CN102097598B - Organic light-emitting device and production method thereof - Google Patents
Organic light-emitting device and production method thereof Download PDFInfo
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- CN102097598B CN102097598B CN201010574249.5A CN201010574249A CN102097598B CN 102097598 B CN102097598 B CN 102097598B CN 201010574249 A CN201010574249 A CN 201010574249A CN 102097598 B CN102097598 B CN 102097598B
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Abstract
The invention discloses an organic light-emitting device, which comprises a substrate, an anode layer, a cathode layer, at least two light-emitting units and at least one intermediate junction layer, wherein the at least two light-emitting units and the at least one intermediate junction layer are arranged between the anode layer and the cathode layer; and an electrode is positioned on the surface of the transparent substrate. The organic light-emitting device is characterized in that: the intermediate junction layer is positioned between two adjacent light-emitting units, and comprises an organic ultrathin layer, an ultrathin metal layer and an ultrathin metal compound layer; the ultrathin metal layer is positioned between the organic ultrathin layer and the ultrathin metal compound layer; the organic ultrathin layer is a buffer layer; the ultrathin metal layer is an N-type layer; and the ultrathin metal compound layer is a P-type layer. The three undoped ultrathin layers are introduced into the structure of the intermediate junction layer so as to simplify an intermediate junction layer production process, improve the production efficiency of the device and obtain the organic light-emitting device with high luminous efficiency and long service life under low current density drive.
Description
Technical field
The present invention relates to technical field of organic electroluminescence in electronic devices and components, be specifically related to a kind of organic electroluminescence device with ultra-thin articulamentum structure.
Background technology
Organic electroluminescent refers to luminous organic material luminous phenomenon under the excitation of electric current or electric field.The people such as Pope of 1963 Nian， New York Univ USAs (J.Chem.Phys., 1963,38,2042) reported first the electro optical phenomenon of organic material monocrystalline anthracene, opened the prelude of organic electroluminescent research.Nineteen eighty-two, Vincett research group (Thin SolidFilms, 1982,94,171) adopts vacuum vapour deposition to be successfully prepared the anthracene single crystal film that thickness is 0.6 μ m, and the operating voltage of organic electroluminescent is dropped in 30V.To 1987 C.W.Tang of Nian， Kodak and S.A.Vanslyke (Appl.Phys.lett., 1987,51,913) on the basis of summing up forefathers' research, invented the device of sandwich structure, successfully having prepared quantum efficiency is 1%, and brightness is greater than 1000cd/m
2organic electroluminescence device (Organic light-emitting devices, OLED).This breakthrough has excited the research enthusiasm of people for OLED, makes OLED become rapidly worldwide popular research topic.All many-sides such as people are synthetic at material, device structure design, carrier transport conduct in-depth research, and the performance of organic electroluminescence device is moved closer to or reach practical level.
At present, the key problem of OLED research is the life-span of improving the luminous efficiency of device and extending device.Although by selecting suitable organic material and device architecture reasonable in design, made the indices of OLED luminescent properties be greatly improved,, the life-span of device is difficult to rise to a desirable level always.One of major reason that affects the OLED life-span is the oven ageing that the large electric current that flows through device causes device.Thereby, study a kind of high efficiency device moving very urgent under low current density.2003, first professor Kido of Japanese chevron university proposed the concept of tandem OLED, and they utilize BCP/V
2o
5as linkage unit, several luminescence units are together in series, discovery tandem OLED is compared with traditional OLED, has higher luminosity under same current density, and luminous efficiency is along with the number of series element, can become multiple to increase.In addition,, because the current density of tandem OLED is less, its life-span is also longer than traditional OLED.They also point out, the linkage unit in tandem OLED is the key that affects device performance.After this, the research institutions such as U.S. kodak company, City University of Hong Kong, Chinese Changchun Ying Huasuo, Univ California-Los Angeles USA, Taiwan National Chiao Tung University all attempt having adopted different linkage unit structures, and the device property of tandem OLED and physical mechanism have been carried out to the exploration being highly profitable.
In OLED, all electroluminescence cells play electricity series connection by insert intermediate connecting layer between the electroluminescence cell of any adjacency.Intermediate connecting layer is played an important role in OLED, thereby this OLED can be used.Intermediate connecting layer is main in prior art OLED to be used organic material, metal or metallic compound to combine and forms.It has been generally acknowledged that, intermediate connecting layer may produce electronics and the hole that device needs, and the carrier density of device luminescent layer has been improved in these electronics and holes that produce at device inside, thereby has realized low current, the high-efficiency operation of device.So intermediate connecting layer is generally comprised of N-type doped layer (or electron injecting layer) and P type doped layer (or hole injection layer) double-layer structure.N-type doped layer adopts the metal (as Cs, Li, Mg) of low-power function to be doped in organic electron transport layer conventionally, and P type doped layer adopts F conventionally
4-TCNQ, WO
3be doped in hole transmission layer.This class formation can improve efficiency and the life-span of device effectively, still, preparation technology's more complicated of doping type intermediate connecting layer, very high to the control requirement of doping content and doping thickness, both increased cost, be unfavorable for again batch production.
Summary of the invention
Problem to be solved by this invention is: how a kind of organic electroluminescence device and preparation method thereof is provided, object is to overcome the restive problem of doping process, the preparation technology who simplifies intermediate connecting layer by preparing the method for the ultra-thin articulamentum of non-doping, obtains high-performance white light or monochromatic organic electroluminescence device.
Technical problem proposed by the invention is to solve like this: a kind of organic electroluminescence device is provided, comprise substrate, anode layer, cathode layer and be arranged on anode layer and cathode layer between at least two electroluminescence cells and at least one intermediate connecting layer, wherein a kind of electrode is positioned at transparent substrates surface, it is characterized in that, described intermediate connecting layer is between two electroluminescence cells of adjacency, intermediate connecting layer comprises organic superthin layer, ultra-thin metal layer and metallic compound superthin layer, described ultra-thin metal layer is between organic superthin layer and metallic compound superthin layer, wherein organic superthin layer is resilient coating, ultra-thin metal layer is N-type layer, metallic compound superthin layer is P type layer.
According to organic electroluminescence device provided by the present invention, it is characterized in that, described substrate is glass or flexible substrate or sheet metal, wherein flexible substrate is ultra-thin solid-state thin slice, polyesters or poly-phthalimide compounds; Described anode layer is metal-oxide film or metallic film or conducting polymer thin film, this metal-oxide film is ito thin film or zinc-oxide film or zinc tin oxide film, this metallic film is the metallic film of gold or copper or silver, and this conducting polymer thin film is PEDOT:PSS or PANI class organic conductive polymer.
According to organic electroluminescence device provided by the present invention, it is characterized in that, described electroluminescence cell comprises one or more in luminescent layer, hole transmission layer, electron transfer layer, hole injection layer and electron injecting layer.
According to organic electroluminescence device provided by the present invention, it is characterized in that, described organic electroluminescence device has two electroluminescence cells at least, and each electroluminescence cell has identical or different layer structures.
According to organic electroluminescence device provided by the present invention, it is characterized in that, described intermediate connecting layer has one deck at least, and each articulamentum unit of many intermediate connecting layers structure has identical or different layer structures.
