectric material include PMMA, in polyimides at least one
Kind, described nontransparent dielectric material includes BaTiO3/ PVDF composite mortar.
4. described top emitting quantum dot light emitting field-effect transistor as arbitrary in claim 1-3 is it is characterised in that described light
Unit also includes hole injection layer, hole transmission layer, electron injecting layer, at least one of which in electron transfer layer.
5. top emitting quantum dot light emitting field-effect transistor as claimed in claim 1 is it is characterised in that described first electrode sets
Put in silicon-based substrate, described insulating barrier is dielectric material, and described first electrode be anode, described second electrode is negative electrode,
Described transparent top electrode is anode, and described top emitting quantum dot light emitting device includes second electrode, the electronics being cascading
Transport layer, quantum dot light emitting layer, hole transmission layer and transparent top electrode.
6. top emitting quantum dot light emitting field-effect transistor as claimed in claim 1 is it is characterised in that described first electrode sets
Put in silicon-based substrate, described insulating barrier is dielectric material, and described first electrode be negative electrode, described second electrode is anode,
Described transparent top electrode is negative electrode, and described top emitting quantum dot light emitting device includes second electrode, the hole being cascading
Transport layer, quantum dot light emitting layer, electron transfer layer and transparent top electrode.
7. top emitting quantum dot light emitting field-effect transistor as claimed in claim 1 is it is characterised in that described first electrode is
P-type silicon-based substrate, described insulating barrier is Si oxide, and described first electrode is anode, and described second electrode is negative electrode, described
Transparent top electrode is anode, and described top emitting quantum dot light emitting device includes second electrode, the electric transmission being cascading
Layer, quantum dot light emitting layer, hole transmission layer and transparent top electrode.
8. top emitting quantum dot light emitting field-effect transistor as claimed in claim 1 is it is characterised in that described first electrode is
N-type silicon-based substrate, described insulating barrier is Si oxide, and described first electrode is negative electrode, and described second electrode is anode, described
Transparent top electrode is negative electrode, and described top emitting quantum dot light emitting device includes second electrode, the hole transport being cascading
Layer, quantum dot light emitting layer, electron transfer layer and transparent top electrode.
9. a kind of preparation method of top emitting quantum dot light emitting field-effect transistor, comprises the following steps：
Silicon-based substrate is provided；
First electrode, insulating barrier and second electrode, described first electrode, insulating barrier and are sequentially depositing on described silicon-based substrate
Two electrodes form capacitor cell；
Quantum dot light emitting layer, transparent top electrode, described second electrode, quantum dot light emitting layer are sequentially depositing on described second electrode
Form top emitting quantum dot light emitting device with described transparent top electrode；
Wherein, described insulating barrier, described quantum dot light emitting layer are all prepared using solution processing method.
10. a kind of preparation method of top emitting quantum dot light emitting field-effect transistor, comprises the following steps：
Silicon-based substrate is provided；
Described silicon-based substrate is placed in annealing in oxygen atmosphere so as to surface forms silicon oxide layer；
On described silicon oxide layer successively sink second electrode, described silicon-based substrate, silicon oxide layer and second electrode form electricity
Hold unit；
Quantum dot light emitting layer, transparent top electrode, described second electrode, quantum dot light emitting layer are sequentially depositing on described second electrode
Form top emitting quantum dot light emitting device with described transparent top electrode；
Wherein, described quantum dot light emitting layer is prepared using solution processing method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106876435A (en) * | 2017-03-03 | 2017-06-20 | 京东方科技集团股份有限公司 | A kind of manufacture method of luminescent device, display device and luminescent device |
| CN111180597A (en) * | 2019-03-14 | 2020-05-19 | 广东聚华印刷显示技术有限公司 | Top-emission vertical light-emitting transistor and preparation method and application thereof |
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| CN104718638A (en) * | 2012-08-25 | 2015-06-17 | 破立纪元有限公司 | Light-emitting transistors with improved performance |
| US20160155970A1 (en) * | 2013-06-27 | 2016-06-02 | Samsung Electronics Co., Ltd. | Vertical organic light-emitting transistor and organic led illumination apparatus having the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104718638A (en) * | 2012-08-25 | 2015-06-17 | 破立纪元有限公司 | Light-emitting transistors with improved performance |
| US20160155970A1 (en) * | 2013-06-27 | 2016-06-02 | Samsung Electronics Co., Ltd. | Vertical organic light-emitting transistor and organic led illumination apparatus having the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876435A (en) * | 2017-03-03 | 2017-06-20 | 京东方科技集团股份有限公司 | A kind of manufacture method of luminescent device, display device and luminescent device |
| CN111180597A (en) * | 2019-03-14 | 2020-05-19 | 广东聚华印刷显示技术有限公司 | Top-emission vertical light-emitting transistor and preparation method and application thereof |
| CN111180597B (en) * | 2019-03-14 | 2023-02-03 | 广东聚华印刷显示技术有限公司 | Top-emission vertical light-emitting transistor and preparation method and application thereof |
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