According to organic electroluminescence device provided by the present invention, it is characterized in that, described organic electroluminescence device can produce white light or monochromatic light.
According to organic electroluminescence device provided by the present invention, it is characterized in that, described organic superthin layer material comprises Liq, Alq
3, PBD, Bphen, BCP, TPBi, BAlq, Bpy-OXD, BP-OXD-Bpy, TAZ, NTAZ, NBphen, Bpy-FOXD, XOD-7,3TPYMB, 2-NPIP, HNBphen, POPy2, BP4mPy, TmPyPB, BTB, BmPyPhB, Bepq2, DPPS, CuPc or PyPySPyPy.
According to organic electroluminescence device provided by the present invention, it is characterized in that, described ultra-thin metal layer material comprises Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, La, Ce, La, Nd, Sm, Eu, Al, Tb, Dy or Yb.
According to organic electroluminescence device provided by the present invention, it is characterized in that, described metallic compound Ultrathin Layer Materials comprises ITO, V
2o
5, WO
3, M
oo
3, Cs
2cO
3, MnO, NiMoO
4, CuMoO
4, FeCl
3, SbCl
5, Al
4c
3, LiF, FeF
3, AlF
3, CuS, ZnS, B
2s
3, GaAs, GaP, InP, CdSe, ZnTe, CdTe or SnTe.
According to organic electroluminescence device provided by the present invention, it is characterized in that, in described intermediate connecting layer, the thickness of organic superthin layer is that 0.1nm is to 20nm.
According to organic electroluminescence device provided by the present invention, it is characterized in that, in described intermediate connecting layer, the thickness of ultra-thin metal layer is that 0.1nm is to 10nm.
According to organic electroluminescence device provided by the present invention, it is characterized in that, in described intermediate connecting layer, the thickness of metallic compound superthin layer is that 0.1nm is to 20nm.
A preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
8. clean transparent substrates dry;
9. in transparent substrates, prepare conductive film as electrode;
10. the transparent substrates for preparing electrode layer is moved into vacuum chamber, under oxygen pressure ring border, carry out the preliminary treatment of low energy oxygen plasma;
11 by the substrate after processing in the vaporization chamber of high vacuum, start to carry out the preparation of film, according to device architecture, prepare successively the first electroluminescence cell, the first intermediate connecting layer, the second electroluminescence cell, the second intermediate connecting layer ... (N-1) electroluminescence cell, (N-1) intermediate connecting layer, N electroluminescence cell, N > I wherein, and N is integer, intermediate connecting layer comprises organic superthin layer, ultra-thin metal layer and metallic compound superthin layer, described ultra-thin metal layer is between organic superthin layer and metallic compound superthin layer, wherein organic superthin layer is resilient coating, ultra-thin metal layer is N-type layer, metallic compound superthin layer is P type layer,
12 are sent to by device the preparation of carrying out electrode in vacuum evaporation chamber;
13 are sent to glove box by the device of preparation encapsulates, and glove box is atmosphere of inert gases;
The photoelectric properties parameter of 14 test components.
According to organic electroluminescence device provided by the present invention, it is characterized in that, described intermediate connecting layer forms by one or several modes in vacuum evaporation, ion cluster bundle deposition, ion plating, DC sputtering deposition, RF sputter coating, ion beam sputtering deposition, ion beam assisted depositing, plasma reinforced chemical vapour deposition, high density inductive coupling plasma source chemical vapor deposition, catalyst chemical vapour deposition (CVD).
The present invention is from the angle of superthin layer, and breaks the thinking set that intermediate connecting layer is generally " two-layer " structure, preparation and the characteristic research of the New O LED of the intermediate connecting layer based on " three layers " superthin layer structure.By selecting suitable organic material, low workfunction metal and metallic compound material, the linkage unit structure of design based on organic superthin layer/ultra-thin metal layer/metallic compound superthin layer, wherein organic superthin layer is resilient coating, ultra-thin metal layer is N-type superthin layer (generation electronics), and metallic compound superthin layer is P type superthin layer (generation hole).The present invention is optimized each layer thickness parameter of linkage unit, and the impact of the linkage unit of research based on superthin layer on performance characteristicses such as the luminous efficiency of OLED and life-spans, lays the first stone for acquisition has high performance OLED.
The present invention has adopted the superthin layer articulamentum structure of non-doping, overcomes the defect in existing intermediate connecting layer doping techniques, can effectively simplify the preparation technology of device and control cost, and is convenient to large-scale production; This ultra-thin articulamentum structure can strengthen the injection of the electron hole of intermediate connecting layer, has reduced device current density, has improved luminous efficiency and the life-span of device.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation with the organic electroluminescence device of ultra-thin articulamentum structure provided by the present invention;
Fig. 2 is the structural representation of embodiment 1 provided by the present invention;
Fig. 3 is the structural representation of embodiment 2 provided by the present invention;
Fig. 4 is the structural representation of embodiment 5 provided by the present invention;
Fig. 5 is device current density-current efficiency curve of embodiment 1 provided by the present invention;
Fig. 6 is device current density-power efficiency curve of embodiment 1 provided by the present invention;
Fig. 7 is device voltage-brightness curve of embodiment 1 provided by the present invention.
Wherein, 1, substrate, 2, anode layer, 31, the first electroluminescence cell, 41, the first organic superthin layer, 51, the first ultra-thin metal layer, 61, the first metallic compound superthin layer, 32, the second electroluminescence cell, 42, the second organic superthin layer, 52, the second ultra-thin metal layer, 62 second metallic compound superthin layers, 3 (N-1), (N-1) electroluminescence cell, 4 (N-1), (N-1) organic superthin layer, 5 (N-1), (N-1) ultra-thin metal layer, 6 (N-1), (N-1) metallic compound superthin layer, 3N, N electroluminescence cell, 7, negative electrode, 8, power supply.
Embodiment
Technical scheme of the present invention is to provide a kind of organic electroluminescence device with ultra-thin articulamentum structure, as shown in Figure 1, the structure of device comprises transparent substrates 1, anode layer 2, the first electroluminescence cell 31, the first organic superthin layer 41, the first ultra-thin metal layer 51, the first metallic compound superthin layer 61, the second electroluminescence cell 32, the second organic superthin layer 42, the second ultra-thin metal layer 52, the second metallic compound superthin layer 62, (N-1) electroluminescence cell 3 (N-1), (N-1) organic superthin layer 4 (N-1), (N-1) ultra-thin metal layer 5 (N-1), (N-1) metallic compound superthin layer 6 (N-1), N electroluminescence cell 3N, cathode layer 7, additional power source 8, device sends white light or monochromatic light under the driving of additional power source 8.
As shown in Figure 2, the structure of device comprises transparent substrates 101, anode layer 201, the first hole transmission layer 301, sends the first electroluminescence cell 302, the first organic superthin layers 401 of blue light, the first ultra-thin metal layer 501, the first metallic compound superthin layer 601, the second hole transmission layers 311, send the second electroluminescence cell 312 of blue light, electron transfer layer 313, cathode layer 701, additional power source 801, device sends blue light under the driving of additional power source 801.
As shown in Figure 3, the structure of device comprises transparent substrates 101, anode layer 201, the first hole transmission layer 301, send the first electroluminescence cell 302 of blue light, the first electron transfer layer 303, the first organic superthin layer 401, the first ultra-thin metal layer 501, the first metallic compound superthin layer 601, the second hole transmission layer 311, send the second electroluminescence cell 312 of green glow, the second electron transfer layer 313, the second organic superthin layer 401, the second ultra-thin metal layer 501, the second metallic compound superthin layer 601, the 3rd hole transmission layer 321, send the 3rd electroluminescence cell 322 of ruddiness, the 3rd electron transfer layer 323, cathode layer 701, additional power source 801, device sends white light under the driving of additional power source 801.
As shown in Figure 4, the structure of device comprises transparent substrates 101, anode layer 201, the first hole transmission layer 301, sends the first electroluminescence cell 302, the first electron transfer layers 303 of gold-tinted, the first organic superthin layer 401, the first ultra-thin metal layer 501, the first metallic compound superthin layer 601, the second hole transmission layer 311, send the second electroluminescence cell 312, the second electron transfer layers 313 of gold-tinted, cathode layer 701, additional power source 801, device sends gold-tinted under the driving of additional power source 801.
The present invention in transparent substrates 1 be glass or flexible substrate or sheet metal, wherein flexible substrate is ultra-thin solid-state thin slice, polyesters or poly-phthalimide compounds; Described anode layer is metal-oxide film or metallic film or conducting polymer thin film, this metal-oxide film is ito thin film or zinc-oxide film or zinc tin oxide film, this metallic film is the metallic film of gold or copper or silver, and this conducting polymer thin film is PEDOT:PSS or PANI class organic conductive polymer.
Electroluminescence cell in the present invention is counted N and is more than or equal to 2, and each electroluminescence cell has identical or different layer structures.
Organic superthin number of plies N-1 in the present invention is more than or equal to 1, and each organic superthin layer has identical or different layer structures.
Ultra-thin metal number of plies N-1 in the present invention is more than or equal to 1, and each organic superthin layer has identical or different layer structures.
The ultra-thin number of plies N-1 of metallic compound in the present invention is more than or equal to 1, and each organic superthin layer has identical or different layer structures.
Organic superthin layer 4 (N-1) in the present invention comprises Liq, Alq
3, PBD, Bphen, BCP, TPBi, BAlq, Bpy-OXD, BP-OXD-Bpy, TAZ, NTAZ, NBphen, Bpy-FOXD, XOD-7,3TPYMB, 2-NPIP, HNBphen, POPy2, BP4mPy, TmPyPB, BTB, BmPyPhB, Bepq2, DPPS, CuPc or PyPySPyPy.
Ultra-thin metal layer 5 (N-1) in the present invention comprises Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, La, Ce, La, Nd, Sm, Eu, Al, Tb, Dy or Yb.
Metallic compound superthin layer 6 (N-1) in the present invention comprises ITO, V
2o
5, WO
3, M
oo
3, Cs
2cO
3, MnO, NiMoO
4, CuMoO
4, FeCl
3, SbCl
5, Al
4c
3, LiF, FeF
3, AlF
3, CuS, ZnS, B
2s
3, GaAs, GaP, InP, CdSe, ZnTe, CdTe or SnTe.
The thickness of the organic superthin layer 4 (N-1) in the present invention is that 0.1nm is to 20nm.
The thickness of the ultra-thin metal layer 5 (N-1) in the present invention is that 0.1nm is to 10nm.
The thickness of the metallic compound superthin layer 6 (N-1) in the present invention is that 0.1nm is to 20nm.
The OLED device architecture that adopts the present invention to prepare is exemplified below:
The ultra-thin articulamentum of blue coloured electroluminous unit/the first of glass/ITO/ first/... the blue coloured electroluminous unit/cathode layer of ultra-thin articulamentum/the of/the (N-1) blue coloured electroluminous unit/the (N-1) (N)
The ultra-thin articulamentum of glass/ITO/ the first green electroluminescent unit/the first/... ultra-thin articulamentum/the of/the (N-1) green electroluminescent unit/the (N-1) (N) green electroluminescent unit/cathode layer
The ultra-thin articulamentum of red electroluminescence cell/the first of glass/ITO/ first/... the red electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) red electroluminescence cell/the (N-1) (N)
The ultra-thin articulamentum of glass/ITO/ the first white electroluminescence unit/the first/... ultra-thin articulamentum/the of/the (N-1) white electroluminescence unit/the (N-1) (N) white electroluminescence unit/cathode layer
The ultra-thin articulamentum of yellow electroluminescence cell/the first of glass/ITO/ first/... the yellow electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) yellow electroluminescence cell/the (N-1) (N)
Red electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of glass/ITO/ first/ultra-thin articulamentum/the first green electroluminescent unit/ultra-thin articulamentum/the first
Yellow electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of glass/ITO/ first/ultra-thin articulamentum/the first
The ultra-thin articulamentum of blue coloured electroluminous unit/the first of glass/metal film/the first/... the blue coloured electroluminous unit/cathode layer of ultra-thin articulamentum/the of/the (N-1) blue coloured electroluminous unit/the (N-1) (N)
The ultra-thin articulamentum of glass/metal film/the first green electroluminescent unit/the first/... ultra-thin articulamentum/the of/the (N-1) green electroluminescent unit/the (N-1) (N) green electroluminescent unit/cathode layer
The ultra-thin articulamentum of red electroluminescence cell/the first of glass/metal film/the first/... the red electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) red electroluminescence cell/the (N-1) (N)
The ultra-thin articulamentum of glass/metal film/the first white electroluminescence unit/the first/... ultra-thin articulamentum/the of/the (N-1) white electroluminescence unit/the (N-1) (N) white electroluminescence unit/cathode layer
The ultra-thin articulamentum of yellow electroluminescence cell/the first of glass/metal film/the first/... the yellow electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) yellow electroluminescence cell/the (N-1) (N)
Red electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of glass/metal film/the first/ultra-thin articulamentum/the first green electroluminescent unit/ultra-thin articulamentum/the first
Yellow electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of glass/metal film/the first/ultra-thin articulamentum/the first
The ultra-thin articulamentum of blue coloured electroluminous unit/the first of glass/conducting polymer/the first/... the blue coloured electroluminous unit/cathode layer of ultra-thin articulamentum/the of/the (N-1) blue coloured electroluminous unit/the (N-1) (N)
The ultra-thin articulamentum of glass/conducting polymer/the first green electroluminescent unit/the first/... ultra-thin articulamentum/the of/the (N-1) green electroluminescent unit/the (N-1) (N) green electroluminescent unit/cathode layer
The ultra-thin articulamentum of red electroluminescence cell/the first of glass/conducting polymer/the first/... the red electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) red electroluminescence cell/the (N-1) (N)
The ultra-thin articulamentum of glass/conducting polymer/the first white electroluminescence unit/the first/... ultra-thin articulamentum/the of/the (N-1) white electroluminescence unit/the (N-1) (N) white electroluminescence unit/cathode layer
The ultra-thin articulamentum of yellow electroluminescence cell/the first of glass/conducting polymer/the first/... the yellow electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) yellow electroluminescence cell/the (N-1) (N)
Red electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of glass/conducting polymer/the first/ultra-thin articulamentum/the first green electroluminescent unit/ultra-thin articulamentum/the first
Yellow electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of glass/conducting polymer/the first/ultra-thin articulamentum/the first
The ultra-thin articulamentum of blue coloured electroluminous unit/the first of flexible polymer substrate/ITO/ first/... the blue coloured electroluminous unit/cathode layer of ultra-thin articulamentum/the of/the (N-1) blue coloured electroluminous unit/the (N-1) (N)
The ultra-thin articulamentum of flexible polymer substrate/ITO/ the first green electroluminescent unit/the first/... ultra-thin articulamentum/the of/the (N-1) green electroluminescent unit/the (N-1) (N) green electroluminescent unit/cathode layer
The ultra-thin articulamentum of red electroluminescence cell/the first of flexible polymer substrate/ITO/ first/... the red electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) red electroluminescence cell/the (N-1) (N)
The ultra-thin articulamentum of flexible polymer substrate/ITO/ the first white electroluminescence unit/the first/... ultra-thin articulamentum/the of/the (N-1) white electroluminescence unit/the (N-1) (N) white electroluminescence unit/cathode layer
The ultra-thin articulamentum of yellow electroluminescence cell/the first of flexible polymer substrate/ITO/ first/... the yellow electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) yellow electroluminescence cell/the (N-1) (N)
Red electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of flexible polymer substrate/ITO/ first/ultra-thin articulamentum/the first green electroluminescent unit/ultra-thin articulamentum/the first
Yellow electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of flexible polymer substrate/ITO/ first/ultra-thin articulamentum/the first
The ultra-thin articulamentum of blue coloured electroluminous unit/the first of flexible polymer substrate/conducting polymer/the first/... the blue coloured electroluminous unit/cathode layer of ultra-thin articulamentum/the of/the (N-1) blue coloured electroluminous unit/the (N-1) (N)
The ultra-thin articulamentum of flexible polymer substrate/conducting polymer/the first green electroluminescent unit/the first/... ultra-thin articulamentum/the of/the (N-1) green electroluminescent unit/the (N-1) (N) green electroluminescent unit/cathode layer
The ultra-thin articulamentum of red electroluminescence cell/the first of flexible polymer substrate/conducting polymer/the first/... the red electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) red electroluminescence cell/the (N-1) (N)
The ultra-thin articulamentum of flexible polymer substrate/conducting polymer/the first white electroluminescence unit/the first/... ultra-thin articulamentum/the of/the (N-1) white electroluminescence unit/the (N-1) (N) white electroluminescence unit/cathode layer
The ultra-thin articulamentum of yellow electroluminescence cell/the first of flexible polymer substrate/conducting polymer/the first/... the yellow electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) yellow electroluminescence cell/the (N-1) (N)
Red electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of flexible polymer substrate/conducting polymer/the first/ultra-thin articulamentum/the first green electroluminescent unit/ultra-thin articulamentum/the first
Yellow electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of flexible polymer substrate/conducting polymer/the first/ultra-thin articulamentum/the first
The ultra-thin articulamentum of blue coloured electroluminous unit/the first of flexible polymer substrate/metallic film/the first/... the blue coloured electroluminous unit/cathode layer of ultra-thin articulamentum/the of/the (N-1) blue coloured electroluminous unit/the (N-1) (N)
The ultra-thin articulamentum of flexible polymer substrate/metallic film/the first green electroluminescent unit/the first/... ultra-thin articulamentum/the of/the (N-1) green electroluminescent unit/the (N-1) (N) green electroluminescent unit/cathode layer
The ultra-thin articulamentum of red electroluminescence cell/the first of flexible polymer substrate/metallic film/the first/... the red electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) red electroluminescence cell/the (N-1) (N)
The ultra-thin articulamentum of flexible polymer substrate/metallic film/the first white electroluminescence unit/the first/... ultra-thin articulamentum/the of/the (N-1) white electroluminescence unit/the (N-1) (N) white electroluminescence unit/cathode layer
The ultra-thin articulamentum of yellow electroluminescence cell/the first of flexible polymer substrate/metallic film/the first/... the yellow electroluminescence cell/cathode layer of ultra-thin articulamentum/the of/the (N-1) yellow electroluminescence cell/the (N-1) (N)
Red electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of flexible polymer substrate/metallic film/the first/ultra-thin articulamentum/the first green electroluminescent unit/ultra-thin articulamentum/the first
Yellow electroluminescence cell/the cathode layer of the blue coloured electroluminous unit of flexible polymer substrate/metallic film/the first/ultra-thin articulamentum/the first
Below specific embodiments of the invention:
As shown in Figure 2, the ultra-thin articulamentum in the structure of device, comprises the organic superthin layer 401 as resilient coating, N-type ultra-thin metal layer 501, P type metallic compound superthin layer 601.
The organic superthin layer as resilient coating of device is Bphen, and N-type ultra-thin metal layer is Mg, and P type metallic compound superthin layer is V
2o
5.
The first electroluminescence cell 30 in the structure of device, comprises hole transmission layer 301, sends the doped layer 302 of blue light.
The second electroluminescence cell 31 in the structure of device, comprises hole transmission layer 311, sends the doped layer 312 of blue light, electron transfer layer 313.
The phosphor material that sends blue light of device is FIrPic, and phosphorescent light body material is CBP, hole mobile material NPB, electron transport material Alq
3, cathode layer Mg:Ag alloy.Whole device architecture is described as:
Glass/ITO/NPB(30nm)/MCP∶8wt％FIrPic(20nm)/Bphen(20nm)/Mg(0.1nm)/V
2O
5(20nm)/NPB(30nm)/MCP∶8wt％FIrPic(20nm)/Alq
3(20nm)/Mg:Ag(100nm)
Preparation method is as follows:
1. utilize washing agent, acetone soln, ethanolic solution and deionized water to carry out ultrasonic cleaning to transparent conduction base sheet ito glass, after cleaning, with drying nitrogen, dry up.Wherein the ITO film above glass substrate is as the anode layer of device, and the square resistance of ITO film is 10 Ω/, and thickness is 180nm;
2. dried substrate is moved into vacuum chamber, under the oxygen pressure ring border that is 20Pa, ito glass is carried out to low energy oxygen plasma preliminary treatment 10 minutes at air pressure, sputtering power is～20W, then in vacuum chamber cooling 15 minutes;
3. in vacuum environment, move down in organic chamber, be evacuated to 2 * 10
-4below Pa, then on above-mentioned ito thin film, evaporation one deck NPB is as hole transmission layer, and the evaporation speed of NPB material is 0.1nm/s, and thickness is 30nm;
4. keep above-mentioned vacuum chamber internal pressure constant, continue evaporation doped with the MCP of 8wt% blue phosphorescent material FIrPic on above-mentioned NPB hole transmission layer, the speed of evaporation is～0.1nm/s that total film thickness is 20nm;
5. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned blue light-emitting layer, continue evaporation one deck Bphen.As the organic superthin layer of intermediate connecting layer, the evaporation speed of Bphen is～0.1nm/s that thickness is 20nm;
6. under vacuum condition, substrate is transferred in wire chamber, be evacuated to 3 * 10
-3below Pa, continue evaporation one deck Mg as ultra-thin metal layer on above-mentioned organic superthin layer, the evaporation speed of Mg is～0.01nm/s that thickness is 0.1nm;
7. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned ultra-thin metal layer, continue evaporation one deck V
2o
5as metallic compound superthin layer, V
2o
5evaporation speed be～0.1nm/s that thickness is 20nm;
8. under vacuum condition, substrate is transferred in organic chamber, repeated 3.～technological process 4., and on above-mentioned blue light-emitting layer, continue evaporation one deck Alq
3as electron transfer layer, Alq
3evaporation speed be～0.1nm/s, thickness is 20nm, evaporation speed and thickness are monitored by near the film thickness gauge being arranged on substrate;
9. at air pressure, be 3 * 10
-3under the condition of Pa, carry out the preparation of metal electrode, evaporation speed is～1nm/s, Mg in alloy, and Ag ratio is～10: 1, thicknesses of layers is 100nm.Evaporation speed and thickness are monitored by near the film thickness gauge being arranged on substrate;
10. ready-made device is sent to glove box and encapsulates, glove box is 99.9% nitrogen atmosphere;
Current-voltage-the light characteristic of 11 test components, simultaneously the luminescent spectrum parameter of test component.
As shown in Figure 2, the ultra-thin articulamentum in the structure of device, comprises the organic superthin layer 401 as resilient coating, N-type ultra-thin metal layer 501, P type metallic compound superthin layer 601.
The organic superthin layer as resilient coating of device is CuPc, and N-type ultra-thin metal layer is Li, and P type metallic compound superthin layer is FeCl
3.
The first electroluminescence cell 30 in the structure of device, comprises hole transmission layer 301, sends the doped layer 302 of green glow.
The second electroluminescence cell 31 in the structure of device, comprises hole transmission layer 311, sends the doped layer 312 of green glow, electron transfer layer 313.
The phosphor material that sends green glow of device is Ir (ppy)
3, phosphorescent light body material is UGH2, hole mobile material NPB, electron transport material TPBi, cathode layer Mg:Ag alloy.Whole device architecture is described as:
Glass/ITO/NPB(30nm)/UGH2∶4wt％Ir(ppy)
3(20nm)/CuPc(10nm)/Li(5nm)/FeCl
3(10nm)/NPB(30nm)/UGH2∶4wt％Ir(ppy)
3(20nm)/TPBi(20nm)/Mg:Ag(100nm)
The preparation flow of device is similar to embodiment 1.
As shown in Figure 2, the ultra-thin articulamentum in the structure of device, comprises the organic superthin layer 401 as resilient coating, N-type ultra-thin metal layer 501, P type metallic compound superthin layer 601.
The organic superthin layer as resilient coating of device is BCP, and N-type ultra-thin metal layer is Ca, and P type metallic compound superthin layer is M
oo
3.
The first electroluminescence cell 30 in the structure of device, comprises hole transmission layer 301, sends the doped layer 302 of ruddiness.
The second electroluminescence cell 31 in the structure of device, comprises hole transmission layer 311, sends the doped layer 312 of ruddiness, electron transfer layer 313.
The phosphor material that sends ruddiness of device is Ir (piq)
3, phosphorescent light body material is MCP, hole mobile material NPB, electron transport material TPBi, cathode layer Mg:Ag alloy.Whole device architecture is described as:
Glass/ITO/NPB(30nm)/MCP∶1wt％Ir(piq)
3(20nm)/BCP(5nm)/Ca(10nm)/M
OO
3(5nm)/NPB(30nm)/MCP∶1wt％Ir(piq)
3(20nm)/TPBi(20nm)/Mg:Ag(100nm)
The preparation flow of device is similar to embodiment 1.
As shown in Figure 3, the ultra-thin articulamentum in the structure of device, comprises in the first intermediate connecting layer the organic superthin layer 401 as resilient coating, N-type ultra-thin metal layer 501, P type metallic compound superthin layer 601.
Ultra-thin articulamentum in the structure of device, comprises in the second intermediate connecting layer the organic superthin layer 411 as resilient coating, N-type ultra-thin metal layer 511, P type metallic compound superthin layer 611.
The organic superthin layer as resilient coating of device is TPBi, and N-type ultra-thin metal layer is Cs, and P type metallic compound superthin layer is WO
3.
The first electroluminescence cell 30 in the structure of device, comprises hole transmission layer 301, sends the doped layer 302 of blue light, electron transfer layer 303.
The second electroluminescence cell 31 in the structure of device, comprises hole transmission layer 311, sends the doped layer 312 of green glow, electron transfer layer 313.
The 3rd electroluminescence cell 32 in the structure of device, comprises hole transmission layer 321, sends the doped layer 322 of ruddiness, electron transfer layer 323.
The phosphor material that sends blue light of device is FIrPic, and the phosphor material that sends green glow is Ir (ppy)
3, the phosphor material that sends ruddiness is Ir (piq)
3, phosphorescent light body material is CBP, hole mobile material NPB, electron transport material BAlq, cathode layer Mg:Ag alloy.Whole device architecture is described as:
Glass/ITO/NPB(30nm)/CBP∶8wt％FIrPic(20nm)/BAlq(20nm)/TPBi(0.1nm)/Cs(20nm)/WO
3(0.1nm)/NPB(30nm)/CBP∶4wt％Ir(ppy)
3(20nm)/BAlq(20nm)/TPBi(0.1nm)/Cs(20nm)/WO
3(0.1nm)/NPB(30nm)/CBP∶1wt％Ir(piq)
3(20nm)/BAlq(20nm)/Mg:Ag(100nm)
Preparation method is as follows:
1. utilize washing agent, acetone soln, ethanolic solution and deionized water to carry out ultrasonic cleaning to transparent conduction base sheet ito glass, after cleaning, with drying nitrogen, dry up;
2. dried substrate is moved into vacuum chamber, under the oxygen pressure ring border that is 20Pa, ito glass is carried out to low energy oxygen plasma preliminary treatment 10 minutes at air pressure, sputtering power is～20W, then in vacuum chamber cooling 15 minutes;
3. in vacuum environment, move down in organic chamber, be evacuated to 2 * 10
-4below Pa, then on above-mentioned ito thin film, evaporation one deck NPB is as hole transmission layer, and the evaporation speed of NPB material is 0.1nm/s, and thickness is 30nm;
4. keep above-mentioned vacuum chamber internal pressure constant, continue evaporation doped with the CBP of 8wt% blue phosphorescent material FIrPic on above-mentioned NPB hole transmission layer, the speed of evaporation is～0.1nm/s that total film thickness is 20nm;
5. keep above-mentioned vacuum chamber internal pressure constant, above-mentioned mixing on blue light-emitting layer, continue evaporation one deck BAlq, as electron transfer layer, evaporation speed is～0.1nm/s that thickness is 20nm;
6. keep above-mentioned vacuum chamber internal pressure constant, continue evaporation one deck TPBi on above-mentioned electron transfer layer, as the organic superthin layer of the first intermediate connecting layer, evaporation speed is～0.01nm/s that thickness is 0.1nm;
7. under vacuum condition, substrate is transferred in wire chamber, be evacuated to 3 * 10
-3below Pa, continue evaporation one deck Cs as ultra-thin metal layer on above-mentioned organic superthin layer, evaporation speed is～0.1nm/s that thickness is 20nm;
8. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned ultra-thin metal layer, continue evaporation one deck WO
3as metallic compound superthin layer, evaporation speed is～0.01nm/s that thickness is 0.1nm;
9. under vacuum condition, substrate is transferred in organic chamber, repeated technological process 3., and on above-mentioned NPB hole transmission layer, continue evaporation doped with 4wt% green phosphorescent material Ir (ppy)
3cBP, the speed of evaporation is～0.1nm/s that total film thickness is 20nm;
10. keep above-mentioned vacuum chamber internal pressure constant, repeat successively 5.～8. with technological process 3., and on above-mentioned NPB hole transmission layer, continue evaporation doped with 1wt% red phosphorescence material Ir (piq)
3cBP, the speed of evaporation is～0.1nm/s that total film thickness is 20nm;
11 keep above-mentioned vacuum chamber internal pressure constant, repeat technological process 3..Under vacuum condition, substrate is transferred in wire chamber, be evacuated to 3 * 10
-3below Pa, carry out the preparation of metal electrode, evaporation speed is～1nm/s, Mg in alloy, and Ag ratio is～10: 1, thicknesses of layers is 100nm.Evaporation speed and thickness are monitored by near the film thickness gauge being arranged on substrate.
12 are sent to glove box by ready-made device encapsulates, and glove box is 99.9% nitrogen atmosphere.
Current-voltage-the light characteristic of 13 test components, simultaneously the luminescent spectrum parameter of test component.
As shown in Figure 4, the ultra-thin articulamentum in the structure of device, comprises the organic superthin layer 401 as resilient coating, N-type ultra-thin metal layer 501, P type metallic compound superthin layer 601.
The organic superthin layer as resilient coating of device is Alq
3, N-type ultra-thin metal layer is Al, P type metallic compound superthin layer is SbCl
5.
The first electroluminescence cell 30 in the structure of device, comprises hole transmission layer 301, sends the doped layer 302 of gold-tinted, electron transfer layer 303.
The second electroluminescence cell 31 in the structure of device, comprises hole transmission layer 311, sends the doped layer 312 of gold-tinted, electron transfer layer 313.
The phosphor material that sends green glow of device is Ir (PPy)
3, the fluorescent material that sends ruddiness is DCJTB, phosphorescent light body material is CBP, hole mobile material NPB, electron transport material PBD, cathode layer Mg:Ag alloy.Whole device architecture is described as:
Glass/PEDOT:PSS(100nm)/NPB(30nm)/CBP∶4％wt?Ir(ppy)
3∶2％wtDCJTB(20nm)/PBD(20nm)/Alq
3(0.1nm)/Al(10nm)/SbCl
5(5nm)/NPB(30nm)/CBP∶4％wt?Ir(ppy)
3∶2％wt?DCJTB(20nm)/PBD(20nm)/Mg:Ag(100nm)
Preparation method is as follows:
1. utilize washing agent, acetone soln, ethanolic solution and deionized water to carry out ultrasonic cleaning to glass substrate, after cleaning, with drying nitrogen, dry up.
2. the glass substrate after processing is placed in to the spin coating of carrying out conducting polymer PEDOT:PSS on photoresist spinner, by controlling different solution concentration ratios, photoresist spinner rotating speed and time, control the thickness of spin-coating film, thickness is 100nm, then substrate is placed in vacuum drying chamber and toasts 30min, temperature setting is set to 100 ℃;
3. in vacuum environment, move down in organic chamber, be evacuated to 2 * 10
-4below Pa, then on PEDOT:PSS conducting polymer film, evaporation one deck NPB is as hole transmission layer, and evaporation speed is 0.1nm/s, and thickness is 30nm;
4. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned NPB hole transmission layer, continue evaporation doped with 4wt% green phosphorescent material Ir (ppy)
3with the CBP of 2wt% red fluorescence material DCJTB, the speed of evaporation is～0.1nm/s that thickness is 20nm;
5. keep above-mentioned vacuum chamber internal pressure constant, continue evaporation one deck PBD as electron transfer layer on above-mentioned luminescent layer, evaporation speed is 0.1nm/s, and thickness is 20nm;
6. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned blue light-emitting layer, continue evaporation one deck Alq
3.As the organic superthin layer of intermediate connecting layer, evaporation speed is～0.01nm/s that thickness is 0.1nm;
7. under vacuum condition, substrate is transferred in wire chamber, be evacuated to 3 * 10
-3below Pa, continue evaporation one deck Al as ultra-thin metal layer on above-mentioned organic superthin layer, the evaporation speed of Al is～0.1nm/s that thickness is 10nm;
8. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned ultra-thin metal layer, continue evaporation one deck SbCl
5as metallic compound superthin layer, SbCl
5evaporation speed be～0.1nm/s that thickness is 5nm;
9. in vacuum environment, move down in organic chamber, be evacuated to 2 * 10
-4below Pa, then at SbCl
5upper evaporation one deck NPB is as hole transmission layer, and the evaporation speed of NPB material is 0.1nm/s, and thickness is 30nm;
10. keep above-mentioned vacuum chamber internal pressure constant, repeat 4.～technological process 5., evaporation speed and thickness are monitored by near the film thickness gauge being arranged on substrate;
11 is 3 * 10 at air pressure
-3under the condition of Pa, carry out the preparation of metal electrode, evaporation speed is～1nm/s, Mg in alloy, and Ag ratio is～10: 1, thicknesses of layers is 100nm.Evaporation speed and thickness are monitored by near the film thickness gauge being arranged on substrate.
12 are sent to glove box by ready-made device encapsulates, and glove box is 99.9% nitrogen atmosphere.
Current-voltage-the light characteristic of 13 test components, simultaneously the luminescent spectrum parameter of test component.
As shown in Figure 4, the ultra-thin articulamentum in the structure of device, comprises the organic superthin layer 401 as resilient coating, N-type ultra-thin metal layer 501, P type metallic compound superthin layer 601.
The organic superthin layer as resilient coating of device is PyPySPyPy, and N-type ultra-thin metal layer is Yb, and P type metallic compound superthin layer is AlF
3.
Electroluminescence cell in the structure of device, comprises hole transmission layer 301, sends the doped layer 302 of blue light.
Electroluminescence cell in the structure of device, comprises hole transmission layer 311, sends the doped layer 312 of ruddiness, electron transfer layer 313.
The phosphor material that sends blue light of device is FIrPic, and the phosphor material that sends ruddiness is Ir (piq)
3, phosphorescent light body material is CBP, hole mobile material NPB, electron transport material TPBi, cathode layer Mg:Ag alloy.Whole device architecture is described as:
Flexible polymer substrate/ITO/NPB (30nm)/CBP:6wt%FIrpic (20nm)/TPBi (20nm)/PyPySPyPy (5nm)/Yb (5nm)/AlF
3(0.1nm)/NPB (30nm)/CBP: 1wt% (t-bt)
2ir (acac) (20nm)/TPBi (20nm)/Mg:Ag (100nm)
The preparation flow of device is similar to embodiment 5.
As shown in Figure 2, the ultra-thin articulamentum in the structure of device, comprises the organic superthin layer 401 as resilient coating, N-type ultra-thin metal layer 501, P type metallic compound superthin layer 601.
The organic superthin layer as resilient coating of device is Bphen, and N-type ultra-thin metal layer is Mg, and P type metallic compound superthin layer is V
2o
5.
The first electroluminescence cell 30 in the structure of device, comprises hole transmission layer 301, sends the doped layer 302 of blue light.
The second electroluminescence cell 31 in the structure of device, comprises hole transmission layer 311, sends the doped layer 312 of blue light, electron transfer layer 313.
The phosphor material that sends blue light of device is FIrPic, and phosphorescent light body material is CBP, hole mobile material NPB, electron transport material Alq
3, cathode layer Mg:Ag alloy.Whole device architecture is described as: glass/metal film/NPB/CBP: 6wt%FIrPic (20nm)/Alq
3(20nm)/Bphen (20nm)/Mg (0.1nm)/V
2o
5(20nm)/NPB (30nm)/CBP: 6wt%FIrPic (20nm)/Alq
3(20nm)/Mg:Ag (100nm)
The preparation flow of device is similar to embodiment 5.
As shown in Figure 3, the ultra-thin articulamentum in the structure of device, comprises the organic superthin layer 401 as resilient coating, N-type ultra-thin metal layer 501, P type metallic compound superthin layer 601.
Organic superthin layer as resilient coating in the first intermediate connecting layer of device is Liq, and N-type ultra-thin metal layer is Cs, and P type metallic compound superthin layer is Cs
2cO
3.
Organic superthin layer as resilient coating in the second intermediate connecting layer of device is NBPhen, and N-type ultra-thin metal layer is Rb, and P type metallic compound superthin layer is ITO.
The first electroluminescence cell 30 in the structure of device, comprises hole transmission layer 301, sends the doped layer 302 of gold-tinted, electron transfer layer 303.
The second electroluminescence cell 31 in the structure of device, comprises hole transmission layer 311, sends the doped layer 312 of gold-tinted, electron transfer layer 313.
The 3rd electroluminescence cell 32 in the structure of device, comprises hole transmission layer 321, sends the doped layer 322 of gold-tinted, electron transfer layer 323.
In device, hole mobile material is NPB, and the phosphor material that the first electroluminescence cell sends gold-tinted is (t-bt)
2ir (acac), the fluorescent material that sends gold-tinted in the second electroluminescence cell is DCM, fluorescence material of main part is Alq
3, the phosphor material that the 3rd electroluminescence cell sends green glow is Ir (ppy)
3, the fluorescent material that sends ruddiness is DCJTB, material of main part CBP, electron transport material Bepq2, cathode layer Mg:Ag alloy.Whole device architecture is described as:
Flexible polymer substrate/PEDOT:PSS (100nm)/NPB (30nm)/CBP: 3wt% (t-bt)
2ir (acac) (20nm)/Bepq2 (20nm)/Liq (8nm)/Cs (1nm)/Cs
2cO
3(12nm)/NPB (30nm)/Alq
3: 1wt%DCM (20nm)/Bepq2 (20nm)/NBPhen (15nm)/Rb (3nm)/Cs
2cO
3(6nm)/NPB (30nm)/CBP: 4wt%Ir (ppy)
3: 2wt%DCJTB (20nm)/Bepq2 (20nm)/Mg:Ag (100nm)
Preparation method is as follows:
1. utilize washing agent, acetone soln, ethanolic solution and deionized water to carry out ultrasonic cleaning to flexible polymer substrate, after cleaning, with drying nitrogen, dry up;
2. the flexible polymer substrate after processing is placed in to the spin coating of carrying out conducting polymer PEDOT:PSS on photoresist spinner, by controlling different solution concentration ratios, photoresist spinner rotating speed and time, control the thickness of spin-coating film, thickness is 100nm, then substrate is placed in vacuum drying chamber and toasts 30min, temperature setting is set to 80 ℃;
3. in vacuum environment, move down in organic chamber, be evacuated to 2 * 10
-4below Pa, then on PEDOT:PSS conducting polymer film, evaporation one deck NPB is as hole transmission layer, and evaporation speed is 0.1nm/s, and thickness is 30nm;
4. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned NPB hole transmission layer, continue evaporation doped with 3wt% yellow phosphorescence material (t-bt)
2the CBP of Ir (acac), the speed of evaporation is～0.1nm/s that total film thickness is 20nm;
5. keep above-mentioned vacuum chamber internal pressure constant, above-mentioned mixing on blue light-emitting layer, continue evaporation one deck Bepq2, as electron transfer layer, evaporation speed is～0.1nm/s that thickness is 20nm;
6. keep above-mentioned vacuum chamber internal pressure constant, continue evaporation one deck Liq on above-mentioned electron transfer layer, as the organic superthin layer of the first intermediate connecting layer, evaporation speed is～0.01nm/s that thickness is 8nm;
7. under vacuum condition, substrate is transferred in wire chamber, be evacuated to 3 * 10
-3below Pa, continue evaporation one deck Cs as the ultra-thin metal layer of the first intermediate connecting layer on above-mentioned organic superthin layer, evaporation speed is～0.01nm/s that thickness is 1nm;
8. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned ultra-thin metal layer, continue evaporation one deck Cs
2cO
3as the metallic compound superthin layer of the first intermediate connecting layer, evaporation speed is～0.01nm/s that thickness is 12nm;
9. under vacuum condition, substrate is transferred in organic chamber, be evacuated to 2 * 10
-4below Pa, evaporation one deck NPB is as hole transmission layer, and evaporation speed is 0.1nm/s, and thickness is 30nm;
10. keep above-mentioned vacuum chamber internal pressure constant, on above-mentioned NPB hole transmission layer, continue evaporation doped with the Alq of 1wt% fluorescent orange material DCM
3, the speed of evaporation is～0.1nm/s that total film thickness is 20nm;
11 keep above-mentioned vacuum chamber internal pressure constant, repeat technological process 5., continue evaporation one deck NBPhen as the organic superthin layer of the second intermediate connecting layer on above-mentioned Bepq2 electron transfer layer, and evaporation speed is～0.01nm/s, thickness 15nm;
Under 12 vacuum conditions, substrate is transferred in wire chamber, be evacuated to 3 * 10
-3below Pa, continue evaporation one deck Rb as the ultra-thin metal layer of the second intermediate connecting layer on above-mentioned organic superthin layer, evaporation speed is～0.01nm/s that thickness is 3nm;
13 keep above-mentioned vacuum chamber internal pressure constant, continue evaporation one deck Cs on above-mentioned ultra-thin metal layer
2cO
3as the metallic compound superthin layer of the second intermediate connecting layer, evaporation speed is～0.01nm/s that thickness is 6nm;
Under 14 vacuum conditions, substrate is transferred in organic chamber, be evacuated to 2 * 10
-4below Pa, repeat technological process 9., on above-mentioned NPB hole transmission layer, continue evaporation doped with 4wt% green phosphorescent material Ir (ppy)
3with the CBP of 2wt% red fluorescence material DCJTB, the speed of evaporation is～0.1nm/s that thickness is 20nm;
14 keep above-mentioned vacuum chamber internal pressure constant, repeat technological process 5., under vacuum condition, substrate is transferred in wire chamber, and at air pressure, be then 3 * 10
-3under the condition of Pa, carry out the preparation of metal electrode, evaporation speed is～1nm/s, Mg in alloy, and Ag ratio is～10: 1, thicknesses of layers is 100nm.Evaporation speed and thickness are monitored by near the film thickness gauge being arranged on substrate.
15 are sent to glove box by ready-made device encapsulates, and glove box is 99.9% nitrogen atmosphere.
Current-voltage-the light characteristic of 16 test components, simultaneously the luminescent spectrum parameter of test component.
Table 1 is organic electroluminescence device in the embodiment of the present invention 1 and the organic electroluminescence device performance parameter contrast with doping type intermediate connecting layer
Claims (9)
1. an organic electroluminescence device, comprise substrate, anode layer, cathode layer and be arranged on anode layer and cathode layer between at least two electroluminescence cells and at least one intermediate connecting layer, wherein a kind of electrode is positioned at transparent substrates surface, it is characterized in that, described intermediate connecting layer is between two electroluminescence cells of adjacency, intermediate connecting layer comprises organic superthin layer, ultra-thin metal layer and metallic compound superthin layer, described ultra-thin metal layer is between organic superthin layer and metallic compound superthin layer, wherein organic superthin layer is resilient coating, ultra-thin metal layer is N-type layer, metallic compound superthin layer is P type layer, in intermediate connecting layer, the thickness of organic superthin layer is that 0.1nm is to 20nm, in described intermediate connecting layer, the thickness of ultra-thin metal layer is that 0.1nm is to 10nm, in described intermediate connecting layer, the thickness of metallic compound superthin layer is that 0.1nm is to 20nm.
2. organic electroluminescence device according to claim 1, is characterized in that, described electroluminescence cell comprises one or more in luminescent layer, hole transmission layer, electron transfer layer, hole injection layer and electron injecting layer.
3. organic electroluminescence device according to claim 1, is characterized in that, described organic electroluminescence device has two electroluminescence cells at least, and each electroluminescence cell has identical or different layer structures.
4. organic electroluminescence device according to claim 1, is characterized in that, described intermediate connecting layer has one deck at least, and each articulamentum unit of many intermediate connecting layers structure has identical or different layer structures.
5. organic electroluminescence device according to claim 1, is characterized in that, described organic superthin layer material comprises Liq, Alq
3, PBD, Bphen, BCP, TPBi, BAlq, Bpy-OXD, BP-OXD-Bpy, TAZ, NTAZ, NBphen, Bpy-FOXD, XOD-7,3TPYMB, 2-NPIP, HNBphen, POPy2, BP4mPy, TmPyPB, BTB, BmPyPhB, Bepq2, DPPS, CuPc or PyPySPyPy.
6. organic electroluminescence device according to claim 1, is characterized in that, described ultra-thin metal layer material comprises Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, La, Ce, La, Nd, Sm, Eu, Al, Tb, Dy or Yb.
7. according to the organic electroluminescence device under claim 1, it is characterized in that, described metallic compound Ultrathin Layer Materials comprises ITO, V
2o
5, WO
3, MOO
3, Cs
2cO
3, MnO, NiMoO
4, CuMoO
4, FeCl
3, SbCl
5, Al
4c
3, LiF, FeF
3, AlF
3, CuS, ZnS, B
2s
3, GaAs, GaP, InP, CdSe, ZnTe, CdTe or SnTe.
8. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
1. clean transparent substrates dry;
2. in transparent substrates, prepare conductive film as electrode;
3. the transparent substrates for preparing electrode layer is moved into vacuum chamber, under oxygen pressure ring border, carry out the preliminary treatment of low energy oxygen plasma;
4. by the substrate after processing in the vaporization chamber of high vacuum, start to carry out the preparation of film, according to device architecture, prepare successively the first electroluminescence cell, the first intermediate connecting layer, the second electroluminescence cell, the second intermediate connecting layer ... (N-1) electroluminescence cell, (N-1) intermediate connecting layer, N electroluminescence cell, wherein N > 1, and N is integer, intermediate connecting layer comprises organic superthin layer, ultra-thin metal layer and metallic compound superthin layer, in intermediate connecting layer, the thickness of organic superthin layer is that 0.1nm is to 20nm, in described intermediate connecting layer, the thickness of ultra-thin metal layer is that 0.1nm is to 10nm, in described intermediate connecting layer, the thickness of metallic compound superthin layer is that 0.1nm is to 20nm, described ultra-thin metal layer is between organic superthin layer and metallic compound superthin layer, wherein organic superthin layer is resilient coating, ultra-thin metal layer is N-type layer, metallic compound superthin layer is P type layer,
5. device is sent to the preparation of carrying out electrode in vacuum evaporation chamber;
6. the device of preparation is sent to glove box and encapsulates, glove box is atmosphere of inert gases;
7. the photoelectric properties parameter of test component.
9. the preparation method of organic electroluminescence device according to claim 8, it is characterized in that, described intermediate connecting layer forms by one or several modes in vacuum evaporation, ion cluster bundle deposition, ion plating, DC sputtering deposition, RF sputter coating, ion beam sputtering deposition, ion beam assisted depositing, plasma reinforced chemical vapour deposition, high density inductive coupling plasma source chemical vapor deposition, catalyst chemical vapour deposition (CVD).
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| CN103972402A (en) * | 2013-01-31 | 2014-08-06 | 海洋王照明科技股份有限公司 | Organic light-emitting device and production method thereof |
| CN104051661A (en) * | 2013-03-12 | 2014-09-17 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and manufacturing method thereof |
| CN104078617A (en) * | 2013-03-29 | 2014-10-01 | 海洋王照明科技股份有限公司 | Organic light-emitting diode device and manufacturing method thereof |
| CN104183740A (en) * | 2013-05-24 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104183778A (en) * | 2013-05-24 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104253243A (en) * | 2013-06-26 | 2014-12-31 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104253231A (en) * | 2013-06-26 | 2014-12-31 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN104409648B (en) * | 2014-11-14 | 2017-02-22 | 深圳市华星光电技术有限公司 | Tandem type OLED (organic light emitting diode) and displayer |
| CN112467049A (en) * | 2020-11-18 | 2021-03-09 | 安徽熙泰智能科技有限公司 | Structure of OLED device |
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| CN101006594A (en) * | 2004-08-20 | 2007-07-25 | 伊斯曼柯达公司 | White OLED having multiple white electroluminescent units |
| CN101055923A (en) * | 2006-04-13 | 2007-10-17 | Lg电子株式会社 | Organic electroluminescence device and method for fabricating the same |
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| KR20080083449A (en) * | 2007-03-12 | 2008-09-18 | 삼성전자주식회사 | White organic light emitting device |
| US7816859B2 (en) * | 2007-04-30 | 2010-10-19 | Global Oled Technology Llc | White light tandem OLED |
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| CN101006594A (en) * | 2004-08-20 | 2007-07-25 | 伊斯曼柯达公司 | White OLED having multiple white electroluminescent units |
| CN101055923A (en) * | 2006-04-13 | 2007-10-17 | Lg电子株式会社 | Organic electroluminescence device and method for fabricating the same |
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